US 8,183,646 B2Grant

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Issue Date:2012-05-22

•18 Claims

•8 Drawing Sheets

Abstract

A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

Metadata

Assignee

Intel Corporation

Inventors

Robert S. Chau
Suman Datta
Jack Kavalieros
Justin K. Brask
Mark L. Doczy
Matthew Metz

Application Information

Application Number:US 13/021,640

Filing Date:2011-02-04

Priority Date:2005-02-23

Art Unit:2894

Classifications

IPC:

H01L27/088

Patent Drawings (8 sheets)

Description

[0001] This is divisional of pending U.S. patent application Ser. No. 12/850,582 filed on Aug. 4, 2010 now U.S. Pat. No. 7,893,506, which is a continuation of U.S. patent application Ser. No. 12/343,400 filed on Dec. 23, 2008, now issued as U.S. Pat. No. 7,825,481, which is a divisional of U.S. patent application Ser. No. 11/064,996 filed on Feb. 23, 2005, now issued as U.S. Pat. No. 7,518,196.

Background of the Invention

[0002] 1. Field of the Invention

[0003] The present invention relates to the field of field effect transistors and more particularly to a field effect transistor having a pair of source/drain regions formed from a narrow bandgap semiconductor film and its method of fabrication.

[0004] 2. Discussion of Related Art

[0005] Integrated circuits, such as microprocessors, digital signal processors, and memory devices are made up of literally millions of transistors coupled together into functional circuits. An example of a conventional metal oxide semiconductor field effect transistor (MOSFET) 100 is illustrated in FIG. 1. Transistor 100 includes a gate electrode 102 formed on a gate dielectric layer 104 which in turn is formed on a monocrystalline silicon substrate. A pair of sidewall spacers 108 are then formed along laterally opposite sidewalls of the gate electrode 102. A pair of source/drain regions 110 are then formed along opposite sides of the gate electrode 102 as shown in FIG. 1. The source and drain regions comprise heavily doped portions of the silicon substrate 106. Typically, a silicide layer 112, such as titanium silicide or nickel silicide, is used to couple contacts 120 formed in a interlayer dielectric 140 to the source and drain regions 110. Silicide regions 112 are generally formed by alloying a metal, such as titanium, nickel or cobalt with the silicon substrate 106 to form the metal silicide. Additionally, contacts 120 are generally formed from a relatively high resistance film such as tungsten which can be conformally deposited so that it fills contact opening formed in the into dielectric layer 140.

[0006] The dimension of transistor 100 are continually being scaled down in order to increase packing density and thereby increase the computational power of the fabricated integrated circuits. Unfortunately, as transistor 100 is continually scaled down, the external resistance of the device (Rext) is increased degrading device performance, such as its drive current. Presently, the problem of increased Rext is solved by high active doping of the source and drain region and fully siliciding the source and drain regions. High active doping of the source and drain regions can decrease the electron mobility in the source and drain regions. Fully siliciding the source and drain regions results in a schkotty barrier transistors resulting in ambipolar conduction. Additionally, formation of silicide films by alloying a metal and the semiconductor substrate together can increase the thermal budget of the device which can decrease device performance.

Brief Description of the Drawings

[0007] FIG. 1 is an illustration of a cross-sectional view of a standard MOS nonplanar field effect transistor.

[0008] FIGS. 2A and 2B are illustrations of cross-sectional views of nonplanar field effect transistors having a pair of source/drain regions formed from a narrow bandgap semiconductor in accordance with embodiments of the present invention.

[0009] FIGS. 3A-3F illustrate a method of fabricating a field effect transistor having a pair of source/drain regions comprising a narrow bandgap semiconductor in accordance with embodiments of the present invention.

[0010] FIG. 4 is a plot showing the electron mobility verses sheet carrier concentration for indium antimonide (InSb).

[0011] FIG. 5 is an illustration of a nonplanar transistor having a pair of source/drains formed from a narrow bandgap semiconductor.

[0012] FIG. 6 illustrates a system in accordance with one embodiment.

Detailed Description of the Present Invention

[0013] The present invention is a field effect transistor having a pair of source/drain regions formed from a narrow bandgap semiconductor film. In the following description numerous specific details are set forth in order to provide a thorough understanding of the present invention. In other instances, well known semiconductor processing techniques and equipment have not been forth in particular detail in order to not unnecessarily obscure the present invention.

[0014] Embodiments of the present invention include a field effect transistor having a pair of source/drain regions formed from a narrow energy bandgap (e.g., less than 0.75 eV) semiconductor film. In an embodiment of the present invention, the silicon substrate adjacent to the gate electrode is etched out and refilled with a selective epitaxial regrowth of a narrow bandgap high mobility compound semiconductor material. By forming the source and drain regions from a narrow bandgap high conductivity semiconductor, such as indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP), a significant reduction in the parasitic series resistance in extremely scaled sub-50 nanometer MOSFETs can be obtained. Additionally, in embodiments of the present invention, non-alloyed ohmic contacts are used to make contact to the narrow bandgap semiconductor film which results in a very low thermal budget in the front end process thereby improving device performance. Additionally, in embodiments of the present invention, the transistor is formed in a thin silicon layer of silicon-on-insulator (SOI) substrate in order to decrease or remove the possibility of increased junction leakage current. Source and drain regions formed from a narrow bandgap semiconductor material can be used to decrease the parasitic resistance in both planar and nonplanar devices.

[0015] FIG. 2A is an example of a metal oxide semiconductor field effect transistor (MOSFET) 200 in accordance with an embodiment of the present invention. Transistor 200 has a gate electrode 202 formed on a gate dielectric layer 204 formed on a silicon layer 206. A pair of sidewall spacers 208 are formed along laterally opposite sidewalls of gate electrode 202 as shown in FIG. 2A. Transistor 200 has a pair of source/drain regions 210 formed on opposite sides of gate electrode 202. A channel region 206 is located in the silicon layer between the source and drain regions 210.

[0016] In an embodiment of the present invention, the source and drain regions 210, or a portion of the source and drain regions 210, are formed from a low or narrow bandgap energy semiconductor film 212. In an embodiment of the present invention the narrow bandgap semiconductor is an epitaxial or single crystalline film. In an embodiment of the present invention, the source and drain regions 210 are formed from a narrow bandgap semiconductor 212 having an energy bandgap of less than 0.75 eV and in embodiments less than 0.36 eV. In an embodiment of the present invention, the narrow bandgap semiconductor film 212 is a compound semiconductor film having a bandgap between 0.75 eV and 0.18 eV. In an embodiment of the present invention, the source and drain regions 210 include a epitaxial narrow bandgap, high mobility compound semiconductor material 212, such as but not limited to indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP). In an embodiment of the present invention, the source and drain region 210 are formed from a compound semiconductor 212 having bulk mobility between 10,000-80,000 (cm²V⁻¹s⁻¹). An advantage of using a narrow bandgap semiconductor in the source and drain regions, is that they have low sheet resistivities due to their inherently high mobilities and superior electron transport properties as compared to silicon. FIG. 4 is a plot which illustrates the electron mobility in InSb vs. the carrier concentration. The higher mobility results in a low sheet resistance (R_sd). Another advantage of using a narrow bandgap semiconductor 212 with very high mobility is that it provides a lower band offset, φ_b, and a lower effective electron mass (m*) which results in a lowering of the contact resistivity, ρc, which results in a lower contact resistance, R_c, compared to conventional n+ implanted silicon source and drain regions with nickel silicide contacts.

[0017] In an embodiment of the present invention, transistor 200 has raised source and drain regions. Raised source and drain regions are formed by having the narrow bandgap semiconductor film 212 extend above the top surface 201 of the silicon film upon which the gate dielectric layer 204 is formed. In an embodiment of the present invention, the narrow bandgap semiconductor film 212 of the source and drain regions 210 extends at least 200 Å above the silicon surface 201 and generally between 200-300 Å above the surface 201. The dielectric sidewall spacers 208 isolate the raised portion of the source and drain regions 210 from the gate electrode 202. As such, the spacers 208 are formed to a width sufficient enough to isolate the narrow bandgap semiconductor films from the gate electrode 202 as well as wide enough to reduce the parasitic Miller capacitance which can develop between the raised source and drain regions and the gate electrode 202. Additionally, spacers 208 should not be formed too wide so that current traversal path is increased and packing density decreased. In an embodiment of the present invention, the sidewall spacers are formed from an insulating film, such as silicon nitride or silicon oxide, having a width of between 100-500 Å.

[0018] In an embodiment of the present invention, as illustrated in FIG. 2A, the narrow bandgap semiconductor 212 laterally extends completely beneath spacer 208 and slightly extends beneath or undercuts the gate dielectric/gate electrode 204/202. In an embodiment of the present invention, the narrow bandgap semiconductor 212 extends beneath the outside edges of the gate electrode 210 by approximately 50-70 Å.

[0019] Additionally, when forming an n type field effect transistor (FET) where the majority carriers are electrons, the narrow bandgap semiconductor is doped to an n type conductivity and when forming a p type field effect transistor where the majority carriers are holes, the narrow bandgap semiconductor 212 is doped to a p type conductivity. A narrow bandgap semiconductor 212, such as indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP), can be doped to an n type conductivity with, for example, tellurium (Te), silicon (Si) and sulfur (S) and doped to a p type conductivity with, for example, carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr).

[0020] In an embodiment of the present invention, the source and drain regions can include a pair of source/drain extensions or tip regions 214 as illustrated in FIG. 2B. Source/drain extensions are a portion of the source/drain regions 210 and are formed by doping the silicon layer and extend beneath the gate electrode and spacers. The extensions 214 are doped to a p type conductivity for a p type device and to an n type conductivity for a n type device. If the source/drain extensions 214 are provided, then the narrow bandgap semiconductor portion 212 of the source and drain regions 210, need not extend beneath the outside edges of the gate electrode because the laterally tip regions 214 extend the source and drain regions 210 beneath the spacers 208 and gate electrode 202 as shown in FIG. 2B. In an embodiment of the present invention, the narrow bandgap semiconductor 212 extends only slightly beneath the sidewall spacers 208 where it contacts the source/drain extensions 214. In yet another embodiment of the present invention, the narrow bandgap semiconductor 212 contacts the source/drain extensions 214 in alignment with the outside edges of the sidewall spacers 208.

[0021] In an embodiment of the present invention, transistor 200 is formed in a silicon layer which is part of a monocrystalline silicon substrate. When transistor 200 is formed in a monocrystalline silicon substrate, the channel region 206 is formed in a doped region of the monocrystalline silicon substrate and the narrow bandgap semiconductor film 210 is formed in recesses formed in the monocrystalline silicon substrate. When a transistor is formed in a monocrystalline silicon substrate, the transistor is sometimes referred to as “a bulk” transistor. Unfortunately, forming the source and drain regions 210 from a low bandgap semiconductor, a bulk device can cause an increase the junction leakage current. Accordingly, in an embodiment of the present invention, in order to reduce the junction leakage current, transistor 200 is formed in a thin epitaxial silicon film 220 of a silicon-on-insulator (SOI) substrate 224. A silicon-on-insulator (SOI) substrate 224 includes a thin silicon film 220 formed on a buried oxide layer 222 which in turn is formed on a monocrystalline silicon substrate 226. In an embodiment of the present invention, the narrow bandgap semiconductor portions 212 of the source and drain regions 210 are formed in recesses formed in the epitaxial silicon film 220 of the SOI substrate 226. In an embodiment of the present invention, a small portion 230 of the epitaxial silicon film 220 remains between the buried oxide layer and the bottom of the narrow bandgap semiconductor 212 so that an epitaxial narrow bandgap semiconductor film can be selectively grown on the epitaxial silicon film 220. In an embodiment of the present invention, the portion 230 of the epitaxial silicon film remaining between the buried oxide layer and the narrow bandgap semiconductor film 212 is between 10-100 Å thick.

[0022] Additionally, in an embodiment of the present invention, an interlayer dielectric 240, such as but not limited to a silicon dioxide film or a low k dielectric, such as a fluorine doped silicon dioxide (SiOF), a carbon doped oxide (CDO) or a zeolite dielectric, is formed over and around transistor 200 as shown in FIGS. 2A and 2B. The interlayer dielectric layer 240 isolates transistor 200 from the upper levels of metallization 260 used to interconnect the various transistor 200 formed on substrate 224 into function circuits, such as microprocessors, digital signal processors and memory devices. Metal contacts 250 are formed through the interlayer dielectric and directly contact the narrow bandgap semiconductor material 212 of the source and drain regions 210 to provide electrical connection between the first level of metallization and the source and drain regions 210 as illustrated in FIG. 2A. In an embodiment of the present invention, the metal contacts 250 form a low resistance non-alloyed ohmic contact with a narrow bandgap semiconductor 210. In an embodiment of the present invention, metal contacts 250 comprise a lower titanium adhesion layer 252 and a bulk gold (Au) layer 254. In an embodiment of the present invention, there is no silicide or alloyed films formed between the narrow bandgap semiconductor film 210 and the contact 250. The use of a non-alloyed metal contact 250 results in a very low thermal budget in the front end of the process flow and its associated benefits.

[0023] It is to be appreciated that the present invention is not limited to planar devices and can be used in nonplanar devices, such as tri-gate transistors and dual gate transistors. FIG. 5 illustrates a tri-gate transistor 500 having source and drain regions comprising a narrow bandgap semiconductor film 212. In a nonplanar device, instead of forming the gate dielectric layer 204 on a single surface of a silicon film, the silicon film is first patterned into a silicon body having a top surface opposite a bottom surface formed on buried oxide and a pair of laterally sidewalls as shown in FIG. 5. The gate dielectric layer 204 is then formed on the top surface and sidewalls of the silicon body as shown in FIG. 5. A gate electrode is then formed on the gate dielectric layer on the top surface of a silicon body and directly adjacent to the gate dielectric layer 204 on the sidewalls of the semiconductor body so that the gate electrode 202 surrounds the channel region of the silicon body on three sides. In a FINFET or dual gate device, the gate electrode 202 can be isolated from the silicon body by a thick dielectric layer (not shown) so that the gate only controls two sides of the body. The portion of the silicon body on opposite sides of the gate electrode used to form the source and drain regions can then be partially etched away so that the narrow bandgap semiconductor film 212 can be regrown to form the source and drain regions 210.

[0024] FIGS. 3A-3F illustrate a method of forming a field effect transistor having source and drain regions formed from a narrow bandgap semiconductor film in accordance with embodiments of the present invention. The fabrication of a transistor in accordance with the present invention begins with a substrate. In an embodiment of the present invention, the substrate is a monocrystalline silicon substrate, for example, when forming a bulk semiconductor device. In an embodiment of the present invention, the monocrystalline silicon substrate may include an epitaxial silicon film formed on the monocrystalline substrate as is well known in the art. In yet another embodiment of the present invention, the substrate is a silicon-on-insulator (SOI), such as substrate 300 as illustrated in FIG. 3A. In an embodiment of the present invention, the silicon-on-insulator substrate 300 includes an epitaxial silicon film 302 formed on a buried oxide layer 304 which in turn is formed on a monocrystalline silicon substrate 306. In an embodiment of the present invention, the buried oxide layer has a thickness between 200-2000 Å. Additionally, in an embodiment of the present invention, the epitaxial silicon film or layer 302 has a thickness of between 10-400 Å.

[0025] Isolation regions, not shown, are typically formed in the silicon film 302 or substrate adjacent to the device fabrication area to isolate the fabricated transistor from adjacent transistors. The epitaxial silicon film 302 is then doped to a conductivity type and concentration desired for the channel region of the device. In an embodiment of the present invention, when fabricating a p type transistor, the silicon film can be doped to an n type conductivity and when fabricating an n type device the silicon film 302 can be doped to a p type conductivity. Typically, the semiconductor film 302 will be doped to an n type or p type conductivity with a concentration level between 1×10¹⁶-1×10¹⁹atoms/cm³. In an embodiment of the present invention, the silicon film 302 is left undoped or intrinsic in order to fabricate a transistor with an undoped or intrinsic channel region.

[0026] Next, as shown in FIG. 3B, a gate dielectric layer 308 is formed on the epitaxial silicon film 302 and a gate electrode 310 formed on the gate dielectric layer 308. The gate dielectric layer can be a deposited or grown dielectric. In an embodiment of the present invention, the gate dielectric layer is a silicon dioxide or a silicon oxynitride dielectric film grown with a wet/dry oxidation process. In an embodiment of the present invention, the silicon oxide film is grown to a thickness between 5-15 Å. In an embodiment of the present invention, the gate dielectric layer is a deposited dielectric, such as but not limited to a high dielectric constant film (high k), such as a metal oxide dielectric, such as tantalum pentaoxide, titanium oxide, hafnium oxide, zirconium oxide, aluminum oxide, and various silicates or other high k dielectric, such lead zirconium titanate (PZT) and barium strontium titanate (BST). A high dielectric constant film can be formed by any well known technique, such as but not limited to chemical vapor deposition (CVD) and atomic layer deposition (ALD).

[0027] The gate electrode 310 can be formed by any well known technique, such as by blanket depositing a gate electrode material over substrate 300 and then utilizing well known photolithography and etching techniques to pattern the gate electrode material into a gate electrode 310. In an embodiment of the present invention, the gate electrode 310 has a pair of laterally opposite sidewalls separated by a distance which defines the gate length (Lg) of the transistor. In an embodiment of the present invention, gate electrode 310 has a gate length (Lg) of less than 50 nanometers. The gate electrode 310 may be formed from any suitable gate electrode material. In an embodiment of the present invention, the gate electrode material may comprise a polycrystalline silicon. In an embodiment of the present invention, the electrode material comprises a polycrystalline silicon germanium alloy. In yet another embodiment of the present invention, the gate electrode material may comprise a metal film, such as tungsten, tantalum and their nitrides. In an embodiment of the present invention, the gate electrode has a thickness or height between 200-3000 Å.

[0028] It is to be appreciated that when forming a nonplanar transistor, such as a tri-gate or dual gate transistor, epitaxial silicon film 302 would first be patterned into a silicon body having a top surface opposite the buried oxide layer 304 and a pair of laterally opposite sidewalls as is well known in the art. When forming a tri-gate device, the gate dielectric layer would be formed on the top surface and sidewalls of the fabricated semiconductor body and then the gate electrode formed on and adjacent to the gate dielectric layers so that the gate electrode surrounds the semiconductor body on three sides as is well known in the art. When forming a dual gate or FINFET device, a thick insulating layer may be left on the top surface of a semiconductor body to isolate the gate electrode from the top surface of a semiconductor body so that the gate electrode controls only the two sidewalls of the body as is well known in the art.

[0029] Next, after the formation of gate dielectric layer 308 and gate electrode 310, source/drain extensions 309 may be formed in semiconductor film 302 on opposite sides of gate electrode 310 as shown in FIG. 3B, if desired. Source/drain extensions 309 can be formed by, for example, ion implanting dopants into the silicon layer 302. The gate electrode 310 can act as a mask to prevent the doping of a channel region 320 during the ion implantation process resulting in the formation of source/drain extensions 309 which are formed in alignment with the outside edges of gate electrode 310. A subsequent anneal can be used to cause the dopants to slightly diffusion beneath the outside edges of the gate electrode 310 as shown in FIG. 3B. Then gate electrode 310 is a polysilicon gate electrode the source/drain extension implant process can be used to dope the polysilicon film to reduce its resistance. The source/drain extensions 309 can be used, for example, when the narrow bandgap semiconductor film for the source and drain regions is not extended beneath the gate electrode. When fabricating a transistor where the narrow bandgap semiconductor laterally extends beneath the gate electrode 310, the source/drain extension formation process may not be necessary. Omitting the source/drain extension process can help reduce the thermal budget of the front-end process and thereby improve device performance.

[0030] Next, as shown in FIG. 3C, a pair of thin sidewall spacers 312 are formed adjacent to the laterally opposite sidewalls of gate electrode 310. Sidewall spacers 312 can be formed by blanket depositing a conformal insulating film, such as silicon nitride, silicon oxynitride, or silicon oxide or a combination thereof over substrate 300 and gate electrode 310 and then anisotropically etching back the dielectric film to form spacers 312. The thickness of the deposited dielectric film determines the thickness of the spacers 312. In an embodiment of the present invention, the spacers 312 are formed to a thickness between 100-500 Å. In an embodiment of the present invention, the spacers 312 are formed from a silicon nitride film formed by a hot wall low pressure chemical vapor deposition process (LPCVD).

[0031] Next, a pair of recesses 316 are formed in silicon film 302 on opposite sides of gate electrode 308 as shown in FIG. 3D. In an embodiment of the present invention, recesses 316 extend beneath the outside edge of gate electrode 310 and gate dielectric layer 308 as shown in FIG. 3D. In an embodiment of the present invention, recesses 316 extend between approximately 50-70 Å beneath the outside edges of the gate electrode 310. In an embodiment of the present invention, the recesses are formed to a depth of approximately 5-350 Å beneath the surface 301 of silicon film 302 upon which the gate dielectric layer 308 is formed. In an embodiment of the present invention, a portion of the silicon film 302 remains in recess 316 above buried oxide layer 304 so that narrow bandgap semiconductor film can be subsequently selectively epitaxially grown thereon. Any well known and suitable etching technique can be utilized to form recesses 316. In an embodiment of the present invention, a selective etch process is used to form recesses 316. In a selective etch process, an etchant is used which only etches silicon films, such as epitaxial silicon layer 302 and not insulating films such as spacers 310, gate dielectric 308 and isolations regions. (If gate electrode 310 is formed from polycrystalline silicon, an insulating hard mask can be used to form gate electrode 310 then left on during the etching of recesses 316 to protect the silicon electrode from being etched). In an embodiment of the present invention, an isotropic etching processes, such as a wet etch, is used to form recesses 316 so that the recess 316 can laterally undercut spacers 312 and gate electrode 310. In an embodiment of the present invention, recesses 316 are formed with a wet etch comprising an ammonium hydroxide or asymmetric or symmetric tetra (alkyl) ammonium hydroxides (alkyl=methyl, ethyl, propyl, isopropyl, butyl, tert-butyl; symmetric meaning all 4 alkyl groups are the same).

[0032] Next, as shown in FIG. 3E, recesses 316 are filled with a narrow bandgap semiconductor film, such as but not limited to indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP). In an embodiment of the present invention, the narrow bandgap semiconductor 318 is deposited to a thickness to fill recess 318 and in another embodiment of the present invention, is deposited to a thickness sufficient to extend above the top surface 301 of silicon film 302 in order to form raised or elevated source and drain regions. In an embodiment of the present invention, the narrow bandgap semiconductor film extends at least 200 Å above top surface 301 of silicon film 302 and in an embodiment of the present invention, extends between 200-500 Å.

[0033] Any well known and suitable technique can be used to deposit narrow bandgap semiconductor film 318. In an embodiment of the present invention, the narrow bandgap semiconductor film 318 is grown with an epitaxial process, such as but not limited to, molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), and low pressure chemical vapor deposition (LPCVD).

[0034] In embodiment of the present invention, the narrow bandgap semiconductor film 318 is insitu doped (i.e., doped while it is deposited) to an n type or p type conductivity. Semiconductor film 318 can be doped to an n type conductivity utilizing dopant atoms, such as silicon (Si) or tellurium (Te) and can be doped to a p type conductivity atoms utilizing, for example, carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr). In an embodiment of the present invention, the narrow bandgap semiconductor film has a melting temperature between 550-500° C. so that it can be deposited at a relatively low temperature, such as less than 500° C., and still enable dopant atoms to substitute into the narrow bandgap semiconductor lattice without requiring an activation anneal. Eliminating an activation anneal reduces the thermal budget of the process used to fabricate the transistor.

[0035] In an alternative embodiment of the present invention, the narrow bandgap semiconductor film 318 can be deposited undoped and then subsequently doped by, for example, ion implantation or solid source diffusion.

[0036] In an embodiment of the present invention, the narrow bandgap semiconductor film 318 is selectively grown into recesses 316. In a selective deposition process, the narrow bandgap semiconductor forms only on silicon locations, such as epitaxial silicon film in recesses 316 and not on insulating or dielectric layers, such as sidewall spacers 312 and isolation regions. If gate electrode 310 is formed from a polycrystalline silicon or silicon germanium alloy, then an insulating hard mask can be used during the patterning of the gate electrode and left on during the growth of the narrow bandgap semiconductor 318 in order to prevent the formation of a narrow bandgap semiconductor film on the gate electrode. The epitaxial silicon film 302 in the lower parts of recesses 316 provide a single crystalline lattice from which an epitaxial narrow bandgap semiconductor film can be grown.

[0037] In an embodiment of the present invention, an InSb epitaxial silicon film 318 is grown in recess 316 utilizing a MOCVD process utilizing an equimolar gaseous mixture of volatized trimethylindium and stibane (SbH₃) with about 5% each by mass in a carrier gas such as argon. In an embodiment of the present invention, an indium antimonide (InSb) epitaxial film is grown utilizing molecular beam epitaxial (MBE) utilizing a solid source.

[0038] In embodiment of the present invention, non-alloyed ohmic contacts 340 are used to electrically couple the source and drain region to the upper levels of metallization 350. Accordingly, first an interlayer dielectric (ILD) 330, such as but not limited to silicon dioxide (SiO₂), fluorine doped silicon dioxide (SiOF) and carbon doped oxide (CDO), is blanket deposited over substrate 300 including gate electrode 310, spacers 312 and narrow bandgap semiconductor 318. The interlayer dielectric 330 is formed to a thickness sufficient to isolate the gate electrode 310 and narrow bandgap semiconductor 318 from the subsequently formed upper level of metallization 350. In an embodiment of the present invention, the interlayer dielectric is formed to a thickness between 500 Å-2000 Å. It is to be appreciated that an interlayer dielectric need not necessarily be a single layer dielectric and can be a composite dielectric layer formed from multiple insulating layers. After depositing the interlayer dielectric, the interlayer dielectric may be planarized to provide a planar top surface.

[0039] Next, contact openings can then be formed through interlayer dielectric 330 utilizing well known photolithography and etching techniques at locations where contacts 340 are desired to contact the narrow bandgap semiconductor 318. Conductive contacts 340 are then formed into the openings and make direct contact with the narrow bandgap semiconductor film 318. In an embodiment of the present invention, contacts 340 are formed by blanket depositing a conductive contact film by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD) into the openings and onto the top surface of ILD 330. The conductive film is then removed from the top surface of the ILD by, for example, plasma etch back or chemical mechanical planarization, to form contacts 340. In an embodiment of the present invention, the contacts are formed from a high conductivity metal or metals having a low work function, such as a work function less than 4 eV. In an embodiment of the present invention, the contacts 340 are bi-layer contacts including a thin adhesion layer 342 and a bulk metal 344 having a high conductivity such as illustrated in FIG. 3F. In an embodiment of the present invention, contacts 340 include a thin titanium (Ti) adhesion layer of less than 150 Å and a gold (Au) bulk material 344. In an embodiment of the present invention, the contacts 340 do not include any alloyed metals or silicides (i.e., metal silicon alloy, such as nickel silicide and titanium silicide). In this way, the thermal budget can remain low and device performance reliability improved. Next, upper levels of metallization 350 can then be formed in contact with contacts 340 to electrically couple the fabricated transistor with other transistors into functional circuits.

[0040] This completes the fabrication of a field effect transistor having source and drain regions formed from a narrow bandgap semiconductor.

[0041] FIG. 6 illustrates a system 600 in accordance with one embodiment. As illustrated, for the embodiment, system 600 includes computing device 602 for processing data. Computing device 602 may include a motherboard 604. Motherboard 604 may include in particular a processor 606, and a networking interface 608 coupled to a bus 610. More specifically, processor 606 may comprise the device 200 or 500 that has the earlier described narrow bandgap source and drain regions.

[0042] Depending on the applications, system 600 may include other components, including but are not limited to volatile and non-volatile memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, mass storage (such as hard disk, compact disk (CD), digital versatile disk (DVD) and so forth), and so forth. One or more of these components may also include the earlier described narrow bandgap source and drain regions.

[0043] In various embodiments, system 600 may be a personal digital assistant (PDA), a mobile phone, a tablet computing device, a laptop computing device, a desktop computing device, a set-top box, an entertainment control unit, a digital camera, a digital video recorder, a CD player, a DVD player, or other digital device of the like.

Claims

We claim:

1. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

a pair of source/drain regions on opposite sides of the gate electrode, the pair of source/drain regions comprising a doped semiconductor film directly beneath the gate electrode, wherein the semiconductor film has a bandgap of less than 0.75 eV;

wherein the semiconductor film is either:

doped to an n type conductivity with a dopant selected from the group consisting of tellurium (Te), silicon (Si) and sulfur (S); or

doped to a p type conductivity with a dopant selected from the group consisting of carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr).

2. The transistor of claim 1 wherein the semiconductor film is selected from the group consisting of indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP).

3. The transistor of claim 1 wherein the semiconductor film is indium phosphide (InP).

4. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer;

a pair of non-alloyed contacts on the doped semiconductor film.

5. The transistor of claim 4 wherein the non-alloyed contacts comprise a bi-layer of titanium/gold.

6. The transistor of claim 4 wherein the semiconductor film is selected from the group consisting of indium antimonide (InSb), indium arsenide (InAs), indium gallium arsenide (In_1-xGa_xAs(x>50%)) and indium phosphide (InP).

7. The transistor of claim 1 wherein the semiconductor film is doped to the n type conductivity with a dopant selected from the group consisting of tellurium (Te), silicon (Si) and sulfur (S).

8. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

wherein the SOI substrate comprises a silicon body having a top surface opposite a bottom surface formed on an insulating layer, and wherein the gate dielectric layer is formed on the top surface and sidewalls of the silicon body and the gate electrode is formed on the gate dielectric layer on the top surface of the silicon body and adjacent to the gate dielectric layer on the sidewalls of the silicon body.

9. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

10. The transistor of claim 4 wherein the semiconductor film is indium phosphide (InP).

11. The transistor of claim 1 wherein the semiconductor film is doped to the p type conductivity with a dopant selected from the group consisting of carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr).

12. The transistor of claim 3 further comprising a pair of non-alloyed contacts on the indium phosphide (InP) film.

13. The transistor of claim 12 wherein the non-alloyed contacts comprise a bi-layer of titanium/gold.

14. The transistor of claim 4 wherein the semiconductor film is doped to an n type conductivity.

15. The transistor of claim 14 wherein the indium phosphide (InP) film is doped to the n type conductivity with a dopant selected from the group consisting of tellurium (Te), silicon (Si) and sulfur (S).

16. The transistor of claim 9 wherein the SOI substrate comprises a silicon body having a top surface opposite a bottom surface formed on an insulating layer, and wherein the gate dielectric layer is formed on the top surface and sidewalls of the silicon body and the gate electrode is formed on the gate dielectric layer on the top surface of the silicon body and adjacent to the gate dielectric layer on the sidewalls of the silicon body.

17. The transistor of claim 4 wherein the semiconductor film is doped to a p type conductivity.

18. The transistor of claim 17 wherein the semiconductor film is doped to the p type conductivity with a dopant selected from the group consisting of carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr).

Patent Citations (623)

Patent	Date	Inventor	Cited By
US3387820(A)	1968-06-01	Sanderfer et al.	Applicant
US4231149(A)	1980-11-01	Chapman et al.	Applicant
US4487652(A)	1984-12-01	Almgren	Applicant
US4711701(A)	1987-12-01	McLevige	Applicant
US4818715(A)	1989-04-01	Chao	Applicant
US4905063(A)	1990-02-01	Beltram et al.	Applicant
US4906589(A)	1990-03-01	Chao	Applicant
US4907048(A)	1990-03-01	Huang	Applicant
US4994873(A)	1991-02-01	Madan	Applicant
US4996574(A)	1991-02-01	Shirasaki et al.	Applicant
US5023203(A)	1991-06-01	Choi	Applicant
US5120666(A)	1992-06-01	Gotou	Applicant
US5124777(A)	1992-06-01	Lee	Applicant
US5179037(A)	1993-01-01	Seabaugh	Examiner
US5216271(A)	1993-06-01	Takagi et al.	Applicant
US5218213(A)	1993-06-01	Gaul et al.	Applicant
US5278012(A)	1994-01-01	Yamanaka et al.	Applicant
US5278102(A)	1994-01-01	Horie	Applicant
US5308999(A)	1994-05-01	Gotou	Applicant
US5328810(A)	1994-07-01	Lowrey et al.	Applicant
US5338959(A)	1994-08-01	Kim et al.	Applicant
US5346836(A)	1994-09-01	Manning et al.	Applicant
US5346839(A)	1994-09-01	Sundaresan	Applicant
US5357119(A)	1994-10-01	Wang et al.	Applicant
US5391506(A)	1995-02-01	Tada et al.	Applicant
US5398641(A)	1995-03-01	Shih	Applicant
US5428237(A)	1995-06-01	Yuzurihara et al.	Applicant
US5466621(A)	1995-11-01	Hisamoto et al.	Applicant
US5475869(A)	1995-12-01	Gomi et al.	Applicant
US5479033(A)	1995-12-01	Baca et al.	Applicant
US5482877(A)	1996-01-01	Rhee	Applicant
US5514885(A)	1996-05-01	Myrick	Applicant
US5521859(A)	1996-05-01	Ema et al.	Applicant
US5539229(A)	1996-07-01	Noble, Jr et al.	Applicant
US5543351(A)	1996-08-01	Hirai et al.	Applicant
US5545586(A)	1996-08-01	Koh	Applicant
US5554870(A)	1996-09-01	Fitch et al.	Applicant
US5563077(A)	1996-10-01	Ha et al.	Applicant
US5576227(A)	1996-11-01	Hsu	Applicant
US5578513(A)	1996-11-01	Maegawa	Applicant
US5595919(A)	1997-01-01	Pan	Applicant
US5595941(A)	1997-01-01	Okamoto et al.	Applicant
US5652454(A)	1997-07-01	Iwamatsu et al.	Applicant
US5658806(A)	1997-08-01	Lin et al.	Applicant
US5665203(A)	1997-09-01	Lee et al.	Applicant
US5682048(A)	1997-10-01	Shinohara et al.	Applicant
US5698869(A)	1997-12-01	Yoshimi et al.	Examiner
US5701016(A)	1997-12-01	Burroughes et al.	Applicant
US5716879(A)	1998-02-01	Choi et al.	Applicant
US5739544(A)	1998-04-01	Yuki et al.	Applicant
US5760442(A)	1998-06-01	Shigyo et al.	Applicant
US5770513(A)	1998-06-01	Okaniwa	Examiner
US5773331(A)	1998-06-01	Solomon et al.	Applicant
US5776821(A)	1998-07-01	Haskell et al.	Applicant
US5793088(A)	1998-08-01	Choi et al.	Applicant
US5804848(A)	1998-09-01	Mukai	Applicant
US5811324(A)	1998-09-01	Yang	Applicant
US5814545(A)	1998-09-01	Seddon et al.	Applicant
US5814895(A)	1998-09-01	Hirayama	Applicant
US5821629(A)	1998-10-01	Wen et al.	Applicant
US5827769(A)	1998-10-01	Aminzadeh et al.	Applicant
US5844278(A)	1998-12-01	Mizuno et al.	Applicant
US5856225(A)	1999-01-01	Lee et al.	Applicant
US5859456(A)	1999-01-01	Efland et al.	Applicant
US5880015(A)	1999-03-01	Hata	Applicant
US5888309(A)	1999-03-01	Yu	Applicant
US5889304(A)	1999-03-01	Watanabe et al.	Applicant
US5899710(A)	1999-05-01	Mukai	Applicant
US5905285(A)	1999-05-01	Gardner et al.	Applicant
US5908313(A)	1999-06-01	Chau et al.	Applicant
US5952701(A)	1999-09-01	Bulucea et al.	Applicant
US5965914(A)	1999-10-01	Miyamoto	Applicant
US5976767(A)	1999-11-01	Li	Applicant
US5985726(A)	1999-11-01	Yu et al.	Applicant
US6013926(A)	2000-01-01	Oku et al.	Applicant
US6018176(A)	2000-01-01	Lim	Applicant
US6031249(A)	2000-02-01	Yamazaki et al.	Applicant
US6051452(A)	2000-04-01	Shigyo et al.	Applicant
US6054355(A)	2000-04-01	Inumiya et al.	Applicant
US6063675(A)	2000-05-01	Rodder	Applicant
US6063677(A)	2000-05-01	Rodder et al.	Applicant
US6066869(A)	2000-05-01	Noble et al.	Applicant
US6087208(A)	2000-07-01	Krivokapic et al.	Applicant
US6093621(A)	2000-07-01	Tseng	Applicant
US6114201(A)	2000-09-01	Wu	Applicant
US6114206(A)	2000-09-01	Yu	Applicant
US6117741(A)	2000-09-01	Chatterjee et al.	Applicant
US6120846(A)	2000-09-01	Hintermaier et al.	Applicant
US6130123(A)	2000-10-01	Liang et al.	Applicant
US6144072(A)	2000-11-01	Iwamatsu et al.	Applicant
US6150222(A)	2000-11-01	Gardner et al.	Applicant
US6153485(A)	2000-11-01	Pey et al.	Applicant
US6159808(A)	2000-12-01	Chuang	Applicant
US6163053(A)	2000-12-01	Kawashima	Applicant
US6165880(A)	2000-12-01	Yaung et al.	Applicant
US6174820(B1)	2001-01-01	Habermehl et al.	Applicant
US6190975(B1)	2001-02-01	Kubo et al.	Applicant
US6200865(B1)	2001-03-01	Gardner et al.	Applicant
US6218309(B1)	2001-04-01	Miller et al.	Applicant
US6251729(B1)	2001-06-01	Montree et al.	Applicant
US6251751(B1)	2001-06-01	Chu et al.	Applicant
US6251763(B1)	2001-06-01	Inumiya et al.	Applicant
US6252284(B1)	2001-06-01	Muller et al.	Applicant
US6259135(B1)	2001-07-01	Hsu et al.	Applicant
US6261921(B1)	2001-07-01	Yen et al.	Applicant
US6262456(B1)	2001-07-01	Yu et al.	Applicant
US6274503(B1)	2001-08-01	Hsieh	Applicant
US6287924(B1)	2001-09-01	Chao et al.	Applicant
US6294416(B1)	2001-09-01	Wu	Applicant
US6307235(B1)	2001-10-01	Forbes et al.	Applicant
US6310367(B1)	2001-10-01	Yagishita et al.	Applicant
US6317444(B1)	2001-11-01	Chakrabarti et al.	Applicant
US6319807(B1)	2001-11-01	Yeh et al.	Applicant
US6335251(B2)	2002-01-01	Miyano et al.	Applicant
US6358800(B1)	2002-03-01	Tseng	Applicant
US6359311(B1)	2002-03-01	Colinge et al.	Applicant
US6362111(B1)	2002-03-01	Laaksonen et al.	Applicant
US6368923(B1)	2002-04-01	Huang	Applicant
US6376317(B1)	2002-04-01	Forbes et al.	Applicant
US6383882(B1)	2002-05-01	Lee	Applicant
US6387820(B1)	2002-05-01	Sanderfer	Applicant
US6391782(B1)	2002-05-01	Yu	Applicant
US6396108(B1)	2002-05-01	Krivokapic et al.	Applicant
US6399970(B2)	2002-06-01	Kubo et al.	Applicant
US6403434(B1)	2002-06-01	Yu	Applicant
US6403981(B1)	2002-06-01	Yu	Applicant
US6407442(B2)	2002-06-01	Inoue et al.	Applicant
US6410371(B1)	2002-06-01	Yu et al.	Applicant
US6413802(B1)	2002-07-01	Hu et al.	Applicant
US6413877(B1)	2002-07-01	Annapragada	Applicant
US6424015(B1)	2002-07-01	Ishibashi et al.	Applicant
US6437550(B2)	2002-08-01	Andoh et al.	Applicant
US6457890(B1)	2002-10-01	Kohlruss et al.	Applicant
US6458662(B1)	2002-10-01	Yu	Applicant
US6459123(B1)	2002-10-01	Enders et al.	Applicant
US6465290(B1)	2002-10-01	Suguro et al.	Applicant
US6466621(B1)	2002-10-01	Hisamoto et al.	Applicant
US6472258(B1)	2002-10-01	Adkisson et al.	Applicant
US6475869(B1)	2002-11-01	Yu	Applicant
US6475890(B1)	2002-11-01	Yu	Applicant
US6479866(B1)	2002-11-01	Xiang	Applicant
US6483146(B2)	2002-11-01	Lee	Applicant
US6483151(B2)	2002-11-01	Wakabayashi et al.	Applicant
US6483156(B1)	2002-11-01	Adkisson et al.	Applicant
US6495403(B1)	2002-12-01	Skotnicki et al.	Applicant
US6498096(B2)	2002-12-01	Bruce et al.	Applicant
US6500767(B2)	2002-12-01	Chiou et al.	Applicant
US6501141(B1)	2002-12-01	Leu	Applicant
US6506692(B2)	2003-01-01	Andideh	Applicant
US6515339(B2)	2003-02-01	Shin et al.	Applicant
US6525403(B2)	2003-02-01	Inaba et al.	Applicant
US6526996(B1)	2003-03-01	Chang et al.	Applicant
US6534807(B2)	2003-03-01	Mandelman et al.	Applicant
US6537862(B2)	2003-03-01	Song	Applicant
US6537885(B1)	2003-03-01	Kang et al.	Applicant
US6537901(B2)	2003-03-01	Cha et al.	Applicant
US6541829(B2)	2003-04-01	Nishinohara et al.	Applicant
US6555879(B1)	2003-04-01	Krivokapic et al.	Applicant
US6562665(B1)	2003-05-01	Yu	Applicant
US6562687(B1)	2003-05-01	Deleonibus et al.	Applicant
US6566734(B2)	2003-05-01	Sugihara et al.	Applicant
US6583469(B1)	2003-06-01	Fried et al.	Applicant
US6605498(B1)	2003-08-01	Murthy et al.	Applicant
US6610576(B2)	2003-08-01	Nowak	Applicant
US6611029(B1)	2003-08-01	Ahmed et al.	Applicant
US6630388(B2)	2003-10-01	Sekigawa et al.	Applicant
US6635909(B2)	2003-10-01	Clark et al.	Applicant
US6642090(B1)	2003-11-01	Fried et al.	Applicant
US6642114(B2)	2003-11-01	Nakamura	Applicant
US6645797(B1)	2003-11-01	Buynoski et al.	Applicant
US6645826(B2)	2003-11-01	Yamazaki et al.	Applicant
US6645861(B2)	2003-11-01	Cabral et al.	Applicant
US6656853(B2)	2003-12-01	Ito	Applicant
US6657259(B2)	2003-12-01	Fried et al.	Applicant
US6660598(B2)	2003-12-01	Hanafi et al.	Applicant
US6664160(B2)	2003-12-01	Park et al.	Applicant
US6680240(B1)	2004-01-01	Maszara	Applicant
US6686231(B1)	2004-02-01	Ahmed et al.	Applicant
US6689650(B2)	2004-02-01	Gambino et al.	Applicant
US6693324(B2)	2004-02-01	Maegawa et al.	Applicant
US6696366(B1)	2004-02-01	Flanner et al.	Applicant
US6705571(B2)	2004-03-01	Shay et al.	Applicant
US6706571(B1)	2004-03-01	Yu et al.	Applicant
US6709982(B1)	2004-03-01	Buynoski et al.	Applicant
US6713396(B2)	2004-03-01	Anthony	Applicant
US6716684(B1)	2004-04-01	Krivokapic et al.	Applicant
US6716686(B1)	2004-04-01	Buynoski et al.	Applicant
US6716690(B1)	2004-04-01	Wang et al.	Applicant
US6730964(B2)	2004-05-01	Horiuchi	Applicant
US6744103(B2)	2004-06-01	Snyder	Applicant
US6756657(B1)	2004-06-01	Zhang et al.	Applicant
US6762469(B2)	2004-07-01	Mocuta et al.	Applicant
US6764884(B1)	2004-07-01	Yu et al.	Applicant
US6765303(B1)	2004-07-01	Krivokapic et al.	Applicant
US6770516(B2)	2004-08-01	Wu et al.	Applicant
US6774390(B2)	2004-08-01	Sugiyama et al.	Applicant
US6780694(B2)	2004-08-01	Doris et al.	Applicant
US6784071(B2)	2004-08-01	Chen et al.	Applicant
US6784076(B2)	2004-08-01	Gonzalez et al.	Applicant
US6787402(B1)	2004-09-01	Yu	Applicant
US6787406(B1)	2004-09-01	Hill et al.	Applicant
US6787439(B2)	2004-09-01	Ahmed et al.	Applicant
US6787845(B2)	2004-09-01	Deleonibus	Applicant
US6787854(B1)	2004-09-01	Yang et al.	Applicant
US6790733(B1)	2004-09-01	Natzle et al.	Applicant
US6794313(B1)	2004-09-01	Chang	Applicant
US6794718(B2)	2004-09-01	Nowak et al.	Applicant
US6798000(B2)	2004-09-01	Luyken et al.	Applicant
US6800885(B1)	2004-10-01	An et al.	Applicant
US6800910(B2)	2004-10-01	Lin et al.	Applicant
US6803631(B2)	2004-10-01	Dakshina-Murthy et al.	Applicant
US6812075(B2)	2004-11-01	Fried et al.	Applicant
US6812111(B2)	2004-11-01	Cheong et al.	Applicant
US6815277(B2)	2004-11-01	Fried et al.	Applicant
US6821834(B2)	2004-11-01	Ando	Applicant
US6825506(B2)	2004-11-01	Chau et al.	Applicant
US6830998(B1)	2004-12-01	Pan et al.	Applicant
US6831310(B1)	2004-12-01	Mathew et al.	Applicant
US6833588(B2)	2004-12-01	Yu et al.	Applicant
US6835614(B2)	2004-12-01	Hanafi et al.	Applicant
US6835618(B1)	2004-12-01	Dakshina-Murthy et al.	Applicant
US6838322(B2)	2005-01-01	Pham et al.	Applicant
US6844238(B2)	2005-01-01	Yeo et al.	Applicant
US6849556(B2)	2005-02-01	Takahashi	Applicant
US6849884(B2)	2005-02-01	Clark et al.	Applicant
US6852559(B2)	2005-02-01	Kwak et al.	Applicant
US6855588(B1)	2005-02-01	Liao et al.	Applicant
US6855606(B2)	2005-02-01	Chen et al.	Applicant
US6855990(B2)	2005-02-01	Yeo et al.	Applicant
US6858472(B2)	2005-02-01	Schoenfeld	Applicant
US6858478(B2)	2005-02-01	Chau et al.	Applicant
US6864519(B2)	2005-03-01	Yeo et al.	Applicant
US6864540(B1)	2005-03-01	Divakaruni et al.	Applicant
US6867433(B2)	2005-03-01	Yeo et al.	Applicant
US6867460(B1)	2005-03-01	Anderson et al.	Applicant
US6869868(B2)	2005-03-01	Chiu et al.	Applicant
US6869898(B2)	2005-03-01	Inaki et al.	Applicant
US6870226(B2)	2005-03-01	Maeda et al.	Applicant
US6881635(B1)	2005-04-01	Chidambarrao et al.	Applicant
US6884154(B2)	2005-04-01	Mizushima et al.	Applicant
US6885055(B2)	2005-04-01	Lee	Applicant
US6888199(B2)	2005-05-01	Nowak et al.	Applicant
US6890811(B2)	2005-05-01	Hou et al.	Applicant
US6891234(B1)	2005-05-01	Connelly et al.	Applicant
US6897527(B2)	2005-05-01	Dakshina-Murthy et al.	Applicant
US6902947(B2)	2005-06-01	Chinn et al.	Applicant
US6902962(B2)	2005-06-01	Yeo et al.	Applicant
US6909147(B2)	2005-06-01	Aller et al.	Applicant
US6909151(B2)	2005-06-01	Hareland et al.	Applicant
US6919238(B2)	2005-07-01	Bohr	Applicant
US6921691(B1)	2005-07-01	Li et al.	Applicant
US6921702(B2)	2005-07-01	Ahn et al.	Applicant
US6921963(B2)	2005-07-01	Krivokapic et al.	Applicant
US6921982(B2)	2005-07-01	Joshi et al.	Applicant
US6924190(B2)	2005-08-01	Dennison	Applicant
US6946377(B2)	2005-09-01	Chambers	Applicant
US6949433(B1)	2005-09-01	Hidehiko et al.	Applicant
US6955961(B1)	2005-10-01	Chung	Applicant
US6955969(B2)	2005-10-01	Djomehri et al.	Applicant
US6956281(B2)	2005-10-01	Smith et al.	Applicant
US6960517(B2)	2005-11-01	Rios et al.	Applicant
US6967351(B2)	2005-11-01	Fried et al.	Applicant
US6969878(B2)	2005-11-01	Coronel et al.	Applicant
US6970373(B2)	2005-11-01	Datta et al.	Applicant
US6974738(B2)	2005-12-01	Hareland et al.	Applicant
US6975014(B1)	2005-12-01	Krivokapic et al.	Applicant
US6977415(B2)	2005-12-01	Matsuo	Applicant
US6982433(B2)	2006-01-01	Hoffman et al.	Applicant
US6997415(B2)	2006-02-01	Wozniak et al.	Applicant
US6998301(B1)	2006-02-01	Yu et al.	Applicant
US6998318(B2)	2006-02-01	Park	Applicant
US7005366(B2)	2006-02-01	Chau et al.	Applicant
US7013447(B2)	2006-03-01	Mathew et al.	Applicant
US7018551(B2)	2006-03-01	Beintner et al.	Applicant
US7045401(B2)	2006-05-01	Lee et al.	Applicant
US7045407(B2)	2006-05-01	Keating et al.	Applicant
US7045441(B2)	2006-05-01	Chang et al.	Applicant
US7045451(B2)	2006-05-01	Shenai-Khatkhate et al.	Applicant
US7049654(B2)	2006-05-01	Chang	Applicant
US7056794(B2)	2006-06-01	Ku et al.	Applicant
US7060539(B2)	2006-06-01	Chidambarrao et al.	Applicant
US7061055(B2)	2006-06-01	Sekigawa et al.	Applicant
US7071064(B2)	2006-07-01	Doyle et al.	Applicant
US7074623(B2)	2006-07-01	Lochtefeld et al.	Applicant
US7074656(B2)	2006-07-01	Yeo et al.	Applicant
US7074662(B2)	2006-07-01	Lee et al.	Applicant
US7084018(B1)	2006-08-01	Ahmed et al.	Applicant
US7105390(B2)	2006-09-01	Brask et al.	Applicant
US7105891(B2)	2006-09-01	Visokay et al.	Applicant
US7105894(B2)	2006-09-01	Yeo et al.	Applicant
US7105934(B2)	2006-09-01	Anderson et al.	Applicant
US7112478(B2)	2006-09-01	Grupp et al.	Applicant
US7115945(B2)	2006-10-01	Lee et al.	Applicant
US7115954(B2)	2006-10-01	Shimizu et al.	Applicant
US7119402(B2)	2006-10-01	Kinoshita et al.	Applicant
US7122463(B2)	2006-10-01	Ohuchi	Applicant
US7132360(B2)	2006-11-01	Schaeffer et al.	Applicant
US7138320(B2)	2006-11-01	Bentum et al.	Applicant
US7141480(B2)	2006-11-01	Adam et al.	Applicant
US7141856(B2)	2006-11-01	Lee et al.	Applicant
US7154118(B2)	2006-12-01	Lindert et al.	Applicant
US7163851(B2)	2007-01-01	Abadeer et al.	Applicant
US7163898(B2)	2007-01-01	Mariani et al.	Applicant
US7172943(B2)	2007-02-01	Yeo et al.	Applicant
US7183137(B2)	2007-02-01	Lee et al.	Applicant
US7187043(B2)	2007-03-01	Arai et al.	Applicant
US7196372(B1)	2007-03-01	Yu et al.	Applicant
US7214991(B2)	2007-05-01	Yeo et al.	Applicant
US7238564(B2)	2007-07-01	Ko et al.	Applicant
US7241653(B2)	2007-07-01	Hareland et al.	Applicant
US7247547(B2)	2007-07-01	Zhu et al.	Applicant
US7247578(B2)	2007-07-01	Brask	Applicant
US7250367(B2)	2007-07-01	Vaartstra et al.	Applicant
US7250645(B1)	2007-07-01	Wang et al.	Applicant
US7250655(B2)	2007-07-01	Bae et al.	Applicant
US7256455(B2)	2007-08-01	Ahmed et al.	Applicant
US7268024(B2)	2007-09-01	Yeo et al.	Applicant
US7268058(B2)	2007-09-01	Chau et al.	Applicant
US7291886(B2)	2007-11-01	Doris et al.	Applicant
US7297600(B2)	2007-11-01	Oh et al.	Applicant
US7304336(B2)	2007-12-01	Cheng et al.	Applicant
US7323710(B2)	2008-01-01	Kim et al.	Applicant
US7326634(B2)	2008-02-01	Lindert et al.	Applicant
US7329913(B2)	2008-02-01	Brask et al.	Applicant
US7339241(B2)	2008-03-01	Orlowski et al.	Applicant
US7341902(B2)	2008-03-01	Anderson et al.	Applicant
US7348284(B2)	2008-03-01	Doyle et al.	Applicant
US7348642(B2)	2008-03-01	Nowak	Applicant
US7354817(B2)	2008-04-01	Watanabe et al.	Applicant
US7358121(B2)	2008-04-01	Chau et al.	Applicant
US7385262(B2)	2008-06-01	O'Keeffe et al.	Applicant
US7388259(B2)	2008-06-01	Doris et al.	Applicant
US7396730(B2)	2008-07-01	Li	Applicant
US7439120(B2)	2008-10-01	Pei	Applicant
US7452778(B2)	2008-11-01	Chen et al.	Applicant
US7456471(B2)	2008-11-01	Anderson et al.	Applicant
US7456476(B2)	2008-11-01	Hareland et al.	Applicant
US7479421(B2)	2009-01-01	Kavalieros et al.	Applicant
US7585734(B2)	2009-09-01	Kang et al.	Applicant
US7612416(B2)	2009-11-01	Takeuchi et al.	Applicant
US7655989(B2)	2010-02-01	Zhu et al.	Applicant
US7701018(B2)	2010-04-01	Yamagami et al.	Applicant
US2001/0019886(A1)	2001-09-01	Bruce et al.	Applicant
US2001/0026985(A1)	2001-10-01	Kim et al.	Applicant
US2001/0040907(A1)	2001-11-01	Chakrabarti	Examiner
US2002/0011612(A1)	2002-01-01	Hieda	Applicant
US2002/0036290(A1)	2002-03-01	Inaba et al.	Applicant
US2002/0037619(A1)	2002-03-01	Sugihara et al.	Applicant
US2002/0048918(A1)	2002-04-01	Grider et al.	Applicant
US2002/0058374(A1)	2002-05-01	Kim et al.	Applicant
US2002/0074614(A1)	2002-06-01	Furuta et al.	Applicant
US2002/0081794(A1)	2002-06-01	Ito	Applicant
US2002/0096724(A1)	2002-07-01	Liang et al.	Applicant
US2002/0142529(A1)	2002-10-01	Matsuda et al.	Applicant
US2002/0149031(A1)	2002-10-01	Kim et al.	Applicant
US2002/0160553(A1)	2002-10-01	Yamanaka et al.	Applicant
US2002/0166838(A1)	2002-11-01	Nagarajan	Applicant
US2002/0167007(A1)	2002-11-01	Yamazaki et al.	Applicant
US2002/0177263(A1)	2002-11-01	Hanafi et al.	Applicant
US2002/0177282(A1)	2002-11-01	Song	Applicant
US2003/0036290(A1)	2003-02-01	Hsieh et al.	Applicant
US2003/0042542(A1)	2003-03-01	Maegawa et al.	Applicant
US2003/0057477(A1)	2003-03-01	Hergenrother et al.	Applicant
US2003/0057486(A1)	2003-03-01	Gambino	Applicant
US2003/0067017(A1)	2003-04-01	Ieong et al.	Applicant
US2003/0085194(A1)	2003-05-01	Hopkins, Jr.	Applicant
US2003/0098479(A1)	2003-05-01	Murthy et al.	Applicant
US2003/0098488(A1)	2003-05-01	O'Keeffe et al.	Applicant
US2003/0102497(A1)	2003-06-01	Fried et al.	Applicant
US2003/0102518(A1)	2003-06-01	Fried et al.	Applicant
US2003/0111686(A1)	2003-06-01	Nowak	Applicant
US2003/0122186(A1)	2003-07-01	Sekigawa et al.	Applicant
US2003/0143791(A1)	2003-07-01	Cheong et al.	Applicant
US2003/0151077(A1)	2003-08-01	Mathew et al.	Applicant
US2003/0174534(A1)	2003-09-01	Clark et al.	Applicant
US2003/0186167(A1)	2003-10-01	Johnson Jr et al.	Applicant
US2003/0190766(A1)	2003-10-01	Gonzalez et al.	Applicant
US2003/0201458(A1)	2003-10-01	Clark et al.	Applicant
US2003/0203636(A1)	2003-10-01	Hieda	Applicant
US2003/0227036(A1)	2003-12-01	Sugiyama et al.	Applicant
US2004/0011910(A1)	2004-01-01	Nowak et al.	Applicant
US2004/0016968(A1)	2004-01-01	Coronel et al.	Applicant
US2004/0029323(A1)	2004-02-01	Shimizu et al.	Applicant
US2004/0029345(A1)	2004-02-01	Deleonibus et al.	Applicant
US2004/0029393(A1)	2004-02-01	Ying et al.	Applicant
US2004/0031979(A1)	2004-02-01	Lochtefeld et al.	Applicant
US2004/0033639(A1)	2004-02-01	Chinn et al.	Applicant
US2004/0036118(A1)	2004-02-01	Abadeer et al.	Applicant
US2004/0036126(A1)	2004-02-01	Chau et al.	Applicant
US2004/0036127(A1)	2004-02-01	Chau et al.	Applicant
US2004/0038436(A1)	2004-02-01	Mori et al.	Applicant
US2004/0038533(A1)	2004-02-01	Liang	Applicant
US2004/0061178(A1)	2004-04-01	Lin et al.	Applicant
US2004/0063286(A1)	2004-04-01	Kim et al.	Applicant
US2004/0070020(A1)	2004-04-01	Fujiwara et al.	Applicant
US2004/0075149(A1)	2004-04-01	Fitzgerald et al.	Applicant
US2004/0082125(A1)	2004-04-01	Hou et al.	Applicant
US2004/0092062(A1)	2004-05-01	Ahmed et al.	Applicant
US2004/0092067(A1)	2004-05-01	Hanafi et al.	Applicant
US2004/0094807(A1)	2004-05-01	Chau et al.	Applicant
US2004/0099903(A1)	2004-05-01	Yeo et al.	Applicant
US2004/0099966(A1)	2004-05-01	Chau et al.	Examiner
US2004/0108523(A1)	2004-06-01	Chen et al.	Applicant
US2004/0108558(A1)	2004-06-01	Kwak et al.	Applicant
US2004/0110097(A1)	2004-06-01	Ahmed et al.	Applicant
US2004/0110331(A1)	2004-06-01	Yeo et al.	Applicant
US2004/0113181(A1)	2004-06-01	Wicker	Applicant
US2004/0124492(A1)	2004-07-01	Matsuo	Applicant
US2004/0126975(A1)	2004-07-01	Ahmed et al.	Applicant
US2004/0132236(A1)	2004-07-01	Doris et al.	Applicant
US2004/0132567(A1)	2004-07-01	Schonnenbeck	Applicant
US2004/0145000(A1)	2004-07-01	An et al.	Applicant
US2004/0145019(A1)	2004-07-01	Dakshina-Murthy et al.	Applicant
US2004/0166642(A1)	2004-08-01	Chen et al.	Applicant
US2004/0169221(A1)	2004-09-01	Ko et al.	Applicant
US2004/0169269(A1)	2004-09-01	Yeo et al.	Applicant
US2004/0173815(A1)	2004-09-01	Yeo et al.	Applicant
US2004/0173846(A1)	2004-09-01	Hergenrother et al.	Applicant
US2004/0180491(A1)	2004-09-01	Arai et al.	Applicant
US2004/0191980(A1)	2004-09-01	Rios et al.	Applicant
US2004/0195624(A1)	2004-10-01	Liu et al.	Applicant
US2004/0197975(A1)	2004-10-01	Krivokapic et al.	Applicant
US2004/0198003(A1)	2004-10-01	Yeo et al.	Applicant
US2004/0203254(A1)	2004-10-01	Conley et al.	Applicant
US2004/0209463(A1)	2004-10-01	Kim et al.	Applicant
US2004/0217420(A1)	2004-11-01	Yeo et al.	Applicant
US2004/0219722(A1)	2004-11-01	Pham et al.	Applicant
US2004/0219780(A1)	2004-11-01	Ohuchi	Applicant
US2004/0222473(A1)	2004-11-01	Risaki	Applicant
US2004/0227187(A1)	2004-11-01	Cheng et al.	Applicant
US2004/0238887(A1)	2004-12-01	Nihey	Applicant
US2004/0238915(A1)	2004-12-01	Chen et al.	Applicant
US2004/0253792(A1)	2004-12-01	Cohen et al.	Applicant
US2004/0256647(A1)	2004-12-01	Lee et al.	Applicant
US2004/0262683(A1)	2004-12-01	Bohr et al.	Applicant
US2004/0262699(A1)	2004-12-01	Rios et al.	Applicant
US2004/0266076(A1)	2004-12-01	Doris et al.	Applicant
US2005/0017377(A1)	2005-01-01	Joshi et al.	Applicant
US2005/0019993(A1)	2005-01-01	Lee et al.	Applicant
US2005/0020020(A1)	2005-01-01	Collaert et al.	Applicant
US2005/0023633(A1)	2005-02-01	Yeo et al.	Applicant
US2005/0035391(A1)	2005-02-01	Lee et al.	Applicant
US2005/0035415(A1)	2005-02-01	Yeo et al.	Applicant
US2005/0040444(A1)	2005-02-01	Cohen	Applicant
US2005/0059214(A1)	2005-03-01	Cheng et al.	Applicant
US2005/0073060(A1)	2005-04-01	Datta et al.	Applicant
US2005/0093028(A1)	2005-05-01	Chambers	Applicant
US2005/0093067(A1)	2005-05-01	Yeo et al.	Applicant
US2005/0093075(A1)	2005-05-01	Bentum et al.	Applicant
US2005/0093154(A1)	2005-05-01	Kottantharayil et al.	Applicant
US2005/0104055(A1)	2005-05-01	Kwak et al.	Applicant
US2005/0104096(A1)	2005-05-01	Lee et al.	Applicant
US2005/0110082(A1)	2005-05-01	Cheng et al.	Applicant
US2005/0116218(A1)	2005-06-01	Yang	Applicant
US2005/0116289(A1)	2005-06-01	Boyd et al.	Applicant
US2005/0118790(A1)	2005-06-01	Lee et al.	Applicant
US2005/0127362(A1)	2005-06-01	Zhang et al.	Applicant
US2005/0127632(A1)	2005-06-01	Gehret	Applicant
US2005/0133829(A1)	2005-06-01	Kunii et al.	Applicant
US2005/0133866(A1)	2005-06-01	Chau et al.	Applicant
US2005/0136584(A1)	2005-06-01	Boyanov et al.	Applicant
US2005/0139860(A1)	2005-06-01	Snyder et al.	Applicant
US2005/0145894(A1)	2005-07-01	Chau et al.	Applicant
US2005/0145941(A1)	2005-07-01	Bedell et al.	Applicant
US2005/0145944(A1)	2005-07-01	Murthy et al.	Applicant
US2005/0148131(A1)	2005-07-01	Brask	Applicant
US2005/0148137(A1)	2005-07-01	Brask et al.	Applicant
US2005/0153494(A1)	2005-07-01	Ku et al.	Applicant
US2005/0156171(A1)	2005-07-01	Brask et al.	Applicant
US2005/0156202(A1)	2005-07-01	Rhee et al.	Applicant
US2005/0156227(A1)	2005-07-01	Jeng	Applicant
US2005/0161739(A1)	2005-07-01	Anderson et al.	Applicant
US2005/0162928(A1)	2005-07-01	Rosmeulen	Applicant
US2005/0167766(A1)	2005-08-01	Yagishita	Applicant
US2005/0170593(A1)	2005-08-01	Kang et al.	Applicant
US2005/0184316(A1)	2005-08-01	Kim et al.	Applicant
US2005/0189583(A1)	2005-09-01	Kim et al.	Applicant
US2005/0191795(A1)	2005-09-01	Chidambarrao et al.	Applicant
US2005/0199919(A1)	2005-09-01	Liu	Applicant
US2005/0202604(A1)	2005-09-01	Cheng et al.	Applicant
US2005/0215014(A1)	2005-09-01	Ahn et al.	Applicant
US2005/0215022(A1)	2005-09-01	Adam et al.	Applicant
US2005/0224797(A1)	2005-10-01	Ko et al.	Applicant
US2005/0224798(A1)	2005-10-01	Buss	Applicant
US2005/0224800(A1)	2005-10-01	Lindert	Applicant
US2005/0227498(A1)	2005-10-01	Furukawa et al.	Applicant
US2005/0230763(A1)	2005-10-01	Huang et al.	Applicant
US2005/0233156(A1)	2005-10-01	Senzaki et al.	Applicant
US2005/0239252(A1)	2005-10-01	Ahn et al.	Applicant
US2005/0255642(A1)	2005-11-01	Liu	Applicant
US2005/0266645(A1)	2005-12-01	Park	Applicant
US2005/0272192(A1)	2005-12-01	Oh et al.	Applicant
US2005/0277294(A1)	2005-12-01	Schaeffer et al.	Applicant
US2005/0280121(A1)	2005-12-01	Doris et al.	Applicant
US2006/0014338(A1)	2006-01-01	Doris et al.	Applicant
US2006/0040054(A1)	2006-02-01	Pearlstein et al.	Applicant
US2006/0043500(A1)	2006-03-01	Chen et al.	Applicant
US2006/0046521(A1)	2006-03-01	Vaartstra et al.	Applicant
US2006/0063469(A1)	2006-03-01	Talieh et al.	Applicant
US2006/0068590(A1)	2006-03-01	Lindert et al.	Applicant
US2006/0068591(A1)	2006-03-01	Radosavljevic et al.	Applicant
US2006/0071275(A1)	2006-04-01	Brask et al.	Applicant
US2006/0071299(A1)	2006-04-01	Doyle et al.	Applicant
US2006/0086977(A1)	2006-04-01	Shah et al.	Applicant
US2006/0138548(A1)	2006-06-01	Richards et al.	Applicant
US2006/0154478(A1)	2006-07-01	Hsu et al.	Applicant
US2006/0170066(A1)	2006-08-01	Mathew et al.	Applicant
US2006/0172479(A1)	2006-08-01	Furukawa et al.	Applicant
US2006/0172480(A1)	2006-08-01	Wang et al.	Applicant
US2006/0172497(A1)	2006-08-01	Hareland et al.	Applicant
US2006/0180859(A1)	2006-08-01	Radosavljevic et al.	Applicant
US2006/0202270(A1)	2006-09-01	Son et al.	Applicant
US2006/0204898(A1)	2006-09-01	Gutsche et al.	Applicant
US2006/0205164(A1)	2006-09-01	Ko et al.	Applicant
US2006/0211184(A1)	2006-09-01	Boyd et al.	Applicant
US2006/0220131(A1)	2006-10-01	Kinoshita et al.	Applicant
US2006/0227595(A1)	2006-10-01	Chuang et al.	Applicant
US2006/0240622(A1)	2006-10-01	Lee et al.	Applicant
US2006/0244066(A1)	2006-11-01	Yeo et al.	Applicant
US2006/0263699(A1)	2006-11-01	Abatchev et al.	Applicant
US2006/0281325(A1)	2006-12-01	Chou et al.	Applicant
US2006/0286729(A1)	2006-12-01	Kavalieros et al.	Applicant
US2007/0001219(A1)	2007-01-01	Radosavljevic et al.	Applicant
US2007/0023795(A1)	2007-02-01	Nagano et al.	Applicant
US2007/0029624(A1)	2007-02-01	Nowak	Applicant
US2007/0045735(A1)	2007-03-01	Orlowski et al.	Applicant
US2007/0045748(A1)	2007-03-01	Booth et al.	Applicant
US2007/0048930(A1)	2007-03-01	Figura et al.	Applicant
US2007/0052041(A1)	2007-03-01	Sorada et al.	Applicant
US2007/0069293(A1)	2007-03-01	Kavalieros et al.	Applicant
US2007/0093010(A1)	2007-04-01	Mathew et al.	Applicant
US2007/0108514(A1)	2007-05-01	Inoue et al.	Applicant
US2007/0145487(A1)	2007-06-01	Kavalieros et al.	Applicant
US2007/0187682(A1)	2007-08-01	Takeuchi et al.	Applicant
US2007/0241414(A1)	2007-10-01	Narihiro	Applicant
US2007/0259501(A1)	2007-11-01	Xiong et al.	Applicant
US2007/0262389(A1)	2007-11-01	Chau et al.	Applicant
US2008/0017890(A1)	2008-01-01	Yuan et al.	Applicant
US2008/0017934(A1)	2008-01-01	Kim et al.	Applicant
US2008/0111163(A1)	2008-05-01	Russ et al.	Applicant
US2008/0116515(A1)	2008-05-01	Gossner et al.	Applicant
US2008/0128796(A1)	2008-06-01	Zhu et al.	Applicant
US2008/0128797(A1)	2008-06-01	Dyer et al.	Applicant
US2008/0212392(A1)	2008-09-01	Bauer	Applicant
US2008/0237655(A1)	2008-10-01	Nakabayashi et al.	Applicant
US2008/0258207(A1)	2008-10-01	Radosavljevic et al.	Applicant
US2009/0061572(A1)	2009-03-01	Hareland et al.	Applicant
US2009/0090976(A1)	2009-04-01	Kavalieros et al.	Applicant
US2009/0099181(A1)	2009-04-01	Wurster et al.	Applicant
US2010/0200923(A1)	2010-08-01	Chen et al.	Applicant
DE10203998(A1)	2003-08-01		Applicant
EP510667	1992-10-01		Applicant
EP623963(A1)	1994-11-01		Applicant
EP1091413(A2)	2001-04-01		Applicant
EP1091413	2001-04-01		Applicant
EP1202335(A2)	2002-05-01		Applicant
EP1566844(A2)	2005-08-01		Applicant
GB2156149	1985-10-01		Applicant
JP56073454	1981-06-01		Applicant
JP56073454(A)	1981-06-01		Applicant
JP59145538(A)	1984-08-01		Applicant
JP2-303048(A)	1990-12-01		Applicant
JP6005856	1994-01-01		Applicant
JP6005856	1994-01-01		Applicant
JP6-061260	1994-03-01		Applicant
JP6-151387(A)	1994-05-01		Applicant
JP6151387	1994-05-01		Applicant
JP6177089	1994-06-01		Applicant
JP406177089(A)	1994-06-01		Applicant
JP6224440(A)	1994-08-01		Applicant
JP7-50421(A)	1995-02-01		Applicant
JP9-074205	1997-03-01		Applicant
JP9162301(A)	1997-06-01		Applicant
JP200037842(A)	2000-02-01		Applicant
JP2000037842	2000-02-01		Applicant
JP2001-189453	2001-07-01		Applicant
JP2001338987	2001-12-01		Applicant
JP2001338987	2001-12-01		Applicant
JP2002-298051	2002-10-01		Applicant
JP2002298051	2002-10-01		Applicant
JP2002-110977(A)	2002-12-01		Applicant
JP2003-229575	2003-08-01		Applicant
JP2003-298051	2003-10-01		Applicant
JP2004-221334(A)	2004-08-01		Applicant
JP2005-173606	2006-12-01		Applicant
KR100222363	1999-10-01		Applicant
TW200414538	1992-08-01		Applicant
TW200414538	1992-08-01		Applicant
TW200518310	1992-11-01		Applicant
TW200518310	1998-11-01		Applicant
TW508669	2002-11-01		Applicant
TW516232	2003-01-01		Applicant
TW546713	2003-08-01		Applicant
TW548799	2003-08-01		Applicant
TW561530	2003-11-01		Applicant
TW200402872(A)	2004-02-01		Applicant
TW200405408(A)	2004-04-01		Applicant
TW591798	2004-06-01		Applicant
TW594990	2004-06-01		Applicant
TW200414539	2004-08-01		Applicant
TW200417034	2004-09-01		Applicant
TW200417034	2004-09-01		Applicant
TWI223449	2004-11-01		Applicant
TWI231994	2005-05-01		Applicant
TWI238524	2005-08-01		Applicant
TWI239102	2005-09-01		Applicant
TW200729407	2007-08-01		Applicant
TWI321830	2010-03-01		Applicant
WO2/43151(A1)	2002-05-01		Applicant
WO2/095814	2002-11-01		Applicant
WO-02095814	2002-11-01		Applicant
WO3/003442	2003-01-01		Applicant
WO-03003442	2003-01-01		Applicant
WO2004/059726(A1)	2004-07-01		Applicant
WO2005/034212(A2)	2005-04-01		Applicant
WO2005/036651(A1)	2005-04-01		Applicant
WO-2005036651	2005-04-01		Applicant
WO2005/098963(A1)	2005-10-01		Applicant
WO2006/007350(A1)	2006-01-01		Applicant
WO2006/078469(A1)	2006-07-01		Applicant
WO2007/002426(A2)	2007-01-01		Applicant
WO2007/041152(A1)	2007-04-01		Applicant
WO-2007038575	2007-04-01		Applicant

Non-Patent Literature (91)

Buchanan, D. A., et al., Fabrication of Midgap Metal Gates Compatible With Ultrathin Dielectrics, Applied Physics Letters, vol. 73.12, Sep. 21, 1998, 3 pgs.Applicant
Claflin, B., et al., Interface Studies of Tungsten Nitride and Titanium Nitride Composite Metal Gate Electrodes With Thin Dielectric Layers, Journal of Vacuum Science and Technology A 16.3, May/Jun. 1998, 5 pgs.Applicant
Collaert, N., et al., a Functional 41-stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node, IEEE Electron Device Letters, vol. 25, No. 8, Aug. 2004, 3 pgs.Applicant
Hwang, Jeong-Mo, et al., Novel Polysilicon/Tin Stacked-Gate Structure for Fully-Depleted SOI/CMOS, International Electronic Devices Meeting Technical Digest, 1992, 4 pgs.Applicant
Nackaerts, et al., “A 0.314um2 6T-SRAM Cell build with Tall Triple-Gate Devices for 45nm node applications using 0.75NA 193nm lithography”, IEEE, 2004, 4 pgs.Applicant
Nowak, Edward J., et al., “Turning Silicon on its Edge”, IEEE Circuits & Devices Magazine vol. 1, Jan./Feb. 2004, 12 pgs.Applicant
Park, Donggun, et al., 3-dimensional nano-CMOS Transistors to Overcome Scaling Limits, IEEE 2004, ISBN 0-7803-8511-X, 6 pgs.Applicant
Subramanian, V., “A Bulk-Si-Compatible Ultrathin-body SOI Technology for Sub-100m MOSFETS”, Proceeding of the 57th Annual Device Research Conference, (1999), pp. 28-29.Applicant
Sugizaki, T., et al., Novel Multi-bit SONOS Type Flash Memory Using a High-k Charge Trapping Layer, VLSI Technology, 2003. Digest of Technical Papers. Symposium on 10-12, Jun. 2003, 2 pgs.Applicant
Tang, Stephen H., et al., FinFET—A Quasi-Planar Double-Gate MOSFET, IEEE International Solid-State Circuits Conference, Feb. 6, 2001, 3 pgs.Applicant
Tokoro, Kenji, et al., Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions, International Symposium on Micromechatronics and Human Science, IEEE, 1998, 6 pgs.Applicant
Wang, X., et al., “Band alignments in sidewall strained Si/strained SiGe heterostructures”, (May 28, 2002), 1-5.Applicant
Wolf, Stanley, et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sep. 1986, 3 pgs.Applicant
International Search Report PCT/US2003/026242.Applicant
International Search Report PCT/US2003/039727.Applicant
International Search Report PCT/US2003/040320.Applicant
International Search Report PCT/US2005/000947.Applicant
International Search Report PCT/US2005/010505.Applicant
International Search Report PCT/US2005/020339.Applicant
International Search Report PCT/US2005/033439.Applicant
International Search Report PCT/US2005/035380.Applicant
International Search Report PCT/US2004/032442.Applicant
International Search Report PCT/US2006/024516.Applicant
International Search Report and Written Opinion PCT/US2006/000378.Applicant
International Search Report PCT/US2006/037643.Applicant
International Search Report PCT/US2005/037169.Applicant
Sung Min Kim, et al., A Novel Multi-channel Field Effect Transistor (McFET) on Bulk Si for High Performance Sub-80nm Application, IEDM 04-639, 2004 IEEE, pp. 27.4.1-27.4.4.Applicant
Yang-Kyu Choi, et al., “A Spacer Patterning Technology for Nanoscale CMOS” IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002, pp. 436-441.Applicant
W. Xiong, et al., “Corner Effect in Multiple-Gate SOI MOSFETs” 2003 IEEE, pp. 111-113.Applicant
Weize Xiong, et al., “Improvement of FinFET Electrical Characteristics by Hydrogen Annealing” IEEE Electron Device Letters, vol. 25, No. 8, Aug. 2004, XP-001198998, pp. 541-543.Applicant
Fu-Liang Yang, et al., “5nm-Gate Nanowire FinFET” 2004 Symposium on VLSI Technology Digest of Technical Papers, 2004 IEEE, pp. 196-197.Applicant
Jing Guo et al. “Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors” Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3192-2194.Applicant
Ali Javey et al., “High-K Dielectrics for Advanced Carbon-Nanotube Transistors and Logic Gates”, Advance Online Publication, Published online, Nov. 17, 2002, pp. 1-6.Applicant
Richard Martel et al., “Carbon Nanotube Field Effect Transistors for Logic Applications” IBM, T.J. Watson Research Center, 2001 IEEE, IEDM 01, pp. 159-162.Applicant
David M. Fried et al., “Improved Independent Gate N-Type FinFET Fabrication and Characterization”, IEEE Electron Device Letters, vol. 24, No. 9, Sep. 2003, pp. 592-594.Applicant
David M. Fried et al., “Improved Independent Gate P-Type Independent-Gate FinFETs”, IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 199-201.Applicant
Charles Kuo et al. “A Capacitorless Double Gate DRAM Technology for Sub-100-nm Embedded and Stand-Alone Memory Applications, IEEE Transactions on Electron Devices”, vol. 50, No. 12, Dec. 2003, pp. 2408-2416.Applicant
Charles Kuo et al., “A Capacitorless Double-Gate DRAM Cell Design for High Density Applications”, 2002 IEEE International Electron Devices Meeting Technical Digest, Dec. 2002, pp. 843-846.Applicant
Takashi Ohsawa et al., “Memory Design Using a One-Transistor Gain Cell on SOI”, IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, pp. 1510-1522.Applicant
T. Tanaka et al., Scalability Study on a Capacitorless 1T-DRAM: From Single-Gate PD-SOI to Double-Gate FinDram, 2004 IEEE International Electron Devices Meeting Technical Digest, Dec. 2004, (4 pgs.).Applicant
V. Subramanian et al. “A Bulk Si-Compatible Ultrathin-Body SOI Technology for Sub-100nm MOSFETS”, Proceedings of the 57th Annual Device Reach Conference, (1999) pp. 28-29.Applicant
Hisamoto et al. “A Folded-Channel MOSFET for Deep-sub-tenth Micron Era”, 1998 IEEE International Electron Device Meeting Technical Digest, (1998) pp. 1032-1034.Applicant
Huang et al., “Sub 50nm FinFet: PMOS”, 1999 IEEE International Electron Device Meeting Technical Digets, (1999) pp. 67-70.Applicant
Auth et al., “Vertical, Fully-Depleted, Surroundings Gate MOSFETS on Sub 0.1um Thick Silicon Pillars”, 1996 54th Annual Device Research Conference Digest, (1996) pp. 108-109.Applicant
Hisamoto et al., “A Fully Depleted Lean-Channel Transistor (DELTA)-A Novel Vertical Ultrathin SOI MOSFET”, IEEE Electron Device Letters, vol. 11 No. 1, (1990) pp. 36-38.Applicant
Jong-Tae Park et al., “Pi-Gate SOI MOSFET” IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 405-406.Applicant
Digh Hisamoto et al., “FinFet-A Self Aligned Double-Gate MOSFET Scalable to 20nm”, IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.Applicant
T. Park et al., “Fabrication of Body-Tied FinFETs (Omega MOSFETS) Using Bulk Si Wafers”, 2003 Symposia on VLSI Technology Digest of Technical Papers, Jun. 2003, pp. 135-136.Applicant
A. Burenkov et al., “Corner Effect in Double and Triple Gate FinFets”, IEEE 2003, pp. 135-138, Sep. 2003.Applicant
S.T. Chang et al., “3-D Simulation of Strained Si/SiGe Heterojunction FinFETs”, pp. 176-177, Dec. 2003.Applicant
B. Jin et al., “Mobility Enhancement in Compressively Strained SiGe Surface Channel PMOS Transistors with Hf02/TiN Gate Stack”, Proceedings of the First Joint International Symposium, 206th Meeting of Electrochemical Society, Oct. 2004, pp. 111-122.Applicant
R. Chau, “Advanced Metal Gate/High-K Dielectric Stacks for High-Performance CMOS Transistors”, Proceedings of AVS 5th International Conference of Microelectronics and Interfaces, Mar. 2004, (3 pgs.).Applicant
T. Ludwig et al., “FinFET Technology for Future Microprocessors” 2003 IEEE, pp. 33-34, Oct. 2003.Applicant
Peter A. Stolk et al. “Modeling Statistical Dopant Fluctuations in MOS Transistors”, 1998 IEEE, IEEE Transactions on Electron Devices, vol. 45, No. 9, Sep. 19987, pp. 1960-1971, Sep. 1998.Applicant
Evert Seevinck et al., “Static-Noise Margin Analysis of MOS SRAM Cells” 1987 IEEE, IEEE Journals of Solid-State Circuits, vol. SC-22, No. 5, Oct. 1987.Applicant
Yang-Kyu Choi et al. “Sub-20nm CMOS FinFET Technologies”, IEEE 2001, IEDM 01-421 to 01-424.Applicant
M. Ieong et al. “Three Dimensional CMOS Devices and Integrated Circuits”, IEEE 2003, CICC, San Jose, CA, Sep. 21-24, 2003, pp. 207-214.Applicant
E.J. Nowak et al., “Scaling Beyond the 65nm Node with FinFET-DGCMOS”, IEEE 2003, CICC, San Jose, CA, Sep. 21-24, 2003, pp. 339-342.Applicant
E.C. Jones, “Doping Challenges in Exploratory Devices for High Performance Logic”, 14th International Conference, Piscataway, NJ, Sep. 22-27, 2002, pp. 1-6.Applicant
T. Park et al. “PMOS Body-Tied FinFET (Omega MOSFET) Characteristics”, Device Research Conference, Piscataway, NJ, Jun. 23-25, 2003, IEEE, pp. 33-34.Applicant
E.J. Nowak et al., “A Functional FinFET-DGCMOS SRAM Cell”, International Electron Devices Meeting 2002, San Francisco, CA, Dec. 8-11, 2002, pp. 411-414.Applicant
Jae-Hyoun Park, “Quantum-wired MOSFET Photodetector Fabricated by Conventional Photolithography on SOI Substrate”, Nanotechnology, 2004, 4th IEEE Conference on Munich, Germany, Aug. 16-19, 2004, Piscataway, NJ, pp. 425-427, XP010767302.Applicant
L. Chang et al. “CMOS Circuit Performance Enhancement by Surface Orientation Optimization” IEEE Transactions on Electron Devices, IEEE Service Center, Piscataway, NJ vol. 51, No. 10, Oct. 2004, pp. 1621-1627 XP001211140.Applicant
M. Stadele et al., “A Comprehensive Study of Corner Effects in Tri-gate Transistors”, IEEE 2004, pp. 165-168.Applicant
Ali Javey et al., “Ballistic Carbon Nanotube Field-Effect Transistors”, Nature, vol. 424, Aug. 7, 2003, pp. 654-657.Applicant
Lide, David R. “Properties of Semiconductors” CRC Handbook of Chemistry and Physics, internet version 2007, (87th edition), David R. Lide—Editor; Taylor and Francis, pp. 12-77-12-89.Applicant
T. M. Mayer, et al., “Chemical Vapor Deposition of Fluoroalkylsilane Monolayer Films for Adhesion Control in Microelectromechanical Systems” 2000 American Vacuum Society B 18(5), Sep.-Oct. 2000, pp. 2433-2440.Applicant
R. Chau et al., Advanced Depleted-Substrate Transistors: Single-Gate, Double-Gate and Tri-gate (Invited Paper), Components Research, Logic Technology Development, Intel Corporation, Hillsboro OR, 2 pages.Applicant
Intel Notice of Allowance for 11/064,996 mailed Dec. 1, 2008.Applicant
Intel Office Action for 11/064,996 mailed Jun. 27, 2008.Applicant
Intel Office Action for 11/064,996 mailed Mar. 14, 2008.Applicant
Intel Office Action for 11/064,996 mailed Sep. 4, 2007.Applicant
Intel Office Action for 11/064,996 mailed Mar. 13, 2007.Applicant
Intel Notice of Allowance for 12/343,400 mailed Jun. 28, 2010.Applicant
Intel Office Action for 12/343,400 mailed Dec. 30, 2009.Applicant
Intel Notice of Allowance for 12/850,582 mailed Oct. 15, 2010.Applicant
Breed, A., et al., “Dual-gate (FinFET) and tri-gate MOSFETs: simulation and design”, Semiconductor Device Research Symposium, 2003 International, Dec. 10-12, 2003, pp. 150-151.Applicant
Buchanan, D. A., et al., “Fabrication of Midgap Metal Gates Compatible with Ultrathin Dielectrics,” Applied Physics Letters, 73.12, (Sep. 21, 1998), pp. 1676-1678.Applicant
Claflin, B., et al., “Interface Studies of Tungsten Nitride and Titanium Nitride Composite Metal Gate Electrodes with Thin Dielectric Layers,” Journal of Vacuum Science and Technology A 16.3, (May/Jun. 1998), pp. 1757-1761.Applicant
Collaert, N. et al. “A Functional 41-Stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node” IEEE Electron Device Letters, vol. 254, No. 8 (Aug. 2004), pp. 568-570.Applicant
Hwang, Jeong-Mo et al., “Novel Polysilicon/Tin Stacked-Gate Structure for Fully-Depleted SOI/CMOS,” International Electronic Devices Meeting Technical Digest, (1992), pp. 345-348.Applicant
Nackaerts et al., “A 0.314γm2 6T-SRAM Cell build with Tall Triple-Gate Devices for 45nm node applications using 0.75NA 193nm lithography,” IDEM, (Dec. 13, 2004), pp. 269-272.Applicant
Nowak, Edward J. et al., “Turning Silicon on its Edge . . . ,” IEEE Circuits & Devices Magazine, vol. 1, (Jan./Feb. 2004), pp. 20-31.Applicant
Park, Donggun et al., “3-Dimensional nano-CMOS Transistors to Overcome Scaling Limits,” IEEE 2004, ISBN 0-7803-8511-X, (Oct. 18, 2004), pp. 35-40.Applicant
Park, Jong-Tae, et al., “Pi-Gate SOI MOSFET”. IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 405-406.Applicant
Sugizaki, T. et al., “Novel Multi-bit SONOS Type Flash Memory Using a High-k Charge Trapping Layer,” VLSI Technology, 2003, Digest of Technical Papers, Symposium on, Jun. 10-12, 2003, pp. 27-28.Applicant
Tang, Stephen H. et al., “FinFET—A quasi-planar double-gate MOSFET”, 2001 IEEE International Solid-State Circuits Conference (Feb. 6, 2001), pp. 1-3.Applicant
Tokoro, Kenji et al., “Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions,” International Symposium on Micromechatronics and Human Science, IEEE (1998), pp. 65-70.Applicant
Wolf, Stanley et al., “Wet Etching Silicon,” Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, (Sep. 1986), (3 pgs.).Applicant
Wang, X. , et al., “Band alignments in sidewall strained Si/strained SiGe heterostructures”, (May 28, 2002), 1-5.Applicant
Yang, Fu-Liang et al., “25nm CMOS Omega FETs” IEEE 2002, 10.3.1-10-.3.4, pp. 255-258.Applicant

Abstract

Description

Background of the Invention

[0002] 1. Field of the Invention

[0004] 2. Discussion of Related Art

Brief Description of the Drawings

[0007] FIG. 1 is an illustration of a cross-sectional view of a standard MOS nonplanar field effect transistor.

[0010] FIG. 4 is a plot showing the electron mobility verses sheet carrier concentration for indium antimonide (InSb).

[0011] FIG. 5 is an illustration of a nonplanar transistor having a pair of source/drains formed from a narrow bandgap semiconductor.

[0012] FIG. 6 illustrates a system in accordance with one embodiment.

Detailed Description of the Present Invention

[0040] This completes the fabrication of a field effect transistor having source and drain regions formed from a narrow bandgap semiconductor.

Claims

We claim:

1. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

wherein the semiconductor film is either:

doped to an n type conductivity with a dopant selected from the group consisting of tellurium (Te), silicon (Si) and sulfur (S); or

doped to a p type conductivity with a dopant selected from the group consisting of carbon (C), cadmium (Cd), zinc (Zn) and chromium (Cr).

3. The transistor of claim 1 wherein the semiconductor film is indium phosphide (InP).

4. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer;

a pair of non-alloyed contacts on the doped semiconductor film.

5. The transistor of claim 4 wherein the non-alloyed contacts comprise a bi-layer of titanium/gold.

7. The transistor of claim 1 wherein the semiconductor film is doped to the n type conductivity with a dopant selected from the group consisting of tellurium (Te), silicon (Si) and sulfur (S).

8. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

9. A transistor comprising:

a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

a gate electrode formed on the gate dielectric layer; and

10. The transistor of claim 4 wherein the semiconductor film is indium phosphide (InP).

12. The transistor of claim 3 further comprising a pair of non-alloyed contacts on the indium phosphide (InP) film.

13. The transistor of claim 12 wherein the non-alloyed contacts comprise a bi-layer of titanium/gold.

14. The transistor of claim 4 wherein the semiconductor film is doped to an n type conductivity.

17. The transistor of claim 4 wherein the semiconductor film is doped to a p type conductivity.

Patent Citations (623)

Patent	Date	Inventor	Cited By
US3387820(A)	1968-06-01	Sanderfer et al.	Applicant
US4231149(A)	1980-11-01	Chapman et al.	Applicant
US4487652(A)	1984-12-01	Almgren	Applicant
US4711701(A)	1987-12-01	McLevige	Applicant
US4818715(A)	1989-04-01	Chao	Applicant
US4905063(A)	1990-02-01	Beltram et al.	Applicant
US4906589(A)	1990-03-01	Chao	Applicant
US4907048(A)	1990-03-01	Huang	Applicant
US4994873(A)	1991-02-01	Madan	Applicant
US4996574(A)	1991-02-01	Shirasaki et al.	Applicant
US5023203(A)	1991-06-01	Choi	Applicant
US5120666(A)	1992-06-01	Gotou	Applicant
US5124777(A)	1992-06-01	Lee	Applicant
US5179037(A)	1993-01-01	Seabaugh	Examiner
US5216271(A)	1993-06-01	Takagi et al.	Applicant
US5218213(A)	1993-06-01	Gaul et al.	Applicant
US5278012(A)	1994-01-01	Yamanaka et al.	Applicant
US5278102(A)	1994-01-01	Horie	Applicant
US5308999(A)	1994-05-01	Gotou	Applicant
US5328810(A)	1994-07-01	Lowrey et al.	Applicant
US5338959(A)	1994-08-01	Kim et al.	Applicant
US5346836(A)	1994-09-01	Manning et al.	Applicant
US5346839(A)	1994-09-01	Sundaresan	Applicant
US5357119(A)	1994-10-01	Wang et al.	Applicant
US5391506(A)	1995-02-01	Tada et al.	Applicant
US5398641(A)	1995-03-01	Shih	Applicant
US5428237(A)	1995-06-01	Yuzurihara et al.	Applicant
US5466621(A)	1995-11-01	Hisamoto et al.	Applicant
US5475869(A)	1995-12-01	Gomi et al.	Applicant
US5479033(A)	1995-12-01	Baca et al.	Applicant
US5482877(A)	1996-01-01	Rhee	Applicant
US5514885(A)	1996-05-01	Myrick	Applicant
US5521859(A)	1996-05-01	Ema et al.	Applicant
US5539229(A)	1996-07-01	Noble, Jr et al.	Applicant
US5543351(A)	1996-08-01	Hirai et al.	Applicant
US5545586(A)	1996-08-01	Koh	Applicant
US5554870(A)	1996-09-01	Fitch et al.	Applicant
US5563077(A)	1996-10-01	Ha et al.	Applicant
US5576227(A)	1996-11-01	Hsu	Applicant
US5578513(A)	1996-11-01	Maegawa	Applicant
US5595919(A)	1997-01-01	Pan	Applicant
US5595941(A)	1997-01-01	Okamoto et al.	Applicant
US5652454(A)	1997-07-01	Iwamatsu et al.	Applicant
US5658806(A)	1997-08-01	Lin et al.	Applicant
US5665203(A)	1997-09-01	Lee et al.	Applicant
US5682048(A)	1997-10-01	Shinohara et al.	Applicant
US5698869(A)	1997-12-01	Yoshimi et al.	Examiner
US5701016(A)	1997-12-01	Burroughes et al.	Applicant
US5716879(A)	1998-02-01	Choi et al.	Applicant
US5739544(A)	1998-04-01	Yuki et al.	Applicant
US5760442(A)	1998-06-01	Shigyo et al.	Applicant
US5770513(A)	1998-06-01	Okaniwa	Examiner
US5773331(A)	1998-06-01	Solomon et al.	Applicant
US5776821(A)	1998-07-01	Haskell et al.	Applicant
US5793088(A)	1998-08-01	Choi et al.	Applicant
US5804848(A)	1998-09-01	Mukai	Applicant
US5811324(A)	1998-09-01	Yang	Applicant
US5814545(A)	1998-09-01	Seddon et al.	Applicant
US5814895(A)	1998-09-01	Hirayama	Applicant
US5821629(A)	1998-10-01	Wen et al.	Applicant
US5827769(A)	1998-10-01	Aminzadeh et al.	Applicant
US5844278(A)	1998-12-01	Mizuno et al.	Applicant
US5856225(A)	1999-01-01	Lee et al.	Applicant
US5859456(A)	1999-01-01	Efland et al.	Applicant
US5880015(A)	1999-03-01	Hata	Applicant
US5888309(A)	1999-03-01	Yu	Applicant
US5889304(A)	1999-03-01	Watanabe et al.	Applicant
US5899710(A)	1999-05-01	Mukai	Applicant
US5905285(A)	1999-05-01	Gardner et al.	Applicant
US5908313(A)	1999-06-01	Chau et al.	Applicant
US5952701(A)	1999-09-01	Bulucea et al.	Applicant
US5965914(A)	1999-10-01	Miyamoto	Applicant
US5976767(A)	1999-11-01	Li	Applicant
US5985726(A)	1999-11-01	Yu et al.	Applicant
US6013926(A)	2000-01-01	Oku et al.	Applicant
US6018176(A)	2000-01-01	Lim	Applicant
US6031249(A)	2000-02-01	Yamazaki et al.	Applicant
US6051452(A)	2000-04-01	Shigyo et al.	Applicant
US6054355(A)	2000-04-01	Inumiya et al.	Applicant
US6063675(A)	2000-05-01	Rodder	Applicant
US6063677(A)	2000-05-01	Rodder et al.	Applicant
US6066869(A)	2000-05-01	Noble et al.	Applicant
US6087208(A)	2000-07-01	Krivokapic et al.	Applicant
US6093621(A)	2000-07-01	Tseng	Applicant
US6114201(A)	2000-09-01	Wu	Applicant
US6114206(A)	2000-09-01	Yu	Applicant
US6117741(A)	2000-09-01	Chatterjee et al.	Applicant
US6120846(A)	2000-09-01	Hintermaier et al.	Applicant
US6130123(A)	2000-10-01	Liang et al.	Applicant
US6144072(A)	2000-11-01	Iwamatsu et al.	Applicant
US6150222(A)	2000-11-01	Gardner et al.	Applicant
US6153485(A)	2000-11-01	Pey et al.	Applicant
US6159808(A)	2000-12-01	Chuang	Applicant
US6163053(A)	2000-12-01	Kawashima	Applicant
US6165880(A)	2000-12-01	Yaung et al.	Applicant
US6174820(B1)	2001-01-01	Habermehl et al.	Applicant
US6190975(B1)	2001-02-01	Kubo et al.	Applicant
US6200865(B1)	2001-03-01	Gardner et al.	Applicant
US6218309(B1)	2001-04-01	Miller et al.	Applicant
US6251729(B1)	2001-06-01	Montree et al.	Applicant
US6251751(B1)	2001-06-01	Chu et al.	Applicant
US6251763(B1)	2001-06-01	Inumiya et al.	Applicant
US6252284(B1)	2001-06-01	Muller et al.	Applicant
US6259135(B1)	2001-07-01	Hsu et al.	Applicant
US6261921(B1)	2001-07-01	Yen et al.	Applicant
US6262456(B1)	2001-07-01	Yu et al.	Applicant
US6274503(B1)	2001-08-01	Hsieh	Applicant
US6287924(B1)	2001-09-01	Chao et al.	Applicant
US6294416(B1)	2001-09-01	Wu	Applicant
US6307235(B1)	2001-10-01	Forbes et al.	Applicant
US6310367(B1)	2001-10-01	Yagishita et al.	Applicant
US6317444(B1)	2001-11-01	Chakrabarti et al.	Applicant
US6319807(B1)	2001-11-01	Yeh et al.	Applicant
US6335251(B2)	2002-01-01	Miyano et al.	Applicant
US6358800(B1)	2002-03-01	Tseng	Applicant
US6359311(B1)	2002-03-01	Colinge et al.	Applicant
US6362111(B1)	2002-03-01	Laaksonen et al.	Applicant
US6368923(B1)	2002-04-01	Huang	Applicant
US6376317(B1)	2002-04-01	Forbes et al.	Applicant
US6383882(B1)	2002-05-01	Lee	Applicant
US6387820(B1)	2002-05-01	Sanderfer	Applicant
US6391782(B1)	2002-05-01	Yu	Applicant
US6396108(B1)	2002-05-01	Krivokapic et al.	Applicant
US6399970(B2)	2002-06-01	Kubo et al.	Applicant
US6403434(B1)	2002-06-01	Yu	Applicant
US6403981(B1)	2002-06-01	Yu	Applicant
US6407442(B2)	2002-06-01	Inoue et al.	Applicant
US6410371(B1)	2002-06-01	Yu et al.	Applicant
US6413802(B1)	2002-07-01	Hu et al.	Applicant
US6413877(B1)	2002-07-01	Annapragada	Applicant
US6424015(B1)	2002-07-01	Ishibashi et al.	Applicant
US6437550(B2)	2002-08-01	Andoh et al.	Applicant
US6457890(B1)	2002-10-01	Kohlruss et al.	Applicant
US6458662(B1)	2002-10-01	Yu	Applicant
US6459123(B1)	2002-10-01	Enders et al.	Applicant
US6465290(B1)	2002-10-01	Suguro et al.	Applicant
US6466621(B1)	2002-10-01	Hisamoto et al.	Applicant
US6472258(B1)	2002-10-01	Adkisson et al.	Applicant
US6475869(B1)	2002-11-01	Yu	Applicant
US6475890(B1)	2002-11-01	Yu	Applicant
US6479866(B1)	2002-11-01	Xiang	Applicant
US6483146(B2)	2002-11-01	Lee	Applicant
US6483151(B2)	2002-11-01	Wakabayashi et al.	Applicant
US6483156(B1)	2002-11-01	Adkisson et al.	Applicant
US6495403(B1)	2002-12-01	Skotnicki et al.	Applicant
US6498096(B2)	2002-12-01	Bruce et al.	Applicant
US6500767(B2)	2002-12-01	Chiou et al.	Applicant
US6501141(B1)	2002-12-01	Leu	Applicant
US6506692(B2)	2003-01-01	Andideh	Applicant
US6515339(B2)	2003-02-01	Shin et al.	Applicant
US6525403(B2)	2003-02-01	Inaba et al.	Applicant
US6526996(B1)	2003-03-01	Chang et al.	Applicant
US6534807(B2)	2003-03-01	Mandelman et al.	Applicant
US6537862(B2)	2003-03-01	Song	Applicant
US6537885(B1)	2003-03-01	Kang et al.	Applicant
US6537901(B2)	2003-03-01	Cha et al.	Applicant
US6541829(B2)	2003-04-01	Nishinohara et al.	Applicant
US6555879(B1)	2003-04-01	Krivokapic et al.	Applicant
US6562665(B1)	2003-05-01	Yu	Applicant
US6562687(B1)	2003-05-01	Deleonibus et al.	Applicant
US6566734(B2)	2003-05-01	Sugihara et al.	Applicant
US6583469(B1)	2003-06-01	Fried et al.	Applicant
US6605498(B1)	2003-08-01	Murthy et al.	Applicant
US6610576(B2)	2003-08-01	Nowak	Applicant
US6611029(B1)	2003-08-01	Ahmed et al.	Applicant
US6630388(B2)	2003-10-01	Sekigawa et al.	Applicant
US6635909(B2)	2003-10-01	Clark et al.	Applicant
US6642090(B1)	2003-11-01	Fried et al.	Applicant
US6642114(B2)	2003-11-01	Nakamura	Applicant
US6645797(B1)	2003-11-01	Buynoski et al.	Applicant
US6645826(B2)	2003-11-01	Yamazaki et al.	Applicant
US6645861(B2)	2003-11-01	Cabral et al.	Applicant
US6656853(B2)	2003-12-01	Ito	Applicant
US6657259(B2)	2003-12-01	Fried et al.	Applicant
US6660598(B2)	2003-12-01	Hanafi et al.	Applicant
US6664160(B2)	2003-12-01	Park et al.	Applicant
US6680240(B1)	2004-01-01	Maszara	Applicant
US6686231(B1)	2004-02-01	Ahmed et al.	Applicant
US6689650(B2)	2004-02-01	Gambino et al.	Applicant
US6693324(B2)	2004-02-01	Maegawa et al.	Applicant
US6696366(B1)	2004-02-01	Flanner et al.	Applicant
US6705571(B2)	2004-03-01	Shay et al.	Applicant
US6706571(B1)	2004-03-01	Yu et al.	Applicant
US6709982(B1)	2004-03-01	Buynoski et al.	Applicant
US6713396(B2)	2004-03-01	Anthony	Applicant
US6716684(B1)	2004-04-01	Krivokapic et al.	Applicant
US6716686(B1)	2004-04-01	Buynoski et al.	Applicant
US6716690(B1)	2004-04-01	Wang et al.	Applicant
US6730964(B2)	2004-05-01	Horiuchi	Applicant
US6744103(B2)	2004-06-01	Snyder	Applicant
US6756657(B1)	2004-06-01	Zhang et al.	Applicant
US6762469(B2)	2004-07-01	Mocuta et al.	Applicant
US6764884(B1)	2004-07-01	Yu et al.	Applicant
US6765303(B1)	2004-07-01	Krivokapic et al.	Applicant
US6770516(B2)	2004-08-01	Wu et al.	Applicant
US6774390(B2)	2004-08-01	Sugiyama et al.	Applicant
US6780694(B2)	2004-08-01	Doris et al.	Applicant
US6784071(B2)	2004-08-01	Chen et al.	Applicant
US6784076(B2)	2004-08-01	Gonzalez et al.	Applicant
US6787402(B1)	2004-09-01	Yu	Applicant
US6787406(B1)	2004-09-01	Hill et al.	Applicant
US6787439(B2)	2004-09-01	Ahmed et al.	Applicant
US6787845(B2)	2004-09-01	Deleonibus	Applicant
US6787854(B1)	2004-09-01	Yang et al.	Applicant
US6790733(B1)	2004-09-01	Natzle et al.	Applicant
US6794313(B1)	2004-09-01	Chang	Applicant
US6794718(B2)	2004-09-01	Nowak et al.	Applicant
US6798000(B2)	2004-09-01	Luyken et al.	Applicant
US6800885(B1)	2004-10-01	An et al.	Applicant
US6800910(B2)	2004-10-01	Lin et al.	Applicant
US6803631(B2)	2004-10-01	Dakshina-Murthy et al.	Applicant
US6812075(B2)	2004-11-01	Fried et al.	Applicant
US6812111(B2)	2004-11-01	Cheong et al.	Applicant
US6815277(B2)	2004-11-01	Fried et al.	Applicant
US6821834(B2)	2004-11-01	Ando	Applicant
US6825506(B2)	2004-11-01	Chau et al.	Applicant
US6830998(B1)	2004-12-01	Pan et al.	Applicant
US6831310(B1)	2004-12-01	Mathew et al.	Applicant
US6833588(B2)	2004-12-01	Yu et al.	Applicant
US6835614(B2)	2004-12-01	Hanafi et al.	Applicant
US6835618(B1)	2004-12-01	Dakshina-Murthy et al.	Applicant
US6838322(B2)	2005-01-01	Pham et al.	Applicant
US6844238(B2)	2005-01-01	Yeo et al.	Applicant
US6849556(B2)	2005-02-01	Takahashi	Applicant
US6849884(B2)	2005-02-01	Clark et al.	Applicant
US6852559(B2)	2005-02-01	Kwak et al.	Applicant
US6855588(B1)	2005-02-01	Liao et al.	Applicant
US6855606(B2)	2005-02-01	Chen et al.	Applicant
US6855990(B2)	2005-02-01	Yeo et al.	Applicant
US6858472(B2)	2005-02-01	Schoenfeld	Applicant
US6858478(B2)	2005-02-01	Chau et al.	Applicant
US6864519(B2)	2005-03-01	Yeo et al.	Applicant
US6864540(B1)	2005-03-01	Divakaruni et al.	Applicant
US6867433(B2)	2005-03-01	Yeo et al.	Applicant
US6867460(B1)	2005-03-01	Anderson et al.	Applicant
US6869868(B2)	2005-03-01	Chiu et al.	Applicant
US6869898(B2)	2005-03-01	Inaki et al.	Applicant
US6870226(B2)	2005-03-01	Maeda et al.	Applicant
US6881635(B1)	2005-04-01	Chidambarrao et al.	Applicant
US6884154(B2)	2005-04-01	Mizushima et al.	Applicant
US6885055(B2)	2005-04-01	Lee	Applicant
US6888199(B2)	2005-05-01	Nowak et al.	Applicant
US6890811(B2)	2005-05-01	Hou et al.	Applicant
US6891234(B1)	2005-05-01	Connelly et al.	Applicant
US6897527(B2)	2005-05-01	Dakshina-Murthy et al.	Applicant
US6902947(B2)	2005-06-01	Chinn et al.	Applicant
US6902962(B2)	2005-06-01	Yeo et al.	Applicant
US6909147(B2)	2005-06-01	Aller et al.	Applicant
US6909151(B2)	2005-06-01	Hareland et al.	Applicant
US6919238(B2)	2005-07-01	Bohr	Applicant
US6921691(B1)	2005-07-01	Li et al.	Applicant
US6921702(B2)	2005-07-01	Ahn et al.	Applicant
US6921963(B2)	2005-07-01	Krivokapic et al.	Applicant
US6921982(B2)	2005-07-01	Joshi et al.	Applicant
US6924190(B2)	2005-08-01	Dennison	Applicant
US6946377(B2)	2005-09-01	Chambers	Applicant
US6949433(B1)	2005-09-01	Hidehiko et al.	Applicant
US6955961(B1)	2005-10-01	Chung	Applicant
US6955969(B2)	2005-10-01	Djomehri et al.	Applicant
US6956281(B2)	2005-10-01	Smith et al.	Applicant
US6960517(B2)	2005-11-01	Rios et al.	Applicant
US6967351(B2)	2005-11-01	Fried et al.	Applicant
US6969878(B2)	2005-11-01	Coronel et al.	Applicant
US6970373(B2)	2005-11-01	Datta et al.	Applicant
US6974738(B2)	2005-12-01	Hareland et al.	Applicant
US6975014(B1)	2005-12-01	Krivokapic et al.	Applicant
US6977415(B2)	2005-12-01	Matsuo	Applicant
US6982433(B2)	2006-01-01	Hoffman et al.	Applicant
US6997415(B2)	2006-02-01	Wozniak et al.	Applicant
US6998301(B1)	2006-02-01	Yu et al.	Applicant
US6998318(B2)	2006-02-01	Park	Applicant
US7005366(B2)	2006-02-01	Chau et al.	Applicant
US7013447(B2)	2006-03-01	Mathew et al.	Applicant
US7018551(B2)	2006-03-01	Beintner et al.	Applicant
US7045401(B2)	2006-05-01	Lee et al.	Applicant
US7045407(B2)	2006-05-01	Keating et al.	Applicant
US7045441(B2)	2006-05-01	Chang et al.	Applicant
US7045451(B2)	2006-05-01	Shenai-Khatkhate et al.	Applicant
US7049654(B2)	2006-05-01	Chang	Applicant
US7056794(B2)	2006-06-01	Ku et al.	Applicant
US7060539(B2)	2006-06-01	Chidambarrao et al.	Applicant
US7061055(B2)	2006-06-01	Sekigawa et al.	Applicant
US7071064(B2)	2006-07-01	Doyle et al.	Applicant
US7074623(B2)	2006-07-01	Lochtefeld et al.	Applicant
US7074656(B2)	2006-07-01	Yeo et al.	Applicant
US7074662(B2)	2006-07-01	Lee et al.	Applicant
US7084018(B1)	2006-08-01	Ahmed et al.	Applicant
US7105390(B2)	2006-09-01	Brask et al.	Applicant
US7105891(B2)	2006-09-01	Visokay et al.	Applicant
US7105894(B2)	2006-09-01	Yeo et al.	Applicant
US7105934(B2)	2006-09-01	Anderson et al.	Applicant
US7112478(B2)	2006-09-01	Grupp et al.	Applicant
US7115945(B2)	2006-10-01	Lee et al.	Applicant
US7115954(B2)	2006-10-01	Shimizu et al.	Applicant
US7119402(B2)	2006-10-01	Kinoshita et al.	Applicant
US7122463(B2)	2006-10-01	Ohuchi	Applicant
US7132360(B2)	2006-11-01	Schaeffer et al.	Applicant
US7138320(B2)	2006-11-01	Bentum et al.	Applicant
US7141480(B2)	2006-11-01	Adam et al.	Applicant
US7141856(B2)	2006-11-01	Lee et al.	Applicant
US7154118(B2)	2006-12-01	Lindert et al.	Applicant
US7163851(B2)	2007-01-01	Abadeer et al.	Applicant
US7163898(B2)	2007-01-01	Mariani et al.	Applicant
US7172943(B2)	2007-02-01	Yeo et al.	Applicant
US7183137(B2)	2007-02-01	Lee et al.	Applicant
US7187043(B2)	2007-03-01	Arai et al.	Applicant
US7196372(B1)	2007-03-01	Yu et al.	Applicant
US7214991(B2)	2007-05-01	Yeo et al.	Applicant
US7238564(B2)	2007-07-01	Ko et al.	Applicant
US7241653(B2)	2007-07-01	Hareland et al.	Applicant
US7247547(B2)	2007-07-01	Zhu et al.	Applicant
US7247578(B2)	2007-07-01	Brask	Applicant
US7250367(B2)	2007-07-01	Vaartstra et al.	Applicant
US7250645(B1)	2007-07-01	Wang et al.	Applicant
US7250655(B2)	2007-07-01	Bae et al.	Applicant
US7256455(B2)	2007-08-01	Ahmed et al.	Applicant
US7268024(B2)	2007-09-01	Yeo et al.	Applicant
US7268058(B2)	2007-09-01	Chau et al.	Applicant
US7291886(B2)	2007-11-01	Doris et al.	Applicant
US7297600(B2)	2007-11-01	Oh et al.	Applicant
US7304336(B2)	2007-12-01	Cheng et al.	Applicant
US7323710(B2)	2008-01-01	Kim et al.	Applicant
US7326634(B2)	2008-02-01	Lindert et al.	Applicant
US7329913(B2)	2008-02-01	Brask et al.	Applicant
US7339241(B2)	2008-03-01	Orlowski et al.	Applicant
US7341902(B2)	2008-03-01	Anderson et al.	Applicant
US7348284(B2)	2008-03-01	Doyle et al.	Applicant
US7348642(B2)	2008-03-01	Nowak	Applicant
US7354817(B2)	2008-04-01	Watanabe et al.	Applicant
US7358121(B2)	2008-04-01	Chau et al.	Applicant
US7385262(B2)	2008-06-01	O'Keeffe et al.	Applicant
US7388259(B2)	2008-06-01	Doris et al.	Applicant
US7396730(B2)	2008-07-01	Li	Applicant
US7439120(B2)	2008-10-01	Pei	Applicant
US7452778(B2)	2008-11-01	Chen et al.	Applicant
US7456471(B2)	2008-11-01	Anderson et al.	Applicant
US7456476(B2)	2008-11-01	Hareland et al.	Applicant
US7479421(B2)	2009-01-01	Kavalieros et al.	Applicant
US7585734(B2)	2009-09-01	Kang et al.	Applicant
US7612416(B2)	2009-11-01	Takeuchi et al.	Applicant
US7655989(B2)	2010-02-01	Zhu et al.	Applicant
US7701018(B2)	2010-04-01	Yamagami et al.	Applicant
US2001/0019886(A1)	2001-09-01	Bruce et al.	Applicant
US2001/0026985(A1)	2001-10-01	Kim et al.	Applicant
US2001/0040907(A1)	2001-11-01	Chakrabarti	Examiner
US2002/0011612(A1)	2002-01-01	Hieda	Applicant
US2002/0036290(A1)	2002-03-01	Inaba et al.	Applicant
US2002/0037619(A1)	2002-03-01	Sugihara et al.	Applicant
US2002/0048918(A1)	2002-04-01	Grider et al.	Applicant
US2002/0058374(A1)	2002-05-01	Kim et al.	Applicant
US2002/0074614(A1)	2002-06-01	Furuta et al.	Applicant
US2002/0081794(A1)	2002-06-01	Ito	Applicant
US2002/0096724(A1)	2002-07-01	Liang et al.	Applicant
US2002/0142529(A1)	2002-10-01	Matsuda et al.	Applicant
US2002/0149031(A1)	2002-10-01	Kim et al.	Applicant
US2002/0160553(A1)	2002-10-01	Yamanaka et al.	Applicant
US2002/0166838(A1)	2002-11-01	Nagarajan	Applicant
US2002/0167007(A1)	2002-11-01	Yamazaki et al.	Applicant
US2002/0177263(A1)	2002-11-01	Hanafi et al.	Applicant
US2002/0177282(A1)	2002-11-01	Song	Applicant
US2003/0036290(A1)	2003-02-01	Hsieh et al.	Applicant
US2003/0042542(A1)	2003-03-01	Maegawa et al.	Applicant
US2003/0057477(A1)	2003-03-01	Hergenrother et al.	Applicant
US2003/0057486(A1)	2003-03-01	Gambino	Applicant
US2003/0067017(A1)	2003-04-01	Ieong et al.	Applicant
US2003/0085194(A1)	2003-05-01	Hopkins, Jr.	Applicant
US2003/0098479(A1)	2003-05-01	Murthy et al.	Applicant
US2003/0098488(A1)	2003-05-01	O'Keeffe et al.	Applicant
US2003/0102497(A1)	2003-06-01	Fried et al.	Applicant
US2003/0102518(A1)	2003-06-01	Fried et al.	Applicant
US2003/0111686(A1)	2003-06-01	Nowak	Applicant
US2003/0122186(A1)	2003-07-01	Sekigawa et al.	Applicant
US2003/0143791(A1)	2003-07-01	Cheong et al.	Applicant
US2003/0151077(A1)	2003-08-01	Mathew et al.	Applicant
US2003/0174534(A1)	2003-09-01	Clark et al.	Applicant
US2003/0186167(A1)	2003-10-01	Johnson Jr et al.	Applicant
US2003/0190766(A1)	2003-10-01	Gonzalez et al.	Applicant
US2003/0201458(A1)	2003-10-01	Clark et al.	Applicant
US2003/0203636(A1)	2003-10-01	Hieda	Applicant
US2003/0227036(A1)	2003-12-01	Sugiyama et al.	Applicant
US2004/0011910(A1)	2004-01-01	Nowak et al.	Applicant
US2004/0016968(A1)	2004-01-01	Coronel et al.	Applicant
US2004/0029323(A1)	2004-02-01	Shimizu et al.	Applicant
US2004/0029345(A1)	2004-02-01	Deleonibus et al.	Applicant
US2004/0029393(A1)	2004-02-01	Ying et al.	Applicant
US2004/0031979(A1)	2004-02-01	Lochtefeld et al.	Applicant
US2004/0033639(A1)	2004-02-01	Chinn et al.	Applicant
US2004/0036118(A1)	2004-02-01	Abadeer et al.	Applicant
US2004/0036126(A1)	2004-02-01	Chau et al.	Applicant
US2004/0036127(A1)	2004-02-01	Chau et al.	Applicant
US2004/0038436(A1)	2004-02-01	Mori et al.	Applicant
US2004/0038533(A1)	2004-02-01	Liang	Applicant
US2004/0061178(A1)	2004-04-01	Lin et al.	Applicant
US2004/0063286(A1)	2004-04-01	Kim et al.	Applicant
US2004/0070020(A1)	2004-04-01	Fujiwara et al.	Applicant
US2004/0075149(A1)	2004-04-01	Fitzgerald et al.	Applicant
US2004/0082125(A1)	2004-04-01	Hou et al.	Applicant
US2004/0092062(A1)	2004-05-01	Ahmed et al.	Applicant
US2004/0092067(A1)	2004-05-01	Hanafi et al.	Applicant
US2004/0094807(A1)	2004-05-01	Chau et al.	Applicant
US2004/0099903(A1)	2004-05-01	Yeo et al.	Applicant
US2004/0099966(A1)	2004-05-01	Chau et al.	Examiner
US2004/0108523(A1)	2004-06-01	Chen et al.	Applicant
US2004/0108558(A1)	2004-06-01	Kwak et al.	Applicant
US2004/0110097(A1)	2004-06-01	Ahmed et al.	Applicant
US2004/0110331(A1)	2004-06-01	Yeo et al.	Applicant
US2004/0113181(A1)	2004-06-01	Wicker	Applicant
US2004/0124492(A1)	2004-07-01	Matsuo	Applicant
US2004/0126975(A1)	2004-07-01	Ahmed et al.	Applicant
US2004/0132236(A1)	2004-07-01	Doris et al.	Applicant
US2004/0132567(A1)	2004-07-01	Schonnenbeck	Applicant
US2004/0145000(A1)	2004-07-01	An et al.	Applicant
US2004/0145019(A1)	2004-07-01	Dakshina-Murthy et al.	Applicant
US2004/0166642(A1)	2004-08-01	Chen et al.	Applicant
US2004/0169221(A1)	2004-09-01	Ko et al.	Applicant
US2004/0169269(A1)	2004-09-01	Yeo et al.	Applicant
US2004/0173815(A1)	2004-09-01	Yeo et al.	Applicant
US2004/0173846(A1)	2004-09-01	Hergenrother et al.	Applicant
US2004/0180491(A1)	2004-09-01	Arai et al.	Applicant
US2004/0191980(A1)	2004-09-01	Rios et al.	Applicant
US2004/0195624(A1)	2004-10-01	Liu et al.	Applicant
US2004/0197975(A1)	2004-10-01	Krivokapic et al.	Applicant
US2004/0198003(A1)	2004-10-01	Yeo et al.	Applicant
US2004/0203254(A1)	2004-10-01	Conley et al.	Applicant
US2004/0209463(A1)	2004-10-01	Kim et al.	Applicant
US2004/0217420(A1)	2004-11-01	Yeo et al.	Applicant
US2004/0219722(A1)	2004-11-01	Pham et al.	Applicant
US2004/0219780(A1)	2004-11-01	Ohuchi	Applicant
US2004/0222473(A1)	2004-11-01	Risaki	Applicant
US2004/0227187(A1)	2004-11-01	Cheng et al.	Applicant
US2004/0238887(A1)	2004-12-01	Nihey	Applicant
US2004/0238915(A1)	2004-12-01	Chen et al.	Applicant
US2004/0253792(A1)	2004-12-01	Cohen et al.	Applicant
US2004/0256647(A1)	2004-12-01	Lee et al.	Applicant
US2004/0262683(A1)	2004-12-01	Bohr et al.	Applicant
US2004/0262699(A1)	2004-12-01	Rios et al.	Applicant
US2004/0266076(A1)	2004-12-01	Doris et al.	Applicant
US2005/0017377(A1)	2005-01-01	Joshi et al.	Applicant
US2005/0019993(A1)	2005-01-01	Lee et al.	Applicant
US2005/0020020(A1)	2005-01-01	Collaert et al.	Applicant
US2005/0023633(A1)	2005-02-01	Yeo et al.	Applicant
US2005/0035391(A1)	2005-02-01	Lee et al.	Applicant
US2005/0035415(A1)	2005-02-01	Yeo et al.	Applicant
US2005/0040444(A1)	2005-02-01	Cohen	Applicant
US2005/0059214(A1)	2005-03-01	Cheng et al.	Applicant
US2005/0073060(A1)	2005-04-01	Datta et al.	Applicant
US2005/0093028(A1)	2005-05-01	Chambers	Applicant
US2005/0093067(A1)	2005-05-01	Yeo et al.	Applicant
US2005/0093075(A1)	2005-05-01	Bentum et al.	Applicant
US2005/0093154(A1)	2005-05-01	Kottantharayil et al.	Applicant
US2005/0104055(A1)	2005-05-01	Kwak et al.	Applicant
US2005/0104096(A1)	2005-05-01	Lee et al.	Applicant
US2005/0110082(A1)	2005-05-01	Cheng et al.	Applicant
US2005/0116218(A1)	2005-06-01	Yang	Applicant
US2005/0116289(A1)	2005-06-01	Boyd et al.	Applicant
US2005/0118790(A1)	2005-06-01	Lee et al.	Applicant
US2005/0127362(A1)	2005-06-01	Zhang et al.	Applicant
US2005/0127632(A1)	2005-06-01	Gehret	Applicant
US2005/0133829(A1)	2005-06-01	Kunii et al.	Applicant
US2005/0133866(A1)	2005-06-01	Chau et al.	Applicant
US2005/0136584(A1)	2005-06-01	Boyanov et al.	Applicant
US2005/0139860(A1)	2005-06-01	Snyder et al.	Applicant
US2005/0145894(A1)	2005-07-01	Chau et al.	Applicant
US2005/0145941(A1)	2005-07-01	Bedell et al.	Applicant
US2005/0145944(A1)	2005-07-01	Murthy et al.	Applicant
US2005/0148131(A1)	2005-07-01	Brask	Applicant
US2005/0148137(A1)	2005-07-01	Brask et al.	Applicant
US2005/0153494(A1)	2005-07-01	Ku et al.	Applicant
US2005/0156171(A1)	2005-07-01	Brask et al.	Applicant
US2005/0156202(A1)	2005-07-01	Rhee et al.	Applicant
US2005/0156227(A1)	2005-07-01	Jeng	Applicant
US2005/0161739(A1)	2005-07-01	Anderson et al.	Applicant
US2005/0162928(A1)	2005-07-01	Rosmeulen	Applicant
US2005/0167766(A1)	2005-08-01	Yagishita	Applicant
US2005/0170593(A1)	2005-08-01	Kang et al.	Applicant
US2005/0184316(A1)	2005-08-01	Kim et al.	Applicant
US2005/0189583(A1)	2005-09-01	Kim et al.	Applicant
US2005/0191795(A1)	2005-09-01	Chidambarrao et al.	Applicant
US2005/0199919(A1)	2005-09-01	Liu	Applicant
US2005/0202604(A1)	2005-09-01	Cheng et al.	Applicant
US2005/0215014(A1)	2005-09-01	Ahn et al.	Applicant
US2005/0215022(A1)	2005-09-01	Adam et al.	Applicant
US2005/0224797(A1)	2005-10-01	Ko et al.	Applicant
US2005/0224798(A1)	2005-10-01	Buss	Applicant
US2005/0224800(A1)	2005-10-01	Lindert	Applicant
US2005/0227498(A1)	2005-10-01	Furukawa et al.	Applicant
US2005/0230763(A1)	2005-10-01	Huang et al.	Applicant
US2005/0233156(A1)	2005-10-01	Senzaki et al.	Applicant
US2005/0239252(A1)	2005-10-01	Ahn et al.	Applicant
US2005/0255642(A1)	2005-11-01	Liu	Applicant
US2005/0266645(A1)	2005-12-01	Park	Applicant
US2005/0272192(A1)	2005-12-01	Oh et al.	Applicant
US2005/0277294(A1)	2005-12-01	Schaeffer et al.	Applicant
US2005/0280121(A1)	2005-12-01	Doris et al.	Applicant
US2006/0014338(A1)	2006-01-01	Doris et al.	Applicant
US2006/0040054(A1)	2006-02-01	Pearlstein et al.	Applicant
US2006/0043500(A1)	2006-03-01	Chen et al.	Applicant
US2006/0046521(A1)	2006-03-01	Vaartstra et al.	Applicant
US2006/0063469(A1)	2006-03-01	Talieh et al.	Applicant
US2006/0068590(A1)	2006-03-01	Lindert et al.	Applicant
US2006/0068591(A1)	2006-03-01	Radosavljevic et al.	Applicant
US2006/0071275(A1)	2006-04-01	Brask et al.	Applicant
US2006/0071299(A1)	2006-04-01	Doyle et al.	Applicant
US2006/0086977(A1)	2006-04-01	Shah et al.	Applicant
US2006/0138548(A1)	2006-06-01	Richards et al.	Applicant
US2006/0154478(A1)	2006-07-01	Hsu et al.	Applicant
US2006/0170066(A1)	2006-08-01	Mathew et al.	Applicant
US2006/0172479(A1)	2006-08-01	Furukawa et al.	Applicant
US2006/0172480(A1)	2006-08-01	Wang et al.	Applicant
US2006/0172497(A1)	2006-08-01	Hareland et al.	Applicant
US2006/0180859(A1)	2006-08-01	Radosavljevic et al.	Applicant
US2006/0202270(A1)	2006-09-01	Son et al.	Applicant
US2006/0204898(A1)	2006-09-01	Gutsche et al.	Applicant
US2006/0205164(A1)	2006-09-01	Ko et al.	Applicant
US2006/0211184(A1)	2006-09-01	Boyd et al.	Applicant
US2006/0220131(A1)	2006-10-01	Kinoshita et al.	Applicant
US2006/0227595(A1)	2006-10-01	Chuang et al.	Applicant
US2006/0240622(A1)	2006-10-01	Lee et al.	Applicant
US2006/0244066(A1)	2006-11-01	Yeo et al.	Applicant
US2006/0263699(A1)	2006-11-01	Abatchev et al.	Applicant
US2006/0281325(A1)	2006-12-01	Chou et al.	Applicant
US2006/0286729(A1)	2006-12-01	Kavalieros et al.	Applicant
US2007/0001219(A1)	2007-01-01	Radosavljevic et al.	Applicant
US2007/0023795(A1)	2007-02-01	Nagano et al.	Applicant
US2007/0029624(A1)	2007-02-01	Nowak	Applicant
US2007/0045735(A1)	2007-03-01	Orlowski et al.	Applicant
US2007/0045748(A1)	2007-03-01	Booth et al.	Applicant
US2007/0048930(A1)	2007-03-01	Figura et al.	Applicant
US2007/0052041(A1)	2007-03-01	Sorada et al.	Applicant
US2007/0069293(A1)	2007-03-01	Kavalieros et al.	Applicant
US2007/0093010(A1)	2007-04-01	Mathew et al.	Applicant
US2007/0108514(A1)	2007-05-01	Inoue et al.	Applicant
US2007/0145487(A1)	2007-06-01	Kavalieros et al.	Applicant
US2007/0187682(A1)	2007-08-01	Takeuchi et al.	Applicant
US2007/0241414(A1)	2007-10-01	Narihiro	Applicant
US2007/0259501(A1)	2007-11-01	Xiong et al.	Applicant
US2007/0262389(A1)	2007-11-01	Chau et al.	Applicant
US2008/0017890(A1)	2008-01-01	Yuan et al.	Applicant
US2008/0017934(A1)	2008-01-01	Kim et al.	Applicant
US2008/0111163(A1)	2008-05-01	Russ et al.	Applicant
US2008/0116515(A1)	2008-05-01	Gossner et al.	Applicant
US2008/0128796(A1)	2008-06-01	Zhu et al.	Applicant
US2008/0128797(A1)	2008-06-01	Dyer et al.	Applicant
US2008/0212392(A1)	2008-09-01	Bauer	Applicant
US2008/0237655(A1)	2008-10-01	Nakabayashi et al.	Applicant
US2008/0258207(A1)	2008-10-01	Radosavljevic et al.	Applicant
US2009/0061572(A1)	2009-03-01	Hareland et al.	Applicant
US2009/0090976(A1)	2009-04-01	Kavalieros et al.	Applicant
US2009/0099181(A1)	2009-04-01	Wurster et al.	Applicant
US2010/0200923(A1)	2010-08-01	Chen et al.	Applicant
DE10203998(A1)	2003-08-01		Applicant
EP510667	1992-10-01		Applicant
EP623963(A1)	1994-11-01		Applicant
EP1091413(A2)	2001-04-01		Applicant
EP1091413	2001-04-01		Applicant
EP1202335(A2)	2002-05-01		Applicant
EP1566844(A2)	2005-08-01		Applicant
GB2156149	1985-10-01		Applicant
JP56073454	1981-06-01		Applicant
JP56073454(A)	1981-06-01		Applicant
JP59145538(A)	1984-08-01		Applicant
JP2-303048(A)	1990-12-01		Applicant
JP6005856	1994-01-01		Applicant
JP6005856	1994-01-01		Applicant
JP6-061260	1994-03-01		Applicant
JP6-151387(A)	1994-05-01		Applicant
JP6151387	1994-05-01		Applicant
JP6177089	1994-06-01		Applicant
JP406177089(A)	1994-06-01		Applicant
JP6224440(A)	1994-08-01		Applicant
JP7-50421(A)	1995-02-01		Applicant
JP9-074205	1997-03-01		Applicant
JP9162301(A)	1997-06-01		Applicant
JP200037842(A)	2000-02-01		Applicant
JP2000037842	2000-02-01		Applicant
JP2001-189453	2001-07-01		Applicant
JP2001338987	2001-12-01		Applicant
JP2001338987	2001-12-01		Applicant
JP2002-298051	2002-10-01		Applicant
JP2002298051	2002-10-01		Applicant
JP2002-110977(A)	2002-12-01		Applicant
JP2003-229575	2003-08-01		Applicant
JP2003-298051	2003-10-01		Applicant
JP2004-221334(A)	2004-08-01		Applicant
JP2005-173606	2006-12-01		Applicant
KR100222363	1999-10-01		Applicant
TW200414538	1992-08-01		Applicant
TW200414538	1992-08-01		Applicant
TW200518310	1992-11-01		Applicant
TW200518310	1998-11-01		Applicant
TW508669	2002-11-01		Applicant
TW516232	2003-01-01		Applicant
TW546713	2003-08-01		Applicant
TW548799	2003-08-01		Applicant
TW561530	2003-11-01		Applicant
TW200402872(A)	2004-02-01		Applicant
TW200405408(A)	2004-04-01		Applicant
TW591798	2004-06-01		Applicant
TW594990	2004-06-01		Applicant
TW200414539	2004-08-01		Applicant
TW200417034	2004-09-01		Applicant
TW200417034	2004-09-01		Applicant
TWI223449	2004-11-01		Applicant
TWI231994	2005-05-01		Applicant
TWI238524	2005-08-01		Applicant
TWI239102	2005-09-01		Applicant
TW200729407	2007-08-01		Applicant
TWI321830	2010-03-01		Applicant
WO2/43151(A1)	2002-05-01		Applicant
WO2/095814	2002-11-01		Applicant
WO-02095814	2002-11-01		Applicant
WO3/003442	2003-01-01		Applicant
WO-03003442	2003-01-01		Applicant
WO2004/059726(A1)	2004-07-01		Applicant
WO2005/034212(A2)	2005-04-01		Applicant
WO2005/036651(A1)	2005-04-01		Applicant
WO-2005036651	2005-04-01		Applicant
WO2005/098963(A1)	2005-10-01		Applicant
WO2006/007350(A1)	2006-01-01		Applicant
WO2006/078469(A1)	2006-07-01		Applicant
WO2007/002426(A2)	2007-01-01		Applicant
WO2007/041152(A1)	2007-04-01		Applicant
WO-2007038575	2007-04-01		Applicant

Non-Patent Literature (91)

Buchanan, D. A., et al., Fabrication of Midgap Metal Gates Compatible With Ultrathin Dielectrics, Applied Physics Letters, vol. 73.12, Sep. 21, 1998, 3 pgs.Applicant

Claflin, B., et al., Interface Studies of Tungsten Nitride and Titanium Nitride Composite Metal Gate Electrodes With Thin Dielectric Layers, Journal of Vacuum Science and Technology A 16.3, May/Jun. 1998, 5 pgs.Applicant

Collaert, N., et al., a Functional 41-stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node, IEEE Electron Device Letters, vol. 25, No. 8, Aug. 2004, 3 pgs.Applicant

Hwang, Jeong-Mo, et al., Novel Polysilicon/Tin Stacked-Gate Structure for Fully-Depleted SOI/CMOS, International Electronic Devices Meeting Technical Digest, 1992, 4 pgs.Applicant

Nackaerts, et al., “A 0.314um2 6T-SRAM Cell build with Tall Triple-Gate Devices for 45nm node applications using 0.75NA 193nm lithography”, IEEE, 2004, 4 pgs.Applicant

Nowak, Edward J., et al., “Turning Silicon on its Edge”, IEEE Circuits & Devices Magazine vol. 1, Jan./Feb. 2004, 12 pgs.Applicant

Park, Donggun, et al., 3-dimensional nano-CMOS Transistors to Overcome Scaling Limits, IEEE 2004, ISBN 0-7803-8511-X, 6 pgs.Applicant

Subramanian, V., “A Bulk-Si-Compatible Ultrathin-body SOI Technology for Sub-100m MOSFETS”, Proceeding of the 57th Annual Device Research Conference, (1999), pp. 28-29.Applicant

Sugizaki, T., et al., Novel Multi-bit SONOS Type Flash Memory Using a High-k Charge Trapping Layer, VLSI Technology, 2003. Digest of Technical Papers. Symposium on 10-12, Jun. 2003, 2 pgs.Applicant

Tang, Stephen H., et al., FinFET—A Quasi-Planar Double-Gate MOSFET, IEEE International Solid-State Circuits Conference, Feb. 6, 2001, 3 pgs.Applicant

Tokoro, Kenji, et al., Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions, International Symposium on Micromechatronics and Human Science, IEEE, 1998, 6 pgs.Applicant

Wang, X., et al., “Band alignments in sidewall strained Si/strained SiGe heterostructures”, (May 28, 2002), 1-5.Applicant

Wolf, Stanley, et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sep. 1986, 3 pgs.Applicant

International Search Report PCT/US2003/026242.Applicant

International Search Report PCT/US2003/039727.Applicant

International Search Report PCT/US2003/040320.Applicant

International Search Report PCT/US2005/000947.Applicant

International Search Report PCT/US2005/010505.Applicant

International Search Report PCT/US2005/020339.Applicant

International Search Report PCT/US2005/033439.Applicant

International Search Report PCT/US2005/035380.Applicant

International Search Report PCT/US2004/032442.Applicant

International Search Report PCT/US2006/024516.Applicant

International Search Report and Written Opinion PCT/US2006/000378.Applicant

International Search Report PCT/US2006/037643.Applicant

International Search Report PCT/US2005/037169.Applicant

Sung Min Kim, et al., A Novel Multi-channel Field Effect Transistor (McFET) on Bulk Si for High Performance Sub-80nm Application, IEDM 04-639, 2004 IEEE, pp. 27.4.1-27.4.4.Applicant

Yang-Kyu Choi, et al., “A Spacer Patterning Technology for Nanoscale CMOS” IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002, pp. 436-441.Applicant

W. Xiong, et al., “Corner Effect in Multiple-Gate SOI MOSFETs” 2003 IEEE, pp. 111-113.Applicant

Weize Xiong, et al., “Improvement of FinFET Electrical Characteristics by Hydrogen Annealing” IEEE Electron Device Letters, vol. 25, No. 8, Aug. 2004, XP-001198998, pp. 541-543.Applicant

Fu-Liang Yang, et al., “5nm-Gate Nanowire FinFET” 2004 Symposium on VLSI Technology Digest of Technical Papers, 2004 IEEE, pp. 196-197.Applicant

Jing Guo et al. “Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors” Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3192-2194.Applicant

Ali Javey et al., “High-K Dielectrics for Advanced Carbon-Nanotube Transistors and Logic Gates”, Advance Online Publication, Published online, Nov. 17, 2002, pp. 1-6.Applicant

Richard Martel et al., “Carbon Nanotube Field Effect Transistors for Logic Applications” IBM, T.J. Watson Research Center, 2001 IEEE, IEDM 01, pp. 159-162.Applicant

David M. Fried et al., “Improved Independent Gate N-Type FinFET Fabrication and Characterization”, IEEE Electron Device Letters, vol. 24, No. 9, Sep. 2003, pp. 592-594.Applicant

David M. Fried et al., “Improved Independent Gate P-Type Independent-Gate FinFETs”, IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 199-201.Applicant

Charles Kuo et al. “A Capacitorless Double Gate DRAM Technology for Sub-100-nm Embedded and Stand-Alone Memory Applications, IEEE Transactions on Electron Devices”, vol. 50, No. 12, Dec. 2003, pp. 2408-2416.Applicant

Charles Kuo et al., “A Capacitorless Double-Gate DRAM Cell Design for High Density Applications”, 2002 IEEE International Electron Devices Meeting Technical Digest, Dec. 2002, pp. 843-846.Applicant

Takashi Ohsawa et al., “Memory Design Using a One-Transistor Gain Cell on SOI”, IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, pp. 1510-1522.Applicant

T. Tanaka et al., Scalability Study on a Capacitorless 1T-DRAM: From Single-Gate PD-SOI to Double-Gate FinDram, 2004 IEEE International Electron Devices Meeting Technical Digest, Dec. 2004, (4 pgs.).Applicant

V. Subramanian et al. “A Bulk Si-Compatible Ultrathin-Body SOI Technology for Sub-100nm MOSFETS”, Proceedings of the 57th Annual Device Reach Conference, (1999) pp. 28-29.Applicant

Hisamoto et al. “A Folded-Channel MOSFET for Deep-sub-tenth Micron Era”, 1998 IEEE International Electron Device Meeting Technical Digest, (1998) pp. 1032-1034.Applicant

Huang et al., “Sub 50nm FinFet: PMOS”, 1999 IEEE International Electron Device Meeting Technical Digets, (1999) pp. 67-70.Applicant

Auth et al., “Vertical, Fully-Depleted, Surroundings Gate MOSFETS on Sub 0.1um Thick Silicon Pillars”, 1996 54th Annual Device Research Conference Digest, (1996) pp. 108-109.Applicant

Hisamoto et al., “A Fully Depleted Lean-Channel Transistor (DELTA)-A Novel Vertical Ultrathin SOI MOSFET”, IEEE Electron Device Letters, vol. 11 No. 1, (1990) pp. 36-38.Applicant

Jong-Tae Park et al., “Pi-Gate SOI MOSFET” IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 405-406.Applicant

Digh Hisamoto et al., “FinFet-A Self Aligned Double-Gate MOSFET Scalable to 20nm”, IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.Applicant

T. Park et al., “Fabrication of Body-Tied FinFETs (Omega MOSFETS) Using Bulk Si Wafers”, 2003 Symposia on VLSI Technology Digest of Technical Papers, Jun. 2003, pp. 135-136.Applicant

A. Burenkov et al., “Corner Effect in Double and Triple Gate FinFets”, IEEE 2003, pp. 135-138, Sep. 2003.Applicant

S.T. Chang et al., “3-D Simulation of Strained Si/SiGe Heterojunction FinFETs”, pp. 176-177, Dec. 2003.Applicant

B. Jin et al., “Mobility Enhancement in Compressively Strained SiGe Surface Channel PMOS Transistors with Hf02/TiN Gate Stack”, Proceedings of the First Joint International Symposium, 206th Meeting of Electrochemical Society, Oct. 2004, pp. 111-122.Applicant

R. Chau, “Advanced Metal Gate/High-K Dielectric Stacks for High-Performance CMOS Transistors”, Proceedings of AVS 5th International Conference of Microelectronics and Interfaces, Mar. 2004, (3 pgs.).Applicant

T. Ludwig et al., “FinFET Technology for Future Microprocessors” 2003 IEEE, pp. 33-34, Oct. 2003.Applicant

Peter A. Stolk et al. “Modeling Statistical Dopant Fluctuations in MOS Transistors”, 1998 IEEE, IEEE Transactions on Electron Devices, vol. 45, No. 9, Sep. 19987, pp. 1960-1971, Sep. 1998.Applicant

Evert Seevinck et al., “Static-Noise Margin Analysis of MOS SRAM Cells” 1987 IEEE, IEEE Journals of Solid-State Circuits, vol. SC-22, No. 5, Oct. 1987.Applicant

Yang-Kyu Choi et al. “Sub-20nm CMOS FinFET Technologies”, IEEE 2001, IEDM 01-421 to 01-424.Applicant

M. Ieong et al. “Three Dimensional CMOS Devices and Integrated Circuits”, IEEE 2003, CICC, San Jose, CA, Sep. 21-24, 2003, pp. 207-214.Applicant

E.J. Nowak et al., “Scaling Beyond the 65nm Node with FinFET-DGCMOS”, IEEE 2003, CICC, San Jose, CA, Sep. 21-24, 2003, pp. 339-342.Applicant

E.C. Jones, “Doping Challenges in Exploratory Devices for High Performance Logic”, 14th International Conference, Piscataway, NJ, Sep. 22-27, 2002, pp. 1-6.Applicant

T. Park et al. “PMOS Body-Tied FinFET (Omega MOSFET) Characteristics”, Device Research Conference, Piscataway, NJ, Jun. 23-25, 2003, IEEE, pp. 33-34.Applicant

E.J. Nowak et al., “A Functional FinFET-DGCMOS SRAM Cell”, International Electron Devices Meeting 2002, San Francisco, CA, Dec. 8-11, 2002, pp. 411-414.Applicant

Jae-Hyoun Park, “Quantum-wired MOSFET Photodetector Fabricated by Conventional Photolithography on SOI Substrate”, Nanotechnology, 2004, 4th IEEE Conference on Munich, Germany, Aug. 16-19, 2004, Piscataway, NJ, pp. 425-427, XP010767302.Applicant

L. Chang et al. “CMOS Circuit Performance Enhancement by Surface Orientation Optimization” IEEE Transactions on Electron Devices, IEEE Service Center, Piscataway, NJ vol. 51, No. 10, Oct. 2004, pp. 1621-1627 XP001211140.Applicant

M. Stadele et al., “A Comprehensive Study of Corner Effects in Tri-gate Transistors”, IEEE 2004, pp. 165-168.Applicant

Ali Javey et al., “Ballistic Carbon Nanotube Field-Effect Transistors”, Nature, vol. 424, Aug. 7, 2003, pp. 654-657.Applicant

Lide, David R. “Properties of Semiconductors” CRC Handbook of Chemistry and Physics, internet version 2007, (87th edition), David R. Lide—Editor; Taylor and Francis, pp. 12-77-12-89.Applicant

T. M. Mayer, et al., “Chemical Vapor Deposition of Fluoroalkylsilane Monolayer Films for Adhesion Control in Microelectromechanical Systems” 2000 American Vacuum Society B 18(5), Sep.-Oct. 2000, pp. 2433-2440.Applicant

R. Chau et al., Advanced Depleted-Substrate Transistors: Single-Gate, Double-Gate and Tri-gate (Invited Paper), Components Research, Logic Technology Development, Intel Corporation, Hillsboro OR, 2 pages.Applicant

Intel Notice of Allowance for 11/064,996 mailed Dec. 1, 2008.Applicant

Intel Office Action for 11/064,996 mailed Jun. 27, 2008.Applicant

Intel Office Action for 11/064,996 mailed Mar. 14, 2008.Applicant

Intel Office Action for 11/064,996 mailed Sep. 4, 2007.Applicant

Intel Office Action for 11/064,996 mailed Mar. 13, 2007.Applicant

Intel Notice of Allowance for 12/343,400 mailed Jun. 28, 2010.Applicant

Intel Office Action for 12/343,400 mailed Dec. 30, 2009.Applicant

Intel Notice of Allowance for 12/850,582 mailed Oct. 15, 2010.Applicant

Breed, A., et al., “Dual-gate (FinFET) and tri-gate MOSFETs: simulation and design”, Semiconductor Device Research Symposium, 2003 International, Dec. 10-12, 2003, pp. 150-151.Applicant

Buchanan, D. A., et al., “Fabrication of Midgap Metal Gates Compatible with Ultrathin Dielectrics,” Applied Physics Letters, 73.12, (Sep. 21, 1998), pp. 1676-1678.Applicant

Claflin, B., et al., “Interface Studies of Tungsten Nitride and Titanium Nitride Composite Metal Gate Electrodes with Thin Dielectric Layers,” Journal of Vacuum Science and Technology A 16.3, (May/Jun. 1998), pp. 1757-1761.Applicant

Collaert, N. et al. “A Functional 41-Stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node” IEEE Electron Device Letters, vol. 254, No. 8 (Aug. 2004), pp. 568-570.Applicant

Hwang, Jeong-Mo et al., “Novel Polysilicon/Tin Stacked-Gate Structure for Fully-Depleted SOI/CMOS,” International Electronic Devices Meeting Technical Digest, (1992), pp. 345-348.Applicant

Nackaerts et al., “A 0.314γm2 6T-SRAM Cell build with Tall Triple-Gate Devices for 45nm node applications using 0.75NA 193nm lithography,” IDEM, (Dec. 13, 2004), pp. 269-272.Applicant

Nowak, Edward J. et al., “Turning Silicon on its Edge . . . ,” IEEE Circuits & Devices Magazine, vol. 1, (Jan./Feb. 2004), pp. 20-31.Applicant

Park, Donggun et al., “3-Dimensional nano-CMOS Transistors to Overcome Scaling Limits,” IEEE 2004, ISBN 0-7803-8511-X, (Oct. 18, 2004), pp. 35-40.Applicant

Park, Jong-Tae, et al., “Pi-Gate SOI MOSFET”. IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 405-406.Applicant

Sugizaki, T. et al., “Novel Multi-bit SONOS Type Flash Memory Using a High-k Charge Trapping Layer,” VLSI Technology, 2003, Digest of Technical Papers, Symposium on, Jun. 10-12, 2003, pp. 27-28.Applicant

Tang, Stephen H. et al., “FinFET—A quasi-planar double-gate MOSFET”, 2001 IEEE International Solid-State Circuits Conference (Feb. 6, 2001), pp. 1-3.Applicant

Tokoro, Kenji et al., “Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions,” International Symposium on Micromechatronics and Human Science, IEEE (1998), pp. 65-70.Applicant

Wolf, Stanley et al., “Wet Etching Silicon,” Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, (Sep. 1986), (3 pgs.).Applicant

Wang, X. , et al., “Band alignments in sidewall strained Si/strained SiGe heterostructures”, (May 28, 2002), 1-5.Applicant

Yang, Fu-Liang et al., “25nm CMOS Omega FETs” IEEE 2002, 10.3.1-10-.3.4, pp. 255-258.Applicant