US 7,465,666 B2Grant

Method for forming tungsten materials during vapor deposition processes

Issue Date:2008-12-16

•33 Claims

•11 Drawing Sheets

Abstract

In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

Metadata

Assignee

Applied Materials, Inc.

Inventors

Moris Kori
Alfred W. Mak
Jeong Soo Byun
Lawrence Chung-Lai Lei
Hua Chung
Ashok Sinha
Ming Xi

Application Information

Application Number:US 11/766,121

Filing Date:2007-06-21

Priority Date:2000-06-28

Art Unit:2891

Classifications

IPC:

H01L21/44

Patent Drawings (11 sheets)

Description

Cross-Reference to Related Applications

[0001] This application is a continuation of U.S. Ser. No. 11/468,156, filed Aug. 29, 2006, and issued as U.S. Pat. No. 7,235,486, which is a continuation of U.S. Ser. No. 11/338,565, filed Jan. 24, 2006, and issued as U.S. Pat. No. 7,115,494, which is a continuation of U.S. Ser. No. 10/951,354, filed Sep. 29, 2004, and issued as U.S. Pat. No. 7,033,922, which is a continuation of U.S. Ser. No. 09/625,336, filed Jul. 25, 2000, and issued as U.S. Pat. No. 6,855,368, which is a divisional of U.S. Ser. No. 09/605,593, filed Jun. 28, 2000, and issued as U.S. Pat. No. 6,551,929, which are herein incorporated by reference in their entirety.

Background of the Invention

[0002] 1. Field of the Invention

[0003] This invention relates to the processing of semiconductor substrates. More particularly, this invention relates to improvements in the process of depositing refractory metal layers on semiconductor substrates.

[0004] 2. Description of the Related Art

[0005] The semiconductor processing industry continues to strive for larger production yields while increasing the uniformity of layers deposited on substrates having increasing larger surface areas. These same factors in combination with new materials also provide higher integration of circuits per unit area of the substrate. As circuit integration increases, the need for greater uniformity and process control regarding layer thickness rises. As a result, various technologies have been developed to deposit layers on substrates in a cost-effective manner, while maintaining control over the characteristics of the layer. Chemical vapor deposition (CVD) is one of the most common deposition processes employed for depositing layers on a substrate. CVD is a flux-dependent deposition technique that requires precise control of the substrate temperature and precursors introduced into the processing chamber in order to produce a desired layer of uniform thickness. These requirements become more critical as substrate size increases, creating a need for more complexity in chamber design and gas flow technique to maintain adequate uniformity.

[0006] A variant of CVD that demonstrates superior step coverage, compared to CVD, is atomic layer deposition (ALD). ALD is based upon atomic layer epitaxy (ALE) that was originally employed to fabricate electroluminescent displays. ALD employs chemisorption to deposit a saturated monolayer of reactive precursor molecules on a substrate surface. This is achieved by alternatingly pulsing an appropriate reactive precursor into a deposition chamber. Each injection of a reactive precursor is separated by an inert gas purge to provide a new atomic layer additive to previous deposited layers to form a uniform layer on the substrate. The cycle is repeated to form the layer to a desired thickness. A drawback with ALD techniques is that the deposition rate is much lower than typical CVD techniques by at least one order of magnitude.

[0007] Employing the aforementioned deposition techniques it is seen that formation of a layer at a high deposition rate while providing adequate step coverage are conflicting characteristics often necessitating sacrificing one to obtain the other. This has been prevalent when depositing refractory metal layers to cover gaps or vias during formation of contacts that interconnect adjacent metallic layers separated by a dielectric layer. Historically, CVD techniques have been employed to deposit conductive material in order to inexpensively and quickly form contacts. Due to the increasing integration of semiconductor circuitry, tungsten has been used based upon the superior step coverage of tungsten. As a result, deposition of tungsten employing CVD techniques enjoys wide application in semiconductor processing due to the high throughput of the process.

[0008] Depositing tungsten in this manner, however, is attendant with several disadvantages. For example, blanket deposition of a tungsten layer on a semiconductor wafer is time-consuming at temperatures below 400° C. The deposition rate of tungsten may be improved by increasing the deposition temperature to, e.g., about 500° C. to about 550° C. Temperatures in this range may compromise the structural and operational integrity of the underlying portions of the integrated circuit being formed. Tungsten has also frustrated photolithography steps during the manufacturing process by providing a relatively rough surface having a reflectivity of 20% or less than that of a silicon substrate. Finally, tungsten has proven difficult to deposit uniformly. This has been shown by variance in tungsten layers' thickness of greater than 1%, which frustrates control of the resistivity of the layer. Several prior attempts to overcome the aforementioned drawbacks have been attempted.

[0009] For example, in U.S. Pat. No. 5,028,565, which is assigned to the assignee of the present invention, a method is disclosed to improve, inter alia, uniformity of tungsten layers by varying the deposition chemistry. The method includes, in pertinent part, formation of a nucleation layer over an intermediate barrier layer before depositing the tungsten layer via bulk deposition. The nucleation layer is formed from a gaseous mixture of tungsten hexafluoride, hydrogen, silane and argon. The nucleation layer is described as providing a layer of growth sites to promote uniform deposition of a tungsten layer. The benefits provided by the nucleation layer are described as being dependent upon the barrier layer present. For example, were the barrier layer formed from titanium nitride, the tungsten layer's thickness uniformity is improved as much as 15%. The benefits provided by the nucleation layer are not substantial if the barrier layer is formed from sputtered tungsten or sputtered titanium tungsten.

[0010] A need exists, therefore, to provide techniques to improve the characteristics of refractory metal layers deposited on semiconductor substrates.

Summary of the Invention

[0011] A method and system reduces the resistance of contacts of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing onto the substrate alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas; and controlling a quantity of the fluorine atoms associated with the monolayer of the second compound as a function of the carrier gas. Specifically, it was found that by introducing the first and second compounds employing H₂as a carrier gas, the amount of fluorine present in the resulting refractory metal layer was substantially reduced, compared to employing either nitrogen (N₂) or argon as a carrier gas.

[0012] To that end, the system includes a processing chamber, having a holder, disposed therein to support the substrate. A gas delivery system and a pressure control system are in fluid communication with the processing chamber. A temperature control system is in thermal communication therewith. A controller is in electrical communication with gas delivery system, temperature control system, and the pressure control system. A memory is in data communication with the controller. The memory comprises a computer-readable medium having a computer-readable program embodied therein. The computer-readable program includes instructions for controlling the operation of the processing chamber.

Brief Description of the Drawings

[0013] FIG. 1 is a perspective view of a semiconductor processing system in accordance with the present invention;

[0014] FIG. 2 is a detailed view of the processing chambers shown above in FIG. 1;

[0015] FIG. 3 is a schematic view showing deposition of a first molecule onto a substrate during ALD;

[0016] FIG. 4 is a schematic view showing deposition of second molecule onto a substrate during ALD to form a refractory metal layer;

[0017] FIG. 5 is a graphical representation showing the concentration of gases introduced into the processing chamber shown above in FIG. 2, and the time in which the gases are present in the processing chamber, in accordance with the present invention;

[0018] FIG. 6 is a graphical representation showing the relationship between the number of ALD cycles and the thickness of a layer formed on a substrate employing ALD, in accordance with the present invention;

[0019] FIG. 7 is a graphical representation showing the relationship between the number of ALD cycles and the resistivity of a layer formed on a substrate employing ALD, in accordance with the present invention;

[0020] FIG. 8 is a graphical representation showing the relationship between the deposition rate of a layer formed on a substrate employing ALD and the temperature of the substrate;

[0021] FIG. 9 is a graphical representation showing the relationship between the resistivity of a layer formed on a substrate employing ALD and the temperature of the substrate, in accordance with the present invention;

[0022] FIG. 10 is a cross-sectional view of a patterned substrate having a nucleation layer formed thereon employing ALD, in accordance with the present invention;

[0023] FIG. 11 is a partial cross-sectional view of the substrate, shown above in FIG. 10, with a refractory metal layer formed atop of the nucleation layer employing CVD, in accordance with the present invention;

[0024] FIG. 12 is a graphical representation showing the concentration of gases shown above in FIG. 5 in accordance with a first alternate embodiment of the present invention;

[0025] FIG. 13 is a graphical representation showing the concentration of gases shown above in FIG. 5 in accordance with a second alternate embodiment of the present invention;

[0026] FIG. 14 is a graphical representation showing the fluorine content versus depth of a refractory metal layer formed on a substrate employing ALD either Ar or N₂being a carrier gas; and

[0027] FIG. 15 is a graphical representation showing the fluorine content versus depth of a refractory metal layer formed on a substrate employing ALD with H₂being a carrier gas.

Detailed Description of the Invention

[0028] Referring to FIG. 1, an exemplary wafer processing system includes two or more processing chambers 12 and 14 disposed in a common work area 16 surrounded by a wall 18. The processing chambers 12 and 14 are in data communication with a controller 22 that is connected to one or more monitors, shown as 24 and 26. The monitors typically display common information concerning the process associated with the processing chambers 12 and 14. One of the monitors 26 is mounted to the wall 18, with the remaining monitor 24 being disposed in the work area 16. Operational control of the processing chambers 12 and 14 may be achieved use of a light pen, associated with one of the monitors 24 and 26, to communicate with the controller 22. For example, light pen 28 is associated with monitor 24 and facilitates communication with the controller 22 through monitor 24. Light pen 29 facilitates communication with the controller 22 through monitor 26.

[0029] Referring both to FIGS. 1 and 2, each of the processing chambers 12 and 14 includes a housing 30 having a base wall 32, a cover 34, disposed opposite to the base wall 32, and a sidewall 36, extending therebetween. The housing 30 defines a chamber 37, and a pedestal 38 is disposed within the processing chamber 37 to support a substrate 42, such as a semiconductor wafer. The pedestal 38 may be mounted to move between the cover 34 and the base wall 32, using a displacement mechanism (not shown). Supplies of processing gases 39a, 39b, and 39c are in fluid communication with the processing chamber 37 via a showerhead 40. Regulation of the flow of gases from the supplies 39a, 39b and 39c is effectuated via flow valves 41.

[0030] Depending on the specific process, the substrate 42 may be heated to a desired temperature prior to layer deposition via a heater embedded within the pedestal 38. For example, the pedestal 38 may be resistively heated by applying an electric current from an AC power supply 43 to the heater element 44. The wafer 40 is, in turn, heated by the pedestal 38, and can be maintained within a desired process temperature range of, for example, about 20° C. to about 750° C. A temperature sensor 46, such as a thermocouple, is also embedded in the wafer support pedestal 38 to monitor the temperature of the pedestal 38 in a conventional manner. For example, the measured temperature may used in a feedback loop to control the electrical current applied to the heater element 44 by the power supply 43, such that the wafer temperature can be maintained or controlled at a desired temperature which is suitable for the particular process application. The pedestal 38 is optionally heated using radiant heat (not shown). A vacuum pump 48 is used to evacuate the processing chamber 37 and to help maintain the proper gas flows and pressure inside the processing chamber 37.

[0031] Referring to FIGS. 1 and 3, one or both of the processing chambers 12 and 14, discussed above may operate to deposit refractory metal layers on the substrate employing ALD techniques. Depending on the specific stage of processing, the refractory metal layer may be deposited on the material from which the substrate 42 is fabricated, e.g., SiO₂. The refractory metal layer may also be deposited on a layer previously formed on the substrate 42, e.g., titanium, titanium nitride and the like.

[0032] ALD proceeds by chemisorption. The initial surface of the substrate 42 presents an active ligand to the process region. A batch of a first processing gas, in this case Aa_x, results in a layer of “A” being deposited on the substrate 42 having a surface of ligand “a” exposed to the processing chamber 37. Thereafter, a purge gas enters the processing chamber 37 to purge the gas Aa_x. After purging gas Aa_xfrom the processing chamber 37, a second batch of processing gas, Bb_y, is introduced into the processing chamber 37. The a ligand present on the substrate surface reacts with the “b” ligand and “B” atom on the, releasing molecules ab and Ba, that move away from the substrate 42 and are subsequently pumped from the processing chamber 37. In this manner, a surface comprising a monolayer of A atoms remains upon the substrate 42 and exposed to the processing chamber 37, shown in FIG. 4. The process proceeds cycle after cycle, until the desired thickness is achieved.

[0033] Referring to both FIGS. 2 and 5, although any type of processing gas may be employed, in the present example, the processing gas Aa_xis WF₆and the processing gas Bb_yis B₂H₆. Two purge gases were employed: Ar and N₂. Each of the processing gases is flowed into the processing chamber 37 with a carrier gas, which in this example were one of the purge gases: WF₆is introduced with Ar and B₂H₆is introduced with N₂. It should be understood, however, that the purge gas may differ from the carrier gas, discussed more fully below. One cycle of the ALD technique in accordance with the present invention includes flowing the purge gas, N₂, into the processing chamber 37 during time t₁, which is approximately five seconds before B₂H₆is flowed into the processing chamber 37. During time t₂, the processing gas B₂H₆is flowed into the processing chamber 37 for approximately five seconds, along with a carrier gas, which in this example is N₂. After five seconds have lapsed, the flow of B₂H₆terminates and the flow of N₂continues during time t₃for an additional five seconds, purging the processing chamber of B₂H₆. During time t₄, the processing chamber 37 is pumped so as to remove all gases. The pumping process lasts approximately thirty seconds. After pumping of the process chamber 37, the carrier gas Ar is introduced for approximately five seconds during time t₅, after which time the process gas WF₆is introduced into the processing chamber 37 for about five seconds, along with the carrier gas Ar during time t₆. The flow of the processing gas WF₆into the processing chamber 37 is terminated approximately five seconds after it commenced. After the flow of WF₆into the processing chamber 37 terminates, the flow of Ar continues for five additional seconds, during time t₇. Thereafter, the processing chamber 37 is pumped so as to remove all gases therein, during time t₈. As before, the pumping process lasts approximately thirty seconds, thereby concluding one cycle of the ALD technique in accordance with the present invention.

[0034] The benefits of employing ALD are manifold, including flux-independence of layer formation that provides uniformity of deposition independent of the size of a substrate. For example, the measured difference of the layer uniformity and thickness measured between of 200 mm substrate and a 32 mm substrate deposited in the same chamber is negligible. This is due to the self-limiting characteristics of chemisorption. Further, the chemisorption characteristics contribute to near-perfect step coverage over complex topography.

[0035] In addition, the thickness of the layer A, shown in FIG. 4, may be easily controlled while minimizing the resistance of the same by employing ALD. With reference to FIG. 6 it is seen the slope of line 50 that the thickness of the tungsten layer A is proportional to the number of cycles employed to form the same. The resistivity of the tungsten layer, however, is relatively independent of the thickness of the layer, as shown by the slope of line 52 in FIG. 7. Thus, employing ALD, the thickness of a refractory metal layer may be easily controlled as a function of the cycling of the process gases introduced into the processing chamber with a negligible effect on the resistivity.

[0036] Referring to FIG. 8, control of the deposition rate was found to be dependent upon the temperature of the substrate 42. As shown by the slope of line 54, increasing the temperature of the substrate 42 increased the deposition rate of the tungsten layer A. For example, at point 56, the deposition rate is shown to be approximately 2 Å/cycle at 250° C. However at point 58 the deposition rate is approximately 5 Å/cycle at a temperature of 450° C. The resistivity of the tungsten layer, however, is virtually independent of the layer thickness, as shown by the slope of curve 59, shown in FIG. 9. As a result, the deposition rate of the tungsten layer may be controlled as a function of temperature without comprising the resistivity of the same. However, it is preferred to perform many processing steps at temperatures well below 450° C.

[0037] To that end, a bifurcated deposition process may be practiced in which nucleation of the refractory metal layer occurs in a different chamber than the formation of the remaining portion of the refractory metal layer. Specifically, in the present example, nucleation of a tungsten layer occurs in chamber 12 employing the ALD techniques discussed above, with the substrate 42 being heated in the range of 200° C. to 400° C., and the processing chamber 37 being pressurized in the range of 1 to 10 Torr. A nucleation layer 60 of approximately 12 to 20 nm is formed on a patterned substrate 42, shown in FIG. 10. As shown, the substrate 42 includes a barrier layer 61 and a patterned layer having a plurality of vias 63. The nucleation layer is formed adjacent to the patterned layer covering the vias 63. As shown, forming the nucleation layer 60 employing ALD techniques provides 100% step coverage. To decrease the time required to form a complete layer of tungsten, a bulk deposition of tungsten onto the nucleation layer 60 occurs using CVD techniques, while the substrate 42 is disposed in processing chamber 14, shown in FIG. 1. The bulk deposition may be performed using recipes well known in the art. In this manner, a tungsten layer 65 providing a complete plug fill is achieved on the patterned layer with vias having aspect ratios of approximately 6:1, shown in FIG. 11.

[0038] As mentioned above, in an alternate embodiment of the present invention, the carrier gas may differ from the purge gas, as shown in FIG. 12. The purge gas, which is introduced at time intervals t₁, t₃, t₅and t₇comprises of Ar. The carrier gas, which is introduced at time intervals t₂and t₆, comprises of N₂. Thus, at time interval t₂the gases introduced into the processing chamber include a mixture of B₂H₆and N₂, and a time interval t₆, the gas mixture includes WF₆and N₂. The pump process during time intervals t₄and t₈is identical to the pump process discussed above with respect to FIG. 5. In yet another embodiment, shown in FIG. 13, the carrier gas during time intervals t₂and t₆comprises H₂, with the purge gas introduced at time intervals t₁, t₃, t₅and t₇comprising of Ar. The pump processes at time intervals t₄and t₈are as discussed above. As a result, at time interval t₂the gas mixture introduced into the processing chamber 37 consists of B₂H₆and H₂, and WF₆and H₂, at time interval t₆.

[0039] An advantage realized by employing the H₂carrier gas is that the stability of the tungsten layer A may be improved. Specifically, by comparing curve 66 in FIG. 14 with the curve 68 in FIG. 15, it is seen that the concentration of fluorine in the nucleation layer 60 is much less when H₂is employed as the carrier gas, as compared with use of N₂or Ar as a carrier gas. Specifically, the apex and nadir of curve 66 show that the fluorine concentration reaches levels in excess of 1×10²¹atoms per cubic centimeter and only as low as just below 1×10¹⁹atoms per cubic centimeter. Curve 68, however, shows that the fluorine concentration is well below 1×10²¹atoms per cubic centimeter at the apex and well below 1×10¹⁷atoms per cubic centimeter at the nadir. Thus, employing H₂as the carrier gas provides a much more stable film, i.e., the probability of fluorine diffusing into the substrate, or adjacent layer is reduced. This also reduces the resistance of the refractory metal layer by avoiding the formation of a metal fluoride that may result from the increased fluorine concentration. Thus, the stability of the nucleation layer, as well as the resistivity of the same, may be controlled as a function of the carrier gas employed. This is also true when a refractory metal layer is deposited entirely employing ALD techniques, i.e., without using other deposition techniques, such as CVD.

[0040] Referring again to FIG. 2, the process for depositing the tungsten layer may be controlled using a computer program product that is executed by the controller 22. To that end, the controller 22 includes a central processing unit (CPU) 70, a volatile memory, such as a random access memory (RAM) 72 and permanent storage media, such as a floppy disk drive for use with a floppy diskette, or hard disk drive 74. The computer program code can be written in any conventional computer readable programming language; for example, 68000 assembly language, C, C++, Pascal, FORTRAN, and the like. Suitable program code is entered into a single file, or multiple files, using a conventional text editor and stored or embodied in a computer-readable medium, such as the hard disk drive 74. If the entered code text is in a high level language, the code is compiled and the resultant compiler code is then linked with an object code of precompiled WINDOWS® library routines. To execute the linked and compiled object code the system user invokes the object code, causing the CPU 70 to load the code in RAM 72. The CPU 70 then reads and executes the code to perform the tasks identified in the program.

[0041] Although the invention has been described in terms of specific embodiments, one skilled in the art will recognize that various changes to the reaction conditions, i.e., temperature, pressure, film thickness and the like can be substituted and are meant to be included herein. In addition, other refractory metals may be deposited, in addition to tungsten, and other deposition techniques may be employed in lieu of CVD. For example, physical vapor deposition (PVD) techniques, or a combination of both CVD and PVD techniques may be employed. Therefore, the scope of the invention should not be based upon the foregoing description. Rather, the scope of the invention should be determined based upon the claims recited herein, including the full scope of equivalents thereof.

Claims

What is claimed is:

1. A method for forming a tungsten material on a substrate surface, comprising:

heating a substrate within a deposition chamber to a deposition temperature;

exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition process; and

exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition process.

2. The method of claim 1, further comprising exposing the substrate to an initiation gas prior to the atomic layer deposition process.

3. The method of claim 2, wherein the initiation gas comprises nitrogen or argon.

4. The method of claim 3, wherein the substrate is exposed to the initiation gas for about 5 seconds.

5. The method of claim 1, wherein the substrate is exposed to a reducing gas comprising the diborane and hydrogen gas during the atomic layer deposition process.

6. The method of claim 5, wherein the tungsten precursor gas comprises tungsten hexafluoride.

7. The method of claim 1, wherein the tungsten nucleation layer is formed having a thickness within a range from about 10 Å to about 100 Å.

8. The method of claim 1, wherein the deposition chamber is a single station within a deposition system.

9. The method of claim 1, wherein the deposition chamber is a first deposition station within a deposition system containing multiple stations surrounded by a wall.

10. The method of claim 9, further comprising:

positioning the substrate into a second deposition station subsequent the atomic layer deposition process and prior to the chemical vapor deposition process; and

forming the tungsten bulk layer within the second deposition station.

11. The method of claim 9, further comprising:

positioning the substrate comprising the tungsten nucleation layer into a second deposition station within the deposition system; and

forming the tungsten bulk layer over the tungsten nucleation layer by the chemical vapor deposition process within the second deposition station.

12. The method of claim 1, wherein the deposition chamber during the atomic layer deposition process has a pressure within a range from about 1 Torr to about 10 Torr.

13. The method of claim 12, wherein the deposition temperature is within a range from about 200° C. to about 400° C.

14. A method for forming a tungsten material on a substrate surface, comprising:

exposing a substrate within a deposition chamber sequentially to a reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition process; and

15. The method of claim 14, further comprising exposing the substrate to an initiation gas prior to the atomic layer deposition process.

16. The method of claim 15, wherein the initiation gas comprises nitrogen or argon.

17. The method of claim 16, wherein the substrate is exposed to the initiation gas for about 5 seconds.

18. The method of claim 15, wherein the reducing gas comprises a gas selected from the group consisting of diborane, hydrogen, silane, derivatives thereof, and combinations thereof.

19. The method of claim 14, wherein the reducing gas comprises diborane and hydrogen.

20. The method of claim 19, wherein the tungsten precursor gas comprises tungsten hexafluoride.

21. The method of claim 14, wherein the reducing gas comprises silane and hydrogen.

22. The method of claim 21, wherein the tungsten precursor gas comprises tungsten hexafluoride.

23. The method of claim 14, wherein the tungsten nucleation layer is formed having a thickness within a range from about 10 Å to about 100 Å.

24. The method of claim 14, wherein the deposition chamber is a single station within a deposition system.

25. The method of claim 14, wherein the deposition chamber is a first deposition station within a deposition system containing multiple stations surrounded by a wall.

26. The method of claim 25, further comprising:

positioning the substrate into a second deposition station subsequent the atomic layer deposition process and prior to the chemical vapor deposition process; and

forming the tungsten bulk layer within the second deposition station.

27. The method of claim 25, further comprising:

positioning the substrate comprising the tungsten nucleation layer into a second deposition station within the deposition system; and

forming the tungsten bulk layer over the tungsten nucleation layer by the chemical vapor deposition process within the second deposition station.

28. The method of claim 14, wherein the deposition chamber during the atomic layer deposition process has a pressure within a range from about 1 Torr to about 10 Torr.

29. The method of claim 28, wherein the substrate is heated to a deposition temperature within a range from about 200° C. to about 400° C. during the atomic layer deposition process.

30. A method for forming a tungsten material on a substrate surface, comprising:

positioning a substrate at a first deposition station within a deposition system comprising at least two deposition stations;

flowing a reducing gas into the first deposition station, whereby the reducing gas is adsorbed onto the substrate to form an adsorbed reducing gas layer;

purging the first deposition station;

exposing the substrate sequentially to a tungsten precursor gas and diborane to form a tungsten nucleation layer thereon during an atomic layer deposition process;

positioning the substrate at a second deposition station within the deposition system; and

exposing the substrate to the tungsten precursor gas and hydrogen gas to deposit a tungsten bulk layer over the tungsten nucleation layer by a chemical vapor deposition process.

31. The method of claim 30, further comprising exposing the substrate to an initiation gas prior to the atomic layer deposition process.

32. The method of claim 31, wherein the initiation gas comprises nitrogen or argon.

33. The method of claim 32, wherein the substrate is exposed to the initiation gas for about 5 seconds.

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US2001/0000866(A1)	2001-05-01	Sneh et al.	Applicant
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US2001/0009695(A1)	2001-07-01	Saanila et al.	Applicant
US2001/0011526(A1)	2001-08-01	Doering et al.	Applicant
US2001/0024387(A1)	2001-09-01	Raaijmakers et al.	Applicant
US2001/0025979(A1)	2001-10-01	Kim et al.	Applicant
US2001/0028924(A1)	2001-10-01	Sherman	Applicant
US2001/0029094(A1)	2001-10-01	Mee-Young et al.	Applicant
US2001/0031562(A1)	2001-10-01	Raaijmakers et al.	Applicant
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US2001/0041250(A1)	2001-11-01	Werkhoven	Applicant
US2001/0042799(A1)	2001-11-01	Kim et al.	Applicant
US2001/0050039(A1)	2001-12-01	Park	Applicant
US2001/0054730(A1)	2001-12-01	Kim et al.	Applicant
US2001/0054769(A1)	2001-12-01	Raaijmakers et al.	Applicant
US2002/0000598(A1)	2002-01-01	Kang et al.	Applicant
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US2002/0061612(A1)	2002-05-01	Sandhu et al.	Applicant
US2002/0066411(A1)	2002-06-01	Chiang et al.	Applicant
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US2002/0073924(A1)	2002-06-01	Chiang et al.	Applicant
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US2002/0076481(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076507(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076508(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076837(A1)	2002-06-01	Hujanen et al.	Applicant
US2002/0081844(A1)	2002-06-01	Jeon et al.	Applicant
US2002/0086111(A1)	2002-07-01	Byun et al.	Applicant
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US2002/0094689(A1)	2002-07-01	Park	Applicant
US2002/0098627(A1)	2002-07-01	Pomarede et al.	Applicant
US2002/0104481(A1)	2002-08-01	Chiang et al.	Applicant
US2002/0105088(A1)	2002-08-01	Yang et al.	Applicant
US2002/0106536(A1)	2002-08-01	Lee et al.	Applicant
US2002/0106846(A1)	2002-08-01	Seutter et al.	Applicant
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US2002/0115886(A1)	2002-08-01	Yasuhara et al.	Applicant
US2002/0117399(A1)	2002-08-01	Chen et al.	Applicant
US2002/0121241(A1)	2002-09-01	Nguyen et al.	Applicant
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US2002/0121697(A1)	2002-09-01	Marsh	Applicant
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US2002/0144655(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0144657(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0146511(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0155722(A1)	2002-10-01	Satta et al.	Applicant
US2002/0162506(A1)	2002-11-01	Sneh et al.	Applicant
US2002/0164421(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0164423(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0177282(A1)	2002-11-01	Song et al.	Applicant
US2002/0182320(A1)	2002-12-01	Leskela et al.	Applicant
US2002/0187256(A1)	2002-12-01	Elers et al.	Applicant
US2002/0187631(A1)	2002-12-01	Kim et al.	Applicant
US2002/0197402(A1)	2002-12-01	Chiang et al.	Applicant
US2002/0197863(A1)	2002-12-01	Mak et al.	Applicant
US2003/0013300(A1)	2003-01-01	Byun	Applicant
US2003/0013320(A1)	2003-01-01	Kim et al.	Applicant
US2003/0017697(A1)	2003-01-01	Choi et al.	Applicant
US2003/0022487(A1)	2003-01-01	Yoon et al.	Applicant
US2003/0022507(A1)	2003-01-01	Chen et al.	Applicant
US2003/0029715(A1)	2003-02-01	Yu et al.	Applicant
US2003/0031807(A1)	2003-02-01	Elers et al.	Applicant
US2003/0032281(A1)	2003-02-01	Werkhoven et al.	Applicant
US2003/0038369(A1)	2003-02-01	Layadi et al.	Applicant
US2003/0042630(A1)	2003-03-01	Babcoke et al.	Applicant
US2003/0049931(A1)	2003-03-01	Byun et al.	Applicant
US2003/0049942(A1)	2003-03-01	Haukka et al.	Applicant
US2003/0053799(A1)	2003-03-01	Lei	Applicant
US2003/0054631(A1)	2003-03-01	Raaijmakers et al.	Applicant
US2003/0057526(A1)	2003-03-01	Chung et al.	Applicant
US2003/0057527(A1)	2003-03-01	Chung et al.	Applicant
US2003/0059538(A1)	2003-03-01	Chung et al.	Applicant
US2003/0072884(A1)	2003-04-01	Zhang et al.	Applicant
US2003/0072975(A1)	2003-04-01	Shero et al.	Applicant
US2003/0079686(A1)	2003-05-01	Chen et al.	Applicant
US2003/0082296(A1)	2003-05-01	Elers et al.	Applicant
US2003/0082300(A1)	2003-05-01	Todd et al.	Applicant
US2003/0082301(A1)	2003-05-01	Chen et al.	Applicant
US2003/0082307(A1)	2003-05-01	Chung et al.	Applicant
US2003/0087520(A1)	2003-05-01	Chen et al.	Applicant
US2003/0089308(A1)	2003-05-01	Raaijmakers	Applicant
US2003/0101927(A1)	2003-06-01	Raaijmakers et al.	Applicant
US2003/0104126(A1)	2003-06-01	Fang et al.	Applicant
US2003/0106490(A1)	2003-06-01	Jallepally et al.	Applicant
US2003/0108674(A1)	2003-06-01	Chung et al.	Applicant
US2003/0113187(A1)	2003-06-01	Lei et al.	Applicant
US2003/0116087(A1)	2003-06-01	Nguyen et al.	Applicant
US2003/0121608(A1)	2003-07-01	Chen et al.	Applicant
US2003/0123216(A1)	2003-07-01	Yoon et al.	Applicant
US2003/0124262(A1)	2003-07-01	Chen et al.	Applicant
US2003/0127043(A1)	2003-07-01	Lu et al.	Applicant
US2003/0129826(A1)	2003-07-01	Werkhoven et al.	Applicant
US2003/0134508(A1)	2003-07-01	Raaijmakers et al.	Applicant
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US2003/0143839(A1)	2003-07-01	Raaijmakers et al.	Applicant
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US2003/0157760(A1)	2003-08-01	Xi et al.	Applicant
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US2004/0256351(A1)	2004-12-01	Chung et al.	Applicant
US2004/0266175(A1)	2004-12-01	Chen et al.	Applicant
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US2006/0148253(A1)	2006-07-01	Chung et al.	Applicant
US2006/0153973(A1)	2006-07-01	Chang et al.	Applicant
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US2006/0199372(A1)	2006-09-01	Chung et al.	Applicant
US2006/0216928(A1)	2006-09-01	Chung et al.	Applicant
US2006/0257295(A1)	2006-11-01	Chen et al.	Applicant
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US2006/0292864(A1)	2006-12-01	Yang et al.	Applicant
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US2007/0020924(A1)	2007-01-01	Wang et al.	Applicant
US2007/0026147(A1)	2007-02-01	Chen et al.	Applicant
US2007/0067609(A1)	2007-03-01	Chen et al.	Applicant
US2007/0099415(A1)	2007-05-01	Chen et al.	Applicant
US2007/0119370(A1)	2007-05-01	Ma et al.	Applicant
US2007/0119371(A1)	2007-05-01	Ma et al.	Applicant
US2007/0128862(A1)	2007-06-01	Ma et al.	Applicant
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US2007/0128864(A1)	2007-06-01	Ma et al.	Applicant
DE19820147	1999-07-01		Applicant
DE19627017	2000-01-01		Applicant
EP344352	1989-12-01		Applicant
EP429270	1991-05-01		Applicant
EP442490	1991-08-01		Applicant
EP799641	1997-10-01		Applicant
EP1167569	2002-01-01		Applicant
FR2626110	1989-07-01		Applicant
FR2692597	1993-12-01		Applicant
GB2355727	2001-05-01		Applicant
JP58-098917	1983-06-01		Applicant
JP58-100419	1983-06-01		Applicant
JP60-065712	1985-04-01		Applicant
JP61-035847	1986-02-01		Applicant
JP61-210623	1986-09-01		Applicant
JP61-069508	1987-03-01		Applicant
JP62-091495	1987-04-01		Applicant
JP62-141717	1987-06-01		Applicant
JP62-167297	1987-07-01		Applicant
JP62-171999	1987-07-01		Applicant
JP62-232919	1987-10-01		Applicant
JP63-062313	1988-03-01		Applicant
JP63-085098	1988-04-01		Applicant
JP63-090833	1988-04-01		Applicant
JP63-222420	1988-09-01		Applicant
JP63-222421	1988-09-01		Applicant
JP63-227007	1988-09-01		Applicant
JP63-252420	1988-10-01		Applicant
JP63-266814	1988-11-01		Applicant
JP64-009895	1989-01-01		Applicant
JP64-009896	1989-01-01		Applicant
JP64-009897	1989-01-01		Applicant
JP64-037832	1989-02-01		Applicant
JP64-082615	1989-03-01		Applicant
JP64-082617	1989-03-01		Applicant
JP64-082671	1989-03-01		Applicant
JP64-082676	1989-03-01		Applicant
JP1-103982	1989-04-01		Applicant
JP1-103996	1989-04-01		Applicant
JP64-090524	1989-04-01		Applicant
JP1-117017	1989-05-01		Applicant
JP1-143221	1989-06-01		Applicant
JP1-143233	1989-06-01		Applicant
JP1-154511	1989-06-01		Applicant
JP1-236657	1989-09-01		Applicant
JP1-245512	1989-09-01		Applicant
JP1-264218	1989-10-01		Applicant
JP1-270593	1989-10-01		Applicant
JP1-272108	1989-10-01		Applicant
JP1-290221	1989-11-01		Applicant
JP1-290222	1989-11-01		Applicant
JP1-296673	1989-11-01		Applicant
JP1-303770	1989-12-01		Applicant
JP1-305894	1989-12-01		Applicant
JP1-313927	1989-12-01		Applicant
JP2-012814	1990-01-01		Applicant
JP2-014513	1990-01-01		Applicant
JP2-017634	1990-01-01		Applicant
JP2-063115	1990-03-01		Applicant
JP2-074029	1990-03-01		Applicant
JP2-074587	1990-03-01		Applicant
JP2-106822	1990-04-01		Applicant
JP2-129913	1990-05-01		Applicant
JP2-162717	1990-06-01		Applicant
JP2-172895	1990-07-01		Applicant
JP2-196092	1990-08-01		Applicant
JP2-203517	1990-08-01		Applicant
JP2-230690	1990-09-01		Applicant
JP2-230722	1990-09-01		Applicant
JP2-246161	1990-09-01		Applicant
JP2-264491	1990-10-01		Applicant
JP2-283084	1990-11-01		Applicant
JP2-304916	1990-12-01		Applicant
JP3-019211	1991-01-01		Applicant
JP3-022569	1991-01-01		Applicant
JP3-023294	1991-01-01		Applicant
JP3-023299	1991-01-01		Applicant
JP3-044967	1991-02-01		Applicant
JP3-048421	1991-03-01		Applicant
JP3-070124	1991-03-01		Applicant
JP3-185716	1991-08-01		Applicant
JP3-208885	1991-09-01		Applicant
JP3-234025	1991-10-01		Applicant
JP3-286522	1991-12-01		Applicant
JP3-286531	1991-12-01		Applicant
JP4-031391	1992-02-01		Applicant
JP4-031396	1992-02-01		Applicant
JP4-100292	1992-04-01		Applicant
JP4-111418	1992-04-01		Applicant
JP4-132214	1992-05-01		Applicant
JP4-132681	1992-05-01		Applicant
JP4-151822	1992-05-01		Applicant
JP4-162418	1992-06-01		Applicant
JP4-175299	1992-06-01		Applicant
JP4-186824	1992-07-01		Applicant
JP4-212411	1992-08-01		Applicant
JP4-260696	1992-09-01		Applicant
JP4-273120	1992-09-01		Applicant
JP4-285167	1992-10-01		Applicant
JP4-291916	1992-10-01		Applicant
JP4-325500	1992-11-01		Applicant
JP4-328874	1992-11-01		Applicant
JP5-029228	1993-02-01		Applicant
JP5-047665	1993-02-01		Applicant
JP5-047666	1993-02-01		Applicant
JP5-047668	1993-02-01		Applicant
JP5-074717	1993-03-01		Applicant
JP5-074724	1993-03-01		Applicant
JP5-102189	1993-04-01		Applicant
JP5-160152	1993-06-01		Applicant
JP5-175143	1993-07-01		Applicant
JP5-175145	1993-07-01		Applicant
JP5-182906	1993-07-01		Applicant
JP5-186295	1993-07-01		Applicant
JP5-206036	1993-08-01		Applicant
JP5-234899	1993-09-01		Applicant
JP5-235047	1993-09-01		Applicant
JP5-251339	1993-09-01		Applicant
JP5-270997	1993-10-01		Applicant
JP5-283336	1993-10-01		Applicant
JP5-291152	1993-11-01		Applicant
JP5-304334	1993-11-01		Applicant
JP5-343327	1993-12-01		Applicant
JP5-343685	1993-12-01		Applicant
JP6-045606	1994-02-01		Applicant
JP6-132236	1994-05-01		Applicant
JP6-177381	1994-06-01		Applicant
JP6-196809	1994-07-01		Applicant
JP6-222388	1994-08-01		Applicant
JP6-224138	1994-08-01		Applicant
JP6-230421	1994-08-01		Applicant
JP6-252057	1994-09-01		Applicant
JP6-291048	1994-10-01		Applicant
JP7-070752	1995-03-01		Applicant
JP7-086269	1995-03-01		Applicant
JP7-300649	1995-11-01		Applicant
JP8-181076	1996-07-01		Applicant
JP8-245291	1996-09-01		Applicant
JP8-264530	1996-10-01		Applicant
JP9-260786	1997-10-01		Applicant
JP9-293681	1997-11-01		Applicant
JP10-188840	1998-07-01		Applicant
JP10-190128	1998-07-01		Applicant
JP10-308283	1998-11-01		Applicant
JP11-269652	1999-10-01		Applicant
JP2000-031387	2000-01-01		Applicant
JP2000-058777	2000-02-01		Applicant
JP2000-068072	2000-03-01		Applicant
JP2000-087029	2000-03-01		Applicant
JP2000-138094	2000-05-01		Applicant
JP2000-178735	2000-06-01		Applicant
JP2000-218445	2000-08-01		Applicant
JP2000-319772	2000-11-01		Applicant
JP2000-340883	2000-12-01		Applicant
JP2000-353666	2000-12-01		Applicant
JP2001-020075	2001-01-01		Applicant
JP2001-062244	2001-03-01		Applicant
JP2001-111000	2001-04-01		Applicant
JP2001-152339	2001-06-01		Applicant
JP2001-172767	2001-06-01		Applicant
JP2001-189312	2001-07-01		Applicant
JP2001-217206	2001-08-01		Applicant
JP2001-220287	2001-08-01		Applicant
JP2001-220294	2001-08-01		Applicant
JP2001-240972	2001-09-01		Applicant
JP2001-254181	2001-09-01		Applicant
JP2001-284042	2001-10-01		Applicant
JP2001-303251	2001-10-01		Applicant
JP2001-328900	2001-11-01		Applicant
WO90/02216	1990-03-01		Applicant
WO91/10510	1991-07-01		Applicant
WO93/02111	1993-02-01		Applicant
WO96/17107	1996-06-01		Applicant
WO96/18756	1996-06-01		Applicant
WO98/06889	1998-02-01		Applicant
WO98/51838	1998-11-01		Applicant
WO99/01595	1999-01-01		Applicant
WO99/13504	1999-03-01		Applicant
WO99/29924	1999-06-01		Applicant
WO99/41423	1999-08-01		Applicant
WO99/65064	1999-12-01		Applicant
WO/11721	2000-03-01		Applicant
WO/15865	2000-03-01		Applicant
WO/15881	2000-03-01		Applicant
WO/16377	2000-03-01		Applicant
WO/54320	2000-09-01		Applicant
WO/63957	2000-10-01		Applicant
WO/79019	2000-12-01		Applicant
WO/79576	2000-12-01		Applicant
WO1/15220	2001-03-01		Applicant
WO1/17692	2001-03-01		Applicant
WO1/27346	2001-04-01		Applicant
WO1/27347	2001-04-01		Applicant
WO1/29280	2001-04-01		Applicant
WO1/29891	2001-04-01		Applicant
WO1/29893	2001-04-01		Applicant
WO1/36702	2001-05-01		Applicant
WO1/40541	2001-06-01		Applicant
WO1/66832	2001-09-01		Applicant
WO2/01628	2002-01-01		Applicant
WO2/08485	2002-01-01		Applicant
WO2/43115	2002-05-01		Applicant
WO2/45167	2002-06-01		Applicant
WO2/45871	2002-06-01		Applicant
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WO2/067319	2002-08-01		Applicant
WO2004/106584	2004-12-01		Applicant
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