US 6,833,161 B2Grant

Cyclical deposition of tungsten nitride for metal oxide gate electrode

Issue Date:2004-12-21

•53 Claims

•8 Drawing Sheets

Abstract

A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

Metadata

Assignee

Applied Materials, Inc.

Inventors

Shulin Wang
Ulrich Kroemer
Lee Luo
Aihua Chen
Ming Li

Application Information

Application Number:US 10/084,767

Filing Date:2002-02-26

Priority Date:2002-02-26

Art Unit:7

Classifications

IPC:

C23C 1614C23C 1634

Field of Search:

4272504272534272553924272553944272557

Patent Drawings (8 sheets)

Description

Background of the Invention

[0002] 1. Field of the Invention

[0003] Embodiments of the present invention relate to a method for manufacturing integrated circuit devices. More particularly, embodiments of the invention relate to forming stoichiometric tungsten nitride films using cyclic or atomic layer deposition.

[0004] 2. Description of the Related Art

[0005] Semiconductor device geometries have dramatically decreased in size since such devices were first introduced several decades ago and are continually decreasing in size today. Metal gates made of tungsten are becoming important because of the resistance requirements of these smaller devices. Tungsten is a desirable material because it is widely available and has a lower resistivity and lower contact resistance compared to other conductive metals.

[0006] One drawback to using tungsten in a metal gate, however, is that a barrier layer is typically required between silicon and the tungsten to prevent the formation of tungsten silicide. Tungsten silicide has a higher resistivity than tungsten and thus, increases the overall resistance of the gate. Barrier layers, however, also increase the resistance of the device and are deposited in amounts greater than needed due to the inherent limitations of conventional deposition techniques.

[0007] Bulk deposition processes, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), are conventionally used to deposit barrier layers. Bulk deposition processes are high deposition rate processes that maintain certain deposition conditions for a period of time to deposit material having a desired thickness, typically greater than 1,000 angstroms. This time period varies depending on the dynamics of the reaction and can be complicated where a reaction condition must be maintained for a brief period of time in order to deposit a controllable and repeatable thin layer of material.

[0008] There is a need, therefore, for new methods for depositing controllable, repeatable, and thin barrier layers.

Summary of the Invention

[0009] Embodiments of the invention include a method for forming a tungsten nitride layer by alternately pulsing a tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness of about 100 angstroms or less is formed.

[0010] Embodiments of the invention also include a method for forming a tungsten layer comprising depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound, and depositing a tungsten layer by alternately pulsing a second tungsten-containing compound and a reducing compound.

[0011] Embodiments of the invention further include a method for forming a tungsten layer, comprising depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound, and depositing a tungsten layer on the barrier layer. In one aspect, the tungsten layer is deposited by chemical vapor deposition or physical vapor deposition techniques. In another aspect, the tungsten layer is deposited by alternately pulsing a second tungsten-containing compound and a reducing compound. In yet another aspect, the tungsten layer is deposited by alternately pulsing the second tungsten-containing compound and the reducing compound to form a pre-layer having a thickness of about 50 angstroms or less followed by bulk tungsten deposition using chemical vapor deposition or physical vapor deposition.

Brief Description of the Drawings

[0012] So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.

[0013] It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

[0014] FIG. 1 depicts a schematic cross-sectional view of a process chamber that can be used to practice embodiments described herein.

[0015] FIG. 2 illustrates a process sequence for the formation of a tungsten nitride barrier layer using a cyclical deposition technique according to one embodiment described herein.

[0016] FIG. 3 illustrates a process sequence for the formation of a tungsten nitride layer using a cyclical deposition technique according to another embodiment described herein.

[0017] FIG. 4 illustrates a process sequence for the formation of a tungsten nitride layer using a cyclical deposition technique according to another embodiment described herein.

[0018] FIG. 4A illustrates a process sequence for the formation of a tungsten nitride layer particularly on a silicon surface using a cyclical deposition technique according to another embodiment described herein.

[0019] FIG. 5 shows a cross sectional view of an exemplary metal oxide gate device 10 utilizing a tungsten nitride layer according to the present invention.

[0020] FIG. 6 shows a cross sectional view of a conventional DRAM device utilizing a tungsten nitride layer deposited according to an embodiment of a cyclical deposition technique described herein.

[0021] FIG. 7 shows an Auger profile showing the atomic concentration of the deposited tungsten nitride layer.

Detailed Description of the Preferred Embodiment

[0022] A tungsten nitride layer (W_xN_y) having a thickness less than 100 angstroms, such as about 20 angstroms or less, is formed using embodiments of a cyclical deposition technique described herein. The tungsten nitride layer has a resistivity of about 380 μohms-cm or less, and provides excellent barrier properties for various device applications, such as an electrode in either DRAM or capacitors for example, without subsequent thermal treatment. The tungsten nitride layer also has a significantly reduced fluorine concentration compared to tungsten nitride layers deposited by conventional bulk deposition techniques, such as plasma enhanced chemical vapor deposition (PECVD). The tungsten nitride layer is particularly useful for devices having dimensions of 0.15 microns or less, such as 100 nm (nanometers).

[0023] “Cyclical deposition” as used herein refers to the sequential introduction of two or more reactive compounds to deposit a mono layer of material on a substrate surface. The two or more reactive compounds are sequentially introduced into a reaction zone of a processing chamber. Each reactive compound is separated by a delay/pause to allow each compound to adhere and/or react on the substrate surface. In one aspect, a first precursor or compound A is dosed/pulsed into the reaction zone followed by a first time delay/pause. Next, a second precursor or compound B is dosed/pulsed into the reaction zone followed by a second delay. The reactive compounds are alternatively pulsed until a desired film or film thickness is formed on the substrate surface.

[0024] In one aspect, a tungsten nitride layer is deposited on a substrate surface by alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate surface. The term “compound” is intended to include one or more precursors, reductants, reactants, and catalysts. Each compound may be a single compound or a mixture/combination of two or more compounds. During deposition, the substrate should be maintained at a temperature of about 550° C. or more, such as between 550° C. and 700° C., at a process chamber pressure of between about 1 torr and about 10 torr. The tungsten-containing compound is introduced to the substrate surface at a rate between about 1 sccm (standard cubic centimeters per minute) and about 400 sccm, such as between about 10 sccm and about 100 sccm, and pulsed for about 1 second or less, such as about 0.2 seconds or less. The nitrogen-containing compound is introduced to the substrate surface at a rate between about 5 sccm to about 150 sccm, such as between about 5 sccm and about 25 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. In one aspect, argon is continuously provided as a carrier/purge gas at a rate between about 250 sccm and about 1000 sccm, such as between about 500 sccm and about 750 sccm. Each cycle, consisting of a pulse of the tungsten-containing compound and a pulse of the nitrogen-containing compound, forms between about 2 to about 3 angstroms of tungsten nitride, such as about 2.5 angstroms.

[0025] A “substrate surface”, as used herein, refers to any substrate surface upon which film processing is performed. For example, a substrate surface may include silicon, silicon oxide, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal alloys, and other conductive materials, depending on the application. A substrate surface may also include dielectric materials such as silicon dioxide and carbon doped silicon oxides.

[0026] FIG. 1 illustrates a schematic, partial cross section of an exemplary processing chamber 16 useful for depositing a tungsten nitride layer according to each of the embodiments of the present invention. Such a processing chamber 16 is available from Applied Materials, Inc. located in Santa Clara, Calif., and a brief description thereof follows. A more detailed description may be found in commonly assigned U.S. patent application Ser. No. 10/016,300, entitled “Lid Assembly For A Processing System To Facilitate Sequential Deposition Techniques”, filed on Dec. 12, 2001, which is incorporated herein by reference.

[0027] The processing chamber 16 may be integrated into an integrated processing platform, such as an Endura SL platform also available from Applied Materials, Inc. Details of the Endura SL platform are described in commonly assigned U.S. patent application Ser. No. 09/451,628, entitled “Integrated Modular Processing Platform”, filed on Nov. 30, 1999, which is incorporated by reference herein.

[0028] Referring to FIG. 1, the processing chamber 16 includes a chamber body 14, a lid assembly 20 for gas delivery, and a thermally controlled substrate support member 46. The thermally controlled substrate support member 46 includes a wafer support pedestal 48 connected to a support shaft 48a. The thermally controlled substrate support member 46 may be moved vertically within the chamber body 14 so that a distance between the support pedestal 48 and the lid assembly 20 may be controlled. An example of a lifting mechanism for the support pedestal 48 is described in detail in U.S. Pat. No. 5,951,776, issued Sep. 14, 1999 to Selyutin et al., entitled “Self-Aligning Lift Mechanism”, which is hereby incorporated by reference in it entirety.

[0029] The support pedestal 48 includes an embedded thermocouple 50athat may be used to monitor the temperature thereof. For example, a signal from the thermocouple 50amay be used in a feedback loop to control power applied to a heater element 52aby a power source 52. The heater element 52amay be a resistive heater element or other thermal transfer device disposed in or in contact with the pedestal 48 utilized to control the temperature thereof. Optionally, the support pedestal 48 may be heated using a heat transfer fluid (not shown).

[0030] The support pedestal 48 may be formed from any process-compatible material, including aluminum nitride and aluminum oxide (Al₂O₃or alumina) and may also be configured to hold a substrate thereon employing a vacuum, i.e. support pedestal 48 may be a vacuum chuck. Using a vacuum check, the support pedestal 48 may include a plurality of vacuum holes (not shown) that are placed in fluid communication with a vacuum source routed through the support shaft 48a.

[0031] The chamber body 14 includes a liner assembly 54 having a cylindrical portion and a planar portion. The cylindrical portion and the planar portion may be formed from any suitable material such as aluminum, ceramic and the like. The cylindrical portion surrounds the support pedestal 48. The cylindrical portion also includes an aperture 60 that aligns with the slit valve opening 44 disposed a side wall 14bof the housing 14 to allow entry and egress of substrates from the chamber 16.

[0032] The planar portion of the liner assembly 54 extends transversely to the cylindrical portion and is disposed against a chamber bottom 14aof the chamber body 14. The liner assembly 54 defines a chamber channel 58 between the chamber body 14 and both the cylindrical portion and planar portion of the liner assembly 54. Specifically, a first portion of channel 58 is defined between the chamber bottom 14aand planar portion of the liner assembly 54. A second portion of channel 58 is defined between the sidewall 14bof the chamber body 14 and the cylindrical portion of the liner assembly 54. A purge gas is introduced into the channel 58 to minimize unwanted deposition on the chamber walls and to control the rate of heat transfer between the chamber walls and the liner assembly 54.

[0033] The chamber body 14 also includes a pumping channel 62 disposed along the sidewalls 14bthereof. The pumping channel 62 includes a plurality of apertures, one of which is shown as a first aperture 62a. The pumping channel 62 includes a second aperture 62bthat is coupled to a pump system 18 by a conduit 66. A throttle valve 18ais coupled between the pumping channel 62 and the pump system 18. The pumping channel 62, the throttle valve 18a, and the pump system 18 control the amount of gas flow from the processing chamber 16. The size, number, and position of the apertures 62ain communication with the chamber 16 are configured to achieve uniform flow of gases exiting the lid assembly 20 over the support pedestal 48 having a substrate disposed thereon.

[0034] The lid assembly 20 includes a lid plate 20ahaving a gas manifold 34 mounted thereon. The lid plate 20aprovides a fluid tight seal with an upper portion of the chamber body 14 when in a closed position. The gas manifold 34 includes a plurality of control valves 32c(only one shown) to provide rapid and precise gas flow with valve open and close cycles of less than about one second, and in one embodiment, of less than about 0.1 second. The valves 32care surface mounted, electronically controlled valves. One valve that may be utilized is available from Fujikin of Japan as part number FR-21-6.35 UGF-APD. Other valves that operate at substantially the same speed and precision may also be used.

[0035] The lid assembly 20 further includes a plurality of gas sources 68a, 68b, 68c, each in fluid communication with one of the valves 32cthrough a sequence of conduits (not shown) formed through the chamber body 14, lid assembly 20, and gas manifold 34.

[0036] The processing chamber 16 further includes a reaction zone 100 that is formed within the chamber body 14 when the lid assembly 20 is in a closed position. Generally, the reaction zone 100 includes the volume within the processing chamber 16 that is in fluid communication with a wafer 102 disposed therein. The reaction zone 100, therefore, includes the volume downstream of each valve 32cwithin the lid assembly 20, and the volume between the support pedestal 48 and the lower surface of the lid plate 20. More particularly, the reaction zone 100 includes the volume between the outlet of the dosing valves 32cand an upper surface of the wafer 102.

[0037] A controller 70 regulates the operations of the various components of the processing chamber 16. The controller 70 includes a processor 72 in data communication with memory, such as random access memory 74 and a hard disk drive 76 and is in communication with at least the pump system 18, the power source 52, and the valve 32c.

[0038] Software routines are executed to initiate process recipes or sequences. The software routines, when executed, transform the general purpose computer into a specific process computer that controls the chamber operation so that a chamber process is performed. For example, software routines may be used to precisely control the activation of the electronic control valves for the execution of process sequences according to the present invention. Alternatively, the software routines may be performed in hardware, as an application specific integrated circuit or other type of hardware implementation, or a combination of software or hardware.

[0039] Barrier Layer Formation

[0040] FIG. 2 illustrates a process sequence 200 for depositing a tungsten nitride layer according to one embodiment of the present invention. As shown in step 202, a substrate is provided to the process chamber. The process chamber conditions, such as the temperature and pressure, for example, are adjusted to enhance the adsorption of the process gases on the substrate. The substrate should be maintained at a temperature of about 550° C. or more, such as between 550° C. and 700° C., at a process chamber pressure of between about 1 torr and about 10 torr.

[0041] A constant carrier gas stream is established within the process chamber as indicated in step 204. Carrier gases may be selected to also act as a purge gas for the removal of volatile reactants and/or by-products from the process chamber. Carrier gases such as, for example, helium (He), argon (Ar), nitrogen (N₂), hydrogen (H₂), among others, and combinations thereof may be used. In one aspect, argon is continuously provided at a rate between about 250 sccm and about 1000 sccm, such as between about 500 sccm and about 750 sccm.

[0042] Referring to step 206, after the carrier gas stream is established within the process chamber, a pulse of a tungsten-containing compound is added to the carrier gas stream. A “dose/pulse” as used herein is intended to refer to a quantity of a particular compound that is intermittently or non-continuously introduced into a reaction zone of a processing chamber. The quantity of a particular compound within each pulse may vary over time, depending on the duration of the pulse.

[0043] The duration of the pulse of the tungsten-containing compound is variable depending upon a number of factors such as, for example, the volume capacity of the process chamber employed, the vacuum system coupled thereto, and the volatility/reactivity of the particular precursor itself. For example, the tungsten-containing compound is introduced to the substrate surface at a rate between about 1 sccm (standard cubic centimeters per minute) and about 400 sccm, such as between about 10 sccm and about 100 sccm, and pulsed for about 1 second or less, such as about 0.2 seconds or less. More generally, the process conditions are advantageously selected so that a pulse of tungsten-containing compound provides a sufficient amount of volume to absorb at least a monolayer of the tungsten-containing material on the substrate. Thereafter, excess tungsten-containing compound remaining in the chamber is removed from the process chamber by the constant carrier gas stream in combination with the vacuum system.

[0044] In step 208, a pulse of a nitrogen-containing compound is added to the carrier gas stream after the excess tungsten-containing compound has been removed from the process chamber. The pulse of nitrogen-containing compound also lasts for a predetermined time that is variable depending upon a number of factors such as, for example, the volume capacity of the process chamber employed, the vacuum system coupled thereto and the volatility/reactivity of the particular precursor itself. For example, the nitrogen-containing compound is introduced to the substrate surface at a rate between about 5 sccm to about 150 sccm, such as between about 5 sccm and about 25 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. More generally, the duration of the pulse of nitrogen-containing compound should be long enough to adsorb at least a monolayer of the nitrogen-containing compound on the tungsten-containing material. Thereafter, excess nitrogen-containing compound remaining in the chamber is removed by the constant carrier gas stream in combination with the vacuum system.

[0045] The duration of each of the pulses of tungsten-containing compound and nitrogen-containing compound may also vary depending on the device geometry, the desired stoichiometry of the deposited layer, and the application of the deposited layer, for example. In one aspect, the duration of the pulse of tungsten-containing compound may be identical to the duration of the pulse of nitrogen-containing compound. In another aspect, the duration of the pulse of tungsten-containing compound may be shorter than the duration of the pulse of nitrogen-containing compound. In still another aspect, the duration of the pulse of tungsten-containing compound may be longer than the duration of the pulse of nitrogen-containing compound.

[0046] Additionally, the delays between each pulse of tungsten-containing compound and each pulse of nitrogen-containing compound may have the same duration. That is the duration of the period of non-pulsing between each pulse of the tungsten-containing compound and each pulse of the nitrogen-containing compound can be identical. For such an embodiment, a time interval of non-pulsing between the pulse of the tungsten-containing compound and the pulse of the nitrogen-containing compound is equal to a time interval of non-pulsing between the pulse of the nitrogen-containing compound and the pulse of the tungsten-containing precursor. During the time periods of non-pulsing only the constant carrier gas stream is provided to the process chamber.

[0047] The delays between each pulse of tungsten-containing compound and each pulse of nitrogen-containing compound may also have different durations. For example, the duration of the period of non-pulsing between each pulse of the tungsten-containing compound and each pulse of the nitrogen-containing compound may be shorter or longer than the duration of the period of non-pulsing between each pulse of the nitrogen-containing compound and the tungsten-containing precursor. For such an embodiment, a time interval of non-pulsing between the pulse of the tungsten-containing compound and the pulse of the nitrogen-containing compound is different from a time interval of non-pulsing between the pulse of the nitrogen-containing compound and the pulse of the tungsten-containing precursor. During the time periods of non-pulsing, only the constant carrier gas stream is provided to the process chamber.

[0048] Additionally, the time intervals for each pulse of the tungsten-containing precursor, the nitrogen-containing compound and the periods of non-pulsing therebetween for each deposition cycle may have the same duration. For such an embodiment, a time interval (T₁) for the tungsten-containing precursor, a time interval (T₂) for the nitrogen-containing compound, a time interval (T₃) of non-pulsing between the pulse of the tungsten-containing compound and the pulse of the nitrogen-containing compound and a time interval (T₄) of non-pulsing between the pulse of the nitrogen-containing compound and the pulse of the tungsten-containing compound each have the same value for each deposition cycle. For example, in a first deposition cycle (C₁), a time interval (T₁) for the pulse of the tungsten-containing compound has the same duration as the time interval (T₁) for the pulse of the tungsten-containing compound in a second deposition cycle (C₂). Similarly, the duration of each pulse of the nitrogen-containing compound and the periods of non-pulsing between the pulse of the tungsten-containing compound and the nitrogen-containing compound in deposition cycle (C₁) is the same as the duration of each pulse of the nitrogen-containing compound and the periods of non-pulsing between the pulse of the tungsten-containing compound and the nitrogen-containing compound in deposition cycle (C₂), respectively.

[0049] Additionally, the time intervals for at least one pulse of tungsten-containing precursor, at least one pulse of nitrogen-containing compound, and the delays therebetween for one or more of the deposition cycles of the tungsten deposition process may have different durations. For such an embodiment, one or more of the time intervals (T₁) for the pulses of the tungsten-containing precursor, the time intervals (T₂) for the pulses of the nitrogen-containing compound, the time intervals (T₃) of non-pulsing between the pulse of the tungsten-containing compound and the pulse of the nitrogen-containing compound and the time intervals (T₄) of non-pulsing between the pulse of the nitrogen-containing compound and the pulse of the tungsten-containing compound may have different values for one or more deposition cycles of the tungsten deposition process. For example, in a first deposition cycle (C₁), the time interval (T₁) for the pulse of the tungsten-containing compound may be longer or shorter than the time interval (T₁) for the pulse of the tungsten-containing compound in a second deposition cycle (C₂). Similarly, the duration of each pulse of the nitrogen-containing compound and the periods of non-pulsing between the pulse of the tungsten-containing compound and the nitrogen-containing compound in deposition cycle (C₁) may be the same or different than the duration of each pulse of the nitrogen-containing compound and the periods of non-pulsing between the pulse of the tungsten-containing compound and the nitrogen-containing compound in deposition cycle (C₂), respectively.

[0050] Referring to step 210, after each deposition cycle (steps 204 through 208) a thickness of tungsten nitride will be formed on the substrate. Depending on specific device requirements, subsequent deposition cycles may be needed to achieve a desired thickness. As such, steps 206 and 208 can be repeated until the desired thickness for the tungsten nitride layer is achieved. Thereafter, when the desired thickness is achieved the process is stopped as indicated by step 212. About 2 to about 3 angstroms of tungsten nitride, such as about 2.5 angstroms, is formed per cycle.

[0051] Exemplary tungsten-containing precursors for forming such tungsten layers may include tungsten hexafluoride (WF₆) and tungsten carbonyl (W(CO)₆), among others, as well as a combination thereof.

[0052] Exemplary nitrogen-containing compounds may include nitrogen gas, ammonia (NH₃), hydrazine (N₂H₄), monomethyl hydrazine (CH₃N₂H₃), dimethyl hydrazine (C₂H₆N₂H₂), t-butyl hydrazine (C₄H₉N₂H₃), phenyl hydrazine (C₆H₅N₂H₃), 2,2′-azoisobutane, ethylazide (C₂H₅N₃), among others, as well as combinations thereof.

[0053] In a particular process sequence 300 described with respect to FIG. 3, a tungsten nitride layer is deposited using separate pulses for each of the tungsten-containing compound, the nitrogen-containing compound, and argon. The deposition sequence 300 includes providing a substrate to the process chamber (step 302); heating the substrate to a temperature greater than 550° C., such as between 550° C. and 700° C. at a pressure less than or about 2 torr (step 304); providing a pulse of tungsten-containing compound (step 306); providing a first pulse of argon (step 308); providing a pulse of nitrogen-containing compound (step 310); providing a second pulse of argon (step 312); and then repeating steps 304 through 312 until a desired thickness of the tungsten nitride layer has been achieved. Thereafter, the process is stopped (step 316) when the desired thickness is achieved. About 2 to about 3 angstroms of titanium nitride is formed per cycle.

[0054] In FIGS. 2-3, the tungsten deposition cycle is depicted as beginning with a pulse of the tungsten-containing compound followed by a pulse of the nitrogen-containing compound. However, the tungsten deposition cycle may start with a pulse of the nitrogen-containing compound followed by a pulse of the tungsten-containing precursor. Regardless of the pulse sequences, each cycle consists of a pulse of the nitrogen-containing compound and a pulse of the tungsten-containing compound, and cycle is repeated until a desired film or film thickness is achieved.

[0055] FIG. 4 shows another process sequence 400 particularly useful for depositing a tungsten nitride barrier layer over a silicon surface. In general, a wafer having a silicon surface is exposed to a chlorine-containing compound, such as dichlorosilane (DCS) for example, prior to alternating pulses of a nitrogen-containing compound and a tungsten-containing compound. The DCS pre-treatment step provides a chlorine terminated silicon surface that resists the formation of tungsten silicide during subsequent exposure to a tungsten-containing compound. Tungsten silicide is undesirable because it increases the resistivity and overall contact resistance of the device.

[0056] The nitrogen-containing compound is introduced prior to the tungsten-containing compound to prevent the formation of tungsten silicide due to the reaction of tungsten with the silicon surface. It is believed that the nitrogen-containing compound forms one or more atomic layers of Si_xN_yprior to exposure of the tungsten-containing compound. It is then believed that the one or more atomic layers of Si_xN_yreacts with the tungsten-containing compound to form one or more atomic layers of WSi_xN_y. The one or more atomic layers of WSi_xN_yprovide a much more stable device that is resistant to tungsten diffusion/migration. In metal gate applications, for example, tungsten migration is to be avoided because tungsten atoms may diffuse through the polysilicon gate and come into contact with the dielectric layer, thereby shorting the metal gate.

[0057] Referring to FIG. 4, the deposition sequence 400 includes providing a substrate to the process chamber (step 402); heating the substrate to a temperature greater than 550° C., such as between 550° C. and 700° C. at a pressure less than or about 2 torr (step 404); soaking the substrate in DCS for about 5 seconds to about 1 minute (step 406); providing one or more pulses of ammonia (step 408); introducing a continuous carrier gas stream such as argon gas (step 410); providing a pulse of tungsten hexafluoride (step 412); providing a pulse of ammonia (step 414); and then repeating steps 412 through 414 or stopping the deposition process (step 418) depending on whether a desired thickness for the tungsten nitride layer has been achieved (step 416).

[0058] FIG. 4A shows an alternative process sequence 450 useful for depositing a tungsten nitride barrier layer over a silicon surface. The sequence 450 includes providing a substrate to the process chamber (step 452); heating the substrate to a temperature greater than 550° C., such as between 550° C. and 700° C. at a pressure less than or about 2 torr (step 454); soaking the substrate in DCS for about 5 seconds to about 1 minute (step 456); introducing a continuous carrier gas stream such as argon gas (step 458); providing a pulse of ammonia (step 460); providing a pulse of tungsten hexafluoride (step 462); and then repeating steps 460 through 462 or stopping the deposition process (step 466) depending on whether a desired thickness for the tungsten nitride layer has been achieved (step 466).

[0059] Tungsten Metal Gate

[0060] FIG. 5 shows a cross sectional view of an exemplary metal oxide gate device utilizing a tungsten nitride barrier layer according to the present invention. The device generally includes an exposed gate 510 surrounded by spacers 516 and silicon source/drain areas 520 formed within a substrate surface 512. The spacers 516 typically consist of an oxide, such as SiO₂.

[0061] The metal gate 510 includes an oxide layer 511, a polysilicon layer 514, a tungsten nitride layer 515, and a tungsten layer 522. The oxide layer 511, such as a SiO₂layer for example, separates the substrate 512 from the polysilicon layer 514. The oxide layer 511 and the polysilicon layer 514 are deposited using conventional deposition techniques.

[0062] The tungsten nitride layer 515 is deposited on the polysilicon layer 514 and is deposited using embodiments of a cyclical deposition technique described above with reference to FIGS. 2-4. In a particular embodiment, similar to the sequence described above with reference to FIG. 4, a process sequence for depositing the tungsten nitride layer 515 on the polysilicon layer 514 includes providing a substrate to the process chamber; heating the substrate to a temperature greater than 550° C., such as between 550° C. and 700° C. at a pressure less than or about 2 torr; soaking the substrate in DCS for about 5 seconds to about 1 minute; providing one or more pulses of ammonia; introducing a continuous carrier gas stream such as argon gas; providing a pulse of tungsten hexafluoride to the reaction zone; providing a pulse of ammonia to the reaction zone; and then repeating the pulses of tungsten hexafluoride and ammonia until a tungsten nitride layer having a thickness less than 100 angstroms has been formed.

[0063] A tungsten layer 522 is then deposited on the tungsten nitride layer 515. Although any metal deposition process, such as conventional chemical vapor deposition or physical vapor deposition for example, may be used, the tungsten layer 522 may be deposited by alternately adsorbing a tungsten-containing compound and a reducing gas, using a cyclical deposition technique similar to one described above with reference to FIGS. 2-4. Suitable tungsten-containing compounds include, for example, tungsten hexafluoride (WF₆) and tungsten carbonyl (W(CO)₆), among others. Suitable reducing gases include, for example, silane (SiH₄), disilane (Si₂H₆), dichlorosilane (SiCl₂H₂), borane (BH₃), diborane (B₂H₆), triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane, decaborane, and combinations thereof.

[0064] One exemplary process of depositing a tungsten layer includes sequentially providing pulses of tungsten hexafluoride (WF₆) and pulses of diborane (B₂H₆). The tungsten hexafluoride (WF₆) may be provided to an appropriate flow control valve at a flow rate of between about 10 sccm (standard cubic centimeters per minute) and about 400 sccm, such as between about 20 sccm and about 100 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. A carrier gas, such as argon, is provided along with the tungsten hexafluoride at a flow rate between about 250 sccm to about 1000 sccm, such as between about 500 sccm to about 750 sccm. The diborane (B₂H₆) may be provided to an appropriate flow control valve at a flow rate of between about 5 sccm and about 150 sccm, such as between about 5 sccm and about 25 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. A carrier gas, such as argon, is provided along with the diborane at a flow rate between about 250 sccm to about 1000 sccm, such as between about 500 sccm to about 750 sccm. The substrate is maintained at a temperature between about 250° C. and about 350° C. at a chamber pressure between about 1 torr and about 10 torr.

[0065] Another exemplary process of depositing a tungsten layer includes sequentially providing pulses of tungsten hexafluoride (WF₆) and pulses of silane (SiH₄). The tungsten hexafluoride (WF₆) is provided to an appropriate flow control valve at a flow rate of between about 10 sccm (standard cubic centimeters per minute) and about 400 sccm, such as between about 20 sccm and about 100 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. A carrier gas, such as argon, is provided along with the tungsten hexafluoride at a flow rate between about 250 sccm to about 1000 sccm, such as between about 300 sccm to about 500 sccm. The silane (SiH₄) is provided to an appropriate flow control valve at a flow rate of between about 10 sccm to about 500 sccm, such as between about 50 sccm to about 200 sccm, and thereafter pulsed for about 1 second or less, such as about 0.2 seconds or less. A carrier gas, such as argon, is provided along with the silane at a flow rate between about 250 sccm and about 1000 sccm, such as between about 300 sccm to about 500 sccm. A pulse of a purge gas, such as argon, at a flow rate between about 300 sccm to about 1000 sccm, such as between about 500 sccm to about 750 sccm, in pulses of about 1 second or less, such as about 0.3 seconds or less is provided between the pulses of the tungsten hexafluoride (WF₆) and the pulses of silane (SiH₄). The substrate is maintained at a temperature between about 300° C. to about 400° C. at a chamber pressure between about 1 torr and about 10 torr.

[0066] A more detailed description of tungsten deposition using a cyclical deposition technique may be found in commonly assigned U.S. patent application Ser. No. 10/016,300, entitled “Lid Assembly For A Processing System To Facilitate Sequential Deposition Techniques”, filed on Dec. 12, 2001; and in commonly assigned U.S. Patent Application No. 10/082,048, entitled “Deposition Of Tungsten Films For Dynamic Random Access Memory (DRAM) Application”, filed on Feb. 20, 2002, which are both incorporated herein by reference.

[0067] FIG. 6 shows another exemplary use of a tungsten nitride barrier layer. More particularly, FIG. 6 is a cross sectional view of a conventional DRAM device having a transistor 620 positioned adjacent a top portion of a trench capacitor 630. The access transistor 620 for the DRAM device 610 is positioned adjacent a top portion of the trench capacitor 630. Preferably, the access transistor 620 comprises an n-p-n transistor having a source region 622, a gate region 624, and a drain region 626. The gate region 624 comprises a P− doped silicon epi-layer disposed over the P+ substrate. The source region 622 of the access transistor 620 comprises an N+ doped material disposed on a first side of the gate region 624, and the drain region 626 comprises an N+ doped material disposed on a second side of the gate region 624, opposite the source region 622. The source region 622 is connected to an electrode of the trench capacitor.

[0068] The trench capacitor 630 generally comprises a first electrode 632, a second electrode 634 and a dielectric material 636 disposed therebetween. The P+ substrate serves as a first electrode 632 of the trench capacitor 630 and is connected to a ground connection. A trench 638 is formed in the P+ substrate and filled with a heavily doped N+ polysilicon which serves as the second electrode 634 of the trench capacitor 630. The dielectric material 636 is disposed between the first electrode 632 (i.e., P+ substrate) and the second electrode 634 (i.e., N+ polysilicon).

[0069] In one aspect, the trench capacitor 630 also includes a first tungsten nitride barrier layer 640 disposed between the dielectric material 636 and the first electrode 632. Preferably, a second tungsten nitride barrier layer 642 is disposed between the dielectric material 636 and the second electrode 634. Alternatively, the barrier layers 640, 642 are a combination film, such as W/WN. The barrier layers 640, 642 are deposited utilizing embodiments of the cyclical deposition techniques described herein.

[0070] Although the above-described DRAM device utilizes an n-p-n transistor, a P+ substrate as a first electrode, and an N+ polysilicon as a second electrode of the capacitor, other transistor designs and electrode materials are contemplated by the present invention to form DRAM devices. Additionally, other devices, such as crown capacitors for example, are contemplated by the present invention.

[0071] Embodiments of depositing a tungsten nitride barrier layer using cyclical deposition techniques described herein will be further described below in the following non-limiting example.

Example

[0072] A tungsten nitride barrier layer was deposited within a cyclical deposition chamber similar to the chamber described above with reference to FIG. 2. The tungsten nitride barrier layer was deposited on a polysilicon layer. The barrier layer was deposited at about 680° C. and about 1.5 torr. Argon was continuously introduced into the chamber at about 500 sccm. Pulses of tungsten hexafluoride and ammonia were alternately pulsed into the processing chamber, and 40 cycles were performed. Each pulse of tungsten hexafluoride had a rate of about 3 sccm and a duration of about 5 seconds. Each pulse of ammonia had a rate of about 300 sccm and a duration of about 20 seconds. The time delay between pulses was about 20 seconds. The deposition rate was about 2.5 angstroms per minute. The resulting tungsten nitride layer had a thickness of about 350 angstroms.

[0073] FIG. 7 shows an Auger profile showing the atomic concentration of the deposited tungsten nitride layer. It was surprisingly found that the cyclical deposition technique provided a substantially stoichiometric W₂N layer without the need for an additional thermal anneal post-treatment. Further, the deposited stoichiometric W₂N layer had a significantly reduced fluorine concentration compared to plasma enhanced chemical vapor deposition (PECVD) WN. The measured resistivity of the barrier layer was 380 μohms-cm, which is about 50 percent less than a comparable low pressure chemical vapor deposition (LPCVD) WN layer and about 60 percent less than a PVD WN layer.

[0074] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:

1. A method for forming a tungsten layer, comprising:

depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and

depositing a tungsten layer by alternately pulsing a second tungsten-containing compound and a reducing compound.

2. The method of claim 1, wherein the first tungsten-containing compound and the second tungsten-containing compound are each selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

3. The method of claim 1, wherein the first tungsten-containing compound and the second tungsten-containing compound both comprise tungsten hexafluoride.

4. The method of claim 1, wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.

5. The method of claim 1, wherein the nitrogen-containing compound comprises ammonia.

6. The method of claim 1, wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.

7. The method of claim 1, wherein the reducing compound comprises silane.

8. The method of claim 1, further comprising continuously flowing argon.

9. The method of claim 1, wherein the pulsing occurs at a pressure of about 1.5 Torr and a temperature of about 550° C. or more.

10. The method of claim 1, wherein each pulse of the first and second tungsten-containing compounds has a duration between about 0.2 seconds and about 1 second.

11. The method of claim 1, wherein each pulse of the nitrogen-containing compound has a duration between about 0.2 seconds and about 1 second.

12. The method of claim 1, wherein each pulse of the reducing compound has a duration between about 0.2 seconds and about 1 second.

13. The method of claim 1, wherein each pulse of the first and second tungsten-containing compounds has a flowrate between about 1 sccm and about 400 sccm.

14. The method of claim 1, wherein each pulse of the nitrogen-containing compound has a flowrate between about 5 sccm and about 150 sccm.

15. The method of claim 1, wherein each pulse of the reducing compound has a flowrate between about 5 sccm and about 150 sccm.

16. The method of claim 1, wherein the tungsten nitride barrier layer has a thickness of about 20 angstroms.

17. The method of claim 1, wherein the tungsten layer has a thickness greater than 300 angstroms.

18. The method of claim 1, further comprising pulsing argon between the alternate pulses of the first tungsten-containing compound and the nitrogen-containing compound.

19. The method of claim 1, further comprising pulsing argon between the alternate pulses of the second tungsten-containing compound and the reducing compound.

20. A method for forming a tungsten layer, comprising:

depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and

depositing a tungsten layer on the barrier layer.

21. The method of claim 20, wherein the tungsten layer is deposited by chemical vapor deposition or physical vapor deposition techniques.

22. The method of claim 20, wherein the tungsten layer is deposited by alternately pulsing a second tungsten-containing compound and a reducing compound.

23. The method of claim 22, wherein the tungsten layer is deposited by alternately pulsing the second tungsten-containing compound and the reducing compound to form a pre-layer having a thickness of about 50 angstroms or less followed by bulk tungsten deposition using chemical vapor deposition or physical vapor deposition.

24. The method claim 20, wherein the first tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

25. The method of claim 22, wherein the second tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

26. The method of claim 22, wherein the first tungsten-containing compound and the second tungsten-containing compound both comprise tungsten hexafluoride.

27. The method of claim 20, wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.

28. The method of claim 22, wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.

29. The method of claim 22, wherein the reducing compound comprises silane.

30. The method of claim 20, further comprising continuously flowing argon.

31. The method of claim 20, wherein the pulsing occurs at a pressure of about 1.5 Torr and a temperature of about 550° C. or more.

32. The method of claim 20, wherein the tungsten nitride barrier layer has a thickness less than 20 angstroms and the tungsten layer has a thickness greater than 300 angstroms.

33. A method for forming a metal gate electrode, comprising:

heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550° C. or more;

forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound;

depositing a tungsten nitride barrier layer over the polysilicon layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness less than about 50 angstroms is deposited; and

depositing a tungsten layer on the tungsten nitride barrier layer.

34. The method of claim 33, wherein the chlorine-containing compound comprises dichlorosilane.

35. The method of claim 33, wherein the nitrogen-containing compound is pulsed first and the first tungsten-containing compound is pulsed second.

36. The method of claim 33, wherein the tungsten layer is deposited by alternately pulsing a second tungsten-containing compound and a reducing compound.

37. The method of claim 33, wherein the tungsten layer is deposited by chemical vapor deposition or physical vapor deposition.

38. The method of claim 36, wherein the tungsten layer is deposited by alternately pulsing the second tungsten-containing compound and the reducing compound to form a pre-layer having a thickness of about 50 angstroms or less followed by chemical vapor deposition or physical vapor deposition to complete the tungsten layer.

39. The method of claim 33, wherein the tungsten layer has a thickness greater than 300 angstroms.

40. The method of claim 33, wherein the first tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

41. The method of claim 36, wherein the second tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

42. The method of claim 33, wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane ethylazide, and combinations thereof.

43. The method of claim 36, wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.

44. The method of claim 36, wherein the reducing compound comprises silane.

45. The method of claim 33, further comprising continuously flowing argon.

46. The method of claim 33, wherein the pulsing occurs at a pressure of about 1.5 Torr.

47. A method for forming a metal gate electrode on a wafer, comprising:

heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550°C. or more;

forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound;

reducing the chlorine terminated surface by exposing the polysilicon layer to a nitrogen-containing compound; and

depositing a tungsten layer over the polysilicon layer, wherein the tungsten layer is formed by alternately pulsing a tungsten-containing compound and a reducing compound.

48. The method of claim 47, further comprising depositing a tungsten nitride barrier layer over the polysilicon layer prior to depositing the tungsten layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing tungsten hexafluoride and ammonia until a tungsten nitride layer having a thickness less than 50 angstroms is deposited.

49. The method of claim 47, wherein the chlorine-containing compound comprises dichlorosilane.

50. The method of claim 47, wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.

51. The method of claim 47, wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.

52. The method of claim 47, wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.

53. The method of claim 47, wherein the tungsten layer has a thickness greater than 300 angstroms.

Patent Citations (440)

Patent	Date	Inventor	Cited By
US4058430(A)	1977-11-01	Suntola et al.	Applicant
US4389973(A)	1983-06-01	Suntola et al.	Applicant
US4413022(A)	1983-11-01	Suntola et al.	Applicant
US4486487(A)	1984-12-01	Skarp	Applicant
US4767494(A)	1988-08-01	Kobayashi et al.	Applicant
US4806321(A)	1989-02-01	Nishizawa et al.	Applicant
US4813846(A)	1989-03-01	Helms	Applicant
US4829022(A)	1989-05-01	Kobayashi et al.	Applicant
US4834831(A)	1989-05-01	Nishizawa et al.	Applicant
US4838983(A)	1989-06-01	Schumaker et al.	Applicant
US4838993(A)	1989-06-01	Aoki et al.	Applicant
US4840921(A)	1989-06-01	Matsumoto	Applicant
US4845049(A)	1989-07-01	Sunakawa	Applicant
US4859307(A)	1989-08-01	Nishizawa et al.	Applicant
US4859627(A)	1989-08-01	Sunakawa	Applicant
US4861417(A)	1989-08-01	Mochizuki et al.	Applicant
US4876218(A)	1989-10-01	Pessa et al.	Applicant
US4917556(A)	1990-04-01	Stark et al.	Applicant
US4927670(A)	1990-05-01	Erbil	Applicant
US4931132(A)	1990-06-01	Aspnes et al.	Applicant
US4951601(A)	1990-08-01	Maydan et al.	Applicant
US4960720(A)	1990-10-01	Shimbo	Applicant
US4975252(A)	1990-12-01	Nishizawa et al.	Applicant
US4993357(A)	1991-02-01	Scholz	Applicant
US5000113(A)	1991-03-01	Wang et al.	Applicant
US5013683(A)	1991-05-01	Petroff et al.	Applicant
US5028565(A)	1991-07-01	Chang et al.	Applicant
US5082798(A)	1992-01-01	Arimoto	Applicant
US5085885(A)	1992-02-01	Foley et al.	Applicant
US5091320(A)	1992-02-01	Aspnes et al.	Applicant
US5130269(A)	1992-07-01	Kitahara et al.	Applicant
US5166092(A)	1992-11-01	Mochizuki et al.	Applicant
US5173474(A)	1992-12-01	Connell et al.	Applicant
US5186718(A)	1993-02-01	Tepman et al.	Applicant
US5205077(A)	1993-04-01	Wittstock	Applicant
US5225366(A)	1993-07-01	Yoder	Applicant
US5234561(A)	1993-08-01	Randhawa et al.	Applicant
US5246536(A)	1993-09-01	Nishizawa et al.	Applicant
US5250148(A)	1993-10-01	Nishizawa et al.	Applicant
US5254207(A)	1993-10-01	Nishizawa et al.	Applicant
US5256244(A)	1993-10-01	Ackerman	Applicant
US5259881(A)	1993-11-01	Edwards et al.	Applicant
US5270247(A)	1993-12-01	Sakuma et al.	Applicant
US5278435(A)	1994-01-01	Van Hove et al.	Applicant
US5281274(A)	1994-01-01	Yoder	Applicant
US5286296(A)	1994-02-01	Sato et al.	Applicant
US5290748(A)	1994-03-01	Knuuttila et al.	Applicant
US5294286(A)	1994-03-01	Nishizawa et al.	Applicant
US5296403(A)	1994-03-01	Nishizawa et al.	Applicant
US5300186(A)	1994-04-01	Kitahara et al.	Applicant
US5306666(A)	1994-04-01	Iuzmi	Applicant
US5311055(A)	1994-05-01	Goodman et al.	Applicant
US5316615(A)	1994-05-01	Copel	Applicant
US5316793(A)	1994-05-01	Wallace et al.	Applicant
US5330610(A)	1994-07-01	Eres et al.	Applicant
US5336324(A)	1994-08-01	Stall et al.	Applicant
US5338389(A)	1994-08-01	Nishizawa et al.	Applicant
US5348911(A)	1994-09-01	Jurgensen et al.	Applicant
US5374570(A)	1994-12-01	Nasu et al.	Applicant
US5395791(A)	1995-03-01	Cheng et al.	Applicant
US5438952(A)	1995-08-01	Otsuka	Applicant
US5439876(A)	1995-08-01	Graf et al.	Applicant
US5441703(A)	1995-08-01	Jurgensen	Applicant
US5443033(A)	1995-08-01	Nishizawa et al.	Applicant
US5443647(A)	1995-08-01	Aucoin et al.	Applicant
US5455072(A)	1995-10-01	Bension et al.	Applicant
US5458084(A)	1995-10-01	Thorne et al.	Applicant
US5469806(A)	1995-11-01	Mochizuki et al.	Applicant
US5480818(A)	1996-01-01	Matsumoto et al.	Applicant
US5483919(A)	1996-01-01	Yokoyama et al.	Applicant
US5484664(A)	1996-01-01	Kitahara et al.	Applicant
US5503875(A)	1996-04-01	Imai et al.	Applicant
US5521126(A)	1996-05-01	Okamura et al.	Applicant
US5527733(A)	1996-06-01	Nishizawa et al.	Applicant
US5532511(A)	1996-07-01	Nishizawa et al.	Applicant
US5540783(A)	1996-07-01	Eres et al.	Applicant
US5580380(A)	1996-12-01	Liu et al.	Applicant
US5601651(A)	1997-02-01	Watabe	Applicant
US5609689(A)	1997-03-01	Kato et al.	Applicant
US5616181(A)	1997-04-01	Yamamoto et al.	Applicant
US5637530(A)	1997-06-01	Gaines et al.	Applicant
US5641984(A)	1997-06-01	Aftergut et al.	Applicant
US5644128(A)	1997-07-01	Wollnik et al.	Applicant
US5667592(A)	1997-09-01	Boitnott et al.	Applicant
US5674786(A)	1997-10-01	Turner et al.	Applicant
US5693139(A)	1997-12-01	Nishizawa et al.	Applicant
US5695564(A)	1997-12-01	Imahashi	Applicant
US5705224(A)	1998-01-01	Murota et al.	Applicant
US5707880(A)	1998-01-01	Aftergut et al.	Applicant
US5711811(A)	1998-01-01	Suntola et al.	Applicant
US5730801(A)	1998-03-01	Tepman et al.	Applicant
US5730802(A)	1998-03-01	Ishizumi et al.	Applicant
US5747113(A)	1998-05-01	Tsai	Applicant
US5749974(A)	1998-05-01	Habuka et al.	Applicant
US5788447(A)	1998-08-01	Yonemitsu et al.	Applicant
US5788799(A)	1998-08-01	Steger et al.	Applicant
US5796116(A)	1998-08-01	Nakata et al.	Applicant
US5801634(A)	1998-09-01	Young et al.	Applicant
US5807792(A)	1998-09-01	Ilg et al.	Applicant
US5830270(A)	1998-11-01	McKee et al.	Applicant
US5835677(A)	1998-11-01	Li et al.	Applicant
US5851849(A)	1998-12-01	Comizzoli et al.	Applicant
US5855675(A)	1999-01-01	Doering et al.	Applicant
US5855680(A)	1999-01-01	Soininen et al.	Applicant
US5856219(A)	1999-01-01	Naito et al.	Applicant
US5858102(A)	1999-01-01	Tsai	Applicant
US5866213(A)	1999-02-01	Foster et al.	Applicant
US5866795(A)	1999-02-01	Wang et al.	Applicant
US5879459(A)	1999-03-01	Gadgil et al.	Applicant
US5882165(A)	1999-03-01	Maydan et al.	Applicant
US5882413(A)	1999-03-01	Beaulieu et al.	Applicant
US5904565(A)	1999-05-01	Nguyen et al.	Applicant
US5916365(A)	1999-06-01	Sherman	Applicant
US5923056(A)	1999-07-01	Lee et al.	Applicant
US5923985(A)	1999-07-01	Aoki et al.	Applicant
US5925574(A)	1999-07-01	Aoki et al.	Applicant
US5928389(A)	1999-07-01	Jevtic	Applicant
US5942040(A)	1999-08-01	Kim et al.	Applicant
US5947710(A)	1999-09-01	Cooper et al.	Applicant
US5972430(A)	1999-10-01	DiMeo, Jr. et al.	Applicant
US6001669(A)	1999-12-01	Gaines et al.	Applicant
US6015590(A)	2000-01-01	Suntola et al.	Applicant
US6025627(A)	2000-02-01	Forbes et al.	Applicant
US6036773(A)	2000-03-01	Wang et al.	Applicant
US6042652(A)	2000-03-01	Hyun et al.	Applicant
US6043177(A)	2000-03-01	Falconer et al.	Applicant
US6051286(A)	2000-04-01	Zhao et al.	Applicant
US6062798(A)	2000-05-01	Muka	Applicant
US6071808(A)	2000-06-01	Merchant et al.	Applicant
US6084302(A)	2000-07-01	Sandhu	Applicant
US6086677(A)	2000-07-01	Umotoy et al.	Applicant
US6110556(A)	2000-08-01	Bang et al.	Applicant
US6113977(A)	2000-09-01	Soininen et al.	Applicant
US6117244(A)	2000-09-01	Bang et al.	Applicant
US6124158(A)	2000-09-01	Dautartas et al.	Applicant
US6130147(A)	2000-10-01	Major et al.	Applicant
US6139700(A)	2000-10-01	Kang et al.	Applicant
US6140237(A)	2000-10-01	Chan et al.	Applicant
US6140238(A)	2000-10-01	Kitch	Applicant
US6143659(A)	2000-11-01	Leem	Applicant
US6144060(A)	2000-11-01	Park et al.	Applicant
US6158446(A)	2000-12-01	Mohindra et al.	Applicant
US6174377(B1)	2001-01-01	Doering et al.	Applicant
US6174809(B1)	2001-01-01	Kang et al.	Applicant
US6200893(B1)	2001-03-01	Sneh	Applicant
US6203613(B1)	2001-03-01	Gates et al.	Applicant
US6206967(B1)	2001-03-01	Mak et al.	Applicant
US6207302(B1)	2001-03-01	Sugiura et al.	Applicant
US6207487(B1)	2001-03-01	Kim et al.	Applicant
US6248605(B1)	2001-06-01	Harkonen et al.	Applicant
US6270572(B1)	2001-08-01	Kim et al.	Applicant
US6271148(B1)	2001-08-01	Kao et al.	Applicant
US6284646(B1)	2001-09-01	Leem	Applicant
US6287965(B1)	2001-09-01	Kang et al.	Applicant
US6291876(B1)	2001-09-01	Stumborg et al.	Applicant
US6305314(B1)	2001-10-01	Sneh et al.	Examiner
US6306216(B1)	2001-10-01	Kim et al.	Applicant
US6316098(B1)	2001-11-01	Yitzchaik et al.	Applicant
US6333260(B1)	2001-12-01	Kwon	Applicant
US6342277(B1)	2002-01-01	Sherman	Applicant
US6355561(B1)	2002-03-01	Sandhu et al.	Applicant
US6358829(B2)	2002-03-01	Yoon et al.	Applicant
US6368954(B1)	2002-04-01	Lopatin et al.	Applicant
US6369430(B1)	2002-04-01	Adetutu et al.	Applicant
US6372598(B2)	2002-04-01	Kang et al.	Applicant
US6391785(B1)	2002-05-01	Satta et al.	Examiner
US6391803(B1)	2002-05-01	Kim et al.	Applicant
US6399491(B2)	2002-06-01	Jeon et al.	Applicant
US6416822(B1)	2002-07-01	Chiang et al.	Applicant
US6420189(B1)	2002-07-01	Lopatin	Applicant
US6423619(B1)	2002-07-01	Grant et al.	Applicant
US6428859(B1)	2002-08-01	Chiang et al.	Applicant
US6447933(B1)	2002-09-01	Wang et al.	Applicant
US6451695(B2)	2002-09-01	Sneh	Applicant
US6468924(B2)	2002-10-01	Lee et al.	Applicant
US6475276(B1)	2002-11-01	Elers et al.	Applicant
US6475910(B1)	2002-11-01	Sneh	Applicant
US6482262(B1)	2002-11-01	Elers et al.	Examiner
US6482733(B2)	2002-11-01	Raaijmakers et al.	Applicant
US6482740(B2)	2002-11-01	Soininen et al.	Applicant
US6511539(B1)	2003-01-01	Raaijmakers	Applicant
US6534395(B2)	2003-03-01	Werkhoven et al.	Applicant
US6599572(B2)	2003-07-01	Saanila et al.	Examiner
US2001/0000866(A1)	2001-05-01	Sneh et al.	Applicant
US2001/0002280(A1)	2001-05-01	Sneh	Applicant
US2001/0009140(A1)	2001-07-01	Bondestam et al.	Applicant
US2001/0009695(A1)	2001-07-01	Saanila et al.	Applicant
US2001/0011526(A1)	2001-08-01	Doering et al.	Applicant
US2001/0024387(A1)	2001-09-01	Raaijmakers et al.	Applicant
US2001/0028924(A1)	2001-10-01	Sherman	Applicant
US2001/0029094(A1)	2001-10-01	Mee-Young et al.	Applicant
US2001/0031562(A1)	2001-10-01	Raaijmakers et al.	Applicant
US2001/0034123(A1)	2001-10-01	Jeon et al.	Applicant
US2001/0041250(A1)	2001-11-01	Werkhoven et al.	Applicant
US2001/0042799(A1)	2001-11-01	Kim et al.	Applicant
US2001/0054730(A1)	2001-12-01	Kim et al.	Applicant
US2001/0054769(A1)	2001-12-01	Raiijmakers et al.	Applicant
US2002/0000598(A1)	2002-01-01	Kang et al.	Applicant
US2002/0004293(A1)	2002-01-01	Soininen et al.	Applicant
US2002/0007790(A1)	2002-01-01	Park	Applicant
US2002/0016084(A1)	2002-02-01	Todd	Applicant
US2002/0019121(A1)	2002-02-01	Pyo	Applicant
US2002/0031618(A1)	2002-03-01	Sherman	Applicant
US2002/0037630(A1)	2002-03-01	Agarwal et al.	Applicant
US2002/0047151(A1)	2002-04-01	Kim et al.	Applicant
US2002/0048880(A1)	2002-04-01	Lee	Applicant
US2002/0052097(A1)	2002-05-01	Park	Applicant
US2002/0055235(A1)	2002-05-01	Agarwal et al.	Applicant
US2002/0061612(A1)	2002-05-01	Sandhu et al.	Applicant
US2002/0068458(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0073924(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076481(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076507(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076508(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076837(A1)	2002-06-01	Hujanen et al.	Applicant
US2002/0090829(A1)	2002-07-01	Sandhu et al.	Applicant
US2002/0094689(A1)	2002-07-01	Park	Applicant
US2002/0104481(A1)	2002-08-01	Chiang et al.	Applicant
US2002/0105088(A1)	2002-08-01	Yang et al.	Applicant
US2002/0106846(A1)	2002-08-01	Seutter et al.	Applicant
US2002/0109168(A1)	2002-08-01	Kim et al.	Applicant
US2002/0117399(A1)	2002-08-01	Chen et al.	Applicant
US2002/0121697(A1)	2002-09-01	Marsh	Applicant
US2002/0144655(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0144657(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0146511(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0155722(A1)	2002-10-01	Satta et al.	Applicant
US2002/0162506(A1)	2002-11-01	Sneh et al.	Applicant
US2002/0164421(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0164423(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0182320(A1)	2002-12-01	Leskela et al.	Applicant
US2002/0187256(A1)	2002-12-01	Elers et al.	Applicant
US2002/0187631(A1)	2002-12-01	Kim et al.	Applicant
US2002/0197402(A1)	2002-12-01	Chiang et al.	Applicant
US2003/0013320(A1)	2003-01-01	Kim et al.	Applicant
US2003/0031807(A1)	2003-02-01	Elers et al.	Applicant
US2003/0032281(A1)	2003-02-01	Werkhoven et al.	Applicant
US2003/0049942(A1)	2003-03-01	Haukka et al.	Applicant
US2003/0072975(A1)	2003-04-01	Shero et al.	Applicant
US2003/0082296(A1)	2003-05-01	Elers et al.	Applicant
DE19627017(A1)	1997-01-01		Applicant
DE19820147(A1)	1999-07-01		Applicant
EP344352(A1)	1988-06-01		Applicant
EP442290(A1)	1991-02-01		Applicant
EP429270(A2)	1991-05-01		Applicant
EP799641(A2)	1997-10-01		Applicant
EP1167569	2002-01-01		Applicant
FR2.626.110	1989-07-01		Applicant
FR2.692.597	1993-12-01		Applicant
GB2355727(A)	2001-05-01		Applicant
JP58-098917	1983-06-01		Applicant
JP58-100419	1983-06-01		Applicant
JP60-065712(A)	1985-04-01		Applicant
JP61-035847	1986-02-01		Applicant
JP61-210623	1986-09-01		Applicant
JP62-069508	1987-03-01		Applicant
JP62-091495	1987-04-01		Applicant
JP62-141717	1987-06-01		Applicant
JP62-167297	1987-07-01		Applicant
JP62-171999	1987-07-01		Applicant
JP62-232919	1987-10-01		Applicant
JP63-062313	1988-03-01		Applicant
JP63-085098	1988-04-01		Applicant
JP63-090833	1988-04-01		Applicant
JP63-222420	1988-09-01		Applicant
JP63-222421	1988-09-01		Applicant
JP63-227007	1988-09-01		Applicant
JP63-252420	1988-10-01		Applicant
JP63-266814	1988-11-01		Applicant
JP64-009895	1989-01-01		Applicant
JP64-009896	1989-01-01		Applicant
JP64-009897	1989-01-01		Applicant
JP64-037832	1989-02-01		Applicant
JP64-082615	1989-03-01		Applicant
JP64-082617	1989-03-01		Applicant
JP64-082671	1989-03-01		Applicant
JP64-082676	1989-03-01		Applicant
JP1-103982	1989-04-01		Applicant
JP1-103996	1989-04-01		Applicant
JP64-090524	1989-04-01		Applicant
JP1-117017	1989-05-01		Applicant
JP1-143221	1989-06-01		Applicant
JP1-143233	1989-06-01		Applicant
JP1-154511	1989-06-01		Applicant
JP1-236657	1989-09-01		Applicant
JP1-245512	1989-09-01		Applicant
JP1-264218	1989-10-01		Applicant
JP1-270593	1989-10-01		Applicant
JP1-272108	1989-10-01		Applicant
JP1-290221	1989-11-01		Applicant
JP1-290222	1989-11-01		Applicant
JP1-296673	1989-11-01		Applicant
JP1-303770	1989-12-01		Applicant
JP1-305894	1989-12-01		Applicant
JP1-313927	1989-12-01		Applicant
JP2-012814	1990-01-01		Applicant
JP2-014513	1990-01-01		Applicant
JP2-017634	1990-01-01		Applicant
JP2-063115	1990-03-01		Applicant
JP2-074029	1990-03-01		Applicant
JP2-074587	1990-03-01		Applicant
JP2-106822	1990-04-01		Applicant
JP2-129913	1990-05-01		Applicant
JP2-162717	1990-06-01		Applicant
JP2-172895	1990-07-01		Applicant
JP2-196092	1990-08-01		Applicant
JP2-203517	1990-08-01		Applicant
JP2-230690	1990-09-01		Applicant
JP2-230722	1990-09-01		Applicant
JP2-246161	1990-10-01		Applicant
JP2-264491	1990-10-01		Applicant
JP2-283084	1990-11-01		Applicant
JP2-304916	1990-12-01		Applicant
JP3-019211	1991-01-01		Examiner
JP3-022569	1991-01-01		Examiner
JP3-023294	1991-01-01		Examiner
JP3-023299	1991-01-01		Examiner
JP3-044967	1991-02-01		Examiner
JP3-048421	1991-03-01		Examiner
JP3-070124	1991-03-01		Examiner
JP3-185716	1991-08-01		Examiner
JP3-208885	1991-09-01		Examiner
JP3-234025	1991-10-01		Examiner
JP3-286522	1991-12-01		Examiner
JP3-286531	1991-12-01		Examiner
JP4-031391	1992-02-01		Examiner
JP4-031396	1992-02-01		Examiner
JP4-100292	1992-04-01		Examiner
JP4-111418	1992-04-01		Examiner
JP4-132214	1992-05-01		Examiner
JP4-132681	1992-05-01		Examiner
JP4/151822	1992-05-01		Examiner
JP4-162418	1992-06-01		Examiner
JP4-175299	1992-06-01		Examiner
JP4-186824	1992-07-01		Examiner
JP4-212411	1992-08-01		Examiner
JP4-260696	1992-09-01		Applicant
JP4-273120	1992-09-01		Applicant
JP4-285167	1992-10-01		Applicant
JP4-291916	1992-10-01		Applicant
JP4-325500	1992-11-01		Applicant
JP4-328874	1992-11-01		Applicant
JP5-029228	1993-02-01		Applicant
JP5-047665	1993-02-01		Applicant
JP5-047666	1993-02-01		Applicant
JP5-047668	1993-02-01		Applicant
JP5-074717	1993-03-01		Applicant
JP5-074724	1993-03-01		Applicant
JP5-102189	1993-04-01		Applicant
JP5-160152	1993-06-01		Applicant
JP5-175143	1993-07-01		Applicant
JP5-175145	1993-07-01		Applicant
JP5-182906	1993-07-01		Applicant
JP5-186295	1993-07-01		Applicant
JP5-206036	1993-08-01		Applicant
JP5-234899	1993-09-01		Applicant
JP5-235047	1993-09-01		Applicant
JP5-251339	1993-09-01		Applicant
JP5-270997	1993-10-01		Applicant
JP5-283336	1993-10-01		Applicant
JP5-291152	1993-11-01		Applicant
JP5-304334	1993-11-01		Applicant
JP5-343327	1993-12-01		Applicant
JP5-343685	1993-12-01		Applicant
JP6-045606	1994-02-01		Applicant
JP6-132236	1994-05-01		Applicant
JP6-177381	1994-06-01		Applicant
JP6-196809	1994-07-01		Applicant
JP6-222388	1994-08-01		Applicant
JP6-224138	1994-08-01		Applicant
JP6-230421	1994-08-01		Applicant
JP6-252057	1994-09-01		Applicant
JP6-291048	1994-10-01		Applicant
JP7-070752	1995-03-01		Applicant
JP7-086269	1995-03-01		Applicant
JP8-181076	1996-07-01		Applicant
JP8-245291	1996-09-01		Applicant
JP8-264530	1996-10-01		Applicant
JP9-260786	1997-10-01		Applicant
JP9-293681	1997-11-01		Applicant
JP10-188840	1998-07-01		Applicant
JP10-190128	1998-07-01		Applicant
JP10-308283	1998-11-01		Applicant
JP11-269652	1999-10-01		Applicant
JP2000-031387	2000-01-01		Applicant
JP2000-058777	2000-02-01		Applicant
JP2000-068072	2000-03-01		Applicant
JP2000-087029	2000-03-01		Applicant
JP2000-319772	2000-03-01		Applicant
JP2000-138094	2000-05-01		Applicant
JP2000-178735	2000-06-01		Applicant
JP2000-218445	2000-08-01		Applicant
JP2000-319772	2000-11-01		Applicant
JP2000-340883	2000-12-01		Applicant
JP2000-353666	2000-12-01		Applicant
JP2001-111000	2000-12-01		Applicant
JP2001-020075	2001-01-01		Applicant
JP2001-62244	2001-03-01		Applicant
JP2001-152339	2001-06-01		Applicant
JP2001-172767	2001-06-01		Applicant
JP2001-189312	2001-07-01		Applicant
JP2001-217206	2001-08-01		Applicant
JP2001-220287	2001-08-01		Applicant
JP2001-220294	2001-08-01		Applicant
JP2001-240972	2001-09-01		Applicant
JP2001-254181	2001-09-01		Applicant
JP2001-284042	2001-10-01		Applicant
JP2001-303251	2001-10-01		Applicant
JP2001-328900	2001-11-01		Applicant
WO90/02216	1990-03-01		Applicant
WO91/10510	1991-07-01		Applicant
WO93/0211	1993-02-01		Applicant
WO96/17107	1996-06-01		Applicant
WO96/18756	1996-06-01		Applicant
WO98/06889	1998-02-01		Applicant
WO98/51838	1998-11-01		Applicant
WO99/13504	1999-03-01		Applicant
WO99/29924	1999-06-01		Applicant
WO99/41423	1999-08-01		Applicant
WO/11721	2000-03-01		Applicant
WO/15865	2000-03-01		Applicant
WO/15881(A2)	2000-03-01		Applicant
WO/16377(A2)	2000-03-01		Applicant
WO2/067319	2000-08-01		Applicant
WO/54320(A1)	2000-09-01		Applicant
WO/63957(A1)	2000-10-01		Applicant
WO/79019(A1)	2000-12-01		Applicant
WO/79576(A1)	2000-12-01		Applicant
WO1/15220(A1)	2001-03-01		Applicant
WO1/15220	2001-03-01		Applicant
WO1/17692	2001-03-01		Applicant
WO1/27346(A1)	2001-04-01		Applicant
WO1/27347(A1)	2001-04-01		Applicant
WO1/29280(A1)	2001-04-01		Applicant
WO1/29891(A1)	2001-04-01		Applicant
WO1/29893(A1)	2001-04-01		Applicant
WO1/36702(A1)	2001-05-01		Applicant
WO1/40541(A1)	2001-06-01		Applicant
WO1/66832(A2)	2001-09-01		Applicant
WO2/45167	2002-06-01		Applicant

Non-Patent Literature (45)

Yang, et al. “Atomic Layer Deposition of Tungsten Film from WF6/B2H6: Nucleation Layer for Advanced Semiconductor Device,” Conference Proceedings ULSI XVII (2002) Materials Research Society no page numbers.Applicant
Hultman, et al., “Review of the thermal and mechanical stability of TiN-based thin films”, Zeltschrift Fur Metallkunde, 90(10) (Oct. 1999), pp. 803-813.Applicant
Klaus, et al., “Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions”, Surface Review & Letters, 6(3/4) (1999), pp. 435-448.Applicant
Yamaguchi, et al., “Atomic-layer chemical-vapor-deposition of silicon dioxide films with extremely low hydrogen content”, Appl. Surf. Sci., vol. 130-132 (1998), pp. 202-207.Applicant
George, et al., “Surface Chemistry for Atomic Layer Growth”, J. Phys. Chem., vol. 100 (1996), pp. 13121-13131.Applicant
George, et al., “Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry”, Appl. Surf. Sci., vol. 82/83 (1994), pp. 460-467.Applicant
Wise, et al., “Diethyldiethoxysilane as a new precursor for SiO2 growth on silicon”, Mat. Res. Soc. Symp. Proc., vol. 334 (1994), pp. 37-43.Applicant
Niinisto, et al., “Synthesis of oxide thin films and overlayers by atomic layer epitaxy for adcanced applications”, Mat. Sci. & Eng., vol. B41 (1996), pp. 23-29.Applicant
Ritala, et al.,“Perfectly conformal TiN and Al2O3 films deposited by atomic layer deposition”, Chemical Vapor Deposition, vol. 5(1) (Jan. 1999), pp. 7-9.Applicant
Klaus, et al., “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions”. Appl. Surf. Sci., vol. 162-163 (Jul. 1999), pp. 479-491.Applicant
Klaus, et al., “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions”, Fifth Int'l Symp. On Atomically Controlled Surfaces, Interfaces and Nanostructures (Jul. 6-9, 1999), Aix en Provence, France no page numbers.Applicant
Min, et al., “Atomic layer deposition of TiN thin films by sequential introduction of Ti precursor and NH/sub3/”, Symp.: Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits (Apr. 13-16, 1998), pp. 337-342.Applicant
Min, et al., “Metal-Organic Atomic-Layer Deposition of Titanium-Silicon-Nitride Films”, Applied Physics Letters, American Inst. Of Physics, vol. 75(11) (Sep. 13, 1999) no page numbers.Applicant
Maertensson, et al., “Atomic Layer Epitaxy of Copper on Tantalum”, Chemical Vapor Deposition, 3(1) (Feb. 1, 1997), pp. 45-50.Applicant
Ritala, et al. “Atomic Layer Epitaxy Growth of TiN Thin Films”, J. Electrochem. Soc., 142(8) (Aug. 1995); pp. 2731-2737.Applicant
Elers, et al., “NbC15 as a precursor in atomic layer epitaxy”, Appl. Surf. Sci., vol. 82/83 (1994), pp. 468-474.Applicant
Lee, “The Preparation of Titanium-Based Thin Film by CVD Using Titanium Chlorides as precursors”, Chemical Vapor Deposition, 5(2) (Mar. 1999), pp. 69-73.Applicant
Martensson, et al., “Atomic Layer Epitaxy of Copper, Growth & Selectivity in the Cu (II)-2,2.6,6-Tetramethyl-3, 5-Heptanedion ATE/H2 Process”, J. Electrochem. Soc., 145(8) (Aug. 1998), pp. 2926-2931.Applicant
Min, et al.,“Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply”, Mat. Res. Soc. Symp. Proc., vol. 564 (Apr. 5, 1999), pp. 207-210.Applicant
Bedair, “Atomic layer epitaxy deposition processes”, J. Vac. Sci. Techol. 12(1) (Jan./Feb. 1994) No page numbers.Applicant
Yamaga, et al., “Atomic layer epitaxy of ZnS by a new gas supplying system in a low-pressure metalorganic vapor phase epitaxy”, J. of Crystal Growth 117 (1992), pp. 152-155.Applicant
Ohba, et al., “Thermal Decomposition of Methylhydrazine and Deposition Properties of CVD TiN Thin Films”, Conference Proceedings, Advanced Metallization for ULSI Applications in 1993 (1994), pp. 143-149.Applicant
Scheper, et al.,“Low-temperature deposition of titanium nitride films from dialkylhydrazine-based precursors”, Materials Science in Semiconductor Processing 2 (1999), pp. 149-157.Applicant
Suzuki, et al., “A 0.2-μm contact filing by 450° C.-hydrazine-reduced TiN film with low resistivity”, IEDM 92-979, pp. 11.8.1-11.8.3 No date available.Applicant
Suzuki, et al., “LPCVD-TiN Using Hydrazine and TiCl4”, VMIC Conference (Jun. 8-9, 1993), pp. 418-423.Applicant
IBM Tech. Disc. Bull. Knowledge-Based Dynamic Scheduler in Distributed Computer Control, (Jun. 1990), pp. 80-84.Applicant
IBM Tech. Disc. Bull. “Multiprocessor and Multitasking Architecture for Tool Control of the Advanced via Inspection Tools” (May 1992), pp. 190-191.Applicant
McGeachin, S., “Synthesis and properties of some β-diketimines derived from acetylacetone, and their metal complexes”, Canadian J. of Chemistry, vol. 46 (1968), pp. 1903-1912.Applicant
Solanki, et al., “Atomic Layer deposition of Copper Seed Layers”, Electrochemical and Solid State Letters, 3(10) (2000), pp. 479-480.Applicant
NERAC.COM Retro Search: Atomic Layer Deposition of Copper, dated Oct. 11, 2001 no page numbers.Applicant
NERAC.COM Retro Search: Atomic Layer Deposition / Epitaxy Aluminum Oxide Plasma, dated Oct. 2, 2001 no page numbers.Applicant
NERAC Search abstract of“Atomic Layer deposition of Ta and Ti for Interconnect Diffusion Barriers”, by Rossnagel, et al., J. Vac. Sci. & Tech., 18(4) (Jul. 2000).Applicant
Abstracts of articles re atomic layer deposition No date or page numbers.Applicant
Abstracts of search results re atomic layer deposition, search dated Jan. 24, 2002 No page numbers.Applicant
Abstracts of articles re atomic layer deposition and atomic layer nucleation No date or page numbers.Applicant
Abstracts of articles re atomic layer deposition and semiconductors and copper No date or page numbers.Applicant
Abstracts of articles—atomic layer deposition No date or page numbers.Applicant
NERAC Search—Atomic Layer Deposition, search dated Oct. 16, 2001 No page numbers.Applicant
Bader, et al., “Integrated Processing Equipment”, Solid State Technology, Cowan Pub., vol. 33, No. 5 (May 1, 1990), pp. 149-154.Applicant
Choi, et al., “The effect of annealing on resistivity of low pressure chemical vapor depositied titanium diboride”, J. Appl. Phys. 69(11) (Jun. 1, 1991), pp. 7853-7861.Applicant
Choi, et al., “Stability of TiB2 as a Diffusion Barrier on Silicon”, J. Electrochem. Soc. 138(10) (Oct. 1991), pp. 3062-3067.Applicant
“Cluster Tools for Fabrication of Advanced devices” Jap. J. of Applied Physics, Extended Abstracts, 22nd Conference Solid State Devices and Materials (1990), pp. 849-852 XP000178141.Applicant
“Applications of Integrated processing”, Solid State Technology, US, Cowan Pub., vol. 37, No. 12 (Dec. 1, 1994), pp. 45-47.Applicant
Kitigawa, et al., “Hydrogen-mediated low temperature epitaxy of Si in plasma-enhanced chemical vapor deposition”, Applied Surface Science (2000), pp. 30-34.Applicant
Lee, et al., “Pulsed nucleation for ultra-high aspect ratio tungsten plugfill”, Novellus Systems, Inc. (2001), pp. 1-2 (Copy Not Available to Applicant at This Time).Applicant

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