US 7,208,413 B2Grant

Formation of boride barrier layers using chemisorption techniques

Issue Date:2007-04-24

•28 Claims

•8 Drawing Sheets

Abstract

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

Metadata

Assignee

Applied Materials, Inc.

Inventors

Jeong Soo Byun
Alfred Mak

Application Information

Application Number:US 10/993,925

Filing Date:2004-11-19

Priority Date:2000-06-27

Art Unit:2813

Classifications

IPC:

H01L21/44

Patent Drawings (8 sheets)

Description

Cross-Reference to Related Applications

[0001] This application is a continuation of U.S. patent application Ser. No. 10/387,990, filed Mar. 13, 2003, which is now U.S. Pat. No. 6,831,004 which is a continuation of U.S. Ser. No. 09/604,943 U.S. Pat. No. 6,620,723, filed Jun. 27, 2000, which are both herein incorporated by reference.

Background of the Invention

[0002] 1. Field of the Invention

[0003] The present invention relates to the formation of boride barrier layers and, more particularly to boride barrier layers formed using chemisorption techniques.

[0004] 2. Description of the Related Art

[0005] In the manufacture of integrated circuits, barrier layers are often used to inhibit the diffusion of metals and other impurities into regions underlying such barrier layers. These underlying regions may include transistor gates, capacitor dielectric, semiconductor substrates, metal lines, as well as many other structures that appear in integrated circuits.

[0006] For the current subhalf-micron (0.5 μm) generation of semiconductor devices, any microscopic reaction at an interface between interconnection layers can cause degradation of the resulting integrated circuits (e.g., increase the resistivity of the interconnection layers). Consequently, barrier layers have become a critical component for improving the reliability of interconnect metallization schemes.

[0007] Compounds of refractory metals such as, for example, nitrides, borides, and carbides have been suggested as diffusion barriers because of their chemical inertness and low resistivity (e.g., resistivity typically less than about 200 μΩ-cm). In particular, borides such as, for example, titanium diboride (TiB₂) have been suggested for use as a barrier material since layers formed thereof generally have low resistivity (e.g., resistivity less than about 150 μΩ-cm).

[0008] Boride barrier layers are typically formed using chemical vapor deposition (CVD) techniques. For example, titanium tetrachloride (TiCl₄) may be reacted with diborane (B₂H₆) to form titanium diboride (TiB₂) using CVD. However, when Cl-based chemistries are used to form boride barrier layers, reliability problems can occur. In particular, boride layers formed using CVD chlorine-based chemistries typically have a high chlorine (Cl) content (e.g., chlorine content greater than about 3%). A high chlorine content is undesirable because the chlorine may migrate from the boride barrier layer into adjacent interconnection layers, which can increase the contact resistance of such interconnection layers and potentially change the characteristics of integrated circuits made therefrom.

[0009] Therefore, a need exists in the art for reliable boride barrier layers for integrated circuit fabrication. Particularly desirable would be reliable boride barrier layers useful for interconnect structures.

Summary of the Invention

[0010] Boride barrier layers for integrated circuit fabrication are provided. In one embodiment, the boride barrier layer comprises one refractory metal. The boride barrier layer may be formed by sequentially chemisorbing alternating monolayers of a boron compound and a refractory metal compound onto a substrate.

[0011] In an alternate embodiment, a composite boride barrier layer is formed. The composite boride barrier layer comprises two or more refractory metals. The composite boride barrier layer may be formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds onto a substrate.

[0012] The boride barrier layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the boride barrier layer comprises one refractory metal. The boride barrier layer is formed by sequentially chemisorbing alternating monolayers of a boron compound and one refractory metal compound on a substrate. Thereafter, one or more metal layers are deposited on the boride barrier layer to form an interconnect structure.

[0013] In another integrated circuit fabrication process, the boride barrier layer has a composite structure. The composite boride barrier layer comprises two or more refractory metals. The composite boride barrier layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate. Thereafter, one or more metal layers are deposited on the composite boride barrier layer to form an interconnect structure.

Brief Description of the Drawings

[0014] The teachings of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which:

[0015] FIG. 1 depicts a schematic illustration of an apparatus that can be used for the practice of embodiments described herein;

[0016] FIGS. 2a–2c depict cross-sectional views of a substrate structure at different stages of integrated circuit fabrication incorporating a boride barrier layer;

[0017] FIGS. 3a–3c depict cross-sectional views of a substrate undergoing a first sequential chemisorption process of a boron compound and one refractory metal compound to form a boride barrier layer;

[0018] FIGS. 4a–4d depict cross-sectional views of a substrate undergoing a second sequential chemisorption process of a boron compound and two refractory metal compounds to form a composite boride barrier layer;

[0019] FIGS. 5a–5d depict cross-sectional views of a substrate undergoing a third sequential chemisorption of a boron compound and two refractory metal compounds to form a composite boride barrier layer; and

[0020] FIGS. 6a–6c depict cross-sectional views of a substrate structure at different stages of integrated circuit fabrication incorporating more than one boride barrier layer.

Detailed Description

[0021] FIG. 1 depicts a schematic illustration of a wafer processing system 10 that can be used to form boride barrier layers in accordance with embodiments described herein. The system 10 comprises a process chamber 100, a gas panel 130, a control unit 110, along with other hardware components such as power supplies 106 and vacuum pumps 102. The salient features of process chamber 100 are briefly described below.

Chamber 100

[0022] The process chamber 100 generally houses a support pedestal 150, which is used to support a substrate such as a semiconductor wafer 190 within the process chamber 100. Depending on the specific process, the semiconductor wafer 190 can be heated to some desired temperature prior to layer formation.

[0023] In chamber 100, the wafer support pedestal 150 is heated by an embedded heater 170. For example, the pedestal 150 may be resistively heated by applying an electric current from an AC power supply 106 to the heater element 170. The wafer 190 is, in turn, heated by the pedestal 150, and can be maintained within a desired process temperature range of, for example, about 20° C. to about 500° C.

[0024] A temperature sensor 172, such as a thermocouple, is also embedded in the wafer support pedestal 150 to monitor the temperature of the pedestal 150 in a conventional manner. For example, the measured temperature may be used in a feedback loop to control the electric current applied to the heater element 170 by the power supply 106, such that the wafer temperature can be maintained or controlled at a desired temperature that is suitable for the particular process application. The pedestal 150 is optionally heated using radiant heat (not shown).

[0025] A vacuum pump 102 is used to evacuate process gases from the process chamber 100 and to help maintain the desired pressure inside the chamber 100. An orifice 120 is used to introduce process gases into the process chamber 100. The dimensions of the orifice 120 are variable and typically depend on the size of the process chamber 100.

[0026] The orifice 120 is coupled to a gas panel 130 via a valve 125. The gas panel 130 provides process gases from two or more gas sources 135, 136 to the process chamber 100 through orifice 120 and valve 125. The gas panel 130 also provides a purge gas from a purge gas source 138 to the process chamber 100 through orifice 120 and valve 125.

[0027] A control unit 110, such as a computer, controls the flow of various process gases through the gas panel 130 as well as valve 125 during the different steps of a wafer process sequence. Illustratively, the control unit 110 comprises a central processing unit (CPU) 112, support circuitry 114, and memories containing associated control software 116. In addition to the control of process gases through the gas panel 130, the control unit 110 is also responsible for automated control of the numerous steps required for wafer processing—such as wafer transport, temperature control, chamber evacuation, among other steps.

[0028] The control unit 110 may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The computer processor may use any suitable memory, such as random access memory, read only memory, floppy disk drive, hard disk, or any other form of digital storage, local or remote. Various support circuits may be coupled to the computer processor for supporting the processor in a conventional manner. Software routines as required may be stored in the memory or executed by a second processor that is remotely located. Bi-directional communications between the control unit 110 and the various components of the wafer processing system 10 are handled through numerous signal cables collectively referred to as signal buses 118, some of which are illustrated in FIG. 1.

Boride Barrier Layer Formation

[0029] FIGS. 2a–2c illustrate one preferred embodiment of boride layer formation for integrated circuit fabrication of an interconnect structure. In general, the substrate 200 refers to any workpiece upon which film processing is performed, and a substrate structure 250 is used to generally denote the substrate 200 as well as other material layers formed on the substrate 200. Depending on the specific stage of processing, the substrate 200 may be a silicon semiconductor wafer, or other material layer, which has been formed on the wafer. FIG. 2a, for example, shows a cross-sectional view of a substrate structure 250, having a material layer 202 thereon. In this particular illustration, the material layer 202 may be an oxide (e.g., silicon dioxide). The material layer 202 has been conventionally formed and patterned to provide a contact hole 202H extending to the top surface 200T of the substrate 200.

[0030] FIG. 2b shows a boride layer 204 conformably formed on the substrate structure 250. The boride layer 204 is formed by chemisorbing monolayers of a boron-containing compound and a refractory metal compound on the substrate structure 250.

[0031] The monolayers are chemisorbed by sequentially providing a boron-containing compound and one or more refractory metal compounds to a process chamber. In a first sequential chemisorption process, the monolayers of the boron-containing compound and one refractory metal compound are alternately chemisorbed on a substrate 300 as shown in FIGS. 3a–3c.

[0032] FIG. 3a depicts a cross-sectional view of a substrate 300, which may be in a stage of integrated circuit fabrication. A monolayer of a boron-containing compound 305 is chemisorbed on the substrate 300 by introducing a pulse of a boron-containing gas into a process chamber similar to that shown in FIG. 1. The boron-containing compound typically combines boron atoms 310 with one or more reactive species b 315. During boride layer formation, the reactive species b 315 form byproducts that are transported from the surface of substrate 300 by the vacuum system.

[0033] The chemisorbed monolayer of the boron-containing compound 305 is self-limiting in that only one monolayer may be chemisorbed onto the surface of substrate 300 during a given pulse. Only one monolayer of the boron-containing compound is chemisorbed on the substrate because the substrate has a limited surface area. This limited surface area provides a finite number of sites for chemisorbing the boron-containing compound. Once the finite number of sites is occupied by the boron-containing compound, further chemisorption of the boron-containing compound will be blocked.

[0034] The boron-containing compound may be for example a borane compound having the general formula B_xH_y, where x has a range between 1 and 10, and y has a range between 3 and 30. For example, borane (BH₃), diborane (B₂H₆), triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane, and decaborane, may be used as the boron-containing compound.

[0035] After the monolayer of the boron compound is chemisorbed onto the substrate 300, excess boron-containing compound is removed from the process chamber by introducing a pulse of a purge gas thereto. Purge gases such as, for example helium (He), argon (Ar), nitrogen (N₂), ammonia (NH₃), and hydrogen (H₂), among others may be used.

[0036] After the process chamber has been purged, a pulse of one refractory metal compound is introduced into the process chamber. Referring to FIG. 3b, a layer of the refractory metal compound 307 is chemisorbed on the boron monolayer 305. The refractory metal compound typically combines refractory metal atoms 320 with one or more reactive species a 325.

[0037] The chemisorbed monolayer of the refractory metal compound 307 reacts with the boron-containing monolayer 305 to form a boride layer 309. The reactive species a 325 and b 315 form byproducts ab 330 that are transported from the substrate 300 surface by the vacuum system. The reaction of the refractory metal compound 307 with the boron monolayer 305 is self-limited, since only one monolayer of the boron compound was chemisorbed onto the substrate 300 surface.

[0038] The refractory metal compound may include refractory metals such as for example titanium (Ti), tungsten (W), tantalum (Ta), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), and chromium (Cr), among others combined with reactive species such as, for example chlorine (Cl) and fluorine (F). For example, titanium tetrachloride (TiCl₄), tungsten hexafluoride (WF₆), tantalum pentachloride (TaCl₅), zirconium tetrachloride (ZrCl₄), hafnium tetrachloride (HfCl₄), molybdenum pentachloride (MoCl₅), niobium pentachloride (NbCl₅), vanadium pentachloride (VCl₅), chromium tetrachloride (CrCl₄) may be used as the refractory metal compound.

[0039] After the monolayer of the refractory metal compound is chemisorbed onto the substrate 300, any excess refractory metal compound is removed from the process chamber by introducing another pulse of the purge gas therein. Thereafter, as shown in FIG. 3c, the boride layer deposition sequence of alternating monolayers of the boron-containing compound and the refractory metal compound are repeated until a desired boride layer thickness is achieved. The boride layer may, for example, have a thickness in a range of about 200 Å to about 5,000 Å, and more preferably, about 2,500 Å.

[0040] In FIGS. 3a–3c, boride layer formation is depicted as starting with the chemisorption of a boron-containing monolayer on the substrate followed by a monolayer of a refractory metal compound. Alternatively, the boride layer formation may start with the chemisorption of a monolayer of a refractory metal compound on the substrate followed by a monolayer of the boron-containing compound.

[0041] The pulse time for each pulse of the boron-containing compound, the one or more refractory metal compounds, and the purge gas is variable and depends on the volume capacity of the deposition chamber as well as the vacuum system coupled thereto. Similarly, the time between each pulse is also variable and depends on the volume capacity of the process chamber as well as the vacuum system coupled thereto.

[0042] In general, the alternating monolayers may be chemisorbed at a substrate temperature less than about 500° C., and a chamber pressure less than about 100 Torr. A pulse time of less than about 1 second for the boron-containing compound, and a pulse time of less than about 1 second for the refractory metal compounds are typically sufficient to chemisorb the alternating monolayers that comprise the boride layer on the substrate. A pulse time of less than about 1 second for the purge gas is typically sufficient to remove the reaction byproducts as well as any residual materials remaining in the process chamber.

[0043] In a second chemisorption process, the boron-containing monolayers and two or more refractory metal compounds are alternately chemisorbed on the substrate to form a composite boride layer. FIG. 4a depicts a cross-sectional view of a substrate 400, which may be in a stage of integrated circuit fabrication. A self-limiting monolayer of a boron-containing compound 405 is chemisorbed on the substrate 400 by introducing a pulse of a boron-containing compound into a process chamber similar to that shown in FIG. 1 according to the process conditions described above with reference to FIGS. 2a–2c. The boron-containing compound combines boron atoms 410 with one or more reactive species b 415.

[0044] After the monolayer of the boron compound 405 is chemisorbed onto the substrate 400, excess boron-containing compound is removed from the process chamber by introducing a pulse of a purge gas thereto.

[0045] Referring to FIG. 4b, after the process chamber has been purged, a pulse of a first refractory metal compound Mian is introduced into the process chamber. A layer of the first refractory metal compound 407 is chemisorbed on the boron monolayer 405. The first refractory metal compound typically combines first refractory metal atoms M₁420 with one or more reactive species a₁425.

[0046] The chemisorbed monolayer of the first refractory metal compound 407 reacts with the boron-containing monolayer 405 to form a boride monolayer 409. The reactive species a₁425 and b 415 form byproducts a₁b 430 that are transported from the substrate 400 surface by the vacuum system.

[0047] After the monolayer of the first refractory metal compound 407 is chemisorbed onto the substrate 400, the excess first refractory metal compound M₁a₁is removed from the process chamber by introducing another pulse of the purge gas therein.

[0048] Another pulse of the boron-containing compound is than introduced into the process chamber. A monolayer of the boron-containing compound 405 is chemisorbed on the first refractory metal monolayer 407, as shown in FIG. 4c. The chemisorbed monolayer of the boron-containing compound 405 reacts with the first refractory metal monolayer 407 to form a boride layer 409. The reactive species a₁425 and b 415 form byproducts a₁b 430 that are transported from the substrate 400 surface by the vacuum system.

[0049] After the monolayer of the boron compound 405 is chemisorbed onto the first refractive metal monolayer 407, excess boron-containing compound is removed from the process chamber by introducing a pulse of a purge gas thereto.

[0050] Referring to FIG. 4d, after the process chamber has been purged, a pulse of a second refractory metal compound M₂a₁is introduced into the process chamber. A layer of the second refractory metal compound is chemisorbed on the boron monolayer 405. The second refractory metal compound typically combines second refractory metal atoms M₂440 with one or more reactive species a₁425.

[0051] The chemisorbed monolayer of the second refractory metal compound reacts with the boron-containing monolayer 405 to form the composite boride layer 409. The reactive species a₁425 and b 415 form byproducts a₁b 430 that are transported from the substrate 400 surface by the vacuum system.

[0052] After the monolayer of the second refractory metal compound is chemisorbed onto the substrate 400, the excess second refractory metal compound M₂a₁is removed from the process chamber by introducing another pulse of the purge gas therein.

[0053] Thereafter, the boride layer deposition sequence of alternating monolayers of the boron-containing compound and the two refractory metal compounds M₁a₁and M₂a₁are repeated until a desired boride layer thickness is achieved.

[0054] In FIGS. 4a–4d, boride layer formation is depicted as starting with the chemisorption of the boron-containing monolayer on the substrate followed by monolayers of the two refractory metal compounds. Alternatively, the boride layer formation may start with the chemisorption of monolayers of either of the two refractory metal compounds on the substrate followed by monolayers of the boron-containing compound. Optionally, monolayers of more than two refractory metal compounds may be chemisorbed on the substrate 400.

[0055] In a third chemisorption process, the boron-containing monolayers and two or more refractory metal compounds are alternately chemisorbed on the substrate to form a composite boride layer, as illustrated in FIGS. 5a–5d.

[0056] FIG. 5a depicts a cross-sectional view of a substrate 500, which may be in a stage of integrated circuit fabrication. A self-limiting monolayer of a first refractory metal compound 507 is chemisorbed on the substrate 500 by introducing a pulse of a first refractory metal compound M₁a₁into a process chamber similar to that shown in FIG. 1 according to the process conditions described above with reference to FIGS. 2a–2c.

[0057] After the monolayer of the first refractory metal compound 507 is chemisorbed onto the substrate 500, excess first refractory metal compound is removed from the process chamber by introducing a pulse of a purge gas thereto.

[0058] Referring to FIG. 5b, after the process chamber has been purged, a pulse of a second refractory metal compound M₂a₁is introduced into the process chamber. A layer of the second refractory metal compound 511 is chemisorbed on the first refractory metal monolayer 507.

[0059] After the monolayer of the second refractory metal compound 511 is chemisorbed onto the substrate 500, the excess second refractory metal compound M₂a₁is removed from the process chamber by introducing another pulse of the purge gas therein.

[0060] A pulse of a boron-containing compound 510 is than introduced into the process chamber. A monolayer of the boron-containing compound 505 is chemisorbed on the second refractory metal monolayer 511, as shown in FIG. 5c. The chemisorbed monolayer of the boron-containing compound 505 reacts with the second refractory metal monolayer 511 to form a composite boride layer 509. The reactive species a₁525 and b 515 form byproducts a₁b 530 that are transported from the substrate 500 surface by the vacuum system.

[0061] After the monolayer of the boron compound 505 is chemisorbed onto the second refractory metal monolayer 511, excess boron-containing compound is removed from the process chamber by introducing a pulse of a purge gas thereto.

[0062] Referring to FIG. 5d, after the process chamber has been purged, a pulse of the first refractory metal compound 520 M₁a₁is introduced into the process chamber. A monolayer of the first refractory metal compound 507 is chemisorbed on the boron monolayer 505.

[0063] The chemisorbed monolayer of the first refractory metal compound 507 reacts with the boron-containing monolayer 505 to form the boride monolayer 509. The reactive species a₁525 and b 515 form byproducts a₁b 530 that are transported from the substrate 500 surface by the vacuum system.

[0064] After the monolayer of the first refractory metal compound 507 is chemisorbed onto the substrate 500, the excess first refractory metal compound M₁a₁is removed from the process chamber by introducing another pulse of the purge gas therein.

[0065] Thereafter, the boride layer deposition sequence of alternating monolayers of the boron-containing compound and the two refractory metal compounds M₁a₁(520) and M₂a₁(540) are repeated until a desired boride layer thickness is achieved.

[0066] In FIGS. 5a–5d, boride layer formation is depicted as starting with the chemisorption of the first refractory metal monolayer on the substrate followed by monolayers of the second refractory metal compound and the boron-containing compound. Alternatively, the boride layer formation may start with the chemisorption of the monolayer of the boron-containing compound on the substrate followed by the monolayers of the two refractory metal compounds. Optionally, monolayers of more than two refractory metal compounds may be chemisorbed on the substrate 500.

[0067] The sequential deposition processes described above advantageously provide good step coverage for the boride layer, due to the monolayer chemisorption mechanism used for forming the boride layer. In particular, boride layer formation using the monolayer chemisorption mechanism is believed to contribute to a near perfect step coverage over complex substrate topographies.

[0068] Furthermore, in chemisorption processes, since only one monolayer may be absorbed on the topographic surface, the size of the deposition area is largely independent of the amount of precursor gas remaining in the reaction chamber once a monolayer has been formed.

[0069] Referring to FIG. 2c, after the formation of the boride layer 204, a contact layer 206 may be formed thereon to complete the interconnect structure. The contact layer 206 is preferably selected from the group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.

[0070] The contact layer 206 may be formed, for example, using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD. For example, an aluminum (Al) layer may be deposited from a reaction of a gas mixture containing dimethyl aluminum hydride (DMAH) and hydrogen (H₂) or argon (Ar) or other DMAH containing compounds, a CVD copper layer may be deposited from a gas mixture containing Cu⁺²(hfac)₂(copper hexafluoro acetylacetonate), Cu⁺²(fod)₂(copper heptafluoro dimethyl octanediene), Cu⁺¹(hfac)TMVS (copper hexafluoro acetylacetonate trimethylvinylsilane), or combinations thereof, and a CVD tungsten layer may be deposited from a gas mixture containing tungsten hexafluoride (WF₆). A PVD layer is deposited from a copper target, an aluminum target, or a tungsten target.

[0071] FIGS. 6a–6c illustrate an alternate embodiment of boride layer formation for integrated circuit fabrication of the interconnect structure. In general, the substrate 600 refers to any workpiece upon which film processing is performed, and a substrate structure 650 is used to generally denote the substrate 600 as well as other material layers formed on the substrate 600. Depending on the specific stage of processing, the substrate 600 may be a silicon semiconductor wafer, or other material layer, which has been formed on the wafer. FIG. 6a, for example, shows a cross-sectional view of a substrate structure 650, having a material layer 602 thereon. In this particular illustration, the material layer 602 may be an oxide (e.g., silicon dioxide). The material layer 602 has been conventionally formed and patterned to provide a contact hole 602H extending to the top surface 600T of the substrate 600.

[0072] FIG. 6b shows two boride layers 604, 606 conformably formed on the substrate structure 650. The boride layers 604, 606 are formed by chemisorbing monolayers of a boron-containing compound and one or more refractory metal compounds on the substrate structure 650 as described above with reference to FIGS. 3a–5d. The two boride layers 604, 606 may each comprise one or more refractory metals. The thicknesses of the two or more boride layers 604, 606 may be variable depending on the specific stage of processing. Each boride layer 604, 606 may, for example, have a thickness in a range of about 200 Å to about 5,000 Å.

[0073] Referring to FIG. 6c, after the formation of the boride layers 604, 606, a contact layer 608 may be formed thereon to complete the interconnect structure. The contact layer 608 is preferably selected from the group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.

[0074] The specific process conditions disclosed in the above discussion are meant for illustrative purposes only. Other combinations of process parameters such as precursor and inert gases, flow ranges, pressure and temperature may also be used in forming the boride layer of the present invention.

[0075] Although several preferred embodiments, which incorporate the teachings of the present invention, have been shown and described in detail, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings.

Claims

Certificate of Correction present

The claims shown below may not include correction changes. Use the corrected PDF for authoritative text.

The invention claimed is:

1. A method for depositing a metal-containing layer on a substrate, comprising:

positioning a substrate within a process chamber; and

forming a metal boride layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a boron-containing compound and a metal-containing compound on the substrate during an atomic layer deposition process wherein the metal boride layer is formed at a temperature of less than about 500° C.

2. The method of claim 1, wherein the substrate is exposed to a purge gas following chemisorption of each monolayer.

3. The method of claim 2, wherein the boron-containing compound is a borane compound.

4. The method of claim 3, wherein the borane compound is diborane.

5. The method of claim 4, wherein forming the metal boride layer is formed at a temperature of less than about 400° C.

6. The method of claim 2, wherein the metal-containing compound is titanium tetrachloride.

7. The method of claim 2, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

8. The method of claim 1, wherein the metal boride layer is formed at a temperature of less than about 300° C.

9. A method for forming a titanium and boron-containing layer on a substrate comprising:

positioning a substrate within a process chamber; and

forming a titanium layer comprising boron on at least a portion of the substrate by sequentially chemisorbing monolayers of a titanium-containing compound and a boron-containing compound on the substrate during an atomic layer deposition process wherein the titanium layer comprising boron is formed at a temperature of less than about 500° C.

10. The method of claim 9, wherein the titanium-containing compound is titanium tetrachioride.

11. The method of claim 10, wherein the boron-containing compound is diborane.

12. The method of claim 9, wherein the substrate is exposed to a purge gas following chemisorption of each monolayer.

13. The method of claim 12, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

14. The method of claim 9, wherein the titanium layer comprising boride is formed at a temperature of less than about 300° C.

15. A method for depositing a material on a substrate, comprising:

placing a substrate within a process chamber

introducing a boron-containing compound into the process chamber;

chemisorbing at least a portion of the boron-containing compound on the substrate at conditions sufficient to form a boron-containing layer;

purging the process chamber with a purge gas;

introducing a metal-containing compound into the process chamber;

reacting a portion of the metal-containing compound with the boron-containing layer at conditions sufficient to form a metal boride-containing layer, wherein the metal boride-containing layer is formed at a temperature of less than about 500° C.; and

purging the process chamber with the purge gas.

16. The method of claim 15, wherein the boron-containing compound is a borane compound.

17. The method of claim 16, wherein the borane compound is diborane.

18. The method of claim 17, wherein the metal boride-containing layer is formed at a temperature of less than about 400° C.

19. The method of claim 16, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

20. The method of claim 15, wherein the metal-containing compound is titanium tetrachloride.

21. The method of claim 15, wherein the metal boride-containing layer is formed at a temperature of less than about 300° C.

22. A method for depositing a material on a substrate, comprising:

placing a substrate within a process chamber;

introducing a metal-containing compound into the process chamber;

chemisorbing at least a portion of the metal-containing compound on the substrate at conditions sufficient to form a metal-containing layer;

purging the process chamber with a purge gas;

introducing a boron-containing compound into the process chamber;

reacting a portion of the boron-containing compound with the metal-containing layer at conditions sufficient to form a metal boride-containing layer wherein the metal boride-containing layer is formed at a temperature of less than about 500° C.; and

purging the process chamber with the purge gas.

23. The method of claim 22, wherein the boron-containing compound is a borane compound.

24. The method of claim 23, wherein the borane compound is diborane.

25. The method of claim 24, wherein the metal boride-containing layer is formed at a temperature of less than about 400° C.

26. The method of claim 24, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

27. The method of claim 22, wherein the metal-containing compound is titanium tetrachloride.

28. The method of claim 22, wherein the metal boride-containing layer is formed at a temperature of less than about 300° C.

Patent Citations (674)

Patent	Date	Inventor	Cited By
US4058430(A)	1977-11-01	Suntola et al.	Applicant
US4389973(A)	1983-06-01	Suntola et al.	Applicant
US4413022(A)	1983-11-01	Suntola et al.	Applicant
US4486487(A)	1984-12-01	Suntola et al.	Applicant
US4693208(A)	1987-09-01	Sakai	Applicant
US4767494(A)	1988-08-01	Kobayashi et al.	Applicant
US4806321(A)	1989-02-01	Nishizawa et al.	Applicant
US4813846(A)	1989-03-01	Helms	Applicant
US4829022(A)	1989-05-01	Kobayashi et al.	Applicant
US4834831(A)	1989-05-01	Nishizawa et al.	Applicant
US4838983(A)	1989-06-01	Schumaker et al.	Applicant
US4838993(A)	1989-06-01	Aoki et al.	Applicant
US4840921(A)	1989-06-01	Matsumoto	Applicant
US4845049(A)	1989-07-01	Sunakawa	Applicant
US4859307(A)	1989-08-01	Nishizawa et al.	Applicant
US4859627(A)	1989-08-01	Sunakawa	Applicant
US4861417(A)	1989-08-01	Mochizuki et al.	Applicant
US4876218(A)	1989-10-01	Pessa et al.	Applicant
US4917556(A)	1990-04-01	Stark et al.	Applicant
US4927670(A)	1990-05-01	Erbil	Applicant
US4931132(A)	1990-06-01	Aspnes et al.	Applicant
US4951601(A)	1990-08-01	Maydan et al.	Applicant
US4960720(A)	1990-10-01	Shimbo	Applicant
US4975252(A)	1990-12-01	Nishizawa et al.	Applicant
US4976839(A)	1990-12-01	Inoue	Applicant
US4993357(A)	1991-02-01	Scholz	Applicant
US5000113(A)	1991-03-01	Wang et al.	Applicant
US5013683(A)	1991-05-01	Petroff et al.	Applicant
US5082798(A)	1992-01-01	Arimoto	Applicant
US5085885(A)	1992-02-01	Foley et al.	Applicant
US5091320(A)	1992-02-01	Aspnes et al.	Applicant
US5130269(A)	1992-07-01	Kitahara et al.	Applicant
US5166092(A)	1992-11-01	Mochizuki et al.	Applicant
US5186718(A)	1993-02-01	Tepman et al.	Applicant
US5205077(A)	1993-04-01	Wittstock	Applicant
US5225366(A)	1993-07-01	Yoder	Applicant
US5234561(A)	1993-08-01	Randhawa et al.	Applicant
US5246536(A)	1993-09-01	Nishizawa et al.	Applicant
US5250148(A)	1993-10-01	Nishizawa et al.	Applicant
US5254207(A)	1993-10-01	Nishizawa et al.	Applicant
US5256244(A)	1993-10-01	Ackerman	Applicant
US5259881(A)	1993-11-01	Edwards et al.	Applicant
US5270247(A)	1993-12-01	Sakuma et al.	Applicant
US5278435(A)	1994-01-01	Van Hove et al.	Applicant
US5281274(A)	1994-01-01	Yoder	Applicant
US5286296(A)	1994-02-01	Sato et al.	Applicant
US5290609(A)	1994-03-01	Horike et al.	Applicant
US5290748(A)	1994-03-01	Knuuttila et al.	Applicant
US5294286(A)	1994-03-01	Nishizawa et al.	Applicant
US5296403(A)	1994-03-01	Nishizawa et al.	Applicant
US5300186(A)	1994-04-01	Kitahara et al.	Applicant
US5306666(A)	1994-04-01	Izumi et al.	Applicant
US5311055(A)	1994-05-01	Goodman et al.	Applicant
US5316615(A)	1994-05-01	Copel	Applicant
US5316793(A)	1994-05-01	Wallace et al.	Applicant
US5330610(A)	1994-07-01	Eres et al.	Applicant
US5336324(A)	1994-08-01	Stall et al.	Applicant
US5338389(A)	1994-08-01	Nishizawa et al.	Applicant
US5348911(A)	1994-09-01	Jurgensen et al.	Applicant
US5374570(A)	1994-12-01	Nasu et al.	Applicant
US5395791(A)	1995-03-01	Cheng et al.	Applicant
US5438952(A)	1995-08-01	Otsuka	Applicant
US5439876(A)	1995-08-01	Graf et al.	Applicant
US5441703(A)	1995-08-01	Jurgensen	Applicant
US5443033(A)	1995-08-01	Nishizawa et al.	Applicant
US5443647(A)	1995-08-01	Aucoin et al.	Applicant
US5455072(A)	1995-10-01	Bension et al.	Applicant
US5458084(A)	1995-10-01	Thorne et al.	Applicant
US5469806(A)	1995-11-01	Mochizuki et al.	Applicant
US5480818(A)	1996-01-01	Matsumoto et al.	Applicant
US5483919(A)	1996-01-01	Yokoyama et al.	Applicant
US5484664(A)	1996-01-01	Kitahara et al.	Applicant
US5503875(A)	1996-04-01	Imai et al.	Applicant
US5521126(A)	1996-05-01	Okamura et al.	Applicant
US5526244(A)	1996-06-01	Sekine et al.	Applicant
US5527733(A)	1996-06-01	Nishizawa et al.	Applicant
US5532511(A)	1996-07-01	Nishizawa et al.	Applicant
US5540783(A)	1996-07-01	Eres et al.	Applicant
US5580380(A)	1996-12-01	Liu et al.	Applicant
US5601651(A)	1997-02-01	Watabe	Applicant
US5609689(A)	1997-03-01	Kato et al.	Applicant
US5616181(A)	1997-04-01	Yamamoto et al.	Applicant
US5637530(A)	1997-06-01	Gaines et al.	Applicant
US5641984(A)	1997-06-01	Aftergut et al.	Applicant
US5644128(A)	1997-07-01	Wollnik et al.	Applicant
US5667592(A)	1997-09-01	Boitnott et al.	Applicant
US5674786(A)	1997-10-01	Turner et al.	Applicant
US5693139(A)	1997-12-01	Nishizawa et al.	Applicant
US5695564(A)	1997-12-01	Imahashi et al.	Applicant
US5705224(A)	1998-01-01	Murota et al.	Applicant
US5707880(A)	1998-01-01	Aftergut et al.	Applicant
US5711811(A)	1998-01-01	Suntola et al.	Applicant
US5730801(A)	1998-03-01	Tepman et al.	Applicant
US5730802(A)	1998-03-01	Ishizumi et al.	Applicant
US5747113(A)	1998-05-01	Tsai	Applicant
US5749974(A)	1998-05-01	Habuka et al.	Applicant
US5788447(A)	1998-08-01	Yonemitsu et al.	Applicant
US5788799(A)	1998-08-01	Steger et al.	Applicant
US5796116(A)	1998-08-01	Nakata et al.	Applicant
US5801634(A)	1998-09-01	Young et al.	Applicant
US5804488(A)	1998-09-01	Shih et al.	Applicant
US5807792(A)	1998-09-01	Ilg et al.	Applicant
US5830270(A)	1998-11-01	McKee et al.	Applicant
US5834372(A)	1998-11-01	Lee	Applicant
US5835677(A)	1998-11-01	Li et al.	Applicant
US5851849(A)	1998-12-01	Comizzoli et al.	Applicant
US5855675(A)	1999-01-01	Doering et al.	Applicant
US5855680(A)	1999-01-01	Soininen et al.	Applicant
US5856219(A)	1999-01-01	Naito et al.	Applicant
US5858102(A)	1999-01-01	Tsai	Applicant
US5866213(A)	1999-02-01	Foster et al.	Applicant
US5866795(A)	1999-02-01	Wang et al.	Applicant
US5882165(A)	1999-03-01	Maydan et al.	Applicant
US5882413(A)	1999-03-01	Beaulieu et al.	Applicant
US5904565(A)	1999-05-01	Nguyen et al.	Applicant
US5916365(A)	1999-06-01	Sherman	Applicant
US5923056(A)	1999-07-01	Lee et al.	Applicant
US5923985(A)	1999-07-01	Aoki et al.	Applicant
US5925574(A)	1999-07-01	Aoki et al.	Applicant
US5928389(A)	1999-07-01	Jevtic	Applicant
US5942040(A)	1999-08-01	Kim et al.	Applicant
US5942799(A)	1999-08-01	Danek et al.	Applicant
US5947710(A)	1999-09-01	Cooper et al.	Applicant
US6001669(A)	1999-12-01	Gaines et al.	Applicant
US6013553(A)	2000-01-01	Wallace et al.	Applicant
US6015590(A)	2000-01-01	Suntola et al.	Applicant
US6015917(A)	2000-01-01	Bhandari et al.	Applicant
US6020243(A)	2000-02-01	Wallace et al.	Applicant
US6025627(A)	2000-02-01	Forbes et al.	Applicant
US6036773(A)	2000-03-01	Wang et al.	Applicant
US6042652(A)	2000-03-01	Hyun et al.	Applicant
US6043177(A)	2000-03-01	Falconer et al.	Applicant
US6051286(A)	2000-04-01	Zhao et al.	Applicant
US6060755(A)	2000-05-01	Ma et al.	Applicant
US6062798(A)	2000-05-01	Muka	Applicant
US6071808(A)	2000-06-01	Merchant et al.	Applicant
US6084302(A)	2000-07-01	Sandhu	Applicant
US6086677(A)	2000-07-01	Umotoy et al.	Applicant
US6099904(A)	2000-08-01	Mak et al.	Applicant
US6110556(A)	2000-08-01	Bang et al.	Applicant
US6113977(A)	2000-09-01	Soininen et al.	Applicant
US6117244(A)	2000-09-01	Bang et al.	Applicant
US6124158(A)	2000-09-01	Dautartas et al.	Applicant
US6130147(A)	2000-10-01	Major et al.	Applicant
US6139700(A)	2000-10-01	Kang et al.	Applicant
US6140237(A)	2000-10-01	Chan et al.	Applicant
US6140238(A)	2000-10-01	Kitch	Applicant
US6143659(A)	2000-11-01	Leem	Applicant
US6144060(A)	2000-11-01	Park et al.	Applicant
US6156382(A)	2000-12-01	Rajagopalan et al.	Applicant
US6158446(A)	2000-12-01	Mohindra et al.	Applicant
US6174377(B1)	2001-01-01	Doering et al.	Applicant
US6174809(B1)	2001-01-01	Doering et al.	Applicant
US6197683(B1)	2001-03-01	Kang et al.	Applicant
US6200893(B1)	2001-03-01	Sneh	Applicant
US6203613(B1)	2001-03-01	Gates et al.	Applicant
US6206967(B1)	2001-03-01	Mak et al.	Applicant
US6207302(B1)	2001-03-01	Sugiura et al.	Applicant
US6207487(B1)	2001-03-01	Kim et al.	Applicant
US6218298(B1)	2001-04-01	Hoinkis	Applicant
US6238734(B1)	2001-05-01	Senzaki et al.	Applicant
US6248605(B1)	2001-06-01	Harkonen et al.	Applicant
US6270572(B1)	2001-08-01	Kim et al.	Applicant
US6271148(B1)	2001-08-01	Kao et al.	Applicant
US6274484(B1)	2001-08-01	Tsai et al.	Applicant
US6284646(B1)	2001-09-01	Leem	Applicant
US6287965(B1)	2001-09-01	Kang et al.	Applicant
US6291283(B1)	2001-09-01	Wilk	Applicant
US6291876(B1)	2001-09-01	Stumborg et al.	Applicant
US6297539(B1)	2001-10-01	Ma et al.	Applicant
US6299294(B1)	2001-10-01	Regan	Applicant
US6305314(B1)	2001-10-01	Sneh et al.	Applicant
US6306216(B1)	2001-10-01	Kim et al.	Applicant
US6316098(B1)	2001-11-01	Yitzchaik et al.	Applicant
US6326297(B1)	2001-12-01	Vijayendran	Applicant
US6333260(B1)	2001-12-01	Kwon et al.	Applicant
US6335280(B1)	2002-01-01	Van der Jeugd	Applicant
US6342277(B1)	2002-01-01	Sherman	Applicant
US6348376(B2)	2002-02-01	Lim et al.	Applicant
US6348386(B1)	2002-02-01	Gilmer	Applicant
US6355561(B1)	2002-03-01	Sandhu et al.	Applicant
US6358829(B2)	2002-03-01	Yoon et al.	Applicant
US6368954(B1)	2002-04-01	Lopatin et al.	Applicant
US6369430(B1)	2002-04-01	Adetutu et al.	Applicant
US6372598(B2)	2002-04-01	Kang et al.	Applicant
US6379748(B1)	2002-04-01	Bhandari et al.	Applicant
US6391785(B1)	2002-05-01	Satta et al.	Applicant
US6391803(B1)	2002-05-01	Kim et al.	Applicant
US6395650(B1)	2002-05-01	Callegari et al.	Applicant
US6399208(B1)	2002-06-01	Baum et al.	Applicant
US6399491(B2)	2002-06-01	Jeon et al.	Applicant
US6416577(B1)	2002-07-01	Suntoloa et al.	Applicant
US6416822(B1)	2002-07-01	Chiang et al.	Applicant
US6420189(B1)	2002-07-01	Lopatin et al.	Applicant
US6420279(B1)	2002-07-01	Ono et al.	Applicant
US6423619(B1)	2002-07-01	Grant et al.	Applicant
US6428859(B1)	2002-08-01	Chiang et al.	Applicant
US6447933(B1)	2002-09-01	Wang et al.	Applicant
US6451119(B2)	2002-09-01	Sneh et al.	Applicant
US6451695(B2)	2002-09-01	Sneh	Applicant
US6452229(B1)	2002-09-01	Krivokapic	Applicant
US6458701(B1)	2002-10-01	Chae et al.	Applicant
US6468924(B2)	2002-10-01	Lee et al.	Applicant
US6475276(B1)	2002-11-01	Elers et al.	Applicant
US6475910(B1)	2002-11-01	Sneh	Applicant
US6478872(B1)	2002-11-01	Chae et al.	Applicant
US6482262(B1)	2002-11-01	Elers et al.	Applicant
US6482733(B2)	2002-11-01	Raaijmakers et al.	Applicant
US6482740(B2)	2002-11-01	Soininen et al.	Applicant
US6511539(B1)	2003-01-01	Raaijmakers	Applicant
US6524952(B1)	2003-02-01	Srinivas et al.	Applicant
US6534395(B2)	2003-03-01	Werkhoven et al.	Applicant
US6534404(B1)	2003-03-01	Danek et al.	Applicant
US6548424(B2)	2003-04-01	Putkonen	Applicant
US6551929(B1)	2003-04-01	Kori et al.	Applicant
US6569501(B2)	2003-05-01	Chiang et al.	Applicant
US6585823(B1)	2003-07-01	Van Wijck	Applicant
US6593484(B2)	2003-07-01	Yasuhara et al.	Applicant
US6596602(B2)	2003-07-01	Iizuka et al.	Applicant
US6599572(B2)	2003-07-01	Saanila et al.	Applicant
US6607973(B1)	2003-08-01	Jeon	Applicant
US6607976(B2)	2003-08-01	Chen et al.	Applicant
US6620723(B1)	2003-09-01	Byun et al.	Examiner
US6630201(B2)	2003-10-01	Chiang et al.	Applicant
US6632279(B1)	2003-10-01	Ritala et al.	Applicant
US6635965(B1)	2003-10-01	Lee et al.	Applicant
US6647138(B1)	2003-11-01	Sakaguchi	Applicant
US6660126(B2)	2003-12-01	Nguyen et al.	Applicant
US6686271(B2)	2004-02-01	Raaijmakers et al.	Applicant
US6713846(B1)	2004-03-01	Senzaki	Applicant
US6784096(B2)	2004-08-01	Chen et al.	Applicant
US6790773(B1)	2004-09-01	Drewery et al.	Applicant
US6800173(B2)	2004-10-01	Chiang et al.	Applicant
US6803272(B1)	2004-10-01	Halliyal et al.	Applicant
US6815285(B2)	2004-11-01	Choi et al.	Applicant
US6831004(B2)	2004-12-01	Byun et al.	Examiner
US6838125(B2)	2005-01-01	Chung et al.	Applicant
US6893915(B2)	2005-05-01	Park et al.	Applicant
US6936538(B2)	2005-08-01	Byun	Applicant
US6958174(B1)	2005-10-01	Klaus et al.	Applicant
US6969539(B2)	2005-11-01	Gordon et al.	Applicant
US2001/0000866(A1)	2001-05-01	Sneh et al.	Applicant
US2001/0002280(A1)	2001-05-01	Sneh	Applicant
US2001/0009140(A1)	2001-07-01	Bondestam et al.	Applicant
US2001/0009695(A1)	2001-07-01	Saanila et al.	Applicant
US2001/0011526(A1)	2001-08-01	Doering et al.	Applicant
US2001/0021589(A1)	2001-09-01	Wilk	Applicant
US2001/0024387(A1)	2001-09-01	Raaijmakers et al.	Applicant
US2001/0025979(A1)	2001-10-01	Kim et al.	Applicant
US2001/0028924(A1)	2001-10-01	Sherman	Applicant
US2001/0029092(A1)	2001-10-01	Park et al.	Applicant
US2001/0029094(A1)	2001-10-01	Mee-Young et al.	Applicant
US2001/0029891(A1)	2001-10-01	Oh et al.	Applicant
US2001/0031562(A1)	2001-10-01	Raaijmakers et al.	Applicant
US2001/0034123(A1)	2001-10-01	Jeon et al.	Applicant
US2001/0041250(A1)	2001-11-01	Werkhoven et al.	Applicant
US2001/0050039(A1)	2001-12-01	Park et al.	Applicant
US2001/0054730(A1)	2001-12-01	Kim et al.	Applicant
US2001/0054769(A1)	2001-12-01	Raaijmakers et al.	Applicant
US2002/0000598(A1)	2002-01-01	Kang et al.	Applicant
US2002/0004293(A1)	2002-01-01	Soininen et al.	Applicant
US2002/0005556(A1)	2002-01-01	Cartier et al.	Applicant
US2002/0007790(A1)	2002-01-01	Park	Applicant
US2002/0008297(A1)	2002-01-01	Park et al.	Applicant
US2002/0009544(A1)	2002-01-01	McFeely et al.	Applicant
US2002/0014647(A1)	2002-02-01	Seidl et al.	Applicant
US2002/0015790(A1)	2002-02-01	Baum et al.	Applicant
US2002/0019121(A1)	2002-02-01	Pyo	Applicant
US2002/0020869(A1)	2002-02-01	Park et al.	Applicant
US2002/0021544(A1)	2002-02-01	Cho et al.	Applicant
US2002/0029092(A1)	2002-03-01	Gass	Applicant
US2002/0031618(A1)	2002-03-01	Sherman	Applicant
US2002/0037630(A1)	2002-03-01	Agarwal et al.	Applicant
US2002/0041931(A1)	2002-04-01	Suntola et al.	Applicant
US2002/0043666(A1)	2002-04-01	Parsons et al.	Applicant
US2002/0048635(A1)	2002-04-01	Kim et al.	Applicant
US2002/0048880(A1)	2002-04-01	Lee	Applicant
US2002/0052097(A1)	2002-05-01	Park	Applicant
US2002/0055235(A1)	2002-05-01	Agarwal et al.	Applicant
US2002/0060363(A1)	2002-05-01	Xi et al.	Applicant
US2002/0061612(A1)	2002-05-01	Sandhu et al.	Applicant
US2002/0064970(A1)	2002-05-01	Chooi et al.	Applicant
US2002/0068458(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0073924(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0074588(A1)	2002-06-01	Lee	Applicant
US2002/0076481(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076507(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076508(A1)	2002-06-01	Chiang et al.	Applicant
US2002/0076837(A1)	2002-06-01	Hujanen et al.	Applicant
US2002/0081826(A1)	2002-06-01	Rotondaro et al.	Applicant
US2002/0081844(A1)	2002-06-01	Jeon et al.	Applicant
US2002/0086111(A1)	2002-07-01	Byun et al.	Applicant
US2002/0086507(A1)	2002-07-01	Park et al.	Applicant
US2002/0090829(A1)	2002-07-01	Sandhu et al.	Applicant
US2002/0093046(A1)	2002-07-01	Moriya et al.	Applicant
US2002/0093781(A1)	2002-07-01	Bachhofer et al.	Applicant
US2002/0094689(A1)	2002-07-01	Park	Applicant
US2002/0098627(A1)	2002-07-01	Pomarede et al.	Applicant
US2002/0104481(A1)	2002-08-01	Chiang et al.	Applicant
US2002/0105088(A1)	2002-08-01	Yang et al.	Applicant
US2002/0106536(A1)	2002-08-01	Lee et al.	Applicant
US2002/0106846(A1)	2002-08-01	Seutter et al.	Applicant
US2002/0109168(A1)	2002-08-01	Kim et al.	Applicant
US2002/0115886(A1)	2002-08-01	Yasuhara et al.	Applicant
US2002/0117399(A1)	2002-08-01	Chen et al.	Applicant
US2002/0121241(A1)	2002-09-01	Nguyen et al.	Applicant
US2002/0121342(A1)	2002-09-01	Nguyen et al.	Applicant
US2002/0121697(A1)	2002-09-01	Marsh	Applicant
US2002/0135071(A1)	2002-09-01	Kang et al.	Applicant
US2002/0144655(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0144657(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0146511(A1)	2002-10-01	Chiang et al.	Applicant
US2002/0146895(A1)	2002-10-01	Ramdani et al.	Applicant
US2002/0151152(A1)	2002-10-01	Simamoto et al.	Applicant
US2002/0153579(A1)	2002-10-01	Yamamoto et al.	Applicant
US2002/0155722(A1)	2002-10-01	Satta et al.	Applicant
US2002/0162506(A1)	2002-11-01	Sneh et al.	Applicant
US2002/0164421(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0164423(A1)	2002-11-01	Chiang et al.	Applicant
US2002/0172768(A1)	2002-11-01	Endo et al.	Applicant
US2002/0175393(A1)	2002-11-01	Baum et al.	Applicant
US2002/0177282(A1)	2002-11-01	Song	Applicant
US2002/0177399(A1)	2002-11-01	Brown	Applicant
US2002/0182320(A1)	2002-12-01	Leskela et al.	Applicant
US2002/0187256(A1)	2002-12-01	Elers et al.	Applicant
US2002/0187631(A1)	2002-12-01	Kim et al.	Applicant
US2002/0195643(A1)	2002-12-01	Harada	Applicant
US2002/0197402(A1)	2002-12-01	Chiang et al.	Applicant
US2002/0197863(A1)	2002-12-01	Mak et al.	Applicant
US2002/0197881(A1)	2002-12-01	Ramdani et al.	Applicant
US2003/0013300(A1)	2003-01-01	Byun	Applicant
US2003/0013320(A1)	2003-01-01	Kim et al.	Applicant
US2003/0017697(A1)	2003-01-01	Choi et al.	Applicant
US2003/0031807(A1)	2003-02-01	Elers et al.	Applicant
US2003/0032281(A1)	2003-02-01	Werkhoven et al.	Applicant
US2003/0038369(A1)	2003-02-01	Layadi et al.	Applicant
US2003/0042630(A1)	2003-03-01	Babcoke et al.	Applicant
US2003/0049931(A1)	2003-03-01	Byun et al.	Applicant
US2003/0049942(A1)	2003-03-01	Haukka et al.	Applicant
US2003/0053799(A1)	2003-03-01	Lei	Applicant
US2003/0054631(A1)	2003-03-01	Raaijmakers et al.	Applicant
US2003/0057526(A1)	2003-03-01	Chung et al.	Applicant
US2003/0057527(A1)	2003-03-01	Chung et al.	Applicant
US2003/0059538(A1)	2003-03-01	Chung et al.	Applicant
US2003/0068437(A1)	2003-04-01	Nakamura et al.	Applicant
US2003/0072884(A1)	2003-04-01	Zhang et al.	Applicant
US2003/0072975(A1)	2003-04-01	Shero et al.	Applicant
US2003/0079686(A1)	2003-05-01	Chen et al.	Applicant
US2003/0082296(A1)	2003-05-01	Elers et al.	Applicant
US2003/0082300(A1)	2003-05-01	Todd et al.	Applicant
US2003/0082301(A1)	2003-05-01	Chen et al.	Applicant
US2003/0082307(A1)	2003-05-01	Chung et al.	Applicant
US2003/0089308(A1)	2003-05-01	Raaijmakers et al.	Applicant
US2003/0089942(A1)	2003-05-01	Bhattacharyya	Applicant
US2003/0096473(A1)	2003-05-01	Shih et al.	Applicant
US2003/0101927(A1)	2003-06-01	Raaijmakers	Applicant
US2003/0104126(A1)	2003-06-01	Fang et al.	Applicant
US2003/0104710(A1)	2003-06-01	Visokay et al.	Applicant
US2003/0106490(A1)	2003-06-01	Jallepally et al.	Applicant
US2003/0108674(A1)	2003-06-01	Chung et al.	Applicant
US2003/0109114(A1)	2003-06-01	Niwa	Applicant
US2003/0113187(A1)	2003-06-01	Lei et al.	Applicant
US2003/0116087(A1)	2003-06-01	Nguyen et al.	Applicant
US2003/0116804(A1)	2003-06-01	Visokay et al.	Applicant
US2003/0121608(A1)	2003-07-01	Chen et al.	Applicant
US2003/0123216(A1)	2003-07-01	Yoon et al.	Applicant
US2003/0124262(A1)	2003-07-01	Chen et al.	Applicant
US2003/0129826(A1)	2003-07-01	Werkhoven et al.	Applicant
US2003/0133861(A1)	2003-07-01	Bowen et al.	Applicant
US2003/0134508(A1)	2003-07-01	Raaijmakers et al.	Applicant
US2003/0143328(A1)	2003-07-01	Chen et al.	Applicant
US2003/0143839(A1)	2003-07-01	Raaijmakers et al.	Applicant
US2003/0143841(A1)	2003-07-01	Yang et al.	Applicant
US2003/0153181(A1)	2003-08-01	Yoon et al.	Applicant
US2003/0160277(A1)	2003-08-01	Bhattacharyya	Applicant
US2003/0161952(A1)	2003-08-01	Wang et al.	Applicant
US2003/0165615(A1)	2003-09-01	Aaltonen et al.	Applicant
US2003/0168750(A1)	2003-09-01	Basceri et al.	Applicant
US2003/0173586(A1)	2003-09-01	Moriwaki et al.	Applicant
US2003/0185980(A1)	2003-10-01	Endo	Applicant
US2003/0186495(A1)	2003-10-01	Saanila et al.	Applicant
US2003/0188682(A1)	2003-10-01	Tois et al.	Applicant
US2003/0190423(A1)	2003-10-01	Yang et al.	Applicant
US2003/0190497(A1)	2003-10-01	Yang et al.	Applicant
US2003/0190804(A1)	2003-10-01	Glenn et al.	Applicant
US2003/0194493(A1)	2003-10-01	Chang et al.	Applicant
US2003/0194853(A1)	2003-10-01	Jeon	Applicant
US2003/0203616(A1)	2003-10-01	Chang et al.	Applicant
US2003/0205729(A1)	2003-11-01	Basceri et al.	Applicant
US2003/0213987(A1)	2003-11-01	Basceri et al.	Applicant
US2003/0219942(A1)	2003-11-01	Choi et al.	Applicant
US2003/0224217(A1)	2003-12-01	Byun et al.	Applicant
US2003/0224578(A1)	2003-12-01	Chung et al.	Applicant
US2003/0224600(A1)	2003-12-01	Cao et al.	Applicant
US2003/0227033(A1)	2003-12-01	Ahn et al.	Applicant
US2003/0232497(A1)	2003-12-01	Xi et al.	Applicant
US2003/0232501(A1)	2003-12-01	Kher et al.	Applicant
US2003/0232506(A1)	2003-12-01	Metzner et al.	Applicant
US2003/0232511(A1)	2003-12-01	Metzner et al.	Applicant
US2003/0234417(A1)	2003-12-01	Raaijmakers et al.	Applicant
US2003/0235961(A1)	2003-12-01	Metzner et al.	Applicant
US2004/0005749(A1)	2004-01-01	Choi et al.	Applicant
US2004/0007747(A1)	2004-01-01	Visokay et al.	Applicant
US2004/0009307(A1)	2004-01-01	Koh et al.	Applicant
US2004/0009675(A1)	2004-01-01	Eissa et al.	Applicant
US2004/0011504(A1)	2004-01-01	Ku et al.	Applicant
US2004/0013577(A1)	2004-01-01	Ganguli et al.	Applicant
US2004/0013803(A1)	2004-01-01	Chung et al.	Applicant
US2004/0014315(A1)	2004-01-01	Lai et al.	Applicant
US2004/0014320(A1)	2004-01-01	Chen et al.	Applicant
US2004/0015300(A1)	2004-01-01	Ganguli et al.	Applicant
US2004/0016973(A1)	2004-01-01	Rotondaro et al.	Applicant
US2004/0018304(A1)	2004-01-01	Chung et al.	Applicant
US2004/0018747(A1)	2004-01-01	Byun et al.	Applicant
US2004/0023461(A1)	2004-02-01	Ahn et al.	Applicant
US2004/0023462(A1)	2004-02-01	Rotondaro et al.	Applicant
US2004/0028952(A1)	2004-02-01	Cartier et al.	Applicant
US2004/0029321(A1)	2004-02-01	Ang et al.	Applicant
US2004/0033698(A1)	2004-02-01	Lee et al.	Applicant
US2004/0036111(A1)	2004-02-01	Nishikawa et al.	Applicant
US2004/0038554(A1)	2004-02-01	Ahn et al.	Applicant
US2004/0040501(A1)	2004-03-01	Vaartstra	Applicant
US2004/0041320(A1)	2004-03-01	Hodumi	Applicant
US2004/0043149(A1)	2004-03-01	Gordon et al.	Applicant
US2004/0043569(A1)	2004-03-01	Ahn et al.	Applicant
US2004/0043630(A1)	2004-03-01	Vaarstra et al.	Applicant
US2004/0046197(A1)	2004-03-01	Basceri et al.	Applicant
US2004/0048491(A1)	2004-03-01	Jung et al.	Applicant
US2004/0051152(A1)	2004-03-01	Nakajima	Applicant
US2004/0053484(A1)	2004-03-01	Kumar et al.	Applicant
US2004/0077182(A1)	2004-04-01	Lim et al.	Applicant
US2004/0077183(A1)	2004-04-01	Chung et al.	Applicant
US2004/0078723(A1)	2004-04-01	Gross et al.	Applicant
US2004/0187304(A1)	2004-09-01	Chen et al.	Applicant
US2004/0203254(A1)	2004-10-01	Conley, Jr. et al.	Applicant
US2004/0214354(A1)	2004-10-01	Conley, Jr. et al.	Applicant
US2004/0216670(A1)	2004-11-01	Gutsche et al.	Applicant
US2004/0219784(A1)	2004-11-01	Kang et al.	Applicant
US2004/0224506(A1)	2004-11-01	Choi et al.	Applicant
US2004/0235285(A1)	2004-11-01	Kang et al.	Applicant
US2004/0256351(A1)	2004-12-01	Chung et al.	Applicant
US2005/0006799(A1)	2005-01-01	Brock et al.	Applicant
US2005/0009325(A1)	2005-01-01	Chung et al.	Applicant
US2005/0059240(A1)	2005-03-01	Choi et al.	Applicant
US2005/0064207(A1)	2005-03-01	Senzaki et al.	Applicant
US2005/0070126(A1)	2005-03-01	Senzaki	Applicant
US2005/0104142(A1)	2005-05-01	Narayanan et al.	Applicant
US2005/0153571(A1)	2005-07-01	Senzaki	Applicant
US2005/0233156(A1)	2005-10-01	Senzaki et al.	Applicant
US2005/0255243(A1)	2005-11-01	Senzaki	Applicant
DE2203776	1973-08-01		Applicant
DE19627017(A1)	1997-01-01		Applicant
DE19820147(A1)	1999-01-01		Applicant
EP344352(A1)	1989-12-01		Applicant
EP429270(A2)	1991-05-01		Applicant
EP442290(A1)	1991-08-01		Applicant
EP464515	1992-01-01		Applicant
EP799641(A2)	1997-10-01		Applicant
EP973189	2000-01-01		Applicant
EP973191	2000-01-01		Applicant
EP1146141	2001-10-01		Applicant
EP1167569	2002-01-01		Applicant
EP1170804	2002-01-01		Applicant
EP1321973	2003-06-01		Applicant
FR2626110	1989-07-01		Applicant
FR2692597	1993-12-01		Applicant
GB2355727	2001-05-01		Applicant
JP58-098917	1983-06-01		Applicant
JP58-100419	1983-06-01		Applicant
JP60-065712(A)	1985-04-01		Applicant
JP61-035847	1986-02-01		Applicant
JP61-210623	1986-09-01		Applicant
JP62-069508	1987-03-01		Applicant
JP62-091495	1987-04-01		Applicant
JP62-141717	1987-06-01		Applicant
JP62-167297	1987-07-01		Applicant
JP62-171999	1987-07-01		Applicant
JP62-232919	1987-10-01		Applicant
JP63-062313	1988-03-01		Applicant
JP63-085098	1988-04-01		Applicant
JP63-090833	1988-04-01		Applicant
JP63-222420	1988-09-01		Applicant
JP63-222421	1988-09-01		Applicant
JP63-227007	1988-09-01		Applicant
JP63-252420	1988-10-01		Applicant
JP63-266814	1988-11-01		Applicant
JP64-009895	1989-01-01		Applicant
JP64-009896	1989-01-01		Applicant
JP64-009897	1989-01-01		Applicant
JP64-037832	1989-02-01		Applicant
JP64-082615	1989-03-01		Applicant
JP64-082617	1989-03-01		Applicant
JP64-082671	1989-03-01		Applicant
JP64-082676	1989-03-01		Applicant
JP1-103982	1989-04-01		Applicant
JP1-103996	1989-04-01		Applicant
JP64-090524	1989-04-01		Applicant
JP1-117017	1989-05-01		Applicant
JP1-143221	1989-06-01		Applicant
JP1-143233	1989-06-01		Applicant
JP1-154511	1989-06-01		Applicant
JP1-236657	1989-09-01		Applicant
JP1-245512	1989-09-01		Applicant
JP1-264218	1989-10-01		Applicant
JP1-270593	1989-10-01		Applicant
JP1-272108	1989-10-01		Applicant
JP1-290221	1989-11-01		Applicant
JP1-290222	1989-11-01		Applicant
JP1-296673	1989-11-01		Applicant
JP1-303770	1989-12-01		Applicant
JP1-305894	1989-12-01		Applicant
JP1-313927	1989-12-01		Applicant
JP2-012814	1990-01-01		Applicant
JP2-014513	1990-01-01		Applicant
JP2-017634	1990-01-01		Applicant
JP2-063115	1990-03-01		Applicant
JP2-074029	1990-03-01		Applicant
JP2-074587	1990-03-01		Applicant
JP2-106822	1990-04-01		Applicant
JP2-129913	1990-05-01		Applicant
JP2-162717	1990-06-01		Applicant
JP2-172895	1990-07-01		Applicant
JP2-196092	1990-08-01		Applicant
JP2-203517	1990-08-01		Applicant
JP2-230690	1990-09-01		Applicant
JP2-230722	1990-09-01		Applicant
JP2-246161	1990-10-01		Applicant
JP2-264491	1990-10-01		Applicant
JP2-283084	1990-11-01		Applicant
JP2-304916	1990-12-01		Applicant
JP3-019211	1991-01-01		Applicant
JP3-022569	1991-01-01		Applicant
JP3-023294	1991-01-01		Applicant
JP3-023299	1991-01-01		Applicant
JP3-044967	1991-02-01		Applicant
JP3-048421	1991-03-01		Applicant
JP3-070124	1991-03-01		Applicant
JP3-185716	1991-08-01		Applicant
JP3-208885	1991-09-01		Applicant
JP3-234025	1991-10-01		Applicant
JP3-286522	1991-12-01		Applicant
JP3-286531	1991-12-01		Applicant
JP4-031391	1992-02-01		Applicant
JP4-031396	1992-02-01		Applicant
JP4-100292	1992-04-01		Applicant
JP4-111418	1992-04-01		Applicant
JP4-132214	1992-05-01		Applicant
JP4-132681	1992-05-01		Applicant
JP4-162418	1992-06-01		Applicant
JP4-175299	1992-06-01		Applicant
JP4-186824	1992-07-01		Applicant
JP4-212411	1992-08-01		Applicant
JP4-260696	1992-09-01		Applicant
JP4-273120	1992-09-01		Applicant
JP4-285167	1992-10-01		Applicant
JP4-291916	1992-10-01		Applicant
JP4-325500	1992-11-01		Applicant
JP4-328874	1992-11-01		Applicant
JP5-029228	1993-02-01		Applicant
JP5-047665	1993-02-01		Applicant
JP5-047666	1993-02-01		Applicant
JP5-047668	1993-02-01		Applicant
JP5-074717	1993-03-01		Applicant
JP5-074724	1993-03-01		Applicant
JP5-102189	1993-04-01		Applicant
JP5-160152	1993-06-01		Applicant
JP5-174143	1993-07-01		Applicant
JP5-175145	1993-07-01		Applicant
JP5-182906	1993-07-01		Applicant
JP5-186295	1993-07-01		Applicant
JP5-206036	1993-08-01		Applicant
JP5-234899	1993-09-01		Applicant
JP5-235047	1993-09-01		Applicant
JP5-251339	1993-09-01		Applicant
JP5-270997	1993-10-01		Applicant
JP5-283336	1993-10-01		Applicant
JP5-291152	1993-11-01		Applicant
JP5-304334	1993-11-01		Applicant
JP5-343327	1993-12-01		Applicant
JP5-343685	1993-12-01		Applicant
JP6-045606	1994-02-01		Applicant
JP6-132236	1994-05-01		Applicant
JP6-177381	1994-06-01		Applicant
JP6-196809	1994-07-01		Applicant
JP6-222388	1994-08-01		Applicant
JP6-224138	1994-08-01		Applicant
JP6-230421	1994-08-01		Applicant
JP6-252057	1994-09-01		Applicant
JP6-291048	1994-10-01		Applicant
JP7-070752	1995-03-01		Applicant
JP7-086269	1995-03-01		Applicant
JP7-300649	1995-11-01		Applicant
JP8-181076	1996-07-01		Applicant
JP8-245291	1996-09-01		Applicant
JP8-264530	1996-10-01		Applicant
JP9-260786	1997-10-01		Applicant
JP9-293681	1997-11-01		Applicant
JP10-188840	1998-07-01		Applicant
JP10-190128	1998-07-01		Applicant
JP10-308283	1998-11-01		Applicant
JP2246161	1999-09-01		Applicant
JP11-269652	1999-10-01		Applicant
JP2000-031387	2000-01-01		Applicant
JP2000-058777	2000-02-01		Applicant
JP2000-068072	2000-03-01		Applicant
JP2000-087029	2000-03-01		Applicant
JP2000-138094	2000-05-01		Applicant
JP2000-178735	2000-06-01		Applicant
JP2000-218445	2000-08-01		Applicant
JP2000-319772	2000-11-01		Applicant
JP2000-340883	2000-12-01		Applicant
JP2000-353666	2000-12-01		Applicant
JP2001-020075	2001-01-01		Applicant
JP2001-62244	2001-03-01		Applicant
JP2001-111000(A)	2001-04-01		Applicant
JP2001-152339	2001-06-01		Applicant
JP2001-189312	2001-07-01		Applicant
JP2001-217206	2001-08-01		Applicant
JP2001-220287	2001-08-01		Applicant
JP2001-220294	2001-08-01		Applicant
JP2001-240972	2001-09-01		Applicant
JP2001-254181	2001-09-01		Applicant
JP2001-284042	2001-10-01		Applicant
JP2001-303251	2001-10-01		Applicant
JP2001-328900	2001-11-01		Applicant
JP2002-060944(A)	2002-02-01		Applicant
JP2002-69641(A)	2002-03-01		Applicant
JP2002-93804(A)	2002-03-01		Applicant
JP2002-167672(A)	2002-06-01		Applicant
JP2002-172767(A)	2002-06-01		Applicant
WO90/02216	1990-03-01		Applicant
WO91/10510	1991-07-01		Applicant
WO93/02116	1993-02-01		Applicant
WO96/17107	1996-06-01		Applicant
WO96/18756	1996-06-01		Applicant
WO98/06889	1998-02-01		Applicant
WO98/51838	1998-11-01		Applicant
WO99/01595	1999-01-01		Applicant
WO99/13504	1999-03-01		Applicant
WO99/29924	1999-06-01		Applicant
WO99/41423	1999-08-01		Applicant
WO99/65064	1999-12-01		Applicant
WO/11721	2000-03-01		Applicant
WO/13235	2000-03-01		Applicant
WO/15865	2000-03-01		Applicant
WO/15881(A2)	2000-03-01		Applicant
WO/16377(A2)	2000-03-01		Applicant
WO/54320(A1)	2000-09-01		Applicant
WO/63957(A1)	2000-10-01		Applicant
WO/70674	2000-11-01		Applicant
WO/79019(A1)	2000-12-01		Applicant
WO/79576(A1)	2000-12-01		Applicant
WO1/15220(A1)	2001-03-01		Applicant
WO1/17692	2001-03-01		Applicant
WO1/25502	2001-04-01		Applicant
WO1/27346(A1)	2001-04-01		Applicant
WO1/27347(A1)	2001-04-01		Applicant
WO1/29280(A1)	2001-04-01		Applicant
WO1/29891(A1)	2001-04-01		Applicant
WO1/29893(A1)	2001-04-01		Applicant
WO1/36702(A1)	2001-05-01		Applicant
WO1/40541(A1)	2001-06-01		Applicant
WO1/66832(A2)	2001-09-01		Applicant
WO1/82390	2001-11-01		Applicant
WO1/99166	2001-12-01		Applicant
WO2/01628	2002-01-01		Applicant
WO2/08485	2002-01-01		Applicant
WO2/09167	2002-01-01		Applicant
WO2/27063	2002-04-01		Applicant
WO2/43115	2002-05-01		Applicant
WO2/45167	2002-06-01		Applicant
WO2/45871	2002-06-01		Applicant
WO2/46489	2002-06-01		Applicant
WO2/67319	2002-08-01		Applicant

Non-Patent Literature (81)

Cameron, et al. “Atomic Layer Deposition of SiO2 and TiO2 In Alumina Tubular Membranes: Pore Reduction and Effect of Surface Species on Gas Transport,” Langmuir, vol. 16, No. 19, American Chemical Society, 2000, pp. 7435-7444.Applicant
Dey, et al. “Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function,” Applied Physics Letter, vol. 84, No. 9, Mar. 1, 2004, American Institute of Physics, pp. 1606.Applicant
Eisenbraun, et al. “Atomic Layer Deposition (ALD) of Tantalum-based materials for zero thickness copper barrier applications,” Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No. 01EX461), 2001.Applicant
Elam, et al. “Nucleation and Growth During Tungsten Atomic Layer Deposition on SiO2 Surfaces,” Thin Solid Films, 386, (2001), pp. 41-52.Applicant
Goswami, et al. Transition Metals Show Promise as Copper Barriers, Semiconductor International, ATMI, San Jose—May 1, 2004, Semiconductor International, pp. 1-7.Applicant
Goto, et al. “Atomic layer controlled deposition of silicon nitride with self-limiting mechanism,” Applied Physics Letters, American Institute of Physics, New York, US, vol. 68, No. 23, Jun. 3, 1996, pp. 3257-3259.Applicant
He, et al. “Pulse Deposition of Silicate Films,” Journal of Applied Physics, vol. 94, No. 5, Sep. 1, 2003, pp. 3657-3659.Applicant
Hong, et al. “Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization,” Interconnect Technology Conference, 2004, Proceedings of the IEEE 2004 International, Jun. 7-9, 2004, pp. 9-11.Applicant
Kamiyama, et al. “Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation,” Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on Nov. 6-7, 2003, Piscataway, NJ, USA, IEEE, Nov. 6, 2002, pp. 42-46.Applicant
Kang, et al. “Infrared Spectroscopic Study of Atomic Layer Deposition Mechanism for Hafnium Silicate Thin Films Using HfCI2 [N(SiMe3)2]2 and H2O,” J. Vac. Sci. Technol. A 22(6), Nov./Dec. 2004, American Vacuum Society, pp. 2393-2397.Applicant
Kim, et al. “Atomic Layer Deposition of Low Resistivity and High-Density Tungsten Nitride Thin Film Using B2H6, WF6 and NH3,” Electrochem. Solid-State Lett., vol. 9, Issue 3, (2006), pp. C54-C57.Applicant
Park, et al. “Performance improvement of MOSFET with HfO2-Al2O3 laminate gate dlelectric and CVD-TaN metal gate deposited by TAIMATA,” Electron Devices Meeting, 2003, IEDM '03 Technical Digest. IEEE International Dec. 8-10, 2003, pp. 13.6.1-13.6.4.Applicant
Sekine, et al. “Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current,” International Electron Devices Meeting 2003. IEDM. Technical Digest. Washington, DC, Dec. 8-10, 2003, New York, NY, IEEE, US, Dec. 8, 2003, pp. 103-106.Applicant
Argarwal, et al. “Challenges in Integrating the High-K Gate Dielectric Film to the Conventional CMOS Process Flow”, Mat. Sec. Soc. Sump. Proc. vol. 670 (2001).Applicant
Bader, et al. “Integrated Processing Equipment”, Solid State Technology, Cowan Pub., vol. 33, No. 5 (May 1, 1990), pp. 149-154.Applicant
Balog, et al. “Chemical Vapor Deposition and Characterization of HfO2 Films from Organo-Hafnium Compounds”, Thin Solid Films, 41 (1977) pp. 247-259.Applicant
Bedair, S.M. “Atomic layer epitaxy deposition processes”, J. Vac. Sci. Technol. 12(1) (Jan./Feb. 1994).Applicant
Chatham, et al. “Nitridation of Hafnium Silicate Thin Films”, Mat. Res. Soc. Symp. Proc. vol. 811, Apr. 12-16, 2004, D7.5.1.Applicant
Cheon, et al. “Gas Phase Photoproduction of Diatomic Metal Nitrides During Metal Nitride Laser Chemical Vapor Deposition”, Inorganic Chemistry 1999, 38, pp. 2238-2239.Applicant
Choi, et al. “Stability of TiB2 as a Diffusion Barrier on Silicon”, J. Electrochem. Soc. 138(10) (Oct. 1991), pp. 3062-3067.Applicant
Choi, et al. “The Effect of Annealing on Resistivity of Low Pressure Chemical Vapor Deposited Titanium Diboride”, Journal of Applied Physics, Jun. 1, 1991, pp. 7853-7861.Applicant
Clark-Phelps, et al. “Engineered Tantalum Aluminate and Hafnium Aluminate ALD Films for Ultrathin Dielectric Films with Improved Electrical and Thermal Properties”, Mat. Res. Soc. Symp. Proc. vol. 670 (2001).Applicant
Conley, et al. “Interval Annealing During Alternating Pulse Deposition”, Mat. Res. Soc. Symp. Proc., vol. 811, Apr. 12-16, 2004, D1.3.1.Applicant
Derbyshire, K. “Applications of Integrated processing”, Solid State Technology, US, Cowan Pub., vol. 37, No. 12 (Dec. 1, 1994), pp. 45-47.Applicant
Eisenbraum, et al. “Atomic Layer Deposition (ALD) of Tantalum-based materials for zero thickness copper barrier applications”, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No. 01 EX461) 2001.Applicant
Elers, et al. “NbCl5 as a precursor in atomic layer epitaxy”, Appl. Surf. Sci., vol. 82/83 (1994), pp. 468-474.Applicant
George, et al. “Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry”, Appl. Surf. Sci., vol. 82/83 (1994), pp. 460-467.Applicant
George, et al. “Surface Chemistry for Atomic Layer Growth”, J. Phys. Chem. 1996, 100, 13121-13131.Applicant
Hendrix, et al. “Composition Control of Hf1-xSixO2 Films Deposited on Si by Chemical-vapor Deposition Using Amide Precursors”, Applied Physics Letters, American Institute of Physics, New York, US, vol. 80, No. 13, Apr. 1, 2002, pp. 2362-2364.Applicant
Ho, et al. “Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition”, Applied Physics Letters, American Institute of Physics, New York, US, vol. 81, No. 22, Nov. 25, 2002, pp. 4218-4220.Applicant
Hultman, et al. “Review of the thermal and mechanical stability of TiN-based thin films”, Zeitschrift Fur Metallkunde, 90 (10) (Oct. 1999), pp. 803-813.Applicant
Hwang, et al. “Nanometer-Size αPbO2-type TiO2 in Garnet: A Thermobarometer for Ultrahigh-Pressure Metamorphism”, Science vol. 288 (Apr. 14, 2000), pp. 321-324.Applicant
IBM Tech. Disc. Bull. Knowledge-Based Dynamic Scheduler in Distributed Computer Control, (Jun. 1990), pp. 80-84.Applicant
IBM Tech. Disc. Bull. “Multiprocessor and Multitasking Architecture for Tool Control of the Advanced via Inspection Tools” (May 1992), pp. 190-191.Applicant
Kattelus, et al. “Electrical Properties of Tantalum Based Composite Oxide Films”, Mat. Res. Soc. Symp. Proc., 284 (1993) pp. 511-516.Applicant
Kawahara, et al. “Effects of Hf Sources, Oxidizing Agents, and NH3 radicals on properties of HfAIOx films prepared by atomic layer deposition”, IWGI 2003, TOKYO, Nov. 6, 2003, pp. 32-37.Applicant
Kitigawa, et al. “Hydrogen-mediated low temperature epitaxy of Si in plasma-enhanced chemical vapor deposition”, Applied Surface Science (2000), pp. 30-34.Applicant
Klaus, et al. “Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions”, Surface Review and Letters, vol. 6, Nos. 3 & 4 (1999) pp. 435-448.Applicant
Klaus, et al. “Atomically Controlled Growth of Tungsten and Tungsten Nitride Using Sequential Surface Reactions”, Applied Surface Science, 162-163 (2000) pp. 479-491.Applicant
Kukli, et al. “Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water”, Chemical Vapor Deposition, VCH Publishers, Weinheim, DE, vol. 8, No. 5, Sep. 2002, pp. 199-204.Applicant
Kukli, et al. “Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films from Ta(OC2H5) and H2O”, Journal of the Electrochemical Society, vol. 142, No. 5, May 1995; pp. 1670-1675.Applicant
Kukli, et al. “In situ Study of Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films From Ta(OC2H5)5 and H2O”, Applied Surface Science, vol. 112, Mar. 1997, pp. 236-242.Applicant
Kukli, et al. “Properties of (Nb1-xTax)2O5 Solid Solutions and (Nb1-xTax)2O5-ZrO2 Nanolaminates Grown by Atomic Layer Epitaxy”, 1997; pp. 785-793.Applicant
Kukli, et al. “Properties of Ta20s-Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy”, Journal of the Electrochemical Society, vol. 144, No. 1, Jan. 1997; pp. 300-306.Applicant
Kukli, et al. “Tailoring the Dielectric Properties of HfO2−Ta2O5 Nanolaminates”, Applied Physics Letters, vol. 68, No. 26 (Jun. 24, 1996), pp. 3737-3739.Applicant
Lee, C. “The Preparation of Titanium-Based Thin Film by CVD Using Titanium Chlorides as Precursors”, Chemical Vapor Deposition, 5(2) Mar. 1999, pp. 69-73.Applicant
Lee, S., et al. “Pulsed Nucleation for Ultra-High Aspect Ratio Tungsten Plugfill”; Materials Research Society, 2002, pp. 649-653.Applicant
Martensson, et al. “Atomic Layer Epitaxy of Copper, Growth & Selectivity in the Cu (II)-2,2.6,6-Tetramethyl-3, 5-Heptanedion ATE/H2 Process”, J. Electrochem. Soc., 145(8) (Aug. 1998), pp. 2926-2931.Applicant
Martensson, et al. “Use of Atomic Layer Epitaxy for Fabrication of Si/TiN/Cu Structures”, J. Vac. Sci. & Tech. B, vol. 17, No. 5, (Sep. 1999), pp. 2122-2128.Applicant
Maydan, D. “Cluster Tools for Fabrication of Advanced devices” Jap. J. of Applied Physics, Extended Abstracts, 22nd Conference Solid State Devices and Materials (1990), pp. 849-852, XP000178141.Applicant
McGeachin, S., “Synthesis and properties of some β-diketimines derived from acetylacetone, and their metal complexes”, Canadian J. of Chemistry, vol. 46 (1968), pp. 1903-1912.Applicant
Min, et al. “Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and NH3”, Mat. Res. Soc. Sm. Proc. vol. 514 (1998), pp. 337-342.Applicant
Min, et al. “Chemcial Vapor Deposition of Ti-Si-N Films With Alternating Source Supply”, Mat. Rec. Soc. Symp. Proc. Vol. (1999), pp. 207-210.Applicant
Min, et al. “Metal-organic Atomic-layer Deposition of Titanium-silicon-nitride films”, Applied Physics Letters, vol. 75, No. 11 (Sep. 13, 1999), pp. 1521-1523.Applicant
Niinisto, et al. “Synthesis of Oxide Thin Films and Overlayers by Atomic Layer Epitaxy for Advanced Applications”, Materials Science and Engineering B41 (1996), pp. 23-29.Applicant
Ohba, et al. Thermal Decomposition of Methylhydrazine and Deposition Properties of CVD TiN Thin Films, Conference Proceedings, Advanced Metallization for ULSI Applications in 1993 (1994), pp. 143-149.Applicant
Ohshita, et al. “Hf1-xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system”, Preparation and Characterization, Elsevier Sequioa, NL, vol. 416, No. 1-2, Sep. 2, 2002, pp. 208-211.Applicant
Oshita, et al. “HfO2 Growth by Low-Pressure Chemical Vapor Deposition Using the Hf(N(C2H5)2)4/O2 Gas System”, Journal of Crystal Growth 233 (2001) pp. 292-297.Applicant
PCT International Search Report form PCT/US01/20310, Dated Feb. 14, 2002 (AMAT/4714.PC).Applicant
Ritala, et al. Ann. Acad. Sci. Fenn. Ser. A II. Chemica 257 (1994), pp. 1-48.Applicant
Ritala, et al. “Atomic Force Microscopy Study of Titanium Dioxide Thin Films Grown by Atomic Layer Epitaxy”, Thin Solid Films, vol. 228, No. 1-2 (May 15, 1993), pp. 32-35.Applicant
Ritala, et al. “Atomic Layer Epitaxy Growth of TiN Thin Films From TiI4 and NH4”, J. Electrochem. Soc., vol. 145, No. 8 (Aug. 1998) pp. 2914-2920.Applicant
Ritala, et al. “Atomic Layer Epitaxy Growth of TiN Thin Films”, J. Electrochem. Soc., vol. 142, No. 8, Aug. 1995, pp. 2731-2737.Applicant
Ritala, et al. “Development of Crystallinity and Morphology in Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy”, Thin Solid Films, vol. 250, No. 1-2, (Oct. 1, 1994), pp. 72-80.Applicant
Ritala, et al. “Effects of Intermediate Zinc Pulses on Properties of TiN and NbN Films by Atomic Layer Epitaxy”, Applied Surface Science, vol. 120, No. 3-4, Dec. 1997, pp. 199-212.Applicant
Ritala, et al. “Growth of Titanium Dioxide Thin Films by Atomic Layer Epitaxy”, Thin Solid Films, vol. 225, No. 1-2 (Mar. 25, 1993) pp. 288-295.Applicant
Ritala, et al. “Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition”, Chem. Vap. Deposition 1999, 5, No. 1, pp. 7-9.Applicant
Ritala, et al. “Surface Roughness Reduction in Atomic Layer Epitaxy Growth of Titanium Dioxide Thin Films”, Thin Solid-Films, vol. 249, No. 2 (Sep. 1, 1994), pp. 155-162.Applicant
Rossnagel, et al. “Plasma-enhanced Atomic Layer Deposition of Ta and Ti for Interconnect Diffusion Barriers”, J. Vacuum Sci. & Tech. B., vol. 18, No. 4 (Jul. 2000), pp. 2016-2020.Applicant
Scheper, et al. “Low-temperature deposition of titanium nitride films from dialkylhydrazine-based precursors”, Materials Science in Semiconductor Processing 2 (1999), pp. 149-157.Applicant
Senzaki, et al. “A Novel Atomic Layer Deposition Process to Deposit Hafnium Silicate Thin Films”, Electrochemical Society Proceedings vol. 2004-01, pp. 264-270.Applicant
Shenai, et al. “Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III-V compounds”, Journal of Crystal Growth 248 (2003) pp. 91-98.Applicant
Sneh, et al. “Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions”, Surface Review and Letters, vol. 6, Nos. 3 & 4 (1999) pp. 435-448.Applicant
Solanki, et al. “Atomic Layer deposition of Copper Seed Layers”, Electrochemical and Solid State Letters, 3(10) (2000), pp. 479-480.Applicant
Suzuki, et al. “A 0.2-μm contact filing by 450° C.-hydrazine-reduced TiN film with low resistivity”, IEDM 92-979, pp. 11.8.1-11.8.3.Applicant
Suzuki, et al. “LPCVD-TiN Using Hydrazine and TiCl4”, VMIC Conference (Jun. 8-9, 1993), pp. 418-423.Applicant
Visokay, et al. “Application of HfSiON as a gate dielectric material”, Applied Physics Letter, American Institute of Physics, New York, US, vol. 80, No. 17, Apr. 29, 2002, pp. 3183-3185.Applicant
Wise, et al. “Diethyldiethoxysilane as a new precursor for SiO2 growth on silicon”, Mat. Res. Soc. Symp. Proc., vol. 334 (1994), pp. 37-43.Applicant
Yamaga, et al. “Atomic layer epitaxy of ZnS by a new gas supplying system in a low-pressure metalorganic vapor phase epitaxy”, J. of Crystal Growth 117 (1992), pp. 152-155.Applicant
Yamaguchi, et al. “Atomic-layer chemical-vapor-deposition of silicon dioxide films with extremely low hydrogen content”, Appl. Surf. Sci., vol. 130-132 (1998), pp. 202-207.Applicant
Yang, et al. “Atomic Layer Deposition of Tungsten Film from WF6/B2H6: Nucleation Layer for Advanced Semiconductor Device”, Conference Proceedings ULSI XVII (2002) Materials Research Society, pp. 655-660.Applicant

Abstract