US 7,020,374 B2Grant

Optical waveguide structure and method for fabricating the same

Issue Date:2006-03-28

•17 Claims

•2 Drawing Sheets

Abstract

An optical waveguide structure (10) is provided. The optical waveguide structure (10) has a monocrystalline substrate (12), an amorphous interface layer (14) overlying the monocrystalline substrate (12) and an accommodating buffer layer (16) overlying the amorphous interface layer (14). An optical waveguide layer (20) overlies the accommodating buffer layer (16).

Metadata

Assignee

Freescale Semiconductor, Inc.

Inventors

Albert Alec Talin
Steven A. Voight

Application Information

Application Number:US 10/356,550

Filing Date:2003-02-03

Priority Date:2003-02-03

Art Unit:2874

Classifications

IPC:

G02B6/10

Patent Drawings (2 sheets)

Description

Field of the Invention

[0001] This invention relates generally to optical waveguide devices and to a method for their fabrication, and more specifically to optical waveguide devices and to the fabrication and use of optical waveguide devices that include a monocrystalline substrate, an accommodating buffer layer, and an amorphous interface layer formed therebetween, which form a compliant substrate that permits the fabrication of a high quality monocrystalline layers that form an optical waveguide device.

Background of the Invention

[0002] Semiconductor devices often include multiple layers of conductive, insulating, and semiconductive layers. Often, the desirable properties of such layers improve with the crystallinity of the layer. For example, light propagation is superior in dielectric films of higher crystalline quality. Similarly, the electron mobility and electron lifetime of semiconductive layers improve as the crystallinity of the layer increases. The free electron concentration of conductive layers and the electron charge displacement and electron energy recoverability of insulative or dielectric films also improve as the crystallinity of these layers increases.

[0003] Attempts have been made to fabricate high quality crystalline optical waveguide devices. However, such attempts typically have succeeded only on bulk oxide substrates. Attempts to grow such devices on a single crystal semiconductor or compound semiconductors substrates, such as germanium, silicon, and various insulators, have generally been unsuccessful because crystal lattice mismatches between the host crystal of the substrate and the grown crystal of the optical waveguide layer have caused the resulting crystal of the optical waveguide layer to be of low crystalline quality.

[0004] Accordingly, a need exists for a semiconductor structure that provides a high quality optical waveguide and for a process for making such a structure. In other words, there is a need for providing the formation of a monocrystalline substrate that is compliant with a high quality monocrystalline optical waveguide material layer so that true two-dimensional growth can be achieved for the formation of quality optical waveguide devices.

Brief Description of the Drawings

[0005] The present invention is illustrated by way of example and not limitation in the accompanying figures, in which like references indicate similar elements, and in which:

[0006] FIGS. 1 and 2 illustrate schematically, in cross section, device structures in accordance with various embodiments of the invention;

[0007] FIG. 3 is a flowchart illustrating a method for fabricating a device structure in accordance with an embodiment of the invention; and

[0008] FIG. 4 is a flowchart illustrating a method for fabricating a device structure in accordance with another embodiment of the invention.

[0009] Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of embodiments of the present invention.

Detailed Description of the Drawings

[0010] FIG. 1 illustrates schematically, in cross section, a portion of an optical waveguide structure 10 in accordance with an embodiment of the invention. Optical waveguide structure 10 comprises a monocrystalline substrate 12, an accommodating buffer layer 16 formed of a monocrystalline material, and a monocrystalline optical waveguide layer 20. In this context, the term “monocrystalline” shall have the meaning commonly used within the semiconductor industry. The term shall refer to materials that are a single crystal or that are substantially a single crystal and shall include those materials having a relatively small number of defects such as dislocations and the like as are commonly found in substrates of silicon or germanium or mixtures of silicon and germanium and epitaxial layers of such materials commonly found in the semiconductor industry.

[0011] Structure 10 also includes an amorphous interface layer 14 positioned between substrate 12 and accommodating buffer layer 16. The amorphous interface layer helps to relieve the strain in the accommodating buffer layer and, by doing so, aids in the growth of a high crystalline quality accommodating buffer layer.

[0012] Substrate 12, in accordance with an embodiment of the invention, is a monocrystalline semiconductor or compound semiconductor material. The material can be of, for example, a material from Group IV of the periodic table. Examples of Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like. Preferably, substrate 12 is a material containing silicon or germanium, and most preferably is high quality monocrystalline silicon as used in the semiconductor industry. Substrate 12 may also be, for example, silicon-on-insulator (SOI), where a thin layer of silicon is on top of an insulating material such as silicon oxide or glass.

[0013] Accommodating buffer layer 16 is preferably a monocrystalline oxide or nitride material selected for its crystalline compatibility with the underlying substrate and with the overlying optical waveguide layer 20. For example, the material could be an oxide or nitride having a lattice structure closely matched to the substrate and to a subsequently applied monocrystalline material layer. Materials that are suitable for the accommodating buffer layer include metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and other perovskite oxide materials, and gadolinium oxide. Additionally, various nitrides such as gallium nitride, aluminum nitride, and boron nitride may also be used for the accommodating buffer layer. Most of these materials are insulators, although strontium ruthenate, for example, is a conductor. Generally, these materials are metal oxides or metal nitrides, and more particularly, these metal oxides or nitrides typically include at least two different metallic elements. In some specific applications, the metal oxides or nitrides may include three or more different metallic elements. Typically, accommodating buffer layer 16 has a thickness of about 2 to about 100 nanometers. Preferably, accommodating buffer layer 16 has a thickness of about 5 nanometers.

[0014] In accordance with one embodiment of the invention, amorphous interface layer 14 is grown on substrate 12 at the interface between substrate 12 and the growing accommodating buffer layer by the oxidation of substrate 12 during the growth of layer 16. The amorphous interface layer 14 serves to relieve strain that might otherwise occur in the monocrystalline accommodating buffer layer as a result of differences in the lattice constants of the substrate and the buffer layer. As used herein, lattice constant refers to the distance between atoms of a cell measured in the plane of the surface. If such strain is not relieved by the amorphous interface layer, the strain may cause defects in the crystalline structure of the accommodating buffer layer. Defects in the crystalline structure of the accommodating buffer layer, in turn, would make it difficult to achieve a high quality crystalline structure in an optical waveguide layer that is formed overlying accommodating buffer layer 16, as described in more detail below. Typically, layer 14 has a thickness in the range of approximately 0.5–5 nm.

[0015] In another exemplary embodiment of the invention, optical waveguide structure 10 may also comprise a monocrystalline optical buffer layer 18. Monocrystalline optical buffer layer 18 overlies accommodating buffer layer 16 and serves to reduce the optical propagation loss to substrate 12. Optical buffer layer 18 may comprise any suitable monocrystalline dielectric material that has an index of refraction smaller that the material that comprises waveguide layer 20. Preferably, the difference between the index of refraction of optical waveguide layer 20 and the index of refraction of optical buffer layer 18 is at least 0.1%. Examples of materials suitable for optical buffer layer 18 comprise SrTiO₃, BaTiO₃, Sr_xBa_1-xTiO₃, Sr_xZr_1-xTiO₃, where (0<x<1), PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), including PZT, PLT, PLZT depending on the values of x and y, Pb(Mg_1/3Nb_2/3)O₃and KNbO₃for tetragonal system, rhombohedral system, orthorhombic system or pseudo cubic system, and LiNbO₃and LiTaO₃for hexagonal system, in ABO₃perovskite type, and Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆in tungsten bronze type and, in addition, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, as well as substituted derivatives of them. The thickness of optical buffer layer 18 suitably depends on the material that comprises optical buffer layer 18. As will be appreciated, in one exemplary embodiment, accommodating buffer layer 16 and optical buffer layer 18 may comprise the same materials; in this embodiment, accommodating buffer layer 16 and optical buffer layer 18 may comprise one continuous layer.

[0016] Monocrystalline optical waveguide layer 20 overlies accommodating buffer layer 16 and may overly optical buffer layer 18, if present. Optical waveguide layer 20 may be formed of any monocrystalline material that is suitable for forming an optical waveguide. Examples of materials suitable for forming optical waveguide layer 20 comprise BaTiO₃, PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), including PZT, PLT, PLZT depending on the values of x and y, Pb(Mg_1/3Nb_2/3)O₃and KNbO₃for tetragonal system, orthorhombic system or pseudo cubic system, and LiNbO₃and LiTaO₃for hexagonal system, in ABO₃perovskite type, and Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆in tungsten bronze type and, in addition, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, as well as substituted derivatives of them. The thickness of optical waveguide layer 20 suitably depends on a desired application.

[0017] In another exemplary embodiment of the invention, optical waveguide structure 10 may also comprise a cladding layer 22, within which optical waveguide layer 20 may be disposed. As illustrated in FIG. 1, cladding layer 22 may overly optical waveguide layer 20. Cladding layer 22 may comprise any suitable dielectric material that has an index of refraction smaller than the material that comprises waveguide layer 20. Preferably, the difference between the index of refraction of optical waveguide layer 20 and the index of refraction of cladding layer 22 is at least 0.1%. Examples of materials suitable for cladding layer 22 comprise SrTiO₃, BaTiO₃, SrxBa_1-xTiO₃, Sr_xZr_1-xTiO₃, where (0<x<1), PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0,), including PZT, PLT, PLZT depending on the values of x and y, Pb(Mg_1/3Nb_2/3)O₃and KNbO₃for tetragonal system, rhombohedral system, orthorhombic system or pseudo cubic system, and LiNbO₃and LiTaO₃for hexagonal system, in ABO₃perovskite type, and Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆in tungsten bronze type and, in addition, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, as well as substituted derivatives of them.

[0018] FIG. 2 illustrates, in cross section, a portion of an optical waveguide structure 30 in accordance with another embodiment of the invention. Structure 30 is similar to the previously described optical waveguide structure 10, as optical waveguide layer 20 is disposed within cladding layer 22. However, in this exemplary embodiment, optical waveguide layer 20 is embedded in a window or trench 24 formed in cladding layer 22, as described in more detail below.

[0019] Referring again to FIGS. 1 and 2, substrate 12 is a monocrystalline substrate such as a monocrystalline silicon or gallium arsenide substrate. The crystalline structure of the monocrystalline substrate is characterized by a lattice constant and by a lattice orientation. In similar manner, accommodating buffer layer 16 is also a monocrystalline material and the lattice of that monocrystalline material is characterized by a lattice constant and a crystal orientation. The lattice constants of the accommodating buffer layer and the monocrystalline substrate should be closely matched or, alternatively, should be such that upon rotation of one crystal orientation with respect to the other crystal orientation, a substantial match in lattice constants is achieved. In this context the terms “substantially equal” and “substantially matched” mean that there is sufficient similarity between the lattice constants to permit the growth of a high quality crystalline layer on the underlying layer.

[0020] In accordance with one embodiment of the invention, substrate 12 is typically a (100) oriented monocrystalline silicon substrate and accommodating buffer layer 16 is a layer of strontium titanate. Substantial (i.e., effective) matching of lattice constants between these two materials is achieved by rotating the crystal orientation of the titanate material by approximately 45° with respect to the crystal orientation of the silicon substrate. The inclusion in the structure of amorphous interface layer 14, a silicon oxide layer in this example, if it is of sufficient thickness, serves to reduce strain in the strontium titanate monocrystalline layer that might result from any mismatch in the lattice constants of the host silicon wafer and the grown strontium titanate layer. As a result, in accordance with an embodiment of the invention, a high quality, monocrystalline strontium titanate layer is achievable.

[0021] Still referring to FIGS. 1 and 2, optical buffer layer 18 is a layer of monocrystalline material that is also characterized by a crystal lattice constant and a crystal orientation. In accordance with one embodiment of the invention, the lattice constant of optical buffer layer 18 may differ from the lattice constant of substrate 12. To achieve high crystalline quality in this monocrystalline layer, the accommodating buffer layer must be of high crystalline quality. In addition, in order to achieve high crystalline quality in optical buffer layer 18, substantial matching between the crystal lattice constant of the host crystal, in this case, the monocrystalline accommodating buffer layer, and the grown crystal is desired. With properly selected materials this substantial matching of lattice constants may be achieved as a result of rotation of the crystal orientation of the grown crystal with respect to the orientation of the host crystal. Similarly, optical waveguide layer 20 is layer of monocrystalline material that is also characterized by a crystal lattice constant and a crystal orientation. To achieve high crystalline quality in optical waveguide layer 20, substantial matching between the crystal lattice constants of optical buffer layer 18 and optical waveguide layer 20 is desired. Again, rotation of the crystal orientation of the optical waveguide layer 20 with respect to the orientation of the optical buffer layer may facilitate substantial matching of the lattice constants of these two layers.

[0022] Referring to FIG. 3, the following example illustrates a process, in accordance with one embodiment of the invention, for fabricating a semiconductor structure such as the structure depicted in FIG. 1. The process starts by providing a monocrystalline semiconductor substrate, as illustrated in step 40. In accordance with an exemplary embodiment of the invention, the substrate comprises silicon or germanium. In accordance with a preferred embodiment of the invention, the semiconductor substrate is silicon having a (100) orientation. The substrate is oriented on axis or, at most, about 6° off axis, and preferably misoriented 1–3° off axis toward the [110] direction. At least a portion of the semiconductor substrate has a bare surface, although other portions of the substrate, as described below, may encompass other structures. The term “bare” in this context means that the surface in the portion of the substrate has been cleaned to remove any oxides, contaminants, or other foreign material. As is well known, bare silicon is highly reactive and readily forms a native oxide. The term “bare” is intended to encompass such a native oxide. A thin silicon oxide may also be intentionally grown on the semiconductor substrate, although such a grown oxide is not essential to the process in accordance with the invention. In order to epitaxially grow a monocrystalline oxide layer overlying the monocrystalline substrate, the native oxide layer must first be removed to expose the crystalline structure of the underlying substrate. The following process is preferably carried out by molecular beam epitaxy (MBE), although other epitaxial processes may also be used in accordance with the present invention. The native oxide can be removed by first thermally depositing a thin layer (preferably 1–3 monolayers) of strontium, barium, a combination of strontium and barium, or other alkaline earth metals or combinations of alkaline earth metals in an MBE apparatus. In the case where strontium is used, the substrate is then heated to a temperature above 720° C. as measured by an optical pyrometer to cause the strontium to react with the native silicon oxide layer. The strontium serves to reduce the silicon oxide to leave a silicon oxide-free surface. The resultant surface may exhibit an ordered (2×1) structure. If an ordered (2×1) structure has not been achieved at this stage of the process, the structure may be exposed to additional strontium until an ordered (2×1) structure is obtained. The ordered (2×1) structure forms a template for the ordered growth of an overlying layer of a monocrystalline oxide. The template provides the necessary chemical and physical properties to nucleate the crystalline growth of an overlying layer.

[0023] It is understood that precise measurement of actual temperatures in MBE equipment, as well as other processing equipment, is difficult, and is commonly accomplished by the use of a pyrometer or by means of a thermocouple placed in close proximity to the substrate. Calibrations can be performed to correlate the pyrometer temperature reading to that of the thermocouple. However, neither temperature reading is necessarily a precise indication of actual substrate temperature. Furthermore, variations may exist when measuring temperatures from one system to another system. For the purpose of this description, typical pyrometer temperatures will be used, and it should be understood that variations may exist in practice due to these measurement difficulties.

[0024] In accordance with an alternate embodiment of the invention, the native silicon oxide can be converted and the substrate surface can be prepared for the growth of a monocrystalline oxide layer by depositing an alkaline earth metal oxide, such as strontium oxide, strontium barium oxide, or barium oxide, onto the substrate surface by MBE at a low temperature and by subsequently heating the structure to a temperature of above 720° C. At this temperature a solid state reaction takes place between the strontium oxide and the native silicon oxide causing the reduction of the native silicon oxide and leaving an ordered (2×1) structure on the substrate surface. If an ordered (2×1) structure has not been achieved at this stage of the process, the structure may be exposed to additional strontium until an ordered (2×1) structure is obtained. Again, this forms a template for the subsequent growth of an ordered monocrystalline oxide layer.

[0025] Following the removal of the silicon oxide from the surface of the substrate, as illustrated in step 42, accommodating buffer layer 16 is deposited. Accommodating buffer layer 16 may be deposited using any suitable process such as chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), or the like. In accordance with one embodiment of the invention, the substrate is cooled to a temperature in the range of about 200–600° C., preferably 350–550° C., and a layer of strontium titanate is grown on the template layer by MBE. The MBE process is initiated by opening shutters in the MBE apparatus to expose strontium, titanium and oxygen sources. The ratio of strontium and titanium is approximately 1:1. The partial pressure of oxygen is initially set at a minimum value to grow stoichiometric strontium titanate at a growth rate of about 0.1–0.8 nm per minute, preferably 0.3–0.5 nm per minute. The stoichiometry of the titanium can be controlled during growth by monitoring RHEED patterns and adjusting the titanium flux.

[0026] After initiating growth of the strontium titanate, the partial pressure of oxygen is increased above the initial minimum value to form the amorphous interface layer, as illustrated in step 44. The overpressure of oxygen causes the growth of an amorphous silicon oxide layer at the interface between the underlying substrate and the strontium titanate layer. This step may be applied either during or after the growth of the strontium titanate layer. The growth of the amorphous silicon oxide layer results from the diffusion of oxygen through the strontium titanate layer to the interface where the oxygen reacts with silicon at the surface of the underlying substrate. The strontium titanate grows as an ordered (100) monocrystal with the (100) crystalline orientation rotated by 45° C. with respect to the underlying substrate. Strain that otherwise might exist in the strontium titanate layer because of the small mismatch in lattice constant between the silicon substrate and the growing crystal is relieved in the amorphous silicon oxide intermediate layer.

[0027] In another exemplary embodiment, after the accommodating buffer layer 16 has been grown to the desired thickness, the optical buffer layer may be formed, as illustrated in step 46. Optical buffer layer 18 may be formed by any suitable process such as MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD or a metal organic decomposition (MOD) process, such as the sol-gel method. In accordance with an exemplary embodiment of the invention, substrate 12 is transferred to suitable processing chamber for deposition of optical buffer layer 18 by sol-gel. A suitable precursor solution for PLZT (9/65/35) is applied to accommodating buffer layer 16. In a preferred embodiment, the precursor solution is spin-coated onto accommodating buffer layer 16, although it will be appreciated that the precursor solution may be applied by other methods, such as by dip coating, spraying, and the like. The precursor solution is spin-coated onto accommodating buffer layer 16, which is rotated at about 3000 rpm, for about 15 seconds to 5 minutes, preferably about 30 seconds. The thickness of the applied spin-coated layer is typically about 30–100 nm. Next, the coating is heated to a temperature of about 50 to 150° C., preferably about 100° C., for solvent evaporation and then is pyrolyzed at a temperature of about 300 to 500° C., preferably about 400° C., for about 30 seconds to about 5 minutes, preferably for about 1 minute, on a hot plate in air. The process of spin-coating followed by hot plate annealing typically may be repeated up to four times (depending on the desired thickness). A final rapid thermal anneal (RTA) then is conducted at a temperature of about 600 to 800° C., preferably about 700° C., for about 30 seconds to about 5 minutes, preferably about 1 minute, in an O₂environment.

[0028] Next, the optical waveguide layer 20 is formed, as illustrated in step 48. Optical waveguide layer 20 may be formed by any suitable process such as MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD or MOD process, such as the sol-gel method. In one exemplary embodiment of the invention, optical waveguide layer 18 is formed by sol-gel. A suitable precursor solution for PZT is applied to the optical buffer layer 18. In a preferred embodiment, the precursor is spin-coated onto optical buffer layer 18, although it will be appreciated that the precursor solution may be applied by other methods, such as by dip coating, spraying and the like. The precursor solution is spin-coated onto optical buffer layer 18, which is rotated at about 3000 rpm, for about 15 seconds to 5 minutes, preferably about 30 seconds. The thickness of the applied spin-coated layer is typically about 30–100 nm. Next, the coating is heated to a temperature of about 50 to 150° C., preferably about 100° C., for solvent evaporation, and then is pyrolyzed at a temperature of about 300 to about 500° C., preferably about 400° C., for about 30 seconds to about 5 minutes, preferably about 1 minute, on a hot plate in air. The process of spin-coating followed by hot plate annealing typically may be repeated up to four times depending on the desired thickness. Next, the amorphous pyrolyzed layer is patterned to a desired waveguide shape. A patterned photoresist layer or other patterned mask layer is formed overlying the pyrolyzed layer and the pyrolyzed layer is etched using any suitable etch process, such as wet etching, reactive ion etching, or dry etching, such as plasma etching or ion beam etching. The patterned resist layer is removed. An epitaxial waveguide layer 20 then is obtained from the patterned amorphous pyrolyzed layer by subjecting the patterned amorphous pyrolyzed layer to RTA at a temperature of about 600 to 800° C., preferably about 700° C., for about 30 seconds to 5 minutes, preferably about 1 minute, in an O₂environment. In another exemplary embodiment of the invention, the amorphous pyrolyzed layer may be subjected to RTA before patterning and etching to form optical waveguide layer 20.

[0029] In another exemplary embodiment, cladding layer 22 then may be formed overlying optical waveguide 20, as illustrated in step 50. Cladding layer 22 may be formed by any suitable process such as MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD or an MOD process, such as the sol-gel method. In accordance with an exemplary embodiment of the invention, cladding layer 22 is formed by sol-gel using the method described above for forming optical buffer layer 18.

[0030] Referring to FIG. 4, the following example illustrates a process, in accordance with one embodiment of the invention, for fabricating a semiconductor structure such as the structure depicted in FIG. 2. Steps 40 through 44 are performed as described above with references to FIG. 3. Step 46 also comprises the same process as step 46 with reference to FIG. 3. However, for purposes of this exemplary embodiment, optical buffer layer 18 may comprise strontium titanate. In accordance with an exemplary embodiment of the invention, optical buffer layer 18 is formed by sol-gel, although it will be appreciated that optical buffer layer 18 may be formed by any suitable process such as MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, other MOD processes, and the like. In this embodiment, a suitable precursor, such as one comprising strontium-ethylhexanoate and titanium-ethylhexanoate precursors, is applied to accommodating buffer layer 16. In a preferred embodiment, the precursor solution is spin-coated onto accommodating buffer layer 16, although it will be appreciated that the precursor solution may be applied by other methods, however, such as by dip coating, spraying, and the like. The precursor solution is spin-coated onto accommodating buffer layer 16, which is rotated at about 3000 rpm, for about 15 seconds to 5 minutes, preferably about 30 seconds. The thickness of the spin-coated layer is typically about 30–100 nm. Next, the coating is heated to a temperature of about 50 to 150° C., preferably about 100° C., for solvent evaporation and then is pyrolyzed at a temperature of about 300 to 500° C., preferably about 400° C., for about 30 seconds to about 5 minutes, preferably for 1 minute, on a hot plate in air. The process of spin-coating followed by hot plate annealing typically may be repeated up to four times (depending on the desired thickness). A final rapid thermal anneal (RTA) then is conducted at a temperature of about 600 to 800° C., preferably about 700° C., for about 30 seconds to about 5 minutes, preferably about 1 minute, in an O₂environment.

[0031] Next, cladding layer 22 then may be formed overlying optical buffer layer 18, as illustrated in step 60. In accordance with an exemplary embodiment of the invention, cladding layer 22 is formed by sol-gel, although it will be appreciated that cladding layer 22 may be formed by an suitable process such as MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, other MOD processes, and the like. A suitable precursor solution for PLZT (9/65/35) is applied to optical buffer layer 18. In a preferred embodiment, the precursor solution is spin-coated onto optical buffer layer 18, although it will be appreciated that the precursor solution may be applied by other methods such as by dip coating, spraying, and the like. The precursor solution is spin-coated onto optical buffer layer 18, which is rotated at about 3000 rpm, for about 15 seconds to 5 minutes, preferably about 30 seconds. The thickness of the spin-coated layer is typically about 30–100 nm. Next, the coating is heated to a temperature of about 50 to 150° C., preferably about 100° C., for solvent evaporation and then is pyrolyzed at a temperature of about 300 to 500° C., preferably about 400° C., for about 30 seconds to about 5 minutes, preferably for 1 minute, on a hot plate in air. The process of spin-coating followed by hot plate annealing typically may be repeated up to four times (depending on the desired thickness). Next, as illustrated in step 62, the amorphous pyrolyzed layer is patterned to form a window or trench of a suitable size and shape for a subsequently embedded waveguide layer. A patterned photoresist layer or other patterned mask layer is formed overlying the pyrolyzed layer and the pyrolyzed layer is etched using any suitable etch process, such as wet etching, reactive ion etching, or dry etching, such as plasma etching or ion beam etching. The patterned resist is removed and a final rapid thermal anneal (RTA) then is conducted at a temperature of about 600 to about 800° C., preferably about 700° C., for about 30 seconds to about 5 minutes, preferably about 1 minute, in an O₂environment to form an epitaxial cladding layer.

[0032] Next, optical waveguide layer 20 may be formed using any suitable process as described above. Preferably, optical waveguide layer 20 is formed by sol-gel. A suitable precursor solution for PZT is applied overlying the cladding layer 22 and within trench 24. In a preferred embodiment, the precursor is spin-coated onto cladding layer 22, although it will be appreciated that the precursor solution may be applied by other methods, such as by dip coating, spraying and the like. The precursor solution is spin-coated onto cladding layer 22, which is rotated at about 3000 rpm, for about 15 seconds to 5 minutes, preferably about 30 seconds. Next, the coating is heated to a temperature of about 50 to 150° C., preferably about 100° C., for solvent evaporation, and then is pyrolyzed at a temperature of about 300 to about 500° C., preferably about 400° C., for about 30 seconds to about 5 minutes, preferably about 1 minute, on a hot plate in air. The process of spin-coating followed by hot plate annealing typically may be repeated up to four times depending on the desired thickness. An epitaxial waveguide layer 20 then is obtained from the amorphous pyrolyzed layer by subjecting the amorphous pyrolyzed layer to RTA at a temperature of about 600 to 800° C., preferably about 700° C., for about 30 seconds to 5 minutes, preferably about 1 minute, in an O₂environment. The epitaxial waveguide layer 20 may then be planarized using any suitable planarization technique such as, for example, wet or dry etching, chemical mechanical planarization, and the like. A top cladding layer (not shown) then may be formed overlying cladding layer 22 and optical waveguide layer 20 using any of the above-described methods.

[0033] The process described above illustrates a process for forming an optical waveguide structure including a silicon substrate, an overlying strontium titanate accommodating buffer layer, a monocrystalline optical waveguide layer comprising PZT and a cladding layer comprising PLZT. By a similar process, other monocrystalline accommodating buffer layers comprising materials such as alkaline earth metal titanates, zirconates, hafnates, tantalates, vanadates, ruthenates, niobates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide can also be grown. Further, by a similar process, other monocrystalline optical waveguide layers and cladding layers comprising other materials can be deposited overlying the monocrystalline accommodating buffer layer.

[0034] From the foregoing description, it should be appreciated that there has been provided, in accordance with various embodiments of the present invention, an optical waveguide structure and a method for fabricating an optical waveguide structure that fully meets the needs set forth above. Although various embodiments of the invention have been described and illustrated with reference to specific embodiments thereof, it is not intended that the invention be limited to such illustrative embodiments. For example, while the optical waveguide structure is described comprising a substrate, an amorphous interface layer, an accommodating buffer layer, an optical buffer layer, an optical waveguide layer and a cladding layer, it will be appreciated that the optical waveguide structure is not limited to these layers and may comprise additional layers. Those of skill in the art will recognize that many variations and modifications of such embodiments are possible without departing from the spirit of the invention. Accordingly, it is intended to encompass within the invention all such modifications and variations as fall within the scope of the appended claims.

[0035] Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any element(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential features or elements of any or all the claims. As used herein, the terms “comprises,” “comprising,” or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Claims

What is claimed is:

1. An optical waveguide structure comprising:

a monocrystalline substrate;

an amorphous oxide material in contact with the monocrystalline substrate;

a monocrystalline metal oxide layer selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material; and

an optical waveguide layer overlying said metal oxide layer,

said structure further comprising a cladding layer overlying said metal oxide layer, said optical waveguide layer disposed at least partially within said cladding layer.

2. The optical waveguide structure of claim 1, further comprising an optical buffer layer overlying said metal oxide layer and underlying said optical waveguide layer.

3. The optical waveguide structure of claim 1, wherein said optical waveguide layer is disposed within a window formed in said cladding layer.

4. The optical waveguide structure of claim 1, wherein said cladding layer overlies said optical waveguide layer.

5. The optical waveguide structure of claim 1, said monocrystalline substrate comprising one of silicon, germanium, a combination of silicon and germanium, a combination of silicon and carbon, a combination of silicon, germanium and carbon, and a silicon-on-insulator.

6. The optical waveguide structure of claim 2, wherein said optical buffer layer comprises a dielectric material that has an index of refraction smaller than an index of refraction of a material that comprises said optical waveguide layer.

7. The optical waveguide structure of claim 6, wherein said optical waveguide layer comprises a dielectric material having a first index of refraction and said optical buffer layer comprises a dielectric material having a second index of refraction and a difference between said first index of refraction and said second index of refraction is at least 0.1%.

8. The optical waveguide structure of claim 2, wherein said optical buffer layer comprises one of SrTiO₃, BaTiO₃, Sr_xBa_1-xTiO₃, Sr_xZr_1-xTiO₃, where (0<x<1), PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), Pb(Mg_1/3Nb_2/3)O₃, KNbO₃, LiNbO₃, LiTaO₃, Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, and substituted derivatives thereof.

9. The optical waveguide structure of claim 1, wherein said optical waveguide layer comprises one of BaTiO₃, PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), Pb(Mg_1/3Nb_2/3)O₃, KNbO₃, LiNbO₃, LiTaO₃, Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, and substituted derivatives thereof.

10. The optical waveguide structure of claim 1, wherein said cladding layer comprises a dielectric material that has an index of refraction that is smaller than an index of refraction of a material that comprises said optical waveguide layer.

11. The optical waveguide structure of claim 10, wherein said optical waveguide layer comprises a dielectric material having a first index of refraction and said cladding layer comprises a dielectric material having a second index of refraction and a difference between said first index of refraction and said second index of refraction is at least 0.1%.

12. The optical waveguide structure of claim 1, wherein said cladding layer comprises one of SrTiO₃, BaTiO₃, Sr_xBa_1-xTiO₃, Sr_xZr_1-xTiO₃, where (0<x<1), PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), Pb(Mg_1/3Nb_2/3)₃, KNbO₃, LiNbO₃, LiTaO₃, Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, and substituted derivatives thereof.

13. The optical waveguide structure of claim 1, said monocrystalline substrate comprising silicon and said amorphous oxide comprising a silicon oxide.

14. The optical waveguide structure of claim 2, wherein said optical buffer layer has a first lattice constant and said metal oxide layer has a second lattice constant, said second lattice constant being substantially matched to said first lattice constant.

15. The optical waveguide structure of claim 2, wherein said optical waveguide layer has a first lattice constant and said optical buffer layer has a second lattice constant, said second lattice constant being substantially matched to said first lattice constant.

16. The optical waveguide structure of claim 1, wherein said amorphous oxide has a thickness in the range of about 0.5 to 5 nm.

17. n optical waveguide structure comprising:

a monocrystalline substrate;

an amorphous interface layer overlying said monocrystalline substrate;

an accommodating buffer layer overlying said amorphous interface layer; and

an optical waveguide layer overlying said accommodating buffer layer,

said optical waveguide structure further comprising a cladding layer comprising one of SrTiO₃, BaTiO₃, Sr_xBa_1-xTiO₃, Sr_xZr_1-xTiO₃, where (0<x<1), PbTiO₃, Pb_xLa_1-x(Zr_yTi_1-y)O₃, where (0.7<x<1.0, 0<y<1.0), Pb(Mg_1/3Nb_2/3)O₃, KNbO₃, LiNbO₃, LiTaO₃, Sr_xBa_1-xNb₂O₆, Pb_xBa_1-xNb₂O₆, Bi₄Ti₃O₁₂, Pb₂KNb₅O₁₅, K₃Li₂Nb₅O₁₅, and substituted derivatives thereof overlying said accommodating buffer layer, said optical waveguide layer disposed at least partially within said cladding layer.

Patent Citations (662)

Patent	Date	Inventor	Cited By
US3670213(A)	1972-06-01	Nakawaga et al.	Applicant
US3758199(A)	1973-09-01	Thaxter	Applicant
US3766370(A)	1973-10-01	Walther	Applicant
US3802967(A)	1974-04-01	Ladany et al.	Applicant
US3818451(A)	1974-06-01	Coleman	Applicant
US3914137(A)	1975-10-01	Huffman et al.	Applicant
US3935031(A)	1976-01-01	Adler	Applicant
US4006989(A)	1977-02-01	Andringa	Applicant
US4084130(A)	1978-04-01	Holton	Applicant
US4120588(A)	1978-10-01	Chaum	Applicant
US4146297(A)	1979-03-01	Alferness et al.	Applicant
US4174422(A)	1979-11-01	Matthews et al.	Applicant
US4174504(A)	1979-11-01	Chenausky et al.	Applicant
US4242595(A)	1980-12-01	Lehovec	Applicant
US4284329(A)	1981-08-01	Smith et al.	Applicant
US4289920(A)	1981-09-01	Hovel	Applicant
US4297656(A)	1981-10-01	Pan	Applicant
US4298247(A)	1981-11-01	Michelet et al.	Applicant
US4378259(A)	1983-03-01	Hasegawa et al.	Applicant
US4392297(A)	1983-07-01	Little	Applicant
US4398342(A)	1983-08-01	Pitt et al.	Applicant
US4404265(A)	1983-09-01	Manasevit	Applicant
US4424589(A)	1984-01-01	Thomas et al.	Applicant
US4439014(A)	1984-03-01	Stacy et al.	Applicant
US4442590(A)	1984-04-01	Stockton et al.	Applicant
US4447116(A)	1984-05-01	King et al.	Applicant
US4452720(A)	1984-06-01	Harada et al.	Applicant
US4459325(A)	1984-07-01	Nozawa et al.	Applicant
US4482422(A)	1984-11-01	McGinn et al.	Applicant
US4482906(A)	1984-11-01	Hovel et al.	Applicant
US4484332(A)	1984-11-01	Hawrylo	Applicant
US4503540(A)	1985-03-01	Nakashima et al.	Applicant
US4523211(A)	1985-06-01	Morimoto et al.	Applicant
US4525871(A)	1985-06-01	Foyt et al.	Applicant
US4594000(A)	1986-06-01	Falk et al.	Applicant
US4626878(A)	1986-12-01	Kuwano et al.	Applicant
US4629821(A)	1986-12-01	Bronstein-Bonte et al.	Applicant
US4661176(A)	1987-04-01	Manasevit	Applicant
US4667088(A)	1987-05-01	Kramer	Applicant
US4667212(A)	1987-05-01	Nakamura	Applicant
US4681982(A)	1987-07-01	Yoshida	Applicant
US4723321(A)	1988-02-01	Saleh	Applicant
US4748485(A)	1988-05-01	Vasudev	Applicant
US4756007(A)	1988-07-01	Qureshi et al.	Applicant
US4772929(A)	1988-09-01	Manchester et al.	Applicant
US4773063(A)	1988-09-01	Hunsperger et al.	Applicant
US4774205(A)	1988-09-01	Choi et al.	Applicant
US4777613(A)	1988-10-01	Shahan et al.	Applicant
US4793872(A)	1988-12-01	Meunier et al.	Applicant
US4802182(A)	1989-01-01	Thornton et al.	Applicant
US4815084(A)	1989-03-01	Scifres et al.	Applicant
US4841775(A)	1989-06-01	Ikeda et al.	Applicant
US4843609(A)	1989-06-01	Ohya et al.	Applicant
US4845044(A)	1989-07-01	Ariyoshi et al.	Applicant
US4846926(A)	1989-07-01	Kay et al.	Applicant
US4855249(A)	1989-08-01	Akasaki et al.	Applicant
US4868376(A)	1989-09-01	Lessin et al.	Applicant
US4872046(A)	1989-10-01	Morkoc et al.	Applicant
US4876208(A)	1989-10-01	Gustafson et al.	Applicant
US4876218(A)	1989-10-01	Pessa et al.	Applicant
US4876219(A)	1989-10-01	Eshita et al.	Applicant
US4882300(A)	1989-11-01	Inoue et al.	Applicant
US4885376(A)	1989-12-01	Verkade	Applicant
US4888202(A)	1989-12-01	Murakami et al.	Applicant
US4889402(A)	1989-12-01	Reinhart	Applicant
US4891091(A)	1990-01-01	Shastry	Applicant
US4896194(A)	1990-01-01	Suzuki	Applicant
US4901133(A)	1990-02-01	Curran et al.	Applicant
US4910164(A)	1990-03-01	Shichijo	Applicant
US4912087(A)	1990-03-01	Aslam et al.	Applicant
US4928154(A)	1990-05-01	Umeno et al.	Applicant
US4934777(A)	1990-06-01	Jou et al.	Applicant
US4952420(A)	1990-08-01	Walters	Applicant
US4959702(A)	1990-09-01	Moyer et al.	Applicant
US4963508(A)	1990-10-01	Umeno et al.	Applicant
US4963949(A)	1990-10-01	Wanlass et al.	Applicant
US4965649(A)	1990-10-01	Zanio et al.	Applicant
US4981714(A)	1991-01-01	Ohno et al.	Applicant
US4984043(A)	1991-01-01	Vinal	Applicant
US4999842(A)	1991-03-01	Huang et al.	Applicant
US5018816(A)	1991-05-01	Murray et al.	Applicant
US5028976(A)	1991-07-01	Ozaki et al.	Applicant
US5051790(A)	1991-09-01	Hammer	Applicant
US5053835(A)	1991-10-01	Horikawa et al.	Applicant
US5055445(A)	1991-10-01	Belt et al.	Applicant
US5055835(A)	1991-10-01	Sutton	Applicant
US5060031(A)	1991-10-01	Abrokwah et al.	Applicant
US5063081(A)	1991-11-01	Cozzette et al.	Applicant
US5063166(A)	1991-11-01	Mooney et al.	Applicant
US5064781(A)	1991-11-01	Cambou et al.	Applicant
US5067809(A)	1991-11-01	Tsubota	Applicant
US5073981(A)	1991-12-01	Giles et al.	Applicant
US5075743(A)	1991-12-01	Behfar-Rad	Applicant
US5081062(A)	1992-01-01	Vasudev et al.	Applicant
US5081519(A)	1992-01-01	Nishimura et al.	Applicant
US5103494(A)	1992-04-01	Mozer	Applicant
US5116461(A)	1992-05-01	Lebby et al.	Applicant
US5119448(A)	1992-06-01	Schaefer et al.	Applicant
US5122679(A)	1992-06-01	Ishii et al.	Applicant
US5122852(A)	1992-06-01	Chan et al.	Applicant
US5127067(A)	1992-06-01	Delcoco et al.	Applicant
US5130762(A)	1992-07-01	Kulick	Applicant
US5132648(A)	1992-07-01	Trinh et al.	Applicant
US5140651(A)	1992-08-01	Soref et al.	Applicant
US5141894(A)	1992-08-01	Bisaro et al.	Applicant
US5143854(A)	1992-09-01	Pirrung et al.	Applicant
US5144409(A)	1992-09-01	Ma	Applicant
US5155658(A)	1992-10-01	Inam et al.	Applicant
US5159413(A)	1992-10-01	Calviello et al.	Applicant
US5163118(A)	1992-11-01	Lorenzo et al.	Applicant
US5166761(A)	1992-11-01	Olson et al.	Applicant
US5173474(A)	1992-12-01	Connell et al.	Applicant
US5173835(A)	1992-12-01	Cornett et al.	Applicant
US5181085(A)	1993-01-01	Moon et al.	Applicant
US5185589(A)	1993-02-01	Krishnaswamy et al.	Applicant
US5188976(A)	1993-02-01	Kume et al.	Applicant
US5191625(A)	1993-03-01	Gustavsson	Applicant
US5194397(A)	1993-03-01	Cook et al.	Applicant
US5194917(A)	1993-03-01	Regener	Applicant
US5198269(A)	1993-03-01	Swartz et al.	Applicant
US5208182(A)	1993-05-01	Narayan et al.	Applicant
US5210763(A)	1993-05-01	Lewis et al.	Applicant
US5216729(A)	1993-06-01	Berger et al.	Applicant
US5221367(A)	1993-06-01	Chisholm et al.	Applicant
US5225031(A)	1993-07-01	McKee et al.	Applicant
US5227196(A)	1993-07-01	Itoh	Applicant
US5238877(A)	1993-08-01	Russell	Applicant
US5244818(A)	1993-09-01	Jokers et al.	Applicant
US5248564(A)	1993-09-01	Ramesh	Applicant
US5260394(A)	1993-11-01	Tazaki et al.	Applicant
US5266355(A)	1993-11-01	Wernberg et al.	Applicant
US5270298(A)	1993-12-01	Ramesh	Applicant
US5280013(A)	1994-01-01	Newman et al.	Applicant
US5281834(A)	1994-01-01	Cambou et al.	Applicant
US5283462(A)	1994-02-01	Stengel	Applicant
US5286985(A)	1994-02-01	Taddiken	Applicant
US5293050(A)	1994-03-01	Chapple-Sokol et al.	Applicant
US5306649(A)	1994-04-01	Hebert	Applicant
US5310707(A)	1994-05-01	Oishi et al.	Applicant
US5312765(A)	1994-05-01	Kanber	Applicant
US5313058(A)	1994-05-01	Friederich et al.	Applicant
US5314547(A)	1994-05-01	Heremans et al.	Applicant
US5315128(A)	1994-05-01	Hunt et al.	Applicant
US5323023(A)	1994-06-01	Fork	Applicant
US5326721(A)	1994-07-01	Summerfelt	Applicant
US5334556(A)	1994-08-01	Guldi	Applicant
US5341444(A)	1994-08-01	Henry et al.	Examiner
US5352926(A)	1994-10-01	Andrews	Applicant
US5356509(A)	1994-10-01	Terranova et al.	Applicant
US5356831(A)	1994-10-01	Calviello et al.	Applicant
US5357122(A)	1994-10-01	Okubora et al.	Applicant
US5358925(A)	1994-10-01	Neville Connell et al.	Applicant
US5362998(A)	1994-11-01	Iwamura et al.	Applicant
US5365477(A)	1994-11-01	Cooper, Jr. et al.	Applicant
US5371734(A)	1994-12-01	Fischer	Applicant
US5372992(A)	1994-12-01	Itozaki et al.	Applicant
US5373166(A)	1994-12-01	Buchan et al.	Applicant
US5387811(A)	1995-02-01	Saigoh	Applicant
US5391515(A)	1995-02-01	Kao et al.	Applicant
US5393352(A)	1995-02-01	Summerfelt	Applicant
US5394489(A)	1995-02-01	Koch	Applicant
US5395663(A)	1995-03-01	Tabata et al.	Applicant
US5397428(A)	1995-03-01	Stoner et al.	Applicant
US5399898(A)	1995-03-01	Rostoker	Applicant
US5404581(A)	1995-04-01	Honjo	Applicant
US5405802(A)	1995-04-01	Yamagata et al.	Applicant
US5406202(A)	1995-04-01	Mehrgardt et al.	Applicant
US5418216(A)	1995-05-01	Fork	Applicant
US5418389(A)	1995-05-01	Watanabe	Applicant
US5420102(A)	1995-05-01	Harshavardhan et al.	Applicant
US5427988(A)	1995-06-01	Sengupta et al.	Applicant
US5430397(A)	1995-07-01	Itoh et al.	Applicant
US5436759(A)	1995-07-01	Dijaii et al.	Applicant
US5438584(A)	1995-08-01	Paoli et al.	Applicant
US5441577(A)	1995-08-01	Sasaki et al.	Applicant
US5442191(A)	1995-08-01	Ma	Applicant
US5442561(A)	1995-08-01	Yoshizawa et al.	Applicant
US5444016(A)	1995-08-01	Abrokwah et al.	Applicant
US5450812(A)	1995-09-01	McKee et al.	Applicant
US5452118(A)	1995-09-01	Maruska	Applicant
US5453727(A)	1995-09-01	Shibasaki et al.	Applicant
US5466631(A)	1995-11-01	Ichikawa et al.	Applicant
US5473047(A)	1995-12-01	Shi	Applicant
US5473171(A)	1995-12-01	Summerfelt	Applicant
US5478653(A)	1995-12-01	Guenzer	Applicant
US5479033(A)	1995-12-01	Baca et al.	Applicant
US5479317(A)	1995-12-01	Ramesh	Applicant
US5480829(A)	1996-01-01	Abrokwah et al.	Applicant
US5481102(A)	1996-01-01	Hazelrigg, Jr.	Applicant
US5482003(A)	1996-01-01	McKee et al.	Applicant
US5484664(A)	1996-01-01	Kitahara et al.	Applicant
US5486406(A)	1996-01-01	Shi	Applicant
US5491461(A)	1996-02-01	Partin et al.	Applicant
US5492859(A)	1996-02-01	Sakaguchi et al.	Applicant
US5494711(A)	1996-02-01	Takeda et al.	Applicant
US5504035(A)	1996-04-01	Rostoker et al.	Applicant
US5504183(A)	1996-04-01	Shi et al.	Applicant
US5511238(A)	1996-04-01	Bayraktaroglu	Applicant
US5512773(A)	1996-04-01	Wolf et al.	Applicant
US5514484(A)	1996-05-01	Nashimoto	Applicant
US5514904(A)	1996-05-01	Onga et al.	Applicant
US5515047(A)	1996-05-01	Yamakido et al.	Applicant
US5515810(A)	1996-05-01	Yamashita et al.	Applicant
US5516725(A)	1996-05-01	Chang et al.	Applicant
US5519235(A)	1996-05-01	Ramesh	Applicant
US5523602(A)	1996-06-01	Horiuchi et al.	Applicant
US5528057(A)	1996-06-01	Yanagase et al.	Applicant
US5528067(A)	1996-06-01	Farb et al.	Applicant
US5528414(A)	1996-06-01	Oakley	Applicant
US5530235(A)	1996-06-01	Stefik et al.	Applicant
US5538941(A)	1996-07-01	Findikoglu et al.	Applicant
US5540785(A)	1996-07-01	Dennard et al.	Applicant
US5541422(A)	1996-07-01	Wolf et al.	Applicant
US5548141(A)	1996-08-01	Morris et al.	Applicant
US5549977(A)	1996-08-01	Jin et al.	Applicant
US5551238(A)	1996-09-01	Prueitt	Applicant
US5552547(A)	1996-09-01	Shi	Applicant
US5553089(A)	1996-09-01	Seki et al.	Applicant
US5556463(A)	1996-09-01	Guenzer	Applicant
US5561305(A)	1996-10-01	Smith	Applicant
US5569953(A)	1996-10-01	Kikkawa et al.	Applicant
US5572052(A)	1996-11-01	Kashihara et al.	Applicant
US5574744(A)	1996-11-01	Gaw et al.	Applicant
US5576879(A)	1996-11-01	Nashimoto	Applicant
US5588995(A)	1996-12-01	Sheldon	Applicant
US5589284(A)	1996-12-01	Summerfelt et al.	Applicant
US5596205(A)	1997-01-01	Reedy et al.	Applicant
US5596214(A)	1997-01-01	Endo	Applicant
US5602418(A)	1997-02-01	Imai et al.	Applicant
US5603764(A)	1997-02-01	Matsuda et al.	Applicant
US5606184(A)	1997-02-01	Abrokwah et al.	Applicant
US5608046(A)	1997-03-01	Cook et al.	Applicant
US5610744(A)	1997-03-01	Ho et al.	Applicant
US5614739(A)	1997-03-01	Abrokwah et al.	Applicant
US5619051(A)	1997-04-01	Endo	Applicant
US5621227(A)	1997-04-01	Joshi	Applicant
US5623439(A)	1997-04-01	Gotoh et al.	Applicant
US5623552(A)	1997-04-01	Lane	Applicant
US5629534(A)	1997-05-01	Inuzuka et al.	Applicant
US5633724(A)	1997-05-01	King et al.	Applicant
US5635433(A)	1997-06-01	Sengupta	Applicant
US5640267(A)	1997-06-01	May et al.	Applicant
US5642371(A)	1997-06-01	Tohyama et al.	Applicant
US5650646(A)	1997-07-01	Summerfelt	Applicant
US5656382(A)	1997-08-01	Nashimoto	Applicant
US5659180(A)	1997-08-01	Shen et al.	Applicant
US5661112(A)	1997-08-01	Hatta et al.	Applicant
US5667586(A)	1997-09-01	Ek et al.	Applicant
US5668048(A)	1997-09-01	Kondo et al.	Applicant
US5670798(A)	1997-09-01	Schetzina	Applicant
US5670800(A)	1997-09-01	Nakao et al.	Applicant
US5674366(A)	1997-10-01	Hayashi et al.	Applicant
US5679965(A)	1997-10-01	Schetzina	Applicant
US5682046(A)	1997-10-01	Takahashi et al.	Applicant
US5686741(A)	1997-11-01	Ohori et al.	Applicant
US5689123(A)	1997-11-01	Major et al.	Applicant
US5696392(A)	1997-12-01	Char et al.	Applicant
US5725641(A)	1998-03-01	MacLeod	Applicant
US5729394(A)	1998-03-01	Sevier et al.	Applicant
US5729641(A)	1998-03-01	Chandonnet et al.	Applicant
US5731220(A)	1998-03-01	Tsu et al.	Applicant
US5733641(A)	1998-03-01	Fork et al.	Applicant
US5734672(A)	1998-03-01	McMinn et al.	Applicant
US5735949(A)	1998-04-01	Mantl et al.	Applicant
US5741724(A)	1998-04-01	Ramdani et al.	Applicant
US5745631(A)	1998-04-01	Reinker	Applicant
US5753300(A)	1998-05-01	Wessels et al.	Applicant
US5753928(A)	1998-05-01	Krause	Applicant
US5753934(A)	1998-05-01	Yano et al.	Applicant
US5754319(A)	1998-05-01	Van De Voorde et al.	Applicant
US5754714(A)	1998-05-01	Suzuki et al.	Applicant
US5760426(A)	1998-06-01	Marx et al.	Applicant
US5760427(A)	1998-06-01	Onda	Applicant
US5760740(A)	1998-06-01	Blodgett	Applicant
US5764676(A)	1998-06-01	Paoli et al.	Applicant
US5767543(A)	1998-06-01	Ooms et al.	Applicant
US5770887(A)	1998-06-01	Tadatomo et al.	Applicant
US5776359(A)	1998-07-01	Schultz et al.	Applicant
US5776621(A)	1998-07-01	Nashimoto	Applicant
US5777350(A)	1998-07-01	Nakamura et al.	Applicant
US5777762(A)	1998-07-01	Yamamoto	Applicant
US5778018(A)	1998-07-01	Yoshikawa et al.	Applicant
US5778116(A)	1998-07-01	Tomich	Applicant
US5780311(A)	1998-07-01	Beasom et al.	Applicant
US5789733(A)	1998-08-01	Jachimowicz et al.	Applicant
US5789845(A)	1998-08-01	Wadaka et al.	Applicant
US5790583(A)	1998-08-01	Ho	Applicant
US5792569(A)	1998-08-01	Sun et al.	Applicant
US5792679(A)	1998-08-01	Nakato	Applicant
US5796648(A)	1998-08-01	Kawakubo et al.	Applicant
US5801072(A)	1998-09-01	Barber	Applicant
US5801105(A)	1998-09-01	Yano et al.	Applicant
US5807440(A)	1998-09-01	Kubota et al.	Applicant
US5810923(A)	1998-09-01	Yano et al.	Applicant
US5812272(A)	1998-09-01	King et al.	Applicant
US5814583(A)	1998-09-01	Itozaki et al.	Applicant
US5825055(A)	1998-10-01	Summerfelt	Applicant
US5825799(A)	1998-10-01	Ho et al.	Applicant
US5827755(A)	1998-10-01	Yonchara et al.	Applicant
US5828080(A)	1998-10-01	Yano et al.	Applicant
US5830270(A)	1998-11-01	McKee et al.	Applicant
US5833603(A)	1998-11-01	Kovacs et al.	Applicant
US5834362(A)	1998-11-01	Miyagaki et al.	Applicant
US5838035(A)	1998-11-01	Ramesh	Applicant
US5844260(A)	1998-12-01	Ohori	Applicant
US5846846(A)	1998-12-01	Suh et al.	Applicant
US5852687(A)	1998-12-01	Wickham	Applicant
US5857049(A)	1999-01-01	Beranek et al.	Applicant
US5858814(A)	1999-01-01	Goossen et al.	Applicant
US5861966(A)	1999-01-01	Ortel	Applicant
US5863326(A)	1999-01-01	Nause et al.	Applicant
US5869845(A)	1999-02-01	Vander Wagt et al.	Applicant
US5872493(A)	1999-02-01	Ella	Applicant
US5873977(A)	1999-02-01	Desu et al.	Applicant
US5874860(A)	1999-02-01	Brunel et al.	Applicant
US5879956(A)	1999-03-01	Seon et al.	Applicant
US5880452(A)	1999-03-01	Plesko	Applicant
US5883564(A)	1999-03-01	Partin	Applicant
US5883996(A)	1999-03-01	Knapp et al.	Applicant
US5886867(A)	1999-03-01	Chivukula et al.	Applicant
US5888296(A)	1999-03-01	Ooms et al.	Applicant
US5889296(A)	1999-03-01	Imamura et al.	Applicant
US5896476(A)	1999-04-01	Wisseman et al.	Applicant
US5907792(A)	1999-05-01	Droopad et al.	Applicant
US5912068(A)	1999-06-01	Jia	Applicant
US5919515(A)	1999-07-01	Yano et al.	Applicant
US5919522(A)	1999-07-01	Baum et al.	Applicant
US5926493(A)	1999-07-01	O'Brien et al.	Applicant
US5926496(A)	1999-07-01	Ho et al.	Applicant
US5937274(A)	1999-08-01	Kondow et al.	Applicant
US5937285(A)	1999-08-01	Abrokwah et al.	Applicant
US5948161(A)	1999-09-01	Kizuki	Applicant
US5953468(A)	1999-09-01	Finnila et al.	Applicant
US5955591(A)	1999-09-01	Imbach et al.	Applicant
US5959879(A)	1999-09-01	Koo	Applicant
US5962069(A)	1999-10-01	Schindler et al.	Applicant
US5963291(A)	1999-10-01	Wu et al.	Applicant
US5966323(A)	1999-10-01	Chen et al.	Applicant
US5977567(A)	1999-11-01	Verdiell	Applicant
US5981400(A)	1999-11-01	Lo	Applicant
US5981976(A)	1999-11-01	Murasato	Applicant
US5981980(A)	1999-11-01	Miyajima et al.	Applicant
US5984190(A)	1999-11-01	Nevill	Applicant
US5985404(A)	1999-11-01	Yano et al.	Applicant
US5986301(A)	1999-11-01	Fukushima et al.	Applicant
US5987011(A)	1999-11-01	Toh	Applicant
US5990495(A)	1999-11-01	Ohba	Applicant
US5995359(A)	1999-11-01	Klee et al.	Applicant
US5995528(A)	1999-11-01	Fukunaga et al.	Applicant
US5997638(A)	1999-12-01	Copel et al.	Applicant
US6002375(A)	1999-12-01	Corman et al.	Applicant
US6008762(A)	1999-12-01	Nghiem	Applicant
US6011641(A)	2000-01-01	Shin et al.	Applicant
US6011646(A)	2000-01-01	Mirkarimi et al.	Applicant
US6013553(A)	2000-01-01	Wallace et al.	Applicant
US6020222(A)	2000-02-01	Wollesen	Applicant
US6022140(A)	2000-02-01	Fraden et al.	Applicant
US6022410(A)	2000-02-01	Yu et al.	Applicant
US6022671(A)	2000-02-01	Binkley et al.	Applicant
US6022963(A)	2000-02-01	McGall et al.	Applicant
US6023082(A)	2000-02-01	McKee et al.	Applicant
US6028853(A)	2000-02-01	Haartsen	Applicant
US6039803(A)	2000-03-01	Fitzgerald et al.	Applicant
US6045626(A)	2000-04-01	Yano et al.	Applicant
US6046464(A)	2000-04-01	Schetzina	Applicant
US6048751(A)	2000-04-01	D'Asaro et al.	Applicant
US6049702(A)	2000-04-01	Tham et al.	Applicant
US6051858(A)	2000-04-01	Uchida et al.	Applicant
US6051874(A)	2000-04-01	Masuda	Applicant
US6055179(A)	2000-04-01	Koganei et al.	Applicant
US6058131(A)	2000-05-01	Pan	Applicant
US6059895(A)	2000-05-01	Chu et al.	Applicant
US6064078(A)	2000-05-01	Northrup et al.	Applicant
US6064092(A)	2000-05-01	Park	Applicant
US6078717(A)	2000-06-01	Nashimoto et al.	Applicant
US6087681(A)	2000-06-01	Shakuda	Applicant
US6083697(A)	2000-07-01	Beecher et al.	Applicant
US6088216(A)	2000-07-01	Laibowitz et al.	Applicant
US6090659(A)	2000-07-01	Laibowitz et al.	Applicant
US6093302(A)	2000-07-01	Montgomery	Applicant
US6096584(A)	2000-08-01	Ellis-Monaghan et al.	Applicant
US6100578(A)	2000-08-01	Suzuki	Applicant
US6103008(A)	2000-08-01	McKee et al.	Applicant
US6103403(A)	2000-08-01	Grigorian et al.	Applicant
US6107653(A)	2000-08-01	Fitzgerald	Applicant
US6107721(A)	2000-08-01	Lakin	Applicant
US6108125(A)	2000-08-01	Yano	Applicant
US6110840(A)	2000-08-01	Yu	Applicant
US6113690(A)	2000-09-01	Yu et al.	Applicant
US6114996(A)	2000-09-01	Nghiem	Applicant
US6121642(A)	2000-09-01	Newns	Applicant
US6121647(A)	2000-09-01	Yano et al.	Applicant
US6128178(A)	2000-10-01	Newns	Applicant
US6134114(A)	2000-10-01	Ungermann et al.	Applicant
US6136666(A)	2000-10-01	So	Applicant
US6137603(A)	2000-10-01	Henmi	Applicant
US6139483(A)	2000-10-01	Seabaugh et al.	Applicant
US6140746(A)	2000-10-01	Miyashita et al.	Applicant
US6143072(A)	2000-11-01	McKee et al.	Applicant
US6143366(A)	2000-11-01	Lu	Applicant
US6146906(A)	2000-11-01	Inoue et al.	Applicant
US6150239(A)	2000-11-01	Goesele et al.	Applicant
US6151240(A)	2000-11-01	Suzuki	Applicant
US6153010(A)	2000-11-01	Kiyoku et al.	Applicant
US6153454(A)	2000-11-01	Krivokapic	Applicant
US6156581(A)	2000-12-01	Vaudo et al.	Applicant
US6173474(B1)	2001-01-01	Conrad	Applicant
US6174755(B1)	2001-01-01	Manning	Applicant
US6175497(B1)	2001-01-01	Tseng et al.	Applicant
US6175555(B1)	2001-01-01	Hoole	Applicant
US6180252(B1)	2001-01-01	Farrell et al.	Applicant
US6180486(B1)	2001-01-01	Leobandung et al.	Applicant
US6181920(B1)	2001-01-01	Dent et al.	Applicant
US6184044(B1)	2001-02-01	Sone et al.	Applicant
US6184144(B1)	2001-02-01	Lo	Applicant
US6191011(B1)	2001-02-01	Gilboa et al.	Applicant
US6194753(B1)	2001-02-01	Seon et al.	Applicant
US6197503(B1)	2001-03-01	Vo-Dinh et al.	Applicant
US6204525(B1)	2001-03-01	Sakurai et al.	Applicant
US6204737(B1)	2001-03-01	Ella	Applicant
US6208453(B1)	2001-03-01	Wessels et al.	Applicant
US6210988(B1)	2001-04-01	Howe et al.	Applicant
US6211096(B1)	2001-04-01	Allman et al.	Applicant
US6222654(B1)	2001-04-01	Frigo	Applicant
US6224669(B1)	2001-05-01	Yi et al.	Applicant
US6225051(B1)	2001-05-01	Sugiyama et al.	Applicant
US6229159(B1)	2001-05-01	Suzuki	Applicant
US6232242(B1)	2001-05-01	Hata et al.	Applicant
US6232806(B1)	2001-05-01	Woeste et al.	Applicant
US6232910(B1)	2001-05-01	Bell et al.	Applicant
US6233435(B1)	2001-05-01	Wong	Applicant
US6235145(B1)	2001-05-01	Li et al.	Applicant
US6238946(B1)	2001-05-01	Ziegler	Applicant
US6239449(B1)	2001-05-01	Fafard et al.	Applicant
US6253649(B1)	2001-05-01	Kawahara et al.	Applicant
US6241821(B1)	2001-06-01	Yu et al.	Applicant
US6242686(B1)	2001-06-01	Kishimoto et al.	Applicant
US6248459(B1)	2001-06-01	Wang et al.	Applicant
US6248621(B1)	2001-06-01	Wilk et al.	Applicant
US6252261(B1)	2001-06-01	Usui et al.	Applicant
US6255198(B1)	2001-07-01	Linthicum et al.	Applicant
US6256426(B1)	2001-07-01	Duchet	Applicant
US6256441(B1)	2001-07-01	Ogawa	Examiner
US6265749(B1)	2001-07-01	Gardner et al.	Applicant
US6268269(B1)	2001-07-01	Lee et al.	Applicant
US6271619(B1)	2001-08-01	Yamada et al.	Applicant
US6275122(B1)	2001-08-01	Speidell et al.	Applicant
US6277436(B1)	2001-08-01	Stauf et al.	Applicant
US6278137(B1)	2001-08-01	Shimoyama et al.	Applicant
US6278138(B1)	2001-08-01	Suzuki	Applicant
US6278523(B1)	2001-08-01	Gorecki	Applicant
US6278541(B1)	2001-08-01	Baker	Applicant
US6291319(B1)	2001-09-01	Yu et al.	Applicant
US6291866(B1)	2001-09-01	Wallace	Applicant
US6297842(B1)	2001-10-01	Koizumi et al.	Applicant
US6300615(B1)	2001-10-01	Shinohara et al.	Applicant
US6306668(B1)	2001-10-01	McKee et al.	Applicant
US6307996(B1)	2001-10-01	Nashimoto et al.	Applicant
US6312819(B1)	2001-11-01	Jia et al.	Applicant
US6313486(B1)	2001-11-01	Kencke et al.	Applicant
US6316785(B1)	2001-11-01	Nunoue et al.	Applicant
US6316832(B1)	2001-11-01	Tsuzuki et al.	Applicant
US6319730(B1)	2001-11-01	Ramdani et al.	Applicant
US6320238(B1)	2001-11-01	Kizilyalli et al.	Applicant
US6326637(B1)	2001-12-01	Parkin et al.	Applicant
US6326645(B1)	2001-12-01	Kadota	Applicant
US6326667(B1)	2001-12-01	Sugiyama et al.	Applicant
US6329277(B1)	2001-12-01	Liu et al.	Applicant
US6338756(B1)	2002-01-01	Dietze	Applicant
US6339664(B1)	2002-01-01	Farjady et al.	Applicant
US6340788(B1)	2002-01-01	King et al.	Applicant
US6341851(B1)	2002-01-01	Takayama et al.	Applicant
US6343171(B1)	2002-01-01	Yoshimura et al.	Applicant
US6345424(B1)	2002-02-01	Hasegawa et al.	Applicant
US6348373(B1)	2002-02-01	Ma et al.	Applicant
US6359330(B1)	2002-03-01	Goudard	Applicant
US6362017(B1)	2002-03-01	Manabe et al.	Applicant
US6362558(B1)	2002-03-01	Fukui	Applicant
US6367699(B1)	2002-04-01	Ackley	Applicant
US6372356(B1)	2002-04-01	Thornton et al.	Applicant
US6372813(B1)	2002-04-01	Johnson et al.	Applicant
US6389209(B1)	2002-05-01	Suhir	Applicant
US6391674(B1)	2002-05-01	Ziegler	Applicant
US6392257(B1)	2002-05-01	Ramdani et al.	Applicant
US6393167(B1)	2002-05-01	Davis et al.	Applicant
US6404027(B1)	2002-06-01	Hong et al.	Applicant
US6410941(B1)	2002-06-01	Taylor et al.	Applicant
US6410947(B1)	2002-06-01	Wada	Applicant
US6411756(B1)	2002-06-01	Sadot et al.	Applicant
US6415140(B1)	2002-07-01	Benjamin et al.	Applicant
US6417059(B1)	2002-07-01	Huang	Applicant
US6419849(B1)	2002-07-01	Qiu et al.	Applicant
US6427066(B1)	2002-07-01	Grube	Applicant
US6432546(B1)	2002-08-01	Ramesh et al.	Applicant
US6438281(B1)	2002-08-01	Tsukamoto et al.	Applicant
US6445724(B1)	2002-09-01	Abeles	Applicant
US6461927(B1)	2002-10-01	Mochizuki et al.	Applicant
US6462360(B1)	2002-10-01	Higgins, Jr. et al.	Applicant
US6493497(B1)	2002-12-01	Ramdani et al.	Examiner
US6498358(B1)	2002-12-01	Lach et al.	Applicant
US6501121(B1)	2002-12-01	Yu et al.	Applicant
US6524651(B1)	2003-02-01	Gan et al.	Applicant
US6355945(B1)	2003-03-01	Kadota et al.	Applicant
US6528374(B1)	2003-03-01	Bojarczuk, Jr. et al.	Applicant
US6538359(B1)	2003-03-01	Hiraku et al.	Applicant
US6589887(B1)	2003-07-01	Dalton et al.	Applicant
US6678452(B1)	2004-01-01	Bloechl et al.	Examiner
US2001/0013313(A1)	2001-08-01	Droopad et al.	Applicant
US2001/0055820(A1)	2001-12-01	Sakurai et al.	Applicant
US2002/0006245(A1)	2002-01-01	Kubota et al.	Applicant
US2002/0008234(A1)	2002-01-01	Emrick	Applicant
US2002/0021855(A1)	2002-02-01	Kim	Applicant
US2002/0030246(A1)	2002-03-01	Elsenbeiser et al.	Applicant
US2002/0047123(A1)	2002-04-01	Ramdani et al.	Applicant
US2002/0047143(A1)	2002-04-01	Ramdani et al.	Applicant
US2002/0052061(A1)	2002-05-01	Fitzgerald	Applicant
US2002/0072245(A1)	2002-06-01	Ooms et al.	Applicant
US2002/0076878(A1)	2002-06-01	Wasa et al.	Applicant
US2002/0131675(A1)	2002-09-01	Litvin	Applicant
US2002/0179000(A1)	2002-12-01	Lee et al.	Applicant
US2002/0181829(A1)	2002-12-01	Margalit et al.	Examiner
US2004/0151463(A1)	2004-08-01	Talin et al.	Examiner
DE19607107	1997-08-01		Applicant
DE19712496	1997-10-01		Applicant
DE19829609	2000-01-01		Applicant
DE10017137	2000-10-01		Applicant
EP247722	1987-12-01		Applicant
EP250171	1987-12-01		Applicant
EP300499	1989-01-01		Applicant
EP309270	1989-03-01		Applicant
EP331467	1989-09-01		Applicant
EP342937	1989-11-01		Applicant
EP392714	1990-10-01		Applicant
EP455526	1991-06-01		Applicant
EP483993	1992-05-01		Applicant
EP494514	1992-07-01		Applicant
EP514018	1992-11-01		Applicant
EP538611	1993-04-01		Applicant
EP581239	1994-02-01		Applicant
EP602568	1994-06-01		Applicant
EP607435	1994-07-01		Applicant
EP630057	1994-12-01		Applicant
EP682266	1995-11-01		Applicant
EP711853	1996-05-01		Applicant
EP766292	1997-04-01		Applicant
EP777379	1997-06-01		Applicant
EP810666	1997-12-01		Applicant
EP828287	1998-03-01		Applicant
EP875922	1998-11-01		Applicant
EP881669	1998-12-01		Applicant
EP884767	1998-12-01		Applicant
EP926739	1999-06-01		Applicant
EP957522	1999-11-01		Applicant
EP964259	1999-12-01		Applicant
EP964453	1999-12-01		Applicant
EP993027	2000-04-01		Applicant
EP999600	2000-05-01		Applicant
EP1001468	2000-05-01		Applicant
EP1037272	2000-09-01		Applicant
EP1043426	2000-10-01		Applicant
EP1043427	2000-10-01		Applicant
EP1043765	2000-10-01		Applicant
EP1069605	2001-01-01		Applicant
EP1069606	2001-01-01		Applicant
EP1085319	2001-03-01		Applicant
EP1109212	2001-06-01		Applicant
EP1176230	2002-01-01		Applicant
FR2779843	1999-12-01		Applicant
GB1319311	1970-06-01		Applicant
GB2152315	1985-07-01		Applicant
GB2335792	1999-09-01		Applicant
JP52-88354	1977-07-01		Applicant
JP52-89070	1977-07-01		Applicant
JP52-135684	1977-11-01		Applicant
JP54-134554	1979-10-01		Applicant
JP55-87424	1980-07-01		Applicant
JP58-075868	1983-05-01		Applicant
JP58-213412	1983-12-01		Applicant
JP59-044004	1984-03-01		Applicant
JP59-073498	1984-04-01		Applicant
JP59066183	1984-04-01		Applicant
JP60-161635	1985-08-01		Applicant
JP60-210018	1985-10-01		Applicant
JP60-212018	1985-10-01		Applicant
JP61-36981	1986-02-01		Applicant
JP61-63015	1986-04-01		Applicant
JP61-108187	1986-05-01		Applicant
JP63-34994	1988-02-01		Applicant
JP63-131104	1988-06-01		Applicant
JP63-198365	1988-08-01		Applicant
JP63-289812	1988-11-01		Applicant
JP64-50575	1989-02-01		Applicant
JP64-52329	1989-02-01		Applicant
JP1-102435	1989-04-01		Applicant
JP1-179411	1989-07-01		Applicant
JPHEI2-391	1990-01-01		Applicant
JP2051220	1990-02-01		Applicant
JP3-41783	1991-02-01		Applicant
JP3046384	1991-02-01		Applicant
JP3-188619	1991-08-01		Applicant
JP5-48072	1993-02-01		Applicant
JP5-086477	1993-04-01		Applicant
JP5-152529	1993-06-01		Applicant
JP5150143	1993-06-01		Applicant
JP5-238894	1993-09-01		Applicant
JP5-291299	1993-11-01		Applicant
JP6-069490	1994-03-01		Applicant
JP6-232126	1994-08-01		Applicant
JP6-291299	1994-10-01		Applicant
JP6-334168	1994-12-01		Applicant
JP812494	1996-01-01		Applicant
JP9-67193	1997-03-01		Applicant
JP9-82913	1997-03-01		Applicant
JP10-256154	1998-09-01		Applicant
JP10-269842	1998-10-01		Applicant
JP10-303396	1998-11-01		Applicant
JP10-321943	1998-12-01		Applicant
JP11135614	1999-05-01		Applicant
JP11-238683	1999-08-01		Applicant
JP11-260835	1999-09-01		Applicant
JP11340542	1999-12-01		Applicant
JP2000-068466	2000-03-01		Applicant
JP20001645	2000-06-01		Applicant
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JP2000-351692	2000-12-01		Applicant
JP2001-196895	2001-07-01		Applicant
JP2002-9366	2002-01-01		Applicant
WO92/10875	1992-06-01		Applicant
WO93/07647	1993-04-01		Applicant
WO94/03908	1994-02-01		Applicant
WO95/02904	1995-01-01		Applicant
WO97/45827	1997-12-01		Applicant
WO98/05807	1998-01-01		Applicant
WO98/20606	1998-05-01		Applicant
WO99/14797	1999-03-01		Applicant
WO99/14804	1999-03-01		Applicant
WO99/19546	1999-04-01		Applicant
WO99/63580	1999-12-01		Applicant
WO99/67882	1999-12-01		Applicant
WO/06812	2000-02-01		Applicant
WO/16378	2000-03-01		Applicant
WO/33363	2000-06-01		Applicant
WO/48239	2000-08-01		Applicant
WO1/04943(A1)	2001-01-01		Applicant
WO1/16395	2001-03-01		Applicant
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WO2/099885	2002-12-01		Applicant
WO3/012874	2003-02-01		Applicant

Non-Patent Literature (168)

Peter Weiss; “Speed demon gets hooked on silicon”; Science News Online; Sep. 15, 2001; pp. 1-3.Applicant
“Motorola Develops New Super-Fast Chip”; USA Today; Sep. 4, 2001.Applicant
Lori Valigra; “Motorola Lays GaAs on Si Wafer”; AsiaBizTech; Nov. 2001pp. 1-3.Applicant
“Holy Grail! Motorola Claims High-Yield GaAs Breakthrough”; Micromagazine.com (no date available); pp. 1-3.Applicant
Jong-Gui Yoon; “Growth of Ferroelectric LiNbO3 Thin Film on MgO-Buffered Si by the Sol-Gel Method”; Journal of the Korean Physical Society (Proc. Suppl.); vol. 29, Nov. 1996; pp. S648-S651.Applicant
V. Bornand et al.; “Desposition of LiTaO3 thin films by pyrosol process”; Thin Solid Films 304 (1997); pp. 239-244.Applicant
R. Droopad et al.; “Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy”; Materials Science and Engineering B87 (2001); pp. 292-296.Applicant
A.K. Sharma et al.; “Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy”; Applied Physics Letters, vol. 76, No. 11; Mar. 13, 2000; pp. 1458-1460.Applicant
Dwight C. Streit et al; “High Reliability GaAs-AlGaAs HBT's by MBE with Be Base Doping and InGaAs Emitter Contacts”; 8179 Ieee Electron Device Letters; 12(1991) Sep., No. 9, New York, US.Applicant
C. Y. Hung et al; “Piezoelectrically induced stress tuning of electro-optic devices”; 320 Applied Physics Letters; 59(1991) Dec. 30, No. 27, New York, US.Applicant
J. Piprek; “Heat Flow Analysis of Long-Wvelength VCSELs with Various DBR Materials”; University of Delaware, Materials Science, Newark, DE, 19716-3106; Oct. 31, 1994; pp. 286-287.Applicant
P. Mackowiak et al.; “Some aspects of designing an efficient nitride VCSEL resonator”; J. Phys. D: Appl. Phys. 34(2001); pp. 954-958.Applicant
M.R. Wilson et al.; GaAs-On-Si: A GaAs IC Manufacturer's Perspective; GaAs IC Symposium, IEEE, 1988; pp. 243-246.Applicant
Y. Kitano et al.; “Thin Film crystal growth of BaZrO3 at low oxygen partial pressure”; Journal of Crystal Growth 243 (2002); pp. 164-169.Applicant
M.E. Hawley; et al; “Microstructural Study of Colossal Magneto-Resistive Films As a Function of Growth Temperature, As Deposited and Annealed”; 401, 1996; pp. 531-536.Applicant
Nakagawara et al., Effects of Buffer Layers in Epitaxlal Growth of SrTiO3 Thin Film on Si(100), J. Appl. Phys., 78 (12), Dec. 15, 1995, pp. 7226-7230.Applicant
Suzuki et al., “A Proposal of Epitaxial Oxide Thin Film Structures For Future Oxide Electronics,” Materials Science and Engineering B41, (1996), pp. 166-173.Applicant
W. F. Egelhoff et al., “Optimizing GMR Spin Valves: The Outlook for Improved Properties”, 1998 Int'l Non Volatile Memory Technology Conference, pp. 34-37.Applicant
Wang et al., “Processing and Performance of Piezoelectric Films”, Univ. Of MD, Wilcoxon Research Col, and Motorola Labs, May 11, 2000.Applicant
M. Rotter et al., “Nonlinear Accustoelectric Interactions in GaAs/LiNbO3 Structures”, Applied Physics Letters, vol. 75(7), Aug. 16, 1999, pp. 965-967.Applicant
K. Sreenivas et al., “Surface Acoustic Wave Propagation on Lead Zirconate Titanate Thin Films,” Appl. Phys. Lett. 52 (9), Feb. 29, 1998, pp. 709-711.Applicant
M. Rotter et al., “Single Chip Fused Hybrids for Acousto-Electric and Acousto-Optic Applications,” 1997 Applied Physics Letters, vol. 70(16), Apr. 21, 1997, pp. 2097-2099.Applicant
A. Mansingh et al., “Surface Acoustic Wave Propagation in PZT/YBCO/SrTiO3 and PbTiO3/YBCO/SrTIO3 Epitaxial Heterostructures,” Ferroelectric, vol. 224, pp. 275-282, 1999.Applicant
S. Mathews et al., “Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures”, Science, vol. 276, Apr. 11, 1997, pp. 238-240.Applicant
R. Houdre et al., “Properties of GaAs on Si Grown by Molecular Beam Epitaxy,” Solid State and Materials Science, vol. 16, Issue 2, 1990, pp. 91-114.Applicant
S. F. Fang et al., “Gallium Arsenide and Other Compound Semiconductors on Silicon,” J. Appl. Phys., 68(7), Oct. 1, 1990, pp. R31-R58.Applicant
Carlin et al., Impact of GaAs Buffer Thickness on Electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Substrates, Appl. Phys. Letter, vol. 76, No. 14, Apr. 2000, pp. 1884-1886.Applicant
Ringel et al., “Epitaxial Integration of III-V Materials and Devices with Si Using Graded GeSi Buffers,” 27th International Symposium on Compound Semiconductors, Oct. 2000.Applicant
Zogg et al., “Progress In Compound-Semiconductor-on-Silicon-Heteroepitaxy with Fluoride Buffer Layers,” J. Electrochem Soc., vol. 136, No. 3, Mar. 1998. pp. 775-779.Applicant
Xiong et al., “Oxide Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates,” IEEE Photonics Technology Letters, vol. 12, No. 2, Feb. 2000, pp. 110-112.Applicant
Clem et al., “Investigation of PZT//LSCO//Pt//Aerogel Thin Film Composites for Uncooled Pyroelectric IR Detectors,” Mat. Res. Soc. Symp. Proc., vol. 541, pp. 661-666, 1999.Applicant
Gunapala et al., “Bound-To-Quasi-Bound Quantum-Well Infrared Photodetectors,” NASA Tech Brief, vol. 22, No. 9, Sep. 1998.Applicant
Abhay M. Joshi et al., “Monolithic InGaAs-on-silicon Wave Infrared Detector Arrays,” Intn. Society for Optical Engineering, vol. 2999, pp. 211-224.Applicant
Bruley et al., “Nanostructure and Chemistry of a (100)MgO/(100) GaAs Interface,” Appl. Phys. Lett, 65(5), Aug. 1994, pp. 564-566.Applicant
Fork et al., “Epitaxial MgO On Si(001) for Y-Ba-Cu-O Thin Film Growth by Pulsed Laser Deposition,” Appl. Phys Lett., 58(20), May 20, 1991, pp. 2294-2296.Applicant
Himpsel et al., “Dialectrics on Semiconductors,” Materials Science and Engineering, B1(1988), pp. 9-13.Applicant
Li et al., “Epitaxial La 0.67Sr0.33MnO3 Magnetic Tunnel Junctions,” J. Appl. Phys. 81(8), Apr. 15, 1997, pp. 5509-5511.Applicant
O'Donnell et al., “Colossal Magnetoresistance Magnetic Tunnel Junctions Grown by Molecular-Beam Epitaxy,” Appl. Physics Letters, vol. 76, No. 14, Apr. 3, 2000, pp. 1914-1916.Applicant
Mikami et al., “Formation of Si Epi/MgO-Al2O3Epi./SiO3/Si and Its Epitaxial Film Quality,” Fundamental Research Laboratories and Microelectronics Laboratories, pp. 31-34, 1983.Applicant
T. Asano et al., “An Epitaxial Si/Insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon,” Thin Solid Films, vol. 93 (1982), pp. 143-150.Applicant
T. Chikyow et al., “Reaction and Regrowth Control of CeO2on Si(111) Surface for the Silicon-On-Insulator Structure,” Appl. Phys. Lett., vol. 65, No. 8, Aug. 22, 1994, pp. 1030-1032.Applicant
J.F. Kang, et al., “Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering,” Solid State Communications, vol. 108, No. 4, pp. 225-227, 1998.Applicant
R.A. Morgan et al., “Vertical-Cavity Surface-Emitting Lasers Come of Age,” SPIE, vol. 2683, pp. 18-29.Applicant
“Technical Analysis of Qualcomm QCP-800 Portable Cellular Phone (Transmitter Circuitry),” Talus Corporation, Qualcomm QCP-800 Technical Analysis Report, Dec. 10, 1996, pp. 5-8.Applicant
Jo-Ey Wong, et al.; “An Electrostatically-Actuated Mems Switch for Power Applications”; IEEE, 2000; pp. 633-638.Applicant
T. Mizuno, et al.; “Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology”; IEEE Electron Device Letters, vol. 21, No. 5, May 2000; pp. 230-232.Applicant
F.M. Buffer, et al.; “Strain-dependence of electron transport in bulk Si and deep-submicron MOSFET's” Computatural Electronics, 2000, Book of Abstracts, IWCE Glasgow 2000, 7th Int'l Workshop on, 2000; pp. 64-65.Applicant
S.S. Lu, et al.; “Piezoelectric field effect transistor (PEFET) using In0.2Ga0.6As/Al0.35Ga0.65As/In0.2Ga0.6As/GaAs Strained layer structure on (111)B GaAs substrate”; Electronics Letters, 12TH Ma 1994, vol. 30, No. 10; pp. 823-825.Applicant
Kihong Kim, et al.“ On-Chip Wireless Interconnection with Integrated Antennas”; 2000 IEEE; pp. 20.2.1-20.3.4.Applicant
G. Passiopoulos, et al.; “V-Band Single Chip, Direct Carrier BPSK Modulation Transmitter With Integrated Patch Antenna”; 1998 IEEE MTT-S Digest; pp. 305-308.Applicant
Mau-Chung Frank Chang, et al.; “RF/Wireless Interconnect for Inter- and Intra-Chip Communications”; Proceedings of the IEEE, vol. 89, No. 4, Apr. 2001; pp. 456-466.Applicant
The Electronics Industry Report; Prismark; 2001; pp. 111-120.Applicant
J.K. Abrokwah, et al.; “A Manufacturable Complementary GaAs Process”; GaAs IC Symposium, IEEE, 1993; pp. 127-130.Applicant
H. Nagata, “A Preliminary Consideration of the Growth Behaviour of CeO2, SrTiO3 and SrVO3 Films on Si Substrate,” Thin Solid Films, 224, 1993, pp. 1-3.Applicant
Nagata et al., “Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum,” Jpn. Jour. Appl. Phys., vol. 30, No. 6B, Jun. 1991, pp. L1136-L1138.Applicant
Kado et al., “Heteroepitaxial Growth of SrO Films on Si Substrates,” J. Appl. Phys., 61(6), Mar. 15, 1987, pp. 2398-2400.Applicant
H. Ishiwara et al., “Epitaxial Growth of Perovskite Type Oxide Films on Substrates”; Materials Research Symposium Proceedings, vol. 220, pp. 595-600, Apr. 29-May 3, 1991.Applicant
J.K. Abrokwah, et al.; “A Manufacturable High-Speed Low-Power Complementary GaAs Process”; Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 592-594.Applicant
C.J. Palmstrom et al.; “Stable and Epitaxial Contacts to III-V Compound Semiconductors”; Contacts to Semiconductors Fundamentals and Technology; Noyles Publications, 1993; pp. 67-150.Applicant
Jayshri Sabarinathat, et al.; “Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth”; Applied Physics Letters, vol. 78, No. 20, May 14, 2001; pp. 3024-3026.Applicant
Philip Ball; “The Next Generation of Optical Fibers”; Technology Review, May 2001; pp. 55-61.Applicant
John D. Joannopoulos, et al.; “Molding the Flow of Light”; Photonic Crystals; Princeton University Press, 1995.Applicant
Thomas F. Krauss, et al.; “Photonic crystals in the optical regime—past, present and future”; Progress in Quantum Electronics 23 (1999) 51-96.Applicant
G. H. Jin, et al.; “PLZT Film Waveguide Mach-Zehnder Electrooptic Modulator”; Journal of Lightwave Technology, vol. 18, No. 6. Jun. 2000; pp. 807-812.Applicant
D.E. Aspnes, et al.; “Steps on (001) silicon surfaces”; J. Vac. Sci. Technol. B, vol. 5, No. 4, Jul./Aug. 1987; pp. 939-944.Applicant
D.M. Newns, et al.; “Mott transition field effect transistor”; Applied Physics Letters, vol. 73, No. 6, Aug. 10, 1998; pp. 780-782.Applicant
Lucent Technologies, Inc. “Arrayed Waveguide Grating Multiplexer/Demultiplexer”; Jan. 2000; 4 pages.Applicant
Hisashi Shichijo, et al.; “Co-Integration of GaAs MESFET and Si CMOS Circuits”; IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988; pp. 444-446.Applicant
H. Shichijo, et al.; “GaAs MESFET and Si CMOS Cointegration and Circuit Techniques”; 1988 IEEE; GaAs IC Symposium—239-242.Applicant
H. Shichijo, et al.; “Monolithic Process for Co-Integration of GaAs and Silicon Circuits”; 1988 IEEE; pp. 778-781.Applicant
Z.H. Zhu, et al. “Growth of InGaAs multi-quantum wells at 1.3 m wavelength on GaAs compliant substrates”; Applied Physics Letters, vol. 72, No. 20, May 18, 1998; pp. 2598-2600.Applicant
Kurt Eisenbeiser, et al.; “Metamorphic InAlAs/InGaAs Enhancement Mode HEMT's on GaAs Substrates”; IEEE Electron Device Letters, vol. 20, No. 10, Oct. 1999; pp. 507-509.Applicant
Tomonori Nagashima, et al.; “Three-Terminal Tandem Solar Cells With a Back-Contact Type Bottom Cell” Higashifuji Technical Center, Toyota Motor Corporation; 4 pages.Applicant
James Schellenberg, et al.; “Low-Loss, Planar Monolithic Baluns for K/Ka-Band Applications”; 1999 IEEE MTT-S Digest; pp. 1733-1736.Applicant
Arnold Leitner et al; “Pulsed Laser Deposition of Superconducting Strontium Titanate Thin-Films”; ; Session K11-Thin Films and Borocarbides; Mixed Session, Wednesday Afternoon; Mar. 19, 1997; Room 1202 B, Conv. Center (Abstract).Applicant
R.D. Vispute; “High quality optoelectronic grade epitaxial AIN films on -Al2O3, Si and 6H-SiC by pulsed laser deposition”; Thin Solid Films 299 (1997), pp. 94-103.Applicant
T. Warren Weeks, et al.; “GaN thin films deposited via organometallic vapor phase epitaxy on (6H)-SiC(0001) using high-temperature monocrystalline AIN buffer layers” 320 Applied Physics Letters, vol. 67, No. 3, Jul. 17, 1995, ppl401-403.Applicant
Z. Yu, et al.; “Epitaxial oxide thin films on SI(001)*”; J. Vac. Sci. Technol. B. vol. 18, No. 4, Jul./Aug. 2000; pp. 2139-2145.Applicant
Gentex Corporate Website; Photoelectric Smoke Detectors—How They Work; 2001.Applicant
Jeffrey B. Casady, et al.; “A Hybrid 6H-SiC Temperature Sensor Operational from 25 C to 500 C”; IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part A, vol. 19, No. 3, Sep. 1996; pp. 416-422.Applicant
Ronald W. Waynant, et al.; “Optoelectronic Integrated Circuits”; Electro-Optics Handbook, McGraw-Hill, Inc., 1994; Chapter Twenty Seven.Applicant
Antonio Mecozzi, et al.; “The Roles of Semiconductor Optical Amplifiers in Optical Networks”; Optics & Photonics News; Mar. 2001; pp. 37-42.Applicant
D.A. Francis, et al.; “A single-chip linear optical amplifier”; OFC, 2001; Mar. 17-22, 2001.Applicant
G. Vogg et al.; “Epitaxial alloy films of zinti-phase Ca(Si1-xGex)2”; Journal of Crystal Growth 223 (2001); pp. 573-576.Applicant
Peter S. Guilfoyle, et al.; “Optoelectronic Architecture for High-Speed Switching and Processing Applications”; 1998 The Photonics Design and Applications Handbook; pp. H-399-H-406.Applicant
Gerald B. Stringfellow; “Organometallic Vapor-Phase Epitaxy: Theory and Practice”; Departments of Materials Science and Engineering and Electrical Engineering, University of Utah; Academic Press, 1989.Applicant
M.A. Herman, et al.; “Molecular Beam Epitaxy Fundamentals and Current Status”; Springer-Verlag Berlin Heidelberg, 1989, 1996.Applicant
“Integration of GaAs on Si Using a Spinel Buffer Layer”, IBM Technical Bulletin, vol. 30, No. 6, Nov. 1987, p. 365.Applicant
“GaInAs Superconducting FET,”IBM Technical Bulletin, vol. 36, No. 8, Aug. 1993, p. 655-656.Applicant
“Epitaxial 3d Structure Using Mixed Spinels,” IBM Technical Bulletin, vol. 30, No. 3, Aug. 1987, p. 1271.Applicant
Moon et al., “Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates,” Japan J of Appl. Phys., vol. 33, Mar. 1994, pp. 1472-1477.Applicant
Yodo et al., GaAs Heteroepitaxial Growth on Si Substrates with Thin Si Interlayers in situ Annealed at High Temperatures, 8257b Journal of Vacuum Science & Technology, May/Jun. 1995, vol. 13, No. 3, pp. 1000-1005.Applicant
Cuomo et al., “Substrate Effect on the Superconductivity of YBa2Cu3O7 Thin Films,” AIP Conference 1988, pp. 141-148.Applicant
McKee et al., “Crystalline Oxides on Silicon: The First Five Monolayers,” Physical Review Letters, vol. 81, No. 14, Oct. 1998, pp. 3014-3017.Applicant
McKee et al., “Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide, and Barium Titanate on Silicon,” 1991 American Institute of Physics, pp. 782-784, Aug. 13, 1991.Applicant
Tambo et al., Molecular Beam Epitaxy Growth of SrTiO3 Films on Si(100)-2x1 with SrO Buffer Layer, Jpn. J. Appl. Phys., vol. 37, 1998, pp. 4454-4459.Applicant
McKee et al., “The MBE Growth and Optical Quality of BaTiO3 and SrTiO3 Thin Films on MgO,” Mat. Res. Soc. Symp. Proc., vol. 341, Apr. 1994, pp. 309-314.Applicant
McKee et al., “BaSi2 and Thin Film Alkaline Earth Silicides on Silicon,” Appl. Phys. Lett., 63 (20), Nov. 1993, pp. 2818-2820.Applicant
McKee et al., “Surface Structures and the Orthorhombic Transformation of Thin Film BaSi2 on Silicon,” Mat. Res. Soc. Symp. Proc., vol. 221, pp. 131-136.Applicant
Brian A. Floyd, et al.; “The projected Power Consumption of a Wireless Clock Distribution System and Comparison to Conventional Distribution Systems”; IEEE, 1999; pp. IITC99-249-IITC99-250.Applicant
Mori et al., “Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method,” Jpn. J. of Apl. Phys., vol. 30, No. 8A, Aug. 1991, pp. L1415-L1417.Applicant
Moon et al., “Growth of Crystalline SrTiO3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties,” Jpn. J. of Appl. Phys., vol. 33, (1994), pp. 5911-5916.Applicant
Farrow et al., “Heteroepitaxy of Dissimilar Materials,” Mat. Res. Soc. Symposium Proceedings, vol. 221, pp. 29-34, Apr. 29-May 2, 1991.Applicant
Ishiwara et al., “Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices,” Mat. Res. Soc., Symposium Proceedings, vol. 116, pp. 369-374, Apr. 5-8, 1988.Applicant
Douglas B. Chrisey, et al; Pulsed Laser Deposition of Thin Films; pp. 273-285.Applicant
B.A. Block, et al; “Photoluminescence properties of Er3-doped BaTiO3 thin films”; Appl. Phys. Lett. 65 (1), Jul. 4, 1994, pp. 25-27.Applicant
Kevin J. Chen et al; “A Novel Ultrafast Functional Device: Resonant Tunneling High Electron Mobility Transistor”; Electron Devices Meetingk 1996; IEEE Hong Kong; Jun. 29, 1996; pp. 60-63, XP010210167.Applicant
Wenhua Zhu et al.; “Molecular Beam Epitaxy of GaAs on Si-on-Insulator”; 320 Applied Physics Letters 59(1991) Jul. 8 No. 2; pp. 210-212.Applicant
Umesh K. Mishra et al; “Oxide Based Compound Semiconductor Electronics”; Electron Devices Meeting; 1997; Technical Digest, International; Washington, D.C.; Dec. 7-10, 1997; pp. 545-548.Applicant
J.M. Daughton et al.; “Application of Spin Dependent Transport Materials”; J. Phys. D. Appl. Phys. 32(1999) R169-R177.Applicant
Wei Zhang et al.; “Stress Effect and Enhanced Magnetoresistance in La0.67Ca0.33MnO3-8 Films”; Physical Review, B. Condensed Matter; American Institute of Physics; vol. 58, No. 21, Part 1; Dec. 1, 1998; pp. 14143-14146.Applicant
Q.-Y. Tong et al.; “IOS-a new type of materials combination for system-on-a chip preparation”; 1999 IEEE International SOI Conference, Oct. 1999; pp. 104-105.Applicant
T. Kanniainen et al.; “Growth of Dielectric 1hfo2/Ta205 Thin Film Nanolaminate Capacitors By Atomic Layer Epitaxy”; Electrochemical Society Proceedings, U.S. Electrochemical Society; Pennington, N.J.; Aug. 31, 1997; pp. 36-46.Applicant
Myung Bok Lee; “Heteroepitaxial Growth of BaTio3 Films on Si by Pulsed Laser Deposition”; Applied Physics Letters; Mar. 13, 1995; pp. 1331-1333.Applicant
Myung Bok Lee; “Formation and Characterization of Epitaxial TiO2 and BaTiO3/TiO2 Films on Si Substrate”; Japan Journal Applied Physics Letters; vol. 34; 1995; pp. 808-811.Applicant
Gilbert Lecarpentier et al.; “High Accuracy Machine Automated Assembly for Opto Electronics”; 2000 Electronic Components and Technology Conference; pp. 1-4.Applicant
R. Ramesh; “Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O Heterostructures on Silicon via Template Growth”; 320 Applied Physics Letters; 63(1993); Dec. 27; No. 26; pp. 3592-3594.Applicant
K. Eisenbeiser; “Field Effect Transistors with SrTiO3 Gate Dielectric on Si”; Applied Physics Letters; vol. 76, No. 10; Mar. 6, 2000; pp. 1324-1326.Applicant
Stephen A. Mass; “Microwave Mixers”; Second Edition; 2pp.Applicant
Douglas J. Hamilton et al.; “Basic Integrated Circuit Engineering”; pp. 2; 1975.Applicant
Takeshi Obata; “Tunneling Magnetoresistance at Up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 Junctions with 1.6-nm-Thick Barriers”; Applied Physics Letters; vol. 74, No. 2; Jan. 11, 1999; pp. 290-292.Applicant
Wei Zhang et al; “Enhanced Magnetoresistance in La-Ca-Mn-O Films on Si Substrates Using YbaCuO/CeO2 Heterostructures”; Physica C; vol. 282-287, No. 2003; Aug. 1, 1997; pp. 1231-1232.Applicant
Shogo Imada et al; “Epitaxial Growth of Ferroelectric YmnO3 Thin Films on Si(111) Substrates by Molecular Beam Epitaxy”; Jpn. J. Appl. Phys. vol. 37 (1998); pp. 6497-6501; Part 1, No. 12A, Dec. 1998.Applicant
Ladislav Pust et al.; “Temperature Dependence of the Magnetization Reversal in Co(fcc)-BN-Co(poly hcp) Structures”; Journal of Applied Physics; vol. 85, No. 8; Apr. 15, 1999; pp. 5765-5767.Applicant
C. Martinez; “Epitaxial Metallic Nanostructures on GaAs”; Surface Science; vol. 482-485; pp. 910-915; 2001.Applicant
Wen-Ching Shih et al.; “Theoretical Investigation of the SAW Properties of Ferroelectric Film Composite Structures”; IEEE Transactions of Ultrasonics, Ferroelectrics, and Frequency Control; vol. 45, No. 2; Mar. 1998; pp. 305-316.Applicant
Zhu Dazhong et al.; “Design of ZnO/SiO2/Si Monolithic Integrated Programmable SAW Filter”; Proceedings of Fifth International Conference on Solid-State and Integrated Circuit Technology; Oct. 21-23, 1998; pp. 826-829.Applicant
Kirk-Othmer Encyclopedia of Chemical Technology; Fourth Edition, vol. 12; Fuel Resources to Heat Stabilizers; A Wiley-Interscience Publication; John Wiley & Sons.Applicant
Joseph W. Goodman et al; “Optical Interconnections For VLSI Systems”; Proceedings of the IEEE, vol. 72, No. 7 Jul. 1984.Applicant
Fathimulla et al.; “Monolithic Integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si Substrate”; Fourth International Conference on Indium Phosphide and Related Materials, Newport, RI, USA; Apr. 21-24, 1992 ; pp. 167-170; XP000341253; IEEE, New York, NY, USA; ISBN: 0-7803-0522-1.Applicant
H. Takahashi et al.; “Arrayed-Waveguide Grating For Wavelength Division Multi/Demultiplexer With Nanometre REsolution”; Electronics Letters; vol. 26., No. 2, Jan. 18th, 1990.Applicant
Pierret, R.F.; “1/J-FET and MESFET”; Field Effect Devices; MA, Addison-Wesley; 1990; pp. 9-22.Applicant
M. Schrelter, et al.; “Sputtering of Self-Polarized PZT Films for IR-Detector Arrays”; 1998 IEEE; pp. 181-185.Applicant
Hideaki Adachi et al.; “Sputtering Preparation of Ferroelectric PLZT Thin Films and Their Optical Applications”; IEEE Transactions of Ultrasonics, Ferroelectrics and Frequency Control, vol. 38, No. 6, Nov. 1991.Applicant
A.J. Moulson et al.; “Electroceramics Materials Properties Applications”; Chapman & Hall; pp. 366-369.Applicant
P.A. Langjahr et al.; “Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Pervoskite Substrates”; Mat. Res. Soc. Symp. Proc., vol. 401; 1995 Materials Research Society; pp. 109-114.Applicant
Wang et al.; “Depletion-Mode GaAs MOSFETs with Negligible Drain Current Drift and Hysteresis”; Electron Devices Meeting, 1998, IEDM '98 Technical Digest; pp. 67-70.Applicant
Ben G. Streetman; “Solid State Electronic Devices”; 1990, Prentice Hall; Third Edition; pp. 320-322.Applicant
A.Y Wu et al.; “Highly Oriented (Pb,La)(Zr,Ti)O3 Thin Films on Amorphous Substrates”; IEEE, 1992; pp. 301-304.Applicant
Timothy E. Glassman et al.; “Evidence for Cooperative Oxidation of MoCVD Precursors Used in BaxSr1-xTiO3 Film Growth”; Mat. Res. Soc. Symp. Proc. vol. 446, 1997 Materials Research Society; pp. 321-326.Applicant
S.N. Subbarao et al.; “Monolithic PIN Photodetector and FET Amplifier on GaAs-os-Si”; IEEE; GaAs IC Symposium-163-166; 1989.Applicant
T.A. Langdo et al.; “High Quality Ge on Si by Epitaxial Necking”; Applied Physics Letters; vol. 76, No. 25; pp. 3700-3702; Jun. 19, 2000.Applicant
Chenning Hu et al.; Solar Cells From Basics to Advanced Systems; McGraw-Hill Book Company; 1983.Applicant
O.J. Painter et al; “Room Temperature Photonic Crystal Defect Lasers at Near-Infrared Wavelengths in InGaAsp”; Journal of Lightwave Technology, vol. 17, No. 11; Nov. 1999.Applicant
C. Donn et al.; “A 16-Element, K-Band Monolithic Active Receive Phased Array Antenna”; Antennas and Propagation Society International Symposium, 1988; pp. 188-191, vol. 1; Jun. 6-10, 1988.Applicant
Don W. Shaw; “Epitaxial GaAs on Si: Progress and Potential Applications”; Mat. Res. Soc. Symp. Proc.; pp. 15-30; 1987.Applicant
G.J.M. Dormans, et al.; “PbTiO/3/Thin Films Grown by Organometallic Chemical Vapour Deposition”; Third International Symposium on Integrated Ferroelectrics; Apr. 3-5, 1991 (Abstract).Applicant
P.J. Borrelli et al.; “Compositional and Structural Properties of Sputtered PLZT Thin Films”; Ferroelectric Thin Films II Symposium; Dec. 2-4, 1991 (Abstract).Applicant
Ranu Nayak et al; “Enhanced acousto-optic diffraction efficiency in a symmetric SrRiO3/BaTiO3/SrTiO3 thin-film heterostructure”; Nov. 1, 2000; vol. 39, No. 31; Applied Optics; pp. 5847-5853.Applicant
Ranu Nayak et al; “Studies on acousto-optical interaction in SrTiO3/BaTiO3/SrTiO3 epitaxial thin film heterostructures”; J. Phys. D: Appl. Phys. 32 (1999) 380-387.Applicant
S.K. Tewksbury et al.; “CoIntegration of Optoelectronics and Submicron CMOS”; Wafer Scale Integration; 1993; Proceedings, Fifth Annual IEEE; Jan. 20, 1993; pp. 358-367.Applicant
V. Kaushik et al.; “Device Characteristics of Crystalline Epitaxial Oxides on Silicon”; Device Research Conference, 2000; Conference Digest 58th DRC; pp. 17-20; Jun. 19-21, 2000.Applicant
Katherine Derbyshire; “Prospects Bright for Optoelectronics Volume, Cost Drive Manufacturing for Optical Applications”; Semiconductor Magazine; vol. 3, No. 3; Mar. 2002.Applicant
Alex Chediak et al; “Integration of GaAs/Si with Buffer Layers and Its Impact on Device Integration”; TICS 4, Prof. Sands. MSE 225, Apr. 12, 2002; pp. 1-5.Applicant
S.A. Chambers et al; “Band Discontinuities at Epitaxial SrTiO3/Si(001) Heterojunctions”; Applied Physics Letters; vol. 77, No. 11; Sep. 11, 2000; pp. 1662-1664.Applicant
H. Wang et al.; “GaAs/GaAlAs Power HBTs for Mobile Communications”; Microwave Symposium Digest; 1993 IEEE; vol. 2.; pp. 549-552.Applicant
Y. Ota et al.; “Application of Heterojunction FET to Power Amplifier for Cellular Telephone”; Electronics Letters; May 26th, 1994; vol. 30, No. 11; pp. 906-907.Applicant
Keiichi Sakuno et al; “A 3.5W HBT MMIC Power Amplifier Module for Mobile Communications”; IEEE 1994; Microwave and Millimeter-Wave Monolithic Circuits Symposium; pp. 63-66.Applicant
Mitsubishi Semiconductors Press Release (GaAs FET's) Nov. 8, 1999 pp. 1-2.Applicant
R.J. Matyl et al; “Selected Area Heteroepitaxial Growth of GaAs on Silicon for Advanced Device Structures”; 2194 Thin Solid Films; 181 (1989) Dec. 10; No. 1; pp. 213-225.Applicant
K. Nashimoto et al; “Patterning of Nb, LaOnZr, TiO3 Waveguides for Fabricating Micro-Optics Using Wet Etching and Solid-Phase Epitaxy”; Applied Physics Letters; vol. 75, No. 8; Aug. 23, 1999; pp. 1054-1056.Applicant
Bang-Hung Tsao et al; “Sputtered Barium Titanate and Barium Strontium Titanate Films for Capacitor Applications”; Applications of Ferroelectrics, 2000; Proceedings of the 2000 12th International Symposium on vol. 2; pp. 837-840.Applicant
Man Fai Ng et al; “Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates”; Journal of Materials Research; vol. 12, No. 5; pp. 1306.Applicant
Yuji Matsumoto et al.; “Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide”; Science; Feb. 2, 2001; vol. 291; pp. 854-856.Applicant
S.A. Chambers et al.; “Epitaxial Growth and Properties of Ferromagnetic Co-Doped TiO2 Anatase”; Applied Physics Letters; vol. 79, No. 21; Nov. 19, 2001; pp. 3467-3469.Applicant
J.R. Busch et al.; “Linear Electro-Optic Response in Sol-Gel PZT Planair Waveguides”; Electronics Letters; Aug. 13th, 1992; vol. 28, No. 17; pp. 1591-1592.Applicant
Yi W. et al; “Mechanism of cleaning Si (100) surface using Sr and SrO for the growth of crystalline SrTiO/sub 2/films” Journal of Vacuum Science & Technology, vol. 20, No. 4, Jul. 2002 pp. 1402-1405.Applicant
Xiaming Hu et al; “Sr/Si template formation for the epitaxial growth of SrTiO/sub 3/on silicon” Materials Research Society Proceedings, vol. 716, 2002, pp. 261-266.Applicant

Abstract