US 6,462,360 B1Grant
Integrated gallium arsenide communications systems
Issue Date:2002-10-08
•40 Claims
•15 Drawing Sheets
Abstract
Composite semiconductor structures and methods are provided for communications systems, specifically, those utilizing RF signals. Antenna switches, and amplifiers in receiver and transmitter sections of the communications systems are shown that are fabricated within a compound semiconductor layer of a composite semiconductor structure is integrated with support circuitry in a non-compound semiconductor substrate. Support circuitry that may be integrated include negative voltage generation circuitry, drain current protection circuitry, and voltage regulation circuitry.
Metadata
Assignee
- Motorola, Inc.
Inventors
- Robert J. Higgins, Jr.
- Robert E. Stengel
Application Information
Application Number:US 09/921,901
Filing Date:2001-08-06
Priority Date:2001-08-06
Art Unit:7
Classifications
IPC:
H01L 2128H01L 2100
Field of Search:
257189257197257198257295438 3438240438285
Patent Drawings (15 sheets)
Description
Field of the Invention
[0002] This invention generally relates to semiconductor structures, and more particularly to semiconductor structures in wireless communication systems that use radio frequency (RF) signals.
Background of the Invention
[0003] Wireless communication systems, such as cellular telephones, that use RF signals, are often made as physically compact as possible. Correspondingly, semiconductor structures in wireless communication systems are often investigated for possible miniaturization.
[0004] A possible method for miniaturization is to incorporate as many semiconductor structures as possible into one integrated circuit. In this way, the number of external connections decreases and the area of the semiconductor structures also decreases. In order to incorporate the semiconductor structures onto one die, a composite semiconductor structure may be required.
[0005] For RF signals in the microwave spectrum (i.e. 2.1 GHz to 2.7 Ghz) which are widely used in wireless communication systems, compound semiconductor technology, for example, gallium arsenide (GaAs) technology, may be favored. Factors to be considered in selecting compound semiconductor technology may include switching speeds, parasitic capacitances, and ON resistance. For other functions in wireless communication systems, non-compound semiconductor technology such as silicon-based transistors may be favored.
[0006] However, manufacturing an integrated circuit from a composite semiconductor structure incorporating both GaAs and silicon technology, has been difficult. For example, it has been difficult to overlay a high quality compound semiconductor (GaAs) layer over a high quality monocrystalline silicon substrate.
[0007] What is needed is to reduce the difficulty of providing wireless communications components in a smaller number of integrated circuits by integrating the components into composite semiconductor structures.
Brief Description of the Drawings
[0008] FIGS. 1, 2, 3, 24, 25 illustrate schematically, in cross-section, device structures that can be used in accordance with various embodiments of the invention.
[0009] FIG. 4 illustrates graphically the relationship between maximum attainable film thickness and lattice mismatch between a host crystal and a grown crystalline overlayer.
[0010] FIG. 5 is a high resolution Transmission Electron Micrograph (TEM) of illustrative semiconductor material manufactured in accordance with what is shown herein.
[0011] FIG. 6 is an x-ray diffraction taken on an illustrative semiconductor structure manufactured in accordance with what is shown herein.
[0012] FIG. 7 illustrates a high resolution Transmission Electron Micrograph of a structure including an amorphous oxide layer.
[0013] FIG. 8 illustrates an x-ray diffraction spectrum of a structure including an amorphous oxide layer.
[0014] FIGS. 9-12 illustrate schematically, in cross-section, the formation of a device structure in accordance with another embodiment of the invention.
[0015] FIGS. 13-16 illustrate a probable molecular bonding structure of the device structures illustrated in FIGS. 9-12.
[0016] FIGS. 17-20 illustrate schematically, in cross-section, the formation of a device structure in accordance with still another embodiment of the invention.
[0017] FIGS. 21-23 illustrate schematically, in cross-section, the formation of a yet another embodiment of a device structure in accordance with the invention.
[0018] FIGS. 26-30 include illustrations of cross-sectional views of a portion of an integrated circuit that includes a compound semiconductor portion, a bipolar portion, and a MOS portion in accordance with what is shown herein.
[0019] FIGS. 31-37 include illustrations of cross-sectional views of a portion of another integrated circuit that includes a semiconductor laser and a MOS transistor in accordance with what is shown herein.
[0020] FIG. 38 is an electrical block diagram of a typical wireless communication system constructed in accordance with the present invention.
[0021] FIG. 39 is an electrical block diagram of an illustrative GaAs RF Switch circuit that can be constructed in accordance with the present invention.
[0022] FIG. 40 is an electrical schematic of a typical GaAs FET support circuit that can be constructed in accordance with the invention.
[0023] FIG. 41 is an electrical schematic of a typical self-biasing GaAs FET circuit that can be constructed in accordance with the invention.
[0024] FIG. 42 is an electrical block diagram of an illustrative GaAs low noise amplifier circuit that can be constructed in accordance with the present invention.
[0025] FIG. 43 is an electrical block diagram of an illustrative GaAs RF power amplifier circuit that can be constructed in accordance with the present invention.
[0026] FIG. 44 is an electrical schematic diagram of an illustrative DC-DC converter that can be constructed in accordance with the present invention.
[0027] Skilled artisans will appreciate that in many cases elements in certain FIGS. are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in certain FIGS. may be exaggerated relative to other elements to help to improve understanding of what is being shown.
Detailed Description of the Drawings
[0028] The present invention involves semiconductor structures of particular types. For convenience herein, these semiconductor structures are sometimes referred to as “composite semiconductor structures” or “composite integrated circuits” because they include two (or more) significantly different types of semiconductor devices in one integrated structure or circuit. For example, one of these two types of devices may be silicon-based devices such as CMOS devices, and the other of these two types of devices may be compound semiconductor devices such GaAs devices.
[0029] FIG. 1 illustrates schematically, in cross-section, a portion of a semiconductor structure 20 which may be relevant to or useful in connection with certain embodiments of the present invention. Semiconductor structure 20 includes a monocrystalline substrate 22, accommodating buffer layer 24 comprising a monocrystalline material, and a layer 26 of a monocrystalline compound semiconductor material. In this context, the term “monocrystalline” shall have the meaning commonly used within the semiconductor industry. The term shall refer to materials that are a single crystal or that are substantially a single crystal and shall include those materials having a relatively small number of defects such as dislocations and the like as are commonly found in substrates of silicon or germanium or mixtures of silicon and germanium and epitaxial layers of such materials commonly found in the semiconductor industry.
[0030] In accordance with one embodiment, structure 20 also includes an amorphous intermediate layer 28 positioned between substrate 22 and accommodating buffer layer 24. Structure 20 may also include a template layer 30 between accommodating buffer layer 24 and compound semiconductor layer 26. As will be explained more fully below, template layer 30 helps to initiate the growth of compound semiconductor layer 26 on accommodating buffer layer 24. Amorphous intermediate layer 28 helps to relieve the strain in accommodating buffer layer 24 and by doing so, aids in the growth of a high crystalline quality accommodating buffer layer 24.
[0031] Substrate 22, in accordance with one embodiment, is a monocrystalline semiconductor wafer, preferably of large diameter. The wafer can be of a material from Group IV of the periodic table. Examples of Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like. Preferably substrate 22 is a wafer containing silicon or germanium, and most preferably is a high quality monocrystalline silicon wafer as used in the semiconductor industry. Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material epitaxially grown on the underlying substrate 22. In accordance with one embodiment, amorphous intermediate layer 28 is grown on substrate 22 at the interface between substrate 22 and the growing accommodating buffer layer 24 by the oxidation of substrate 22 during the growth of layer 24. Amorphous intermediate layer 28 serves to relieve strain that might otherwise occur in monocrystalline accommodating buffer layer 24 as a result of differences in the lattice constants of substrate 22 and buffer layer 24. As used herein, lattice constant refers to the distance between atoms of a cell measured in the plane of the surface. If such strain is not relieved by amorphous intermediate layer 28, the strain may cause defects in the crystalline structure of accommodating buffer layer 24. Defects in the crystalline structure of accommodating buffer layer 24, in turn, would make it difficult to achieve a high quality crystalline structure in monocrystalline compound semiconductor layer 26.
[0032] Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material selected for its crystalline compatibility with underlying substrate 22 and with overlying compound semiconductor material 26. For example, the material could be an oxide or nitride having a lattice structure matched to substrate 22 and to the subsequently applied semiconductor material 26. Materials that are suitable for accommodating buffer layer 24 include metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide. Additionally, various nitrides such as gallium nitride, aluminum nitride, and boron nitride may also be used for accommodating buffer layer 24. Most of these materials are insulators, although strontium ruthenate, for example, is a conductor. Generally, these materials are metal oxides or metal nitrides, and more particularly, these metal oxide or nitrides typically include at least two different metallic elements. In some specific applications, the metal oxides or nitride may include three or more different metallic elements.
[0033] Amorphous interface layer 28 is preferably an oxide formed by the oxidation of the surface of substrate 22, and more preferably is composed of a silicon oxide. The thickness of layer 28 is sufficient to relieve strain attributed to mismatches between the lattice constants of substrate 22 and accommodating buffer layer 24. Typically, layer 28 has a thickness in the range of approximately 0.5-5 nm.
[0034] The compound semiconductor material of layer 26 can be selected, as needed for a particular semiconductor structure, from any of the Group IIIA and VA elements (III-V semiconductor compounds), mixed III-V compounds, Group II(A or B) and VIA elements (II-VI semiconductor compounds), and mixed II-VI compounds. Examples include gallium arsenide (GaAs), gallium indium arsenide (GaInAs), gallium aluminum arsenide (GaAlAs), indium phosphide (InP), cadmium sulfide (CdS), cadmium mercury telluride (CdHgTe), zinc selenide (ZnSe), zinc sulfur selenide (ZnSSe), and the like. Suitable template 30 materials chemically bond to the surface of the accommodating buffer layer 24 at selected sites and provide sites for the nucleation of the epitaxial growth of the subsequent compound semiconductor layer 26. Appropriate materials for template 30 are discussed below.
[0035] FIG. 2 illustrates, in cross-section, a portion of a semiconductor structure 40 in accordance with a further embodiment. Structure 40 is similar to the previously described semiconductor structure 20 except that an additional buffer layer 32 is positioned between accommodating buffer layer 24 and layer of monocrystalline compound semiconductor material 26. Specifically, additional buffer layer 32 is positioned between the template layer 30 and the overlying layer 26 of compound semiconductor material. Additional buffer layer 32, formed of a semiconductor or compound semiconductor material, serves to provide a lattice compensation when the lattice constant of accommodating buffer layer 24 cannot be adequately matched to the overlying monocrystalline compound semiconductor material layer 26.
[0036] FIG. 3 schematically illustrates, in cross-section, a portion of a semiconductor structure 34 in accordance with another exemplary embodiment of the invention. Structure 34 is similar to structure 20, except that structure 34 includes an amorphous layer 36, rather than accommodating buffer layer 24 and amorphous interface layer 28, and an additional semiconductor layer 38.
[0037] As explained in greater detail below, amorphous layer 36 may be formed by first forming an accommodating buffer layer and an amorphous interface layer in a similar manner to that described above. Monocrystalline semiconductor layer 26 is then formed (by epitaxial growth) overlying the monocrystalline accommodating buffer layer. The accommodating buffer layer is then exposed to an anneal process to convert the monocrystalline accommodating buffer layer to an amorphous layer. Amorphous layer 36 formed in this manner comprises materials from both the accommodating buffer and interface layers, which amorphous layers may or may not amalgamate. Thus, layer 36 may comprise one or two amorphous layers. Formation of amorphous layer 36 between substrate 22 and semiconductor layer 38 (subsequent to layer 38 formation) relieves stresses between layers 22 and 38 and provides a true compliant substrate for subsequent processing—e.g., compound semiconductor layer 26 formation.
[0038] The processes previously described above in connection with FIGS. 1 and 2 are adequate for growing monocrystalline compound semiconductor layers over a monocrystalline substrate. However, the process described in connection with FIG. 3, which includes transforming a monocrystalline accommodating buffer layer to an amorphous oxide layer, may be better for growing monocrystalline compound semiconductor layers because it allows any strain in layer 26 to relax.
[0039] Semiconductor layer 38 may include any of the materials described throughout this application in connection with either of compound semiconductor material layer 26 or additional buffer layer 32. For example, layer 38 may include monocrystalline Group IV or monocrystalline compound semiconductor materials.
[0040] In accordance with one embodiment of the present invention, semiconductor layer 38 serves as an anneal cap during layer 36 formation and as a template for subsequent semiconductor layer 26 formation. Accordingly, layer 38 is preferably thick enough to provide a suitable template for layer 26 growth (at least one monolayer) and thin enough to allow layer 38 to form as a substantially defect free monocrystalline semiconductor compound.
[0041] In accordance with another embodiment of the invention, semiconductor layer 38 comprises compound semiconductor material (e.g., a material discussed above in connection with compound semiconductor layer 26) that is thick enough to form devices within layer 38. In this case, a semiconductor structure in accordance with the present invention does not include compound semiconductor layer 26. In other words, the semiconductor structure in accordance with this embodiment only includes one compound semiconductor layer disposed above amorphous oxide layer 36.
[0042] The layer formed on substrate 22, whether it includes only accommodating buffer layer 24, accommodating buffer layer 24 with amorphous intermediate or interface layer 28, an amorphous layer such as layer 36 formed by annealing layers 24 and 28 as described above in connection with FIG. 3, or template layer 30, may be referred to generically as an “accommodating layer.”
[0043] The following non-limiting, illustrative examples illustrate various combinations of materials useful in structures 20, 40 and 34 in accordance with various alternative embodiments. These examples are merely illustrative, and it is not intended that the invention be limited to these illustrative examples.
Example 1
[0044] In accordance with one embodiment, monocrystalline substrate 22 is a silicon substrate oriented in the (100) direction. Silicon substrate 22 can be, for example, a silicon substrate as is commonly used in making complementary metal oxide semiconductor (CMOS) integrated circuits having a diameter of about 200-300 mm. In accordance with this embodiment, accommodating buffer layer 24 is a monocrystalline layer of SrzBa1−zTiO3where z ranges from 0 to 1 and amorphous intermediate layer 28 is a layer of silicon oxide (SiOx) formed at the interface between silicon substrate 22 and accommodating buffer layer 24. The value of z is selected to obtain one or more lattice constants closely matched to corresponding lattice constants of the subsequently formed layer 26. Accommodating buffer layer 24 can have a thickness of about 2 to about 100 nanometers (nm) and preferably has a thickness of about 5 nm. In general, it is desired to have an accommodating buffer layer 24 thick enough to isolate the monocrystalline material layer 26 from substrate 22 to obtain the desired electrical and optical properties. Layers thicker than 100 nm usually provide little additional benefit while increasing cost unnecessarily; however, thicker layers may be fabricated if needed. The amorphous intermediate layer 28 of silicon oxide can have a thickness of about 0.5-5 nm, and preferably a thickness of about 1-2 nm.
[0045] In accordance with this embodiment, compound semiconductor material layer 26 is a layer of gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) having a thickness of about 1 nm to about 100 micrometers (μm) and preferably a thickness of about 0.5 μm to 10 μm. The thickness generally depends on the application for which the layer is being prepared. To facilitate the epitaxial growth of the gallium arsenide or aluminum gallium arsenide on the monocrystalline oxide, a template layer 30 is formed by capping the oxide layer. Template layer 30 is preferably 1-10 monolayers of Ti—As, Sr—O—As, Sr—Ga—O, or Sr—Al—O. By way of a preferred example, 1-2 monolayers 30 of Ti—As or Sr—Ga—O have been shown to successfully grow GaAs layers 26.
Example 2
[0046] In accordance with a further embodiment, monocrystalline substrate 22 is a silicon substrate as described above. Accommodating buffer layer 24 is a monocrystalline oxide of strontium or barium zirconate or hafnate in a cubic or orthorhombic phase with an amorphous intermediate layer 28 of silicon oxide formed at the interface between silicon substrate 22 and accommodating buffer layer 24. Accommodating buffer layer 24 can have a thickness of about 2-100 nm and preferably has a thickness of at least 5 nm to ensure adequate crystalline and surface quality and is formed of a monocrystalline SrZrO3, BaZrO3, SrHfO3, BaSnO3or BaHfO3. For example, a monocrystalline oxide layer of BaZrO3can grow at a temperature of about 700 degrees C. The lattice structure of the resulting crystalline oxide exhibits a 45 degree rotation with respect to the substrate 22 silicon lattice structure.
[0047] An accommodating buffer layer 24 formed of these zirconate or hafnate materials is suitable for the growth of compound semiconductor materials 26 in the indium phosphide (InP) system. The compound semiconductor material 26 can be, for example, indium phosphide (InP), indium gallium arsenide (InGaAs), aluminum indium arsenide, (AlInAs), or aluminum gallium indium arsenic phosphide (AlGaInAsP), having a thickness of about 1.0 nm to 10 μm. A suitable template 30 for this structure is 1-10 monolayers of zirconium-arsenic (Zr—As), zirconium-phosphorus (Zr—P), hafnium-arsenic (Hf—As), hafnium-phosphorus (Hf—P), strontium-oxygen-arsenic (Sr—O—As), strontium-oxygen-phosphorus (Sr—O—P), barium-oxygen-arsenic (Ba—O—As), indium-strontium-oxygen (In—Sr—O), or barium-oxygen-phosphorus (Ba—O—P), and preferably 1-2 monolayers of one of these materials. By way of an example, for a barium zirconate accommodating buffer layer 24, the surface is terminated with 1-2 monolayers of zirconium followed by deposition of 1-2 monolayers of arsenic to form a Zr—As template 30. A monocrystalline layer 26 of the compound semiconductor material from the indium phosphide system is then grown on template layer 30. The resulting lattice structure of the compound semiconductor material 26 exhibits a 45 degree rotation with respect to the accommodating buffer layer 24 lattice structure and a lattice mismatch to (100) InP of less than 2.5%, and preferably less than about 1.0%.
Example 3
[0048] In accordance with a further embodiment, a structure is provided that is suitable for the growth of an epitaxial film of a II-VI material overlying a silicon substrate 22. The substrate 22 is preferably a silicon wafer as described above. A suitable accommodating buffer layer 24 material is SrxBa1−xTiO3where x ranges from 0 to 1, having a thickness of about 2-100 nm and preferably a thickness of about 5-15 nm. The II-VI compound semiconductor material 26 can be, for example, zinc selenide (ZnSe) or zinc sulfur selenide (ZnSSe). A suitable template 30 for this material system includes 1-10 monolayers of zinc-oxygen (Zn—O) followed by 1-2 monolayers of an excess of zinc followed by the selenidation of zinc on the surface. Alternatively, a template 30 can be, for example, 1-10 monolayers of strontium-sulfur (Sr—S) followed by the ZnSeS.
Example 4
[0049] This embodiment of the invention is an example of structure 40 illustrated in FIG. 2. Substrate 22, monocrystalline oxide layer 24, and monocrystalline compound semiconductor material layer 26 can be similar to those described in example 1. In addition, an additional buffer layer 32 serves to alleviate any strains that might result from a mismatch of the crystal lattice of the accommodating buffer layer and the lattice of the monocrystalline semiconductor material. The additional buffer layer 32 can be a layer of germanium or a GaAs, an aluminum gallium arsenide (AlGaAs), an indium gallium phosphide (InGaP), an aluminum gallium phosphide (AlGaP), an indium gallium arsenide (InGaAs), an aluminum indium phosphide (AlInP), a gallium arsenide phosphide (GaAsP), or an indium gallium phosphide (InGaP) strain compensated superlattice. In accordance with one aspect of this embodiment, buffer layer 32 includes a GaAsxP1−xsuperlattice, wherein the value of x ranges from 0 to 1. In accordance with another aspect, buffer layer 32 includes an InyGa1−yP superlattice, wherein the value of y ranges from 0 to 1. By varying the value of x or y, as the case may be, the lattice constant is varied from bottom to top across the superlattice to create a match between lattice constants of the underlying oxide and the overlying compound semiconductor material. The compositions of other materials, such as those listed above, may also be similarly varied to manipulate the lattice constant of layer 32 in a like manner. The superlattice can have a thickness of about 50-500 nm and preferably has a thickness of about 100-200 nm. The template for this structure can be the same of that described in example 1. Alternatively, buffer layer 32 can be a layer of monocrystalline germanium having a thickness of 1-50 nm and preferably having a thickness of about 2-20 nm. In using a germanium buffer layer, a template layer of either germanium-strontium (Ge—Sr) or germanium-titanium (Ge—Ti) having a thickness of about one monolayer can be used as a nucleating site for the subsequent growth of the monocrystalline compound semiconductor material layer. The formation of the oxide layer is capped with either a monolayer of strontium or a monolayer of titanium to act as a nucleating site for the subsequent deposition of the monocrystalline germanium. The monolayer of strontium or titanium provides a nucleating site to which the first monolayer of germanium can bond.
Example 5
[0050] This example also illustrates materials useful in a structure 40 as illustrated in FIG. 2. Substrate material 22, accommodating buffer layer 24, monocrystalline compound semiconductor material layer 26 and template layer 30 can be the same as those described above in example 2. In addition, a buffer layer 32 is inserted between accommodating buffer layer 24 and overlying monocrystalline compound semiconductor material layer 26. Buffer layer 32, a further monocrystalline semiconductor material, can be, for example, a graded layer of indium gallium arsenide (InGaAs) or indium aluminum arsenide (InAlAs). In accordance with one aspect of this embodiment, buffer layer 32 includes InGaAs, in which the indium composition varies from 0 to about 50%. The additional buffer layer 32 preferably has a thickness of about 10-30 nm. Varying the composition of buffer layer 32 from GaAs to InGaAs serves to provide a lattice match between the underlying monocrystalline oxide material 24 and the overlying layer 26 of monocrystalline compound semiconductor material. Such a buffer layer 32 is especially advantageous if there is a lattice mismatch between accommodating buffer layer 24 and monocrystalline compound semiconductor material layer 26.
Example 6
[0051] This example provides exemplary materials useful in structure 34, as illustrated in FIG. 3. Substrate material 22, template layer 30, and monocrystalline compound semiconductor material layer 26 may be the same as those described above in connection with example 1.
[0052] Amorphous layer 36 is an amorphous oxide layer which is suitably formed of a combination of amorphous intermediate layer materials (e.g., layer 28 materials as described above) and accommodating buffer layer materials (e.g., layer 24 materials as described above). For example, amorphous layer 36 may include a combination of SiOxand SrzBa1−zTiO3(where z ranges from 0 to 1),which combine or mix, at least partially, during an anneal process to form amorphous oxide layer 36.
[0053] The thickness of amorphous layer 36 may vary from application to application and may depend on such factors as desired insulating properties of layer 36, type of semiconductor material comprising layer 26, and the like. In accordance with one exemplary aspect of the present embodiment, layer 36 thickness is about 2 nm to about 100 nm, preferably about 2-10 nm, and more preferably about 5-6 nm.
[0054] Layer 38 comprises a monocrystalline compound semiconductor material that can be grown epitaxially over a monocrystalline oxide material such as material used to form accommodating buffer layer 24. In accordance with one embodiment of the invention, layer 38 includes the same materials as those comprising layer 26. For example, if layer 26 includes GaAs, layer 38 also includes GaAs. However, in accordance with other embodiments of the present invention, layer 38 may include materials different from those used to form layer 26. In accordance with one exemplary embodiment of the invention, layer 38 is about 1 monolayer to about 100 nm thick.
[0055] Referring again to FIGS. 1-3, substrate 22 is a monocrystalline substrate such as a monocrystalline silicon substrate. The crystalline structure of the monocrystalline substrate is characterized by a lattice constant and by a lattice orientation. In similar manner, accommodating buffer layer 24 is also a monocrystalline material and the lattice of that monocrystalline material is characterized by a lattice constant and a crystal orientation. The lattice constants of accommodating buffer layer 24 and monocrystalline substrate 22 must be closely matched or, alternatively, must be such that upon rotation of one crystal orientation with respect to the other crystal orientation, a substantial match in lattice constants is achieved. In this context the terms “substantially equal” and “substantially matched” mean that there is sufficient similarity between the lattice constants to permit the growth of a high quality crystalline layer on the underlying layer.
[0056] FIG. 4 illustrates graphically the relationship of the achievable thickness of a grown crystal layer of high crystalline quality as a function of the mismatch between the lattice constants of the host crystal and the grown crystal. Curve 42 illustrates the boundary of high crystalline quality material. The area to the right of curve 42 represents layers that tend to be polycrystalline. With no lattice mismatch, it is theoretically possible to grow an infinitely thick, high quality epitaxial layer on the host crystal. As the mismatch in lattice constants increases, the thickness of achievable, high quality crystalline layer decreases rapidly. As a reference point, for example, if the lattice constants between the host crystal and the grown layer are mismatched by more than about 2%, monocrystalline epitaxial layers in excess of about 20 nm cannot be achieved.
[0057] In accordance with one embodiment, substrate 22 is a (100) or (111) oriented monocrystalline silicon wafer and accommodating buffer layer 24 is a layer of strontium barium titanate. Substantial matching of lattice constants between these two materials is achieved by rotating the crystal orientation of the titanate material 24 by 45° with respect to the crystal orientation of the silicon substrate wafer 22. The inclusion in the structure of amorphous interface layer 28, a silicon oxide layer in this example, if it is of sufficient thickness, serves to reduce strain in the titanate monocrystalline layer 24 that might result from any mismatch in the lattice constants of the host silicon wafer 22 and the grown titanate layer 24. As a result, a high quality, thick, monocrystalline titanate layer 24 is achievable.
[0058] Still referring to FIGS. 1-3, layer 26 is a layer of epitaxially grown monocrystalline material and that crystalline material is also characterized by a crystal lattice constant and a crystal orientation. In accordance with one embodiment of the invention, the lattice constant of layer 26 differs from the lattice constant of substrate 22. To achieve high crystalline quality in this epitaxially grown monocrystalline layer, accommodating buffer layer 24 must be of high crystalline quality. In addition, in order to achieve high crystalline quality in layer 26, substantial matching between the crystal lattice constant of the host crystal, in this case, monocrystalline accommodating buffer layer 24, and grown crystal 26 is desired. With properly selected materials this substantial matching of lattice constants is achieved as a result of rotation of the crystal orientation of grown crystal 26 with respect to the orientation of host crystal 24. If grown crystal 26 is gallium arsenide, aluminum gallium arsenide, zinc selenide, or zinc sulfur selenide and accommodating buffer layer 24 is monocrystalline SrxBa1−xTiO3, substantial matching of crystal lattice constants of the two materials is achieved, wherein the crystal orientation of grown layer 26 is rotated by 45° with respect to the orientation of the host monocrystalline oxide 24. Similarly, if host material 24 is a strontium or barium zirconate or a strontium or barium hafnate or barium tin oxide and compound semiconductor layer 26 is indium phosphide or gallium indium arsenide or aluminum indium arsenide, substantial matching of crystal lattice constants can be achieved by rotating the orientation of grown crystal layer 26 by 45° with respect to host oxide crystal 24. In some instances, a crystalline semiconductor buffer layer 32 between host oxide 24 and grown compound semiconductor layer 26 can be used to reduce strain in grown monocrystalline compound semiconductor layer 26 that might result from small differences in lattice constants. Better crystalline quality in grown monocrystalline compound semiconductor layer 26 can thereby be achieved.
[0059] The following example illustrates a process, in accordance with one embodiment, for fabricating a semiconductor structure such as the structures depicted in FIGS. 1-3. The process starts by providing a monocrystalline semiconductor substrate 22 comprising silicon or germanium. In accordance with a preferred embodiment, semiconductor substrate 22 is a silicon wafer having a (100) orientation. Substrate 22 is preferably oriented on axis or, at most, about 4° off axis. At least a portion of semiconductor substrate 22 has a bare surface, although other portions of the substrate, as described below, may encompass other structures. The term “bare” in this context means that the surface in the portion of substrate 22 has been cleaned to remove any oxides, contaminants, or other foreign material. As is well known, bare silicon is highly reactive and readily forms a native oxide. The term “bare” is intended to encompass such a native oxide. A thin silicon oxide may also be intentionally grown on the semiconductor substrate, although such a grown oxide is not essential to the process. In order to epitaxially grow a monocrystalline oxide layer 24 overlying monocrystalline substrate 22, the native oxide layer must first be removed to expose the crystalline structure of underlying substrate 22. The following process is preferably carried out by molecular beam epitaxy (MBE), although other epitaxial processes may also be used in accordance with the present invention. The native oxide can be removed by first thermally depositing a thin layer of strontium, barium, a combination of strontium and barium, or other alkaline earth metals or combinations of alkaline earth metals in an MBE apparatus. In the case where strontium is used, the substrate 22 is then heated to a temperature of about 750° C. to cause the strontium to react with the native silicon oxide layer. The strontium serves to reduce the silicon oxide to leave a silicon oxide-free surface. The resultant surface, which exhibits an ordered 2×1 structure, includes strontium, oxygen, and silicon. The ordered 2×1 structure forms a template for the ordered growth of an overlying layer 24 of a monocrystalline oxide. The template provides the necessary chemical and physical properties to nucleate the crystalline growth of an overlying layer 24.
[0060] In accordance with an alternate embodiment, the native silicon oxide can be converted and the surface of substrate 22 can be prepared for the growth of a monocrystalline oxide layer 24 by depositing an alkaline earth metal oxide, such as strontium oxide or barium oxide, onto the substrate surface by MBE at a low temperature and by subsequently heating the structure to a temperature of about 750° C. At this temperature a solid state reaction takes place between the strontium oxide and the native silicon oxide causing the reduction of the native silicon oxide and leaving an ordered 2×1 structure with strontium, oxygen, and silicon remaining on the substrate 22 surface. Again, this forms a template for the subsequent growth of an ordered monocrystalline oxide layer 24.
[0061] Following the removal of the silicon oxide from the surface of substrate 22, the substrate is cooled to a temperature in the range of about 200-800° C. and a layer 24 of strontium titanate is grown on the template layer by molecular beam epitaxy. The MBE process is initiated by opening shutters in the MBE apparatus to expose strontium, titanium and oxygen sources. The ratio of strontium and titanium is approximately 1:1. The partial pressure of oxygen is initially set at a minimum value to grow stoichiometric strontium titanate at a growth rate of about 0.3-0.5 nm per minute. After initiating growth of the strontium titanate, the partial pressure of oxygen is increased above the initial minimum value. The overpressure of oxygen causes the growth of an amorphous silicon oxide layer 28 at the interface between underlying substrate 22 and the growing strontium titanate layer 24. The growth of silicon oxide layer 28 results from the diffusion of oxygen through the growing strontium titanate layer 24 to the interface where the oxygen reacts with silicon at the surface of underlying substrate 22. The strontium titanate grows as an ordered (100) monocrystal 24 with the (100) crystalline orientation rotated by 45° with respect to the underlying substrate 22. Strain that otherwise might exist in strontium titanate layer 24 because of the small mismatch in lattice constant between silicon substrate 22 and the growing crystal 24 is relieved in amorphous silicon oxide intermediate layer 28.
[0062] After strontium titanate layer 24 has been grown to the desired thickness, the monocrystalline strontium titanate is capped by a template layer 30 that is conducive to the subsequent growth of an epitaxial layer of a desired compound semiconductor material 26. For the subsequent growth of a layer 26 of gallium arsenide, the MBE growth of strontium titanate monocrystalline layer 24 can be capped by terminating the growth with 1-2 monolayers of titanium, 1-2 monolayers of titanium-oxygen or with 1-2 monolayers of strontium-oxygen. Following the formation of this capping layer, arsenic is deposited to form a Ti—As bond, a Ti—O—As bond or a Sr—O—As. Any of these form an appropriate template 30 for deposition and formation of a gallium arsenide monocrystalline layer 26. Following the formation of template 30, gallium is subsequently introduced to the reaction with the arsenic and gallium arsenide 26 forms. Alternatively, gallium can be deposited on the capping layer to form a Sr—O—Ga bond, and arsenic is subsequently introduced with the gallium to form the GaAs.
[0063] FIG. 5 is a high resolution Transmission Electron Micrograph (TEM) of semiconductor material manufactured in accordance with the present invention. Single crystal SrTiO3 accommodating buffer layer 24 was grown epitaxially on silicon substrate 22. During this growth process, amorphous interfacial layer 28 is formed which relieves strain due to lattice mismatch. GaAs compound semiconductor layer 26 was then grown epitaxially using template layer 30.
[0064] FIG. 6 illustrates an x-ray diffraction spectrum taken on a structure including GaAs compound semiconductor layer 26 grown on silicon substrate 22 using accommodating buffer layer 24. The peaks in the spectrum indicate that both the accommodating buffer layer 24 and GaAs compound semiconductor layer 26 are single crystal and (100) orientated.
[0065] The structure illustrated in FIG. 2 can be formed by the process discussed above with the addition of an additional buffer layer 32 deposition step. Additional buffer layer 32 is formed overlying template layer 30 before the deposition of monocrystalline compound semiconductor layer 26. If additional buffer layer 32 is a compound semiconductor superlattice, such a superlattice can be deposited, by MBE for example, on the template 30 described above. If instead additional buffer layer 32 is a layer of germanium, the process above is modified to cap strontium titanate monocrystalline layer 24 with a final layer of either strontium or titanium and then by depositing germanium to react with the strontium or titanium. The germanium buffer layer 32 can then be deposited directly on this template 30.
[0066] Structure 34, illustrated in FIG. 3, may be formed by growing an accommodating buffer layer, forming an amorphous oxide layer over substrate 22, and growing semiconductor layer 38 over the accommodating buffer layer, as described above. The accommodating buffer layer and the amorphous oxide layer are then exposed to an anneal process sufficient to change the crystalline structure of the accommodating buffer layer from monocrystalline to amorphous, thereby forming an amorphous layer such that the combination of the amorphous oxide layer and the now amorphous accommodating buffer layer form a single amorphous oxide layer 36. Layer 26 is then subsequently grown over layer 38. Alternatively, the anneal process may be carried out subsequent to growth of layer 26.
[0067] In accordance with one aspect of this embodiment, layer 36 is formed by exposing substrate 22, the accommodating buffer layer, the amorphous oxide layer, and semiconductor layer 38 to a rapid thermal anneal process with a peak temperature of about 700° C. to about 1000° C. and a process time of about 5 seconds to about 10 minutes. However, other suitable anneal processes may be employed to convert the accommodating buffer layer to an amorphous layer in accordance with the present invention. For example, laser annealing or “conventional” thermal annealing processes (in the proper environment) may be used to form layer 36. When conventional thermal annealing is employed to form layer 36, an overpressure of one or more constituents of layer 30 may be required to prevent degradation of layer 38 during the anneal process. For example, when layer 38 includes GaAs, the anneal environment preferably includes an overpressure of arsenic to mitigate degradation of layer 38.
[0068] As noted above, layer 38 of structure 34 may include any materials suitable for either of layers 32 or 26. Accordingly, any deposition or growth methods described in connection with either layer 32 or 26, may be employed to deposit layer 38.
[0069] FIG. 7 is a high resolution Transmission Electron Micrograph (TEM) of semiconductor material manufactured in accordance with the embodiment of the invention illustrated in FIG. 3. In accordance with this embodiment, a single crystal SrTiO3 accommodating buffer layer was grown epitaxially on silicon substrate 22. During this growth process, an amorphous interfacial layer forms as described above. Next, GaAs layer 38 is formed above the accommodating buffer layer and the accommodating buffer layer is exposed to an anneal process to form amorphous oxide layer 36.
[0070] FIG. 8 illustrates an x-ray diffraction spectrum taken on a structure including GaAs compound semiconductor layer 38 and amorphous oxide layer 36 formed on silicon substrate 22. The peaks in the spectrum indicate that GaAs compound semiconductor layer 38 is single crystal and (100) orientated and the lack of peaks around 40 to 50 degrees indicates that layer 36 is amorphous.
[0071] The process described above illustrates a process for forming a semiconductor structure including a silicon substrate 22, an overlying oxide layer, and a monocrystalline gallium arsenide compound semiconductor layer 26 by the process of molecular beam epitaxy. The process can also be carried out by the process of chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), or the like. Further, by a similar process, other monocrystalline accommodating buffer layers 24 such as alkaline earth metal titanates, zirconates, hafnates, tantalates, vanadates, ruthenates, and niobates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide can also be grown. Further, by a similar process such as MBE, other III-V and II-VI monocrystalline compound semiconductor layers 26 can be deposited overlying monocrystalline oxide accommodating buffer layer 24.
[0072] Each of the variations of compound semiconductor materials 26 and monocrystalline oxide accommodating buffer layer 24 uses an appropriate template 30 for initiating the growth of the compound semiconductor layer. For example, if accommodating buffer layer 24 is an alkaline earth metal zirconate, the oxide can be capped by a thin layer of zirconium. The deposition of zirconium can be followed by the deposition of arsenic or phosphorus to react with the zirconium as a precursor to depositing indium gallium arsenide, indium aluminum arsenide, or indium phosphide respectively. Similarly, if monocrystalline oxide accommodating buffer layer 24 is an alkaline earth metal hafnate, the oxide layer can be capped by a thin layer of hafnium. The deposition of hafnium is followed by the deposition of arsenic or phosphorous to react with the hafnium as a precursor to the growth of an indium gallium arsenide, indium aluminum arsenide, or indium phosphide layer 26, respectively. In a similar manner, strontium titanate 24 can be capped with a layer of strontium or strontium and oxygen, and barium titanate 24 can be capped with a layer of barium or barium and oxygen. Each of these depositions can be followed by the deposition of arsenic or phosphorus to react with the capping material to form a template 30 for the deposition of a compound semiconductor material layer 26 comprising indium gallium arsenide, indium aluminum arsenide, or indium phosphide.
[0073] The formation of a device structure in accordance with another embodiment of the invention is illustrated schematically in cross-section in FIGS. 9-12. Like the previously described embodiments referred to in FIGS. 1-3, this embodiment of the invention involves the process of forming a compliant substrate utilizing the epitaxial growth of single crystal oxides, such as the formation of accommodating buffer layer 24 previously described with reference to FIGS. 1 and 2 and amorphous layer 36 previously described with reference to FIG. 3, and the formation of a template layer 30. However, the embodiment illustrated in FIGS. 9-12 utilizes a template that includes a surfactant to facilitate layer-by-layer monocrystalline material growth.
[0074] Turning now to FIG. 9, an amorphous intermediate layer 58 is grown on substrate 52 at the interface between substrate 52 and a growing accommodating buffer layer 54, which is preferably a monocrystalline crystal oxide layer, by the oxidation of substrate 52 during the growth of layer 54. Layer 54 is preferably a monocrystalline oxide material such as a monocrystalline layer of SrzBa1−zTiO3where z ranges from 0 to 1. However, layer 54 may also comprise any of those compounds previously described with reference to layer 24 in FIGS. 1-2 and any of those compounds previously described with reference to layer 36 in FIG. 3 which is formed from layers 24 and 28 referenced in FIGS. 1 and 2.
[0075] Layer 54 is grown with a strontium (Sr) terminated surface represented in FIG. 9 by hatched line 55 which is followed by the addition of a template layer 60 which includes a surfactant layer 61 and capping layer 63 as illustrated in FIGS. 10 and 11. Surfactant layer 61 may comprise, but is not limited to, elements such as Al, In and Ga, but will be dependent upon the composition of layer 54 and the overlying layer of monocrystalline material for optimal results. In one exemplary embodiment, aluminum (Al) is used for surfactant layer 61 and functions to modify the surface and surface energy of layer 54. Preferably, surfactant layer 61 is epitaxially grown, to a thickness of one to two monolayers, over layer 54 as illustrated in FIG. 10 by way of molecular beam epitaxy (MBE), although other epitaxial processes may also be performed including chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), or the like.
[0076] Surfactant layer 61 is then exposed to a Group V element such as arsenic, for example, to form capping layer 63 as illustrated in FIG. 11. Surfactant layer 61 may be exposed to a number of materials to create capping layer 63 such as elements which include, but are not limited to, As, P, Sb and N. Surfactant layer 61 and capping layer 63 combine to form template layer 60.
[0077] Monocrystalline material layer 66, which in this example is a compound semiconductor such as GaAs, is then deposited via MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, or the like to form the final structure illustrated in FIG. 12.
[0078] FIGS. 13-16 illustrate possible molecular bond structures for a specific example of a compound semiconductor structure formed in accordance with the embodiment of the invention illustrated in FIGS. 9-12. More specifically, FIGS. 13-16 illustrate the growth of GaAs (layer 66) on the strontium terminated surface of a strontium titanate monocrystalline oxide (layer 54) using a surfactant containing template (layer 60).
[0079] The growth of a monocrystalline material layer 66 such as GaAs on an accommodating buffer layer 54 such as a strontium titanium oxide over amorphous interface layer 58 and substrate layer 52, both of which may comprise materials previously described with reference to layers 28 and 22, respectively in FIGS. 1 and 2, illustrates a critical thickness of about 1000 Angstroms where the two-dimensional (2D) and three-dimensional (3D) growth shifts because of the surface energies involved. In order to maintain a true layer by layer growth (Frank Van der Mere growth), the following relationship must be satisfied:
[0080] δSTO>(δINT+δGaAs)
[0081] where the surface energy of the monocrystalline oxide layer 54 must be greater than the surface energy of the amorphous interface layer 58 added to the surface energy of the GaAs layer 66. Since it is impracticable to satisfy this equation, a surfactant containing template was used, as described above with reference to FIGS. 10-12, to increase the surface energy of the monocrystalline oxide layer 54 and also to shift the crystalline structure of the template to a diamond-like structure that is in compliance with the original GaAs layer.
[0082] FIG. 13 illustrates the molecular bond structure of a strontium terminated surface of a strontium titanate monocrystalline oxide layer. An aluminum surfactant layer is deposited on top of the strontium terminated surface and bonds with that surface as illustrated in FIG. 14, which reacts to form a capping layer comprising a monolayer of Al2Sr having the molecular bond structure illustrated in FIG. 14 which forms a diamond-like structure with an sp3hybrid terminated surface that is compliant with compound semiconductors such as GaAs. The structure is then exposed to As to form a layer of AlAs as shown in FIG. 15. GaAs is then deposited to complete the molecular bond structure illustrated in FIG. 16 which has been obtained by 2D growth. The GaAs can be grown to any thickness for forming other semiconductor structures, devices, or integrated circuits. Alkaline earth metals such as those in Group IIA are those elements preferably used to form the capping surface of the monocrystalline oxide layer 54 because they are capable of forming a desired molecular structure with aluminum.
[0083] In this embodiment, a surfactant containing template layer aids in the formation of a compliant substrate for the monolithic integration of various material layers including those comprised of Group III-V compounds to form high quality semiconductor structures, devices and integrated circuits. For example, a surfactant containing template may be used for the monolithic integration of a monocrystalline material layer such as a layer comprising Germanium (Ge), for example, to form high efficiency photocells.
[0084] Turning now to FIGS. 17-20, the formation of a device structure in accordance with still another embodiment of the invention is illustrated in cross-section. This embodiment utilizes the formation of a compliant substrate which relies on the epitaxial growth of single crystal oxides on silicon followed by the epitaxial growth of single crystal silicon onto the oxide.
[0085] An accommodating buffer layer 74 such as a monocrystalline oxide layer is first grown on a substrate layer 72, such as silicon, with an amorphous interface layer 78 as illustrated in FIG. 17. Monocrystalline oxide layer 74 may be comprised of any of those materials previously discussed with reference to layer 24 in FIGS. 1 and 2, while amorphous interface layer 78 is preferably comprised of any of those materials previously described with reference to the layer 28 illustrated in FIGS. 1 and 2. Substrate 72, although preferably silicon, may also comprise any of those materials previously described with reference to substrate 22 in FIGS. 1-3.
[0086] Next, a silicon layer 81 is deposited over monocrystalline oxide layer 74 via MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, and the like as illustrated in FIG. 18 with a thickness of a few hundred Angstroms but preferably with a thickness of about 50 Angstroms. Monocrystalline oxide layer 74 preferably has a thickness of about 20 to 100 Angstroms.
[0087] Rapid thermal annealing is then conducted in the presence of a carbon source such as acetylene or methane, for example at a temperature within a range of about 800□C. to 1000□C. to form capping layer 82 and silicate amorphous layer 86. However, other suitable carbon sources may be used as long as the rapid thermal annealing step functions to amorphize the monocrystalline oxide layer 74 into a silicate amorphous layer 86 and carbonize the top silicon layer 81 to form capping layer 82 which in this example would be a silicon carbide (SiC) layer as illustrated in FIG. 19. The formation of amorphous layer 86 is similar to the formation of layer 36 illustrated in FIG. 3 and may comprise any of those materials described with reference to layer 36 in FIG. 3 but the preferable material will be dependent upon the capping layer 82 used for silicon layer 81.
[0088] Finally, a compound semiconductor layer 96, shown in FIG. 20, such as gallium nitride (GaN) is grown over the SiC surface by way of MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, or the like to form a high quality compound semiconductor material for device formation. More specifically, the deposition of GaN and GaN based systems such as GaInN and AlGaN will result in the formation of dislocation nets confined at the silicon/amorphous region. The resulting nitride containing compound semiconductor material may comprise elements from groups III, IV and V of the periodic table and is defect free.
[0089] Although GaN has been grown on SiC substrate in the past, this embodiment of the invention possesses a one step formation of the compliant substrate containing a SiC top surface and an amorphous layer on a Si surface. More specifically, this embodiment of the invention uses an intermediate single crystal oxide layer that is amorphized to form a silicate layer which adsorbs the strain between the layers. Moreover, unlike past use of a SiC substrate, this embodiment of the invention is not limited by wafer size which is usually less than 50 mm in diameter for prior art SiC substrates.
[0090] The monolithic integration of nitride containing semiconductor compounds containing group III-V nitrides and silicon devices can be used for high temperature RF applications and optoelectronics. GaN systems have particular use in the photonic industry for the blue/green and UV light sources and detection. High brightness light emitting diodes (LEDs) and lasers may also be formed within the GaN system.
[0091] FIGS. 21-23 schematically illustrate, in cross-section, the formation of another embodiment of a device structure in accordance with the invention. This embodiment includes a compliant layer that functions as a transition layer that uses clathrate or Zintl type bonding. More specifically, this embodiment utilizes an intermetallic template layer to reduce the surface energy of the interface between material layers thereby allowing for two dimensional layer by layer growth.
[0092] The structure illustrated in FIG. 21 includes a monocrystalline substrate 102, an amorphous interface layer 108 and an accommodating buffer layer 104. Amorphous interface layer 108 is formed on substrate 102 at the interface between substrate 102 and accommodating buffer layer 104 as previously described with reference to FIGS. 1 and 2. Amorphous interface layer 108 may comprise any of those materials previously described with reference to amorphous interface layer 28 in FIGS. 1 and 2. Substrate 102 is preferably silicon but may also comprise any of those materials previously described with reference to substrate 22 in FIGS. 1-3.
[0093] A template layer 130 is deposited over accommodating buffer layer 104 as illustrated in FIG. 22 and preferably comprises a thin layer of Zintl type phase material composed of metals and metalloids having a great deal of ionic character. As in previously described embodiments, template layer 130 is deposited by way of MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, or the like to achieve a thickness of one monolayer. Template layer 130 functions as a “soft” layer with non-directional bonding but high crystallinity which absorbs stress build up between layers having lattice mismatch. Materials for template 130 may include, but are not limited to, materials containing Si, Ga, In, and Sb such as, for example, AlSr2, (MgCaYb)Ga2, (Ca,Sr,Eu,Yb)In2, BaGe2As, and SrSn2As2.
[0094] A monocrystalline material layer 126 is epitaxially grown over template layer 130 to achieve the final structure illustrated in FIG. 23. As a specific example, an SrAl2layer may be used as template layer 130 and an appropriate monocrystalline material layer 126 such as a compound semiconductor material GaAs is grown over the SrAl2. The Al—Ti (from the accommodating buffer layer of layer of SrzBa1−zTiO3where z ranges from 0 to 1) bond is mostly metallic while the Al—As (from the GaAs layer) bond is weakly covalent. The Sr participates in two distinct types of bonding with part of its electric charge going to the oxygen atoms in the lower accommodating buffer layer 104 comprising SrzBa1−zTiO3to participate in ionic bonding and the other part of its valence charge being donated to Al in a way that is typically carried out with Zintl phase materials. The amount of the charge transfer depends on the relative electronegativity of elements comprising the template layer 130 as well as on the interatomic distance. In this example, Al assumes an sp3hybridization and can readily form bonds with monocrystalline material layer 126, which in this example, comprises compound semiconductor material GaAs.
[0095] The compliant substrate produced by use of the Zintl type template layer used in this embodiment can absorb a large strain without a significant energy cost. In the above example, the bond strength of the Al is adjusted by changing the volume of the SrAl2layer thereby making the device tunable for specific applications which include the monolithic integration of III-V and Si devices and the monolithic integration of high-k dielectric materials for CMOS technology.
[0096] Clearly, those embodiments specifically describing structures having compound semiconductor portions and Group IV semiconductor portions, are meant to illustrate embodiments of the present invention and not limit the present invention. There are a multiplicity of other combinations and other embodiments of the present invention. For example, the present invention includes structures and methods for fabricating material layers which form semiconductor structures, devices and integrated circuits including other layers such as metal and non-metal layers. More specifically, the invention includes structures and methods for forming a compliant substrate which is used in the fabrication of semiconductor structures, devices and integrated circuits and the material layers suitable for fabricating those structures, devices, and integrated circuits. By using embodiments of the present invention, it is now simpler to integrate devices that include monocrystalline layers comprising semiconductor and compound semiconductor materials as well as other material layers that are used to form those devices with other components that work better or are easily and/or inexpensively formed within semiconductor or compound semiconductor materials. This allows a device to be shrunk, the manufacturing costs to decrease, and yield and reliability to increase.
[0097] In accordance with one embodiment of this invention, a monocrystalline semiconductor or compound semiconductor wafer can be used in forming monocrystalline material layers over the wafer. In this manner, the wafer is essentially a “handle” wafer used during the fabrication of semiconductor electrical components within a monocrystalline layer overlying the wafer. Therefore, electrical components can be formed within semiconductor materials over a wafer of at least approximately 200 millimeters in diameter and possibly at least approximately 300 millimeters.
[0098] By the use of this type of substrate, a relatively inexpensive “handle” wafer overcomes the fragile nature of compound semiconductor or other monocrystalline material wafers by placing them over a relatively more durable and easy to fabricate base material. Therefore, an integrated circuit can be formed such that all electrical components, and particularly all active electronic devices, can be formed within or using the monocrystalline material layer even though the substrate itself may include a monocrystalline semiconductor material. Fabrication costs for compound semiconductor devices and other devices employing non-silicon monocrystalline materials should decrease because larger substrates can be processed more economically and more readily compared to the relatively smaller and more fragile substrates (e.g. conventional compound semiconductor wafers).
[0099] FIG. 24 illustrates schematically, in cross-section, a device structure 50 in accordance with a further embodiment. Device structure 50 includes a monocrystalline semiconductor substrate 52, preferably a monocrystalline silicon wafer. Monocrystalline semiconductor substrate 52 includes two regions, 53 and 57. An electrical semiconductor component generally indicated by the dashed line 56 is formed, at least partially, in region 53. Electrical component 56 can be a resistor, a capacitor, an active semiconductor component such as a diode or a transistor or an integrated circuit such as a CMOS integrated circuit. For example, electrical semiconductor component 56 can be a CMOS integrated circuit configured to perform digital signal processing or another function for which silicon integrated circuits are well suited. The electrical semiconductor component in region 53 can be formed by conventional semiconductor processing as well known and widely practiced in the semiconductor industry. A layer of insulating material 59 such as a layer of silicon dioxide or the like may overlie electrical semiconductor component 56.
[0100] Insulating material 59 and any other layers that may have been formed or deposited during the processing of semiconductor component 56 in region 53 are removed from the surface of region 57 to provide a bare silicon surface in that region. As is well known, bare silicon surfaces are highly reactive and a native silicon oxide layer can quickly form on the bare surface. A layer of barium or barium and oxygen is deposited onto the native oxide layer on the surface of region 57 and is reacted with the oxidized surface to form a first template layer (not shown). In accordance with one embodiment, a monocrystalline oxide layer is formed overlying the template layer by a process of molecular beam epitaxy. Reactants including barium, titanium and oxygen are deposited onto the template layer to form the monocrystalline oxide layer. Initially during the deposition the partial pressure of oxygen is kept near the minimum necessary to fully react with the barium and titanium to form monocrystalline barium titanate layer. The partial pressure of oxygen is then increased to provide an overpressure of oxygen and to allow oxygen to diffuse through the growing monocrystalline oxide layer. The oxygen diffusing through the barium titanate reacts with silicon at the surface of region 57 to form an amorphous layer of silicon oxide 62 on second region 57 and at the interface between silicon substrate 52 and the monocrystalline oxide layer 65. Layers 65 and 62 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
[0101] In accordance with an embodiment, the step of depositing the monocrystalline oxide layer 65 is terminated by depositing a second template layer 64, which can be 1-10 monolayers of titanium, barium, barium and oxygen, or titanium and oxygen. A layer 66 of a monocrystalline compound semiconductor material is then deposited overlying second template layer 64 by a process of molecular beam epitaxy. The deposition of layer 66 is initiated by depositing a layer of arsenic onto template 64. This initial step is followed by depositing gallium and arsenic to form monocrystalline gallium arsenide 66. Alternatively, strontium can be substituted for barium in the above example.
[0102] In accordance with a further embodiment, a semiconductor component, generally indicated by a dashed line 68 is formed in compound semiconductor layer 66. Semiconductor component 68 can be formed by processing steps conventionally used in the fabrication of gallium arsenide or other III-V compound semiconductor material devices. Semiconductor component 68 can be any active or passive component, and preferably is a semiconductor laser, light emitting diode, photodetector, heterojunction bipolar transistor (HBT), high frequency MESFET, or other component that utilizes and takes advantage of the physical properties of compound semiconductor materials. A metallic conductor schematically indicated by the line 70 can be formed to electrically couple device 68 and device 56, thus implementing an integrated device that includes at least one component formed in silicon substrate 52 and one device formed in monocrystalline compound semiconductor material layer 66. Although illustrative structure 50 has been described as a structure formed on a silicon substrate 52 and having a barium (or strontium) titanate layer 650 and a gallium arsenide layer 66, similar devices can be fabricated using other substrates, monocrystalline oxide layers and other compound semiconductor layers as described elsewhere in this disclosure.
[0103] FIG. 25 illustrates a semiconductor structure 71 in accordance with a further embodiment. Structure 71 includes a monocrystalline semiconductor substrate 73 such as a monocrystalline silicon wafer that includes a region 75 and a region 76. An electrical component schematically illustrated by the dashed line 79 is formed in region 75 using conventional silicon device processing techniques commonly used in the semiconductor industry. Using process steps similar to those described above, a monocrystalline oxide layer 80 and an intermediate amorphous silicon oxide layer 83 are formed overlying region 76 of substrate 73. A template layer 84 and subsequently a monocrystalline semiconductor layer 87 are formed overlying monocrystalline oxide layer 80. In accordance with a further embodiment, an additional monocrystalline oxide layer 88 is formed overlying layer 87 by process steps similar to those used to form layer 80, and an additional monocrystalline semiconductor layer 90 is formed overlying monocrystalline oxide layer 88 by process steps similar to those used to form layer 87. In accordance with one embodiment, at least one of layers 87 and 90 are formed from a compound semiconductor material. Layers 80 and 83 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
[0104] A semiconductor component generally indicated by a dashed line 92 is formed at least partially in monocrystalline semiconductor layer 87. In accordance with one embodiment, semiconductor component 92 may include a field effect transistor having a gate dielectric formed, in part, by monocrystalline oxide layer 88. In addition, monocrystalline semiconductor layer 90 can be used to implement the gate electrode of that field effect transistor. In accordance with one embodiment, monocrystalline semiconductor layer 87 is formed from a group III-V compound and semiconductor component 92 is a radio frequency amplifier that takes advantage of the high mobility characteristic of group III-V component materials. In accordance with yet a further embodiment, an electrical interconnection schematically illustrated by the line 94 electrically interconnects component 79 and component 92. Structure 71 thus integrates components that take advantage of the unique properties of the two monocrystalline semiconductor materials.
[0105] Attention is now directed to a method for forming exemplary portions of illustrative composite semiconductor structures or composite integrated circuits like 50 or 71. In particular, the illustrative composite semiconductor structure or integrated circuit 103 shown in FIGS. 26-30 includes a compound semiconductor portion 1022, a bipolar portion 1024, and a MOS portion 1026. In FIG. 26, a p-type doped, monocrystalline silicon substrate 110 is provided having a compound semiconductor portion 1022, a bipolar portion 1024, and an MOS portion 1026. Within bipolar portion 1024, the monocrystalline silicon substrate 110 is doped to form an N+ buried region 1102. A lightly p-type doped epitaxial monocrystalline silicon layer 1104 is then formed over the buried region 1102 and the substrate 110. A doping step is then performed to create a lightly n-type doped drift region 1117 above the N+ buried region 1102. The doping step converts the dopant type of the lightly p-type epitaxial layer within a section of the bipolar region 1024 to a lightly n-type monocrystalline silicon region. A field isolation region 1106 is then formed between and around the bipolar portion 1024 and the MOS portion 1026. A gate dielectric layer 1110 is formed over a portion of the epitaxial layer 1104 within MOS portion 1026, and the gate electrode 1112 is then formed over the gate dielectric layer 1110. Sidewall spacers 1115 are formed along vertical sides of the gate electrode 1112 and gate dielectric layer 1110.
[0106] A p-type dopant is introduced into the drift region 1117 to form an active or intrinsic base region 1114. An n-type, deep collector region 1108 is then formed within the bipolar portion 1024 to allow electrical connection to the buried region 1102. Selective n-type doping is performed to form N+ doped regions 1116 and the emitter region 1120. N+ doped regions 1116 are formed within layer 1104 along adjacent sides of the gate electrode 1112 and are source, drain, or source/drain regions for the MOS transistor. The N+ doped regions 1116 and emitter region 1120 have a doping concentration of at least 1E19 atoms per cubic centimeter to allow ohmic contacts to be formed. A p-type doped region is formed to create the inactive or extrinsic base region 1118 which is a P+ doped region (doping concentration of at least 1E19 atoms per cubic centimeter).
[0107] In the embodiment described, several processing steps have been performed but are not illustrated or further described, such as the formation of well regions, threshold adjusting implants, channel punchthrough prevention implants, field punchthrough prevention implants, as well as a variety of masking layers. The formation of the device up to this point in the process is performed using conventional steps. As illustrated, a standard N-channel MOS transistor has been formed within the MOS region 1026, and a vertical NPN bipolar transistor has been formed within the bipolar portion 1024. Although illustrated with a NPN bipolar transistor and a N-channel MOS transistor, device structures and circuits in accordance with various embodiments may additionally or alternatively include other electronic devices formed using the silicon substrate. As of this point, no circuitry has been formed within the compound semiconductor portion 1022.
[0108] After the silicon devices are formed in regions 1024 and 1026, a protective layer 1122 is formed overlying devices in regions 1024 and 1026 to protect devices in regions 1024 and 1026 from potential damage resulting from device formation in region 1022. Layer 1122 may be formed of, for example, an insulating material such as silicon oxide or silicon nitride.
[0109] All of the layers that have been formed during the processing of the bipolar and MOS portions of the integrated circuit, except for epitaxial layer 1104 but including protective layer 1122, are now removed from the surface of compound semiconductor portion 1022. A bare silicon surface is thus provided for the subsequent processing of this portion, for example in the manner set forth above.
[0110] An accommodating buffer layer 124 is then formed over the substrate 110 as illustrated in FIG. 27. The accommodating buffer layer will form as a monocrystalline layer over the properly prepared (i.e., having the appropriate template layer) bare silicon surface in portion 1022. The portion of layer 124 that forms over portions 1024 and 1026, however, may be polycrystalline or amorphous because it is formed over a material that is not monocrystalline, and therefore, does not nucleate monocrystalline growth. The accommodating buffer layer 124 typically is a monocrystalline metal oxide or nitride layer and typically has a thickness in a range of approximately 2-100 nanometers. In one particular embodiment, the accommodating buffer layer is approximately 5-15 nm thick. During the formation of the accommodating buffer layer, an amorphous intermediate layer 122 is formed along the uppermost silicon surfaces of the integrated circuit 103. This amorphous intermediate layer 122 typically includes an oxide of silicon and has a thickness and range of approximately 1-5 nm. In one particular embodiment, the thickness is approximately 2 nm. Following the formation of the accommodating buffer layer 124 and the amorphous intermediate layer 122, a template layer 125 is then formed and has a thickness in a range of approximately one to ten monolayers of a material. In one particular embodiment, the material includes titanium-arsenic, strontium-oxygen-arsenic, or other similar materials as previously described with respect to FIGS. 1-5. A monocrystalline compound semiconductor layer 132 is then epitaxially grown overlying the monocrystalline portion of accommodating buffer layer 124 as shown in FIG. 28. The portion of layer 132 that is grown over portions of layer 124 that are not monocrystalline may be polycrystalline or amorphous. The compound semiconductor layer can be formed by a number of methods and typically includes a material such as gallium arsenide, aluminum gallium arsenide, indium phosphide, or other compound semiconductor materials as previously mentioned. The thickness of the layer is in a range of approximately 1-5,000 nm, and more preferably 100-2000 nm. Furthermore, additional monocrystalline layers may be formed above layer 132, as discussed in more detail below in connection with FIGS. 31-32.
[0111] In this particular embodiment, each of the elements within the template layer are also present in the accommodating buffer layer 124, the monocrystalline compound semiconductor material 132, or both. Therefore, the delineation between the template layer 125 and its two immediately adjacent layers disappears during processing. Therefore, when a transmission electron microscopy (TEM) photograph is taken, an interface between the accommodating buffer layer 124 and the monocrystalline compound semiconductor layer 132 is seen.
[0112] After at least a portion of layer 132 is formed in region 1022, layers 122 and 124 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer. If only a portion of layer 132 is formed prior to the anneal process, the remaining portion may be deposited onto structure 103 prior to further processing.
[0113] At this point in time, sections of the compound semiconductor layer 132 and the accommodating buffer layer 124 (or of the amorphous accommodating layer if the annealing process described above has been carried out) are removed from portions overlying the bipolar portion 1024 and the MOS portion 1026 as shown in FIG. 29. After the section of the compound semiconductor layer and the accommodating buffer layer 124 are removed, an insulating layer 142 is formed over protective layer 1122. The insulating layer 142 can include a number of materials such as oxides, nitrides, oxynitrides, low-k dielectrics, or the like. As used herein, low-k is a material having a dielectric constant no higher than approximately 3.5. After the insulating layer 142 has been deposited, it is then polished or etched to remove portions of the insulating layer 142 that overlie monocrystalline compound semiconductor layer 132.
[0114] A transistor 144 is then formed within the monocrystalline compound semiconductor portion 1022. A gate electrode 148 is then formed on the monocrystalline compound semiconductor layer 132. Doped regions 146 are then formed within the monocrystalline compound semiconductor layer 132. In this embodiment, the transistor 144 is a metal-semiconductor field-effect transistor (MESFET). If the MESFET is an n-type MESFET, the doped regions 146 and at least a portion of monocrystalline compound semiconductor layer 132 are also n-type doped. If a p-type MESFET were to be formed, then the doped regions 146 and at least a portion of monocrystalline compound semiconductor layer 132 would have just the opposite doping type. The heavier doped (N+) regions 146 allow ohmic contacts to be made to the monocrystalline compound semiconductor layer 132. At this point in time, the active devices within the integrated circuit have been formed. Although not illustrated in the drawing figures, additional processing steps such as formation of well regions, threshold adjusting implants, channel punchthrough prevention implants, field punchthrough prevention implants, and the like may be performed in accordance with the present invention. This particular embodiment includes an n-type MESFET, a vertical NPN bipolar transistor, and a planar n-channel MOS transistor. Many other types of transistors, including P-channel MOS transistors, p-type vertical bipolar transistors, p-type MESFETs, and combinations of vertical and planar transistors, can be used. Also, other electrical components, such as resistors, capacitors, diodes, and the like, may be formed in one or more of the portions 1022, 1024, and 1026.
[0115] Processing continues to form a substantially completed integrated circuit 103 as illustrated in FIG. 30. An insulating layer 152 is formed over the substrate 110. The insulating layer 152 may include an etch-stop or polish-stop region that is not illustrated in FIG. 30. A second insulating layer 154 is then formed over the first insulating layer 152. Portions of layers 154, 152, 142, 124, and 1122 are removed to define contact openings where the devices are to be interconnected. Interconnect trenches are formed within insulating layer 154 to provide the lateral connections between the contacts. As illustrated in FIG. 30, interconnect 1562 connects a source or drain region of the n-type MESFET within portion 1022 to the deep collector region 1108 of the NPN transistor within the bipolar portion 1024. The emitter region 1120 of the NPN transistor is connected to one of the doped regions 1116 of the n-channel MOS transistor within the MOS portion 1026. The other doped region 1116 is electrically connected to other portions of the integrated circuit that are not shown. Similar electrical connections are also formed to couple regions 1118 and 1112 to other regions of the integrated circuit.
[0116] A passivation layer 156 is formed over the interconnects 1562, 1564, and 1566 and insulating layer 154. Other electrical connections are made to the transistors as illustrated as well as to other electrical or electronic components within the integrated circuit 103 but are not illustrated in the FIGS. Further, additional insulating layers and interconnects may be formed as necessary to form the proper interconnections between the various components within the integrated circuit 103.
[0117] As can be seen from the previous embodiment, active devices for both compound semiconductor and Group IV semiconductor materials can be integrated into a single integrated circuit. Because there is some difficulty in incorporating both bipolar transistors and MOS transistors within a same integrated circuit, it may be possible to move some of the components within bipolar portion 1024 into the compound semiconductor portion 1022 or the MOS portion 1026. Therefore, the requirement of special fabricating steps solely used for making a bipolar transistor can be eliminated. Therefore, there would only be a compound semiconductor portion and a MOS portion to the integrated circuit.
[0118] In still another embodiment, an integrated circuit can be formed such that it includes an optical laser in a compound semiconductor portion and an optical interconnect (waveguide) to a MOS transistor within a Group IV semiconductor region of the same integrated circuit. FIGS. 31-37 include illustrations of one embodiment.
[0119] FIG. 31 includes an illustration of a cross-section view of a portion of an integrated circuit 160 that includes a monocrystalline silicon wafer 161. An amorphous intermediate layer 162 and an accommodating buffer layer 164, similar to those previously described, have been formed over wafer 161. Layers 162 and 164 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer. In this specific embodiment, the layers needed to form the optical laser will be formed first, followed by the layers needed for the MOS transistor. In FIG. 31, the lower mirror layer 166 includes alternating layers of compound semiconductor materials. For example, the first, third, and fifth films within the optical laser may include a material such as gallium arsenide, and the second, fourth, and sixth films within the lower mirror layer 166 may include aluminum gallium arsenide or vice versa. Layer 168 includes the active region that will be used for photon generation. Upper mirror layer 170 is formed in a similar manner to the lower mirror layer 166 and includes alternating films of compound semiconductor materials. In one particular embodiment, the upper mirror layer 170 may be p-type doped compound semiconductor materials, and the lower mirror layer 166 may be n-type doped compound semiconductor materials.
[0120] Another accommodating buffer layer 172, similar to the accommodating buffer layer 164, is formed over the upper mirror layer 170. In an alternative embodiment, the accommodating buffer layers 164 and 172 may include different materials. However, their function is essentially the same in that each is used for making a transition between a compound semiconductor layer and a monocrystalline Group IV semiconductor layer. Layer 172 may be subject to an annealing process as described above in connection with FIG. 3 to form an amorphous accommodating layer. A monocrystalline Group IV semiconductor layer 174 is formed over the accommodating buffer layer 172. In one particular embodiment, the monocrystalline Group IV semiconductor layer 174 includes germanium, silicon germanium, silicon germanium carbide, or the like.
[0121] In FIG. 32, the MOS portion is processed to form electrical components within this upper monocrystalline Group IV semiconductor layer 174. As illustrated in FIG. 32, a field isolation region 171 is formed from a portion of layer 174. A gate dielectric layer 173 is formed over the layer 174, and a gate electrode 175 is formed over the gate dielectric layer 173. Doped regions 177 are source, drain, or source/drain regions for the transistor 181, as shown. Sidewall spacers 179 are formed adjacent to the vertical sides of the gate electrode 175. Other components can be made within at least a part of layer 174. These other components include other transistors (n-channel or p-channel), capacitors, transistors, diodes, and the like.
[0122] A monocrystalline Group IV semiconductor layer is epitaxially grown over one of the doped regions 177. An upper portion 184 is P+ doped, and a lower portion 182 remains substantially intrinsic (undoped) as illustrated in FIG. 32. The layer can be formed using a selective epitaxial process. In one embodiment, an insulating layer (not shown) is formed over the transistor 181 and the field isolation region 171. The insulating layer is patterned to define an opening that exposes one of the doped regions 177. At least initially, the selective epitaxial layer is formed without dopants. The entire selective epitaxial layer may be intrinsic, or a p-type dopant can be added near the end of the formation of the selective epitaxial layer. If the selective epitaxial layer is intrinsic, as formed, a doping step may be formed by implantation or by furnace doping. Regardless how the P+ upper portion 184 is formed, the insulating layer is then removed to form the resulting structure shown in FIG. 32.
[0123] The next set of steps is performed to define the optical laser 180 as illustrated in FIG. 33. The field isolation region 171 and the accommodating buffer layer 172 are removed over the compound semiconductor portion of the integrated circuit. Additional steps are performed to define the upper mirror layer 170 and active layer 168 of the optical laser 180. The sides of the upper mirror layer 170 and active layer 168 are substantially coterminous.
[0124] Contacts 186 and 188 are formed for making electrical contact to the upper mirror layer 170 and the lower mirror layer 166, respectively, as shown in FIG. 33. Contact 186 has an annular shape to allow light (photons) to pass out of the upper mirror layer 170 into a subsequently formed optical waveguide.
[0125] An insulating layer 190 is then formed and patterned to define optical openings extending to the contact layer 186 and one of the doped regions 177 as shown in FIG. 34. The insulating material can be any number of different materials, including an oxide, nitride, oxynitride, low-k dielectric, or any combination thereof. After defining the openings 192, a higher refractive index material 202 is then formed within the openings to fill them and to deposit the layer over the insulating layer 190 as illustrated in FIG. 35. With respect to the higher refractive index material 202, “higher” is in relation to the material of the insulating layer 190 (i.e., material 202 has a higher refractive index compared to the insulating layer 190). Optionally, a relatively thin lower refractive index film (not shown) could be formed before forming the higher refractive index material 202. A hard mask layer 204 is then formed over the high refractive index layer 202. Portions of the hard mask layer 204, and high refractive index layer 202 are removed from portions overlying the opening and to areas closer to the sides of FIG. 35.
[0126] The balance of the formation of the optical waveguide, which is an optical interconnect, is completed as illustrated in FIG. 36. A deposition procedure (possibly a dep-etch process) is performed to effectively create sidewalls sections 212. In this embodiment, the sidewall sections 212 are made of the same material as material 202. The hard mask layer 204 is then removed, and a low refractive index layer 214 (low relative to material 202 and layer 212) is formed over the higher refractive index material 212 and 202 and exposed portions of the insulating layer 190. The dash lines in FIG. 36 illustrate the border between the high refractive index materials 202 and 212. This designation is used to identify that both are made of the same material but are formed at different times.
[0127] Processing is continued to form a substantially completed integrated circuit as illustrated in FIG. 37. A passivation layer 220 is then formed over the optical laser 180 and MOSFET transistor 181. Although not shown, other electrical or optical connections are made to the components within the integrated circuit but are not illustrated in FIG. 37. These interconnects can include other optical waveguides or may include metallic interconnects.
[0128] In other embodiments, other types of lasers can be formed. For example, another type of laser can emit light (photons) horizontally instead of vertically. If light is emitted horizontally, the MOSFET transistor could be formed within the substrate 161, and the optical waveguide would be reconfigured, so that the laser is properly coupled (optically connected) to the transistor. In one specific embodiment, the optical waveguide can include at least a portion of the accommodating buffer layer. Other configurations are possible.
[0129] Clearly, these embodiments of integrated circuits having compound semiconductor portions and Group IV semiconductor portions, are meant to illustrate what can be done and are not intended to be exhaustive of all possibilities or to limit what can be done. There is a multiplicity of other possible combinations and embodiments. For example, the compound semiconductor portion may include light emitting diodes, photodetectors, diodes, or the like, and the Group IV semiconductor can include digital logic, memory arrays, and most structures that can be formed in conventional MOS integrated circuits. By using what is shown and described herein, it is now simpler to integrate devices that work better in compound semiconductor materials with other components that work better in Group IV semiconductor materials. This allows a device to be shrunk, the manufacturing costs to decrease, and yield and reliability to increase.
[0130] Although not illustrated, a monocrystalline Group IV wafer can be used in forming only compound semiconductor electrical components over the wafer. In this manner, the wafer is essentially a “handle” wafer used during the fabrication of the compound semiconductor electrical components within a monocrystalline compound semiconductor layer overlying the wafer. Therefore, electrical components can be formed within III-V or II-VI semiconductor materials over a wafer of at least approximately 200 millimeters in diameter and possibly at least approximately 300 millimeters.
[0131] By the use of this type of substrate, a relatively inexpensive “handle” wafer overcomes the fragile nature of the compound semiconductor wafers by placing them over a relatively more durable and easy to fabricate base material. Therefore, an integrated circuit can be formed such that all electrical components, and particularly all active electronic devices, can be formed within the compound semiconductor material even though the substrate itself may include a Group IV semiconductor material. Fabrication costs for compound semiconductor devices should decrease because larger substrates can be processed more economically and more readily, compared to the relatively smaller and more fragile, conventional compound semiconductor wafers.
[0132] A composite integrated circuit may include components that provide electrical isolation when electrical signals are applied to the composite integrated circuit. The composite integrated circuit may include a pair of optical components, such as an optical source component and an optical detector component. An optical source component may be a light generating semiconductor device, such as an optical laser (e.g., the optical laser illustrated in FIG. 33), a photo emitter, a diode, etc. An optical detector component may be a light-sensitive semiconductor junction device, such as a photodetector, a photodiode, a bipolar junction, a transistor, etc.
[0133] A composite integrated circuit may include processing circuitry that is formed at least partly in the Group IV semiconductor portion of the composite integrated circuit. The processing circuitry is configured to communicate with circuitry external to the composite integrated circuit. The processing circuitry may be electronic circuitry, such as a microprocessor, RAM, logic device, decoder, etc.
[0134] For the processing circuitry to communicate with external electronic circuitry, the composite integrated circuit may be provided with electrical signal connections to the external electronic circuitry. The composite integrated circuit may also have internal optical communications connections for connecting the processing circuitry in the composite integrated circuit to the electrical connections with the external circuitry. Optical components in the composite integrated circuit may provide the optical communications connections which may electrically isolate the electrical signals in the communications connections from the processing circuitry. Together, the electrical and optical communications connections may be for communicating information, such as data, control, timing, etc.
[0135] A pair of optical components (an optical source component and an optical detector component) in the composite integrated circuit may be configured to pass information. Information that is received or transmitted between the optical pair may be from or for the electrical communications connection between the processing circuitry and the external circuitry while providing electrical isolation for the processing circuitry. If desired, a plurality of optical component pairs may be included in the composite integrated circuit for providing a plurality of communications connections and for providing isolation. For example, a composite integrated circuit receiving a plurality of data bits may include a pair of optical components for communication of each data bit.
[0136] In operation, for example, an optical source component in a pair of components may be configured to generate light (e.g., photons) based on receiving electrical signals from an electrical signal connection with the external circuitry. An optical detector component in the pair of components may be optically connected to the source component to generate electrical signals based on detecting light generated by the optical source component. Information that is communicated between the source and detector components may be digital or analog.
[0137] If desired the reverse of this configuration may be used. An optical source component that is responsive to the on-board processing circuitry may be coupled to an optical detector component to have the optical source component generate an electrical signal for use in communications with external circuitry. A plurality of such optical component pair structures may be used for providing two-way connections. In some applications where synchronization is desired, a first pair of optical components may be coupled to provide data communications and a second pair may be coupled for communications synchronization information.
[0138] For clarity and brevity, optical detector components that are discussed below are discussed primarily in the context of optical detector components that have been formed in a compound semiconductor portion of a composite integrated circuit. In application, the optical detector component may be formed in many suitable ways (e.g., formed from silicon, etc.).
[0139] A composite integrated circuit will typically have an electric connection for a power supply and a ground connection. The power and ground connections are in addition to the communications connections that are discussed above. Processing circuitry in a composite integrated circuit may include electrically isolated communications connections and include electrical connections for power and ground. In most known applications, power supply and ground connections are usually well-protected by circuitry to prevent harmful external signals from reaching the composite integrated circuit. A communications ground may be isolated from the ground signal in communications connections that use a ground communications signal.
[0140] In another embodiment of the present invention, GaAs RF switches and support circuitry for GaAs RF switches are integrated into one composite semiconductor structure. FIG. 38 shows a typical wireless communications system 3800 which uses GaAs RF switch 3804 to switch antenna 3802 from transmitter section 3806 to receiver section 3808, and vice-versa. GaAs RF switches are often used instead of other technology because they exhibit lower parasitic capacitances as well as low ON resistance due to the semi-insulating nature of gallium arsenide. In addition, GaAs RF switches have high switching speeds due to the inherent speed of the charge carriers.
[0141] However, GaAs RF switches are often depletion-type GaAs devices which require support circuitry to generate a negative gate-source voltage in order to turn off the switch. FIG. 39 shows an electrical block diagram of a GaAs RF switch 3955 with non-compound semiconductor based support circuitry which may include a negative gate-source voltage generator 3960 such as a DC-DC converter or a capacitive charge pump. In addition, support circuitry may include drain current protection circuit 3965 that keeps drain current from flowing before the gate-source threshold voltages of GaAs transistors have been reached.
[0142] FIG. 40 shows an electrical schematic of a typical GaAs FET support circuit 4000. The GaAs support circuit 4000 also includes GaAs FET 3910 which requires negative bias at node 3918, as well as a drain current protection circuit that includes silicon transistor 3906 that includes capacitor 3904 and inductor 3908. In one embodiment of the present invention, both GaAs FET 3910 and silicon transistor 3906 can be implemented in one composite semiconductor structure.
[0143] Self-biasing arrangements, such as those incorporating source resistance, are not practical in GaAs RF switches because the source resistance has to be bypassed with capacitors which add noise to the switches. An electrical schematic of a typical self-biasing GaAs FET circuit 4100 (as used, for example, in an amplifier or mixer) is shown in FIG. 41. GaAs FET circuit 4100 includes source resistor 4006 which allows source voltage to be raised above gate voltage in order to provide a negative gate-source voltage when current flows from drain to source of GaAs FET 4010. As illustrated in FIG. 41, bypass capacitors 4008, 4014, and 4012 are preferably included in circuit 4100, along with inductor/chokes 4004 and 4002.
[0144] Other parts of wireless communications systems 3800 can also be integrated into composite semiconductor structures. Receiver section 3808 of wireless communications systems 3800 can recover discernible RF signals from received signals which can be corrupted by factors such as interference and noise. LNA (low noise amplifier) 3810 stage, mixer 3820 stage, and mixer 3822 stage of wireless communications system 3800 often incorporate depletion type GaAs FETs which require negative gate-source generation and drain current protection. Although self-biasing arrangements can be used which are similar to the arrangement shown in FIG. 41, these arrangements add additional components in the form of bypass capacitors and source resistors.
[0145] In accordance with one embodiment of the present invention, negative gate bias generation circuits and drain current protection circuits can be implemented in silicon transistors and be incorporated with the GaAs FETs into a composite semiconductor structure such that LNA 3810, mixer 3820, or mixer 3822, or combinations of them, can be one monolithic semiconductor structure. As illustrated by an electrical block diagram in FIG. 42, LNA 4210 can be integrated with non-compound semiconductor based support circuitry such as negative gate-source voltage generator 4215 and current protection circuit 4220 that keep drain current from flowing before the gate-source threshold voltages of GaAs transistors have been reached. Similarly, mixers 3820 and 3822 can be incorporated with non-compound semiconductor based support circuitry such as negative gate-source voltage generation circuitry and current protection circuitry.
[0146] Generally, self-biasing arrangements are not practical for higher power circuits such as PA (power amplifier) 3812 in FIG. 38 due to reasons such as short battery life and heat generation. In addition, when PA 3812 is implemented with GaAs FETs, those GaAs FETs preferably have their sources connected to ground for reliable and stable amplification. Therefore, negative bias generation circuits and drain current protection circuits may be required for those GaAs FETs in PA 3812. In one embodiment of the present invention, PA 3812 can be implemented in a composite semiconductor structure that integrates GaAs FETs and non-compound semiconductor transistors.
[0147] Constant envelope transmitters, i.e., transmitters that utilize only FM (frequency modulated) signals can generally be implemented in efficient class C PAs. If a CDMA (code division multiple access) standard is used, additional constraints are placed on PA 3812 because the resulting RF signals must exhibit amplitude modulation. Therefore, linear amplification techniques have been developed in order to provide sufficiently linear and yet efficient PAs. One linear amplification technique is to modulate the PA supply current, such that the supply current tracks the non-constant amplitude. One method of supply current modulation uses DC-DC converters. As with negative bias generation circuitry, DC-DC converters are often implemented in silicon transistors. In one embodiment of the invention, the DC-DC converters are incorporated onto one composite semiconductor structure with GaAs FETs such that PA 3812 can be integrated into one monolithic structure. As illustrated by the electrical block diagram in FIG. 43, PA device 3810 can be integrated with non-compound semiconductor based support circuitry such as supply current modulation circuitry 4315, drain current protection circuit 4320, and negative gate-source voltage generator 4325.
[0148] Building DC-DC converters also involves using a supply switch that is connected to a power supply. Such switches are often constructed with GaAs transistors as GaAs transistors exhibit low parasitic capacitance and low ON resistance. In one embodiment of the present invention shown by the electrical schematic in FIG. 44, a GaAs supply switch 4410 is integrated with DC-DC converter circuitry 4420 fabricated from non-compound semiconductor transistors in a composite semiconductor structure such that the resulting circuitry is one monolithic structure.
[0149] As used herein, the terms “comprises,” “comprising,” or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but may also include other elements not expressly listed or inherent to such process, method, article, or apparatus.
[0150] Thus, wireless communication systems that use GaAs transistors as well as silicon transistors are provided that can be integrated into one composite semiconductor structure. One skilled in the art will appreciate that the present invention can be practiced by other than the described embodiments, which are presented for purposes of illustration and not of limitation, and the present invention is limited only by the claims which follow.
Claims
We claim:
1. A composite semiconductor structure comprising:
a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material; and
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material further comprises circuitry for switching an RF signal between at least two alternative paths of a communications system.
2. The composite semiconductor structure defined in claim 1, wherein the circuitry is an antenna switch that couples an antenna of the communications system to one of a receiver section or transmitter section of the communications system.
3. The composite semiconductor structure defined in claim 1, wherein the compound semiconductor layer further comprises at least one gallium arsenide transistor.
4. The composite semiconductor structure defined in claim 3, wherein the non-compound semiconductor substrate further comprises support circuitry for the gallium arsenide transistor.
5. The composite semiconductor structure defined in claim 4, wherein the support circuitry further comprises at least one negative voltage generation circuit.
6. The composite semiconductor structure defined in claim 4, wherein the support circuitry further comprises at least one drain current protection circuit.
7. A composite semiconductor structure comprising:
a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material; and
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material further comprises circuitry for amplifying an input signal received from an antenna of a communications system.
8. The composite semiconductor structure defined in claim 7, wherein the circuitry for amplifying is a low noise amplifier.
9. The composite semiconductor structure defined in claim 7, wherein the monocrystalline compound semiconductor material layer further comprises at least one gallium arsenide transistor.
10. The composite semiconductor structure defined in claim 9, wherein the monocrystalline compound semiconductor material further comprises support circuitry for the gallium arsenide transistor.
11. The composite semiconductor structure defined in claim 10, wherein the support circuitry further comprises at least one negative voltage generation circuit.
12. The composite semiconductor structure defined in claim 10, wherein the support circuitry farther comprises at least one drain current protection circuit.
13. A composite semiconductor structure comprising:
a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material; and
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material further comprises circuitry for amplifying a signal to be output to an antenna of a communications system.
14. The composite semiconductor structure defined in claim 13, wherein the circuitry for amplifying the signal is a power amplifier.
15. The composite semiconductor structure defined in claim 13, wherein the integrated circuit further comprises at least one gallium arsenide transistor.
16. The composite semiconductor structure defined in claim 15, wherein the monocrystalline silicon substrate further comprises support circuitry for the gallium arsenide transistor.
17. The composite semiconductor structure defined in claim 16, wherein the support circuitry further comprises at least one negative voltage generation circuit.
18. The composite semiconductor structure defined in claim 16, wherein the support circuitry farther comprises at least one drain current protection circuit.
19. The composite semiconductor structure defined in claim 16, wherein the support circuitry further comprises circuitry for controlling supply current to the circuitry for amplifying a signal to be output to an antenna of a communications system such that the supply current tracks amplitude of the signal.
20. The composite semiconductor structure defined in claim 19, wherein the circuitry for controlling supply current further comprises at least one DC-DC conversion circuit.
21. A method for switching an RF signal from one path of a communications system to another path of the communications system with a composite semiconductor structure, comprising:
providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and
switching the RF signal between at least two alternative paths of the communications system within the compound semiconductor layer.
22. The composite semiconductor structure defined in claim 1, wherein the circuitry is an antenna switch that couples an antenna of the communications system to one of a receiver section or transmitter section of the communications system.
23. The method defined in claim 21, wherein the monocrystalline compound semiconductor layer further comprises at least one gallium arsenide transistor.
24. The method defined in claim 23, wherein the monocrystalline silicon substrate further comprises support circuitry for the gallium arsenide transistor.
25. The method defined in claim 23, wherein the support circuitry further comprises at least one negative voltage generation circuit.
26. The method defined in claim 25, wherein the support circuitry further comprises at least one drain current protection circuit.
27. A method for amplifying an input signal receiver from an antenna of a communications system with a composite semiconductor structure, comprising:
providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and
amplifying an input signal received from the antenna of the communications system within the compound semiconductor layer.
28. The method defined in claim 27, further comprising amplifying the input signal to be received from the antenna of the communications system with a low noise amplifier.
29. The method defined in claim 28, wherein the monocrystalline compound semiconductor layer further comprises at least one gallium arsenide transistor.
30. The method defined in claim 29, wherein the monocrystalline compound semiconductor layer further comprises support circuitry for the gallium arsenide transistor.
31. The method defined in claim 30, wherein the support circuitry further comprises at least one negative voltage generation circuit.
32. The method defined in claim 30, wherein the support circuitry further comprises at least one drain current protection circuit.
33. A method for amplifying a signal to be output to an antenna of a communications system with a composite semiconductor structure, comprising:
providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and
amplifying a signal to be transmitted from the antenna of the communications system within the compound semiconductor layer.
34. The method defined in claim 33 further comprising amplifying the signal with a power amplifier.
35. The method defined in claim 34, wherein the integrated circuit further comprises at least one gallium arsenide transistor.
36. The method defined in claim 35, wherein the monocrystalline silicon substrate substrate further comprises support circuitry for the gallium arsenide transistor.
37. The method defined in claim 36, wherein the support circuitry further comprises at least one negative voltage generation circuit.
38. The method defined in claim 37, wherein the support circuitry further comprises at least one drain current protection circuit.
39. The method defined in claim 38, wherein the support circuitry further comprises circuitry for controlling supply current to the circuitry for amplifying a signal to be output to an antenna of a communications system such that the supply current tracks amplitude of the signal.
40. The method defined in claim 39, wherein circuitry for controlling supply current further comprises at least one DC-DC conversion circuit.
Patent Citations (154)
| Patent | Date | Inventor | Cited By |
|---|---|---|---|
| US3766370(A) | 1973-10-01 | Walther | Applicant |
| US3802967(A) | 1974-04-01 | Ladany et al. | Applicant |
| US4006989(A) | 1977-02-01 | Andringa | Applicant |
| US4174422(A) | 1979-11-01 | Matthews et al. | Applicant |
| US4284329(A) | 1981-08-01 | Smith et al. | Applicant |
| US4404265(A) | 1983-09-01 | Manasevit | Applicant |
| US4482906(A) | 1984-11-01 | Hovel et al. | Applicant |
| US4484332(A) | 1984-11-01 | Hawrylo | Applicant |
| US4523211(A) | 1985-06-01 | Morimoto et al. | Applicant |
| US4661176(A) | 1987-04-01 | Manasevit | Applicant |
| US4777613(A) | 1988-10-01 | Shahan et al. | Applicant |
| US4793872(A) | 1988-12-01 | Meunier et al. | Applicant |
| US4802182(A) | 1989-01-01 | Thornton et al. | Applicant |
| US4815084(A) | 1989-03-01 | Scifres et al. | Applicant |
| US4846926(A) | 1989-07-01 | Kay et al. | Applicant |
| US4855249(A) | 1989-08-01 | Akasaki et al. | Applicant |
| US4876219(A) | 1989-10-01 | Eshita et al. | Applicant |
| US4882300(A) | 1989-11-01 | Inoue et al. | Applicant |
| US4891091(A) | 1990-01-01 | Shastry | Applicant |
| US4896194(A) | 1990-01-01 | Suzuki | Applicant |
| US4912087(A) | 1990-03-01 | Aslam et al. | Applicant |
| US4928154(A) | 1990-05-01 | Umeno et al. | Applicant |
| US4963508(A) | 1990-10-01 | Umeno et al. | Applicant |
| US4963949(A) | 1990-10-01 | Wanlass et al. | Applicant |
| US4999842(A) | 1991-03-01 | Huang et al. | Applicant |
| US5060031(A) | 1991-10-01 | Abrokwah et al. | Applicant |
| US5063166(A) | 1991-11-01 | Mooney et al. | Applicant |
| US5081062(A) | 1992-01-01 | Vasudev et al. | Applicant |
| US5116461(A) | 1992-05-01 | Lebby et al. | Applicant |
| US5127067(A) | 1992-06-01 | Delcoco et al. | Applicant |
| US5141894(A) | 1992-08-01 | Bisaro et al. | Applicant |
| US5144409(A) | 1992-09-01 | Ma | Applicant |
| US5155658(A) | 1992-10-01 | Inam et al. | Applicant |
| US5159413(A) | 1992-10-01 | Calviello et al. | Applicant |
| US5173474(A) | 1992-12-01 | Connell et al. | Applicant |
| US5221367(A) | 1993-06-01 | Chisholm et al. | Applicant |
| US5225031(A) | 1993-07-01 | McKee et al. | Applicant |
| US5248564(A) | 1993-09-01 | Ramesh | Applicant |
| US5260394(A) | 1993-11-01 | Tazaki et al. | Applicant |
| US5270298(A) | 1993-12-01 | Ramesh | Applicant |
| US5286985(A) | 1994-02-01 | Taddiken | Applicant |
| US5293050(A) | 1994-03-01 | Chapple-Sokol et al. | Applicant |
| US5310707(A) | 1994-05-01 | Oishi et al. | Applicant |
| US5326721(A) | 1994-07-01 | Summerfelt | Applicant |
| US5356831(A) | 1994-10-01 | Calviello et al. | Applicant |
| US5358925(A) | 1994-10-01 | Connell et al. | Applicant |
| US5391515(A) | 1995-02-01 | Kao et al. | Applicant |
| US5393352(A) | 1995-02-01 | Summerfelt | Applicant |
| US5404581(A) | 1995-04-01 | Honjo | Applicant |
| US5418216(A) | 1995-05-01 | Fork | Applicant |
| US5418389(A) | 1995-05-01 | Watanabe | Applicant |
| US5436759(A) | 1995-07-01 | Dijaii et al. | Applicant |
| US5442191(A) | 1995-08-01 | Ma | Applicant |
| US5444016(A) | 1995-08-01 | Abrokwah et al. | Applicant |
| US5450812(A) | 1995-09-01 | McKee et al. | Applicant |
| US5478653(A) | 1995-12-01 | Guenzer | Applicant |
| US5480829(A) | 1996-01-01 | Abrokwah et al. | Applicant |
| US5482003(A) | 1996-01-01 | McKee et al. | Applicant |
| US5512773(A) | 1996-04-01 | Wolf et al. | Examiner |
| US5514484(A) | 1996-05-01 | Nashimoto | Examiner |
| US5528414(A) | 1996-06-01 | Oakley | Applicant |
| US5556463(A) | 1996-09-01 | Guenzer | Applicant |
| US5576879(A) | 1996-11-01 | Nashimoto | Applicant |
| US5588995(A) | 1996-12-01 | Sheldon | Applicant |
| US5606184(A) | 1997-02-01 | Abrokwah et al. | Applicant |
| US5614739(A) | 1997-03-01 | Abrokwah et al. | Applicant |
| US5640267(A) | 1997-06-01 | May et al. | Applicant |
| US5670798(A) | 1997-09-01 | Schetzina | Applicant |
| US5674366(A) | 1997-10-01 | Hayashi et al. | Applicant |
| US5729394(A) | 1998-03-01 | Sevier et al. | Applicant |
| US5729641(A) | 1998-03-01 | Chandonnet et al. | Applicant |
| US5731220(A) | 1998-03-01 | Tsu et al. | Applicant |
| US5733641(A) | 1998-03-01 | Fork et al. | Applicant |
| US5735949(A) | 1998-04-01 | Mantl et al. | Applicant |
| US5741724(A) | 1998-04-01 | Ramdani et al. | Applicant |
| US5764676(A) | 1998-06-01 | Paoli et al. | Applicant |
| US5777762(A) | 1998-07-01 | Yamamoto | Applicant |
| US5778018(A) | 1998-07-01 | Yoshikawa et al. | Applicant |
| US5778116(A) | 1998-07-01 | Tomich | Applicant |
| US5790583(A) | 1998-08-01 | Ho | Applicant |
| US5801105(A) | 1998-09-01 | Yano et al. | Applicant |
| US5810923(A) | 1998-09-01 | Yano et al. | Applicant |
| US5825799(A) | 1998-10-01 | Ho et al. | Applicant |
| US5828080(A) | 1998-10-01 | Yano et al. | Applicant |
| US5830270(A) | 1998-11-01 | McKee et al. | Applicant |
| US5857049(A) | 1999-01-01 | Beranek et al. | Applicant |
| US5858814(A) | 1999-01-01 | Goossen et al. | Applicant |
| US5861966(A) | 1999-01-01 | Ortel | Applicant |
| US5874860(A) | 1999-02-01 | Brunel et al. | Applicant |
| US5883996(A) | 1999-03-01 | Knapp et al. | Applicant |
| US5912068(A) | 1999-06-01 | Jia | Applicant |
| US5926496(A) | 1999-07-01 | Ho et al. | Applicant |
| US5937285(A) | 1999-08-01 | Abrokwah et al. | Applicant |
| US5981400(A) | 1999-11-01 | Lo | Applicant |
| US5990495(A) | 1999-11-01 | Ohba | Applicant |
| US5995359(A) | 1999-11-01 | Klee et al. | Applicant |
| US6002375(A) | 1999-12-01 | Corman et al. | Applicant |
| US6008762(A) | 1999-12-01 | Nghiem | Applicant |
| US6020222(A) | 2000-02-01 | Wollesen | Applicant |
| US6045626(A) | 2000-04-01 | Yano et al. | Applicant |
| US6055179(A) | 2000-04-01 | Konagei et al. | Applicant |
| US6058131(A) | 2000-05-01 | Pan | Applicant |
| US6064078(A) | 2000-05-01 | Northrup et al. | Applicant |
| US6064092(A) | 2000-05-01 | Park | Applicant |
| US6096584(A) | 2000-08-01 | Ellis-Monaghan et al. | Applicant |
| US6103008(A) | 2000-08-01 | McKee et al. | Applicant |
| US6107653(A) | 2000-08-01 | Fitzgerald | Applicant |
| US6113690(A) | 2000-09-01 | Yu et al. | Applicant |
| US6114996(A) | 2000-09-01 | Nghiem | Applicant |
| US6121642(A) | 2000-09-01 | Newns | Applicant |
| US6128178(A) | 2000-10-01 | Newns | Applicant |
| US6136666(A) | 2000-10-01 | So | Applicant |
| US6137603(A) | 2000-10-01 | Henmi | Applicant |
| US6143072(A) | 2000-11-01 | McKee et al. | Applicant |
| US6146906(A) | 2000-11-01 | Inoue et al. | Applicant |
| US6173474(B1) | 2001-01-01 | Conrad | Applicant |
| US6174755(B1) | 2001-01-01 | Manning | Applicant |
| US6180252(B1) | 2001-01-01 | Farrell et al. | Applicant |
| US6180486(B1) | 2001-01-01 | Leobandung et al. | Applicant |
| US6184144(B1) | 2001-02-01 | Lo | Applicant |
| US6222654(B1) | 2001-04-01 | Frigo | Applicant |
| EP250171 | 1987-12-01 | Applicant | |
| EP342937 | 1989-11-01 | Applicant | |
| EP455526 | 1991-06-01 | Applicant | |
| EP514018 | 1992-11-01 | Applicant | |
| EP602568 | 1994-06-01 | Applicant | |
| EP607495 | 1994-07-01 | Applicant | |
| EP999600 | 2000-05-01 | Applicant | |
| EP1001468 | 2000-05-01 | Applicant | |
| GB1319311 | 1970-06-01 | Applicant | |
| GB2335792 | 1999-09-01 | Applicant | |
| JP52-88354 | 1977-07-01 | Applicant | |
| JP54-134554 | 1979-10-01 | Applicant | |
| JP55-87424 | 1980-07-01 | Applicant | |
| JP61-108187 | 1986-05-01 | Applicant | |
| JP63-34994 | 1988-02-01 | Applicant | |
| JP63-131104 | 1988-06-01 | Applicant | |
| JP63-198365 | 1988-08-01 | Applicant | |
| JP2-391 | 1990-01-01 | Applicant | |
| JP5-48072 | 1993-02-01 | Applicant | |
| JP5-291299 | 1993-11-01 | Applicant | |
| JP6-232126 | 1994-08-01 | Applicant | |
| JP6-291299 | 1994-10-01 | Applicant | |
| JP6-334168 | 1994-12-01 | Applicant | |
| JP10-321943 | 1998-12-01 | Applicant | |
| JP11-238683 | 1999-08-01 | Applicant | |
| JP11-260835 | 1999-09-01 | Applicant | |
| WOX97/45827 | 1997-12-01 | Applicant | |
| WOX99/14797 | 1999-03-01 | Applicant | |
| WOX99/14804 | 1999-03-01 | Applicant | |
| WOX99/19546 | 1999-04-01 | Applicant | |
| WOX99/63580 | 1999-12-01 | Applicant | |
| WOX00/33363 | 2000-06-01 | Applicant | |
| WOX00/48239 | 2000-08-01 | Applicant |
Non-Patent Literature (91)
- Nakagawara et al., “Effects of Buffer Layers in Epitaxial Growth of SrTiO3 Thin Film on Si(100), J. Appl. Phys., 78 (12), Dec. 15, 1995, pp. 7226-7230.Applicant
- Suzuki et al., “A Proposal of Epitaxial Oxide Thin Film Structures For Future Oxide Electronics,” Materials Science and Engineering B41, (1996), pp. 166-173.Applicant
- W. F. Egelhoff et al., “Optimizing GMR Spin Valves: The Outlook for Improved Properties”, 1998 Int'l Non Volatile Memory Technology Conference, pp. 34-37.Applicant
- Wang et al., “Processing and Performance of Piezoelectric Films”, Univ. Of MD, Wilocoxon Research Col, and Motorola Labs, May 11, 2000.Applicant
- M. Rotter et al., “Nonlinear Acoustoelectric Interactions in GaAs/LiNbO3 Structures”, Applied Physics Letters,vol. 75(7), Aug. 16, 1999, pp. 965-967.Applicant
- K. Sreenivas et al., “Surface Acoustic Wave Propagation on Lead Zirconate Titanate Thin Films,” Appl. Phys. Lett. 52 (9), Feb. 29, 1998, pp. 709-711.Applicant
- M. Rotter et al., “Single Chip Fused Hybrids for Acousto-Electric and Acousto-Optic Applications,” 1997 Applied Physics Letters, vol. 70(16), Apr. 21, 1997, pp. 2097-2099.Applicant
- A. Mansingh et al., “Surface Acoustic Wave Propagation in PZT/YBCO/SrTiO3/YBCO/SrTiO3 and PbTiO3/YBCO/SrTiO3 Epitaxial Heterostructures,” Ferroelectric, vol. 224, pp. 275-282, 1999.Applicant
- S. Mathews et al., “Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures”, Science, vol. 276, Apr. 11, 1997, pp. 238-240.Applicant
- R. Houdre et al., “Properties of GaAs on Si Grown by Molecular Beam Epitaxy,” Solid State and Materials Sciences, vol. 16, Issue 2, 1990, pp. 91-114.Applicant
- S. F. Fang et al., “Gallium Arsenide and Other Compound Semiconductors on Silicon,” J. Appl. Phys., 68(7), Oct. 1, 1990, pp. R31-R58.Applicant
- Carlin et al., “Impact of GaAs Buffer Thickness on Electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Substrates”, Appl. Phys. Letter, vol. 76, No. 14, Apr. 2000, pp. 1884-1886.Applicant
- Ringel et al., “Epitaxial Integration of III-V Materials and Devices with Si Using Graded GeSi Buffers,” 27th International Symposium on Compound Semiconductors, Oct. 2000.Applicant
- Zogg et al., “Progress in Compound-Semiconductor-on-Silicon-Heteroepitaxy with Flouride Buffer layers,” J. Electrochem Soc., vol. 136, No. 3, Mar. 1998, pp. 775-779.Applicant
- Xiong et al., “Oxide Defined GaAs Vertical-Cavity Surface-Emitting Lasers in Si Substrates,” IEEE Photonics Technology Letters, vol. 12, No. 2, Feb. 2000, pp. 110-112.Applicant
- Clem et al., “Investigation of PZT//LSCO//Pt//Aerogel Thin Film Composites for Uncooled Pyroelectric IR Detectors,” Mat. Res. Soc. Symp. Proc., vol. 541, pp. 661-666, 1999.Applicant
- Gunapala et al., “Bound-To-Quasi-Bound Quantum-Well Infrared Photodetectors,” NASA Tech Brief, vol. 22, No. 9, Sep. 1998.Applicant
- Abhay M. Joshi et al., “Monolithic InGaAs-on-silicon Wave Infrared Detector Arrays,” Intn. Society for Optical Engineering, vol. 2999, pp. 211-224, 1996.Applicant
- Bruley et al., “Nanostructure and Chemistry of a (100)MgO/(100) GaAs Interface,” Appl. Phys Lett, 65(5), Aug. 1994, pp. 564-566, 1997.Applicant
- Fork et al., “Epitaxial MgO On Si(001) for Y-Ba-Cu-O Thin Film Growth by Pulsed Laser Deposition,” Appl. Phys Lett., 58(20), May 20, 1991, pp. 2294-2296.Applicant
- Himpsel et al., “Dialectrics on Semiconductors,” Materials Science and Engineering, B1(1988), pp. 9-13.Applicant
- Li et al., “Epitaxial La0.67Sr0.33MnO3 Magnetic Tunnel Junctions,” J. App. Phys. 81(8), Apr. 15, 1997, pp. 5509-5511.Applicant
- O'Donnell et al., “Colossal Magnetoresistance Magnetic Tunnel Junctions Grown by Molecular-Beam Epitaxy,” Appl. Physics Letters, vol. 76, No. 14, Apr. 3, 2000, pp. 1914-1916.Applicant
- Mikami et al., “Formation of Si Epi/MgO-Al2O3Epi./SiO3/Si and Its Epitaxial Film Quality,” Fundamental Research Laboratories and Microelectronics Laboratories, pp. 31-34, 1983.Applicant
- T. Asano et al., “An Epitaxial Si/Insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon,” Thin Solid Films, vol. 93 (1982), pp. 143-150.Applicant
- T. Chikyow et al., “Reaction and Regrowth Control of CeO2 on Si(111) Surface for the Silicon-On-Insulator Structure,” Appl. Phys. Lett., vol. 65, No. 8, 22 Aug. 1994, pp. 1030-1032.Applicant
- J.F. Kang, et al., “Epitaxial Growth of Ceo2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering,” Solid State Communications, vol. 108, No. 4, pp. 225-227, 1998.Applicant
- R.A. Morgan et al., “Vertical-Cavity Surface-Emitting Lasers Come of Age,” SPIE, vol. 2683, pp. 18-29.Applicant
- “Technical Analysis of Qualcomm QCP-800 Portable Cellular Phone (Transmitter Circuitry), ” Talus Corporation, Qualcomm QCP-800 Technical Analysis Report, Dec. 10, 1996, pp. 5-8.Applicant
- Jo-Ey WONG et al.; “AN ELECTROSTATICALLY-ACTUATED MEMS SWITCH FOR POWER APPLICATIONS”; IEEE, 2000; pp. 633-638.Applicant
- T. Mizuno, et al.; “Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology”; IEEE ELECTRON DEVICE LETTERS, vol. 21. No. 5, May 2000; pp. 230-232.Applicant
- F.M. Bufler, et al.; “Strain-dependence of electron transport in bulk Si and deep-submicron MOSFET's'” Computatural Electronics, 2000, Book of Abstracts, IWCE Glasgow 2000, 7th Int'l Workshop on, 2000; pp. 64-65.Applicant
- S.S. Lu, et al.; “Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/AI0.35GA0.65As/In0.2Ga0.8As/GaAs Strained layer structure on (111)B GaAs substrate”; ELECTRONICS LETTERS, 12th Ma 1994, vol. 30, No. 10; pp. 823-825.Applicant
- Kihong KIM, et al.“On-Chip Wireless Internconnection with Integrated Antennas”; 2000 IEEE; pp. 20.2.1-20.3.4.Applicant
- G. Passiopoulos, et al.; “V-Band Single Chip, Direct Carrier BPSK Modulation Transmitter With Integrated Patch Antenna”; 1998 IEEE MTT-S Digest; pp. 305-308.Applicant
- Mau-Chung Frank Chang, et al.; “RF/Wireless Interconnect for Inter-and Intra-Chip Communications”; Proceedings of the IEEE, vol. 89, No. 4, Apr. 2001; pp. 456-466.Applicant
- The Electronics Industry Report; Prismark; 2001; pp. 111-120.Applicant
- J. K. Abrokwah et al.; “A Manufacturable Complementary GaAs Process”; GaAs IC Symposium, IEEE, 1993; pp. 127-130.Applicant
- H. Nagata, “A Preliminary Consideration of the Growth Behaviour of CeO2, SrTiO3 and SrVO3 Films on Si Substrate,” Thin Solid Films, 224, 1993, pp. 1-3.Applicant
- Nagata et al., “Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum,” Jpn. Jour. Appl. Phys., vol. 30, No. 6B, Jun 1991, pp. L1136-L1138.Applicant
- Kado et al., “Heteroepitaxial Growth of SrO Films on Si Substrates,” J. Appl. Phys., 61(6), Mar. 15, 1987, pp. 2398-2400.Applicant
- Ishiwara et al., “Silicon Molecular Beam Epitaxy,” Materials Research Symposium Proceedings, vol. 220, pp. 595-600, Apr. 29-May 3, 1991.Applicant
- J.K. Abrowah, et al.; “A Manufacturable High-Speed Low Power Complementary GaAs Process”; Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 592-594.Applicant
- Leonard J. Brillson; “Stable and Epitaxial Contacts to III-V Compound Semiconductors”; Semiconductors Fundamentals and Technology; Noyles Publications, 1993; pp. 67-150.Applicant
- Jayshri Sabarinathat, et al.; “Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth”; Applied Physics Letters, vol. 78, No. 20, May, 14, 2001; pp. 3024-3026.Applicant
- Philip Ball; “The Next Generation of Optical Fibers”; Technology Review, May 2001; pp. 55-61.Applicant
- John D. Joannopoulos, et al.; “Molding the Flow of Light”; Photonic Crystals; Princeton University Press, 1995.Applicant
- Thomas F. Krauss, et al.; “Photonic crystals in the optical regime -past, present and future”; Progress in Quantum Electronics 23 (1999) 51-96.Applicant
- G.H. Jin, et al.; “PLZT Film Waveguide Mach-Zehnder Electrooptic Modulator”; Journal of Lightwave Technology, vol. 18, No. 6. Jun. 2000; pp. 807-812.Applicant
- D.E. Aspnes, et al.; “Steps on (001) silicon surfaces”; J. Vac. Sci. Technol. B, vol. 15, No. 4, Jul/Aug 1987; pp. 939-944.Applicant
- D.M. Newns, et al.; “Mott transition field effect transsistor”; Applied Physics Letters, vol. 73, No. 6, Aug. 10, 1998; pp. 780-782.Applicant
- Lucent Technologies, Inc. “Arrayed Waveguide Grating Multiplexer/Demultiplexer”; Jan. 2000; 4 pages.Applicant
- H. Shichijo, et al.; “GaAs MESFET and Si CMOS Cointegration and Circuit Techniques”; 1988 IEEE; GaAs IC Symposium -239-242.Applicant
- Hisashi Shichijo, et al.; “Co-Integration of GaAs MESFET and Si CMOS Circuits”; IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988; pp. 444-446.Applicant
- H. Shichijo, et al.; “Monolithic Process for Co-Integration of GaAs and Silicon Circuits”; 1988 IEEE; pp. 778-781.Applicant
- Z.H. Zhu, et al., “Growth of InGaAs multi-quantum wells at 1.3μm wavelength on GaAs compliant substrates”; Applied Physics Letters, vol. 72, No. 20, May 18, 1998; pp. 2598-2600.Applicant
- Kurt Eisenbeiser, et al., “Metamorphic InAIAs/InGaAs Enhancement Mode HEMT's on GaAs Substrates”; IEEE Electron Device Letters, vol. 20, No. 10, Oct. 1999; pp. 507-509.Applicant
- Tomonori Nagashima, et al.; “Three-Terminal Tandem Solar Cells With Back-Contact Type Bottom Cell” Higashfuji Technical Center, Toyota Motor Corporation; 4 pages.Applicant
- James Schellenberg, et al.; “Low-Loss, Planar Monolithic Baluns for K/Ka-Band Applications”; 1999 IEEE MTT-S Digest; pp. 1733-1736.Applicant
- Patent Abstracts of Japan, vol. 012, No. 077, Mar. 10, 1988 & JP 62 216600, Sep. 24, 1987.Applicant
- R.D. Vispute; “High quality optoelectronic grade epitaxial AIN films on α-Al2O3, Si and 6H-SiC by pulsed laser disposition”; Thin Solid Films 299 (1997), pp. 94-103.Applicant
- T. Warren Weeks, et al.; “GaN thin films deposited via organmetallic vapor phase epitaxy on α(6H)-SiC(0001) using high-temperature monocrystalline AIN buffer layers” 320 Applied Physics Letters, vol. 67, No. 3, Jul. 17, 1995, ppl401-403.Applicant
- Z. Yu et al.: “Epitaxial oxide thin films on SI(001)*”; J. Vac. Sci. Technol. B. vol. 18, No. 4, Jul/Aug 2000; pp. 2139-2145.Applicant
- Gentex Corporate Website; “Photoelectric Smoke Detectors -How They Work”; 2001.Applicant
- Jeffrey B. Casady, et al.; “A Hybrid 6H-SiC Temperature Sensor Operational from 25° C ”; IEEE Transactions on Components, Packaging, and Manufacturing Technology -Part A. vol. 19, No. 3, Sep. 1996; pp. 416-422.Applicant
- Ronald W. Waynant, et al.; “Optoelectronic Integrated Circuits”; Electro-Optics Handbook, McGraw-Hill, Inc., 1994; Chapter Twenty Seven.Applicant
- Antonio Mecozzi, et al., “The Roles of Semiconductor Optical Amplifiers in Optical Networks”; Optics & Photonics News; Mar. 2001; pp. 37-42.Applicant
- D.A. Francis, et al.; “A single-chip linear optical amplifier”; OFC, 2001; Mar. 17-22, 2001.Applicant
- Patent Abstracts of Japan, vol. 015, No. 098, Mar. 8, 1991 & JP 02 306680. Dec. 20, 1990.Applicant
- Peter S. Guilfoyle, et al.; “Optoelectronic Architecture for High-Speed Switching and Processing Applications”; 1998 The Photonics Design and Applications Handbook; pp. H-399-H-406.Applicant
- Gerald B. Stringfellow; “Organometallic Vapor-Phase Epitaxy: Theory and Practice”; Departments of Materials Science and Engineering and Electrical Engineering, University of Utah; Academic Press, 1989.Applicant
- M.A. Herman, et al.; “Molecular Beam Epitaxy Fundamentals and Current Status”: Springer-Verlag Berlin Heidelberg, 1989, 1996.Applicant
- “Integration of GaAs on Si Using a Spinal Buffer Layer”, IBM Technical Bulletin, vol. 30, No. 6, Nov. 1987, p. 365.Applicant
- “GainAs Superconducting FET,” IBM Technical Bulletin, vol. 36, No. 8, Aug. 1993, p. 655-656.Applicant
- “Epitaxial 3d Structure Using Mixed Spinels,” IBM Technical Bulletin, vol. 30, No. 3, Aug. 1987, p. 1271.Applicant
- Moon et al., “Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates,” Japan J of Appl, Phys., vol. 33, Mar. 1994, pp. 1472-1477.Applicant
- “Yodo et al., GaAs Heteroepitaxial Growth on Si Substrates with Thin Si Interlayers in situ Annealed at High Temperatures,” 8257b Journal of Vacuum Science & Technology, 1995 May/Jun., vol. 13, No. 3, pp. 1000-1005.Applicant
- Cuomo et al., “Substrate Effect on the Superconductivity of YBa2Cu3O7 Thin Films,”AIP Conference 1988, pp. 141-148.Applicant
- McKee et al., “Crystalline Oxides on Silicon: The First Five Monolayers,” Physical Review Letters, vol. 81, No. 14, Oct. 1998, pp. 3014-3017.Applicant
- McKee et al., “Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide, and Barium Titanate on Silicon,” 1991 American Institute of Physics, pp. 782-784, Aug. 13, 1991.Applicant
- “Tambo et al., Molecular Beam Epitaxy Growth of SrTiO3 Films on Si(100)-2x1 with SrO Buffer Layer,” Jpn. J. Appl. Phys., vol. 37, 1998, pp. 4454-4459.Applicant
- McKee et al., “The MBE Growth and Optical Quality of BaTiO3 and SrTiO3 Thin Films on MgO,” Mat. Res. Soc. Symp. Proc., vol. 341, Apr. 1994, pp. 309-314.Applicant
- McKee et al., “BaSi2 and Thin Film Alkaline Earth Silicides on Silicon,” Appl. Phys. Lett., 63 (20) Nov. 1993, pp. 2818-2820.Applicant
- Brian A. Floyd, et al.; “The projected Power Consumption of a Wireless Clock Distribution System and Comparison to Conventional Distribution Systems”; IEEE, 1999; pp. IITC99-249-IITC99-250.Applicant
- McKee et al., “Surface Structures and the Orthorhombic Transformation of Thin Film BaSi2 on Silicon,” Mat. Res. Soc. Symp. Proc., vol. 221, pp. 131-136.Applicant
- Mori et al., “Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method,” Jpn. J. Apl. Phys., vol. 30, No. 8A, Aug. 1991, pp. L1415-L1417.Applicant
- Moon et al., “Growth of Crystalline SrTiO3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties,” Jpn. J. of Apl. Phys., vol. 33, (1994), pp. 5911-5916.Applicant
- Farrow et al., “Heteroepitaxy of Dissimilar Materials,” Mat. Res. Soc. Symposium Proceedings, vol. 221, pp. 29-34, Apr. 29-May 2, 1991.Applicant
- Ishiwara et al., “Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices,” Mat. Res. Soc., Symposium Proceedings, vol. 116, pp. 369-374, Apr. 5-8, 1988.Applicant
- Douglas B. Chrisey, et al.; Pulsed Laser Deposition of Thin Films; pp. 273-285.Applicant
- B.A. Block, et al; “Photoluminescence properties of Er3-doped BaTiO3 thin films”; Appl. Phys. Lett 65 (1), Jul. 4, 1994, pp. 25-27.Applicant