Optical systems fabricated by printing-based assembly

Patent Citations (223)

Non-Patent Literature (632)

• Search and Examination Report, Corresponding to Singapore Application No. 200904208-6, Mailed Dec. 17, 2010.Applicant
• Abbaschian et al. (Dec. 2005) “High Pressure-High Temperature Growth of Diamond Crystals Using Split Sphere Apparatus,” Diamond Relat. Mater. 14(11-12):1916-1919.Applicant
• Adachi et al. (1983) “Chemical Etching Characteristics of (001)GaAs,” J. Electrochem. Soc. 130:2427-2435.Applicant
• Adachi et al (1982) “Chemical Etching of InGaAsP/InP DH Wafer,” J. Electrochem. Soc. 129:1053-1062.Applicant
• Ago et al. (2006) “Synthesis of Horizontally-Aligned Single-Walled Carbon Nanotubes with Controllable Density on Sapphire Surface and Polarized Raman Spectroscopy,” Chem. Phys. Lett. 421:399-403.Applicant
• Ago et al. (2005) “Aligned Growth of Isolated Single-Walled Carbon Nanotubes Programmed vby Atomic Arrangement of Substrate Surface,” Chem. Phys. Lett. 408:433-438.Applicant
• Ahmed et al. (Web Release Oct. 11, 2005) “Extending the 3ω-Method to the MHz Range for Thermal Conductivity Measurements of Diamond Thin Films,” Diamond Relat. Mater. 15(2-3):389-393.Applicant
• Ahn et al. (Jun. 2006) “High-Speed Mechanically Flexible Single-Crystal Silicon Thin-Film Transistors on Plastic Substrates,” IEEE Electron Dev. Lett. 27(6):460-462.Applicant
• Ahn et al. (2007) “Bendable Integrated Circuits on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon,” Appl. Phys. Lett. 90:213501.Applicant
• Ahn et al. (Dec. 15, 2006) “Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials,” Science 314:1754-1757.Applicant
• Alivisatos et al. (1996) “Semiconductor Clusters, Nanocrystals, and Quantum Dots,” Science 271:933-937.Applicant
• Alivisatos et al. (1998) “From Molecules to Materials: Current Trends and Future Directions,” Adv. Mater. 10:1297-1336.Applicant
• Allen et al. (Feb. 20, 2006) “Nanomaterial Transfer Using Hot Embossing for Flexible Electronic Devices,” Appl. Phys. Lett. 88:083112.Applicant
• Al-Sarawi et al. (Feb. 1998) “A Review of 3-D Packaging Technology,” IEEE Trans. Comp. Packag. Manufac. Technol. B 21(1):2-14.Applicant
• Amano et al. (Feb. 3, 1986) “Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AIN Buffer Layer,” Appl. Phys. Lett. 48(5):353-355.Applicant
• Ambrosy et al. (1996) “Silicon Motherboards for Multichannel Optical Modules,” IEEE Trans. Compon. Pack. A 19:34-40.Applicant
• Andersson et al. (Oct. 16, 2002) “Active Matrix Displays Based on All-Organic Electrochemical Smart Pixels Printed on Paper,” Adv. Mater. 14:1460-1464.Applicant
• Ando et al. (2004) “Self-Aligned Self-Assembly Process for Fabricating Organic Thin-Film Transistors,” Appl. Phys. Lett. 85:1849-1851.Applicant
• Angadi et al. (Web Release Jun. 1, 2006) “Thermal Transport and Grain Boundary Conductance in Ultrananocrystalline Diamond Thin Films,” J. Appl. Phys. 99:114301.Applicant
• Aoki et al. (2003) “Microassembly of Semiconductor Three Dimensional Photonic Crystals,” Nat. Mater. 2:117-121.Applicant
• Arnold et al. (2003) “Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts,” J. Phys. Chem. B 107(3):659-663.Applicant
• Ayón et al. (Jan. 1999) “Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher,” J. Electrochem. Soc. 146(1):339-349.Applicant
• Baca et al. (2008) “Semiconductor Wires and Ribbons for High-Performance Flexible Electronics,” Angew. Chem. Int. Ed. 47:5524-5542.Applicant
• Bechtold et al. (Nov. 9, 2001) “Logic Circuits with Carbon Nanotube Transistors,” Science 294:1317-1320.Applicant
• Bae et al. (Jul. 1, 2002) “Single-Crystalline Gallium Nitride Nanobelts,” Appl. Phys. Lett. 81(1):126-128.Applicant
• Balmer et al. (2005) “Diffusion of Alkanethiols in PDMS and Its Implications on Microcontact Printing (μCP),” Langmuir 21(2):622-632.Applicant
• Banerjee et al. (May 2001) “3-D ICs: A Novel Chip Design for Improving Deep-Submicrometerinterconnect Performance and Systems-on-Chip Integration,” Proc. IEEE 89(5):602-633.Applicant
• Bao et al. (1999) “Printable Organic and Polymeric Semiconducting Materials and Devices,” J. Mater. Chem. 9:1895-1904.Applicant
• Bao et al. (1997) “High-Performance Plastic Transistors Fabricated by Printing Techniques,” Chem. Mater. 9:1299-1301.Applicant
• Barquins, M. (1992) “Adherence, Friction and Wear of Rubber-Like Materials,” Wear 158:87-117.Applicant
• Bates, F.S. (1991) “Polymer-Polymer Phase Behavior,” Science 251:898-905.Applicant
• Battaglia et al. (2003) “Colloidal Two-Dimensional Systems: CdSe Quantum Shells and Wells,” Angew. Chem. Int. Ed. 442:5035-5039.Applicant
• Bauer et al. (2004) “Biological Applications of High Aspect Ratio Nanoparticles,” J. Mater. Chem. 14:517-526.Applicant
• Berg et al. (2003) “Tailored Micropatters Through Weak Polyelectrolyte Stamping,” Langmuir 19:2231-2237.Applicant
• Bernard et al. (1998) “Printing Patterns of Proteins,” Langmuir 14(9):2225-2229.Applicant
• Bett et al. (Aug. 1999) “III-V Compounds for Solar Cell Applications,” Appl. Phys. A. Mater. Sci. 69(2):119-129.Applicant
• Bhunia et al. (2004) “Free-Standing and Vertically Aligned InP Nanowires Grown by Metalorganic Vapor Phase Epitaxy,” Physica E 21:583-587.Applicant
• Bhushan et al. (Nov. 2004) “Multiwalled Carbon Nanotube AFM Probes for Surface Characterization of Micro/Nanostructures,” Microsyst. Technol. 10(8-9):633-639.Applicant
• Bietsch et al. (Oct. 1, 2000) “Conformal Contact and Pattern Stability of Stamps Used for Soft Lithography,” J. Appl. Phys. 88(7):4310-4318.Applicant
• Bishay et al. (2000) “Temperature Coefficient of the Surface Resistivity of Two-Dimensional Island Gold Films,” J. Phys. D. Appl. Phys. 33(18):2218-2222.Applicant
• Blanchet et al. (2003) “Printing Techniques for Plastic Electronics,” J. Imag. Sci. Tech. 47(4):296-303.Applicant
• Blanchet et al. (2003) “Large Area, High Resolution, Dry Printing of Conducting Polymers for Organic Electronics,” Appl. Phys. Lett. 82:463-465.Applicant
• Blazdell et al. (Nov. 1999) “Preparation of Ceramic Inks for Solid Freeforming Using a Continuous Jet Printer,” J. Mat. Syn. Process. 7(6):349-356.Applicant
• Boltau et al. (1998) “Surface-Induced Structure Formation of Polymer Blends on Patterned Substrates,” Nature 391:877-879.Applicant
• Boncheva et al. (Mar. 15, 2005) “Magnetic Self-Assembly of Three-Dimensional Surfaces from Planar Sheets,” Proc. Natl. Acad. Sci. USA 102(11):3924-3929.Applicant
• Boncheva et al. (Mar. 8, 2005) “Templated Self-Assembly: Formation of Folded Structures by Relaxation of Pre-Stressed, Planar Tapes. The Path to Ubiquitous and Low-cost Organic Electronic Appliances on Plastic,” Adv. Mater. 17(5):553-557.Applicant
• Bowden et al. (2001) “Molecule-Mimetic Chemistry and Mesoscale Self-Assembly,” Acc. Chem. Res. 34:231-238.Applicant
• Bowden et al. (1998) “Spontaneous Formation of Ordered Structures in Thin Films of Metals Supported on an Elastomeric Polymer,” Nature 393:146-149.Applicant
• Bowden et al. (1997) “Self Assembly of Mesoscale Objects into Ordered Two-Dimensional Arrays,” Science 276:233-235.Applicant
• Bracher et al. (2009) “Shaped Films of lonotropic Hydrogels Fabricated Using Templates of Patterns Paper,” Adv. Mater. 21:445-450.Applicant
• Bradley et al. (2003) “Flexible Nanotube Electronics,” Nano Lett., vol. 3, No. 10, pp. 1353-1355.Applicant
• Braun et al. (1999) “Electrochemically Grown Photonic Crystals,” Nature 402:603-604.Applicant
• Britton et al. (Web Release Oct. 25, 2005) “Microstructural Defect Characterization of a Si:H Deposited by Low Temperature HW-CVD on Paper Substrates,” Thin Solid Films 501(1-2):79-83.Applicant
• Brown, H.R. (1991) “The Adhesion Between Polymers,” Ann. Rev. Mater. Sci. 21:463-489.Applicant
• Brown et al. (Dec. 19, 2001) “Heterogeneous Materials Integration: Compliant Substrates to Active Device and Materials Packaging,” Mater. Sci. Eng. B 87(3):317-322.Applicant
• Bruschi et al. (2001) “Micromachined Silicon Suspended Wires With Submicrometric Dimensions,” Microelectron. Eng. 57-58:959-965.Applicant
• Buma et al. (2001) “High-Frequency Ultrasound Array Element Using Thermoelastic Expansion in an Elastomeric Film,” Appl. Phys. Lett. 79:548-550.Applicant
• Burdinski et al. (2005) “Single Etch Patterning of Stacked Silver and Molybdenum Alloy Layers on Glass Using Microcontat Wave Printing,” J. Am. Chem. Soc. 127(31):10786-10787.Applicant
• Burdinski, D. (non-dated) “Soft Lithography and Microcontact Wave Printing,” http://www.research.philips.com/technologies/light—dev—microsys/softlitho/index.html , Downloaded May 23, 2007.Applicant
• Burgin et al. (2000) “Large Area Submicrometer Contact Printing Using a Contact Aligner,” Langmuir 16:5371-5375.Applicant
• Burns et al. (2003) “Printing of Polymer Thin-Film Transistors for Active-Matrix-Display Applications,” J. Soc. Inf. Display 11:599-604.Applicant
• Campbell et al. (2000) “Fabrication of Photonic Crystals for the Visible Spectrum by Holographic Lithography,” Nature 404:53-56.Applicant
• Cao et al. (2006) “Highly Bendable,Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Delectrics,” Adv. Mater. 18(3):304-309.Applicant
• Cao et al. (2006) “Transparent flexible organic thin-film transistors that use printed single-walled carbon nanotube electrodes,” Applied Physics Letters 88:113511.Applicant
• Cao et al. (Jul. 24, 2008) “Medium-Scale Carbon Nanotube Thin-Film Integrated Circuits on Flexible Plastic Substrates,” Nature 454:495-500.Applicant
• Carr et al. (1998) “Measurement of Nanomechanical Resonant Structures in Single-Crystal Silicon,” J. Vac. Sci. Technol. B 16:3821-3824.Applicant
• Chadhury et al. (1991) “Direct Measurement of Interfacial Interactions Between Semispherical Lenses and Flat Sheets of Poly(dimethylsiloxane) and their Chemical Derivatives,” Langmuir 7:1013-1025.Applicant
• Chang et al. (1994) “Process Techniques,” “Lithography,” and “Device-Related Physics and Principles,” In; GaAs High-Speed Devices: Physics, Technology and Circuit Application, John Wiley and Sons, New York, pp. 115-278.Applicant
• Chen et al. (2003) “Electronic Paper: Flexible Active-Matrix Electronics Ink Display,” Nature 423:136.Applicant
• Chen et al. (2003) “Characterization of Pd-GaAs Schottly Diodes Prepared by the Electrodes Plating Technique,” Semiconductor. Sci. Technol. 18:620-626.Applicant
• Chen et al. (Mar. 24, 2006) “An Integrated Logic Crcuit Assembled on a Single Carbon Nanotube,” Science 311:1735.Applicant
• Chen et al. (Feb. 27, 2006) “Complementary Carbon Nanotube-Gated Carbon Nanotube Thin-Fim Transistor,” Appl. Phys. Lett. 88:093502.Applicant
• Chen et al. (2005) “The Role of Metal-Nanotube Caontact in the Performance of Carbon Nanotube Field-Effect Transistors,” Nano Lett. 5(7):1497-1502.Applicant
• Chen et al. (Sep. 2004) “Herringbone Buckling Patterns of Compressed Thin Films on Compliant Substrates,” J. Appl. Mech. 71:597-603.Applicant
• Chen et al. (Jun. 2002) Effect of Process Parameters on the Surface Morphology and Mechanical Performance of Silicon Structures After Deep Reactive Ion Etching (DRIE) J. Microelectromech. Syst. 11(3):264-275.Applicant
• Chen et al. (Mar. 2004) “A Family of Herringbone Patterns in Thin Films,” Scr. Mater. 50(6):797-801.Applicant
• Chen et al. (2005) “InGaN Nanorings and Nanodots by Selective Area Epitaxy,” Appl. Phys. Lett. 87:143111.Applicant
• Cheng et al. (2005) “Ink-Jet Printing, Self-Assembled Polyelectrolytes, and Electroless Plating: Low Cost Fabrication of Circuits on a Flexible Substrate at Room Temperature,” Macromol. Rapid Commun. 26:247-264.Applicant
• Childs et al. (2002) “Decal Transfer Microlithography: A New Soft-Lithographic Patterning Method,” J. Am. Chem. Soc. 124:13583-13596.Applicant
• Childs et al. (2005) “Masterless Soft-Lithography: Patterning UV/Ozone-Induced Adhesion on Poly(dimethylsiloxane) Surfaces,” Langmuir 21:10096-10105.Applicant
• Childs et al. (Aug. 14, 2004) “Patterning of Thin-Film Microstructures on Non-Planar Substrate Surfaces Using Decal Transfer Lithography,” Adv. Mater. 16(15):1323-1327.Applicant
• Choi et al. (2007) “Biaxially Stretchable ‘Wavy’ Silicon Nanomembranes,” Nano Lett. 7(6):1655-1663.Applicant
• Choi et al. (Web Release Jan. 25, 2005) “Simple Detachment Patterning of Organic Layers and Its Applications to Organic Light-Emitting Diodes,” Adv. Mater. 17(2):166-171.Applicant
• Chou et al. (2004) “An Orientation-Controlled Pentacene Film Aligned by Photoaligned Polyimide for Organic Thin-Film Transistor Applications,” Adv. Func. Mater. 14:811-815.Applicant
• Chou et al. (Jun. 8, 1999) “Micromachining on (111)-Oriented Silicon,” Sens. Actuators A 75(3):271-277.Applicant
• Chu et al. (2005) “High-Performance Organic Thin-Film Transistors with Metal Oxide/Metal Bilayer Electrode,” Appl. Phys. Lett. 87:193508.Applicant
• Chung et al. (2000) Silicon Nanowire Devices Appl. Phys. Lett. 76(15):2068-2070.Applicant
• Chung et al. (Jul. 1, 2003) “A Study on Formation of Al and Al2O3 on the Porous Paper by DC Magnetron Sputtering,” Surf. Coat. Technol. 171(1-3):65-70.Applicant
• Collins et al. (Apr. 27, 2001) “Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown,” Science 292:706-709.Applicant
• Creagh et al. (2003) “Design and Performance of Inkjet Print Heads for Non-Graphic-Arts Applications,” MRS Bull. 28:807-811.Applicant
• Crone et al. (Feb. 3, 2000) “Large-Scale Complementary Integrated Circuits Based on Organic Transistors,” Nature 403:521-523.Applicant
• Crowder et al. (1998) “Low-Temperature Single-Crystal Si TFTs Fabricated on Si Films Processed via Sequential Lateral Solidification,” IEEE Electron. Dev. Lett. 19:306-308.Applicant
• Cui et al. (2001) “Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species,” Science 293:1289-1292.Applicant
• Dai et al. (2003) “Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation,” Adv. Funct. Mater. 13:9-24.Applicant
• Dai et al. (2002) “Gallium Oxide Nanoribbons and Nanosheets,” J. Phys. Chem. B 106(5):902-904.Applicant
• Davidson et al. (2004) “Supercritical Fluid-Liquid-Solid Synthesis of Gallium Arsenide Nanowires Seeded by Alkanethiol-Stabilized Gold Nanocrystals,” Adv. Mater. 16:646-649.Applicant
• DeBoer et al. (2004) “Organic Single-Crystal Field-Effect Transistors,” Phys. Stat. Sol. 201:1302-1331.Applicant
• Deen et al. (2004) “Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s,” IEEE Trans. Electron Devices 51:1892-1901.Applicant
• de Gans (2004) “Inkjet Printing of Polymers: State of the Art and Future Developments,” Adv. Mater. 16(3):203-213.Applicant
• De Sio et al. (Web Release May 18, 2005) “Electro-Optical Response of a Single-Crystal Diamond Ultraviolet Photoconductor in Transverse Configuration,” Appl. Phys. Lett. 86:213504.Applicant
• Delmerche et al. (1997) “Stability of Molded Polydimethylsiloxane Microstructures,” Adv. Mat. 9:741-746.Applicant
• Deruelle et al. (1995) “Adhesion at the Solid-Elastomer Interface: Influence of Interfacial Chains,” Macromol. 28:7419-7428.Applicant
• Derycke et al. (Sep. 2001) “Carbon Nanotube Inter- and Intramolecular Logic Gates,” Nano Lett. 1(9):453-456.Applicant
• Desai et al. (Feb. 1999) “Nanopore Technology for Biomedical Applications,” Biomed. Microdevices 2(1):11-40.Applicant
• Dick et al. (Jun. 2004) “Synthesis of Branched ‘Nanotrees’ by Controlled Seeding of Multiples Branching Events,” Nat. Mater. 3:380-384.Applicant
• Dimroth et al. (Mar. 2007) “High Efficiency Multijunction Solar Cells,” MRS Bull. 32:230-235.Applicant
• Ding et al. (Oct. 4, 2004) “Self Catalysis and Phase Transformation in the Formation of CdSe Nanosaws,” Adv. Mater. 16(19):1740-1743.Applicant
• Dinsmore et al. (2002) “Colloidosomes: Selectively Permeable Capsules Composed of Colloidal Particles,” Science 298:1006-1009.Applicant
• Divliansky et al. (2003) “Fabrication of Three-Dimensional Polymer Photonic Crystal Structures Using Single Diffraction Element Interference Lithography,” Appl. Phys. Lett. 82(11):1667-1669.Applicant
• Dodabalapur A. (Apr. 2006) “Organic and Polymer Transistors for Electronics,” Mater Today 9(4):24-30.Applicant
• Dodabalapur et al. (1995) “Organic Transistors: Two-Dimensional Transport and Improved Electrical Characteristics,” Science 268:270-271.Applicant
• Duan et al. (2003) “High-performance Thin-Film Transistors Using Semiconductor Nanowires and Nanoribbons,” Nature 425:274-278.Applicant
• Duan et al. (2000) “General Synthesis of Compound Semiconductor Nanowires,” Adv. Mater. 12:298-302.Applicant
• Duan X, (2003) “Semiconductor Nanowires: From Nanoelectronics to Macroelectronics,” Abstract from a presentation given at the 11th Foresight Conference on Molecular Nanotechnology, Oct. 10-20, Burlingame, CA.Applicant
• Duboz et al. (1998) “Transistors and Detectors Based on GaN-Related Materials,” In; Group III Nitride Semiconductor Compounds, Gill, B. ed., Clarendon, Oxford, pp. 343-387.Applicant
• Duesberg et al. (2000) “Polarized Raman Spectroscopy on Isolated Single-Wall Carbon Nanotubes,” Phys. Rev. Lett., vol. 85, No. 25, pp. 5436-5439.Applicant
• Duffy et al. (1998) “Rapid Prototyping of Microfluidic Systems in Poly(dimethylsiloxane),” Anal. Chem. 70:4974-4984.Applicant
• Durkop et al. (2004) “Extraordinary Mobility in Semiconducting Carbon Nanotube,” Nano Lett. 4(1):35-39.Applicant
• Eder et al. (Apr. 5, 2004) “Organic Electronics on Paper,” Appl. Phys. Lett. 84(14):2673-2675.Applicant
• Edrington et al. (2001) “Polymer-Based Photonic Crystals,” Adv. Mater. 13:421-425.Applicant
• Efimenko et al. (Oct. 15, 2002) “Surface Modification of Sylgard-184 Poly(dimethyl Siloxane) Networks by Ultraviolet and Ultraviolet/Ozone Treatment,” J. Colloid Interface Sci. 254(2):306-315.Applicant
• Eftekhari, G. (1993) “Variation in the Effective Richardson Constant of Metal—GaAs and Metal—InP Contacta Due to the Effect of Processing Parameters,” Phys. Status Solid A-Appl. Res. 140:189-194.Applicant
• Ensell, G. (1995) “Free Standing Single-Crystal Silicon Microstructures,” J. Micromech. Microeng. 5:1-4.Applicant
• Examination Report, Corresponding to Singapore Patent Application No. 200608359-6, Completed on Aug. 27, 2008.Applicant
• Examination Report and Response, Corresponding to Malaysian Patent Application No. PI 20062672, Mailed Aug. 28, 2009.Applicant
• Examination Report, Corresponding to Malaysian Patent Application No. PI 20092343, Mailed Jun. 15, 2010.Applicant
• Examination Report, Response and Search Report, Corresponding to Malaysian Patent Application No. PI 20062537, Nov. 20, 2009.Applicant
• Examination Report, Written Opinion and Response, Corresponding to Singapore Patent Application No. 2007/18082-1, Mailed beginning Feb. 26, 2009.Applicant
• Examination Report, Corresponding to European Application No. EP 05 756 327.2, Dated Jan. 20, 2010.Applicant
• Examination Report, Corresponding to Malaysian Patent Publication No. PI 20052553, Mailed Mar. 13, 2009.Applicant
• Faez et al. (1999) “An Elastomeric Conductor Based on Poluaniline Prepared by Mechanical Mixing,” Polymer 40:5497-5503.Applicant
• Feigner et al. (1996) “Flexural Rigidity of Microtubules Measured with the Use of Optical Tweezers,” J. Cell Sci. 109:509-516.Applicant
• Fink et al. (1999) “Block Copolymers as Photonic Bandgap Materials,” J. Lightwave Tech. 17:1963-1969.Applicant
• Flewitt et al. (2005) “Low-Temperature Deposition of Hydrogenated Amorphous Silicon in an Electron Cyclotron Resonance Reactor for Flexible Displays,” Proc. IEEE 93:1364-1373.Applicant
• Folch et al. (1999) “Wafer-Level In-Registry Microstamping,” J. Microelectromech. Syst. 8:85-89.Applicant
• Forment et al. (2004) “Influence of Hydrogen Treatment and Annealing Processes Upon the Schottky Barrier Height of Au/n-GaAs and Ti/n-GaAs Diodes,” Semicond. Sci. Technol. 19:1391-1396.Applicant
• Forrest et al. (2004) “The Path to Ubiquitous and Low-Cost Organic Electronic Appliances on Plastic,” Nature 428:911-918.Applicant
• Fortunato et al. (2005) “Flexible a-Si: H Position-Sensitive Detectors,” Proc. IEEE 93:1281-1286.Applicant
• Fortunato et al. (Sep. 2008) “High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper,” IEEE Electron. Dev. Lett. 29(9):988-990.Applicant
• Freire et al. (1999) “Thermal Stability of Polyethylene Terephthalate (PET): Oligomer Distribution and Formation of Volatiles,” Packag. Technol. Sci. 12:29-36.Applicant
• Freund, L.B. (2000) “The Mechanics of Electronic Materials,” Int. J. Solids Struct. 37:185-196.Applicant
• Friedman et al. (2005) “High-Speed Integrated Nanowire Circuits,” Nature 434:1085-.Applicant
• Fu et al. (Jan. 10, 2003) “Patterning of Diamond Microstructures on Si Substrate by Bulk and Surface Micromachining,” J. Mater. Process. Technol. 132(1-3):73-81.Applicant
• Furneaux et al. (1989) “The Formation of Controlled-Porosity Membranes from Anodically Oxidized Aluminum,” Nature 337:147-149.Applicant
• Gan et al. (2002) “Preparation of Thin-Film Transostros With Chemical Bath Deposited CdSe and CdS Thin Films,” IEEE Trans. Electron. Dev. 49:15-18.Applicant
• Gao et al. (Sep. 9, 2005) “Conversion of Zinc Oxide Nanobelts into Superlattice-Structures Nanohelices,” Science 309:1700-1704.Applicant
• Garcia et al. (2004) “Etchant Anisotropy Controls the Step Bunching Instability in KOH Etching of Silicon,” Phys. Rev. Lett. 93(16):166102.Applicant
• Garnier et al. (1994) “All-Polymer Field-Effect Transistor Realized by Printing Techniques,” Science 265:1684-1686.Applicant
• Geim et al. (Mar. 2007) “The Rise of Graphene,” Nature Mater. 6:183-191.Applicant
• Geissler et al. (Jun. 2003) “Selective Wet-Etching of Microcontact-Printed Cu Substrates with Control Over the Etch Profile,” Microelec. Eng. 67-68:326-332.Applicant
• Geissler et al. (2003) “Fabrication of Metal Nanowires Using Microcontact Printing,” Langmuir 19(15):6301-6311.Applicant
• Gelinck et al. (2004) “Fleible Active-Matrix Displays and Shift Registers Based on Solution-Processed Organic Transistors,” Nat. Mater. 3:106-110.Applicant
• Gelinck et al. (2000) “High-Performance All-Polymer Integrated Circuits,” Appl. Phys. Lett. 77:1487-1489.Applicant
• Georgakilas et al. (2002) “Wafer-Scale Integration of GaAs Optoelectronic Devices with Standard Si Integrated Circuits Using a Low-Temperature Bonding Procedure,” Appl. Phys. Lett. 81:5099-5101.Applicant
• Givargizov, E.I. (1991) “Applications,” in; Oriented Crystallization on Amorphous Substrates, Plenum Press, New York, pp. 341-363.Applicant
• Goetting et al. (1999) “Microcontact Printing of Alkanephosphonic Acids on Aluminum: Pattern Transfer by Wet Chemical Etching,” Langmuir 15:1182-1191.Applicant
• Goldmann et al. (2004) “Hole Mobility in Organic Single Crystals Measured by a “Flip-Crystal” Field-Effect Technique,” J. Appl. Phys. 96:2080-2086.Applicant
• Goldman et al. (1996) “Correlation of Buffer Strain Relaxation Modes with Transport Properties of Two-Dimensional Electron Gases,” J. Apple. Phys. 80:6849-6854.Applicant
• Goldsmith, T.H. (Sep. 1990) “Optimization, Constraint, and History in the Evolution of Eyes,” Quart. Rev. Biol. 65(3):281-322.Applicant
• Gratz et al. (1991) “Atomic Force Microscopy of Atomic-Scale Ledges and Etch Pits Formed During Dissolution of Quartz,” Science, 251:1343-1346.Applicant
• Gray et al. (Dec. 2001) “Screen Printed Organic Thin Film Transistors (OTFTs) on a Flexible Substrate,” Proc. SPIE 4466:89-94.Applicant
• Gray et al. (Mar. 5, 2004) “High-Conductivity Elastomeric Electronics,” Adv. Mater. 16(5):393-397.Applicant
• Grayson, T. (2002) “Curved Focal Plane Wide Field of View Telescope Design,” Proc. SPIE 4849:269-274.Applicant
• Gruen et al. (Mar. 21, 1994) “Fullerenes as Precursors for Diamond Film Growth Without Hydrogen or Oxygen Additions,” Appl. Phys. Lett. 65(12):1502-1504.Applicant
• Gudiksen et al. (Web Release Apr. 18, 2001) “Synthetic Control of the Diameter and Length of Single Crystal Semiconductor Nanowires,” J. Phys. Chem. B 105:4062-4064.Applicant
• Guo et al. (Aug. 19, 2002) “Metal-Insulator-Semiconductor Electrostatics of Carbon Nanotubes,” Appl. Phys. Lett. 81(8):1486-1488.Applicant
• Gur et al. (2005) “Air-Stable All-Inorganic Nanocrystal Solar Cells Processed from Solution,” Science 310:462-465.Applicant
• Gurbuz et al. (Jul. 2005) “Diamond Semiconductor Technology for RF Device Applications.” Solid State Electron. 49(7):1055-1070.Applicant
• Haisma et al. (2002) “Contact Bonding, Including Direct-Bonding in a Historical and Recent Context of Materials Science and Technology, Physics and Chemistry,” Mater. Sci Eng. 37:1-60.Applicant
• Halik et al. (2004) “Low-Voltage Organic Transistors with an Amorphous Molecular Gate Dielectric,” Nature 431:963-966.Applicant
• Hamedi et al. (May 2007) “Towards Woven Logic from Organic Electronic Fibres,” Nat. Mater. 6:357-362.Applicant
• Hamilton et al. (2004) “Field-Effect Mobility of Organic Polymer Thin-Film Transistors,” Chem. Mater. 16:4699-4704.Applicant
• Han et al. (2005) “Template-Free Directional Growth of Single-Walled Carbon Nanotues on a- and r-Plane Sapphire,” J. Am. Chem. Soc. 127:5294-5295.Applicant
• Harada et al. (2001) “Catalytic Amplification of the Soft Lithographic Patterning of Si. Nonelectrochemical Orthogonal Fabrication of Photoluminescent Porous Si Pixel Arrays,” J. Am. Chem. Soc. 123:8709-8717.Applicant
• Harkonen et al. (Jun. 8, 2006) “4 W Single-Transverse Mode VECSEL Utilizing Intra-Cavity Diamond Heat Spreader,” Electron Lett. 42(12):693-694.Applicant
• He et al. (2005) “Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication,” Adv. Mater. 17:2098-2102.Applicant
• Heffelfinger et al. (1997) “Steps and the structure of the (0001) α-alumina surface,” Surf. Sci., 370:L168-L172.Applicant
• Hillbrog et al. (Web Release Dec. 30, 2003) “Nanoscale Hydrophobic Recovery: A Chemical Force Microscopy Study of UV/Ozone-Treated Cross-Linker Poly(dimethylsiloxane),” Langmuir 20(3):785-794.Applicant
• Hines et al. (2005) “Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates,” Appl. Phys. Lett. 86:163101.Applicant
• Holmes et al. (Feb. 25, 2000) “Control of Thickness and Orientation of Solution-Grown Silicon Nanowires,” Science 287:1471-1473.Applicant
• Horn et al. (1992) “Contact Electrification and Adhesion Between Dissimilar Materials,” Science 256:362-364.Applicant
• Hoyer, P. (1996) “Semiconductor Nanotube Formation by a Two-Step Template Process,” Adv. Mater. 8:857-859.Applicant
• Hsia et al. (2005) “Collapse of Stamps for Soft Lithography Due to Interfacial Adhesion,” Appl. Phys. Lett. 86:154106.Applicant
• Hsu et al. (2002) “Amorphous Si TFTs on Plastically Deformed Spherical Domes,” J. Non-Crystalline Solids 299-302:1355-1359.Applicant
• Hsu et al. (Mar. 2004) “Effects of Mechanical Strain on TFT's on Spherical Domes,” IEEE Trans. Electron Dev. 51(3):371-377.Applicant
• Hsu et al. (2003) “Nature of Electrical Contacts in a Metal—Molecule—Semiconductor System,” J. Vac. Sci. Technol. B 21(4):1928-1935.Applicant
• Hsu et al. (Jan. 15, 2004) “Spherical Deformation of Compliant Substrates with Semiconductor Device Islands,” J. Appl. Phys. 95(2):705-712.Applicant
• Hu et al. (1999) Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes, Acc. Chem. Res. 32:435-445.Applicant
• Hu et al. (1997) “Using Soft Lithography to Fabricate GaAs/AIGaAs Heterostructure Field Effect Transistors,” Appl. Phys. Lett. 71:2020-2022.Applicant
• Hu et al. (2004) “Percolation in Transparent and Conducting Carbon Nanotube Networks,” Nano Lett., vol. 4, No. 12, pp. 2513-2517.Applicant
• Huang et al. (2003) “Growth of Millimeter-Long and Horizontally Aligned Single-Walled Carbon Nanotubes on Flat Substrates,” J. Am. Chem. Soc., 125:5636-5637.Applicant
• Huang et al. (2001) “Directed Assembly of One-Dimensional Nanostructures into Functional Networks,” Science 291:630-633.Applicant
• Huang et al. (2001) “Room-Temperature Ultraviolet Nanowire Nanolasers,” Science 292:1897-1899.Applicant
• Huang et al. (2005) “Nonlinear Analyses of Wrinkles in a Film Bonded to a Compliant Substrate,” J. Mech. Phys. Solids 53:2101-2118.Applicant
• Huang et al. (2005) “Stamp Collapse in Soft Lithography,” Langmuir 21:8058-8068.Applicant
• Huang et al. (2004) “Self-Organizing High-Density Single-Walled Carbon Nanotube Arrays from Surfactant Suspensions,” Nanotechnol. 15:1450-1454.Applicant
• Huang et al. (2005) “Nanomechanical Architecture of Strained Bilayer Thin Films: From Design Principles to Experimental Fabrication,” Adv. Mater. 17(23):2860-2864.Applicant
• Huang et al. (2005) “Nanowires for Integrated Multicolor Nanophotonics,” Small 1(1):142-147.Applicant
• Huang et al. (2004) “Long and Oriented Single-Walled Carbon Nanotubes Grown by Ethanol Chemical Vapor Deposition,” J. Phys. Chem. B. 108:16451-16456.Applicant
• Huang et al. (Jan. 16, 2001) “Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport,” Adv. Mater. 13(2):113-116.Applicant
• Huck et al. (2000) “Ordering of Spontaneously Formed Buckles on Planar Surfaces,” Langmuir 16:3497-3501.Applicant
• Huie, J.C. (2003) “Guided Molecular Self Assembly: A review of Recent Efforts,” Smart Mater. Struct. 12:264-271.Applicant
• Huitema et al. (2001) “Plastic Transistors in Active-Matrix Displays,” Nature 414:599.Applicant
• Hur et al. (205) “Organic Nanodelectrics for Low Voltage Carbon Nanotube Thin Film Transistors and Complementary Logc Gates,” J. Am. Chem. Soc. 127:13808-13809.Applicant
• Hur etal. (Jun. 13, 2005) “Extreme Bendability of Single Walled Carbon Nanotube Networks Transferred From High-Temperature Growth Substrates to Plastic and Their Use in Thin-Film Transistors,” Appl. Phys. Lett. 243502.Applicant
• Hur et al. (2005) “Printed thin-film transistors and complementary logic gates that use polymer-coated single-walled carbon nanotube networks,” J. Appl. Phys., 98, 114302.Applicant
• Hur et al. (Dec. 2004) “Nanotransfer Printing by Use of Noncovalent Surface Forces: Applications to Thin-Film Transistors that Use Single-Walled Carbon Nanotube Networks and Semiconducting Polymers,” Appl. Phys. Lett. 85(23):5730-5732.Applicant
• Hutchinson et al. (1992) “Mixed Mode Cracking in Layered Materials,” Adv. Appl. Mech. 29:63-191.Applicant
• Imparato et al. (2005) “Excimer Laser Induced Crystallization of Amorphous Silicon on Flexible Polymer Substrates,” Thin Solid Films 487:58-62.Applicant
• International Search Report and Written Opinion, Corresponding to International Application No. PCT/US2006/032125, Mailed Mar. 21, 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International Application No. PCT/US2009/058231, Mailed Nov. 17, 2009.Applicant
• International Search Report and Written Opinion, Corresponding to International Application No. PCT/2005/014449, Mailed Jul. 3. 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International PCT Application No. PCT/US05/19354, Dated Apr. 18, 2007.Applicant
• International Search Report and Written Opinion, Corresponding to International PCT Application No. PCT/US2007/079070, Mailed Apr. 23, 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International PCT Application No. PCT/US2007/077759, Mailed Apr. 11, 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International PCT Application No. PCT/US2007/022959, Mailed Oct. 14, 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International PCT Application No. PCT/US2006/021161, Mailed Feb. 28, 2008.Applicant
• International Search Report and Written Opinion, Corresponding to International Application No. PCT/US2009/036192, Mailed Jul. 6, 2009.Applicant
• Isberg et al. (Sep. 6, 2002) “High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond,” Science 297:1670-1672.Applicant
• Islam et al. (Jan. 16, 2003) “High Weight Fraction Surfactant Solubilization of Single-Wall Carbon Nanotubes in Water,” Nano Lett. 3(2):269-273.Applicant
• Ismach et al. (2004) “Atomic-Step-Templated Formation of Single Wall Carbon Nanotube Patters,” Angew. Chem. Int. Ed. 43:6140-6143.Applicant
• Itoh et al. (1991) “Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metaloganic Vapor Phase Epitaxy,” Jap. J. Appl. Phys. 30:1604-1608.Applicant
• Jabbour et al. (2001) “Screen Printing for the Fabrication of Organic Light-Emitting Devices,” IEEE J. Select. Top. Quantum. Electron. 7:769-773.Applicant
• Jackman et al. (Aug. 4, 1995) “Fabrication of Submicrometer Features on Curved Substrates by Microcontact Printing,” Science 269:664-666.Applicant
• Jacobs et al. (2002) “Fabrication of a Cylindrical Display by Patterned Assembly,” Science 296:323-325.Applicant
• Jain et al. (2000) “III-Nitrides: Growth, Characterization, and Properties,” J. Appl. Phys. 87:965-1006.Applicant
• Jain et al. (2005) “Flexible Electronics and Displays: High-Resolution, Roll-to-Roll, Projection Lithography and Photoblation processing Technologies for Hiogh-Throughput Production,” Proc. IEEE 93:1500-1510.Applicant
• James et al. (1998) “Patterned Protein Layers on Solid Substrates by This Stamp Microcontact Printing,” Langmuir 14:742-744.Applicant
• Jang et al. (2006) “Low-Voltage and High-Field-Effect Mobility Organic Transistors with a Polymer Insulator,” Appl. Phys. Lett. 88:072101.Applicant
• Jang et al. (2003) “Lateral Growth of Aligned Multiwalled Carbon Nanotubes Under Electric Fiels,” Solid State Commun. 126:305-308.Applicant
• Javey et al. (Aug. 7, 2003) “Ballistic Carbon Nanotube Field-Effect Transistors,” Nature 424:654-657.Applicant
• Javey et al. (2002) “High-κ Dielectrics for Advanced Carbon-Nanotube Transistors and Logic Gates,” Nature Mater. 1:241-246.Applicant
• Javey et al. (2005) “High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts,” Nano Lett., vol. 5, No. 2, pp. 345-348.Applicant
• Jenkins et al. (1994) “Gallium Arsenide Transistors: Realization Through a Molecularly Designs Insulator,” Science 263:1751-1753.Applicant
• Jeon et al. (2004) “Fabricating Complex Three-Dimensional Nanostructures with High Resolution Conformable Phase Masks,” Proc. Natl. Acad. Sci. USA 101:12428-12433.Applicant
• Jeon et al. (2004) “Three Dimensional Nanofabrication with Arubber Stamps and Conformable Photomasks,” Adv. Mater. 16:593-600.Applicant
• Jeon et al. (1995) “Patterning of Dielectric Oxide Thin Layers by Microcontact Printing of Self-Assembled Monolayers,” J. Mater. Res. 10:2996-2999.Applicant
• Jeon et al. (Aug. 4, 2004) “Three Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks,” Adv. Mater. 16(15):1369-1375.Applicant
• Jiang et a. (Oct. 2, 2007) “Finite Deformation Mechanics in Buckled Thin Films on Compliant Supports,” Proc. Natl. Acad. Sci. USA 104(40):15607-15612.Applicant
• Jiang et al. (1999) “Preparation of Macroporous Metal Films from Colloidal Crystals,” J. Am. Chem. Soc. 121:7957-7958.Applicant
• Jiang et al. (2002) “Polymer-on-Polymer Stamping: Universal Approaches to Chemically Patterned Surfaces,” Langmuir 18:2607-2615.Applicant
• Jin et al. (2004) “Scalable Interconnection and Integration of Nanowire Devices Without Registration,” Nano Lett. 4:915-919.Applicant
• Jin et al. (2004) “Soft Lithographic Fabrication of an Image Sensor Array on a Curved Substrate,” J. Vac. Sci. Technol. B 22(5):2548-2551.Applicant
• Jiyun, C.H. (2003) “Guided Molecular Self-Assembly: A Review of Recent Efforts,” Smart Mater. Struct. 12:264-271.Applicant
• Joachim et al. (Nov. 30, 2000) “Electronics Using Hybrid-Molecular and Mono-Molecular Devices,” Nature 408:541-548.Applicant
• Johnson et al. (1999) “Ordered Mesoporous Polymers of Tunable Pore Size from Colloidal Silica Templates,” Science 283:963-965.Applicant
• Jones et al. (Jul./Aug. 2004) “Stretchable Wavy Metal Interconnects,” J. Vac. Sci. Technol. A 22(4):1723-1725.Applicant
• Joo et al. (2006) “Low-Temperature Solution-Phase Synthesis of Quantum Well Structures CdSe Nanoribbons,” J. Am. Chem. Soc. 128(17):5632-5633.Applicant
• Jortner et al. (2002) “Nanostructured Advanced Materials Perspectives and Directions,” Pure Appl. Chem. 74(9):1491-1506.Applicant
• Joselevich (2002) “Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes,” Nano Lett., vol. 2, No. 10, pp. 1137-1141.Applicant
• Kagan et al. (2001) “Patterning Organic—Inorganic Thin-Film Transistors Using Microcontact Printed Templates,” Appl. Phys Lett. 79(21):3536-3538.Applicant
• Kagan (1999) “Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors,” Science 286:945-947.Applicant
• Kagan et al. (2003) Thin Film Transistors, Dekker, New York, pp. 1-34.Applicant
• Kane et al. (2000) “Analog and Digital Circuits Using Organic Thin-Film Transistors on Polyester Substrates,” IEEE Electron. Dev. Lett. 21:534-536.Applicant
• Kang et al. (Apr. 2007) “High-Performance Electronics Using Dnese, Perfectly aligned Arrays of Single-Walled Carbon Nanotubes,” Nat. Nanotechnol. 2(4):230-236.Applicant
• Kar et al. (2006) “Shape Selective Growth of CdS One-Dimensional Nanostructures by a Thermal Evaporation Process,” J. Phys. Chem. B. 110(10):4542-4547.Applicant
• Kar et al. (2005) “Controlled Synthesis and Photoluminescence Properties of ZnS Nanowires and Nanoribbons,” J. Phys. Chem. B 109(8):3298-3302.Applicant
• Kar et al. (2005) “Synthesis and Optical Properties of CdS Nanoribbons,” J. Phys. Chem B. 109(41):19134-19138.Applicant
• Karnik et al. (2003) “Multiple Lateral Polysilicon Diodes as Temperature Sensors for Chemical Microreaction Systems,” Jpn. J. Appl. Phys. 42:1200-1205.Applicant
• Karnik et al. (2003) “Lateral Polysilicon p30-p-n30 and p30 -n-n30 Diodes,” Solid-State Electronics 47:653-659.Applicant
• Kato et al. (2004) the Characteristic Improvement of Si(111) Metal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing, Jpn. J. Appl. Phys. 43(10):6848-6853.Applicant
• Katz et al. (2001) “Synthetic Chemistry for Ultrapure, Processable, and High-Mobility Organic Transistor Semiconductors,” Acc. Chem. Res. 34:359-369.Applicant
• Katz, H.E. (2004) “Recent Advances in Semiconductor Performance and Printing Processes for Organic Transistor-Based Electronics,” Chem. Mater. 16:4748-4756.Applicant
• Kawata et al. (2001) “Finer Features for Functional Microdevices,” Nature 412:697-698.Applicant
• Kendall, D.L. (1979) “Vertical Etching of Silicon at Very High Apect Ratios,” Ann. Rev. Mater. Sci. 9:373-403.Applicant
• Khakani et al. (2006) “Lateral Growth of Single Wall Carbon Nanotubes on Various Substrates by Means of an ‘All-Laser’ Synthesis Approach,” Diamond Relat. Mater. 15:1064-1069.Applicant
• Khan et al. (1993) “High Electron Mobility Transistor Based on a GaN-AlxGa1-xN Heterojunction,” Appl. Phys. Lett. 63:1214-1215.Applicant
• Khang et al. (2006) “A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substraights,” Science 311:208-212.Applicant
• Kilby, J.S. (1976) “Invention of the Integrated Circuit,” IEEE Trans. Electron. Dev. 23:648-654.Applicant
• Kim et al. (2002) “Nanolithography Based on Patterned Metal Transfer and Its Application to Organic Electronic Devices,” Appl. Phys. Lett. 80:4051-4053.Applicant
• Kim et al. (2003) “Epitaxial Self-Assembly of Block Copolymers on Lithographically Defined Nanopatterned Substrates,” Nature 424:411-414.Applicant
• Kim et al. (2000) “Field Emission from Carbon Nanotubes for Displays,” Diamond and Related Mater. 9(3-6):1184-1189.Applicant
• Kim et al. (2009) “Optimized Structural Designs for Stretchable Silicon Integrated Circuits,” Small 5(24):2841-2847.Applicant
• Kim et al. (Apr. 25, 2008) “Stretchable and Foldable Silicon Integrated Circuits,” Science 320:507-511.Applicant
• Kim et al. (Dec. 2, 2008) “Materials and Noncoplanar Mesh Designs for Integrated Circuits with Linear Elastic Responses to Extreme Mechanical Deformations,” Proc. Natl. Acad. Sci. USA 105(48):18675-18680.Applicant
• Kim et al. (Jan. 2008) “Complementary Logic Gates and Ring Oscillators Plastic Substrates by Use of Printed Ribbons Single-Crystalline Silicon,” IEEE Electron. Dev. Lett. 29(1):73-76.Applicant
• Kim et al. (Nov. 15, 1999) “Direct Observation of Electron Emission Site on Boron-Doped Polycrystalline Diamond Thin Films Using an Ultra-High-Vacuum Scanning Tunneling Microscope,” Appl. Phys. Lett. 75(20):3219-3221.Applicant
• Kim et al. (Oct. 2004) “Organic TFT Array on a Paper Substrate,” IEEE Electron. Dev. Lett. 25(10):702-704.Applicant
• Kim et al. (Web Release Feb. 29, 2008) “Highly Emissive Self-Assembled Organic Nanoparticles Having Dual Color Capacity for Targeted Immunofluorescence Labeling,” Adv. Mater. 20(6):1117-1121.Applicant
• Kim et al. (Web Release Jul. 6, 2009) “Ultrathin Silicon Circuits with Strain-Isolation Layers and Mesh Layouts for High-Performance Electronics on Fabric, Vinyl, Leather and Paper,” Adv. Mater. 21(36):3703-3707.Applicant
• Kim, Y.S. (Web Release Aug, 9, 2005) “Microheater-Integrated Single Gas Sensor Array Chip Fabricated on Flexible Polyimide Substrate,” Sens. Actuators B 114(1):410-417.Applicant
• Klauk et al. (2002) “High-Mobility Polymer Gate Dielectric Pentacene Thin Film Transistors,” J. Appl. Phys. 92:5259-5263.Applicant
• Klein-Wiele et al. (2003) “Fabrication of Periodic Nanostructures by Phase-Controlled Multiple-Beam Interference,” Appl. Phys. Lett. 83(23):4707-4709.Applicant
• Knipp et al. (2003) “Pentacine Thin Film Transistors on Inorganic Dielectrics: Morphology, Structural Properties, and Electronic Transport,” Appl. Phys. Lett. 93:347-355.Applicant
• Ko et al. (2006) “Bulk Quantities of Single-Crystal Silicon Micro-/Nanoribbons Generated from Bulk Wafers,” Nano Lett. 6(10):2318-2324.Applicant
• Ko et al. (Aug. 7, 2008) “A Hemispherical Electronic Eye Camera Based on Compressible Silicon Optoelectronics,” Nature 454:748-753.Applicant
• Ko et al. (Web Release Oct. 28, 2009) “Curvilinear Electronics Formed Using Silicon Membrane Circuits and Elastomeric Transfer Elements,” Small 5(23):2703-2709.Applicant
• Kocabas et al. (2006) “Spatially Selective Guided Growth of High-Coverage Arrays and Random Networks of Single-Walled Carbon Nanotbes and Thir Integration into Electronic Devices,” J. Am. Chem. Soc. 128:4540-4541.Applicant
• Kocabas et al. (2005) “Guided Growth of Large-Scale, Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes and Their Use in Thin-Film Transstors,” Small 1(11):1110-1116.Applicant
• Kocabas et al. (2006) “Large Area Aligned Arrays of SWNTs for High Performance Thin Film Transistors,” American Physical Society, APS March Meeting, Mar. 13-17, Abstract # W31.004.Applicant
• Kocabas et al. (2004) “Aligned Arrays of Single-Walled Carbon Nanotubes Generated from Random Networks by Orientationally Selective Laser Ablation,” Nano Lett., vol. 4, No. 12, pp. 2421-2426.Applicant
• Kocabas et al. (Feb. 5, 2008) “Radio Frequency Analog Electronics Based on Carbon Nanotube Transistors,” Proc. Natl. Acad. Sci. USA 105(5):1405-1409.Applicant
• Kodambaka et al. (2006) “Control of Si Nanowire Growth by Oxygen,” Nano Lett. 6(6):1292-1296.Applicant
• Koide et al. (2000) “Patterned Luminescence of Organic Light-Emitting Diodes by Hot Microcontact Printing (H μCP) of Self-Assembled Monolayers,” J. Am. Chem. Soc. 122:11266-11267.Applicant
• Konagai et al. (1978) “High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology,” J. Cryst. Growth 45:277-280.Applicant
• Kong et al. (2004) “Single-Crystal Nanorings Formed by Epitaxial Self0Coating of Polar Nanobelts,” Science 303:1348-1351.Applicant
• Kong et al. (Jan. 28, 2000) “Nanotube Molecular Wires as Chemical Sensors,” Science 287:622-625.Applicant
• Kong et al. (Oct. 2003) “Structure of Indium Oxide Nanobelts,” Solid State Commun. 128(1):1-4.Applicant
• Kong et al. (Oct. 29, 1998) “Synthesis of Individual Single-Walled Carbon Nonotubes on Patterned Silicon Wafers,” Nature 395:878-881.Applicant
• Kudo et al. (Web Release Jun. 13, 2006) “A Flexible and Wearable Glucose Sensor Based on Functional Polymers with Soft-Mems Techniques,” Biosens. Bioelectron. 22:558-562.Applicant
• Kulkarni et al. (2002) “Mesoscale Organization of Metal Nanocrystals,” Pure Appl. Chem 74(9):1581-1591.Applicant
• Kumar et al. (2002) “Thermally-Stable Low-Resistance Ti/Al/Mo/Au Multilayer Ohmic Contacts on n-GaN,” J. Appl. Phys. 92:1712-1714.Applicant
• Kumar et al. (1994) “Patterning Self-Assembled Monolayers: Applications in Materials Science,” Langmuir 10:1498-1511.Applicant
• Kumar et al. (1993) “Features of Gold Having Micrometer to Centimeter Dimensions can be Formed Through a Combination of Stamping with an Elastomeric Stamp and an Alkanethiol “Ink” Followed by Chemical Etching,” Appl. Phys. Lett. 63(4):2002-2004.Applicant
• Kumar et al. (2005) “Percolating in Finite Nanotube Networks,” Phys. Rev. Lett., 95, 066802.Applicant
• Kuo et al. (1985) “Effect of Mismatch Strain on Band Gap in III-V Semiconductors,” J. Appl. Phys. 57:5428-5432.Applicant
• Kuykendall et al. (Aug. 2004) “Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays,” Nat. Mater. 3:524-528.Applicant
• Lacour et al. (Web Release May 16, 2006) “Mechanisms of Reversible Stretchability of Thin Metal Films on Elastomeric Substrates,” Appl. Phys. Lett. 88:204103.Applicant
• Lacour et al. (Dec. 2004) “An Elastically Stretchable TFT Circuit,” IEEE Electron Dev. Lett. 25(12):792-794.Applicant
• Lacour et al. (Web Release Jul. 14, 2006) “Stiff Subcircuit Islands of Diamondlike Carbon for Stretchable Electronics,” J. Appl. Phys. 100:014913.Applicant
• Lacour et al. (Apr. 2004) “Design and Performance of Thin Metal Film Interconnects for Skin-Like Electronic Circuits,” IEEE Electron. Dev. Lett. 25(4):179-181.Applicant
• Lacour et al. (2005) “Stretchable Interconnects for Elastic Electronic Surfaces,” Proc. IEEE 93:1459-1467.Applicant
• Lacour et al. (Apr. 14, 2003) “Stretchable Gold Conductors on Elastomeric Substrates,” Appl. Phys. Lett. 82(15):2404-.Applicant
• Laimer et al. (Mar. 1997) “Diamond Growth in a Direct-Current Low-Pressure Supersonic Plasmajet,” Diamond Relat. Mater. 6:406-410.Applicant
• Lambacher et al. (2004) “Electrical Imaging of Neuronal Activity by Multi-Transistor-Array (MTA) Recording at 7.8 μm Resolution,” Appl. Phys. A 79:1607-1611.Applicant
• Landes et al. (2002) “Some Properties of Spherical and Rod-Shaped Semiconductor and Metal Nanocrystals,” Pure Appl. Chem. 74(9):1675-1692.Applicant
• Law et al. (2004) “Semiconductor Nanowires and Nanotubes,” Ann. Rev. Mater. Res. 34:83-122.Applicant
• Law et al. (Aug. 27, 2004) “Nanoribbon Waveguides for Subwavelength Photonics Integration,” Science 305:1269-1273.Applicant
• Lay et al. (2004) “Simple Route to Large-Scale Ordered Arrays of Liquid-Deposited Carbon Nanotubes,” Nano Lett., vol. 4, No. 4, pp. 603-606.Applicant
• Leclercq et al. (1998) “III-V Micromachined Devices for Microsystems,” Microelectronics J. 29:613-619.Applicant
• Lecomte et al. (Apr. 2006) “Degradation Mechanism of Diethylene Glycol Units in a Terephthalate Polymer,” Polym. Degrade. Stab. 91(4):681-689.Applicant
• Lee et al. (2004)“Organic Light-Emitting Diodes Formed by Soft Contact Lamination,” Proc. Natl. Acad. Sci. USA 101(2):429-433.Applicant
• Lee et al. (2003) “High-Performance Poly-Si TFTs on Plastic Substrates Using a Nano-Structured Separation Layer Approach,” IEEE Elec. Dev. Lett. 24:19-21.Applicant
• Lee et al. (2000) “Thin Film Transistors for Displays on Plastic Substrates,” Solid State Electron. 44:1431-1434.Applicant
• Lee et al. (2005) “Large-Area, Selective Transfer of Microstructured Silicon (μs-Si): A Printing-Based Approach to High-Performance Thin0Film Transistors Supported on Flexible Substraights,” Adv. Mater. 17:2332-2336.Applicant
• Lee et al. (2005) “A Printable Form of Single-Crystalline Gallium Nitride for Flexable Optoelectronic Systems,” Small 1:1164-1168.Applicant
• Lee et al. (Feb. 2001) “Application of Carbon Nanotubes to Field Emission Displays,” Diamond and Related Mater. 10(2):265-270.Applicant
• Lee et al. (Dec. 1999) “The Surface/Bulk Micromachining (SBM) Process: A New Method For Fabricating Released MEMS in Single Crystal Silicon,” J. Microelectromech. Syst. 8(4):409-416.Applicant
• Lee et al. (2006) “Micron and Submicron Patterning of Polydimethylsiloxane Resists on Electronic Materials by Decal Transfer Lithography and Reactive Ion-Beam Etching: Application to the Fabrication of High-Mobility, Thin-Film Transistors,” Appl. Phys. Lett. 100:084907/1-7.Applicant
• Lee et al. (Apr. 2005) “Fabrication of Stable Metallic Patterns Embedded in Poly(dimethylsiloxane) and Model Applications in Non-Planar Electronic and Lab-on-a-Chip Device Patterning,” Adv. Funct. Mater. 15(4):557-566.Applicant
• Lee et al. (Feb. 2005) “Weave Patterned Organic Transistors on Fiber for E-Textiles,” IEEE Trans. Electron. Dev. 52(2):269-275.Applicant
• Létant et al. (Jun. 2003) “Functionalized Silicon Membranes for Selective Bio-Organisms Capture,” Nat. Mater. 2:391-395.Applicant
• Li et al. (Jul. 1, 2002) “ZnO Nanobelts Grown on Si Substrate,” Appl. Phys. Lett. 81:144-146.Applicant
• Li et al. (2006) “Catalyst-Assisted Formation of Nanocantilever Arrays on ZnS Nanoribbons by Post-Annealing Treatment,” J. Phys. Chem. B 110(13):6759-6762.Applicant
• Li et al. (2004) “Electrospinning of Nanofibers: Reinventing the Wheel,” Adv. Mater. 16(14):1151-1170.Applicant
• Li et al. (2003) “Ultrathin Single-Crystalline-Silicon Cantilever Resonators: Fabrication Technology and Significant Specimen Size effect on Young's Modulus,” Appl. Phys. Lett. 83:3081-3083.Applicant
• Li et al. (2002) “High-Resolution Contact Printing with Dendrimers,” Nano Lett. 2(4):347-349.Applicant
• Li et al. (Dec. 2005) “Compliant Thin Film Patterns of Stiff Materials as Platforms for Stretchable Electronics,” J. Mater. Res. 20(12):3274-3277.Applicant
• Lieber, C. (2001) “The Incredible Shrinking Circuit,” Sci. Am. 285(3):58-64.Applicant
• Lieber, C.M. (2003) “Nanoscale Science and Technology: Building a Bog Future from Small Things,” MRS. Bull. 28:486-.Applicant
• Lieber, C.M. (2003) “Nanoscale Science and Technology: Building a Bog Future from Small Things,” MRS. Bull. 28:486-491.Applicant
• Lim et al. (2005) “Flexible Membrane Pressure Sensor,” Sens. Act. A 119:332-335.Applicant
• Lima et al. (2007) “Creating Micro- and Nanostructures on Tubular and Spherical Surfaces,” J. Vac. Sci. Technol. B 25(6):2412-2418.Applicant
• Lin et al. (Sep. 2005) “High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities,” IEEE Trans. Nano 4(5):481-489.Applicant
• Linder et al. (1994) “Fabrication Technology for Wafer Through-Hole Interconnections and Three-Dimensional Stacks of Chips and Wafers,” Proc. IEEE Micro. Electro Mech. Syst. 349-354.Applicant
• Ling et al. (2004) “Thin Film Deposition, Patterning, and Printing in Organic Thin Film Transistors,” Chem. Mater. 16:4824-4840.Applicant
• Liu et al. (1999) “Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates,” Chem. Phys. Lett., 303:125-129.Applicant
• Long et al. (1990) “Heterostructure FETs and Bipolar Transistors,” In; Gallium Arsenide Digital Integrated Circuit Design, McGraw-Hill, New York, pp. 58-69.Applicant
• Loo et al. (2002) “Additive, Nanoscale Patterning of Metal Films with a Stamp and A Surface Chemistry Mediated Transfer Process: Applications in Plastic Electronics,” Appl. Phys. Lett. 81:562-564.Applicant
• Loo et al. (2002) “Interfacial Chemistries for Nanoscale Transfer Printing,” J. Am. Chem. Soc. 124:7654-7655.Applicant
• Loo et al. (2003) “Electrical Contacts to Molecular Layers by Nanotransfer Printing,” Nano Lett. 3(7):913-917.Applicant
• Loo et al. (2002) “High-Resolution Transfer Printing on GaAs Surfaces Using Alkane Dithiol Monolayers,” J. Vac. Sci. Technol. B 20(6):2853-2856.Applicant
• Loo et al. (2002) “Soft, Conformable Electrical Contacts for Organic Semiconductors: High-Resolution Plastic Circuits by Lamination,” Proc. Natl. Acad. Sci. USA 99(16):10252-10256.Applicant
• Lopes et al. (Sep. 2004) “Thermal Conductivity of PET/(LDPE/AI) Composites Determined by MDSC,” Polym. Test.23(6):637-643.Applicant
• Lu et al. (Dec. 2006) “Electronic Materials-Buckling Down for Flexible Electronics,” Nat. Nanotechnol. 1:163-164.Applicant
• Lu et al. (Nov. 2008) “Nanowire Transistor Performance Limits and Applications,” IEEE Trans Electron Dev. 55(11):2859-2876.Applicant
• Lu et al. (Jul. 19, 2005) “One Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures,” Proc. Nat. Acad. Sci. USA 102(29):10046-10051.Applicant
• Luan et al. (1992) “An Experimental Study of the Source/Drain Parasitic Resistance Effects in Amorphous Silicon Thin Film Transistors,” J. Appl. Phys. 72:766-772.Applicant
• Ma et al. (2004) “Single-Crystal CdSe Nanosaws,” J. Am. Chem. Soc. 126(3):708-709.Applicant
• Mack et al. (2006) “Mechanically Flexible Thin-Film Transistors that Use Ultrathin Ribbons of Silicon Derived from Bulk Wafers,” Appl. Phys. Lett. 88:213101.Applicant
• Madou, M. (1997) “Etch-Stop Techniques,” In; Fundamentals of Microfabrication, CRC Press, New York, pp. 193-199.Applicant
• Maikap et al. (2004) “Mechanically Strained-Si NMOSFETs,” IEEE Electron. Dev. Lett. 25:40-42.Applicant
• Maldovan et al. (2004) “Diamond-Structured Photonic Crystals,” Nature Materials 3:593-600.Applicant
• Mandlik et al. (Aug. 2006) “Fully Elastic Interconnects on Nanopatterned Elastomeric Substrates,” IEEE Electron Dev. Lett. 27(8):650-652.Applicant
• Manna et al. (Web Release May 25, 2003) “Controlled Growth of Tetrapod-Branched Inorganic Nanocrystals,” Nat. Mater. 2:382-385.Applicant
• Markovich et al. (1999) “Architectonic Quantum Dot Solids,” Acc. Chem. Res. 32:415-423.Applicant
• Marquette et al. (2004) “Conducting Elastomer Surface Texturing: A Path to Electrode Spotting Application to the Biochip Production,” Biosens. Bioelectron. 20:197-203.Applicant
• Martensson et al. (2004) “Nanowire Arrays Defined by Nanoimprint Lithography,” Nano Lett. 4:699-702.Applicant
• Martin, C.R. (1995) “Template Synthesis of Electronically Conductive Polymer Nanostructures,”Acc. Chem. Res. 28:61-68.Applicant
• Mas-Torrent et al. (2006) “Large Photoresponsivity in High-Mobility Single-Crystal Organic Field-Effect Phototransistors,” ChemPhysChem 7:86-88.Applicant
• Masuda et al. (2000) “Fabrication of Ordered Diamonds/Metal Nanocomposite Structures,” Chem. Lett. 10:1112-1113.Applicant
• Matsunaga et al. (2003) “An Improved GaAs Device Model for the Simulation of Analog Integrated Circuit,” IEEE Trans. Elect. Dev. 50:1194-1199.Applicant
• McAlpine et al. (2005) “High-Performance Nanowire Electronics and Photonics and Nanoscale Patterning on Flexible Plastic Substrates,” Proc. IEEE 93:1357-1363.Applicant
• McAlpine et al. (2003) “High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates,” Nano Lett. 3:1531-1535.Applicant
• McCaldin et al. (1971) “Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits,” Appl. Phys. Lett. 19:524-517.Applicant
• Meisel et al. (2004) “Three-Dimensional Photonic Crystals by Holographic Lithography Using the Umbrella Configuration: Symmetries and Complete Photonic Band Gaps,” Phys. Rev. B. 70:165101:1-10.Applicant
• Meitl et al. (2006) “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5:33-38.Applicant
• Meitl et al. (2004) “Solution Casting and Transfer Printing Single-Walled Carbon Nanotube Films,” nano Lett. 4:1643-1947.Applicant
• Meitl et al. (Web Release Feb. 22, 2007) “Stress Focusing for Controlled Fracture in Microelectromechanical Systems,” Appl. Phys. Lett. 90:083110.Applicant
• Melosh et al. (2003) “Ultrahigh-Density Nanowire Lattices and Circuits,” Science 300:112-115.Applicant
• Menard et al. (2004) “A Printable Form of Silicon for High Performance Thin Film Transistors on Plastic Substrates,” Appl. Phys. Lett. 84:5398-5400.Applicant
• Menard et al. (2004) “High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics,” Adv. Mat. 16:2097-2101.Applicant
• Menard et al. (2004) “Improved Surface Chemistries, Thin Film Deposition Techniques, and Stamp Designs for Nanotransfer Printing,” Langmuir 20:6871-6878.Applicant
• Menard et al. (2005) “Bendable Single Crystal Silicon Thin Film Transistors Formed by Printing on Plastic Substrates,” Appl. Phys. Lett. 86(093507):1-3.Applicant
• Miao et al. (2003) “Micromachining of Three-Dimensional GaAs Membrane Structures Using High-Energy Nitrogen Implantation,” J. Micromech. Microeng. 13:35-39.Applicant
• Michel et al. (2001) Printing Meets Lithography: Soft Approaches to High-Resolution Patterning, IBM J. Res. Dev. 45:697-719.Applicant
• Miller et al. (2002) “Direct Printing of Polymer Microstructures on Flat and Spherical Surfaces Using a Letterpress Technique,” J. Vac. Sci. Technol. B 20(6):2320-2327.Applicant
• Milliron et al. (2004) “Colloidal Nanocrystal Heterostructures with Linear and Branched Topology,” Nature 430:190-195.Applicant
• Min, G. (Apr. 4, 2003) “Plastic Electronics and Their Packaging Technologies,” Syn. Metals. 135:141-143.Applicant
• Mirkin et al. (2001) “Emerging Methods for Micro- and Nanofabrication,” MRS Bulletin 26(7):506-507.Applicant
• Misewich et al. (May 2, 2003) “Electronically Induced Optical Emission from a Carbon Nanotube FET,” Science 300:783-786.Applicant
• Mishra et al. (2002) “AIGaN/GaN HEMTs-an Overview of Device Operation and Applications,” Proc. IEEE 90:1022-1031.Applicant
• Mitzi et al. (2004) “High-Mobility Ulltrathin Semiconducting Films Prepared by Spin Coating,” Nature 428:299-303.Applicant
• Moon et al. (2002) “Ink-Jet Printing of Binders for Ceramic Components,” J. Am. Ceram. Soc. 85:755-762.Applicant
• Moore et al. (Sep. 9, 2003) “Individually Suspended Single-Walled Carbon Nanotubes in Various Surfactants,” Nano Lett. 3(10):1379-1382.Applicant
• Mori et al. (1978) “A New Etching Solution System, H3PO4-H2O2-H2O, for GaAs and Its Kinetics,” J. Electrochem. Soc. 125:1510-1514.Applicant
• Morales et al. (Jan. 9, 1998) “A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires,” Science 279:208-211.Applicant
• Morent et al. (2007) “Adhesion Enhancement by a Dielectric Barrier Discharge of PDMS used for Flexible and Stretchable Electronics,” J. Phys. D. Appl. Phys. 40:7392-7401.Applicant
• Morkoc et al. (1995) “High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes,” Science 267:51-55.Applicant
• Morkved et al. (1994) “Mesoscopic Self-Assembly of Gold Islands on Diblock-Copolymer Films,” Appl. Phys. Lett. 64:422-424.Applicant
• Morra et al. (1990) “On the Aging of Oxygen Plasma-Treated Polydimthylsiloxane Surfaces,” J. Colloid Interface Sci. 137:11-24.Applicant
• Murakami et al. (2005) “Polarization Dependence of the Optical Absorption of Single-Walled Carbon Nanotubes,” Phys. Rev. Lett., 94, 087402.Applicant
• Namazu et al. (2000) “Evaluation of Size Effect on Mechanical Properties of Single Crystal Silicon by Nanoscale Bending Test Using AFM,” J. MEMS 9:450-459.Applicant
• Nath et al. (2002) “Nanotubes of the Disulfides of Groups 4 and 5 Metals,” Pure Appl. Chem. 74(9):1545-1552.Applicant
• Nathan et al. (2002) “Amorphous Silicon Technology for Large Area Digital X-Ray and Optical Imaging,” Microelectronics Reliability 42:735-746.Applicant
• Nathan et al. (2000) “Amorphous Silicon Detector and Thin Film Transistor Technology for Large-Area Imaging of X-Rays,.” Microelectron J. 31:883-891.Applicant
• Newman et al. (2004) “Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors,” Chem. Mater. 16:4436-4451.Applicant
• Nirmal et al. (1999) “Luminescence Photophysics in Semiconductor Nanocrystals,” Acc. Chem. Res. 32:407-414.Applicant
• Noda et al. (1996) “New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region,” Jpn. J. Appl. Phys. 35:L909-L912.Applicant
• Nomura et al. (2004) “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Oxide Semiconductors,” Nature 432:488-492.Applicant
• Novoselov et al. (Oct. 22, 2004) “Electric Field Effect in Atomically Thin Carbon Films,” Science 306:666-669.Applicant
• O'Connell et al. (Jul. 26, 2002) “Bang Gap Fluorescence from Individual Single-Walled Caarbon Nanotubes,” Science 297:593-596.Applicant
• Odom et al. (2002) “Improved Pattern Transfer in Soft Lithography Using Composite Stamps,” Langmuir 18(13):5314-5320.Applicant
• Office Actions and Responses, Corresponding to U.S. Appl. No. 11/145,542, Mailed between Apr. 5, 2007 and Dec. 23, 2008.Applicant
• Office Action and Response, Corresponding to U.S. Appl. No. 11/423,287, Mailed Feb. 13, 2008.Applicant
• Office Action and Response, Corresponding to U.S. Appl. No. 11/421,654, Mailed Sep. 29, 2009.Applicant
• Office Actions, Corresponding to Chinese Patent Application No. 200580018159.5, Issued Jan. 23, 2009 and Feb. 12, 2010.Applicant
• Office Action and Response, Corresponding to Malaysian Patent Publication No. PI 20052553, Mailed Mar. 13, 2009 and Dec. 8, 2009.Applicant
• Office Action Corresponding to Chinese Patent Application No. 200780049982.1, Issued May 12, 2010.Applicant
• Office Action, Corresponding to Taiwan Patent Application No. 095121212, Issued May 7, 2010.Applicant
• Office Action Corresponding to U.S. Appl. No. 11/851,182, Mailed Apr. 1, 2010.Applicant
• Office Action, Corresponding to Chinese Patent U.S. Appl. No. 200580013574.1, Issued May 11, 2010.Applicant
• Office Action, Corresponding to U.S. Appl. No. 11/981,380, Mailed Sep. 23, 2010.Applicant
• Ohzono et al. (2004) “Ordering of Microwrinkle Patterns by Compressive Strain,” Phys. Rev. B 69(13):132202.Applicant
• Ohzono et al. (Web Release Jul. 7, 2005) “Geometry-Dependent Stripe Rearrangement Processes Induced by Strain on Preordered Microwrinkle Patterns,” Langmuir 21(16):7230-7237.Applicant
• Ong et al. (2004) “High-Performance Semiconducting Poolythiophenes for Organic Thin-Film Transistors,” J. Am. Chem. Soc. 126:3378-3379.Applicant
• Ong et al. (2005) “Design of High-Performance Regioreular Polythiophenes for Organic Thin-Film Transistors,” Proc. IEEE 93:1412-1419.Applicant
• Origin Energy (May 2004) “Fact Sheet—Sliver Cells,” www.orginenergy.com.au/sliver.Applicant
• O'Riordan et al. (2004) “Field Configured Assembly: Programmed Manipulation and Self-Assembly at the Mesoscale,” Nano Lett. 4:761-765.Applicant
• Ouyang et al. (2002) “High-Performance, Flexible Polymer Light-Emitting Diodes Fabricated by a Continuous Polymer Coating Process,” Adv. Mat. 14:915-918.Applicant
• Ouyang et al. (Web Release Mar. 20, 2000) “Conversion of Some Siloxane Polymers to Silicon Oxide by UV/Ozone Photochemical Processes,” Chem. Mater. 12(6):1591-1596.Applicant
• Ouyang et al. (2008) “High Frequency Properties of Electro-Textiles for Wearable Antenna Applications,” IEEE Trans. Antennas Propag. 56(2):381-389.Applicant
• Pan et al. (2001) “Nanobelts of Semiconducting Oxides,” Science 291:1947-1949.Applicant
• Panev et al. (2003) “Sharp Excitation from Single InAs Quantum Dots in GaAs Nanowires,” Appl. Phys. Lett. 83:2238-2240.Applicant
• Pardo et al. (2000) “Application of Screen Printing in the Fabrication of Organic Ligh-Emitting Devices,” Adv. Mater. 12(17):1249-1252.Applicant
• Park et al. (1998) “Fabrication of Three-Dimensional Macroporous Membranes with Assemblies of Microspheres as templates,” Chem. Mater. 10:1745-1747.Applicant
• Park et al. (1997) “Block Copolymer Lithography: Periodic Arrays of ˜1011 Holes in 1 Square Centimeter,” Science 276:1401-1404.Applicant
• Patton et al. (Mar. 1998) “Effect of Diamond like Carbon Coating and Surface Topography on the Performance of Metal Evaporated Magnetic Tapes,” IEEE Trans Magn. 34(2):575-587.Applicant
• Paul et al. (Apr. 2003) “Patterning Spherical Surfaces at the Two Hundred Nanometer Scale Using Soft Lithography,” Adv. Func. Mater. 13(4):259-263.Applicant
• Pearton et al. (1999) “GaN: Processing, Defects, and Devices,” J. Appl. Phys. 86:1-78.Applicant
• Peng et al. (Mar. 2, 2000) “Shape Control of CdSe Nanocrystals,” Nature 404:59-61.Applicant
• Piazza et al. (2005) “Protective Diamond-Like Carbon Coatings for Future Optical Storage Disks,” Diamond Relat. Mater. 14:994-999.Applicant
• Podzorov et al. (2005) “Hall Effect in the Accumulation Layers on the Surface of Orgaic Semiconductors,” Phys. Rev. lett. 95:226601.Applicant
• Pushpa et al. (2002) “Stars and Stripes. Nanoscale Misfit Dislocation Patterns on Surfaces,” Pure Appl. Chem. 74(9):1663-1671.Applicant
• Quake et al (2000) “From Micro- to Nanofabrication with Soft Materials,” Science 290:1536-1540.Applicant
• Radtke et al. (Feb. 5, 2007) “Laser-Lithography on Non-Planar Surfaces,” Opt. Exp. 15(3):1167-1174.Applicant
• Raman et al. (1989) “Study of Mesa Undercuts Produced in GaAs with H3PO4-Based Etchants,” J. Electrochem. Soc. 136:2405-2410.Applicant
• Rao et al. (2003) “Large-scale assembly of carbon nanotubes,” Nature, 425:36-37.Applicant
• Razeghi et al. (1994) “High-Power Laser Diode Based on in GaAsP Alloys,” Nature 369:631-633.Applicant
• Razouk et al. (Sep. 1979) “Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables,” J. Electrochem. Soc. 126(9):1573-1581.Applicant
• Reuss et al. (Jul. 2005) “Macroelectronics: Perspectives on Technology and Applications,” Proc. IEEE 93(7):1239-1256.Applicant
• Reuss et al. (Jun. 2006) “Macroelectronics,” MRS Bull. 31:447-454.Applicant
• Ribas et al. (1998) “Bulk Micromachining Characterization of 1.2 μm HEMT MMIC Technology for GaAs MEMS Design,” Mater. Sci. Eng. B 51:267-273.Applicant
• Ridley et al. (1999) “All-Inorganic Field Effect Transistors Fabricated by Printing,” Science 286:746-749.Applicant
• Roberts et al. (1979) “Looking at Rubber Adhesion,” Rubber Chem. Technol. 52:23-42.Applicant
• Roberts et al. (Mar. 2006) “Elastically Relaxed Free-Standing Strained-Silicon Nanomembranes,” Nat. Mater. 5:388-393.Applicant
• Robinson et al. (1983) “GaAs Readied for High-Speed Microcircuits,” Science 219:275-277.Applicant
• Roelkens et al. (Dec. 2005) “Integration of InP/InGaAsP Photodetectors onto Siliconon-Insulator Waveguide Circuits,” Optics Express 13(25):10102-10108.Applicant
• Rogers et al. (2002) “Paper-Like Electronic Displays: Large-Area Rubber-Stamped Plastic Sheets of Electronics and Microencazpsulated Electrophoretic Inks,” Proc. Nat. Acad. Sci. USA 98:4835-4840.Applicant
• Rogers et al. (1998) “Quantifying Distortions in Soft Lithography,” J. Vac. Sci. Technol. 16:88-97.Applicant
• Rogers et al. (1998) “Generating ˜90 Nanometer Features Using Near Field Contact Mode Photolithography with an Elastomeric Phase Mask,” J. Vac. Sci. Technol. 16(1):59-68.Applicant
• Rogers et al. (1998) “Using Printing and Molding Techniques to Produce Distributed Feedback and Bragg Reflector Resonators for Plastic Lasers,” Appl. Phys. Lett. 73:1766-1768.Applicant
• Rogers, J.A. (2001) “Toward Paperlike Displays,” Science 291:1502-1503.Applicant
• Rogers, J.A. (2001) “Rubber Stamping for Plastic Electronics and Fiber Optics,” MRS Bulletin 26(7):530-534.Applicant
• Rogers et al. (1997) “Using an Elastomeric Phase Mask for Sub-100 nm Photolithography in the Optical Near Field,” Appl. Phys. Lett. 70:2658-2660.Applicant
• Rogers et al. (2002) “Printed Plastic Electronics and Paperlike Displays,” J. Polym. Sci. Part A. Polym. Chem. 40:3327-3334.Applicant
• Rogers et al. (1999) Printing Process Sutable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits, Adv. Mater. 11(9):741-745.Applicant
• Rogers et al. (Mar. 2000) “Organic Smart Pixels and Complementary Inverter Circuits Formed on Plastic Substrates by Casting and Rubber Stamping,” IEEE Electron Dev. Lett. 21(3):100-103.Applicant
• Rosenblatt et al. (2002) “High Performance Electrolyte Gated Carbon Nanotube Transistors,” Nano Lett. 2(8):869-872.Applicant
• Rotkin et al. (2003) “Universal Description of Channel Conductivity for Nanotube and Nanowire Transistors,” Appl. Phys. Lett. 83:1623-1625.Applicant
• Roundy et al. (2003) “Photonic Crystal Structure with Square Symetry within Each Layer and a Three-Dimensional Band Gap,” Appl. Phys Lett. 82:3835-3837.Applicant
• Ruchehoeft et al. (2000) “Optimal Strategy for Controlling Linewidth on Spherical Focal Surface Arrays,” J. Vac. Sci. Technol. B 18(6):3185-3189.Applicant
• Samuelson et al. (2004) “Semiconductor Nanowires for Novel One-Dimensional Devices,” Physica E 21:560-567.Applicant
• Sangwal et al. (1997) “Nature of multilayer steps on the {100} cleavage planes of MgO single crystals,” Surf. Sci., 383:78-87.Applicant
• Sanyal et al. (2002) “Morphology of Nanostructures Materials,” Pure Appl. Chem. 74(9):1553-1570.Applicant
• Sazonov et al. (2005) “Low-Temperature Materials and Thin-Film Transistors for Flexible Electronics,” Proc. IEEE 93:1420-1428.Applicant
• Schermer et al. (Web Release Jan. 19, 2006) “Photon Confinement in High-Efficiency, Thin-Film III-V Solar Cells Obtained by Epitaxial Lift-Off,” Thin Solid Films 511-512:645-653.Applicant
• Schermer et al. (Web Release Apr. 28, 2005) “Thin-Film GaAs Epitaxial Lift-Off Solar Cells for Space Applications,” Prog. Photovoltaics: Res. Applic. 13:587-596.Applicant
• Schlegel et al. (2002) “Structures of quartz (1010)- and (1011)-water interfaces determined by X-ray reflectivity and atomic force microscopy of natural growth surfaces,” Geochim. Cosmochim. Acta, vol. 66, No. 17, pp. 3037-3054.Applicant
• Schmid et al. (Mar. 25, 2000) “Siloxane Polymers for High-Resolution, High-Accuracy Soft Lithography,” Macromolecules 33(8):3042-3049.Applicant
• Schmid et al. (2003) “Preparation of metallic Films on Elastomeric Stamps and Their Application on Contact Processing and Contact Printing,” Adv. Funct. Mater. 13:145-153.Applicant
• Schmidt et al. (Mar. 8, 2001) “Thin Solid Films Roll up into Nanotubes,” Nature 410:168.Applicant
• Schon et al. (1995) “Ambipolar Pentacene Field-Effect Transistors and Inverters,” Science 287:1022-1023.Applicant
• Schrieber et al. (1998) “The Effectiveness of Silane Adhesion Promotors in the Performance of Polyurethane Adhesives,” J. Adhesion 68:31-44.Applicant
• Scnable et al. (1969) “Aluminum Metallization; Advantages and Limitations for Integrated Circuit Applications,” IEEE 57:1570-1580.Applicant
• Schneider et al. (2008) “Mechanical Properties of Silicones for MEMS,” J. Micromech. Microeng. 18:065008.Applicant
• Scorzoni et al. (Oct. 4, 2004) “On the Relationship Between the Temperature coefficient of Resistance and the Thermal Conductance of integrated Metal Resistors,” Sens Actuators A 116(1):137-144.Applicant
• Search Report, Corresponding to Republic of China (Taiwan) Patent Application No. 094118507, Dated Feb. 24, 2007.Applicant
• Search Report Corresponding to Singapore Patent Application No. SG 200607372-0, Mailer Oct. 17, 2007.Applicant
• Search Report Corresponding to Taiwanese Patent Application No. 095121212, Completed Oct. 8, 2010.Applicant
• Search Report and Examination Report Corresponding to Singapore Patent Application No. 200901178-4, Completed Mar. 13, 2010.Applicant
• Seidel et al. (2004) “High-Current Nanotube Transistors,” Nano Lett., vol. 4, No. 5, pp. 831-834.Applicant
• Sekitani et al. (2005) “Bending Experiment on Pentacene Fiield-Effect Transistors on Plastic Films,” Appl. Phys. Lett. 86:073511.Applicant
• Sekitani et al. (Sep. 12, 2008) “A Rubberlike Stretchable Active Matrix Using Elastic Conductors,” Science 321:1468-1472.Applicant
• Sen et al. (2002) “Nonequilibrium Processes for Generating Silicon Nanostructures in Single-Crystalline Silicon,” Pure Appl. Chem. 74(9):1631-1641.Applicant
• Serikawa et al. (May 1, 2000) “High-Mobility Poly-Si Thin Film Transistors Fabricated on Stainless-Steel Foils by Low-Temperature Processes Using Sputter-Depositions,” Jpn. J. Appl. Phys. 39:L393-L395.Applicant
• Servanti et al. (2005) “Functional Pixel Circuits for Elastic AMOLED displays,” Proc. IEEE 93:1257-1264.Applicant
• Service, R.F. (Aug. 15, 2003) “Electronic Textiles Charge Ahead,” Science 301:909-911.Applicant
• Shan et al. (2004) “From Si Source Gas Directly to Positioned, Electrically Contained Si Nanowires: The Self-Assembling ‘Grow-in-Place’ Approach,” Nano Lett. 4(11):2085-2089.Applicant
• Sharp et al. (2003) “Holographic Photonic Crystals with Diamond Symmetry,” Phys. Rev. B 68:205102/1-205102/6.Applicant
• Sheraw et al. (2002) “Organic Thin-Film Transistor-Driven Polymer-Dispersed Liquid Crystal Displays on Flexible Polymeric Substrates,” Appl. Phys. Lett. 80:1088-1090.Applicant
• Shetty et al. (2005) “Formation and Characterization of Silicon Films on Flexible Polymer Substrates,” Mater. Lett. 59:872-875.Applicant
• Shi et al. (2001) “Free-Standing Single Crystal Silicon Nanoribbons,” J. Am. Chem. Soc. 123(44):11095-11096.Applicant
• Shi et al. (Sep. 2000) “Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires,” Adv. Mater. 12(18):1343-1345.Applicant
• Shtein et al. (Oct. 15, 2004) “Direct Mask-Free Patterning of Molecular Organic Semiconductors Using Organic Vapor Jet Printing,” J. Appl. Phys. 96(8):4500-4507.Applicant
• Shull et al. (1998) “Axisymmetric Adhesion Tests of Soft Materials,” Macromol. Chem. Phys. 199:489-511.Applicant
• Siegel et al. (Web Release Feb. 7, 2007) “Microsolidics: Fabrication of Three-Dimensional Metallic Microstructures in Poly(dimethylsiloxane),” Adv. Mater. 19(5):727-733.Applicant
• Sim et al. (1993) “An Analytical Back-Gate Bias Effect Model for Ultrathin SOI CMOS Devices,” IEEE Trans. Elec. Dev. 40:755-765.Applicant
• Sirringhaus et al. (2003) “Inkjet Printing of Functional Materials,” MRS Bull. 28:802-806.Applicant
• Sirringhaus, H. (2005) “Device Physics of Solution-Processed Organic Field-Effect Transistors,” Adv. Mater. 17:2411-2425.Applicant
• Sirringhaus et al. (Dec. 15, 2000) “High-Resolution Inkjet Printing of All-Polymer Transistor Circuits,” Science 290:2123-2126.Applicant
• Smay et al. (2002) “Colloidal Inks for Directed Assembly of 3-D Periodic Structures,” Langmuir 18:5429-5437.Applicant
• Smith et al. (2000) “Electric-Field Assisted Assembly and Alignment of Metallic Nanowires,” Appl. Phys. Lett. 77(9):1399-1401.Applicant
• Snow et al. (2005) “High-mobility carbon-nanotube transistors on a polymeric substrate,” Appl. Phys. Lett., 86, 033105.Applicant
• Snow et al. (2003) “Random networks of carbon nanotubes as an electronic material,” Appl. Phys. Lett., vol. 82, No. 13, pp. 2145-2147.Applicant
• Someya et al. (2005) “Integration of Organic FETs with Organic Photodiodes for a Large Area, Flexible, and Lightweight Sheet Image Scanners,” IEEE Trans. Electron Devices 52:2502-2511.Applicant
• Someya et al. (2005) “Conformable, Flexible, Large-Area Networks of Pressure and Thermal Sensors with Organic Transistor Active Matrixes,” Proc. Nat. Acad. Sci. USA 102:12321-12325.Applicant
• Someya et al. (Jul. 6, 2004) “A Large-Area, Flexible, Pressure Sensor Matric with Organic Field-Effect Transistors for Artificial Skin Applications,” Proc. Nat. Acad. Sci. USA 101(27):9966-9970.Applicant
• Soole et al. (Mar. 1991) “InGaAs Metal-Semiconductor-Metal Photodetectors for Long Wavelength Optical Communications,” IEEE J. Quantum Electron. 27(3):737-752.Applicant
• Srinivasan et al. (Web Release Mar. 26, 2007) “Piezoelectric/Ultrananocrystalline Diamond Heterostructures for High-Performance Multifunctional Micro/Nanoelectromechanical Systems,” Appl. Phys. Lett. 90:134101.Applicant
• Stafford et al. (Aug. 2004) “A Buckling-Based Metrology for Measureing the Elastic Moduli of Polymeric Thin Films,” Nature Mater. 3:545-550.Applicant
• Star et al. (2004) “Nanotube Optoelectric Memory Devices,” Nano Lett., vol. 4, No. 9, pp. 1587-1591.Applicant
• Storm et al. (Aug. 2003) “Fabrication of Solid-State Nanopores with Single-Nanometre Precision,” Nat. Mater. 2:537-540.Applicant
• Streetman et al. (2000) “Intrinsic Material,” In; Solid State Electronic Devices, 5th Ed., Prentice Hall; Upper Saddle River, NJ; pp. 74-75.Applicant
• Strukov et al. (2005) “CMOL FPGA: A Reconfigurable Architecture for Hybrid Digital Circuits with Two-Terminal Nanodevices,” Nanotechnology 16:888-900.Applicant
• Sumant et al. (Apr. 2005) “Toward the Ultimate Tribological Interface: Surface Chemistry and Nanotribology of Ultrananocrystalline Diamond,” Adv. Mater. 17(8):1039-1045.Applicant
• Su et al. (2000) “Lattice-Oriented Growth of Single-Walled Carbon Nanotubes,” J. Phys. Chem. B 104(28):6505-6508.Applicant
• Sun et al. (2004) “Fabricating Semiconductor Nano/Microwires and Transfer Printing Ordered Arrays of Them onto Plastic Substrates,” Nano Lett. 4:1953-1959.Applicant
• Sun et al. (2005) “Photolithographic Route to the Fabrication of Micro/Nanowires of III-V Semiconductors,” Adv. Fuct. Mater. 15:30-40.Applicant
• Sun et al. (2005) “Bendable GaAs Metal-Semiconductor Field-Effect Transistors Formed with a Printed GaAs Wire Arrays on Plastic Substrates,” Appl. Phys. Lett. 87:083501.Applicant
• Sun et al. (2005) “Advances in Organic Field-Effect Transistors,” J. Mater. Chem. 15:53-65.Applicant
• Sun et al. (Nov. 2006) “Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates,” Adv. Mater. 18(21):2857-2862.Applicant
• Sun et al. (2007) “Controlled Buckling of Semiconductor Nanoribbons for Stretchable Electronics,” Nat. Nanotechnol. 1:201-207.Applicant
• Sun et al. (2007) “Inorganic Semiconductors for Flexible Electronics,” Adv. Mater. 19:1897-1916.Applicant
• Sun et al. (2007) “Structural Forms of Single Crystal Semiconductor Nanoribbons for High-Performance Stretchable Electronics,” J. Mater Chem. 17:832-840.Applicant
• Sundar et al. (2004) “Elastomeric Transistor Stamps: Reversible Probing of CHaarge Transport in Organic Crystals,” Science 303:1644-1646.Applicant
• Suo et al. (Feb. 22, 1999) “Mechanics of Rollable and Foldable Film-on-Foil Electronics,” Appl. Phys. Lett. 74(8):1177-1179.Applicant
• Supplementary European Search Report, Corresponding to European Application No. 05 75 6327, Completed Sep. 25, 2009.Applicant
• Swain et al. (2004) “Curved CCD Detector Devices and Arrays for Multi-Spectral Astrophysical Application and Terrestrial Stereo Panoramic Cameras,” Proc. SPIE 5499:281-301.Applicant
• Sze et al. (1985) Semiconductor Devices, Physics and Technology, 2nd ed., Wiley, New York, pp. 190-192.Applicant
• Sze, S. (1994) Semiconductor Sensors, John Wiley and Sons: New York, pp. 17-95.Applicant
• Sze, S. (1985) Semiconductor Devices: Physics and Technology, New York: Wiley, pp. 428-467.Applicant
• Sze, S. (1988) VLSI Technology, Mcgraw-Hill, 327-374, 566-611.Applicant
• Takamoto et al. (Jan. 20, 1997) “Over 30% Efficient InGaP/GaAs Tandem Solar Cells,” Appl. Phys. Lett. 70(3):381-383.Applicant
• Talapin et al. (Oct. 7, 2005) “PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors,” Science 310:86-89.Applicant
• Tan et al. (Apr. 12, 2004) “Performance Enhancement of InGaN Light Emitting Diodes by Laser-Lift-off and Transfer from Sapphire to Copper Substrate,” Appl. Phys. Lett. 84(15):2757-2759.Applicant
• Tanase et al. (2002) “Magnetic Trapping and Self-Assembly of Multicomponent Nanowires,” J. Appl. Phys. 91:8549-8551.Applicant
• Tang et al. (2005) “One-Dimensional Assemblies of Nanoparticles: Preparation, Properties, and Promise,” Adv. Mater. 17:951-962.Applicant
• Tao et al. (2003) “Langmuir-Blodgett Silver Nanowire Monolayers for Molecular Sensing Using Surface-Enhanced Raman Spectroscopy,” Nano Lett. 3:1229-1233.Applicant
• Tate et al. (2000) “Anodization and Microcontact Printing on Electroless Silver: Solution-Based Fabrication Procedures for Low-Voltage Electronic Systems with Organic Active Components,” Langmuir 16:6054-6060.Applicant
• Teshima et al. (2001) “Room-Temperature Deposition of High-Purity Silicon Oxide Films by RF Plasma-Enhanced CVD,” Surf. Coat. Technol. 146-147:451-456.Applicant
• Theiss et al. (1998) “PolySilicon Thin Film Transistors Fabricated at 100° C on a Flexible Plastic Substrate,” IEDM 98:257-260.Applicant
• Toader et al. (2004) “Photonic Band Gaps Based on Tetragonal Lattices of Slanted Pores,” Phys. Rev. Lett. 90:233901/1-233901/4.Applicant
• Toader et al. (2004) “Photonic Band Gap Architectures for Holographic Lithography,” Phy. Rev. Lett. 043905/1-043905/4.Applicant
• Tong (1999) Semiconductor Wafer Bonding: Science and Technology, John Wiley; New York, pp. 187-221.Applicant
• Trau et al. (1997) “Microscopic Patterning of Orientated Mesoscopic Silica Through Guided Growth,” Nature 390:674-676.Applicant
• Trentler et al. (1995) “Solution-Liquid-Solid Growth of Crytalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth,” Science 270:1791-1794.Applicant
• Tseng et al. (Web Release Dec. 19, 2003) “Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology” Nano Lett. 4(1):123-127.Applicant
• Ucjikoga, S. (2002) “Low-Temperature Polycrystalline Silicon Thin-Film Transistor Technologies ofr System-on-Glass Displays,” MRS Bull. 27:881-.Applicant
• Urruchi et al. (2000) “Etching of DLC Films Using a Low Intensity Oxygen Plasma Jet,” Diamond Relat. Mater. 9:685-688.Applicant
• Vanhollenbeke et al. (2000) “Compliant Substrate Technology: Integration of Mismatched Materials for Opto-Electronic Applications,” Prog. Cryst. Growth Charact. Mater. 41(1-4):1-55.Applicant
• Velev et al. (1997) “Porous silica via colloidal crystallization,” Nature 389:447-448.Applicant
• Vilan et al. (2000) “Molecular Control Over Au/GaAs Diodes,” Nature 404:166-168.Applicant
• Vlasov et al. (2001) “On-Chip Natural Assembly of Silicon Photonic Bandgap Crystals,” Nature 414:289-293.Applicant
• Voss, D. (2000) “Cheap and Cheerful Circuits,” Nature 407:442-444.Applicant
• Wagner et al. (2003) “Silicon for Thin-Film Transistors,” Thin Solid Films 430:15-19.Applicant
• Wagner et al. (2005) “Electronic Skin: Architecture and Components,” Physica E 25:326-334.Applicant
• Wagner et al. (Mar. 1, 1964) “Vapor-Liquid-Solid Mechanism of Single Crystal Growth,” Appl. Phys. Lett. 4(5):89-90.Applicant
• Wang et al. (2006) “Direct Synthesis and Characterization of CdS Nanobelts,” Appl. Phys. Lett. 89:033102.Applicant
• Wang et al. (2003) “A Solution-Phase, Precursor Route to Polycrystalline SnO2 Nanowores that can be Used for Gas Sensing under Ambient Conditions,” J. Am. Chem. Soc. 125:16176-16177.Applicant
• Wang et al. (2005) “Electronically Selective Chemical Functionalization of Carbon Nanotubes: Correlation between Raman Spectral and Electrical Responses,” J. Am. Chem. Soc., 127:11460-11468.Applicant
• Wang et al. (2005) “Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization, and Langmuir-Blodgett Assembly,” J. Am. Chem. Soc. 127(33):11871-11875.Applicant
• Weber et al. (Jan. 2004) “A Novel Low-Cost, High Efficiency Micromachined Silicon Solar Cell,” IEEE Electron Device Lett. 25(1):37-39.Applicant
• Wen et al. (Web Release Dec. 4, 2004) “Controlled Growth of Large-Area, Uniform, Vertically Aligned Arrays of α-Fe2O2 Nanobelts and Nanowires,” J. Phys. Chem. B 109(1):215-220.Applicant
• Whang et al. (2003) “Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems,” Nano Lett. 3(9):1255-1259.Applicant
• Williams et al. (Oct. 2006) “Growth and Properties of Nanocrystalline Diamond Films,” Phys. Stat. Sol. A 203(13):3375-3386.Applicant
• Williams et al. (Web Release Jan. 23, 2006) “Comparison of the Growth and Properties of Ultranocrystalline Diamond and Nanocrystalline Diamond,” Diamond Relat. Mater. 15:654-658.Applicant
• Willner et al. (2002) “Functional Nanoparticle Architectures for Senoric, Optoelectronic, and Bioelectronic Applications,” Pure Appl. Chem. 74(9):1773-1783.Applicant
• Wind et al. (May 20, 2002) “Vertical Scaling of Carbon Nanotube-Field-Effect Transitors Using Top Gate Electrodes,” Appl. Phys. Lett. 80(20):3871-3819.Applicant
• Won et al. (2004) “Effect of Mechanical and Electrical Stresses on the Performance of an a-Si:H TFT on Plastic Substrate,” J. Electrochem. Soc. 151:G167-G170.Applicant
• Wu et al. (2002) “Growth of Au-Catalyzed Ordered GaAs Nanowire Arrays by Molecular-Beam Epitaxy,” Appl Phys. Lett. 81:5177-5179.Applicant
• Wu et al. (2003) “Growth, Branching, and Kinking of Molecular-Beam Epitaxial (110) GaAs Nanowires,” AppL. Phys. Lett. 83:3368-3370.Applicant
• Wu et al. (2001) “Amorphous Silicon Crystallization and Polysilicon Thin Film Transistors on SiP2 Passivated Steel Foil Substrates,” Apple. Surf. Sci 175-176:753-758.Applicant
• Wu et al. (2001) “Thermal Oxide of Polycrystalline Silicon on Steel Foil as a Thin-Film Transitor Gate Dielectric,” App. Phys. Lett. 78:3729-2731.Applicant
• Wu et al. (Jul. 1, 2004) “Single-Crystal Metallic Nanowires and Metal/Semiconductor Nanowire Heterostructures,” Nature 430:61-65.Applicant
• Wu et al. (2002) “Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires,” Nano Lett. 2(2):83-86.Applicant
• Wu et al. (2001) “Direct Observation of Vapor-Liquid-Solid Nanowire Growth,” J. Am. Chem. Soc. 123(13):3165-3166.Applicant
• Wu et al. (2002) “Inorganic Semiconductor Nanowires: Rational Growth, Assembly, and Novel Properties,” Chem. Eur. J. 8(6):1261-1268.Applicant
• Wu et al. (Nov. 2002) “Complementary Metal-Oxide-Semiconductor Thin-Film Transistor Circuits from a High-Temperature Polycrystalline Silicon Process on Steel Foil Substrates,” IEEE Trans. Electr. Dev. 49(11):1993-2000.Applicant
• Xia et al. (Jul. 19, 1996) “Complex Optical Surfaces Formed by Replica Molding Against Elastomeric Masters,” Science 273:347-349.Applicant
• Xia et al. (2003) “One-Dimensional Nanostructures: Synthesis, Characterization and Applications,” Adv. Mater. 15:353-389.Applicant
• Xia et al. (1998) “Soft Lithography,” Annu. Rev. Mater. Sci. 28:153-184.Applicant
• Xia et al. (1999) “Unconventional Methods for Fabricating and Patterning Nanostructures,” Chem. Rev. 99:1823-1848.Applicant
• Xia (1998) “Soft Lithography” Angew. Chem. Int. Ed. 37:551-575.Applicant
• Xia et al. (1996) “Shadowed Sputtering of Gold on V-Shaped Microtrenches Etched in Silicon and Applications in Microfabrication,” Adv. Mater. 8(9):765-768.Applicant
• Xiang et al. (Mar. 25, 2006) “Ge/Si Nanowire Heterostructures as High-Performance Field-Effect Transistors,” Nature 441:489-493.Applicant
• Xiao et al. (2003) “High-mobility thin-film transistors based on aligned carbon nanotubes,” Appl. Phys. Lett., vol. 83, No. 1, pp. 150-152.Applicant
• Xie et al. (May 2003) “Polymer-Controlled Growth of Sb2Se3 Nanoribbons Via a Hydrothermal Process,” J. Cryst. Growth 252(4):570-574.Applicant
• Xin et al. (Jun. 2005) “Evaluation of Polydimethylsiloxane Scaffolds with Physiologically-Relevant Elastic Moduli: Interplay of Substrate Mechanics and Surface Chemistry Effects on Vascular Smooth Muscle Cell Response,” Biomaterials 26(16):3123-3129.Applicant
• Yang et al. (1997) “Mesoporous Silica with Micrometer-Scale Desgns,” Adv. Mater. 9:811-814.Applicant
• Yang et al. (2002) “Creating Periodic Three-Dimensional Structures by Multibeam Interface of Visible Laser,” Chem. Mater. 14:2831-2833.Applicant
• Yang et al. (2000) “Stability of Low-Temperature Amorphous Silicon Thin Film Transistors Formed on Glass and Transparent Plastic Substrates,” J. Vac. Sci. Technol. B 18:683-689.Applicant
• Yang, P. (2005) “The Chemistry and Physics of Semiconductor Nanowires,” MRS Bull. 30:85-.Applicant
• Yang et al. (Dec. 2007) “RFID Tag and RF Structures on a Paper Substrate Using Inkjet-Printing Technology,” IEEE Trans. Microw. Theory Tech. 55(12):2894-2901.Applicant
• Yanina et al. (2002) “Terraces and ledges on (001) spinel surfaces,” Surf. Sci., 513:L402-L412.Applicant
• Yao et al. (Mar. 2000) “High-Field Effect Electrical Transport in Single-Walled Carbon Nanotubes,” Phys. Rev. Lett. 84(13):2941-2944.Applicant
• Yeh et al. (1994) “Fluidic Self-Assembly for the Integration of GaAs Light Emitting Diodes on Si Substrates,” IEEE Photon. Techn. Lett. 6:706-708.Applicant
• Yin et al. (2000) “A Soft Lithography Approach to the Fabrication of Nanostructures of Single Crystalline Silicon with Well-Defined Dimensions and Shapes,” Adv. Mater. 12:1426-1430.Applicant
• Yin et al. (2005) “Colloidal Nanocrystal Synthesis and the Organic-Inorganic Interface,” Nature 437:664-670.Applicant
• Yoon et al. (2005) “Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics,” J. Am. Chem. Soc. 127:10388-10395.Applicant
• Yu et al. (2003) “Two-Versus Three-Dimensional Quantum Confinement in Indium Phosphide Wires and Dots,” Nat. Mater. 2:517-520.Applicant
• Yu et al. (2003) “Solution-Liquid-Solid Growth of Soluble GaAs Nanowires,” Adv. Mater. 15:416-419.Applicant
• Yu et al. (2000) “Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties,” J. Phys. Chem. B 104(50):11864-11870.Applicant
• Yuan et al. (2006) “High-Speed Strained-Single-Crystal-Silicon Thin-Film Transistors on Flexible Polymers,” J. Appl. Phys. 100:013708.Applicant
• Yurelki et al. (Jul. 24, 2004) “Small-Angle Neutron Scattering from Surfactant-Assisted Aqueous Dispersions of Carbon Nanotubes,” J. Am. Chem. Soc. 126(32):9902-9903.Applicant
• Zakhidov et al. (1998) “Carbon Structure with Three-Dimensional Periodicity at Optical Wavelengths,” Science 282:897-901.Applicant
• Zaumseil et al. (2003) “Nanoscale Organic Transistors that use Source/Drain Electrodes Supported by High Resolution Rubber Stamps,” Appl. Phys. Lett. 82(5):793-795.Applicant
• Zaumseil et al. (2003) “Three-Dimensional and Multilayer Nanostructures Formed by Nanotransfer Printing,” Nano Lett. 3(9):1223-1227.Applicant
• Zhang et al. (2006) “Anomalous Coiling of SiGe/Si and SiGe/Si/Cr Helical Nanobelts,” Nano Lett. 6(7):1311-1317.Applicant
• Zhang et al. (Feb. 9, 2006) “Electronic Transport in Nanometre-Scale Silicon-on-Insulator Membranes,” Nature 439:703-706.Applicant
• Zhang et al. (Apr. 5, 2004) “Structure and Photoiluminescence of ZnSe Nanoribbons Grown by Metal Organic Chemical Vapor Deposition,” Appl. Phys. Lett. 84(14):2641-2643.Applicant
• Zhang et al. (2005) “Low-Temperature Growth and Photoluminescence Property of ZnS Nanoribbons,” J. Phys. Chem. B 109(39):18352-18355.Applicant
• Zhang et al. (Apr. 2003) “Oxide-Assisted Growth of Semiconducting Nanowires,” Adv. Mater. 15(7-8):635-640.Applicant
• Zhang et al. (2001) “Electric-field-directed growth of aligned single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 79, No. 19. pp. 3155-3157.Applicant
• Zhao et al. (Mar. 2007) “Improved Field Emission Properties from Metal-Coated Diamond Films,” Diamond Relat Mater. 16(3):650-653.Applicant
• Zheng et al. (Aug. 31, 2004) “Sequential Shape-and-Solder-Directed Self Assembly of Functional Microsystems,” Proc. Natl. Acad. Sci. USA 101(35):12814-12817.Applicant
• Zheng et al. (2004) “Shape-and Solder-Directed Self-Assembly to Package Semiconductor Device Segments,” Appl. Phys. Lett. 85:3635-3637.Applicant
• Zhou et al. (2005) “Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors,” Phys. Rev. Lett. 95:146805.Applicant
• Zhou et al. (2002) “An Efficient Two-Photon-Generated Photoacid Applied to Positive-Tone 3D Microfabrication,” Science 296:1106-1109.Applicant
• Zhou et al. (2005) “Mechanism for Stamp Collapse in Soft Lithography,” Appl. Phys. Lett. 87:251925.Applicant
• Zhou et al. (2004) “p-Channel, n-Channel Thin Film Transistors and p-n Diodes Based on Single Wall Carbon Nanotube Networks,” Nano Lett. 4:2031-2035.Applicant
• Zhu et al. (2005) “Spin on Dopants for High-Performance Single Crystal Silicon Transistors on Flexible Plastic Substrates,” Appl. Phys. Lett. 86(133507)1-3.Applicant