Field emitter based electron source for multiple spot X-ray

[0001] The present invention relates generally to field-type electron emitters, and, more particularly, to a system for limiting the effects of arcing in field-type electron emitter arrays, focusing an electron beam generated by the emitter, and controlling individual emitters in an emitter array. A field emitter unit includes a protection and focusing scheme that functions to minimize degradation of the electron beam and allow for focusing of the electron beam into a desired spot size. A control system is provided that allows for individual control of field emitter units in an array with a minimum amount of control channels.

[0002] Electron emissions in field-type electron emitter arrays are produced according to the Fowler-Nordheim theory relating the field emission current density of a clean metal surface to the electric field at the surface. Most field-type electron emitter arrays generally include an array of many field emitter devices. Emitter arrays can be micro- or nano-fabricated to contain tens of thousands of emitter devices on a single chip. Each emitter device, when properly driven, can emit a beam or current of electrons from the tip portion of the emitter device. Field emitter arrays have many applications, one of which is in field emitter displays, which can be implemented as a flat panel display. In addition, field emitter arrays may have applications as electron sources in microwave tubes, x-ray tubes, and other microelectronic devices.

[0003] The electron-emitting field emitter devices themselves may take a number of forms, such as a “Spindt”-type emitter. In operation, a control voltage is applied across a gating electrode and substrate to create a strong electric field and extract electrons from an emitter element placed on the substrate. Typically, the gate layer is common to all emitter devices of an emitter array and supplies the same control or emission voltage to the entire array. In some Spindt emitters, the control voltage may be about 100V. Other types of emitters may include refractory metal, carbide, diamond, or silicon tips or cones, silicon/carbon nanotubes, metallic nanowires, or carbon nanotubes.

[0004] At present, field emitter arrays are not known to be robust enough for use in several potential commercial applications, such as for use in x-ray tubes. Many existing emitter array designs are susceptible to operational failures and structural wear from electrical arcing. Arcing may be more likely to occur in the poor vacuum environment which exists in many x-ray tubes. Most commonly, an overvoltage applied to the gate layer of the emitter device may cause an arc to form between the gate layer and the emitter element, permitting current to flow in a short circuit from the gate layer through the emitter element to the substrate. Another type of arcing is known as insulator breakdown, in which an overvoltage applied to the gate layer can cause a breakdown of an insulating layer positioned between the gate layer and the substrate, which allows current to punch through and create a short circuit between the gate layer and substrate. The arc can also pass over the surface of the insulating layer resulting in what is known as a “flash over.”

[0005] When one emitter of an emitter array experiences arcing in either form, or “breaks down,” the insulating layer will no longer be able to support a voltage or electrical bias sufficient for electron emission to continue at the other emitters of the array. In addition, high temperatures produced by the short circuit current can cause wear or damage to the emitter as well as neighboring emitters. Thus, an arc at one emitter can affect the operation of the entire emitter array. It would therefore be desirable to have a system and method which protect an emitter array from the effects of arcing.

[0006] When used as an electron source in an x-ray tube application, field emitter arrays create additional challenges beyond those associated with breakdown. For example, certain mechanisms employed for lower voltage requirements in extracting an electron beam from the cathode, such as a grid structure, can increase the degradation of the electron beam quality. Increased beam emittance prevents the electron beam from focusing onto a small, useable focal spot on the anode. As such, the issue of beam quality degradation remains a problem in current field emitter designs.

[0007] Another issue with present designs of field emitter arrays is that each of the emitters in the array is addressed in turn via an associated bias or activation line and at appropriate time intervals. Due to the large number of emitter elements in a typical array, there can exist an equally large quantity of associated activation lines and connections. The large number of activation lines need to pass through the vacuum chamber of the x-ray tube to supply the emitter elements, thus there necessitates a large number of vacuum feedthroughs. There is an unavoidable leak rate associated with any feedthrough device, which can lead to gas pressure levels in the tube that can inhibit performance of the emitter elements and their ability to generate electrons.

[0008] Thus, a need exists for a system that protects emitter elements in an emitter array from the effects of arcing. It would also be desirable to have a system for controlling the emitter elements that reduces the number of activation lines and feedthrough channels.

[0009] Embodiments of the invention overcome the aforementioned drawbacks by providing a field emitter unit that provides low voltage extraction and improved beam focusing. The field emitter unit includes a protection and focusing scheme that functions to minimize degradation of the electron beam and allow for focusing of the electron beam into a desired spot size. A control scheme is also provided for controlling a plurality of field emitters units in an array with a minimal amount of activation connections.

[0010] According to one aspect of the invention, a multiple spot x-ray generator includes a plurality of electron generators arranged to form an electron generator matrix, the electron generator matrix including activation connections electrically connected to the plurality of electron generators and wherein each electron generator is connected to a pair of the activation connections to receive an electric potential therefrom. Each electron generator further includes an emitter element configured to emit an electron beam, a meshed grid disposed adjacent each emitter element to enhance an electric field at a surface of the emitter element, and a focusing element positioned to receive the electron beam from each of the emitter elements and focus the electron beam to form a focal spot on the target anode. The multiple spot x-ray generator also includes a target anode configured to produce an array of x-ray focal spots providing tomographic imaging of an object when impinged by a plurality of electron beams generated by the plurality of electron generators and an anode shield positioned about the target anode to capture backbombarding ions output from the target anode.

[0011] According to another aspect of the invention, an x-ray tube includes a housing enclosing a vacuum-sealed chamber therein and a target generally located at a first end of the chamber and configured to produce an array of x-ray focal spots providing tomographic imaging of an object when impinged by a plurality of electron beams. The multiple spot x-ray generator also includes a target shield housing the target and configured to trap ions therein generated by the interaction of the plurality of electron beams and the target and to intercept backscattered electrons, and a field emitter array generally located at a second end of the chamber to generate the plurality of electron beams and transmit the plurality of electron beams toward the target, the field emitter array including a plurality of field emitter units connected therein. Each of the plurality of field emitter units further includes a substrate, an emitter element positioned on the substrate and configured to generate an electron beam, and an extracting electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extracting electrode including an opening therethrough. Each field emitter unit also includes a metallic grid disposed in the opening of the extracting electrode to enhance the intensity and uniformity of an electric field at a surface of the emitter element and a focusing electrode positioned between the emitter element and the target to focus the electron beam as it passes therethrough.

[0012] According to yet another aspect of the invention, a distributed x-ray source for an imaging system includes a plurality of field emitters configured to generate at least one electron beam and a shielded anode positioned in a path of the at least one electron beam and configured to emit a beam of high-frequency electromagnetic energy conditioned for use in a CT imaging process when the electron beam impinges thereon. Each of the plurality of field emitters includes a carbon nanotube (CNT) emitter element and a gate electrode to extract the electron beam from CNT emitter element, the gate electrode including a meshed grid positioned in the electron beam path. Each of the field emitters further includes means for suppressing surface flashover in proximity to the CNT emitter element and means for focusing the electron beam to form a focal spot on the shielded anode.

[0013] These and other advantages and features will be more readily understood from the following detailed description of preferred embodiments of the invention that is provided in connection with the accompanying drawings.

[0027] The operating environment of embodiments of the invention is described with respect to an x-ray source or generator that includes a field emitter based cathode and/or an array of such field emitters. That is, the protection, focusing, and activation schemes of the invention are described as being provided for a field emitter based x-ray source. However, it will be appreciated by those skilled in the art that embodiments of the invention for such protection, focusing, and activation schemes are equally applicable for use with other cathode technologies, such as dispenser cathodes and other thermionic cathodes. The invention will be described with respect to a field emitter unit and arrays of such field emitters, but is equally applicable with other cold cathode and/or thermionic cathode structures.

[0028] Referring to FIG. 1, a cross-sectional view of a single electron generator 10 is depicted according to one embodiment of the invention. As will be explained in greater detail below, in one embodiment electron generator 10 is a cold cathode, carbon nanotube (CNT) field emitter, though it is understood that the features and adaptations described herein are also applicable to other types of field emitters, such as Spindt-type emitters, or other thermionic cathode or dispenser cathode type electron generators. As shown in FIG. 1, an electron generator comprises a field emitter unit 10 having a base or substrate layer 12 that is preferably formed of a conductive or semiconductive material such as a doped silicon-based substance or of copper or stainless steel. Therefore, substrate layer 12 is preferably rigid. A dielectric film 14 is formed or deposited over substrate 12 to separate an insulating layer 16 (i.e., ceramic spacer) therefrom. Dielectric film 14 is preferably formed of a non-conductive substance or a substance of a very high electrical resistance, such as silicon dioxide (SiO₂) or silicon nitride (Si3N4), or some other material having similar dielectric properties. A channel or aperture 18 is formed in dielectric film 14, by any of several known chemical or etching manufacturing processes.

[0029] Substrate layer 12 is registered onto insulating layer 16, which in one embodiment is a ceramic spacer element having desired insulating properties as well as compressive properties for absorbing loads caused by translation of the field emitter unit (e.g., when the field emitter unit forms part of an x-ray source that rotates about a CT gantry). Insulating layer 16 is used to separate the substrate layer 12 from an extraction electrode 20 (i.e., gate electrode, gate layer), so that an electrical potential may be applied between extraction electrode 20 and substrate 12. A channel or cavity 22 is formed in insulating layer 16, and a corresponding opening 24 is formed in extraction electrode 20. As shown, opening 24 substantially overlaps cavity 22. In other embodiments, cavity 22 and opening 24 may be of approximately the same diameter, or cavity 22 may be narrower than opening 24 of gate layer extraction electrode 20.

[0030] An electron emitter element 26 is disposed in cavity 24 and affixed on substrate layer 12. The interaction of an electrical field in opening 22 (created by extraction electrode 20) with the emitter element 26 generates an electron beam 28 that may be used for a variety of functions when a control voltage is applied to emitter element 26 by way of substrate 12. In one embodiment, emitter element 26 is a carbon nanotube based emitter; however, it is contemplated that the system and method described herein are also applicable to emitters formed of several other materials and shapes used in field-type emitters.

[0031] As shown in FIG. 1, the ceramic piece forming insulating layer 16 is formed to have a feature for suppressing surface flashover along the ceramic piece. In one embodiment, insulating layer 16 is formed to have one or more steps 30 around cavity 22. The stepped configuration 30 of the ceramic spacer 16 around cavity 22 helps suppress the surface flashover and protect emitter element 26. It is envisioned that emitter element 26 could be further protected by increasing a thickness of insulating layer 16 to further recess the emitter element 26 within cavity 22. Other methods for improving a voltage withstand capability of ceramic spacer 16 are also envisioned and include coating the spacer with a low secondary electron emissive coating or pre-treating the spacer surface with a low pressure plasma under high frequency in an inert gas environment.

[0032] Referring still to FIG. 1, a meshed grid 32 is positioned between cavity 22 and opening 24 of insulating layer 16 and extraction electrode 20, respectively. This positions meshed grid 32 in proximity to emitter element 26 to reduce the voltage needed to extract electron beam 28 from emitter element 26. That is, for efficient extraction, a gap between meshed grid 32 and emitter element 26 is kept within a desired distance (e.g., 0.1 mm-2 mm) in order to enhance the electric field around emitter element 26 and minimize the total extracting voltage necessary to extract electron beam 28. Placement of meshed grid 32 over cavity 22 allows for an extraction voltage applied to extraction electrode 20 in the range of approximately 1-3 kV, depending on the distance between meshed grid 32 and emitter element 26. By reducing the total extracting voltage to such a range, high voltage stability of field emitter unit 10 is improved and higher emission current in electron beam 28 is inherently made possible. The difference in potential between emitter element 26 and extraction electrode 20 is minimized to reduce high voltage instability in emitter unit 10 and simplify the need for complicated driver/control design therein.

[0033] A focusing electrode 34 is also included in field emitter unit 10 and is positioned above extraction electrode 20 to focus electron beam 28 as it passes through an aperture 36 formed therein. The size of aperture 36 and thickness of focusing electrode 34 are designed such that maximum electron beam compression can be achieved. As shown in FIG. 1, focusing electrode 34 is separated from extraction electrode 20 by a second ceramic spacer element 37. A voltage is applied to focusing electrode 34 to focus electron beam 28 by way of an electrostatic force such that the electron beam 28 is focused to form a desired focal spot 39 on a target anode 38. Additionally, focusing electrode 34 is configured such that it protects emitter element 26 from high voltage breakdown. That is, focusing electrode 34 helps to prevent an electrical breakdown of the emitter element 26, dielectric film 14, and insulating layer 16 and prevent the formation of an electric spark or electric arc (i.e., flashover) through such components that may, in part, result from ion back-bombardment generated from target anode 38, as will be explained in further detail below.

[0034] As set forth above, focusing electrode 34 functions to focus electron beam 28 into a desired focal spot 39 on target anode 38. As shown in FIG. 1, target anode 38 is housed within an anode shield 40 positioned thereabout. Anode shield 40 includes an opening 42 therein to allow electron beam 28 to pass through anode shield 40 and strike target anode 38. Upon the striking of the electron beam 28 on target anode 38, ions are generated via ionization of desorbed gases. As emitter element 26 is preferably operated at the ground potential and target anode 38 is operated at the full voltage potential, these positive ions attempt to travel backwards toward emitter element 26, which would cause damage to the emitter element 26. Anode shield 40 acts to trap the ions generated from target anode 38, thus preventing back-bombarding of the emitter element 26. Ion back-bombardment may also trigger high voltage arcing between field emitter and high potential anode. Therefore, placement of anode shield 40 about target anode 38 can also improve the high voltage stability of field emitter unit 10 by preventing high voltage arcing.

[0035] Anode shield 40 can also intercept electrons backscattered from anode surface. Without such shield, most of these backscattered electrons leave the surface of the target with a large proportion of their original kinetic energy and will return to the anode at some distance from the focal spot producing off-focal radiation. Therefore, anode shield 40 can improve the image quality by reducing off-focal radiation.

[0036] Inception of the backscattering electrons with anode shield 40 can also improve the thermal management of the target by preventing them from back striking the target. Such anode shield 40 can be liquid cooled.

[0037] Anode shield 40 can also be constructed to provide partial x-ray shielding by coating the anode with a high Z material 44 (i.e., a high atomic number material, such as tungsten) on an inner surface of anode shield 40. Placement of anode shield 40 about target anode 38 can also improve the high voltage stability of field emitter unit 10 and help prevent high voltage arcing. As target shield 40 is positioned very close to target anode 38, it is possible to reduce the material needed for x-ray shielding, thus reducing the total weight of an x-ray source (shown in FIGS. 10 and 11) incorporating field emitter unit 10 and target anode 38 and allowing for positioning of the x-ray source onto a rotating CT gantry (shown in FIGS. 10 and 11).

[0038] As shown in FIG. 2, in another embodiment, target anode 38 is biased relative to anode shield 40 to improve the ion trapping. That is, ions generated upon the striking of electron beam 28 on target anode 38 are deflected off at angle relative to the incoming electron beam 28 and opening 42, thus preventing a majority of the ions from escaping from anode shield 40. The target anode 38 can be tilted such that electron beam 28 strikes target anode 38 with an angle of incidence of approximately between 10 to 90 degrees. Thus, for example, target anode 38 can be tilted by around 20 degrees with respect to the path of electron beam 28 to provide for adequate deflection of the generated ions. The x-rays generated by electron beam striking target anode exit anode shield 40 through a viewing window 46.

[0039] Referring now to FIG. 3, in another embodiment, emitter element 26 is comprised of a plurality of macro emitters 48. As shown in FIG. 3, macro emitters 48 are comprised of a plurality of carbon nanotubes (CNTs) 50. To reduce the attenuation of electron beam 28 caused by the striking of electrons against meshed grid 32, CNTs 50 are patterned into multiple CNT groups 52 that are aligned with openings 54 in meshed grid 32. By aligning CNT groups 52 with openings 54 in meshed grid 32, interception of beam current in electron beam 28 can be reduced to almost zero, depending on the meshed grid structure. Also, by aligning CNT groups 52 with openings 54, a substantially higher fraction of electrons will pass through the meshed grid 32, thus increasing the total beam emission current and allowing for optimal focusing of electron beam 28 for forming a desired focal spot, as set forth above. The reduction of electron interception by the grid also reduces the heating of the grid, thus improving the grid life. Further, the reduction of electron interception on the grid also alleviates the loading on the driving circuits (not shown).

[0040] In another embodiment, and as shown in FIG. 4, field emitter unit 10 is provided in a curved configuration to further increase focusing capability. Field emitter unit 10 is depicted in a partial cross-sectional view to illustrate a curvature 58 thereof. As shown, a substrate layer 60 and an extraction electrode/meshed grid 62 are curved such that electron streams 64 from multiple macro emitters 48 tend to converge. Preferably, curvature 58 may be concave and chosen to cause a desired convergence or focusing of the electron streams into a desired focal spot size on target anode 38. As known in the art, varying the area of the anode 38 on which an electron current impinges (i.e., focal spot 39) varies characteristics of the resulting x-ray beam. It is understood that, while only a single field emitter unit 10 is shown, curvature 58 may extend across multiple rows of emitters in a field emitter array (not shown) and that such an array may be curved across more than one dimension.

[0041] Referring now to FIGS. 5-7, focusing electrode 34 is shown in several embodiments that provide desired electron beam focusing in field emitter unit 10. As shown in FIG. 5, in one embodiment, focusing electrode 34 includes an angled aperture 66 formed in the electrode to provide a focusing angle for electron beam 28. The aperture 66 can be angled at the Pierce angle (i.e., 67.5 degrees) or other suitable angles to provide desired electron beam focusing. Additionally, opening 42 in anode shield 40 can be formed to have a focusing angle 68 to further improve the electron beam focusing.

[0042] In another embodiment, and as shown in FIG. 6, the focusing electrode comprises an Einzel lens 70. The Einzel lens 70 is constructed of three electrodes 72, 74, 76, with the outer two electrodes 72, 74 having a first potential and the middle electrode 76 having a second and different potential. Each of the three electrodes 72, 74, 76 are cylindrical or rectangular in shape and are arranged in series along an axis corresponding to the path of the electron beam 28. The electrodes 72, 74, 76 manipulate the electric field to deflect electron beam 28 as it passes therethrough. The electrodes 72, 74, 76 are symmetric so electron beam 28 will regain its initial speed on exiting the Einzel lens 70, although the velocity of outer particles in the electron beam will be altered such that they converge onto the axis/path of travel of electron beam 28, thus focusing the beam. While Einzel lens 70 is shown as being comprised of three electrodes 72, 74, 76, it is also envisioned that additional electrodes may be used. Further, a variation of the Einzel lens could also use asymmetric voltage on the first and third electrodes.

[0043] For certain advanced CT applications, it is desirable to have electron beam wobbling capability. Thus, as shown in the embodiment of FIG. 7, the focusing electrode is configured as a split lens 78 including four segments 80, 82, 84, 86. Each segment 80, 82, 84, 86 has a different voltage applied thereto (V1, V2, V3, V4) to form a combined dipole and quadrupole field. The dipole component of the field is used for wobbling of electron beam 28 and the quadrupole component of the field is used for electron beam shape correction during wobbling. The angle of the split between segments 80, 82, 84, 86 in split lens 78 and the voltage applied to each segment during beam focusing/shaping can be selected so as to provide optimal focusing/shaping of electron beam 28.

[0044] While shown as a single field emitter unit 10 in FIGS. 1-7, a plurality of field emitter units 10 can be arranged in a matrix to form a field emitter array 88 (i.e., electron generator matrix), thus providing an electron source (and multiple electron beam source locations) for a multiple spot x-ray source 90 (i.e., distributed x-ray source). Referring now to FIG. 8, a field emitter array 88 is depicted as a nine multiple spot x-ray source 90; however, it is realized that the number of field emitter units 10, and hence the size of the field emitter array 88, can vary depending on the application. Nine field emitter units 10 are arranged into a 3×3 array. Field emitter units 10 may be selectively turned ON and OFF to form the electron beams (not shown). The field emitter units 10 may be sequentially activated to effectively allow the electron beams to be sequentially generated or may be non-sequentially activated. The field emitter units 10 may be arbitrarily or randomly activated to improve image quality. The electron beams are emitted from the field emitter units 10 and are directed toward a target anode (not shown).

[0045] The field emitter array 88 has three rows, designated by X, Y, and Z, and three columns, designated by A, B, and C. The field emitter units 10 are activated or addressed by six activation connections 92, which are shared among field emitter units 10. Note that each field emitter unit 10 has two associated activation connections 92, one from rows X-Z and one from columns A-C. Thus, for a field emitter array 88 in this configuration, with N rows and N columns or N² elements, there are 2N (i.e., N+N) activation connections 92. As another example, a 900-emitter array in this configuration would utilize 60 activation connections. The activation connections 92 may be considered as 60 vacuum feedthrough lines.

[0046] Each activation connection 92 corresponding to a row X-Z of field emitter units 10 delivers an emitter voltage to an emitter element (see FIG. 1) in each field emitter unit 10 of the row. Each activation connection 92 corresponding to a column A-C of field emitter units 10 delivers an extraction voltage to an extraction electrode (see FIG. 1) in each field emitter unit 10 of the column. The voltage on the extraction electrode and emitter element in each field emitter unit 10 can be independently controlled as “High” and “Low.” Thus, for example, to address a specific field emitter unit 94, a first specific emitter row X containing the specified emitter unit 94 is set to Low voltage and the other emitter rows Y-Z are set to High voltage. The extracting column C containing the specified emitter unit 94 is then set to High voltage and the rest of the extracting columns A-B are set to Low voltage, resulting in the specific field emitter unit 94 being addressed. In addition to independently controlling High and Low voltages in each row and column, the High and Low voltages themselves applied to each field emitter unit 10 can be individually controlled to modulate the electron beam current, which is a desirable feature for CT applications.

[0047] In addition to activation lines 92 configured to apply an emitter voltage and extraction voltage to each field emitter unit 10, it is also envisioned that a pair of common focusing lines (not shown) may be coupled to each field emitter unit 10 and the focusing electrode therein to control the width and length of the focal spot generated by each field emitter unit 10.

[0048] Referring now to FIG. 9, an x-ray generating tube 140, such as for a CT system, is shown. Principally, x-ray tube 140 includes a cathode assembly 142 and an anode assembly 144 encased in a housing 146. Anode assembly 144 includes a rotor 158 configured to turn a rotating anode disc 154 and anode shield 156 surrounding the anode disc, as is known in the art. When struck by an electron current 162 from cathode assembly 142, anode 154 emits an x-ray beam 160 therefrom. Cathode assembly 142 incorporates an electron source 148 positioned in place by a support structure 150. Electron source 148 includes a field emitter array 152 to produce a primary electron current 162, as described in detail above. Further, with multiple electron sources, the target does not have to be a rotating target. Rather, it is possible to use a stationary target with electron beam is turned on sequentially from multiple cathodes. The stationary target can be cooled directly with oil, water, or another suitable liquid.

[0049] Referring to FIG. 10, a computed tomography (CT) imaging system 210 is shown as including a gantry 212 representative of a “third generation” CT scanner. Gantry 212 has an x-ray source 214 that rotates thereabout and that projects a beam of x-rays 216 toward a detector assembly 218 or collimator on the opposite side of the gantry 212. X-ray source 214 includes an x-ray tube having a field emitter based cathode constructed as in any of the embodiments described above. Referring now to FIG. 11, detector assembly 218 is formed by a plurality of detectors 220 and data acquisition systems (DAS) 232. The plurality of detectors 220 sense the projected x-rays that pass through a medical patient 222, and DAS 232 converts the data to digital signals for subsequent processing. Each detector 220 produces an analog electrical signal that represents the intensity of an impinging x-ray beam and hence the attenuated beam as it passes through the patient 222. During a scan to acquire x-ray projection data, gantry 212 and the components mounted thereon rotate about a center of rotation 224.

[0050] Rotation of gantry 212 and the operation of x-ray source 214 are governed by a control mechanism 226 of CT system 210. Control mechanism 226 includes an x-ray controller 228 that provides power, control, and timing signals to x-ray source 214 and a gantry motor controller 230 that controls the rotational speed and position of gantry 212. X-ray controller 228 is preferably programmed to account for the electron beam amplification properties of an x-ray tube of the invention when determining a voltage to apply to field emitter based x-ray source 214 to produce a desired x-ray beam intensity and timing. An image reconstructor 234 receives sampled and digitized x-ray data from DAS 232 and performs high speed reconstruction. The reconstructed image is applied as an input to a computer 236 which stores the image in a mass storage device 238.

[0051] Computer 236 also receives commands and scanning parameters from an operator via console 240 that has some form of operator interface, such as a keyboard, mouse, voice activated controller, or any other suitable input apparatus. An associated display 242 allows the operator to observe the reconstructed image and other data from computer 236. The operator supplied commands and parameters are used by computer 236 to provide control signals and information to DAS 232, x-ray controller 228 and gantry motor controller 230. In addition, computer 236 operates a table motor controller 244 which controls a motorized table 246 to position patient 222 and gantry 212. Particularly, table 246 moves patients 222 through a gantry opening 248 of FIG. 10 in whole or in part.

[0052] While described with respect to a sixty-four-slice “third generation” computed tomography (CT) system, it will be appreciated by those skilled in the art that embodiments of the invention are equally applicable for use with other imaging modalities, such as electron gun based systems, x-ray projection imaging, package inspection systems, as well as other multi-slice CT configurations or systems or inverse geometry CT (IGCT) systems. Moreover, the invention has been described with respect to the generation, detection and/or conversion of x-rays. However, one skilled in the art will further appreciate that the invention is also applicable for the generation, detection, and/or conversion of other high frequency electromagnetic energy.

[0053] Therefore, according to one embodiment of the invention, a multiple spot x-ray generator includes a plurality of electron generators arranged to form an electron generator matrix, the electron generator matrix including activation connections electrically connected to the plurality of electron generators and wherein each electron generator is connected to a pair of the activation connections to receive an electric potential therefrom. Each electron generator further includes an emitter element configured to emit an electron beam, a meshed grid disposed adjacent each emitter element to enhance an electric field at a surface of the emitter element, and a focusing element positioned to receive the electron beam from each of the emitter elements and focus the electron beam to form a focal spot on the target anode. The multiple spot x-ray generator also includes a target anode configured to produce an array of x-ray focal spots providing tomographic imaging of an object when impinged by a plurality of electron beams generated by the plurality of electron generators and an anode shield positioned about the target anode to capture backbombarding ions output from the target anode.

[0054] According to another embodiment of the invention, an x-ray tube includes a housing enclosing a vacuum-sealed chamber therein and a target generally located at a first end of the chamber and configured to produce an array of x-ray focal spots providing tomographic imaging of an object when impinged by a plurality of electron beams. The multiple spot x-ray generator also includes a target shield housing the target and configured to trap ions therein generated by the interaction of the plurality of electron beams and the target and to intercept backscattered electrons, and a field emitter array generally located at a second end of the chamber to generate the plurality of electron beams and transmit the plurality of electron beams toward the target, the field emitter array including a plurality of field emitter units connected therein. Each of the plurality of field emitter units further includes a substrate, an emitter element positioned on the substrate and configured to generate an electron beam, and an extracting electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extracting electrode including an opening therethrough. Each field emitter unit also includes a metallic grid disposed in the opening of the extracting electrode to enhance the intensity and uniformity of an electric field at a surface of the emitter element and a focusing electrode positioned between the emitter element and the target to focus the electron beam as it passes therethrough.

[0055] According to yet another embodiment of the invention, a distributed x-ray source for an imaging system includes a plurality of field emitters configured to generate at least one electron beam and a shielded anode positioned in a path of the at least one electron beam and configured to emit a beam of high-frequency electromagnetic energy conditioned for use in a CT imaging process when the electron beam impinges thereon. Each of the plurality of field emitters includes a carbon nanotube (CNT) emitter element and a gate electrode to extract the electron beam from CNT emitter element, the gate electrode including a meshed grid positioned in the electron beam path. Each of the field emitters further includes means for suppressing surface flashover in proximity to the CNT emitter element and means for focusing the electron beam to form a focal spot on the shielded anode.

[0056] While the invention has been described in detail in connection with only a limited number of embodiments, it should be readily understood that the invention is not limited to such disclosed embodiments. Rather, the invention can be modified to incorporate any number of variations, alterations, substitutions or equivalent arrangements not heretofore described, but which are commensurate with the spirit and scope of the invention. Additionally, while various embodiments of the invention have been described, it is to be understood that aspects of the invention may include only some of the described embodiments. Accordingly, the invention is not to be seen as limited by the foregoing description, but is only limited by the scope of the appended claims.