US 7,791,434 B2Grant
Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
Issue Date:2010-09-07
•33 Claims
•8 Drawing Sheets
Abstract
An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
Metadata
Assignee
- Avago Technologies Wireless IP (Singapore) Pte. Ltd.
Inventors
- Ronald S. Fazzio
- Hongjun Feng
Application Information
Application Number:US 11/021,085
Filing Date:2004-12-22
Priority Date:2004-12-22
Art Unit:2817
Classifications
IPC:
H03H9/15
Patent Drawings (8 sheets)
Description
Cross-Reference to Related Applications
[0001] This Patent Application is related to Utility patent application Ser. No. 10/867,540, filed on Jun. 14, 2004 now U.S. Pat. No. 7,161,448, entitled “ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING RECESSED REGION,” and is commonly assigned to the same assignee as the present invention.
Background
[0002] The need to reduce the cost and size of electronic equipment has created a need for smaller single filtering elements. Thin-Film Bulk Acoustic Resonators (FBARs) and Stacked Thin-Film Bulk Wave Acoustic Resonators (SBARs) represent one class of filter elements with potential for meeting these needs. These filters can collectively be referred to as FBARs. An FBAR is an acoustic resonator that uses bulk longitudinal acoustic waves in thin-film piezoelectric (PZ) material. Typically, an FBAR includes a layer of PZ material sandwiched between two metal electrodes. The combination PZ material and electrodes are suspended in air by supporting the combination around its perimeter or are placed over an acoustic mirror.
[0003] When an electrical field is created between the two electrodes, the PZ material converts some of the electrical energy into mechanical energy in the form of acoustic waves. The acoustic waves propagate in the same direction as the electric field and reflect off the electrode-air or electrode-acoustic mirror interface at some frequency, including at a resonance frequency. At the resonance frequency, the device can be used as an electronic resonator. Multiple FBARs can be combined such that each are elements in RF filters.
[0004] Ideally, the resonant energy in the filter elements is entirely “trapped” in the resonator. In practice, however, dispersive modes exist. These modes can result in a decreased quality factor (Q) for the filter.
[0005] For these and other reasons, a need exists for the present invention.
Summary
[0006] One aspect of the present invention provides an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.
Brief Description of the Drawings
[0007] FIG. 1 illustrates a top plan view of an FBAR.
[0008] FIG. 2 illustrates a cross-sectional view of an FBAR.
[0009] FIG. 3 illustrates a cross-sectional view of an FBAR according to one embodiment of the present invention.
[0010] FIG. 4 illustrates a top plan view of one embodiment of the FBAR illustrated in FIG. 3 .
[0011] FIG. 5 illustrates a top plan view of an alternative embodiment of the FBAR illustrated in FIG. 3 .
[0012] FIG. 6 illustrates Q circles for two exemplary FBARs plotted on a Smith chart.
[0013] FIG. 7 illustrates a cross-sectional view of an FBAR according to one embodiment of the present invention.
[0014] FIG. 8 is a cross-sectional view of an FBAR according to another embodiment of the present invention.
[0015] FIG. 9 is a cross-sectional view of an FBAR according to another embodiment of the present invention.
[0016] FIG. 10 is a cross-sectional view of an FBAR according to another embodiment of the present invention.
[0017] FIG. 11 is a cross-sectional view of an FBAR according to another embodiment.
Detailed Description
[0018] In the following Detailed Description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as “top,” “bottom,” “front,” “back,” “leading,” “trailing,” etc., is used with reference to the orientation of the Figure(s) being described. Because components of embodiments of the present invention can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
[0019] FIGS. 1 and 2 illustrate top and cross-sectional views, respectively, of FBAR 10. FBAR 10 includes substrate 12, depression 14, first electrode 16, piezoelectric (PZ) layer 18, second electrode 20, and passivation layer 22. In FIG. 1 , passivation layer 22 has been removed, and first electrode 16 and depression 14 are hidden from view. Second electrode 20 has a perimeter that is illustrated in FIG. 1 as pentagon-shaped. Typically, contacts are coupled to first electrode 16 and to second electrode 20. These contacts facilitate connecting the first and second electrodes 16 and 20 to a source of voltage. Two locations along that perimeter, first edge 20a and second edge 20b, are illustrated in the plan view of FIG. 1 and the cross-sectional view of FIG. 2 .
[0020] First electrode 16, PZ layer 18, second electrode 20, and passivation layer 22 collectively form FBAR membrane 23. FBAR membrane 23 is adjacent substrate 12 and suspended over depression 14 to provide an electrode-air interface. In one embodiment, depression 14 is created by etching away a portion of substrate 12. Depression 14 is deep enough so that sufficient electrode-air interface is created under FBAR membrane 23.
[0021] In an alternative embodiment, FBAR membrane 23 may be placed adjacent an acoustic mirror (not illustrated in FIGS. 1 and 2 ) formed within substrate 12. In this way, an electrode-acoustic mirror interface is formed. The resonator thus formed is a Solid Mounted Resonator (SMR).
[0022] In one embodiment, substrate 12 is made of silicon (Si) and PZ layer 18 is made from aluminum nitride (AlN). Alternatively, other piezoelectric materials may be used for PZ layer 18. In one embodiment, first and second electrode 16 and 20 may be made of molybdenum (Mo). Alternatively, other materials may be used for the electrodes. In one embodiment, the contacts may be made of gold (Au). Alternatively, other materials may be used for the contacts.
[0023] FBAR 10 illustrated in FIGS. 1 and 2 is configured to use bulk compression or sheer acoustic waves propagating in PZ layer 18. When an electric field is created between first and second electrodes 16 and 20 via an impressed voltage, the piezoelectric material of PZ layer 18 converts some of the electrical energy into mechanical energy in the form of acoustic waves. So configured, FBAR 10 exhibits dispersive modes resulting in a quality factor (Q) loss for FBAR 10.
[0024] FIG. 3 illustrates a cross-sectional view of FBAR 40 in accordance with one embodiment of the present invention. FBAR 40 includes substrate 42, depression 44, first electrode 46, piezoelectric (PZ) layer 48, second electrode 50, and passivation layer 52. Typically, contacts (not illustrated in FIG. 3 ) are coupled to first and second electrodes 46 and electrode 50. The contacts facilitate connecting first and second electrodes 46 and 50 to a voltage source. First electrode 46, PZ layer 48, second electrode 50, and passivation layer 52 collectively form FBAR membrane 53, which may be placed over a depression 44 or over an acoustic mirror as discussed above. FBAR membrane 53 is illustrated adjacent substrate 42 and suspended over depression 44 to provide an electrode-air interface. As with previous embodiments, an electrode-acoustic mirror interface is also obtainable using an SMR design in accordance with the present invention.
[0025] Second electrode 50 and passivation layer 52 have a perimeter that can be of various configurations. For example, the perimeters of each can be pentagon-shaped, similar to FBAR 10 above. They could also be any of various polygonal shapes, circular, or various irregular shapes. The cross-sectional view illustrated in FIG. 3 illustrates two locations along the perimeter of second electrode 50, first and second edges 50a and 50b. In one embodiment, edges of passivation layer 52 are generally aligned with those of second electrode 50 in the vertical direction as FBAR 40 is illustrated in FIG. 3 .
[0026] In FBAR 40 illustrated in FIG. 3 , a recessed feature 60 has been selectively etched into PZ layer 48 adjacent the first and second edges 50a and 50b of second electrode 50. When first and second edges 50a and 50b of second electrode 50 are considered to be vertical (as oriented in the illustration of FIG. 3 ), recessed feature 60 is “outside” the first and second edges 50a and 50b of second electrode 50 in the horizontal direction. (For comparison, depression 44 would be considered “inside” the first and second edges 50a and 50b of second electrode 50 in the horizontal direction.
[0027] Recessed feature 60 improves the performance of FBAR 40, resulting in improved insertion loss and improved resonator quality factor Q of FBAR 40. The overall quality factor Q of FBAR 40 depends proportionally on a parameter of resistance called Rp. In FBAR 40, the Rp may be improved by recessed feature 60.
[0028] An electric field is created between first and second electrodes 46 and 50 via an impressed voltage. The piezoelectric material of PZ layer 18 converts some of the electrical energy into mechanical energy in the form of acoustic waves. Some of the acoustic waves in FBAR 40 are longitudinally-directed acoustic waves of any mode type, while others are referred to transversely-directed acoustic waves of the compression, or shear-mode type. FBAR 40 is designed to use bulk compression or sheer acoustic waves propagating in a longitudinal direction in the PZ layer 48 as the desired resonator mode. However, FBAR 40, which provides recessed feature 60, reduces or suppresses energy loss, thereby improving the Q of the filter. Recessed feature 60 may also help suppress noise in the filter. The recessed feature 60 may also be referred to herein as a trench.
[0029] Recessed feature 60 may have a depth in PZ layer 48 that is on the order of hundreds to thousands of angstroms, and may have a width on the order of fractions of a micron to microns or even larger, up to the width of PZ layer 48 that extends beyond first and second edges 50a and 50b of second electrode 50. In one embodiment, PZ layer 48 is selectively etched to form recessed feature 60 that is fraction of a micron to microns to 10's of microns wide by 100's to 1000's angstroms deep. Also in one case, recessed feature 60 is offset from first and second edges 50a and 50b of second electrode 50 by fractions of a micron to microns. In other words, recessed feature 60 is outside first and second edges 50a and 50b of second electrode 50 by fractions of a micron to microns.
[0030] FIGS. 4 and 5 illustrate plan views of FBAR 40 of FIG. 3 in accordance with alternative embodiments of the present invention. As illustrated in FIGS. 4 and 5 , FBAR 40 includes substrate 42, piezoelectric (PZ) layer 48, second electrode 50. In FIGS. 4 and 5 , passivation layer 52 has been removed, and first electrode 46 and depression 44 are hidden from view. Typically, contacts (not illustrated in the Figures) are coupled to first and second electrodes 46 and electrode 50.
[0031] In FIGS. 4 and 5 , recessed feature 60 is illustrated extending adjacent the perimeter of second electrode 50. In the Figures, the perimeter of second electrode 50 is generally pentagon-shaped having five relatively straight edges, but may also be polygonal in shape, circular in shape, or have any other smooth or irregular shape. In FIG. 4 , recessed feature 60 is illustrated extending adjacent and outside the perimeter of second electrode 50 along four of the five edges of the pentagon-shaped electrode. Since a contact would typically be attached to the fifth edge of the electrode (labeled 50a), recessed feature 60 does not extend along that edge. FIG. 5 illustrates an alternative embodiment of FBAR 40 where recessed feature 60 extends adjacent the perimeter of second electrode 50 along two of the five edges of the pentagon-shaped electrode.
[0032] As one skilled in the art will understand, any number of alternative recessed feature 60 may be provided adjacent the edges of second electrode 50 consistent with the present invention. Recessed feature 60 may be continuously extending along some or all of the edges of second electrode 50 as illustrated, the recessed feature 60 may have smaller segments that are not continuous along the edge, and other shapes and configurations of recessed feature 60 may be used, especially where second electrode 50 is a shape other than a pentagon.
[0033] FIG. 6 illustrates Q circles for two exemplary FBARs plotted on a Smith chart, and illustrates improvement in Rp and therefore Q in one of the FBARs. As is known in the art, a Smith Chart is a polar plot of a complex impedance (used in the following to show measures of s11 and s22 scattering parameters). These s11 and s22 scattering parameters represent a ratio of complex amplitudes of backward and forward waves. The Smith Chart aids in translating the reflection coefficients into impedance and it maps part of the impedance placed into a unit circle.
[0034] The improved performance of FBAR 40 is demonstrated by the Q circles illustrated in FIG. 6 . FIG. 6 illustrates the S-parameter measurements of an exemplary etched device, such as FBAR 40 with recessed feature 60 having exemplary measurements in one case that are 14.5 μm wide by 3000 Å deep and offset from second electrode 50 by 0.5 μm. As illustrated, etched device (dashed line labeled S11) has a much improved Rp versus that of a control device (solid line labeled S22).
[0035] Generally, the horizontal axis passing through the unit circle represents real impedance, the area above the axis represents inductive reactance and the area below represents capacitive reactance. The left-hand portion of the chart at zero reactance represents series resonance frequency (fs) and occurs where the Q circle crosses the real axes on the left side of the Smith Chart. The left-hand portion of the chart also demonstrates the parameter of resistance Rs. The right-hand portion of the chart at zero reactance represents parallel resonant frequency (fp) and occurs where the Q circle crosses the real axes on the right side the Smith Chart. The right-hand portion of the chart also demonstrates the parameter of resistance Rp. The closer that a plot of FBAR filter characteristics on a Smith Chart is to the perimeter of the Smith Chart, the higher the Q will be for that FBAR. Also, the more smooth that the curve is, the lower the noise is in the FBAR.
[0036] In FIG. 6 , the performance of FBAR 40 as a filter is illustrated by dashed line Q circle s11 and the performance of a prior art FBAR without a recessed region is illustrated by solid line Q circle s22. As evident, FBAR 40 improves the quality of the filter near the resistance Rp. FBAR 40, illustrated by Q circle s11, more closely approximates a circle and is representative of a lower noise and less lossy device, which improves the performance of FBAR 40 when used in a filter.
[0037] FIG. 7 illustrates a cross-sectional view of FBAR 40 in accordance with an alternative embodiment of the present invention. FBAR 40 is essentially the same as that illustrated in FIG. 3 , and includes substrate 42, depression 44, first electrode 46, piezoelectric (PZ) layer 48, second electrode 50, and passivation layer 52. First and second edges 50a and 50b of the perimeter of second electrode 50 are also illustrated. In addition, however, FBAR 40 illustrated in FIG. 7 , has recessed feature 60 formed on a surface of PZ layer 48 that is opposite the surface in which recessed feature 60 was formed in FIG. 3 . As FBAR 40 is depicted in FIG. 3 , recessed feature 60 is on the “top” surface of PZ layer 48, whereas as FBAR 40 is depicted in FIG. 7 , recessed feature 60 is on the “bottom” surface of PZ layer 48. As with recessed feature 60 depicted in FIG. 3 , recessed feature 60 depicted in FIG. 7 is also outside first and second edges 50a and 50b of second electrode 50. The performance of FBAR 40 as illustrated in FIG. 7 may be the same as that described above for FBAR 40 as depicted in FIG. 3 . Recessed feature 60 on the “bottom” surface of PZ layer 48 may be achieved in a variety of ways known by those skilled in the art, including but not limited to, a release of a sacrificial material.
[0038] FIG. 8 illustrates a cross-sectional view of FBAR 40 in accordance with an alternative embodiment of the present invention. FBAR 40 is essentially the same as that illustrated in FIG. 3 , and includes substrate 42, depression 44, first electrode 46, piezoelectric (PZ) layer 48, second electrode 50, and passivation layer 52. In addition, however, FBAR 40 illustrated in FIG. 8 , has fill material 61 inserted in recessed feature 60, which were illustrated in FIG. 3 . Fill material 61 inserted in recessed feature 60 can further improve the performance of FBAR 40, resulting in improved insertion loss and improved resonator quality factor Q of FBAR 40.
[0039] In one embodiment, fill material 61 is the same material as that used for second electrode 50. In that case, fill material 61 will have different dispersion characteristic than will the remaining material of PZ layer 48, which is one case in AlN. Adding this material with differing dispersion characteristics can improve insertion loss and improve the resonator quality factor Q of FBAR 40. For example, fill material 61 can be made of Mo material just as first and second electrodes 46 and 50, or metal such as Pt, W, Cu, Al, Au, or Ag. In alternative embodiments, fill material 61 could also be made of other materials, such as polyimide, benzocyclobutene, SiO2, Si3N4, or other dielectrics, AlN, ZnO, LiNbO3, PZT, LiTaO3, Al2O3, or other piezoelectric materials.
[0040] FIG. 9 illustrates FBAR 70 in accordance with an alternative embodiment of the present invention. FBAR 70 includes substrate 72, depression 74, first electrode 76, piezoelectric (PZ) layer 78, second electrode 80, and passivation layer 82. Typically, contacts (not illustrated in FIG. 9 ) are coupled to first and second electrodes 76 and electrode 80. The contacts facilitate connecting first and second electrodes 76 and 80 to a voltage source. First electrode 76, PZ layer 78, second electrode 80, and passivation layer 82 collectively form FBAR membrane 83, which may be placed over a depression 74 or over an acoustic mirror as discussed above. FBAR membrane 83 is illustrated adjacent substrate 72 and suspended over depression 74 to provide an electrode-air interface. As with previous embodiments, an electrode-acoustic mirror interface is also obtainable using an SMR design in accordance with the present invention.
[0041] First and second edges 80a and 80b of second electrode 80 are aligned in the horizontal direction relative to the edges of passivation layer 82. Adjacent these edges, recessed feature 90 is formed in passivation layer 82. Like recessed feature 60 described previously with respect to FBAR 40, recessed feature 90 improve the performance of FBAR 70, resulting in improved noise reduction and improved resonator quality factor Q of FBAR 70.
[0042] FIG. 10 illustrates a cross-sectional view of FBAR 70 in accordance with an alternative embodiment of the present invention. FBAR 70 is essentially the same as that illustrated in FIG. 9 , and includes substrate 72, depression 74, first electrode 76, piezoelectric (PZ) layer 78, second electrode 80, and passivation layer 82. In addition, however, FBAR 70 illustrated in FIG. 10 , has fill material 91 inserted in recessed feature 90, which is illustrated in FIG. 9 . Fill material 91 inserted in recessed feature 90 can further improve the performance of FBAR 70, resulting in improved insertion loss and improved resonator quality factor Q of FBAR 70. In addition, fill material 91 inserted in recessed feature 90 of passivation layer 80 affect mass-loading of the resonator in local regions of FBAR 70. This in turn alters the resonant behavior in that local region. With the correct size and amount of material absent or present, the overall device performance can be altered.
[0043] In one embodiment, fill material 91 is that same material as that used for second electrode 80. In that case, fill material 91 will have different dispersion characteristics than will the remaining material of PZ layer 78, which in one case is AlN. Adding this material with differing dispersion characteristics can improve insertion loss and improve the resonator quality factor Q of FBAR 70. For example, fill material 91 can be made of Mo material just as first and second electrodes 76 and 80, or any metal such as Pt, W, Cu, Al, Au, or Ag. In alternative embodiments, fill material 91 could also be made of other materials, such as polyimide, BCB, SiO2, Si3N4, or other dielectrics, AlN, ZnO, LiNbO3, PZT, LiTaO3, Al2O3, or other piezoelectric materials.
[0044] FIG. 11 illustrates a cross-sectional view of FBAR 40 in accordance with another embodiment. FBAR 40 includes substrate 42, acoustic mirror 1101, first electrode 46, piezoelectric (PZ) layer 48, second electrode 50, and passivation layer 52. Typically, contacts (not illustrated in FIG. 11 ) are coupled to first and second electrodes 46 and electrode 50. The contacts facilitate connecting first and second electrodes 46 and 50 to a voltage source. First electrode 46, PZ layer 48, second electrode 50, and passivation layer 52 collectively form FBAR membrane 53. The acoustic mirror 1101 may be one of a variety of types within the purview of one of ordinary skill in the art.
[0045] The process for fabricating FBARs 40 and 70 may be accomplished in a variety of ways consistent with the present inventions. In one embodiment, FBAR 40 or 70 is built with a standard flow up to a regular field etch step, the FBAR is masked for the etch feature, then etched, then the resist mask is stripped away and then the regular field etch is finalized. In this case, field etch refers to etch of the main piezoelectric layer.
[0046] In another embodiment, FBAR 40 or 70 is built with a standard flow up to a regular field etch step, the FBAR is masked for the etch feature, then etched, then the resist mask is stripped away. Then a pattern lift-off mask is put down, the fill material is deposited in the etch feature, the lift-off mask is stripped and then the regular field etch is finalized.
[0047] In another embodiment, FBAR 40 or 70 is built with a standard flow up to a regular field etch step, the FBAR is masked for the etch feature, then etched, then the resist mask is stripped away. Then fill material is deposited in the etch feature, a etch mask for the fill material is put down, the fill material is etched, the etch mask is stripped, and then the regular field etch is finalized.
[0048] The recess in FBAR 70 can be made with an etch step, but can also be generated by a lift-off process. Furthermore, the recess in FBAR 70 can in some instances be made before the field etch.
[0049] Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.
Claims
What is claimed is:
1. An acoustic resonator comprising:
a substrate;
a first electrode adjacent the substrate;
a piezoelectric layer adjacent the first electrode;
a trench provided in the piezoelectric layer, wherein the trench is configured to reduce energy loss in the acoustic resonator;
a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge; and
an acoustic mirror is disposed in the substrate, wherein the first electrode spans the acoustic mirror.
2. The acoustic resonator of claim 1 further including a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge.
3. The acoustic resonator of claim 1, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.
4. The acoustic resonator of claim 3, wherein the trench extends around a substantial portion of the perimeter of the second electrode.
5. The acoustic resonator of claim 3 wherein the trench is offset from the edge of second electrode by zero to 10s of microns.
6. The acoustic resonator of claim 1 further including fill material in the trench of the piezoelectric layer.
7. The acoustic resonator of claim 6, wherein the second electrode comprises a material that is the same as the fill material in the trench.
8. The acoustic resonator of claim 6, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO2, Si3N4, AlN, ZnO, LiNbO3, PZT, LiTaO3, and Al2O3.
9. The acoustic resonator of claim 1 wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.
10. An acoustic resonator comprising:
a substrate having a first surface; a first electrode adjacent the first surface of the substrate;
a layer of piezoelectric material adjacent the first electrode;
a trench provided in the layer of piezoelectric material;
a second electrode adjacent the layer of piezoelectric material, the second electrode lying in a first plane and having an edge; and
a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge; wherein the trench is configured to reduce energy loss in the acoustic resonator.
11. The acoustic resonator of claim 10 wherein a depression is formed in the first surface of the substrate and wherein the first electrode spans the depression.
12. The acoustic resonator of claim 10 wherein an acoustic mirror is formed in the first surface of the substrate and wherein the first electrode spans the acoustic mirror.
13. The acoustic resonator of claim 10 further including fill material in the trench of the layer of piezoelectric material.
14. The acoustic resonator of claim 13, wherein the second electrode comprises a material that is the same as the fill material in the trench.
15. The acoustic resonator of claim 13 wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO2, Si3N4, AlN, ZnO, LiNbO3, PZT, LiTaO3, and Al2O3.
16. The acoustic resonator of claim 10, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.
17. An acoustic resonator comprising:
a substrate;
a first electrode adjacent the substrate;
a piezoelectric layer adjacent the first electrode;
a trench provided in the piezoelectric layer; and
a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge, wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.
18. An acoustic resonator as claimed in claim 17, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.
19. An acoustic resonator comprising:
a substrate;
a first electrode adjacent the substrate;
a piezoelectric layer adjacent the first electrode;
a trench provided in the piezoelectric layer;
fill material in the trench of the piezoelectric layer; and
a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge.
20. An acoustic resonator as claimed in claim 19, wherein the second electrode comprises a material that is the same as the fill material in the trench.
21. An acoustic resonator as claimed in claim 19, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO2, Si3N4, AlN, ZnO, LiNbO3, PZT, LiTaO3, and Al2O3.
22. An acoustic resonator comprising:
a substrate having a first surface; a first electrode adjacent the first surface of the substrate;
a layer of piezoelectric material adjacent the first electrode; a second electrode adjacent the layer of piezoelectric material, the second electrode lying in a first plane and having an edge; and
a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge; wherein the layer of piezoelectric material comprises a trench adjacent the edge of the second electrode; and
fill material in the trench of the layer of piezoelectric material.
23. An acoustic resonator as claimed in claim 22, wherein the second electrode comprises a material that is the same as the fill material in the trench.
24. An acoustic resonator as claimed in claim 22, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO2, Si3N4, AlN, ZnO, LiNbO3, PZT, LiTaO3, and Al2O3.
25. An acoustic resonator comprising:
a substrate;
a first electrode adjacent the substrate;
a piezoelectric layer adjacent the first electrode;
a trench provided in the piezoelectric layer, wherein the trench is configured to reduce energy loss in the acoustic resonator;
a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge; and
a depression disposed in the substrate, wherein the first electrode spans the depression.
26. The acoustic resonator of claim 25 further comprising a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge.
27. The acoustic resonator of claim 25, wherein the trench in the piezoelectric layer is disposed outside the edge of the second electrode.
28. The acoustic resonator of claim 27, wherein the trench extends around a substantial portion of the perimeter of the second electrode.
29. The acoustic resonator of claim 27, wherein the trench is offset from the edge of second electrode by zero microns to less than 100 microns.
30. The acoustic resonator of claim 25 further comprising fill material disposed in the trench of the piezoelectric layer.
31. The acoustic resonator of claim 30, wherein the second electrode comprises a material that is the same as the fill material in the trench.
32. The acoustic resonator of claim 30, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO2, Si3N4, AlN, ZnO, LiNbO3, PZT, LiTaO3, and Al2O3.
33. The acoustic resonator of claim 25, wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.
Patent Citations (411)
| Patent | Date | Inventor | Cited By |
|---|---|---|---|
| US3174122(A) | 1965-03-01 | Fowler et al. | Applicant |
| US3189851(A) | 1965-06-01 | Fowler | Applicant |
| US3321648(A) | 1967-05-01 | Kolm | Applicant |
| US3422371(A) | 1969-01-01 | Poirier et al. | Applicant |
| US3568108(A) | 1971-03-01 | Poirier et al. | Applicant |
| US3582839(A) | 1971-06-01 | Pim et al. | Applicant |
| US3590287(A) | 1971-06-01 | Berlincourt et al. | Applicant |
| US3610969(A) | 1971-10-01 | Clawson et al. | Applicant |
| US3826931(A) | 1974-07-01 | Hammond | Applicant |
| US3845402(A) | 1974-10-01 | Nupp | Applicant |
| US4084217(A) | 1978-04-01 | Brandli et al. | Applicant |
| US4172277(A) | 1979-10-01 | Pinson | Applicant |
| US4272742(A) | 1981-06-01 | Lewis | Applicant |
| US4281299(A) | 1981-07-01 | Newbold | Applicant |
| US4320365(A) | 1982-03-01 | Black et al. | Applicant |
| US4344004(A) | 1982-08-01 | Okubo | Applicant |
| US4355408(A) | 1982-10-01 | Scarrott | Applicant |
| US4456850(A) | 1984-06-01 | Inoue et al. | Applicant |
| US4529904(A) | 1985-07-01 | Hattersley | Applicant |
| US4608541(A) | 1986-08-01 | Moriwaki et al. | Applicant |
| US4625138(A) | 1986-11-01 | Ballato | Applicant |
| US4640756(A) | 1987-02-01 | Wang et al. | Applicant |
| US4719383(A) | 1988-01-01 | Wang et al. | Applicant |
| US4769272(A) | 1988-09-01 | Byrne et al. | Applicant |
| US4798990(A) | 1989-01-01 | Henoch | Applicant |
| US4819215(A) | 1989-04-01 | Yokoyama et al. | Applicant |
| US4836882(A) | 1989-06-01 | Ballato | Applicant |
| US4841429(A) | 1989-06-01 | Mcclanahan et al. | Applicant |
| US4906840(A) | 1990-03-01 | Zdeblick et al. | Applicant |
| US5048036(A) | 1991-09-01 | Scifres et al. | Applicant |
| US5048038(A) | 1991-09-01 | Brennan et al. | Applicant |
| US5066925(A) | 1991-11-01 | Freitag | Applicant |
| US5075641(A) | 1991-12-01 | Weber et al. | Applicant |
| US5111157(A) | 1992-05-01 | Komiak | Applicant |
| US5118982(A) | 1992-06-01 | Inoue et al. | Applicant |
| US5129132(A) | 1992-07-01 | Zdeblick et al. | Applicant |
| US5162691(A) | 1992-11-01 | Mariani et al. | Applicant |
| US5166646(A) | 1992-11-01 | Avanic et al. | Applicant |
| US5185589(A) | 1993-02-01 | Krishnaswamy et al. | Applicant |
| US5214392(A) | 1993-05-01 | Kobayashi et al. | Applicant |
| US5233259(A) | 1993-08-01 | Krishnaswamy et al. | Applicant |
| US5241209(A) | 1993-08-01 | Sasaki | Applicant |
| US5241456(A) | 1993-08-01 | Marcinkiewicz et al. | Applicant |
| US5262347(A) | 1993-11-01 | Sands | Applicant |
| US5270492(A) | 1993-12-01 | Fukui | Applicant |
| US5294898(A) | 1994-03-01 | Dworsky et al. | Applicant |
| US5361077(A) | 1994-11-01 | Weber | Applicant |
| US5382930(A) | 1995-01-01 | Stokes et al. | Applicant |
| US5384808(A) | 1995-01-01 | Van Brunt et al. | Applicant |
| US5448014(A) | 1995-09-01 | Kong et al. | Applicant |
| US5465725(A) | 1995-11-01 | Seyed-Bolorforosh | Applicant |
| US5475351(A) | 1995-12-01 | Uematsu | Applicant |
| US5548189(A) | 1996-08-01 | Williams | Applicant |
| US5587620(A) | 1996-12-01 | Ruby et al. | Applicant |
| US5589858(A) | 1996-12-01 | Kadowaki et al. | Applicant |
| US5594705(A) | 1997-01-01 | Connor et al. | Applicant |
| US5603324(A) | 1997-02-01 | Oppelt et al. | Applicant |
| US5633574(A) | 1997-05-01 | Sage | Applicant |
| US5671242(A) | 1997-09-01 | Takiguchi et al. | Applicant |
| US5692279(A) | 1997-12-01 | Mang et al. | Applicant |
| US5704037(A) | 1997-12-01 | Chen | Applicant |
| US5705877(A) | 1998-01-01 | Shimada | Applicant |
| US5714917(A) | 1998-02-01 | Ella | Applicant |
| US5729008(A) | 1998-03-01 | Blalock et al. | Applicant |
| US5789845(A) | 1998-08-01 | Wadaka et al. | Applicant |
| US5835142(A) | 1998-11-01 | Nakamura et al. | Applicant |
| US5853601(A) | 1998-12-01 | Krishaswamy et al. | Applicant |
| US5864261(A) | 1999-01-01 | Weber | Applicant |
| US5866969(A) | 1999-02-01 | Shimada et al. | Applicant |
| US5872493(A) | 1999-02-01 | Ella | Applicant |
| US5873153(A) | 1999-02-01 | Ruby et al. | Applicant |
| US5873154(A) | 1999-02-01 | Ylilammi et al. | Applicant |
| US5894184(A) | 1999-04-01 | Furuhashi et al. | Applicant |
| US5894647(A) | 1999-04-01 | Lakin | Applicant |
| US5910756(A) | 1999-06-01 | Ella | Applicant |
| US5932953(A) | 1999-08-01 | Drees et al. | Applicant |
| US5936150(A) | 1999-08-01 | Kobrin et al. | Applicant |
| US5953479(A) | 1999-09-01 | Zhou et al. | Applicant |
| US5955926(A) | 1999-09-01 | Uda et al. | Applicant |
| US5962787(A) | 1999-10-01 | Okada et al. | Applicant |
| US5969463(A) | 1999-10-01 | Tomita | Applicant |
| US5982297(A) | 1999-11-01 | Welle | Applicant |
| US6001664(A) | 1999-12-01 | Swirhun et al. | Applicant |
| US6016052(A) | 2000-01-01 | Vaughn | Applicant |
| US6040962(A) | 2000-03-01 | Kanazawa | Applicant |
| US6051907(A) | 2000-04-01 | Ylilammi | Applicant |
| US6060818(A) | 2000-05-01 | Ruby et al. | Applicant |
| US6087198(A) | 2000-07-01 | Panasik | Applicant |
| US6090687(A) | 2000-07-01 | Merchant et al. | Applicant |
| US6107721(A) | 2000-08-01 | Lakin | Applicant |
| US6111341(A) | 2000-08-01 | Hirama | Applicant |
| US6111480(A) | 2000-08-01 | Iyama et al. | Applicant |
| US6118181(A) | 2000-09-01 | Merchant et al. | Applicant |
| US6124678(A) | 2000-09-01 | Bishop et al. | Applicant |
| US6124756(A) | 2000-09-01 | Yaklin et al. | Applicant |
| US6131256(A) | 2000-10-01 | Dydyk | Applicant |
| US6150703(A) | 2000-11-01 | Cushman et al. | Applicant |
| US6187513(B1) | 2001-02-01 | Katakura | Applicant |
| US6198208(B1) | 2001-03-01 | Yano et al. | Applicant |
| US6215375(B1) | 2001-04-01 | Larson, III et al. | Applicant |
| US6219032(B1) | 2001-04-01 | Rosenberg et al. | Applicant |
| US6219263(B1) | 2001-04-01 | Wuidart | Applicant |
| US6228675(B1) | 2001-05-01 | Ruby et al. | Applicant |
| US6229247(B1) | 2001-05-01 | Bishop | Applicant |
| US6252229(B1) | 2001-06-01 | Hays et al. | Applicant |
| US6262600(B1) | 2001-07-01 | Haigh et al. | Applicant |
| US6262637(B1) | 2001-07-01 | Bradley et al. | Applicant |
| US6263735(B1) | 2001-07-01 | Nakatani et al. | Applicant |
| US6265246(B1) | 2001-07-01 | Ruby et al. | Applicant |
| US6278342(B1) | 2001-08-01 | Ella | Applicant |
| US6292336(B1) | 2001-09-01 | Horng | Applicant |
| US6307447(B1) | 2001-10-01 | Barber et al. | Applicant |
| US6307761(B1) | 2001-10-01 | Nakagawa | Applicant |
| US6335548(B1) | 2002-01-01 | Roberts et al. | Applicant |
| US6355498(B1) | 2002-03-01 | Chan et al. | Applicant |
| US6366006(B1) | 2002-04-01 | Boyd | Applicant |
| US6376280(B1) | 2002-04-01 | Ruby et al. | Applicant |
| US6377137(B1) | 2002-04-01 | Ruby | Applicant |
| US6384697(B1) | 2002-05-01 | Ruby | Applicant |
| US6396200(B2) | 2002-05-01 | Misu et al. | Applicant |
| US6407649(B1) | 2002-06-01 | Tikka et al. | Applicant |
| US6414569(B1) | 2002-07-01 | Nakafuku | Applicant |
| US6420820(B1) | 2002-07-01 | Larson, III | Applicant |
| US6424237(B1) | 2002-07-01 | Ruby et al. | Applicant |
| US6429511(B2) | 2002-08-01 | Ruby et al. | Applicant |
| US6434030(B1) | 2002-08-01 | Rehm et al. | Applicant |
| US6437482(B1) | 2002-08-01 | Shibata | Applicant |
| US6441539(B1) | 2002-08-01 | Kitamura et al. | Applicant |
| US6441702(B1) | 2002-08-01 | Ella et al. | Applicant |
| US6462631(B2) | 2002-10-01 | Bradley et al. | Applicant |
| US6466105(B1) | 2002-10-01 | Lobl et al. | Applicant |
| US6466418(B1) | 2002-10-01 | Horng | Applicant |
| US6469597(B2) | 2002-10-01 | Ruby et al. | Applicant |
| US6469909(B2) | 2002-10-01 | Simmons | Applicant |
| US6472954(B1) | 2002-10-01 | Ruby et al. | Applicant |
| US6476536(B1) | 2002-11-01 | Pensala | Applicant |
| US6479320(B1) | 2002-11-01 | Gooch | Applicant |
| US6483229(B2) | 2002-11-01 | Larson, III et al. | Applicant |
| US6486751(B1) | 2002-11-01 | Barber et al. | Applicant |
| US6489688(B1) | 2002-12-01 | Baumann et al. | Applicant |
| US6492883(B2) | 2002-12-01 | Liang et al. | Applicant |
| US6496085(B2) | 2002-12-01 | Ella et al. | Applicant |
| US6498604(B1) | 2002-12-01 | Jensen | Applicant |
| US6507983(B1) | 2003-01-01 | Ruby et al. | Applicant |
| US6515558(B1) | 2003-02-01 | Ylilammi | Applicant |
| US6518860(B2) | 2003-02-01 | Ella et al. | Applicant |
| US6525996(B1) | 2003-02-01 | Miyazawa | Applicant |
| US6528344(B2) | 2003-03-01 | Kang | Applicant |
| US6530515(B1) | 2003-03-01 | Glenn et al. | Applicant |
| US6534900(B2) | 2003-03-01 | Aigner et al. | Applicant |
| US6542055(B1) | 2003-04-01 | Frank et al. | Applicant |
| US6548942(B1) | 2003-04-01 | Panasik | Applicant |
| US6548943(B2) | 2003-04-01 | Kaitila et al. | Applicant |
| US6549394(B1) | 2003-04-01 | Williams | Applicant |
| US6550664(B2) | 2003-04-01 | Bradley et al. | Applicant |
| US6559487(B1) | 2003-05-01 | Kang et al. | Applicant |
| US6559530(B2) | 2003-05-01 | Hinzel et al. | Applicant |
| US6564448(B1) | 2003-05-01 | Oura et al. | Examiner |
| US6566956(B2) | 2003-05-01 | Ohnishi et al. | Applicant |
| US6566979(B2) | 2003-05-01 | Larson et al. | Applicant |
| US6580159(B1) | 2003-06-01 | Fusaro et al. | Applicant |
| US6583374(B2) | 2003-06-01 | Knieser et al. | Applicant |
| US6583688(B2) | 2003-06-01 | Klee et al. | Applicant |
| US6593870(B2) | 2003-07-01 | Dummermuth et al. | Applicant |
| US6594165(B2) | 2003-07-01 | Duerbaum et al. | Applicant |
| US6600390(B2) | 2003-07-01 | Frank | Applicant |
| US6601276(B2) | 2003-08-01 | Barber | Applicant |
| US6603182(B1) | 2003-08-01 | Low et al. | Applicant |
| US6617249(B2) | 2003-09-01 | Ruby et al. | Applicant |
| US6617750(B2) | 2003-09-01 | Dummermuth et al. | Applicant |
| US6617751(B2) | 2003-09-01 | Sunwoo et al. | Applicant |
| US6621137(B1) | 2003-09-01 | Ma et al. | Applicant |
| US6630753(B2) | 2003-10-01 | Malik et al. | Applicant |
| US6635509(B1) | 2003-10-01 | Ouellet | Applicant |
| US6639872(B1) | 2003-10-01 | Rein | Applicant |
| US6651488(B2) | 2003-11-01 | Larson et al. | Applicant |
| US6657363(B1) | 2003-12-01 | Aigner | Applicant |
| US6668618(B2) | 2003-12-01 | Larson et al. | Applicant |
| US6670866(B2) | 2003-12-01 | Ella et al. | Applicant |
| US6693500(B2) | 2004-02-01 | Yang et al. | Applicant |
| US6710508(B2) | 2004-03-01 | Ruby et al. | Applicant |
| US6710681(B2) | 2004-03-01 | Figueredo et al. | Applicant |
| US6713314(B2) | 2004-03-01 | Wong et al. | Applicant |
| US6714102(B2) | 2004-03-01 | Ruby et al. | Applicant |
| US6720844(B1) | 2004-04-01 | Lakin | Applicant |
| US6720846(B2) | 2004-04-01 | Iwashita et al. | Applicant |
| US6724266(B2) | 2004-04-01 | Piazza et al. | Applicant |
| US6738267(B1) | 2004-05-01 | Navas et al. | Applicant |
| US6774746(B2) | 2004-08-01 | Whatmore et al. | Applicant |
| US6777263(B1) | 2004-08-01 | Gan et al. | Applicant |
| US6787048(B2) | 2004-09-01 | Bradley et al. | Applicant |
| US6788170(B1) | 2004-09-01 | Kaitila et al. | Applicant |
| US6803835(B2) | 2004-10-01 | Frank | Applicant |
| US6812619(B1) | 2004-11-01 | Kaitila et al. | Applicant |
| US6828713(B2) | 2004-12-01 | Bradley et al. | Applicant |
| US6842088(B2) | 2005-01-01 | Yamada et al. | Applicant |
| US6842089(B2) | 2005-01-01 | Lee | Applicant |
| US6853534(B2) | 2005-02-01 | Williams | Applicant |
| US6873065(B2) | 2005-03-01 | Haigh et al. | Applicant |
| US6873529(B2) | 2005-03-01 | Ikuta | Applicant |
| US6874211(B2) | 2005-04-01 | Bradley et al. | Examiner |
| US6874212(B2) | 2005-04-01 | Larson, III | Applicant |
| US6888424(B2) | 2005-05-01 | Takeuchi et al. | Applicant |
| US6900705(B2) | 2005-05-01 | Nakamura et al. | Applicant |
| US6903452(B2) | 2005-06-01 | Ma et al. | Applicant |
| US6906451(B2) | 2005-06-01 | Yamada | Applicant |
| US6911708(B2) | 2005-06-01 | Park | Examiner |
| US6917261(B2) | 2005-07-01 | Unterberger | Applicant |
| US6924583(B2) | 2005-08-01 | Lin et al. | Applicant |
| US6924717(B2) | 2005-08-01 | Ginsburg et al. | Applicant |
| US6927651(B2) | 2005-08-01 | Larson, III et al. | Applicant |
| US6936928(B2) | 2005-08-01 | Hedler et al. | Applicant |
| US6936954(B2) | 2005-08-01 | Peczalski | Applicant |
| US6943648(B2) | 2005-09-01 | Maiz et al. | Applicant |
| US6946928(B2) | 2005-09-01 | Larson et al. | Applicant |
| US6954121(B2) | 2005-10-01 | Bradley et al. | Examiner |
| US6963257(B2) | 2005-11-01 | Ella et al. | Applicant |
| US6970365(B2) | 2005-11-01 | Turchi | Applicant |
| US6975183(B2) | 2005-12-01 | Aigner et al. | Examiner |
| US6977563(B2) | 2005-12-01 | Komuro et al. | Applicant |
| US6985052(B2) | 2006-01-01 | Tikka | Applicant |
| US6987433(B2) | 2006-01-01 | Larson et al. | Applicant |
| US6989723(B2) | 2006-01-01 | Komuro et al. | Applicant |
| US6998940(B2) | 2006-02-01 | Metzger | Applicant |
| US7002437(B2) | 2006-02-01 | Takeuchi et al. | Applicant |
| US7019604(B2) | 2006-03-01 | Gotoh et al. | Applicant |
| US7019605(B2) | 2006-03-01 | Larson et al. | Applicant |
| US7026876(B1) | 2006-04-01 | Esfandiari et al. | Applicant |
| US7053456(B2) | 2006-05-01 | Matsuo | Applicant |
| US7057476(B2) | 2006-06-01 | Hwu | Examiner |
| US7057478(B2) | 2006-06-01 | Korden et al. | Applicant |
| US7064606(B2) | 2006-06-01 | Louis | Applicant |
| US7084553(B2) | 2006-08-01 | Ludwiczak | Applicant |
| US7091649(B2) | 2006-08-01 | Larson | Applicant |
| US7098758(B2) | 2006-08-01 | Wang et al. | Examiner |
| US7102460(B2) | 2006-09-01 | Schmidhammer et al. | Applicant |
| US7128941(B2) | 2006-10-01 | Lee | Applicant |
| US7138889(B2) | 2006-11-01 | Lakin | Applicant |
| US7161448(B2) | 2007-01-01 | Feng et al. | Applicant |
| US7170215(B2) | 2007-01-01 | Namba et al. | Examiner |
| US7173504(B2) | 2007-02-01 | Larson | Applicant |
| US7187254(B2) | 2007-03-01 | Su et al. | Examiner |
| US7209374(B2) | 2007-04-01 | Noro | Applicant |
| US7212083(B2) | 2007-05-01 | Inoue et al. | Applicant |
| US7212085(B2) | 2007-05-01 | Wu | Applicant |
| US7230509(B2) | 2007-06-01 | Stoemmer | Applicant |
| US7230511(B2) | 2007-06-01 | Onishi et al. | Applicant |
| US7242270(B2) | 2007-07-01 | Larson et al. | Applicant |
| US7259498(B2) | 2007-08-01 | Nakatsuka et al. | Applicant |
| US7275292(B2) | 2007-10-01 | Ruby et al. | Applicant |
| US7276994(B2) | 2007-10-01 | Takeuchi et al. | Applicant |
| US7280007(B2) | 2007-10-01 | Feng et al. | Applicant |
| US7281304(B2) | 2007-10-01 | Kim et al. | Applicant |
| US7294919(B2) | 2007-11-01 | Bai | Applicant |
| US7301258(B2) | 2007-11-01 | Tanaka | Examiner |
| US7310861(B2) | 2007-12-01 | Aigner et al. | Applicant |
| US7332985(B2) | 2008-02-01 | Laqrson et al. | Applicant |
| US7367095(B2) | 2008-05-01 | Larson, III et al. | Applicant |
| US7368857(B2) | 2008-05-01 | Tanaka | Examiner |
| US7369013(B2) | 2008-05-01 | Fazzio et al. | Applicant |
| US7388318(B2) | 2008-06-01 | Yamada et al. | Applicant |
| US7388454(B2) | 2008-06-01 | Ruby et al. | Applicant |
| US7388455(B2) | 2008-06-01 | Larson, III | Applicant |
| US7408428(B2) | 2008-08-01 | Larson, III | Applicant |
| US7414349(B2) | 2008-08-01 | Sasaki | Applicant |
| US7414495(B2) | 2008-08-01 | Iwasaki et al. | Applicant |
| US7423503(B2) | 2008-09-01 | Larson, III et al. | Applicant |
| US7425787(B2) | 2008-09-01 | Larson, III | Applicant |
| US7439824(B2) | 2008-10-01 | Aigner | Applicant |
| US7545532(B2) | 2009-06-01 | Muramoto | Applicant |
| US2002/0000646(A1) | 2002-01-01 | Gooch et al. | Applicant |
| US2002/0019079(A1) | 2002-02-01 | Kawai | Applicant |
| US2002/0030424(A1) | 2002-03-01 | Iwata | Examiner |
| US2002/0063497(A1) | 2002-05-01 | Panasik | Applicant |
| US2002/0070463(A1) | 2002-06-01 | Chang et al. | Applicant |
| US2002/0121944(A1) | 2002-09-01 | Larson, III et al. | Applicant |
| US2002/0121945(A1) | 2002-09-01 | Ruby et al. | Applicant |
| US2002/0126517(A1) | 2002-09-01 | Matsukawa et al. | Applicant |
| US2002/0140520(A1) | 2002-10-01 | Hikita et al. | Applicant |
| US2002/0152803(A1) | 2002-10-01 | Larson, III et al. | Applicant |
| US2002/0190814(A1) | 2002-12-01 | Yamada et al. | Applicant |
| US2003/0001251(A1) | 2003-01-01 | Cheever et al. | Applicant |
| US2003/0006502(A1) | 2003-01-01 | Karpman | Applicant |
| US2003/0011285(A1) | 2003-01-01 | Ossmann | Applicant |
| US2003/0011446(A1) | 2003-01-01 | Bradley | Applicant |
| US2003/0051550(A1) | 2003-03-01 | Nguyen et al. | Applicant |
| US2003/0087469(A1) | 2003-05-01 | Ma | Applicant |
| US2003/0102776(A1) | 2003-06-01 | Takeda et al. | Applicant |
| US2003/0111439(A1) | 2003-06-01 | Fetter et al. | Applicant |
| US2003/0128081(A1) | 2003-07-01 | Ella et al. | Applicant |
| US2003/0132493(A1) | 2003-07-01 | Kang et al. | Applicant |
| US2003/0132809(A1) | 2003-07-01 | Senthilkumar et al. | Applicant |
| US2003/0141946(A1) | 2003-07-01 | Ruby et al. | Applicant |
| US2003/0179053(A1) | 2003-09-01 | Aigner et al. | Applicant |
| US2003/0205948(A1) | 2003-11-01 | Lin et al. | Applicant |
| US2004/0016995(A1) | 2004-01-01 | Kuo et al. | Applicant |
| US2004/0017130(A1) | 2004-01-01 | Wang et al. | Applicant |
| US2004/0056735(A1) | 2004-03-01 | Nomura et al. | Applicant |
| US2004/0092234(A1) | 2004-05-01 | Pohjonen | Applicant |
| US2004/0124952(A1) | 2004-07-01 | Tikka | Applicant |
| US2004/0129079(A1) | 2004-07-01 | Kato et al. | Applicant |
| US2004/0150293(A1) | 2004-08-01 | Unterberger | Applicant |
| US2004/0150296(A1) | 2004-08-01 | Park et al. | Applicant |
| US2004/0166603(A1) | 2004-08-01 | Carley et al. | Applicant |
| US2004/0195937(A1) | 2004-10-01 | Matsubara et al. | Applicant |
| US2004/0212458(A1) | 2004-10-01 | Lee | Applicant |
| US2004/0257171(A1) | 2004-12-01 | Park et al. | Applicant |
| US2004/0257172(A1) | 2004-12-01 | Schmidhammer et al. | Applicant |
| US2004/0263287(A1) | 2004-12-01 | Ginsburg et al. | Applicant |
| US2005/0012570(A1) | 2005-01-01 | Korden et al. | Applicant |
| US2005/0012716(A1) | 2005-01-01 | Mikulin et al. | Applicant |
| US2005/0023931(A1) | 2005-02-01 | Bouche et al. | Applicant |
| US2005/0030126(A1) | 2005-02-01 | Inoue et al. | Applicant |
| US2005/0036604(A1) | 2005-02-01 | Scott et al. | Applicant |
| US2005/0057117(A1) | 2005-03-01 | Nakatsuka et al. | Applicant |
| US2005/0057324(A1) | 2005-03-01 | Onishi et al. | Examiner |
| US2005/0068124(A1) | 2005-03-01 | Stoemmer | Applicant |
| US2005/0093396(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0093653(A1) | 2005-05-01 | Larson, III | Applicant |
| US2005/0093654(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0093655(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0093657(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0093658(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0093659(A1) | 2005-05-01 | Larson et al. | Applicant |
| US2005/0104690(A1) | 2005-05-01 | Larson | Applicant |
| US2005/0110598(A1) | 2005-05-01 | Larson, III | Applicant |
| US2005/0128030(A1) | 2005-06-01 | Larson et al. | Applicant |
| US2005/0140466(A1) | 2005-06-01 | Larson, III et al. | Applicant |
| US2005/0167795(A1) | 2005-08-01 | Higashi | Applicant |
| US2005/0193507(A1) | 2005-09-01 | Ludwiczak | Applicant |
| US2005/0206271(A1) | 2005-09-01 | Higuchi et al. | Applicant |
| US2005/0206483(A1) | 2005-09-01 | Pashby et al. | Applicant |
| US2005/0218488(A1) | 2005-10-01 | Matsuo | Applicant |
| US2006/0071736(A1) | 2006-04-01 | Ruby et al. | Applicant |
| US2006/0081048(A1) | 2006-04-01 | Mikado et al. | Applicant |
| US2006/0087199(A1) | 2006-04-01 | Larson et al. | Applicant |
| US2006/0103492(A1) | 2006-05-01 | Feng et al. | Applicant |
| US2006/0119453(A1) | 2006-06-01 | Fattinger et al. | Applicant |
| US2006/0125489(A1) | 2006-06-01 | Feucht et al. | Applicant |
| US2006/0132262(A1) | 2006-06-01 | Fazzio et al. | Applicant |
| US2006/0164183(A1) | 2006-07-01 | Tikka | Applicant |
| US2006/0185139(A1) | 2006-08-01 | Larson, III et al. | Applicant |
| US2006/0197411(A1) | 2006-09-01 | Hoen et al. | Applicant |
| US2006/0238070(A1) | 2006-10-01 | Costa et al. | Applicant |
| US2006/0284707(A1) | 2006-12-01 | Larson et al. | Applicant |
| US2006/0290446(A1) | 2006-12-01 | Aigner et al. | Applicant |
| US2007/0037311(A1) | 2007-02-01 | Izumi et al. | Applicant |
| US2007/0080759(A1) | 2007-04-01 | Jamneala et al. | Applicant |
| US2007/0084964(A1) | 2007-04-01 | John et al. | Applicant |
| US2007/0085447(A1) | 2007-04-01 | Larson | Applicant |
| US2007/0085631(A1) | 2007-04-01 | Larson et al. | Applicant |
| US2007/0085632(A1) | 2007-04-01 | Larson et al. | Applicant |
| US2007/0086080(A1) | 2007-04-01 | Larson et al. | Applicant |
| US2007/0086274(A1) | 2007-04-01 | Nishimura et al. | Applicant |
| US2007/0090892(A1) | 2007-04-01 | Larson | Applicant |
| US2007/0170815(A1) | 2007-07-01 | Unkrich | Applicant |
| US2007/0171002(A1) | 2007-07-01 | Unkrich | Applicant |
| US2007/0176710(A1) | 2007-08-01 | Jamneala et al. | Applicant |
| US2007/0205850(A1) | 2007-09-01 | Jamneala et al. | Applicant |
| US2007/0279153(A1) | 2007-12-01 | Ruby | Applicant |
| US2008/0055020(A1) | 2008-03-01 | Handtmann et al. | Applicant |
| US2008/0297279(A1) | 2008-12-01 | Thalhammer et al. | Applicant |
| US2008/0297280(A1) | 2008-12-01 | Thalhammer et al. | Applicant |
| DE10160617 | 2003-06-01 | Applicant | |
| EP231892 | 1987-08-01 | Applicant | |
| EP637875 | 1995-02-01 | Applicant | |
| EP689254 | 1995-06-01 | Applicant | |
| EP865157 | 1998-09-01 | Applicant | |
| EP880227 | 1998-11-01 | Applicant | |
| EP973256 | 2000-01-01 | Applicant | |
| EP1047189 | 2000-10-01 | Applicant | |
| EP1100196 | 2000-11-01 | Applicant | |
| EP1096259 | 2001-05-01 | Applicant | |
| EP1258990 | 2002-11-01 | Applicant | |
| EP1180494 | 2003-03-01 | Applicant | |
| EP1542362 | 2003-06-01 | Applicant | |
| EP1258989 | 2004-01-01 | Applicant | |
| EP1528674 | 2004-06-01 | Applicant | |
| EP1528675 | 2004-06-01 | Applicant | |
| EP1528677 | 2004-07-01 | Applicant | |
| EP1249932 | 2005-03-01 | Applicant | |
| EP1517443 | 2005-03-01 | Applicant | |
| EP1517444 | 2005-03-01 | Applicant | |
| EP1528676 | 2005-05-01 | Applicant | |
| EP1557945 | 2005-07-01 | Applicant | |
| EP1575165 | 2005-09-01 | Applicant | |
| GB1207974 | 1967-11-01 | Applicant | |
| GB2013343 | 1979-08-01 | Applicant | |
| GB2411239 | 2005-08-01 | Applicant | |
| GB2418791 | 2006-04-01 | Applicant | |
| GB2427773 | 2007-01-01 | Applicant | |
| JP61054686 | 1986-03-01 | Applicant | |
| JP6005944 | 1994-01-01 | Applicant | |
| JP2002217676 | 2002-08-01 | Applicant | |
| JP2003-124779 | 2003-04-01 | Examiner | |
| WO-98/16957 | 1998-04-01 | Applicant | |
| WO-01/06647 | 2001-01-01 | Applicant | |
| WO1/06647 | 2001-01-01 | Applicant | |
| WO1/99276(A1) | 2001-12-01 | Applicant | |
| WO2/103900 | 2002-12-01 | Applicant | |
| WO-03/030358 | 2003-04-01 | Applicant | |
| WO3/043188 | 2003-05-01 | Applicant | |
| WO-03/050950 | 2003-06-01 | Applicant | |
| WO-03/058809 | 2003-07-01 | Applicant | |
| WO-2004/034579 | 2004-04-01 | Applicant | |
| WO2004/051744 | 2004-06-01 | Applicant | |
| WO-2004/102688 | 2004-11-01 | Applicant | |
| WO-2005/043752 | 2005-05-01 | Applicant | |
| WO-2005/043753 | 2005-05-01 | Applicant | |
| WO-2005/043756 | 2005-05-01 | Applicant | |
| WO-2003/018788 | 2006-02-01 | Applicant |
Non-Patent Literature (60)
- Machine translation of JP 2003-124779 published Apr. 25, 2003.Examiner
- GB Search Report for Application No. GB052239338 mailed Jan. 9, 2006 (4 pgs.).Applicant
- GB Search Report for Application No. GB0525884.3 mailed Feb. 2, 2006 (4 pgs.).Applicant
- Auld, B.A., “Acoustic Resonators,” Acoustic Fields and Waves in Solids, Second Edition, vol. II, pp. 250-259 (1990).Applicant
- U.S. Appl. No. 10/971,169, filed Oct. 22, 2004, Larson III, John D., et al.Applicant
- Holzlohner, Ronald et al., “Accurate Calculation of Eye Diagrams and Bit Error Rates in Optical Transmission Systems Using Linearization”, Journal of Lightwave Technology, vol. 20, No. 3,, (Mar. 2002),pp. 389-400.Applicant
- Reinhardt, Alexandre et al., “Design of Coupled Resonator Filters Using Admittance and Scattering Matrices”, 2003 IEEE Ultrasonics Symposium, (May 3, 2003),1428-1431.Applicant
- Krishnaswamy, S.V. et al., “Film Bulk Acoustic Wave Resonator Technology”, (May 29, 1990),529-536.Applicant
- Lobl, H.P. et al., “Piezoelectric Materials For BAW Resonators And Filters”, 2001 IEEE Ultrasonics Symposium, (Jan. 1, 2001),807-811.Applicant
- Lakin, K.M. “Bulk Acoustic Wave Coupled Resonator Filters”, 2002 IEEE International Frequency Control Symposium and PDA Exhibition, (Jan. 2, 2002),8-14.Applicant
- Jung, Jun-Phil et al., “Experimental And Theoretical Investigation On The Relationship Between AIN Properties And AIN-Based FBAR Characteristics”, 2003 IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, (Sep. 3, 2003),779-784.Applicant
- Yang, C.M. et al., “Highly C Axis Oriented AIN Film Using MOCVD For 5GHx Band FBAR Filter”, 2003 IEEE Ultrasonics Symposium, (Oct. 5, 2003),pp. 170-173.Applicant
- Martin, Steven J., et al., “Development Of A Low Dielectric Constant Polymer For The Fabrication of Integrated Circuit Interconnect”, 12 Advanced Materials, (Dec. 23, 2000),1769-1778.Applicant
- Hadimioglu, B. et al., ““Polymer Films As Acoustic Matching Layers”.”, 1990 IEEE Ultrasonics Symposium Proceedings, vol. 3 PP., [Previously submitted as “Polymer Files As Acoustic Matching Layers, 1990 IEEE Ultrasonics Symposium Proceeding. vol. 4 pp. 1227-1340, Dec. 1990”. Considered by Examiner on Mar. 20, 2007,(Dec. 1990),1337-1340.Applicant
- “Search Report from corresponding application No.”, GB 0605779.8, (Aug. 23, 2006).Applicant
- “Examination Report from UK for application”, GB 0605971.1, (Aug. 24, 2006).Applicant
- “Examination report corresponding to application No.”, GB0605770.7, (Aug. 25, 2006).Applicant
- “Examination Report corresponding to application No.”, GB0605775.6, (Aug. 30, 2006).Applicant
- “Search report from corresponding application No.”, GB0620152.9, (Nov. 15, 2006).Applicant
- “Search report from corresponding application No.”, GB0620655.1, (Nov. 17, 2006).Applicant
- “Search report from corresponding application No.”, GB0620653.6, (Nov. 17, 2006).Applicant
- “Search Report from corresponding application No.”, GB0620657.7, (Nov. 23, 2006).Applicant
- Coombs, Clyde F., et al., “Electronic Instrument Handbook”, Second Edition, McGraw-Hill, Inc., (1995),pp. 5.1 to 5.29.Applicant
- “British Search Report Application No.”, 0605222.9, (Jul. 11, 2006).Applicant
- Tiersten, H. F., et al., “An Analysis of Thiskness-Extensional Trapped Energy Resonant Device Structures with Rectangular Electrodes in the Piezoelectric Thin Film on Silicon Configuration”, J. Appl. Phys. 54 (10), (Oct. 1983),5893-5910.Applicant
- “Search Report from corresponding application”, No. GB0605225.2, (Jun. 26, 2006).Applicant
- “Search Report for Great Britain Patent Application”, No. 0617742.2, (Mar. 29, 2007).Applicant
- “Search Report for Great Britain Patent Application”, No. 0617742.2, (Dec. 13, 2006).Applicant
- “Search Report in the Great Britian Patent Application”, No. 0619698.4, (Nov. 30, 2006).Applicant
- Ruby, R. et al., “The Effect of Perimeter Geometry on FBAR Resonator Electrical Performance”, Microwave Symposium Digest, 2005 IEEE MTT-S International, (Jun. 12, 2005),217-221.Applicant
- Schuessler, Hans H., “Ceramic Filters and Resonators”, Reprinted from IEEE Trans. Sonics Ultrason., vol. SU-21, (Oct. 1974),257-268.Applicant
- Fattinger, G. G., et al., “Coupled Bulk Acoustic Wave Resonator Filters: Key technology for single-to-balanced RF filters”, 0-7803-8331-1/4/W20.00; IEEE MTT-S Digest, (2004),927-929.Applicant
- Choi, Sungjin et al., “Design of Half-Bridge Piezo-Transformer Converters in the AC Adapter Applications”, IEEE 2005, 244-248.Applicant
- Li, Yunxiu et al., “AC-DC Converter with Worldwide Range Input Voltage by Series and Parallel Piezoelectric Transformer Connection”, 35th Annual IEEE Power Electronics Specialists Conference, (2004).Applicant
- Ivensky, Gregory et al., “A Comparison of Piezoelectric Transformer AC/DC Converters with Current Doubler and voltage Doubler Rectifiers”, IEEE Transactions on Power Electronics, vol. 19, No. 6., (Nov. 2004).Applicant
- Navas, J. et al., “Miniaturised Battery Charger using Piezoelectric Transformers”, IEEE, (2001),492-496.Applicant
- Jiang, Yimin et al., “A Novel Single-Phase Power Factor Correction Scheme”, IEEE, (1993),287-292.Applicant
- Lakin, K.M. “Coupled Resonator Filters”, 2002 IEEE Ultrasonics Symposium, (Mar. 2, 2002),901-908.Applicant
- Lakin, K.M. et al., “High Performance Stacked Crystal Filters for GPS and Wide Bandwidth Applications”, 2001 IEEE Ultrasonics Symposium, (Jan. 1, 2001),833-838.Applicant
- Sanchez, A.M. et al., “Mixed analytical and numerical design method for piezoelectric transformers”, IEEE,PESX, (Jun. 2003),841-846.Applicant
- Vasic, D et al., “A new MOSFET & IGBT Gate Drive Insulated by A Piezoelectric Transformer”, IEEE 32nd Annual Power Electronics SPecialists Conference, 2001 vol. 3, (Jun. 17-21, 2003),1479-1484.Applicant
- Vasic, D et al., “A New Mothod to Design Piezoelectic Transformer Uned to MOSFET & IGBT Drive Circuits”, IEEE 34th ANuual Power Electronics Specialists Conference, 2003 vol. 1, (Jun. 15-19, 2003),307-312.Applicant
- Ruby, R. C., “Micro-Machined Thin Film Bulk Acoustic Resonators”, Proc. IEEE 48th, Symposium on Frequency control, (1994),135-138.Applicant
- Larson III, J. D., et al., “Measurement of Effective Kt2q,RpRs vs. Temperature for Mo/AIN/Mo Resonators”, 2002 IEEE Ultrasonics Symposium, Munich, Germany, (Oct. 2002),915-919.Applicant
- Aoyama, T. et al., “Diffusion of Boron, Phosphorous, Arsenic and Antimony in Thermally Grown SiliconDioxide”, Fiujitsu Labs, J. Electromechanical Soc., vol. 146, No. 5 (1999),1879-1883.Applicant
- Parker, T. E., et al., “Temperature-Compensated Surface Acoustic-Wave Devices with SiO2 Film Overlays”, J. Appl. Physics, vol. 50, (1360-1369),Mar. 1979.Applicant
- Tsubbouchi, K. et al., “Zero Temperature coefficient Surface Acoustic Wave Devices using Epitaxial AIN Films”, IEEE Ultrasonic symposium, San Diaego, CA, 1082, (1982),240-245.Applicant
- Lakin, K. M., “Thin Film Resonators and Filters”, IEEE Untrasonics Symposium, Caesar's Tahoe, NV, (Oct. 1999),895-906.Applicant
- Lakin, K. M., et al., “Temperature Compensated Bulk Acoustic Thin Film Resonators”, IEEE Ultrasonics Symposium, San Juan, Puerto Rico, (Oct. 2000),855-858.Applicant
- Ohta, S. et al., “Temperature Characteristics of Solidly Mounted Piezoelectric Thin Film Resonators”, IEEE Ultrasonics Symposium, Honolulu, HI, (Oct. 2003),2011-2015.Applicant
- Bauer, L. O., et al., “Properties of Silicon Implanted with Boron Ions through Thermal Silicon Dioxide”, Solid State Electronics, vol. 16, No. 3, (Mar. 1973)289-300.Applicant
- Topich, J. A., et al., “Effects of Ion Implanted Flourine in Silicon Dioxide”, Nuclear Instr. And Methods, Cecon Rec, Cleveland, OH, (May 1978),70-73.Applicant
- Spangenberg, B. et al., “Dependence of the Layer Resistance of Boron Implantation in Silicon and the Annealing Conditions”, Comptus Rendus de I'Academic Bulgare des Sciences, vol. 33, No. 3, (1980), 325-327.Applicant
- Hara, K. “Surface Treatment of Quartz Oscillator Plate by Ion Implantation”, Oyo Buturi, vol. 47, No. 2, (Feb. 1978),145-146.Applicant
- Ng, J. et al., “The Diffusion Ion-Implanted Boron in Silicon Dioxide”, AIP Conf Proceedings, No. 122, (1984),20-33.Applicant
- Pang, W. et al., “High Q Single-Mode High-Tone Bulk Acoustic Resonator Integrated With Surface-Machined FBAR Filter”, Microwave Symposium Digest, IEEE MTT-S International, (2005),413-416.Applicant
- Al-Ahmad, M. et al., “Piezoelectric-Based Tunable Microstrip Shunt Resonator”, Proceedings of Asia-Pacific Microwave Conference 2006.Applicant
- Lakin, K.M. , “Thin Film BAW Filters for Wide Bandwidth and High Performance Applications”, IEEE Microwave Symposium Digest; vol. 2 Jun. 6-11, 2004 , 923-926.Applicant
- Lakin, et al., “Wide Bandwidth Thin Film BAW Filters”, 2004 IEEE Ultrasonics Symposium, vol. 1, Aug. 2004 , 407-410.Applicant
- Larson III, John D. et al., “Measurement of Effective Kt2,Q,Rp,Rs vs. Temperature for Mo/AIN FBAR Resonators”, IEEE Ultrasonics Symposium 2002 , 939-943.Applicant