US 6,864,500 B2Grant

Programmable conductor memory cell structure

Issue Date:2005-03-08

•37 Claims

•8 Drawing Sheets

Abstract

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depends, in part, on the availability of metal ions. It is important that the metal ions come only from the solid solution of the memory cell body. If additional metal ions are supplied from other sources, such as the sidewall edge at the anode interface, the amount of metal ions may not be directly related to the strength of the electric field, and the programming will not respond consistently from cell to cell. The embodiments described herein provide new and novel structures that block interface diffusion paths for metal ions, leaving diffusion from the bulk glass electrolyte as the only supply of metal ions for conductive pathway formation.

Metadata

Assignee

Micron Technology, Inc.

Inventor

Terry L. Gilton

Application Information

Application Number:US 10/121,790

Filing Date:2002-04-10

Priority Date:2002-04-10

Art Unit:2815

Patent Drawings (8 sheets)

Description

Field of the Invention

[00002] This invention relates generally to memory devices for integrated circuits and more particularly to an anode contact for a programmable conductor random access memory (PCRAM) cell.

Background of the Invention

[00003] The digital memory chip most commonly used in computers and computer system components is the dynamic random access memory (DRAM), wherein voltage stored in capacitors represents digital bits of information. Electric power must be supplied to the capacitors to maintain the information because, without frequent refresh cycles, the stored charge dissipates, and the information is lost. Memories that require constant power are known as volatile memories.

[00004] Non-volatile memories do not need frequent refresh cycles to preserve their stored information, so they consume less power than volatile memories. The information stays in the memory even when the power is turned off. There are many applications where non-volatile memories are preferred or required, such as in lap-top and palm-top computers, cell phones or control systems of automobiles. Non-volatile memories include magnetic random access memories (MRAMs), erasable programmable read only memories (EPROMs) and variations thereof.

[00005] Another type of non-volatile memory is the programmable conductor or programmable metallization memory cell, which is described by Kozicki et al. in (U.S. Pat. No. 5,761,115; No. 5,914,893; and No. 6,084,796) and is incorporated by reference herein. The programmable conductor cell of Kozicki et al. (also referred to by Kozicki et al. as a “metal dendrite memory”) comprises a glass ion conductor, such as a chalcogenide-metal ion glass, and a plurality of electrodes disposed at the surface of the fast ion conductor and spaced a distance apart from one another. The glass/ion element shall be referred to herein as a “glass electrolyte” or, more generally, “cell body.” When a voltage is applied across the anode and cathode, a non-volatile conductive pathway (considered a sidewall “dendrite” by Kozicki et al.) grows from the cathode through or along the cell body towards the anode. The growth of the dendrite depends upon applied voltage and time; the higher the voltage, the faster the growth rate; the longer the time, the longer the dendrite. The dendrite can retract, re-dissolving the metal ions into the cell body, by reversing the polarity of the voltage at the electrodes.

[00006] In the case of a dielectric material, programmable capacitance between electrodes are programmed by the extent of dendrite growth. In the case of resistive material, programmable resistances are also programmed in accordance with the extent of dendrite growth. The resistance or capacitance of the cell thus changes with changing dendrite length. By completely shorting the glass electrolyte, the metal dendrite can cause a radical change in current flow through the cell, defining a different memory state.

[00007] For the proper functioning of a memory device incorporating such a chalcogenide-metal ion glass element, it is important that growth of the conductive pathway have a reproducible relationship to applied voltage. For device operation, multiple cells across an array should ideally have a consistent response to the signals they receive.

[00008] The current invention addresses the issue of consistent memory cell response by ensuring a uniform supply of metal ions for formation of a conductive pathway under applied voltage.

Summary of the Invention

[00009] A programmable conductor memory cell for an integrated circuit is disclosed. In accordance with one aspect of the invention, the memory cell includes a memory cell body, formed from a glass electrolyte element having metal ions disposed therein, which fills a cell body via in a first insulating layer. A cathode is in contact with the cell body at the bottom of the cell body via. The second insulating layer, which overlies the first insulating layer and the cell body, has an anode via therein that is positioned concentrically over the memory cell body. The anode via is filled with anode material so that the anode contacts only a central portion of the anode surface of the memory cell body, which central portion is spaced inwardly from the sidewall of the memory cell body.

[00010] In a preferred embodiment, the anode via is lined with a spacer, preferably of insulating material, to ensure coverage of the sidewall edge of the memory cell body. In another embodiment, the anode via is formed using a mask with an opening smaller in width than the memory cell body and having the opening arranged concentrically over the memory cell body. In this way the sidewall edge of the memory cell body is covered by the second insulating layer.

[00011] The memory cell body can comprise a chalcogenide glass electrolyte material, preferably germanium-selenium, containing metal ions such as silver.

Brief Description of the Drawings

[00012] These and other aspects of the invention will be better understood from the description below and the appended drawings, which are meant to illustrate and not to limit the invention, and in which:

[00013] FIG. 1A is a cross section of a partially fabricated programmable conductor memory cell in an integrated circuit, constructed in accordance with a preferred embodiment of the present invention.

[00014] FIG. 1B is a perspective view of the partially fabricated programmable conductor memory cell of FIG. 1A.

[00015] FIG. 1C is a cross section of a partially fabricated memory cell for an integrated circuit, constructed in accordance with another embodiment of the present invention.

[00016] FIG. 2 is a cross section showing an embodiment of the current invention wherein an anode via has a smaller diameter than the memory cell body and is formed concentrically thereover.

[00017] FIG. 3 is a cross section showing the programmable conductor memory cell of FIG. 1A after deposition of an insulating layer, formation of an anode via therein and deposition of conformal layer of silicon nitride, according to another embodiment of the current invention.

[00018] FIG. 4 is a cross section showing the programmable conductor memory cell of FIG. 3 after a spacer etch has been performed.

[00019] FIG. 5 is a cross section showing the structure of FIG. 3, after a metal layer has been deposited into the spacer-lined anode via.

Detailed Description of the Preferred Embodiment

[00020] For proper functioning of a “programmable conductor” memory cell device, incorporating a glass electrolyte element with an adjustable conductivity, it is important that the conductive pathway growth in response to a particular applied voltage occurs reproducibly and consistently across an array. Low voltages cause slow growth, whereas higher voltages result in faster growth of the conductive path. The amount of growth in a given switching time depends, in part, on the availability of metal ions. Therefore, it is important that the cations come from a controlled source, such as from the solid solution of the cell body or glass electrolyte, which supplies an amount of cations proportional to the concentration therein and to the electric field. If additional cations are supplied from other, less reliable sources, the amount of cations may not be directly and reproducibly related to the strength of the electric field or switching time.

[00021] For example, the interface between the cell body sidewall and the surrounding insulating layer can provide a diffusion path for metal atoms and ions. When a metal anode layer (e.g., silver) is in contact with the edge (shown in FIG. 1B as 115) of the cell body sidewall, i.e., where the sidewall makes contact with the anode surface, there is additional diffusion of metal cations along the sidewall, through the interface, to the growing conductive pathway. If the anode via is designed to have the same width as the cell body via, even slight variations in mask registration can result in large differences in the contact area between the anode and the edge of the cell body sidewall, regardless of conventional mechanisms to minimize the effect of mask misalignment. These differences in contact area lead to differences in the metal supply through the cell body/insulator interface to the growing conductive pathway. Thus, the extent of the conductive pathway formation would depend nor just on applied voltage and/or switching time, but also on the amount of meal leakage along the sidewall. Accordingly, the preferred embodiments provide means for avoiding differential contact area between the anode and the edge of the glass electrolyte element.

[00022] A preferred embodiment of the current invention can be described beginning with reference to FIG. 1A, wherein the first components of a simplified programmable conductor memory cell for an integrated circuit are shown. A cathode layer 101, which is connected to the negative pole of a power supply, is shown. Preferably, the cathode layer 101 comprises tungsten (W). An insulating layer 103, preferably silicon nitride (Si₃N₄) is deposited over the cathode layer 101. In other arrangements, it will be understood that the thick planarized insulating layer 103 can comprise a form of silicon oxide, such as TEOS or BPSG, although it is preferred to define the sidewall with a material that prevents the diffusion of metal between devices. The thickness of the insulating layer 103 is preferably between about 10 nm and 200 nm, more preferably between about 25 nm and 100 nm and most preferably about 50 nm. A cell body via 105 is etched through the insulating layer 103, opening a window to the cathode layer 101, using standard patterning and etching techniques. The width of the cell body via 105 is preferably between about 100 nm and 500 nm, more preferably between about 200 nm and 300 nm, and most preferably about 250 nm. The cell body via 105 is filled with a glass electrolyte 107 (sometimes referred to in the literature as a Glass Fast Ion Diffusion or GFID element). The illustrated cell body preferably includes a chalcogenide glass, more preferably a glass comprising germanium and selenium (Ge—Se) and most preferably, Ge₄Se₆, Ge₃Se, or Ge₂Se₈, and additionally includes metal ions. The actual ratios of elements in the cell body 107 can vary and more complicated structures for the cell body 107 and are also contemplated, one of which is illustrated in FIG. 1C and discussed below. Once the cell body via 105 is filled, the top surface 109 of the Ge—Se 107 is made level with the top surface 111 of the insulating layer 103, preferably by chemical mechanical planarization. Preferably the height of the programmable conductor memory cell body between the cathode surface and the anode surface is in the range of about 25 nm to 100 nm.

[00023] Some aspects of the glass electrolyte element that are helpful for understanding the embodiments of the current invention are shown in FIG. 1B, a perspective view of the first components of the programmable conductor memory cell already seen in cross section in FIG. 1A. The glass electrolyte element 107 is shown embedded in the insulating layer 103 and making contact with an underlying cathode layer 101. The sidewall 113 of the glass electrolyte element is defined as the outer, cylindrical (in the illustrated embodiment) surface of the element, which is defined by the surrounding via wall 105. The edge 115 of the sidewall 113 is the intersection of the glass electrolyte element sidewall 113 and the top surface 109. In the illustrated embodiment, the edge 115 of the sidewall 113 has the form of a circle.

[00024] In the illustrated embodiment, in order to supply metal ions to the Ge—Se glass, a thin layer (not shown) of metal or a combination of metals, including metal(s) from Group IB or Group IIB, more preferably, silver, copper or zinc, is preferably deposited over a recessed top surface 109 of the fast ion conducting element and metal ions are driven into the glass. The thickness of the metal layer is between about 2 nm and 10 nm, more preferably between about 3 nm and 8 nm and most preferably about 5 nm. For example, silver (Ag) ions can be driven into the Ge—Se material by exposing an overlying Ag layer to ultraviolet radiation with a wavelength less than 50 nm or through plasma treatment. Preferably, there is enough silver available in the layer to form a ternary compound, silver germanium selenide, which is a stable amorphous material. Silver constitutes preferably between about 20% and 50%, more preferably between about 25% and 35% and most preferably about 30% (atomic percent) of the compound. The ternary compound is a glass electrolyte material. The amount of silver formed over the glass is preferably selected to be completely consumed by the photodissolution process. After formation of the glass electrolyte material, the top surface 111 can be planarized again to remove any remaining metal.

[00025] In other arrangements, metal for the programmable conductor memory is supplied by other means. For example, a layer containing a mixture of tungsten-silver of about 50%—50% by weight can be co-sputtered onto the glass electrolyte as a source of silver ions. In still other arrangements, the metal and glass material can be co-sputtered or deposited from a source that contains all species, so no metal deposition and drive-in steps are needed.

[00026] FIG. 1C illustrates another arrangement of the cell body 107, wherein like reference numerals are employed to refer to like parts among the different embodiments. In this arrangement, the cell body 107 includes three layers, comprising a first Ge—Se layer 107a (e.g., Ge₄Se₆). The skilled element artisan will appreciate that the embodiments discussed below are equally applicable to forming electrodes over the cell body 107 of FIG. 1A, FIG. 1B or of any of a variety of other programmable conductor arrangements. In the illustrated embodiment of FIG. 1C the intermediate layer 107b provides metal to the cell body 107 for formation of conductive pathways under the influence of applied electrical fields. The structure can be formed by blanket deposition and etch or by first forming and then filling a via. In either case, the sidewall of the insulator surrounding the cell body is referred to as a “via” herein.

[00027] Regardless of how formed, the cell body or glass electrolyte element 107, including metal ions diffused therein, serves as the memory cell body.

[00028] With reference to FIG. 2, a second insulating layer 121, preferably silicon nitride, is deposited over the first insulating layer 103. The thickness of the second insulating layer 121 is preferably between about 50 nm and 200 nm, more preferably between about 80 nm and 150 nm and most preferably about 100 nm. An anode via 123 is etched through the Si₃N₄directly over the cell body via, exposing the glass electrolyte element 107.

[00029] In some arrangements, metal deposition and drive-in steps can be performed after etching the anode via instead of before deposition of the second insulating layer 121 as described above.

[00030] In the embodiment of FIG. 2, the width of the anode via 123 in insulating layer 121 is smaller than the width of the cell body 107 in insulating layer 103, preferably by between about 10 nm and 100 nm and more preferably by between about 10 nm and 60 nm. The anode via 123 is positioned over the cell body 107 roughly concentrically, that is, so that the sidewall of anode via 123 is spaced from the sidewall of cell body 107 all the way around, and only a central portion of the cell body 107 is exposed.

[00031] Referring now to FIG. 3, the anode via 123 and the cell body via 105 have about the same size and are aligned directly over one another, in accordance with another embodiment of the invention. Methods known in the art can be used to avoid mask misalignment problems. Additionally, a thin blanket layer 125 of spacer material, preferably an insulating material and most preferably Si₃N₄, is deposited conformally over the insulating layer 121 and the anode via 123. The skilled artisan will appreciate, in view of the disclosure herein, that the spacer material need not be the same as the surrounding insulating layer, although it is preferably a barrier to metal diffusion, particularly to diffusion of the fast diffusing element incorporated into the cell body 107 and anode to be formed. The thickness of the spacer layer 125 is preferably between about 5 nm and 50 nm and more preferably between about 5 nm and 30 nm.

[00032] Referring to FIG. 4, a spacer etch is performed, preferably by reactive ion etching (RIE), wherein horizontal portions 127 (FIG. 3) of the spacer layer 125 are removed preferentially, leaving vertical portions of the spacer layer 125 relatively unaffected. FIG. 4 shows the vertical portions of the spacer layer 125 that remain after RIE, leaving a the spacer 131 lining vertical surfaces of the anode via 123. It will be understood that the spacer 131 forms a continuous lining around the sidewall of the anode via 123. In the illustrated embodiment, the spacer 131 is a cylindrical annulus with a rounded top edge, whose outer side surface is in contact with the sidewall of the anode via 123.

[00033] Next, as shown in FIG. 5, a metal anode layer 133, preferably including a metal or combination of metals from Group IB or Group IIB, more preferably copper or zinc and most preferably silver, is deposited. Preferably, the metal anode layer 133 is deposited so that it fills the anode via 123 and forms a portion 135 overlying the second insulating layer 121 all as one contiguous body of material. The overlying portion 135 is subsequently patterned and etched as desired, depending upon the circuit design of the memory array.

[00034] In FIG. 5, the metal deposition is shown for an anode via 123 with a spacer 131. The anode via filling and overlying anode layer can be deposited in this same manner for the embodiment described with respect to FIG. 2, having an anode via 123 that is narrow (compared to the cell body 107) without a spacer. In both the embodiment of FIG. 2 and the embodiment of FIG. 4, the anode makes contact with only a central portion of the memory cell body and not with the sidewall edges.

[00035] When a voltage is applied across the lower electrode 101 and upper electrode 133, a conductive path forms between the cathode 101 (i.e., the electrode connected to the negative pole of the power supply) and the anode 133 (i.e., the electrode connected to the positive pole of the power supply). Without being limited by theory, it is believed that the conductive path grows by precipitation of cations (e.g., silver cations) from the memory cell body 107. Changes in the extent of the conductive path affect the overall resistance of the device. The conductive path tends to remain intact when the voltage is removed.

[00036] For a binary programmable conductor memory device, the memory has two basic states: 0 and 1. When there is no conductive path, the memory cell has high electrical resistance and reads as 0. When the conductive path shorts the memory cell body 107, from the cathode 101 to the anode 133, the resistance is low and the memory cell reads as 1. The change in resistance of the memory cell with and without a conductive path can be as much as two orders of magnitude, e.g., a change from Megaohms to milliohms. Reversing the polarity of the voltage reverses the formation of the conductive path, redissolving metal cations into the glass.

[00037] Alternatively, the memory cell can be programmed into as many as 3 or 4 states by setting the extent of the conductive path growth. These changes can be detected easily by the bit lines and word lines in a memory array, such that changing the extent of the conductive path can serve to change the state of the memory bit.

[00038] Thus, in one embodiment of the current invention, an anode via is made smaller than the cell body via so that the overlying insulator layer covers the cell body/insulator interface. The smaller anode vias are positioned so that their bottoms make contact only with the cell body and do not extend to the cell body/insulator interface. In another embodiment, a spacer prevents contact between the anode material and the cell body/insulator interface by covering the interface with spacer material near the outer edge of the anode via bottom. The preferred embodiments thus give reliable control to the spacing between the edge of the anode and the edge of the memory cell body or GFID material. These structures ensure that the anode cations that precipitate out to form the conductive path are those that were intentionally and controllably provide provided to the glass electrolyte material, whether by photodissolution, separate metal-containing layer (see FIG. 1C), co-deposition or any other manner of metal doping. Silver content dissolved within a GeSe glass, for example, is self limiting at about 30 atm %, thus providing a reliably consistent source of diffusion ions for selectively forming the conductive path. For a given cation (e.g., Ag) concentration in solution, this provides conductive pathway formation reproducibly dependent upon voltage applied across the electrodes and/or switching time.

[00039] Although the embodiments of the invention have been described in the context of a vertically built device, one of skill in the art will recognize that this is not the only possible configuration or method for constructing a programmable conductor memory cell.

Claims

Certificate of Correction present

The claims shown below may not include correction changes. Use the corrected PDF for authoritative text.

1. A programmable conductor memory cell for an integrated circuit, comprising:

a first insulating layer having a top surface and a cell body via;

a memory cell body comprising a glass electrolyte with metal ions disposed therein, the memory cell body being contained within the cell body via and defining a sidewall where the memory cell body and the first insulating layer make contact;

a cathode in contact with the memory cell body;

a second insulating layer over the first insulating layer and defining an anode via to said the memory cell body;

an anode in contact with a top surface of the memory cell body and formed in the anode via;

wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, the anode via has a width about the same as a width of the memory cell body, and the anode via is lined with a spacer that covers an edge of the sidewall of the memory cell body.

2. The programmable conductor memory cell of claim 1 wherein the spacer comprises an insulating material.

3. The programmable conductor memory cell of claim 1 wherein the spacer has a thickness extending into the anode via between about 5 nm and 30 nm.

4. The programmable conductor memory cell of claim 1 wherein the spacer comprises silicon nitride.

5. The programmable conductor memory cell of claim 1 wherein the anode via is filled with metal.

6. The programmable conductor memory cell of claim 5 wherein the metal is contiguous with a metal layer over the second insulating layer.

7. The programmable conductor memory cell of claim 1 wherein the cathode comprises tungsten.

8. The programmable conductor memory cell of claim 1 wherein the memory cell body comprises a chalcogenide-metal ion glass electrolyte material.

9. The programmable conductor memory cell of claim 8 wherein the metal ions are chosen from the group consisting of silver, copper, zinc and combinations thereof.

10. The programmable conductor memory cell of claim 8 wherein the anode comprises silver.

11. The programmable conductor memory cell of claim 10 wherein the glass electrolyte material comprises silver-germanium-selenium.

12. The programmable conductor memory cell of claim 1 wherein a distance between a bottom surface and the top surface of the memory cell body is about 25 nm to 100 nm.

13. The programmable conductor memory cell of claim 1 wherein a width of the cell body via is between about 100 nm and 500 nm.

14. The programmable conductor memory cell of claim 1 wherein a width of the cell body via is between about 200 nm and 300 nm.

15. The programmable conductor memory cell of claim 1 wherein the first insulating layer comprises silicon nitride.

16. The programmable conductor memory cell of claim 15 wherein the first insulating layer has a thickness between about 10 nm and 200 nm.

17. The programmable conductor memory cell of claim 15 wherein the first insulating layer has a thickness between about 25 nm and 150 nm.

18. The programmable conductor memory cell of claim 1 wherein the second insulating layer comprises silicon nitride.

19. The programmable conductor memory cell of claim 18 wherein the second insulating layer has a thickness between about 50 nm and 200 nm.

20. The programmable conductor memory cell of claim 18 wherein the second insulating layer has a thickness between about 80 nm and 150 nm.

21. The programmable conductor memory cell of claim 1 wherein the anode via has a width no greater than a width of the cell body via.

22. The programmable conductor memory cell of claim 1, wherein the memory cell body fills the cell body via.

23. The programmable conductor memory cell of claim 1, wherein the top surface of the memory cell body is coplanar with the top surface of the first insulating layer.

24. The programmable conductor memory cell of claim 1, wherein the cathode extends outside the sidewall of the memory cell body.

25. A programmable conductor random access memory cell, comprising:

a cathode;

a first insulating layer over the cathode and defining a via to the cathode;

a silver-germanium-selenium glass electrolyte memory cell body in the via and over the cathode, the cathode extending beyond a sidewall of the memory cell body;

a second insulating layer over the first insulating layer, having an anode via to the memory cell body;

a spacer lining the anode via; and

an anode within said the spacer lining the anode via in contact with the memory cell body.

26. The programmable conductor memory cell of claim 25 wherein the spacer comprises an insulating material.

27. The programmable conductor memory cell of claim 26 wherein the spacer comprises silicon nitride.

28. The programmable conductor memory cell of claim 27 wherein a thickness of the spacer is between about 5 nm and 30 nm.

29. The programmable conductor memory cell of claim 25, wherein the anode is silver.

30. The programmable conductor memory cell of claim 25, wherein the memory cell body comprises a layer of Ge_xSe_10-x, x being about 4, and a layer of silver selenide.

31. A programmable conductor random access memory cell comprising:

an upper insulating layer having an anode via, the anode via having a sidewall;

insulating material along the sidewall and narrowing the anode via;

an anode contained by the narrowed anode via and overlying the upper insulating layer;

a lower insulating layer having a cell body via; and

a memory cell body within the cell body via and having a sidewall edge, the anode contacting the memory cell body without contacting the sidewall edge, the memory cell body comprising a germanium selenide layer and a silver selenide layer.

32. A programmable conductor random access memory cell comprising:

an insulating layer;

an anode in an anode via through the insulating layer, the anode filling the anode via; and

a glass electrolyte element, the anode making contact with only a central portion of an upper surface of the glass electrolyte element, the glass electrolyte element including a layer of Ge_xSe_10-x, x being about 4, and a layer of silver selenide.

33. The programmable conductor memory cell of claim 32 wherein the anode comprises silver.

34. The programmable conductor memory cell of claim 32, wherein the anode is a metal.

35. A The programmable conductor memory cell for an integrated circuit, comprising:

a first insulating layer having a top surface and a cell body via;

a cathode in contact with the memory cell body;

a second insulating layer over the first insulating layer and defining an anode via to the memory cell body;

an anode in contact with a top surface of the memory cell body and formed in the anode via;

wherein the anode contacts the top surface of the memory cell body without contacting the sidewall of the memory cell body, and the memory cell body comprises a layer of Ge_xSe_10-x, x being about 4, and a layer of silver selenide.

36. The programmable conductor memory cell of claim 35 wherein the anode via is smaller in width than the memory cell body, and a sidewall edge of the memory cell body is covered by the second insulating layer.

37. The programmable conductor memory cell of claim 35 wherein the second insulating layer comprises silicon nitride.

Patent Citations (202)

Patent	Date	Inventor	Cited By
US3271591(A)	1966-09-01	Ovshinsky	Applicant
US3622319(A)	1971-11-01	Sharp	Applicant
US3743847(A)	1973-07-01	Boland	Applicant
US3961314(A)	1976-06-01	Klose et al.	Applicant
US3966317(A)	1976-06-01	Wacks et al.	Applicant
US3988720(A)	1976-10-01	Ovshinsky	Applicant
US3983542(A)	1976-11-01	Ovshinsky	Applicant
US4177474(A)	1979-12-01	Ovshinsky	Applicant
US4267261(A)	1981-05-01	Hallman et al.	Applicant
US4269935(A)	1981-05-01	Masters et al.	Applicant
US4312938(A)	1982-01-01	Drexler et al.	Applicant
US4316946(A)	1982-02-01	Masters et al.	Applicant
US4320191(A)	1982-03-01	Yoshikawa et al.	Applicant
US4405710(A)	1983-09-01	Balasubramanyam et al.	Applicant
US4419421(A)	1983-12-01	Wichelhaus et al.	Applicant
US4499557(A)	1985-02-01	Holmberg et al.	Applicant
US4597162(A)	1986-07-01	Johnson et al.	Applicant
US4608296(A)	1986-08-01	Keem et al.	Applicant
US4637895(A)	1987-01-01	Ovshinsky et al.	Applicant
US4646266(A)	1987-02-01	Ovshinsky et al.	Applicant
US4664939(A)	1987-05-01	Ovshinsky	Applicant
US4668968(A)	1987-05-01	Ovshinsky et al.	Applicant
US4670763(A)	1987-06-01	Ovshinsky et al.	Applicant
US4671618(A)	1987-06-01	Wu et al.	Applicant
US4673957(A)	1987-06-01	Ovshinsky et al.	Applicant
US4678679(A)	1987-07-01	Ovshinsky	Applicant
US4696758(A)	1987-09-01	Ovshinsky et al.	Applicant
US4698234(A)	1987-10-01	Ovshinsky et al.	Applicant
US4710899(A)	1987-12-01	Young et al.	Applicant
US4728406(A)	1988-03-01	Banerjee et al.	Applicant
US4737379(A)	1988-04-01	Hudgens et al.	Applicant
US4766471(A)	1988-08-01	Ovshinsky et al.	Applicant
US4769338(A)	1988-09-01	Ovshinsky et al.	Applicant
US4775425(A)	1988-10-01	Guha et al.	Applicant
US4788694(A)	1988-11-01	Ovshinsky et al.	Applicant
US4795657(A)	1989-01-01	Formigoni et al.	Applicant
US4800526(A)	1989-01-01	Lewis	Applicant
US4809044(A)	1989-02-01	Pryor et al.	Applicant
US4818717(A)	1989-04-01	Johnson et al.	Applicant
US4843443(A)	1989-06-01	Ovshinsky et al.	Applicant
US4845533(A)	1989-07-01	Pryor et al.	Applicant
US4847674(A)	1989-07-01	Sliwa et al.	Applicant
US4853785(A)	1989-08-01	Ovshinsky et al.	Applicant
US4891330(A)	1990-01-01	Guha et al.	Applicant
US5128099(A)	1992-07-01	Strand et al.	Applicant
US5159661(A)	1992-10-01	Ovshinsky et al.	Applicant
US5166758(A)	1992-11-01	Ovshinsky et al.	Applicant
US5177567(A)	1993-01-01	Klersy et al.	Examiner
US5219788(A)	1993-06-01	Abernathey et al.	Applicant
US5238862(A)	1993-08-01	Blalock et al.	Applicant
US5272359(A)	1993-12-01	Nagasubramanian et al.	Applicant
US5296716(A)	1994-03-01	Ovshinsky et al.	Applicant
US5314772(A)	1994-05-01	Kozicki	Applicant
US5315131(A)	1994-05-01	Kishimoto et al.	Applicant
US5335219(A)	1994-08-01	Ovshinsky et al.	Applicant
US5341328(A)	1994-08-01	Ovshinsky et al.	Applicant
US5350484(A)	1994-09-01	Gardner et al.	Applicant
US5359205(A)	1994-10-01	Ovshinsky	Applicant
US5360981(A)	1994-11-01	Owen et al.	Applicant
US5406509(A)	1995-04-01	Ovshinsky et al.	Applicant
US5414271(A)	1995-05-01	Ovshinsky et al.	Applicant
US5500532(A)	1996-03-01	Kozicki et al.	Applicant
US5512328(A)	1996-04-01	Yoshimura et al.	Applicant
US5512773(A)	1996-04-01	Wolf et al.	Applicant
US5534711(A)	1996-07-01	Ovshinsky et al.	Applicant
US5534712(A)	1996-07-01	Ovshinsky et al.	Applicant
US5536947(A)	1996-07-01	Klersy et al.	Applicant
US5543737(A)	1996-08-01	Ovshinsky	Applicant
US5591501(A)	1997-01-01	Ovshinsky et al.	Applicant
US5596522(A)	1997-01-01	Ovshinsky et al.	Applicant
US5687112(A)	1997-11-01	Ovshinsky	Applicant
US5694054(A)	1997-12-01	Ovshinsky et al.	Applicant
US5714768(A)	1998-02-01	Ovshinsky et al.	Applicant
US5726083(A)	1998-03-01	Takaishi	Applicant
US5751012(A)	1998-05-01	Wolstenholme et al.	Applicant
US5789277(A)	1998-08-01	Zahorik et al.	Applicant
US5814527(A)	1998-09-01	Wolstenholme et al.	Applicant
US5818749(A)	1998-10-01	Harshfield	Applicant
US5825046(A)	1998-10-01	Czubatyj et al.	Applicant
US5841150(A)	1998-11-01	Gonzalez et al.	Applicant
US5846889(A)	1998-12-01	Harbison et al.	Applicant
US5851882(A)	1998-12-01	Harshfield	Applicant
US5869843(A)	1999-02-01	Harshfield	Applicant
US5912839(A)	1999-06-01	Ovshinsky et al.	Applicant
US5933365(A)	1999-08-01	Klersy et al.	Applicant
US5998066(A)	1999-12-01	Block et al.	Applicant
US6011757(A)	2000-01-01	Ovshinsky	Applicant
US6031287(A)	2000-02-01	Harshfield	Applicant
US6072716(A)	2000-06-01	Jacobson et al.	Applicant
US6077729(A)	2000-06-01	Harshfield	Applicant
US6087674(A)	2000-07-01	Ovshinsky et al.	Applicant
US6141241(A)	2000-10-01	Ovshinsky et al.	Applicant
US6143604(A)	2000-11-01	Chiang et al.	Applicant
US6177338(B1)	2001-01-01	Liaw et al.	Applicant
US6236059(B1)	2001-05-01	Wolstenholme et al.	Applicant
USRE37259(E)	2001-07-01	Ovshinsky	Applicant
US6297170(B1)	2001-10-01	Gabriel et al.	Applicant
US6300684(B1)	2001-10-01	Gonzalez et al.	Applicant
US6316784(B1)	2001-11-01	Zahorik et al.	Applicant
US6329606(B1)	2001-12-01	Freyman et al.	Applicant
US6337266(B1)	2002-01-01	Zahorik	Examiner
US6339544(B1)	2002-01-01	Chiang et al.	Applicant
US6350679(B1)	2002-02-01	McDaniel et al.	Applicant
US6376284(B1)	2002-04-01	Gonzalez et al.	Applicant
US6388324(B2)	2002-05-01	Kozicki et al.	Applicant
US6391688(B1)	2002-05-01	Gonzalez et al.	Applicant
US6404665(B1)	2002-06-01	Lowery et al.	Applicant
US6414376(B1)	2002-07-01	Thakur et al.	Applicant
US6420725(B1)	2002-07-01	Harshfield	Applicant
US6423628(B1)	2002-07-01	Li et al.	Applicant
US6429064(B1)	2002-08-01	Wicker	Applicant
US6437383(B1)	2002-08-01	Xu	Applicant
US6440837(B1)	2002-08-01	Harshfield	Applicant
US6462984(B1)	2002-10-01	Xu et al.	Applicant
US6469364(B1)	2002-10-01	Kozicki	Applicant
US6480438(B1)	2002-11-01	Park	Applicant
US6487113(B1)	2002-11-01	Park et al.	Applicant
US6601111(B1)	2002-12-01	Lowery	Applicant
US6507061(B1)	2003-01-01	Hudgens et al.	Applicant
US6511862(B2)	2003-01-01	Hudgens et al.	Applicant
US6512241(B1)	2003-01-01	Lai	Applicant
US6611867(B1)	2003-01-01	Lowery et al.	Applicant
US6514805(B2)	2003-02-01	Xu et al.	Applicant
US6531373(B2)	2003-03-01	Gill et al.	Applicant
US6534781(B2)	2003-03-01	Dennison	Applicant
US6545287(B2)	2003-04-01	Chiang	Applicant
US6545907(B1)	2003-04-01	Lowery et al.	Applicant
US6555860(B2)	2003-04-01	Lowery et al.	Applicant
US6563164(B2)	2003-05-01	Lowery et al.	Applicant
US6566700(B2)	2003-05-01	Xu	Applicant
US6567293(B1)	2003-05-01	Lowery et al.	Applicant
US6569705(B2)	2003-05-01	Chiang et al.	Applicant
US6570784(B2)	2003-05-01	Lowery	Applicant
US6576921(B2)	2003-06-01	Lowery	Applicant
US6586761(B2)	2003-07-01	Lowery	Applicant
US6590807(B2)	2003-07-01	Lowery	Applicant
US6593176(B2)	2003-07-01	Dennison	Applicant
US6597009(B2)	2003-07-01	Wicker	Applicant
US6689714(B2)	2003-07-01	Malmon et al.	Applicant
US6605527(B2)	2003-08-01	Dennison et al.	Applicant
US6613604(B2)	2003-09-01	Maimon et al.	Applicant
US6621095(B2)	2003-09-01	Chiang et al.	Applicant
US6625054(B2)	2003-09-01	Lowery et al.	Applicant
US6642102(B2)	2003-11-01	Xu	Applicant
US6646297(B2)	2003-11-01	Dennison	Applicant
US6649926(B2)	2003-11-01	Dennison	Applicant
US6667900(B2)	2003-12-01	Lowery et al.	Applicant
US6671710(B2)	2003-12-01	Ovshinsky et al.	Applicant
US6673700(B2)	2004-01-01	Dennison et al.	Applicant
US6674115(B2)	2004-01-01	Hudgens et al.	Applicant
US6687153(B2)	2004-02-01	Lowery	Applicant
US6687427(B2)	2004-02-01	Ramalingam et al.	Applicant
US6690026(B2)	2004-02-01	Peterson	Applicant
US6696355(B2)	2004-02-01	Dennison	Applicant
US6707712(B2)	2004-03-01	Lowery	Applicant
US6714954(B2)	2004-03-01	Ovshinsky et al.	Applicant
US20020000886(A1)	2002-01-01	Kozicki et al.	Applicant
US20020072188(A1)	2002-06-01	Gilton	Applicant
US20020106849(A1)	2002-08-01	Moore	Applicant
US20020123169(A1)	2002-09-01	Moore et al.	Applicant
US20020123170(A1)	2002-09-01	Moore et al.	Applicant
US20020123248(A1)	2002-09-01	Moore et al.	Applicant
US20020127886(A1)	2002-09-01	Moore et al.	Applicant
US20020132417(A1)	2002-09-01	Li	Applicant
US20020180551(A1)	2002-10-01	Harshfield	Applicant
US20020163828(A1)	2002-11-01	Krieger et al.	Applicant
US20020168852(A1)	2002-11-01	Harshfield et al.	Applicant
US20020190289(A1)	2002-12-01	Harshfield et al.	Applicant
US20030001229(A1)	2003-01-01	Moore et al.	Applicant
US20030027416(A1)	2003-02-01	Moore	Applicant
US20030032254(A1)	2003-02-01	Gilton	Applicant
US20030038301(A1)	2003-02-01	Moore	Applicant
US20030043631(A1)	2003-03-01	Gilton et al.	Applicant
US20030045049(A1)	2003-03-01	Campbell et al.	Applicant
US20030045054(A1)	2003-03-01	Campbell et al.	Applicant
US20030047765(A1)	2003-03-01	Campbell	Applicant
US20030047772(A1)	2003-03-01	Li	Applicant
US20030047773(A1)	2003-03-01	Li	Applicant
US20030048744(A1)	2003-03-01	Ovshinsky et al.	Applicant
US20030049912(A1)	2003-03-01	Campbell et al.	Applicant
US20030068861(A1)	2003-04-01	Li	Applicant
US20030068862(A1)	2003-04-01	Li	Applicant
US20030095426(A1)	2003-05-01	Hush et al.	Applicant
US20030098497(A1)	2003-05-01	Moore et al.	Applicant
US20030107105(A1)	2003-06-01	Kozicki	Applicant
US20030117831(A1)	2003-06-01	Hush	Applicant
US20030128612(A1)	2003-07-01	Moore et al.	Applicant
US20030137869(A1)	2003-07-01	Kozicki	Applicant
US20030143782(A1)	2003-07-01	Gilton et al.	Applicant
US20030155589(A1)	2003-08-01	Campbell et al.	Applicant
US20030155606(A1)	2003-08-01	Campbell et al.	Applicant
US20030156447(A1)	2003-08-01	Kozicki	Applicant
US20030156463(A1)	2003-08-01	Casper et al.	Applicant
US20030209728(A1)	2003-11-01	Kozicki et al.	Applicant
US20030209971(A1)	2003-11-01	Kozicki et al.	Applicant
US20030210564(A1)	2003-11-01	Kozicki et al.	Applicant
US20030212724(A1)	2003-11-01	Ovshinsky et al.	Applicant
US20030212725(A1)	2003-11-01	Ovshinsky et al.	Applicant
US20040035401(A1)	2004-02-01	Ramachandran et al.	Applicant
JP56126916	1981-10-01		Applicant
WO9748032	1997-12-01		Applicant
WO9928914	1999-06-01		Applicant

Non-Patent Literature (172)

Bondarev, V.N.; Pikhitsa, P.V., A dendrite model of current instability in RbAg415, Solid State Ionics 70/71 (1994) 72-76.Applicant
Boolchand, P., The Maximum in glass transition temperature (Tg) near ×=1/3 in GexSe1-× Glasses, Asian Journal of Physics (2000) 9, 709-72.Applicant
Boolchand, P.; Bresser, W.J.; Mobile silver ions and glass formation in solid electrolytes, Nature 410 (2001) 1070-1073.Applicant
Boolchand, P.; Georgiev, D.G.; Goodman, B., Discovery of the Intermediate Phase in Chalcogenide Glasses, J. Optoelectronics and Advanced Materials, 3 (2001), 703.Applicant
Boolchand, P.; Salvanathan, D.; Wang, Y.; Georgiev, D.G.; Bresser, W.J., Onset of rigidity in steps in chalcogenide glasses, Properties and Applications of Amorphous Materials, M.F. Thorpe and Tichy, L. (eds.) Kluwer Academic Publishers, the Netherlands, 2001, pp. 97-132.Applicant
Boolchand, P.; Enzweiter, R.N.; Tenhover, M., Structural ordering of evaporated amorphous chalcogenide alloy films: role of thermal annealing, Diffusion and Defect Data vol. 53-54 (1987) 415-420.Applicant
Boolchand, P.; Grothaus, J.; Bressar, W.J.; Suranyi, P., Structural origin of broken chemical order in a GeSe2 glass, Phys. Rev. B 25 (1982) 2975-2978.Applicant
Boolchand, P.; Grothaus, J.; Phillips, J.C., Broken chemical order and phase separation in GexSe1-× glasses, Solid state comm. 45 (1983) 183-185.Applicant
Boolchand, P., Bresser, W.J., Compositional trends in glass transition temperature (Tg), network connectivity and nanoscale chemical phase separation in chalcogenides, Dept. of ECECS, Univ. Cincinnati (Oct. 28, 1999) 45221-0030.Applicant
Boolchand, P.; Grothaus, J, Molecular Structure of Melt-Quenched GeSe2 and GeS2 glasses compared, Proc. Int. Conf. Phys. Semicond. (Eds. Chadl and Harrison) 17th (1985) 833-36.Applicant
Bresser, W.; Boolchand, P.; Suranyi, P., Rigidity percolation and molecular clustering in network glasses, Phys. Rev. Lett. 56 (1986) 2493-2496.Applicant
Bresser, W.J.; Boolchand, P.; Suranyi, P.; de Neufville, J.P, Intrinsically broken chalcogen chemical order in stoichiometric glasses, Journal de Physique 42 (1981) C4-193-C4-196.Applicant
Bresser, W.J.: Boolchand, P.; Suranyi, P.; Hernandez, J.G., Molecular phase separation and cluster size in GeSe2 glass, Hyperfine Interactions 27 (1986) 389-392.Applicant
Cahen, D.; Gilet, J.-M; Schmitz, C.; Chernyak, L.; Gartsman, K.; Jakubowicz, A, Room-Temperature, electric field induced creation of stable devices in CulnSe2 Crystals, Science 258 (1992) 271-274.Applicant
Chatterjee, R.; Asokan, S.; Titus, S.S.K., Current-controlled negative-resistance behavior and memory switching in bulk As-Te-Se glasses, J. Phys. D: Appl. Phys. 27 (1994) 2624-2627.Applicant
Chen, C.H.; Tai, K.L. , Whisker growth induced by Ag photodoping in glassy GexSe1-×films, Appl. Phys. Lett. 37 (1980) 1075-1077.Applicant
Chen, G.; Cheng, J., Role of nitrogen in the crystallization of silicon nitride-doped chalcogenide glasses, J. Am. Ceram. Soc. 82 (1999) 2934-2936.Applicant
Chen, G.; Cheng, J.; Chen, W., Effect of Si3N4 on chemical durability of chalcogenide glass, J. Non-Cryst. Solids 220 (1997) 249-253.Applicant
Cohen, M.H.; Neale, R.G.; Paskin, A., A model for an amorphous semiconductor memory device, J. Non-Cryst, Solids 8-10 (1972) 885-891.Applicant
Croitoru, N.; Lazarescu, M.; Popescu, C.; Telnic, M.; and Vescan, L., Ohmic and non-ohmic conduction in some amorphous semiconductors, J. Non-Cryst. Solids 8-10 (1972) 781-786.Applicant
Dalven, R.; Gill, R., Electrical properties of beta-Ag2Te and beta-Ag2Se from 4.2 to 300K, J. Appl. Phys. 38 (1967) 753-756.Applicant
Davis, E.A., Semiconductors without form, Search 1 (1970) 152-155.Applicant
Deamalay, G.; Stoneham, A.M.; Morgan, D.V., Electrical phenomena in amorphous oxide films, R p. Prog. Phys. 33 (1970) 1129-1191.Applicant
Dejus, R.J.; Susman, S.; Volin, K.J.; Montague, D.G.; Price, D.L., Structure of Vitreous Ag-Ge-Se, J. N n-Cryst. Solids 143 (1992) 162-180.Applicant
den Boer, W., Threshold switching in hydrogenated amorphous silicon, Appl. Phys. Lett. 40 (1982) 812-813.Applicant
Drusedau, T.P.; Panckow, A.N.; Klabunde, F., The hydrogenated amorphous silicon/nanodisperse metal (SIMAL) system-Films of unique electronic properties, J. Non-Cryst. Solids 198-200 (1996) 829-832.Applicant
El Bouchairi, B.; Bernede, J.C.; Burgaud, P., Properties of Ag2-xSe1+x/n-Sl diodes, Thin Solid Films 110 (1983) 107-113.Applicant
El Gharras, Z.; Bourahla, A.; Vautier, C., Role of photoinduced defects in amorphous GexSe 1-x photoconductivity, J. Non-Cryst. Solids 155 (1993) 171-179.Applicant
El Ghrandi, R.; Calas, J.; Galibert, G.; Averous, M., Silver photodissolution in amorphous chalcogenide thin films, Thin Solid Films 218 (1992)259-273.Applicant
El Chrandi, R.; Calas, J.; Galibert, G., Ag dissolution kinetics in amorphous GeSE5.5 thin films from “in-situ” resistance measurments vs time, Phys. Stat. Sol. (a) 123 (1991) 451-460.Applicant
El-kady, Y.L., The threshold switching in semiconducting glass Ge21Se17Te52, Indian J. Phys. 70A (1996) 507-516.Applicant
Elliott, S.R., A unified mechanism for metal photodissolution in amorphous chalcogenide materials, J. Non-Cryst. Solids 130 (1991) 85-97.Applicant
Elliott, S.R., Photodissolution of metals in chalcogenide glasses: A unified mechanism, J. Non-Cryst. Solids 137-138 (1991) 1031-1034.Applicant
Elsamanoudy, M.M.; Hegab, N.A.; Fadel, M., Conduction mechanism in the pre-switching state of thin films containing Te As Ge Si Vacuum 45 (1995) 701-707.Applicant
El-Zahed, H.; El-Korashy, A., Influence of composition on the electric and optical properties of Ge20BixSe80-x films, Thin Solid Films 376 (2000) 236-240.Applicant
Fadel, M., Switching phenomenon in evaporated Se-Ge-As thin films of amorphous chalcogenide glass, Vacuum 44 (1993) 851-855.Applicant
Fadel, M.; El-Shair, H.T., Electrical, thermal and optical properties of Se75Ge7Sb18, Vacuum 43 (1992) 253-257.Applicant
Feng, X. ;Bresser, W.J.; Boolchand, P., Direct evidence for stiffness threshold in Chalcogenide glasses, Phys. Rev. Lett. 78 (1997) 4422-4425.Applicant
Feng, X.; Bresser, W.J.; Zhang, M.; Goodman, B.; Boolchand, P., Role of network connectivity on the elastic, plastic and thermal behavior of covalent glasses, J. Non-Cryst. Solids 222 (1997) 137-143.Applicant
Fischer-Colbrie, A.: Bienenstock, A.; Fuosa, P.H.; Marcus, M.A., Structure and bonding in photodiffused amorphous Ag-GeSe2 thin films, Phys. Rev. B 38 (1988) 12388-12403.Applicant
Fleury, G.; Hamou, A.; Viger, C.; Vautier, C., Conductivity and crystallization of amorphous selenium, Phys. Stat. Sol. (a) 64 (1981) 311-316.Applicant
Fritzsche, H, Optical and electrical energy gaps in amorphous semiconductors, J. Non-Cryst: Solids 6 (1971) 49-71.Applicant
Gates, B.; Wu, Y.; Yin, Y.; Yang, P.; Xia, Y., Single-crystalline nanowires of Ag2Se can be synthesized by templating against nanowires of trigonal Se, J. Am. Chem. Soc. (2001) currently ASAP.Applicant
Gosain, D.P.; Nakamura, M.; Shimizu, T.; Suzuki, M.; Okano, S., Nonvolatile memory based on reversible phase transition phenomena in telluride glasses, Jap. J. Appl. Phys. 28 (1989) 1013-1018.Applicant
Guin, J.-P.; Rouxel, T.; Karyvin, V.; Sangleboeuf. J.-C.; Serre, I.; Lucas, J., indentation creep of Ge-Se chalcongenide glasses below Tg: elastic recovery and non-Newtonian flow, J. Non-Cryst. Solids 298 (2002) 260-269.Applicant
Guin, J.-P.; Rouxel, T.; Sangleboeuf, J.-C; Metscoet, I.; Lucas, J., Hardness, toughness, and scratchability f germanium-selenium chalcogenide glass s, J. Am. Ceram. Soc. 85 (2002) 1545-52.Applicant
Gupta, Y.P., On electrical switching and memory effects in amorphous chalcogenides, J. Non-Cryst. Sol. 3 (1970) 146-154.Applicant
Haberland, D.R.; Stiegler, H., New experiments on the charge-controlled switching effect in amorphous semiconductors, J. Non-Cryst. Solids B-10 (1972) 408-414.Applicant
Halfz, M.M.; Ibrahim, M.M.; Dongol, M.; Hammad, F.H., Effect of composition on the structure and electrical properties of As-Se-Cu glasses, J. Apply. Phys. 54 (1983) 1950-1954.Applicant
Hajto, J.; Rose, M.J.; Osborne, I.S.; Snell, A.J.; Le Comber, P.G.; Owen, A.E., Quantitation effects in metal/a-Sl:H/metal devices, Int. J. Electronics 73 (1992) 911-913.Applicant
Hajto, J.; Hu, J.; Snell, A.J.; Turvey, K.; Rose, M., DC and AC measurements on metal/a-Sl:H/metal room temperature quantised resistance devices, J. Non-Cryst. Solids 266-269 (2000) 1058-1061.Applicant
Hajto, J.; McAuley, B.; Snell, A.J.; Owen, A.E., Theory of room temperature quantized resistance effects in metal-a-Sl:H-metal thin film structures, J. Non-Cryst. Solids 198-200 (1996) 825-828.Applicant
Hajto, J.; Owen, A.E.; Snell, A.J.; Le Comber, P.G.; Rose, M.J., Analogue memory and ballistic electron effects in metal-amorphous silicon structures, Phil. Mag. B 63 (1991) 349-369.Applicant
Hayashi, T.; Ono, Y.; Fukaya, M.; Kan, H., Polarized memory switching in amorphous Se film, Japan. J. Appl. Phys. 13 (1974) 1163-1164.Applicant
Hegab, N.A.; Fadel, M.; Sedeek, K., Memory switching phenomena in thin films of chalcogenide semiconductors, Vacuum 45 (1994) 459-462.Applicant
Helbert et al., Intralevel hybrid resist process with submicron capatiblity, SPIE vol. 333 Submicron Lithography, pp. 24-29 (1982).Applicant
Hilt, Dissertation: Materials characterization of Silver Chalcogenide Programmable Metalization Cells, Arizona State University, pp. Title p.-114 (UMI Company, May 1999).Applicant
Holmquist et al., Reaction and Diffusion in Silver-Arsenic Chalcogenide Glass Systems, 52 J. Amer. Ceram. Soc., No. 3-4, pp. 183-188 (Mar.-Apr. 1979).Applicant
Hong, K.S.; Speyer, R.F., Switching behavior in II-IV-V2 amorphous semiconductor systems, J. Non-Cryst. Solids 116 (1990) 191-200.Applicant
Hosokawa, S., Atomic and electronic structures of glassy GexSe1-x around the stiffness threshold composition, J. Optoelectronics and Advanced Materials 3 (2001) 199-214.Applicant
Hu, J.; Snell, A.J.; Hajot, J.; Owen, A.E., Constant current forming in Crip+a-/Si:H/V thin film devices, J. Non-Cryst. Solids 227-230 (1998) 1187-1191.Applicant
Hu, J.; Hajto, J.; Snell, A.J.; Owen, A.E.; Rose, M.J., Capacitance anomely near the metal-non-metal transition in Cr-hydrogenated amorphous Sl-V thin-film devices, Phil. Mag. B. 74 (1996) 37-50.Applicant
Hu, J..; Snell, A.J.; Hajot, J.; Owen, A.E., Current-induced instability in Cr-p+a-Si:H-V thin film devices, Phil. Mag. B 80 (2000) 29-43.Applicant
Huggett et al., Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6, 42 Appl. Phys. Lett., No. 7, pp. 592-594 (Apr. 1983).Applicant
Iizima, S.; Sugi, M.; Kikuchl, M.; Tanaka, K., Electrical and thermal properties of semiconducting glasses As-Te-Ge, Solid State Comm. 8 (1970) 153-155.Applicant
Ishikawa, R.; Kikuchi, M., Photovoltaic study on the photo-enhanced diffusion of Ag in amorphous films of Ge2S3, J. Non-Cryst. Solids 35 & 36 (1980) 1061-1066.Applicant
Iyetomi, H.; Vashishta, P.; Kalia, R.K., Incipient phase separation in Ag/Ge/Se glasses; clustering of Ag atoms, J. Non-Cryst. Solids 262 (2000) 135-142.Applicant
Jones, G.; Collins, R.A., Switching properties of thin selenium films under pulsed bias, Thin Solid Films 40 (1977) L15-L16.Applicant
Joullie, A.M.; Marucchi, J., On the DC electrical conduction of amorphous As2Se7 before switching, Phys. Stat. Sol. (a) 13 (1972) K105-K109.Applicant
Joullie, A.M.; Marucchi, J., Electrical properties of the amorphous alloy As2Se5, Mat. Res. Bull. 8 (1973) 433-442.Applicant
Kaplan, T.; Adler, D., Electrothermal switching in amorphous semiconductors, J. Non-Cryst. Solids 8-10 (1972) 538-543.Applicant
Kawaguchi et al., Mechanism of photosurface deposition, 164-166 N. Non-Cryst. Solids, pp. 1231-1234 (1993).Applicant
Kawaguchi, T.; Maruno, S.; Elliott, S.R., Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems, J. Appl. Phys. 79 (1996) 9096-9104.Applicant
Kawaguchi, T.; Masui, K., Analysis of change in optical transmission spectra resulting from Ag photodoping in chalcogenide film, Japn. J. Appl. Phys. 26 (1987) 15-21.Applicant
Kawasaki, M.; Kawamura, J.; Nakamura, Y.; Aniya, M., Ionic conductivity of Agx(GeSe3)1-x (0<=×<=0.571) glasses, Solid state Ionics 123 (1999) 259-269.Applicant
Kluge, G.; Thomas, A.; Klabes, R.; Grotzschel, R., Silver photodiffusion in amorphous GexSe100-x, J. Non-Cryst. Solids 124 (1990) 186-193.Applicant
Kolobov, A.V., On the origin of p-type conductivity in amorphous chalcogenides, J. Non-Cryst. Solids 198-200 (1996) 728-731.Applicant
Kolobov, A.V., Lateral diffusion of silver in vitreous chalcogenide films, J. Non-Cryst. Solids 137-138 (1991) 1027-1030.Applicant
Korklnova, Ts.N.; Andrelchin, R.E.; Chalcogenide glass polarization and the type of contacts, J. Non-Cryst. Solids 194 (1996) 256-259.Applicant
Kotkata, M.F.; Afif, M.A.; Labib, H.H.; Hegab, N.A.; Abdel-Aziz, M.M., Memory switching in amorphous GeSeTl chalcogenide semiconductors films, Thin Solid Films 240 (1994) 143-146.Applicant
Kozicki et al., Silver incorporation in thin films of selenium rich Ge-Se glasses, International Congress on Glass, vol. 2, Extended Abstracts, Jul. 2001, pp. 8-9.Applicant
Michael N. Kozicki, 1. Programmabel Metallization Cell Technology Description, Feb. 18, 2000.Applicant
Michael N. Kozickik, Axon Technologies Corp. and Arizona State University, Presentation to Micron Technology, Inc., Apr. 6, 2000.Applicant
Kozicki et al., Applications of Programmable Resistance Changes In Metal-Doped Chalcogenides, Electrochemical Society Proceedings, vol. 99 13, 1999, pp. 298-309.Applicant
Kozicki et al., Nanoscale effects in devices based on chalcogenide solid solutions, Superlattices and Microstructures, vol. 27, No. 516-2000, pp. 485-488.Applicant
Kozicki et al., Nanoscale phase separation in Ag-Ge-Se glasses, Microelectronic Engineering 63 (2002) pp. 155-159.Applicant
Lakshminarayan, K.N.; Srivastava, K.K.; Panwar, O.S.; Dumar, A., Amorphous semiconductor devices: memory and switching mechanisms, J. Inst Electronics & Telecom. Engrs 27 (1981) 16-19.Applicant
Lal, M.; Goyal, N., Chemical bond approach to study the memory and threshold switching chalcogenide glasses, Indian Journal of pure & appl. phys. 29 (1991) 303-304.Applicant
Leimer, F.; Stotzel, H.; Kottwitz, A., Isothermal electrical polarisation of amorphous GeSe films with blocking Al contacts Influenced by Poole-Frenkel conduction, Phys. Stat. Sol. (a) 29 (1975) K129-K132.Applicant
Leung, W.; Cheung, N.; Neureuther, A.R., Photoinduced diffusion of Ag in GexSe1-x glass, Appl. Phys. Lett. 46 (1985) 543-545.Applicant
Matsuchita, T.; Yamagami, T.; Okuda, M., Polarized memory effect observed on Se-SnO2 system, Jap. J. Appl. Phys. 11 (1972) 1657-1662.Applicant
Matsuchita, T.; Yamagami, T.; Okuda, M., Polarized memory effect observed on amorphous selenium thin films, Jpn. J. Appl. Phys. 11 (1972) 606.Applicant
Mazurier, F.; Levy, M.; Souquet, J.L, Reversible and irreversible el ctical switching in TeO2-V2O5 based glasses, Journal de Physique IV 2 (1992) C2-185—C2-188.Applicant
McHardy et al., The dissolution of metals in amorphous chalcogenides and the effect o electron and ultraviolet radiation, 20 J. Phys. C.: Solid State Phys., pp. 4055-4075 (1987).Applicant
Messoussi, R.; Bernede, J.C.; Benhida, S.; Abachi, T.; Latef, A., Electrical characterization of M/Se structures (M=Nl,Bl), Mat. Chem. And Phys. 28 (1991) 253-258.Applicant
Mitkova, M.; Boolchand, P., Microscopic origin of the glass forming tendency in chalcogenides and constraint theory, J. Non-Cryst. Solids 240 (1998) 1-21.Applicant
Mitkova, M.; Kozicki, M.N., Silver incorporation in Ge-Se glasses used in programmable metallization cell devices, J. Non-Cryst. Solids 299-302 (2002) 1023-1027.Applicant
Mitkova, M.; Wang, Y.; Boolchand, P., Dual chemical role of Ag as an additive in chalcogenide glasses, Phys. Rev. Lett. 83 (1999) 3848-3851.Applicant
Miyatani, S.-y., Electronic and ionic conduction In (AgxCu1-x)2Se, J. Phys. Soc. Japan 34 (1973) 423-432.Applicant
Miyatani, S.-y., Electrical properties of Ag2Se, J. Phys. Soc. Japan 13 (1958) 317.Applicant
Miyatani, S.-y., Ionic conduction in beta-Ag2Te and beta-Ag2Se, Journal Phys. Soc. Japan 14 (1959) 996-1002.Applicant
Mott, N.F., Conduction in glasses containing transition metal ions, J. Non-Cryst. Solids 1 (1968) 1-17.Applicant
Nakayama, K.; Kitagawa, T.; Ohmura, M.; Suzuki, M., Nonvolatile memory based on phase transitions in chalcogenide thin films, Jpn. J. Appl. Phys. 32 (1993) 564-569.Applicant
Nakayama, K.; Kojima, K.; Hayakawa, F.; Imai, Y.; Kitagawa, A.; Suzuki, M., Submicron nonvoltile memory cell based on reversible phase transition in chalcogenide glasses, Jpn. J. Appl. Phys. 39 (2000) 6157-6161.Applicant
Nang, T.T.; Okuda, M.; Matsushita, T.; Yokota, S.; Suzuki, A., Electrical and optical parameters of GexSe1-x amorphous thin films, Jap. J. App. Phys. 15 (1976) 849-853.Applicant
Narayanan, R.A.; Asokan, S.; Kumar, A., Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses, Phys. Rev. B 54 (1996) 4413-4415.Applicant
Neale, R.G.; Aseltine, J.A., The application of amorphous materials to computer memories, IEEE transactions on electron dev. Ed-20 (1973) 195-209.Applicant
Ovshinsky S.R.; Fritzsche, H., Reversible structural transformations in amorphous semiconductors for memory and logic, Mettalurgical transactions 2 (1971) 641-645.Applicant
Ovshinsky, S.R., Reversible electrical switching phenomena in disordered structures, Phys. Rev. Lett. 21 (1968) 1450-1453.Applicant
Owen, A.E.; LeComber, P.G.; Sarrabayrouse, G.; Spear, W.E., New amorphous-silicon electrically programmable nonvolatile switching device, IEE Proc. 129 (1982) 51-54.Applicant
Owen, A.E.; Firth, A.P.; Ewen, P.J.S., Photo-induced structural and physico-chemical changes in amorphous chalcogenide semiconductors, Phil. Mag. B 52 (1985) 347-362.Applicant
Owen, A.E.; Le Comber, P.G.; Hajto, J.; Rose, M.J.; Snell, A.J., Switching in amorphous devices, Int. J. Electronics 73 (1992) 897-906.Applicant
Owen et al., Metal-Chalcogenide Photoresists for High Resolution Lithography and Sub-Micron Structures, Nanostructure Physics and Fabrication, pp. 447-451 (M. Reed ed. 1989).Applicant
Pearson, A.D.; Miller, C.E., Filamentary conduction in semiconducting glass diodes, App. Phys. Lett. 14 (1969) 280-282.Applicant
Pinto, R.; Ramanathan, K.V., Electric field induced memory switching in thin films of the chalcogenide system Ge-As-Se, Appl. Phys. Lett. 19 (1971) 221-223.Applicant
Popescu, C., The effect of local non-uniformities on thermal switching and high field behavior of structures, with chalcogenide glasses, Solid-state electronics 18 (1975) 671-681.Applicant
Popescu, C.; Croitoru, N., The contribution of the lateral thermal instability to the switching phenomenon, J. Non-Cryst. Solids 8-10 (1972) 531-537.Applicant
Popov, A.I.; Galler, I.KH.; Shemetova, V.K., Mem ry and threshold switcing effects in amorphous selenium, Phys. Stat. Sol. (a) 44 (1977) K71-K73.Applicant
Uemura, O.; Kameda, Y.; Kokai, S.; Satow, T., Thermally induced crystallization of amorphous Ge0.4Se0.6, J. Non-Cryst. Solids 117-118 (1990) 219-221.Applicant
Uttecht, R.; Stevenson, H.; Sie, C.H.; Griener, J.D.; Raghavan, K.S., Electric field induced filament formation in As-Te-Ge glass, J. Non-Cryst. Solids 2 (1970) 358-370.Applicant
Viger, C.; Lefrancois, G.; Fleury, G., Anomalous behaviour of amorphous selenium films, J. Non-Cryst. Solids 33 (1976) 267-272.Applicant
Vodenicharov, C.; Parvanov,S.; Petkov,P., Electrode-limited currents in the thin-film M-GeSe-M system, Mat. Chem. And Phys. 21 (1989) 447-454.Applicant
Wang, S.-J.; Misium, G.R.; Camp, J.C.; Chen, K.-L.; Tigelaar, H.L., High-performance Metal/silicide antifuse, IEEE electron dev. Lett. 13 (1992)471-472.Applicant
Weirauch, D.F., Threshold switching and thermal filaments in amorphous semiconductors, App. Phys. Lett. 16 (1970) 72-73.Applicant
West, W.C.; Sieradzki, K.; Kardynal, B.; Kozicki, M.N., Equivalent circuit modeling of the Ag|As0.24S0.36Ag0.40|Ag System prepared by photodissolution of Ag, J. Electrochem. Soc. 145 (1998) 2971-2974.Applicant
West, W.C., Elecrically erasable non-volatile memory via electrochemical deposition of multifractal aggregates, Ph.D. Dissertation, ASU 1998.Applicant
Zhang, M.; Mancini, S.; Bresser, W.; Boolchand, P., Variation of glass transition temperature, Tg, with average coordination number, <m>, in network glasses: evidence of a threshold behavior in the slope |dTg/d<m>| at the rigidity percolation threshold (<m>=2.4), J. Non-Cryst. Solids 151 (1992) 149-154.Applicant
Prakash, S.; Asokan, S.; Ghare, D.B., Easily reversible memory switching in Ge-As-Te glasses, J. Phys. D: Appl. Phys. 29 (1996) 2004-2008.Applicant
Rahman, S.; Sivarama Sastry, G., Electronic switching in Ge-Bi-Se-Te glasses, Mat. Sci. and Eng. B12 (1992) 219-222.Applicant
Ramesh, K.; Asokan, S.; Sangunni, K.S.; Gopal, E.S.R., Electrical Switching in germanium telluride glasses doped with Cu and Ag, Appl. Phys. A 69 (1999) 421-425.Applicant
Rose,M.J.;Hajto,J.;Lecomber,P.G.;Gage,S.M.;Choi,W.K.;Snell,A.J.;Owen,A.E., Amorphous silicon analogue memory devices, J. Non-Cryst. Solids 115 (1989) 168-170.Applicant
Rose,M.J.;Snell,A.J.;Lecomber,P.G.;Hajto,J.;Fitzgerald,A.G.;Owen,A.E., Aspects of non-volatility in a -Si:H memory devices, Mat. Res. Soc. Symp. Proc. V 258, 1992, 1075-1080.Applicant
Schuocker, D.; Rieder, G., On the reliability of amorphous chalcogenide switching devices, J. Non-Cryst. Solids 29 (1978) 397-407.Applicant
Sharma, A.K.; Singh, B., Electrical conductivity measurements of evaporated selenium films in vacuum, Proc. Indian Natn. Sci. Acad. 46, A, (1980) 362-368.Applicant
Sharma, P., Structural, electrical and optical properties of silver selenide films, Ind. J. Of pure and applied phys. 35 (1997) 424-427.Applicant
Shimizu et al., The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses, 46 B. Chem Soc. Japan, No. 12, pp. 3662-3365 (1973).Applicant
Snell, A.J.; Lecomber, P.G.; Hajto, J.; Rose, M.J.; Owen, A.E.; Osborne, I.L., Analogue memory effects in metal/a-Si:H/metal memory devices, J. Non-Cryst. Solids 137-138 (1991) 1257-1262.Applicant
Snell, A.J.; Hajto, J.;Rose, M.J.; Osborne, L.S.; Holmes, A.; Owen, A.E.; Gibson, R.A.G., Analogue memory effects in metal/a-Si:H/metal thin film structures, Mat. Res. Soc. Symp: Proc. V 297, 1993, 1017-1021.Applicant
Steventon, A.G., Microfilaments in amorphous chalcogenide memory devices, J. Phys. D: Appl. Phys. B (1975) L120-L122.Applicant
Steventon, A.G., The switching mechanisms in amorphous chalcogenide memory devices, J. Non-Cryst. Solids 21 (1976) 319-329.Applicant
Stocker, H.J., Bulk and thin film switching and memory effects in semiconducting chalcogenide glasses, Appl Phys. Lett. 15 (1969) 55-57.Applicant
Tanaka, K., Ionic and mixed conductions in Ag photodoping process, Mod. Phys. Lett B 4 (1990) 1373-1377.Applicant
Tanaka, K.; Ilzima, S.; Sugi, M.; Okada, Y.; Kikuchi, M., Thermal effects on switching phenomenon in chalcogenide amorphous semiconductors, Solid State Comm. 8 (1979) 387-389.Applicant
Thornburg, D.D., Memory switching in a Type I amorphous chalcogenide, J. Elect Mat. 2 (1973) 3-15.Applicant
Thornburg, D.D., Memory switching in amorphous arsenic triselenide, J. Non-Cryst. Solids 11 (1972) 113-120.Applicant
Thornburg, D.D.; White, R.M., Electric field enhanced phase separation and memory switching in amorphous arsenic triselenide, Journal(??) (1972) 4609-4612.Applicant
Tichy, L.; Ticha, H., Remark on the glass-forming ability in GexSe1-x and AsxSe1-x systems, J. Non-Cryst. Solids 261 (2000) 277-281.Applicant
Titus, S.S.K.; Chatterjee, R.; Asokan, S., Electrical switching and short-range order in As-Te glasses, Phys. Rev. B 48 (1993) 14650-14652.Applicant
Tranchant,S.;Peytavin,S.;Ribes,M.:Flank,A.M.;Dexpert,H.;Lagarde,J.P., Silver chalcogenide glasses Ag-Ge-Se: Ionic conduction and exafs structural investigation, Transport-structure relations in fast ion and mixed conductors proceedings of the 6th Riso International symposium, Sep. 9-13, 1985.Applicant
Tregoust, Y.; Bemed , J.C., Silver m vements in Ag2Te thin films: switching and memory effects, Thin Solid Films 57 (1979) 49-54.Applicant
Abdel-All, A.; Elshafie,A.; Elhawary, M.M., DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass, Vacuum 59 (2000) 845-853.Applicant
Adler, D.; Moss, S.C., Amorphous memories and bistable switches, J. Vac. Sci. Technol. 9 (1972) 1182-1189.Applicant
Adler, D.; Henisch, H.K.; Mott, S.N., The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys. 50 (1978) 209-220.Applicant
Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel, M., Electrical and thermal properties of chalcogenide glass system Se75Ge25-xSbx, Appl. Phys. A 55 (1992) 167-169.Applicant
Afifi,M.A.; Labib, H.H.; Fouad, S.S.; El-Shazly, A.A., Electrical & thermal conductivity of the amorphous semiconductor GexSe1-x, Egypt, J. Phys. 17 (1986) 335-342.Applicant
Alekperova, Sh.M.; Gadzhieva, G.S., Current-Voltage characteristics of Ag2Se single crystal near the phase transition, Inorganic Materials 23 (1987) 137-139.Applicant
Aleksiejunas, A.; Cesnys, A., Switching phenomenon and memory effect in thin-film heterojunction of polycrystalline selenium-silver selenide, Phys. Stat. Sol. (a) 19 (1973) K169-K171.Applicant
Angell, C.A., Mobile ions in amorphous solids, Annu. Rev. Phys. Chem. 43 (1992) 693-717.Applicant
Aniya, M., Average electronegativity, medium-range-order, and ionic conductivity in superionic glasses, Solid state Ionics 136-137 (2000) 1085-1089.Applicant
Asahara, Y.; Izumitani, T., Voltage controlled switching in Cu-As-Se compositions, J. Non-Cryst. Solids 11 (1972) 97-104.Applicant
Asokan, S.; Prasad, M.V.N.; Parthasarathy, G.; Gopal, E.S.R., Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Phys. Rev. Lett. 62 (1989) 808-810.Applicant
Axon Technologies Corporation, Technology Description: Programmable Metalization Cell(PMC), pp. 1-6 (Pre-May 2000).Applicant
Baranovskii, S.D.; Cordes, H., On the conduction mechanism in ionic glasses, J. Chem. Phys. 111 (1999) 7546-7557.Applicant
Belin, R.; Taillades, G.; Pradel, A.; Ribes, M., Ion dynamics in superionic chalcogenide glasses: complete conductivity spectra, Solid State Ionics 136-137 (2000) 1025-1029.Applicant
Belin, R.; Zerouale, A.; Pradel, A.; Ribes, M., Ion dynamics in the argyrodite compound Ag7GeSe5I: non-Arrhenius behavior and complete conductivity spectra, Solid State Ionics 143 (2001) 445-455.Applicant
Benmore, C.J.; Salmon, P.S., Structure of fast ion conducting and semiconducting glassy chalcogenide alloys, Phys. Rev. Lett. 73 (1994) 264-267.Applicant
Bernede, J.C., Influence du metal des electrodes sur les caracteristiques courant-tension des structures M-Ag2Se-M, Thin solid films 70 (1980) L1-L4.Applicant
Bernede, J.C., Polarized memory switching in MIS thin films, Thin Solid Films 81 (1981) 155-160.Applicant
Bernede, J.C., Switching and silver movements in Ag2Se thin films, Phys. Stat. Sol (a) 57 (1980) K101-K104.Applicant
Bernede, J.C.; Abachi, T., Differential negative resistance in metal/insulator/metal structures with an upper bilayer electrode, Thin solid films 131 (1985) L61-L64.Applicant
Bernede, J.C.; Conan, A.; Fousenan't, E.; El Bouchairi, B.; Goureaux, G., Polarized memory switching effects in Ag2Se/Se/M thin film sandwiches, Thin solid films 97 (1982) 165-171.Applicant
Berned , J.C.; et al., Transition from S- to N-type differential negative r sistance in Al-Al2O3-Ag2-xSe1+x thin film structures, Phys. Stat. Sol. (a) 74 (1982) 217-224.Applicant

Abstract