Duplexer and mobile communication device using the same

[0002] 1. Field of the Invention

[0003] The present invention relates to high-frequency complex components and mobile communication devices including the same, and more particularly, the present invention relates to a high-frequency complex component obtained by connecting a receiving-side LC parallel resonant-type filter to a surface acoustic wave filter in a cascade arranged and to a mobile communication device including the same.

[0004] 2. Description of the Related Art

[0005] In Japan, a PDC (Personal Digital Cellular) method operating in the 800 MHz band or the 1.5 GHz band is presently adopted in mobile communication devices and corresponding frequency bands are reserved for mobile transmission and station transmission. That is, the transmission band and the reception band of mobile devices are reserved, so that simultaneous transmission and reception are performed using one channel for the transmission band and one channel for the reception band. The interval between the operating channel for transmission and the operating channel for reception is controlled so as to be always constant. At this time, most duplexers, which are used for sharing one antenna for transmission and reception, often have a construction, in which a dielectric filter is used, as proposed in Japanese Unexamined Patent Application Publication No. 9-83214.

[0006] FIG. 8 shows a block diagram of a conventional duplexer disclosed in Japanese Unexamined Patent Application Publication No. 9-83214. A duplexer 50 includes a branch circuit 51, a receiving-side dielectric filter 52 having a dielectric coaxial resonator, a surface acoustic wave filter 53, and a transmitting-side dielectric filter 54 having a dielectric coaxial resonator. The branch circuit 51, the receiving-side dielectric filter 52, and the surface acoustic wave filter 53 are connected between a first terminal 501 and a second terminal 502. The branch circuit 51 and the transmitting-side dielectric filter 54 are connected between the first terminal 501 and a third terminal 503. In such a construction, an antenna ANT is connected to the first terminal 501, the second terminal 502 is connected to a reception circuit R_x, and the third terminal 503 is connected to a transmission circuit T_x.

[0007] However, according to the conventional duplexer, use of a dielectric filter causes the duplexer to become large and adjustment of the central frequency becomes difficult. As a result, an increase in the size of a mobile communication device and deterioration of the characteristics thereof become problems.

[0008] This is because the length of the dielectric filter is equal to λ/4, where λ is the wavelength of a reception signal or the wavelength of a transmission signal. For example, the length of the filter is 5 cm in the 1.5 GHz band and it is as long as 9.375 cm in the 800 MHz. Although the dielectric element constituting the dielectric filter must be chiseled in order to adjust the central frequency of the dielectric filter, it is very difficult to apply fine adjustment to the dielectric.

[0009] In order to overcome the problems described above, preferred embodiments of the present invention provide a duplexer which is easy to miniaturize and in which the central frequency is easily adjusted, and also provide a mobile communication device including such a novel duplexer.

[0010] According to a first preferred embodiment of the present invention, a duplexer preferably includes a branch circuit connected to an antenna and arranged to branch to a receiving side and a transmitting side, a receiving-side LC parallel resonant-type filter connected to the receiving-side of the branch circuit and arranged to cause a reception signal to be passed and a transmission signal to be attenuated, a surface acoustic wave filter connected to the receiving-side LC parallel resonant-type filter defining a subsequent stage of the receiving-side LC parallel resonant type filter and arranged to cause the reception signal to be passed and the area of the high-frequency side of the reception signal to be attenuated, and a transmitting-side LC parallel resonant-type filter connected to the transmitting-side of the branch circuit and arranged to cause the transmission signal to be passed and the reception signal to be attenuated.

[0011] Use of an LC parallel resonant-type filter enables the duplexer to be easily adapted to the frequency of the reception signal or the frequency of the transmission signal by changing the values of the inductors and the capacitors without changing the sizes or the appearances of the inductors and the capacitors that constitute the LC parallel resonant-type filter. Therefore, miniaturization of the duplexer is facilitated along with the adjustment of the central frequency.

[0012] The branch circuit may include a balun element.

[0013] Since a branch circuit preferably includes a balun element, both of a terminal connected to a transmission circuit observed from a terminal connected to a reception circuit and the terminal connected to the reception circuit observed from the terminal connected to the transmission circuit are open in terms of a high frequency. Therefore, since complete isolation is obtained between these terminals, the reception signal is prevented from interfering with the transmission signal side, and vice versa. Consequently, the reliability of the duplexer is improved.

[0014] A duplexer may further include a multi-layer substrate defined by a laminated body having a plurality of dielectric layers. In the duplexer, the branch circuit, the receiving side LC parallel resonant-type filter, and the transmitting side LC parallel resonant-type filter may be integrated in the multi-layer substrate and the surface acoustic wave filter may be mounted on the multi-layer substrate.

[0015] A multi-layer substrate is preferably formed by laminating a plurality of dielectric layers, the multi-layer substrate which the branch circuit, a receiving-side LC parallel resonant-type filter, and a transmitting-side LC parallel resonant-type filter are integrated therein and a surface acoustic wave filter is mounted thereon. Accordingly, matching adjustment can be easily performed between the branch circuit and the receiving-side LC parallel resonant-type filter, between the receiving-side LC parallel resonant-type filter and the surface acoustic wave filter, and between the branch circuit and the transmitting side LC parallel resonant-type filter. This eliminates the necessity of matching circuits that perform corresponding matching adjustment. Therefore, the duplexer can be further miniaturized. In addition, loss due to wiring between the branch circuit and the receiving-side LC parallel resonant-type filter, between the receiving-side LC parallel resonant-type filter and the surface acoustic wave filter, and between the branch circuit and the transmitting-side LC parallel resonant-type filter can be minimized. Therefore, the overall loss of the duplexer is greatly minimized.

[0016] The connection of each of the branch circuit, the receiving-side LC parallel resonant-type filer, the surface acoustic wave filter, and the transmitting-side LC parallel resonant-type filter can be provided and contained within the multi-layer substrate. Therefore, further miniaturization of the duplexer is achieved.

[0017] According to a second preferred embodiment of the present invention, a mobile communication device includes a duplexer according to the first preferred embodiment of the present invention.

[0018] Since the duplexer which can be easily miniaturized and which can have easily the central frequency adjusted is included, a miniaturized and high-performance mobile communication device can be obtained.

[0019] Other features, elements, characteristics and advantages of the present invention will become apparent from the following detailed description of preferred embodiments with reference to the attached drawings.

[0020] FIG. 1 is a block diagram of a duplexer according to a preferred embodiment of the present invention;

[0021] FIG. 2 is an actual circuit diagram of the duplexer shown in FIG. 1;

[0022] FIG. 3 is a perspective view of the duplexer shown in FIG. 2;

[0023] FIGS. 4A to 4H are top views of a first dielectric layer to a seventh dielectric layer, respectively, and FIG. 4H is a bottom view of the seventh dielectric layer;

[0024] FIG. 5 is a graph showing a transmission characteristic of the duplexer shown in FIGS. 4A to 4H;

[0025] FIG. 6 is another actual circuit diagram of the duplexer shown in FIG. 1;

[0026] FIG. 7 is a block diagram showing an RF unit of a portable telephone, which is a common mobile communication device; and

[0027] FIG. 8 is a block diagram showing a conventional duplexer.

[0028] Hereinafter, preferred embodiments according to the present invention are described with reference to drawings.

[0029] FIG. 1 is a block diagram of a duplexer according to a preferred embodiment of the present invention. A duplexer 10 preferably includes first to third terminals 101 to 103, a branch circuit 11, a receiving-side LC parallel resonant-type filter 12, a surface acoustic wave filter 13, and a transmitting-side LC parallel resonant-type filter 14.

[0030] The branch circuit 11, the receiving-side LC parallel resonant-type filter 12, and the surface acoustic wave filter 13 are connected between the first terminal 101 and the second terminal 102. The branch circuit 11 and the transmitting-side LC parallel resonant-type filter 14 are connected between the first terminal 101 and the third terminal 103.

[0031] In such a construction, an antenna ANT is connected to the first terminal 101, a reception circuit R_xis connected to the second terminal 102, and a transmission circuit T_xis connected to the third terminal 103.

[0032] FIG. 2 is an actual circuit diagram of the duplexer shown in FIG. 1. The branch circuit 11 includes inductors L_s11 and L_s12. The L_s11 is connected between a first terminal 111, which is the first terminal 101 of the duplexer 10, and a second terminal 112, which is connected to the receiving-side LC parallel resonant-type filter 12. The L_s12 is connected between the first terminal 111 and a third terminal 113 connected to the transmitting-side LC parallel resonant-type filter 14.

[0033] The receiving-side LC parallel resonant-type filter 12 includes inductors L_r1 to L_r3 and capacitors C_r1 to C_r5. The inductor L_r1 and the capacitor C_r1 are connected in parallel to constitute an LC parallel resonator Q_r1 the inductor L_r2 and the capacitor C_r2 are connected in parallel to constitute an LC parallel resonator Q_r2, and the inductor L_r3 and the capacitor C_r3 are connected in parallel to constitute an LC parallel resonator Q_r3. The LC parallel resonators Q_r1 to Q_r3 are connected in a cascade arrangement via inter-stage capacitors C_r4 and C_r5 between a first terminal 121 connected to the branch circuit 11 and a second terminal 122 connected to the surface acoustic wave filter 13.

[0034] The transmitting-side LC parallel resonant-type filter 14 includes inductors L_t1 to L_t3 and capacitors C_t1 to C_t5. The inductor L_t1 and the capacitor C_t1 are connected in parallel to constitute an LC parallel resonator Q_t1, the inductor L_t2 and the capacitor C_t2 are connected in parallel to constitute an LC parallel resonator Q_t2, and the inductor L_t3 and the capacitor C_t3 are connected in parallel to constitute an LC parallel resonator Q_t3. The LC parallel resonators Q_t1 to Q_t3 are connected in a cascade arrangement via inter-stage capacitors C_t4 and C_t5 between a first terminal 141 connected to the branch circuit 11 and a second terminal 142, which is the third terminal 103 of the duplexer 10.

[0035] FIG. 3 is a perspective view showing an actual construction of the duplexer in FIG. 2. The duplexer 10 preferably includes a multi-layer substrate 15 in which the branch circuit 11 (FIG. 2), the receiving-side LC parallel resonant-type filter 12 (FIG. 2), and the transmitting-side LC parallel resonant-type filter 14 (FIG. 2) are integrated. A bare-chip surface acoustic wave filter 13 is preferably mounted on the multi-layer substrate 15.

[0036] External terminals T1 to T4 are disposed on side surfaces from the top surface to the bottom surface of the multi-layer substrate 15 in which the external terminals T1 to T3 define the first terminal 101 to the third terminal 103, respectively, of the duplexer 10 and the external terminal T4 defines a ground terminal.

[0037] FIGS. 4A to 4G are top views of the dielectric layers constituting the multi-layer substrate of the duplexer in FIG. 3. FIG. 4H is a bottom view of the layer shown in FIG. 4G. The multi-layer substrate 15 is preferably formed by sequentially laminating, from the top, first to seventh dielectric layers 151 to 157 each including ceramic having a relative dielectric constant of approximately 6 and being made of main components including barium oxide, aluminum oxide, and silica, and then by firing them at a firing temperature of about 1000° C. or below.

[0038] Land L_afor mounting the surface acoustic wave filter 13 thereon and external terminals T1 to T4 are provided on the top surface of the first dielectric layer 151. Ground electrodes G_p1 and G_p2 are provided on the top surface of the second dielectric layer 152.

[0039] Strip line electrodes ST1 and ST2 are disposed on the top surface of the third dielectric layer 153. Capacitor electrodes C_p1 to C_p6 are provided on the top surface of the fourth dielectric layer 154.

[0040] Capacitor electrodes C_p7 to C_p14 are disposed on the top surface of the fifth dielectric layer 155. Capacitor electrodes C_p15 to C_p20 are provided on the top surface of the sixth dielectric layer 156.

[0041] Ground electrodes G_p3 and G_p4 are disposed on the top surface of the seventh dielectric layer 157. The external terminals T1 to T4 are disposed on the bottom surface of the seventh dielectric layer 157 (indicated by reference numeral 157uin FIG. 4H). Via-hole electrodes V_h1 to V_h6 are provided on the second dielectric layer 152 to the fifth dielectric layer 155 so as to go through the dielectric layers 152 to 155.

[0042] The first to seventh dielectric layers 151 to 157 are preferably obtained by mixing, along with a binding agent and other suitable material, dielectric ceramic having main components including barium oxide, aluminum oxide, and silica and which can be fired at, for example, a temperature between about 850° C. and about 1000° C., and forming this mixed material into sheets.

[0043] The strip line electrodes ST1 and ST2, the capacitor electrodes C_p1 to C_p20, the ground electrodes G_p1 to G_p4, the land L_a, and the external terminal T1 to T4 which include Ag, Pd, Ag—Pd, Cu, and other elements are correspondingly formed on the top surfaces or bottom surfaces of the first to seventh dielectric layers 151 to 157 by printing, sputtering, vacuum deposition or other suitable method.

[0044] The multi-layer substrate 15 is preferably obtained by laminating the first to seventh dielectric layers 151 to 157 and integrally firing them. The via-hole electrodes V_h1 to V_h6 provided inside the multi-layer substrate 15 each establish connections among the strip line electrodes ST1 and ST2, the capacitor electrodes C_p1 to C_p20, and the ground electrodes G_p1 and G_p2.

[0045] In the duplexer 10 having the above-described unique construction, the inductors L_s11 and L_s12 (FIG. 1) of the resonant circuit 11 are defined by the strip line electrodes ST11 and ST12.

[0046] Inductors L_r1 to L_r3 of the receiving-side LC parallel resonant-type filter 12 preferably include the via-hole electrodes V_h3 to V_h1, respectively.

[0047] The capacitor C_r1 of the receiving-side LC parallel resonant-type filter 12 is preferably defined by the capacitor electrode C_p17 and the ground electrode G_p3, the capacitor C_r2 preferably includes the capacitor electrode C_p16 and the ground electrode G_p3, the capacitor C_r3 is preferably defined by the capacitor electrode C_p15 and the ground electrode G_p3, the capacitor C_r4 preferably includes the capacitor electrodes C_p3, C_p2, C_p8, C_p10, C_p17, and C_p16, and the capacitor C_r5 preferably includes the capacitor electrodes C_p2, C_p1, C_p7, C_p9, C_p16, and C_p15.

[0048] Similarly, the inductors L_t1 to L_t3 of the transmitting-side LC parallel resonant-type filter 14 are defined by the via-hole electrodes V_h4 to V_h6, respectively.

[0049] In addition, the capacitor C_t1 of the transmitting-side LC parallel resonant-type filter 14 is defined by the capacitor electrode C_p18 and the ground electrode G_p4, the capacitor C_t2 is defined by the capacitor electrode C_p19 and the ground electrode G_p4, the capacitor C_t3 is defined by the capacitor electrode C_p20 and the ground electrode G_p4, the capacitor C_t4 preferably includes the capacitor electrodes C_p4, C_p5, C_p11, C_p13, C_p18, and C_p19, and the capacitor C_t5 preferably includes the capacitor electrodes C_p5, C_p6, C_p12, C_p14, C_p19, and C_p20.

[0050] FIG. 5 is a graph showing the transmission characteristic of the duplexer in FIGS. 4A to 4H. This transmission characteristic was measured between the first terminal 101 to be connected to the antenna ANT and the second terminal 102 to be connected to the reception circuit R_x. For comparison, a case is also shown in which the surface acoustic wave filter (dashed line) is not provided.

[0051] This drawing demonstrates that an attenuation pole of the receiving-side LC parallel resonant-type filter 12 is generated at around 1.98 GHz and a gain of −30 (dB) or below can be obtained at about 2.03 GHz or below and that an attenuation pole of the surface acoustic wave filter 13 is generated at around 2.28 GHz and a gain of at −30 (dB) or below can be obtained at about 2.26 GHz or more. That is, it is understood that the receiving-side LC parallel resonant-type filter 14 can attenuate a signal having approximately the transmission frequency and the surface acoustic wave filter 13 can attenuate around a high-frequency side of the reception signal.

[0052] FIG. 6 is another actual circuit diagram of the duplexer shown in FIG. 1. A duplexer 20 differs from the actual circuit in FIG. 2 in that the branch circuit 21 includes a balun element including inductors L_s21 and L_s22.

[0053] One end of the inductor L_s21 is connected to the first terminal 101 of the duplexer 20 and the other end thereof is grounded. One end of the inductor L_s21 is connected to the receiving-side LC parallel resonant-type filter 12 and the other end thereof is connected to the transmitting-side LC parallel resonant-type filter 14.

[0054] According to the duplexer of the above-described preferred embodiment, use of the LC parallel resonant-type filter enables the duplexer to easily adapt to the reception signal frequency or the transmission signal frequency, without changing the sizes of appearances of inductors and capacitors which constitute the LC parallel resonant-type filter, by changing the values of inductors or capacitors. Therefore, miniaturization and adjustment of the central frequency are facilitated. The outer dimensions of the duplexer in FIGS. 4A to 4H are, for example, approximately 9.4 mm×3.0 mm×2.0 mm.

[0055] The duplexer preferably includes the multi-layer substrate formed by laminating a plurality of dielectric layers. The branch circuit, the receiving-side LC parallel resonant-type filter, and the transmitting-side LC parallel resonant-type filter are integrated in the multi-layer substrate and the surface acoustic wave filter is mounted on the multi-layer substrate. Accordingly, matching adjustment is facilitated between the branch circuit and the receiving-side LC parallel resonant-type filter, between the receiving-side LC parallel resonant-type filter and the surface acoustic wave filter, and between the branch circuit and the transmitting-side LC parallel resonant-type filter, which eliminates necessities of the corresponding matching circuits for performing matching adjustment. Therefore, the duplexer is further miniaturized. In addition, wiring loss can be each improved between the branch circuit and the receiving-side LC parallel resonant-type filter, between the receiving-side LC parallel resonant-type filter and the surface acoustic wave filter, and between the branch circuit and the transmitting-side LC parallel resonant-type filter. Accordingly, the overall loss of the duplexer is greatly minimized.

[0056] Furthermore, the connection of each of the branch circuit, the receiving-side LC parallel resonant-type filter, the surface acoustic wave filter, and the transmitting-side LC parallel resonant-type filter can be provided in the multi-layer substrate. Therefore, furthermore miniaturization of the duplexer is achieved.

[0057] As in the duplexer in FIG. 6, when the branch circuit is constructed using the balun element, both of the third terminal connected to the transmission circuit observed from the second terminal connected to the reception circuit and the second terminal observed from the third terminal are open in terms of a high frequency. Therefore, since complete isolation can be obtained between the second terminal and the third terminal, the reception signal is prevented from interfering with the transmission signal side, and vice versa. Consequently, the reliability of the duplexer is greatly improved.

[0058] FIG. 7 is a block diagram showing an RF unit of a portable telephone, which is a common mobile communication device. The portable telephone includes the antenna ANT, a duplexer DPX, the reception circuit R_x, and the transmission circuit T_x.

[0059] The reception circuit R_xincludes a low-noise amplifier LNA, a band-pass filter BPF, and a mixer MIX. The transmission circuit includes a band-pass filter BPF, a high-powered amplifier PA, and a mixer MIX. One input of each of the mixer MIX of the reception circuit R_xand the mixer MIX of the transmission circuit T_xis connected to a synthesizer SYN generating a local oscillating signal.

[0060] At this time, the duplexer 10 shown in FIG. 2 or the duplexer 20 shown in FIG. 6 is used in the duplexer DPX constituting the RF unit 30 of the portable telephone.

[0061] According to the portable telephone the present preferred embodiment, since the duplexer in which adjustment of the central frequency is facilitated while miniaturization is facilitated is used, the miniaturized and high-performance portable telephone is realized.

[0062] In the duplexer according to various preferred embodiments of the present invention described above, the case is described in which the surface acoustic wave filter is mounted on the multi-layer substrate having the branch circuit, the receiving-side LC parallel resonant-type filter, and the transmitting-side LC parallel resonant-type filter integrated therein. Alternatively, the multi-layer substrate having the branch circuit, the receiving-side LC parallel resonant-type filter, and the transmitting-side LC parallel resonant-type filter integrated therein and the surface acoustic wave filter may be constructed so as to be implemented on a print-circuit board.

[0063] The upper portion of the surface acoustic wave filter may be coated with resin, a metal casing, or other suitable material.

[0064] While the present invention has been described with reference to what is presently considered to be the preferred embodiment, it is to be understood that the invention is not limited to the disclosed preferred embodiments. On the contrary, the invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.