Industrial vapor conveyance and deposition

[0002] This application is copending to application Ser. No.08/776,382 filed on Jan. 31, 1997, the disclosure of which is incorporated by reference herein in its entirety. Reference is made to and priority is claimed in respect of EP Application 94111991.9 of Aug. 1, 1994 and PCT Application PCT/EP95/02882 of Jul. 19, 1995.

[0003] 1. Field of the Invention

[0004] This invention relates to the industrial manufacture of new high-performance alloys, functional materials and ultrahigh-purity materials from the vapor phase, including PVD magnesium (PVD: physical vapor deposition), PVD aluminium, PVD titanium, PVD superalloys and PVD intermetallics, (sheets, bars, profiles, forgings, layers and surface films), “Thermal Barriers”, VD materials (VD: Vapor Deposition) of semiconductor technology, including elementary and/or porous silicon, and of distillation for extraction (recovery) and refining, i.e. for the production of high-purity elements, such as alkali, alkaline earth and rare earth metals, to production of high-purity and ultra-high-purity (elementary or basic) metals (transition metals, such as Zr, Cr etc.) and products of “clean-room technolgy” as such, to the production of pigments, of reinforcing components, (of alloys with dispersed) carbides, nitides, borides, oxides, silicides, fullerenes, magnets, of optical and electronic products, including the products of microelectronics, to the coating of the reinforcing components of composite materials, for the surface treatment of materials as such, and to the recycling of modern lightweight and functional materials and of lubricants as well as aqueous solutions beyond the vapor phase, the products deposited from the vapor phase assuming solid massive forms and/or solid powder forms, semifinished product forms and/or near-final contour forms in the elementary and/or alloy state, in the thermodynamically metastable or stable state, whether as metal or ceramic or as semiconductor, or being packaged in liquid form or racked off as a gaseous constituent.

[0005] In industrializing the manufacture of future products from the vapor phase, relatively long distances for the conveyanve and for the intermixing (for example, during alloying) and segregating (for example, during recycling) of the relevant vapors will have to be covered in an energy-efficient way. The length of the necessary vapor conveyance flow distances is determined, on the one hand, by the size (quantity and dimension) of the initial, intermediate and resulting products and, on the other hand, on the nature and number of the methods and operative process steps of alloying, distillation and conveyance of (in) the vapor phase. However, overcoming long vapor conveyance flow distances still always tended to involve the problem of high conveying capacities Q, indeed entirely irrespective of the thermal loading capacity and chemical reactivity of the plant materials with and in relation to the corresponding vapors. See Th. König et al., H. C. Starck GmbH & Co KG, D38642 Goslar, German Patent DE 4214720, 11.11.1993.

[0006] In vacuum technology, a distinction must be made, as regards results, between two pumping capacities: (i) the first pumping capacity must be applied in order to generate the vacuum, the underpressure or overpressure and/or the controlled atmospheric composition in a system which is virtually closed off relative to the environment, the environment having a pressure of one atmosphere under normal conditions; (ii) the second pumping capacity to be basically distinguished is used for producing controlled (suction) flow and (suction) conveyance movements in the vacuum, in the overpressure prevailing relative to the environment and/or in corresponding atmospheres composed in a controlled manner relative to the environment and/or in corresponding atmospheres composed in a controlled manner relative to the environment, said movements being independent of the absolute pressure value of the respective atmosphere in certain regions (particular to a specific pumping system). Just as a pump can generate an air draft under normal conditions, a pump can generate and drive a vapor flow under vacuum conditions, etc., and the pumping capacity can in various ways be uncoupled from the conveying capacity and, by controlling the conveying capacity, can be coupled to this again. The pump-unspecific pumping speed S at the inlet of a given vacuum pump station for a given vacuum chamber is a mechanical propulsion force which must be delimited relative to chemical and physical conveying operations and which is intended for the forced convection of the conveying, alloying or separating and converting operations involved. It is unimportant, in this case, whether the suction effect is produced by underpressure alone or in conjunction with a carrier gas. The pressure flow is that form of propulsion force of material conveyance which corresponds to the (technical) overpressure, whereas, in a vacuum, the suction flow is this particular form. This distinction, trivial per se, has hitherto greatly underestimated importance in light of the state of vacuvum technology and material production from the vapor phase (see F. Hehmann, F. W. Hugo, F.Müller and M. Raschke, German Patent Application P 44063334, Mar. 1, 1994, made by Leybold Durferrit GmbH, Hanau).

[0007] Gaseous suction flows are used (i) in the chemical and petrochemical industry for separating processes for the selection, for example of (for example, organic) solvents in waste air, in which the speed-determining step of diffusion through the diaphragm is controlled according to Fick's law of diffusion. Gaseous suction flows are also used (ii) in chemical vapor deposition processes (CVD), in which a chemical surface reaction and the amount of surface involved determine and limit the productivity of the CVD coating process. In the simplest form, this reaction reads as follows (cf. D. S. Rickerby and A. Matthews, Advanced Surface Coatings—A Handbook of Surface Engineerings, Blackie & Son Ltd, Glasgow G64 2NZ, 1991):

[0008] 2AX(g)+H₂→A(s)+2HX(g)  (1)

[0009] in which AX(g) is the gaseous reactant supplied (for example, fluorides, chlorides, bromides, carbonyls, volatile metallo-organic compounds), A is the material of the resulting surface layer (s), H(H₂) is hydrogen as a carrier and HX is the usually toxic and corrosive waste gas. In this case, the suction flow does not determine the speed-determining process step (and productivity limit), but is used primarily for operating safety. It is therefore also not surprising that, in CVD operations with simultaneously occuring and widely differing surface reaction speeds (the term “reaction kinetics” is avoided here, since it often relates to a reaction mechanism, the speed of which can be influenced by mechanism-independent variables), so-called “additives” are added to the reactants, in order to brake (!) the fastest reaction operation and achieve harmonization of all reaction operations on the corresponding surfaces, that is to say a control of the CVD process. It was thereby possible to achieve an accurate control of the composition and nature of the resulting phases by means of CVD processes. The increase in productivity specific to the CVD process was therefore concentrated on the development of suitable compositions of the react and gases supplied to the reaction (cf. D. C. Boyd, R. T. Haasch, D. R. Mantell, R. K. Schulze, J. F. Evans and W. L. Gladfelter, Chem. Mater. 1 (1989), p. 119.) and has consequently hitherto remained independent of the pumping speed S or of the conveying capacity Q which is applied for the waste-gas suction (!) flow.

[0010] This is an important reference point in the overall invention designated above: for the purpose of control (of a process), not to accelerate the fastest process step, or even merely to control it, but, above all things, to restrict it! This specific form of process control to increase productivity is the indispensable precondition for the industrialization of an advanced process and allows a better utilization of its inherent advantages. This maxim is pertinent only to those processes which operate in limited areas. Vapor deposition (irrespective of its form (for example, as (reacted) dust, powder, solid blank, etc.) or of its dimension) is such an area, since the fragmentation of matter (which is the decisive criterion for structural and chemical homogeneity controlling the properties of a material) further than down to the individual atom has hitherto also been pojntless for the manufacture (!) of new materials. In complete contrast to this is the rapid solidification, occuring hitherto, which operates in the micrometer fragmentation range and in which the operational fragmentation range is concentrated on the “cross-over” of the fragmentation medium (for example, in gas and water atomization) or, for example, on the “melt puddle” (in “melt-spinning”). In the case of rapid solidification from the melt, the corresponding increase in productivity remains a linear problem and, in actual fact, can be achieved only extensively, that is to say by lining up many “cross-overs”, etc., into a “linear” concept (cf. F. W. Baker, R. L. Kozarek and G. J. Hildeman. Proc. “Second Int. Conf. on Spray Forming”, Swansea, September 1315, 1993, edt. J. V. Wood, Woodhead Publishing Ltd, Cambridge CB1 6AH, UK, p. 395. and S. K. Das, D. Raybould, R. L. Bye and C. F. Chang, U.S. Pat. No. 4,718,475, January 1988.) with limited efficiency and inventive depth, thus contributing to the current dilemma of this profession.

[0011] For, as is known, it is necessary merely to overcome a particular energy barrier, and it needs no great invention to evaporate an infinite quantity of material. Furthermore, in comparison with the CVD and CVR (chemical vapor reaction) processes, physical vapor deposition processes (PVD) also lack a chemical material conversion reaction, and it therefore also cannot control the productivity of a PVD process. Temperature and potential gradients (that is to say, free convection, diffusion) have hitherto remained the predominant propulsion forces of the conveying operations in physical deposition processes (PVD) (cf. D. S. Rickerby and A. Matthews, Advanced Surface Coatings—A Handbook of Surface Engineerings, Blackie & Son Ltd, Glasgow G64 2NZ, 1991.). Consequently, the degrees of freedom and potentials for in novation of the PVD processes have hitherto remained unused. The PVD problem is not a genuine productivity problem, although it appears to be such at first sight in laboratory practise and from outside. Like the CVD and CVR problem, the PVD problem is primarily a question of quality arising as a result of the difficulty, in the case of high productivity, of also continuing to control concentration and phase selection as well as the homogeneity of these parameters in the product in an energy-efficient way.

[0012] 2. Description of the Related Art

[0013] F. Hehmann, EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 claimed for the first time a vapor deposition process which is driven by the pumping speed S and of which the conveying capacity (“throughput”) Q=q*P (q=e.g. volumetric conveying flow or speed q_v[m³/sec]) is controlled by forced convection, that is to say by a pump system which is external (that is to say, located outside the distance x between the vapor source and vapor deposition level (said distance being the shortest and being dependent on the plant and diaphragm design)), and for a given pumping speed, by the more detailed design of a “mass filter”, the porous diaphragm Diaphragm* (PD). The Diaphragm* is the main structural part of a controlled increase in productivity for vapor deposition, which is necessary (i) to initiate industrial manufacture of solid structural and functional materials as well as their resulting structural parts from the vapor phase, but also (ii) in order to refine the industrial manufacture of (thin) layers and (iii) surface treatment by (physical and chemical) vapor deposition. The Diaphragm* is a plant structural part which brakes a vapor suction flow driven by an external pump system (cf. CVD process) physically by reservoir formation and thereby makes it possible to achieve new, purely physical forms of control. It has the function of a diaphragm for controlling condensation in suction flow-driven vapor deposition processes, with the proviso that the appropriate gases or vapors experience a (stepped) lowering of the microscopic (that is to say, directly at the outlet of the flow ducts) and macroscopic static pressure (that is to say, the pressure in the vapor and/or deposition chambers separated by this diaphragm) at the interface between the separated chambers.

[0014] The Diaphragm* claimed in F. Hehmann, EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 relates not only to a completely new diaphragm family (pure porous and tubular diaphragm asymetric in x-translation (that is to say, the surface perpendicular and/or the shortest transdiaphragm distance and having a selectivity S_k=1 or near to 1), but to a new diaphragm species as such. All diaphragm families have hitherto been used for the separation (dissociation) of components (i.e. S_kunequal to 1), but then a diaphragm was claimed here which has exactly the opposite purpose: namely, (i) the synthesis of ultrahighly (chemically and also physically) homogeneous alloys and mixtures and (ii) the deposition of ultrahigh-purity materials with maximum homogeneity of grain and phase distribution, purity being brought about by the associated distillation effect during the evaporation operation. Since no chemical separating operations take place in the gas or vapor phase, a different division of the (mono)atomic vapor mass from that of a vapor deposition process without the Diaphragm* occurs. However, herein lies the key to industrial synthesis in the vapor phase. The basic requirement placed on this Diaphragm* is to control sharp overall pressure and temperature gradients over its cross section by component-unspecific mass filtration, that is to say without material separation being carried out, unless expressly identified. Conventional material (and heat transmission) coefficients therefore play no (or only a subordinate) part in characterizing this new diaphragm species.

[0015] Since no chemical separating operations occur during transdiaphragm material conveyance, also no conventional osmosis, that is to say chemical potential gradients, can exert a controlling effect on material conveyance. It therefore goes without saying that the conveying operations are governed only by the variables, (under)pressure and temperature, and by a flow force which is imparted to the chamber system of the process as a whole from outside (that is to say, outside the conveying distance between the vapor source and vapor deposition) and which maintains and controls the underpressure system. “Osmotic pressure” transferred to the new vapor deposition process therefore occurs only in the case of a negative temperature gradient, toward which the vapor flow or gas flow must flow and for which the external pump system provides the propulsion force under the structural conditions of the Diaphragm* solutions. Since the suction flow conveying capacity Q for a given pumping speed S is controlled by the Diaphragm*, thermal convection is subordinatyed to forced mechanical convection as a control variable and is used merely for fine adjustment in the interdiaphragm chamber region. One of the possible means for implementing the process is the bifurcations (cf. the Second part of the invention) which are fitted in front of (screen mode) or in (depth filter mode) the Diaphragm* and which branch off controlled part flows from the evacuation flow in a turbulence- and/or condensation-minimizing, hence maintenance-friendly way and, return them into the original chamber for the purpose of reservoir formation. In this case, retentivity is expressed by the force of the Diaphragm*, said force being distinguished from the frictional force of a flow resistance which does not allow and/or control any high transdiaphragm state gradients without condensation.

[0016] In contrast to this, Sh. Tanaka, Japanese Patent JPA 02,125866, May 14, 1990, claims a throttle system, namely a type of flow resistance, which is to assist assist in controlling a pressure flow which equalizes the density of the vapor trajectories and which is generated by the relatively high saturation vapor pressures of the relatively highly volatile metals Mg and Zn. The specific advantage of the Japanese patent consequently remains restricted to a plant structural part without great diversification depth and therefore to the vapor deposition of alloy systems of the Mg—Zn (and also Mg—Li) type which, for example, play or will play no primary part in corrosion-resistant Mg alloys. Since the vapor pressure curve of Mg and Zn (or Li) are relatively similar, no plant structural parts of fundamentally differing function are required for controlling the resulting elementary pressure vapors. The Japanese patent therefore also permits no process control by the utilization of a productivity and quality increasing vapor suction flow which becomes necessary particularly when components having widely differing and/or low vapor pressures are to be evaporated and deposited. A further disadvanatge of the Japanese patent is that conventional flow resistances of whatever type convert directional flow into turbulences and may make it very difficult to achieve controlled vapor deposition for the manufacture of products.

[0017] It is unnecessary, at this juncture, to deal with the situation, widely discussed in the literature, where, without further control of the vapor trajectories, the (physical) vapor depostition rate decreases in thickness from the center of the deposited material toward its sides, depending on the process conditions adopted. It goes without saying that, in the suction flow-driven vapor deposition process, the Diaphragm* provides an outstanding solution for controlling this geometrical inhomogeneity problem. The depth of innovation of the Patent JP-A 02-125866 is therefore very limited. For what is forgotten in most cases is that the absolute thickness t_Rof the deposited material decreases with an increasing distance s_DRfrom the vapor source. This connection follows the relation (cf. D. S. Rickerby and A. Matthews, Advanced Surface Coatings—A Handbook of Surface Engineerings, Blackie & Son Ltd, Glasgow G64 2NZ, 1991):

[0018] t_R=k(s_DR)⁻ⁿ

[0019] in which the coefficient k is determinded primarily by the evaporation rate of the material or materials involved and the exponent n is determined by the remaining conditions of the vapor deposition process. Any form of controlled, hence serious “upscalings” of the (industrial) production of materials from the vapor phase therefore cannot avoid causing the coefficient n to tend as far as possible toward zero or (for k values<1) toward negative values and k (for n=0) to become as high as possible. Thus, as the result of a temperature rise from 2200 to 2400 K, a rise in the deposition rate of yttrium by the factor 5.5 was observed, but, at a constant temperature of, for example 2400 K, the maximum deposition rate at the geometrical deposition center in the case of a distance of 50 cm from the vapor source was not even 10% more than that in the case of a distance of 10 cm (see R. Nimmagadda and R. F. Bunshah, J. Vac. Sci. Technology8 (6), 1971, pp. VM86-VM94). If only because of the long distances which the Diaphragm* allows for vapor conveyance, a control of the form of the deposited blank becomes possible, not just by controlling the vapor trajectories directly before deposition (cf. F. Hehmann, EP Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995).

[0020] The comparison of EP Application 94111991.9 with conventional CVD practise (cf. D. S. Rickerby and A. Matthews, Advanced Surface Coatings—A Handbook of Surface Engineerings, Blackie & Son Ltd, Glasgow G64 2NZ, 1991) is also pertinent: in the EP application, the Diaphragm* is the control medium (structural part) and the suction flow imparts the propulsion force (productivity) for the process, whilst, in conventional CVD and CVR practise, the composition of the reactands is the means for controlling the process, whereas the specific productivity of the CVD process is determined by the diffusion operations in the immediate vicinity of the reaction surface of the boundary layer or by the reaction operations on the respective surface and by its dimensions. In light of this comparison, the productivity claimed by EP Application 94111991.9, that is to say increased a result of the interaction of the suction flow with a porous diaphragm (Diaphragm*), brings about, particularly for a PVD process, an increase in the vapor conveying capacity over unlimited distances and, to that extent, allows a productivity increase in the deposition of the (mechanically) conveyed vapor which, in comparison with the conventional PVD processes, is dominated by (mechanically) directed vapor trajectories, but still does not provide any productivity increase in the specific evaporation conditions themselves.

[0021] The Diaphragm* is therefore dedicated to a new philosophy of controlled material conveyance. As a plant structural part, it is distinguished from all previous separating diaphragms, including porous and diffusion diaphragms, but also from the conventional flow resistance. It is associated with a suction flow, since material conveyance must remain undisturbed not only by chemical (that is to say, component) separating operations, but also by physical separating operations, such as in the case of a variation in the physical state (that is to say, condensation, sublimation) before controlled vapor deposition at the deposition level which consists of at least one deposition chamber and/or substrate.

[0022] Since, with magnesium, on account of its high vapor pressures p*, it is so easily possible, depending on the evaporation temperature T on the condensed surface, to produce large conveying quantities q_vfrom the resulting vapor phase and deposit solid parts, it is actually not surprising that the vapor deposition of magnesium and its alloys constitutes a potential starting point for a new direction of development in the processing metal, semiconductor and semimetal industry and in the further-processing ceramic industry. On the contrary, the fact that magnesium “lags behind” as a competitive material and experience accumulated in rapid solidification with Mg alloys must rather be seen as proof (of this starting point) (cf. F. Hehmann, EP Application 94111991.9 , Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995; F. Hehmann and H. Jones, Rapid Solidification of Magnesium Alloys: Recent Developments and Future Avenues, in ‘Rapid Solidification Technology’, eds. T. S. Sudarshan and T. S. Srivatsan, Technomic Publishing Co., Inc., Lancaster, Basle, 1993, pp. 441-487; G. Neite, K. Kubota, K. Higashi and F. Hehmann, Mg-Based Alloys, in “Structure and Properties of Nonferrous Alloys”, ed. K. H. Matucha, Vol. 8 of Encyclopedia “Materials Science and Technology”, eds. R. W. Cahn, P. Haasen and E. J. Kramer, VCH Weinheim, P.O. Box 10 11 61, D-6940 Weinheim, RFA, to be published in 1995.

[0023] Now, in relation to F. Hehmann, EP Application 94111991.9 , Aug. 1, 1994, and PCT ApplicationPCT/EP95/02882 of Jul. 19, 1995, further configurations, options and details of a controlled vapor deposition with the Diaphragm* as the main structural part for appropriate “upscaling” are developed and claimed and form the plant modules of a future vapor deposition factory with production conditions adaptable to the respective product requirements. With the increasing diversity of couplable plant modules, the diversity of the corresponding production lines, products and production possibilities increases.

[0024] The invention pertains to a process of diaphragm-controlled physical and chemical vapor conveyance and separation including distillation. The process is universally applicable for deposition or reaction or separation or distillation by using a vapor or gas as an intermediary phase. Condenser and diaphragm technology is applied under a controlled static and flow pressure on either side of the diaphragm, said pressure control being assisted, if required, by temperature control of devices to maintain a stationary operation. Deviations from stationary conditions are regulated. A pump system and additional devices are installed to trap losses of yield and to maintain a continuous operation. The expanded diaphragm technique is also used for flows driven locally by the vapor pressure of elements or mixed substances employed. Novel diaphragm functions and novel process configurations and operational levels allow to control the state of an uncondensed intermediary phase for improved quality, yield and productivity of said processes.

[0025] The process enables for novel large-scale operations including the manufacture of so-called “supermaterials”. The process achieves its advantages not (only) by extending the operative temperature and pressure range of the process, but primarily by convection imparted to the process including a type of mechanical osmosis. In the process, minimizing the global (that is to say, interdiaphragm and transdiaphragm) loss figure ζ and the resulting frictional forces F_Fand maximizing the product quality and the yield of the conveying suction flow controlled by a porous diaphragm and driven by a vacuum chamber system assume central importance. A condenser system adapted to the specific process conditions is an integral part of the invention. Said condenser system is characterized by a lateral speed, constant (continuous and discontinuous) over the entire vapor deposition surface and varying in a controlled manner, for constant, approximately constant, but at least controlled surface states (T, c, porosity and roughness as a result of the control of the distance h between the porous diaphragm and deposition surface and the resulting control of the thermal accomodation coefficient α_T). In the case of non-separation pulse transfer (including the use of an inert gas component), an external cyclone and/or an external vapor separator and/or gas scrubbers can optionally be used in addition to the external pump system following passage through the vapor separation chamber. When a carrier gas is used, the gas is recycled into the gas supply system and reused.

[0026] The nature, advantages and various additional features of the invention will appear more fully upon consideration of the illustrative embodiments to be described further below in connection with the accompanying drawings wherein:

[0027] FIG. 1 Process principle Q(X)≈S_reqof industrial vapor deposition with diaphragm-controlled (macroscopic) conveying capacity Q(x).

[0028] FIG. 2 Vapor deposition process controlled by a diaphragm Diaphragm* (PD) with 3 evaporation chambers mounted in series followed by a vapor deposition chamber with a movable substrate and (micro) rollers (22) and hammer and pressure rams (23) to work the deposit.

[0029] FIG. 3 Thermal accommodation coefficient α_Tas a function of the hyperdiaphragm distance h between the diaphragm before deposition and the deposition surface as well as the conveying capacity fraction α_Aas a function of h.

[0030] FIG. 4A Asymmetric one-sided bifurcation backflow duct with a bifurcation location in the intermediate piece l′₀of a Z-bend upstream of the diffuser outlet, bordered by a gradient material layer and/or cooling on the PD backside.

[0031] FIG. 4bLength ratios between the hyperdiaphragm distance h, flow duct diameter d_zand mean free path length in the case of a laminar transdiaphragm flow.

[0032] FIG. 4cMolecular transdiaphragm flow with frequent collisions of the (vaporous) elementary particles with the wall of the transdiaphragm flow duct.

[0033] FIG. 5 Diagram of a CVD process controlled by a Diaphragm*.

[0034] FIG. 6 Diaphragm* for controlling the activity or reactions on CVD surfaces by surface bombardment.

[0035] FIG. 7aDiaphragm* for the controlled shaping of the blank during vapor deposition.

[0036] FIG. 7bShortened transition from a uniform to an exponential distribution of the flow speed for flow duct outlets with opening angle δ ranging from 0°≦δ≦30°.

[0037] FIG. 8 Architectural freedoms for combining the evaporation and/or mixing and/or deposition chambers of a vapor deposition process being controlled by a diaphragm.

[0038] FIG. 9aEvaporation chambers arranged in parallel, the height of individual evaporation chambers being proportional to corresponding conveying flow controlled by the respective Diaphragm* followed by a mixing chamber.

[0039] FIG. 9bEvaporation chambers in the n-level being arranged (semi)circularly (i.e. in an arc) around the periphery of the mixing chamber, the height of the individual evaporation sources in the n-level being proportional to the corresponding saturation vapor pressure of the elements used.

[0040] FIG. 10 Details of a Diaphragm* according to EP Application 94111991.9. showing self-organizing vapor reservoir in the conventional evaporation chamber, with walls of which being heated by induction and/or resistance heating.

[0041] FIG. 11 Discontinuous temperature intervals ΔT=T_max−T_minof reciprocally moved flat-plate condenser where T_max=temperature during vapor deposition and T_trans=temperature during transformation of respective metastable phase and δΔT(x)=temperature irregularity inherent to this process and Δt=relative time interval for ΔT(x) to occur.

[0042] FIG. 12 Vapor deposition and separation process involving deposition level with intermediate chamber being separated from the lower part of the vacuum chamber by a separating segment to prevent the outflow of fine nondeposited vapor dusts into a chamber in which the blank is compacted and and showing also fan/pump system and vacuum pump set, vapor separator, filter, cyclone, gas purifier (gas scrubber), various valves, powder containers and flame trap.

[0043] FIG. 13aCompact designs for a Diaphragm* controlled vapor deposition process involving (top) Collani-like pear-shaped and trapezoidal chambers for evaporation and evaporator tower and flow elements for the reduction of flow vortices, and (bottom) a top view of the evaporator tower with outer shaft and inner shaft e.g. to supply melt via a tube system.

[0044] FIG. 13bLaval nozzle-like mixing chamber and quasi-parallel arrangement of the evaporation levels n and n+2 with vapor guide plates for hydrodynamic pressure control fine-adjusting the arrangement of the main levels in the fluidic hierarchy of the vapor deposition process.

[0045] FIG. 14 Diaphragm* controlled vapor deposition process with circular process showing a)-d) side view of the transition from the evaporation and/or mixing region into the deposition level via at least two vapor outlets and deposition chambers in the deposition level for a continuous batch mode with in-series deposition and consolidation chambers and vapor shaft, as seen from the deposition level, and g) deposition level, as seen from the mixing chamber,with at least two oppositely arranged separate deposition chambers being located at the mixing chamber outlet and connected to a central cooling system.

[0046] FIG. 15aVapor deposition process operated by a single condenser in the form of a cooled disk in the vacuum chamber for relatively small pilot plants.

[0047] FIG. 15bAs for FIG. 15a, here qualitative pressure difference as a result of separating segments between the intermediate chamber and the vacuum chamber for the blank.

[0048] FIG. 16 Principle of the “melt-overflow” process to explain propulsion force for the productivity of the vapor deposition process controlled by a Diaphragm*.

[0049] FIG. 17 Principle of the increase in efficiency of the cooling capacity of a given condenser surface in the case of a given cooling system with a given cooling medium.

[0050] FIG. 18 Loss figures due to friction in the nonbent flow duct, λ, with (top) homogeneous and (bottom) heterogeneous surface roughness Δ as a function of the Re number.

[0051] FIG. 19 Theoretical Stanton number St=Nu/(Re*Pr) of a gas as a function of Re number and Mach number as derived from the locally effective heat transfer coefficient h.

[0052] FIG. 20 Free and forced convection in vertical tubes.

[0053] FIG. 21 Diagrammatic representation of heat transfer (Nu, where Nu=Nusselt number) and heat transfer efficiency (Nu/S, S=pump speed of pump system) in a Diaphragm* for the control of a vapor deposition process.

[0054] FIG. 22 Diagrams of the cross section of two plasma guns with (top) a diffuser outlet and (bottom) a Laval nozzle outlet for the resulting ultrasonic plasma jet.

[0055] FIG. 22-1 Development of the transdiaphragm speed profile of a free flow jet as a result of a pressure drop in a diffuser.

[0056] FIG. 23 Flow ducts with heating ribs of heat exchanger.

[0057] FIG. 24 Arbitrary cross-sectional forms/geometries of the heat exchangers and heat exchanger grids for Diaphragms*.

[0058] FIG. 25 Nonhomogeneous and asymmetric profile of transverse speed distribution in the flow bend for Diaphragms*.

[0059] FIG. 26 Guide blades in the flow bend for Diaphragms*.

[0060] FIG. 27 Thin guide blades in the bend for Diaphragms*.

[0061] FIG. 28 Methods to reduce loss figure ζ of a transdiaphragm flow duct widening independent of the diffuser opening angle α.

[0062] FIG. 29 Breakaway of the flow lines from the boundary layer of a diffuser and formation of turbulence.

[0063] FIG. 30 Flattened diffusers with outer walls nonsymmetric (to the diffuser axis), following a centrifugal ventilator with a constant (out) flow duct width b₀of arbitrary dimensions.

[0064] FIG. 31 Annular diffusers with axial and both axial and radial outflow of arbitrary dimensions.

[0065] FIG. 32 “Diffuser staircase” with number n_Diff.(Opt) of a flow duct of arbitrary dimensions.

[0066] FIG. 33 Internested diffuser cones with heat exchangers (fine lines) of arbitrary dimensions.

[0067] FIG. 34 Duplication of a flow duct by continuous flow duct widening, including widening of the flow cross sections within the radiators of the transduct heat exchangers (fine lines, cf. star).

[0068] FIG. 35 Flow duct with bent duct segments, the bend orientation of which oscillates in the x/z-translation plane and, at the same time, has a continuous widening of the flow duct and terminates in a Laval nozzle outlet.

[0069] FIG. 36 As FIG. 35, here with a Laval nozzle inlet and outlet and two different length ratios between the transdiaphragm flow duct (here with δ=0°) and Laval nozzles, i.e. l_wid/l_nar.

[0070] FIG. 37 Arbitrary sectional plane E in a cone, touching two spheres, inscribed in the cone and resulting ellipse within the cone for flow in a spiral passing through the cone.

[0071] FIG. 38aFlow spiral with a worm-like propagation direction transdiaphragm and 5 full roundings of an elliptic flow duct cross section in the horizontal and, optionally, a centered flow inlet (detail at top right).

[0072] FIG. 38bAs FIG. 38a, here with branches (bifurcations) for additional transdiaphragm flow ducts.

[0073] FIG. 38cPorous diaphragm with symmetrically arranged flow ducts according to FIG. 38a.

[0074] FIG. 39 Various cone widening with two of the possible resulting transdiaphragm (duct) volumes through which a flow spiral passes eg. in the form of a worm.

[0075] FIG. 39/continued e) Here, a transition from a round to an angular outer cone (including an vase-shaped volume) through which the transdiaphragm flow duct passes.

[0076] FIG. 40 Flow duct cross section geometries with Lemniscate and Cassini curves in g4).

[0077] FIG. 40/first continuation of g4), here cross sections and segments according to mathematical functions.

[0078] FIG. 40/second continuation of g4), here relating to the arbitrariness of flow duct cross section geometries.

[0079] FIG. 41 Forms of movement of the transdiaphragm flow ducts in the flow cone.

[0080] FIG. 41/continued, with perspective representation of a flow duct spiral and a meander-like flow duct.

[0081] FIG. 42 Multiple flow cones for a superheated flow duct passing through each individual cone with different outflow heights, outflow angles, outflow orifice dimensions and outflow orifice forms.

[0082] FIG. 43 Development of the profile of the flow speed in a flow duct.

[0083] FIG. 44 Stabilized speed distribution over the transverse cross section of a cylindrical flow duct with (1) laminar and (2) molecular flow of a compressible gas.

[0084] FIG. 44-1 Possibilities for manipulating the fluidic loss figure ζ of a noncondensing gas jet in front of an unmoved surface.

[0085] FIG. 45 Diagrammatic Diaphragm* for deriving the state equation for the transdiaphragm branching-off of a part flow quantity via bifurcations.

[0086] FIG. 46 Diagram of (a-c) the combining and c) the branching-off of a flow.

[0087] FIG. 47 Flow spectra at a bifurcation for the branching-off of a part flow quantity.

[0088] FIG. 48 Loss figures ζ_P,Band ζ_P,Das a function of the flow speed ratio v_B/v_iand v_D/v_ifor the branching-off of a part flow quantity via bifurcations at different angles.

[0089] FIG. 49 Loss figures ζ_widand ζ_Ffor a), b) conical and c), d) rectangular diffusers and for e), f), g), h) flattened diffusers.

[0090] FIG. 50 Rounded bifurcation edges and/or bifurcation duct inlets and the resulting loss figures for e) the bifurcation duct and f) for the evacuation duct as a function of corresponding conveying quantity ratio.

[0091] FIG. 51 Comparison of the effect of rounded bifurcation edges and bifurcation duct branches on the loss figure ζ_P,Bfor three angles α′_B.

[0092] FIG. 52 Symmetrical dovetail with rectangular flow duct cross section.

[0093] FIG. 53 a) V-shaped, b) T-shaped and c) multiple bifurcation with → combining and ← separation of the flows.

[0094] FIG. 54 Flow profiles before the entry of the flow into a bifurcation with b), c) suction flow mode as a result of the shadings shown in a) and d) pressure flow mode.

[0095] FIG. 55 Nozzle and backflow duct variations for combination with bifurcations used in the vapor deposition process with a) Laval nozzle, b) ultrasonic nozzle, c), d) preferred bifurcation type and e) to i) front views of the inflow sides.

[0096] FIG. 56 Effect of the rounding of a flow duct edge on the development of flow vortices (turbulences) for δ₁=δ₂, Re₁=Re₂, d₀(1)=d₀(2), v₁=v₂.

[0097] FIG. 57 Combination of three diffusers with two a) ultrasonic and b) Laval nozzles as transdiaphragm flow duct variants.

[0098] FIG. 58 As FIG. 57, here combined with bifurcations, and an indication of a transdiaphragm flow region driven by pressure flow (D) and by suction flow (S).

[0099] FIG. 59 Vertical section through a screen-like external bifurcation funnel upstream of a Diaphragm*.

[0100] FIG. 60 Alternative “external” bifurcation.

[0101] FIG. 61 External Laval nozzle a) with interception device and excess heating for bifurcation-induced condensation products on a Diaphragm* and b) external Laval nozzles with following “internal”, i.e. transdiaphragm bifurcations.

[0102] FIG. 62 Transition diffuser/nozzle bifurcation.

[0103] FIG. 63 Alternative bifurcation bringing about a nozzle-like contraction in cross section.

[0104] FIG. 64 Bifurcations in the bifurcation backflow duct.

[0105] FIG. 65 Four-part Diaphragm* element with α_diff=90° and alternative flow inlets and outlets.

[0106] FIG. 66 As FIG. 65, here with heat exchangers arranged in a diffuser-like manner in the diffuser region to contribute to suppression of the development of flow vortices.

[0107] FIG. 67 As FIGS. 65 and 66, here with 5 four-part elements mounted in series.

[0108] FIG. 68 As FIG. 67, here with three lined-up four-part lines of a Diaphragm* and a non-communicating transdiaphragm flow ducts.

[0109] FIG. 69 As FIG. 68, here with 3 communicating 4-part lines of a Diaphragm*.

[0110] FIG. 70 Variation in the profiles for speed and pressure of a bend flow in bend region and in bend outlet.

[0111] FIG. 71 Flow behavior with flow lines and flow vortices in a rectangular bend.

[0112] FIG. 72 Occurrence of flow vortices at constant Re number and (top) decreasing mean bend radius and (bottom) varying bend diameters.

[0113] FIG. 73 Wall variations of a bend and effect on the relation between the loss figure in the bend and the relative radius r/b₀of the bend.

[0114] FIG. 74 Concentric and right angled bends for δ=90° and a) 0.5<R₀/D_H≦1.5, b) R₀/D_H>1.5 and c) R₀/D_H>>1.5 FIG. 74/continued, abrupt bend (r/D_H=0) with a reduction or enlargement of the flow cross section, e) as d), but without a variation in cross section, but with a round wall or recess, f) rounded bend of rectangular cross section with a reduced or enlarged flow exit cross section, and g) as f), but without a variation in cross section, but with a round wall.

[0115] FIG. 75 90° Bend with a) rounded inner and a tapering outer wall and rectangular flow cross section and b) as a), but the inner wall in strip design.

[0116] FIG. 75/first continuation Bend in the strip design at various mounting/butting angles, as indicated and with a varying number of intermediate pieces having n_ST=1 to 3.

[0117] FIG. 75/second continuation Bend with k) kink on the inner wall, l) wavy parallel wall and m) as l), but a corresponding double bend with an intermediate piece of length l₀and n) as l), but without intermediate piece.

[0118] FIG. 76 Basic solutions for bifurcations on the flow bend.

[0119] FIG. 77 Diagrams of controlled arrangements of transdiaphragm flow bends in the Diaphragm* and resulting angle scenarios.

[0120] FIG. 77/continued d) Flow duct with angles δ₁=δ₂, e) asymmetric trans-diaphragm flow duct, f) asymmetric central and bifurcation ducts and g) Diaphragm* for δ₁=β_D,1=90°.

[0121] FIG. 78 With a)-c) small β_D-angles with relatively long bifurcation backflow ducts and/or very small d_B-diameters, d) to f) diagrammatically transdiaphragm flow ducts with bifurcations result from γ<180° and reduced angle sums/Σ</.

[0122] FIG. 79 Secondary vortex in flow bend at a) longitudinal section, b) transverse section in rectangular duct cross section and c) transverse section in circular duct cross section.

[0123] FIG. 80 Flow spectrum in π-bend with a) l₀/d_K=approx. 0, b) l₀/d_K=4.5 and c) l₀/d_K=1 where l₀=intermediate piece of the two associated individual bends of diameter d_K.

[0124] FIG. 81 Z-bend with flow spectrum (top), l′₀/d_K=1.5 (middle), both variants with δ=90°, i.e. δ₁=δ₂=90° and with (bottom) δ₁=δ₂=30.

[0125] FIG. 82 Double bend with δ₁=δ₂=90° in two different planes with δ(2)=90° and l′₀/d_K=1, where l′₀=intermediate piece of the corresponding individual bends.

[0126] FIG. 83 Double bend, as in FIG. 74, here U-shape with intermediate piece l₀, δ₁=δ₂=90° and R₀/D_H≧0.5.

[0127] FIG. 84 As FIG. 83, but in ∫-shape with a) in one and b) in two flow planes, here δ₁=δ₂=90° and δ(2)=90° after passage through the intermediate piece of length l₀.

[0128] FIG. 85 U-bend designed with sinusoidal periodicity as a result of oppositely (i.e. +δ/−δ) oscillating bend angles after passage through the intermediate piece of length l₀.

[0129] FIG. 86 π-Bend with 2δ=180° with a) identical and b)-d) varying inlet and outlet flow cross sections A₀and A₁.

[0130] FIG. 87 As for FIG. 86, here U-bends but with b) identical flow cross section A₀and A₁.

[0131] FIG. 88 S-Bend in a) strip design with R₀/D_H=1 and without intermediate piece and b), c) wavy overall walls, all the walls being parallel.

[0132] FIG. 89 As FIG. 88, but in two flow planes.

[0133] FIG. 90 U-Bend in sinusoidal periodicity, as FIG. 85, but in a design according to FIGS. 88 and 89.

[0134] FIG. 91 Use of Z-bends for a thin-walled porous diaphragm as a result of a highly efficient bifurcation variant in the intermediate piece l′₀(cf. FIG. 4a).

[0135] FIG. 92 Diagrammatic representation of minimum β_D-angles ->0 without feedback of the corresponding suction effect as a result of a transdiaphragm flow duct spiral (bifurcation backflow ducts represented by broken lines).

[0136] FIG. 93 Semi-quantitative summary of ζ, resulting F_F,0values and the potential yield of resulting flow convergences for the buildup of F_D,0via bifurcations in π-shaped and Z-shaped double bends.

[0137] FIG. 94 Diagram of a symmetrical Diaphragm* with high bifurcation density as a result of mounting in series per transdiaphragm flow duct (cf. FIG. 77band e).

[0138] FIG. 95 As FIG. 94, here with a high bifurcation backflow duct density and consequently relatively high F_F,0values.

[0139] FIG. 96 Selective branching-off from the transdiaphragm vapor flow and bifurcation backflow duct for 2 transdiaphragm (central) ducts.

[0140] FIG. 97 Parallel-offset flow ducts: a) offset non-parallel to the diaphragm surface, b) offset parallel to the Diaphragm surface.

[0141] FIG. 98 Flow duct with symmetrical part a) and unsymmetrical part b).

[0142] FIG. 99 Labyrinthine flow path with S-bend in the center: only the S-bend has a symmetrical part.

[0143] 1. Process principle Q(x)≈S_req

[0144] FIG. 1 is taken as a basis for extending the process principle Q(x)≈S_reqof industrial vapor deposition with diaphragm-controlled (macroscopic) conveying capacity Q(x), where eg. x being the perpendicular to the surface of the Diaphragm* inflow side and /x/ eg. the shortest Diaphragm* cross section (here of width “D”). A given conveying capacity Q(x)=q(x)* ΔP=kT(dN/dt) (labelled with “C”) (with derivative: (dQ(x)/dx)=q(x) (δΔP/δx)+ΔP(δq(x)/δx)) and deposition capacity Q(A)=Q(x)*α_A*α_T(see “E”) is proportional to the pumping speed S=S_req[m³/sec] (see “F”) at the inlet of the vacuum pump station in the deposition chamber (eg. n+1). Q is eg. in [(m³/sec)*Pa]. Further notations: “A”: local pressure gradients in the flow duct (and flight distance “h” before deposition) at P_n′+1: the actual pressure on the deposition surface at the moment of deposition. “B”: macroscopic pressure gradient dP/dx. “G”: possible loss of material Q(B)=Q(x)*(1−α_A)*(1−α_T).

[0145] The suction flow-driven vapor deposition process is characterized by the conveying capacity Q(x) controlled by a porous diaphragm Diaphragm* (PD), Q(x) being either the volumetric or the mass flow conveying capacity, i.e. Q_v(x) or Q_m(x), according to:

[0146] Q_v(x)=q_v(x)*ΔP=(q_m(x)/ρ)* ΔP (in[m³*Pa/sec])  (2)

[0147] and

[0148] Q_m(x)=ρ*q_v(x)*ΔP=q_m(x)*ΔP (in[kg*Pa/sec])  (3)

[0149] q_v(x) and q_m(x) being the respective (volumetric and mass) conveying flows and ΔP being the pressure gradient, specifically, here, first the global pressure gradient between the vapor source at any point in (one of the evaporation chambers) of the evaporation level, here n, and the surface of the blank (in the case of an evaporation time t=0 of the substrate) during vapor deposition, and S_reqbeing the necessary pumping speed at the pump inlet for generating the vacuum p_n+1in the vapor deposition level (or chamber) n+1. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 developed the need for a communicating chamber system which is subject to Boyle's laws. For a given pressure p and for a given temperature T in the evaporation chamber n, i.e. for p(n)=const. and for T(n)=const., the conveying capacity Q(x) rises with a falling pressure p at the deposition level, in the simplest case at (n+1), i.e. p(n+1), and thus with with an underpressure or an increasing transmembrane (i.e., local) pressure gradient ΔP_t=dp/dx, i.e. $\begin{array}{cc}\left(\delta /\delta x\right)Q\left(x\right)=\left(\delta /\delta x\right)*\left(q\left(x\right)*\Delta P_t\right)& \left(4\right)\\ =q\left(x\right)*\mathrm{\delta \Delta }{P}_t/\delta x+\Delta P_t*\delta q\left(x\right)/\delta x& \left(5\right)\end{array}$

[0150] The vacuum of the vapor deposition chamber, which, for a given design, depends on the pumping speed of the corresponding given pump system, therefore forms the propulsion force for the process as a whole. In its most general form, i.e. for a pump station not identified in any more detail (i.e. irrespective of the types of vacuum pump used, their overall size, their modular principle (e.g. in parallel and/or in series), operating ranges or e.g. NPSHA characteristic value etc., the vacuum (or underpressure) actually established in the vapor deposition chamber is dependent on the pump speed S at the pump inlet, here according to

[0151] P_n+1=Q_p/S_req  (6),

[0152] with S_req=the pumping speed necessary for obtaining P_n+1and Q_p=pumping capacity (similar to Q(x)), that is to say it is unimportant here how Q_pcomes about. In view of the conditions

[0153] ΔP↑≈(P_n−P_n+1)↑≈ΔP_t↑≈P_n+1↓≈S_req↑  (7)

[0154] Q(x) (cf. above) is directly proportional to S_req, i.e. Q(x)≈S_req. Consequently, for S=const. (in case of constant porous diaphragm conditions), also ΔP=const. and Q(x)=fn(q(x)), i.e. the term on the left in equation (5), which is a function of the properties of the pump station, drops out for S=const. The effective conveying capacity Q(x) is then only a function of the term on the right in equation (4), that is to say for a given value S, Q(x) is a function of the PD design only. In other words: the Diaphragm* “uncouples” Q(x) from S (or S_req) (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995).

[0155] 2. Uncoupling Conditions I for Q(x) and S: Transdiaphragm Conveying Flow

[0156] The first two overriding technical functions and preconditions which the PD fulfills for the uncoupling of Q(x) and S are (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995):

[0157] 1. reservoir formation before transdiaphragm material conveyance, i.e. before flow inlet into the PD, and

[0158] 2. suppression of turbulent flow (vortices, (macroscopic) turbulences of the order of magnitude of the flow ducts, vortex streets etc.) after transdiaphragm material conveyance by transdiaphragm and hyperdiaphragm pulse control, specifically, in particular, directly before vapor deposition, i.e. after flow outlet from the last PD before the vapor deposition level.

[0159] Both technical functions are an integral part of the PD force, yet to be defined in more detail, i.e. F_D(see the second part of the invention), said force representing the functional difference between a porous diaphragm Diaphragm* and the frictional force of the conventional flow resistance, F_F, in the abovementioned process. Consequently, for the most efficient possible design of a plant, of which Q(x)=fn(S) is controlled by more than one PD (cf. FIG. 2) it is neceassary, where appropriate, to have two PD types which are basically different in terms of the individual PD modules 1.1-1.5 and 2.1 used (cf. next section and the Second part of the invention).

[0160] FIG. 2 shows a diagram of a vapor deposition process according to EP Application 94111991.9 which is driven by the vacuum generated by suction flow and is controlled by a porous diaphragm Diaphragm* (PD) and which is functionally independent of the gravitational acceleration vector q, here with 3 conventional evaporation chambers (or levels, eg. 19) n, n+1, n+2 mounted in series, which, if appropriate, are to be opened to the side and/or can be drawn off separately as a hood, here the chamber n+2 being equipped with heated baffle walls (21) for the intermixing of the alloy components, and followed by a vapor deposition chamber n+3 with a movable substrate (13) shaped into an elongate plate or band and cooled by a liquid, a so-called (if appropriate, reciprocal)“plank condenser”, a part of which being directly exposed to the vapor deposition controlled by a PD, whilst (micro) rollers (22) and (if appropriate, pneumatically moved) hammer and pressure rams (23) compressed the other part of the evaporated-on material outside the vapor deposition region (cf. FIG. 9a), and which is in contact with a pump system (18) which ensures a constant vacuum in the deposition chamber independently of the conveying flow. The reciprocal “plank” condenser is guided back, by means of its guide rollers (14) and pneumatically moved partitions (15), controlling the outlet slit, between the vapor deposition and the compression region via pneumatically movable displacement tubes guided through a corresponding hollow tube (16), at a rate such that the blank (12) grows by evaporation and/or deposition, the growth rate of the blank being monitored by a microsensor/microprocessor system, in order to keep constant and control by a partition (17) the altitude of the deposition level and the distance h between deposition level and the Diaphragm* controlling the vapor deposition, and, if appropriate, varied by means of a displacement wall controlled by a microsensor/microprocessor system and located in a flat hollow wall (25) (FIG. 9b). It will be noted that a conventional flow resistance or flow throttles, for example corresponding to the rock in rapids are not (suitable) means for producing the equidistant pressure profile, shown on the right, of this vapor deposition process, (without condensation). The resulting and preferred arrangement of the (alloying) elements is, for example, Mg and alkaline-earth elements in chamber “n”, here in crucibles (1)(3), aluminum and rare earths (RE) in chamber n+1 (in crucibles (4) to (5)), and transitional elements and specific metalloids, such as Si and B and also Be, in chamber n+2 (here, in crucible (6) as well as the corresponding junction terminals and/or separate side chambers (7) with eg. an electron-beam system and/or plasma-evaporated components, the latter melted and/or evaporated, eg. via an electron-beam tube, plasma, sputtering etc., and/or with resistance, i.e. so that the elements are combined with a similar evaporation pressure in an evaporation chamber and are arranged, with a rising saturation vapor pressure, in evaporation chambers at a decreasing distance in the direction of vapor deposition.

[0161] To function 1) The first five basic structural part solutions for reservoir formation are (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCTApplication PCT/EP95/02882 of Jul. 19, 1995):

[0162] 1.1 relatively low area ratios of the (integral) flow duct orifice cross sections to the integral flow resistance and face which, between these orifices, retains the global vapor flow from any other vapor shafts.

[0163] 1.2 bifurcations (and corresponding bifurcation backflow ducts) which branch off part of the flow from the transdiaphragm flow duct and return it via the bifurcation backflow ducts into the respective evaporation chamber, and, in this case, the bifurcations can branch off the vapor on one side or, in each position δx (e.g. at a particular level as a pair), opposite one another and, per transdiaphragm flow duct, can have, in various positions δx, individual and/or multiple bifurcations mounted in series, each of these solutions being capable of being designed in angular and, for lower loss figures ζ, rounded form and, where appropriate, being combined with a flow duct contraction for the purpose of local pulse reinforcement.

[0164] 1.3 geometrical (swirl and buildup) elements with high resistance coefficients c_Fbefore flow inlet.

[0165] 1.4 flow resistances mounted in series (i.e. in a row) per transdiaphragm flow duct with definite orifice-to-resistance area ratios per transdiaphragm resistance.

[0166] 1.5 heating and/or superheating of the PD, including the PD structural parts 1.1-1.4, preferably by the induction and/or resistance method, in relation to the temperature of the (elementary and/or mixed) vapor flow or vapor flows.

[0167] Structural-part solutions 1.1-1.5 are used for PDs for the separation and connection of a communicating vapor and vacuum chamber system with different physical states, the transdiaphragm material conveying capacity Q(x) of which is influenced both by Boyle's laws and by forced convection through a porous diaphragm as a result of the vacuum suction flow and include a type of mechanical osmosis, i.e. a forced convection flow toward negative (i.e. rising) T-gradients (see above). Structural part solutions 1.1-1.5 thus permit transdiaphragm state gradients which are state gradients p and T, differing per unit length x, which are preferably higher and/or orders of magnitude higher than those existing in the adjacent vapor (evaporation), mixing and/or vacuum/vapor deposition chambers. The transdiaphragm pressure gradients resulting from reservoir formation make it possible to generate a wide range of transdiaphragm flow pulses which tend themselves toward high positive transdiaphragm T-gradients and are part of the second overriding technical PD function.

[0168] 2.1 Local Conveying Flows q°=fn(dz) for n₀=const.

[0169] Function N°1 (i.e. reservoir formation) implemented by 1.1 to 1.5 already ensures the control of the effective volumetric and/or mass conveying flow, q_v(x) and q_m(x), and the corresponding resulting conveying capacities (for a given pumping speed S and for given transdiaphragm state gradients dp/dx and dT/dx). In the simple cylindrical flow duct, the volumetric flow having laminar flow (i.e. relatively high pressures, frequent intermolecular (laminar) collisions) amounts, according to Poiseuille, to

[0170] q_v,lam(x)°=π/128* p/n*(d_z)⁴/l k_lam*(d_z)⁴/l  (8)

[0171] with the mean flow pressure p (here)=(p_n+p_n+1)/2=p_n+ΔP_t/2, and with the (correspondingly mean) gas viscosity according to

[0172] η_gas=f*m*N/V*c*MFP=2F/πa²*(mkT/p)^{{fraction (1/2 )}}  (9)

[0173] which, in contrast to the viscosity of liquids, η^Liq, is independent of the pressure and rises with the temperature, in said equation f=0.499, c=the mean value of Maxwell's speed distribution and MFP=the mean free path length (see below), a=atom or molecule diameter and 1=flow duct length. In a simple cylindrical flow duct, the volumetric conveying flow having molecular flow (i.e. relatively low pressures, frequent collisions of the atoms or molecules with the flow duct wall) is, according to Knudsen,

[0174] q_v,mol(x)°=π/12*c* (d_z)³/l=k_mol*(d_z)³/l  (10)

[0175] and is consequently controlled by the mean (i.e. in all 3 directions of translation) molecular speed:

[0176] c=(3kT/m)^½=(3RT/M)^½  (11)

[0177] (n.b. in practice, being approximately only 1/3 of this theoretical value as a result of wall collisions). If α_molis the fraction of molecular flow and α_lamthe fraction of lamellar flow, and the relation

[0178] α_mol+αlam=1  (12)

[0179] is true, this results, from equation (4), for S=const., dp/dx=const. and dT/dx=const., in the:

[0180] 2.2 Diaphragm Conveying Flow for S=const, dp/dx=const. and dT/dx=const.

[0181] (δ/δx)Q(x)=ΔP_t*δq(x)/δx=ΔP_t*δ[n₀*q(x)°/δx]

[0182] and for n₀=const. (n₀being the number of transdiaphragm flow ducts) this yields the total differential:

[0183] (δ/δx)Q(x)=ΔP_t*n₀[α_lam*k_lam*[(4((d_z)³/l)*δd_z/δx−((d_z)⁴/l²)*δl/δx]+

[0184] (1α_lam)*k_mol*[(3(d_z)²/l)*δd_z/δx−((d_z)³/l²)*δl/δx]]  (13)

[0185] in which

[0186] k_lam=(π^{2.5 a2}p)/(256 f(mkT)^½)=(here) const.

[0187] since dp/dx=const. and dT/dx=const. and

[0188] k_mol=π/12(3kT/m)^½ i.e. a lengthening of the flow duct reduces the conveying capacity Q(x) relatively insignificantly, since, under the restrictive condition 1.1, in particular δdz/δx, dz allows high gradients δQ(x)/δx, a secondary flow with rising temperature and falling pressure, i.e., within the process as a whole, molecular flow tends to rise at a decreasing distance from the deposition level and the relative influence of a variation in the flow duct diameter, i.e. δd_z/δx vs. δl/δx, for PDs before deposition is reduced by an order of magnitude in relation to PDs between the evaporation and/or mixing chambers, so that, if appropriate, relatively short flow paths are preferred in PDs before deposition.

[0189] To 2) However, what is critical for the (PD before) deposition is not the length of the (corresponding) transdiaphragm flow ducts, but the pulse control of the (mono)atomic or possibly molecule-like vapors over a distance h after exit from the last Diaphragm* as far as the deposition level, in order to prevent a significant deflection from the direction of flow directly before deposition. This deflection occurs, for example, in the form of flow vortices after (vapor) exit from a flow resistance, specifically, in particular, for laminar flow (fractions) with their relatively slow boundary layer flow in the transdiaphragm flow duct. Flow vortices between the flow outlet and deposition plane prevent the undisturbed deposition of the vapor flow and lead to (directional) pulse loss and deflection of the vapors into the chamber (interior) and, where appropriate, into the pump system.

[0190] A second necessary precondition for the uncoupling of Q(x) and S is, therefore, pulse control over the flow exit, and this in turn presupposes transdiaphragm pulse control. Presupposing reservoir formation (see above), transdiaphragm pulse control is achieved, inter alia, by means of contractions of the flow duct cross section, although, constructed as a simple (e.g. ultrasonic) nozzle contractions in cross section reduce the suction effect for transdiaphragm material conveyance and therefore pulse control over the flow exit.

[0191] 2.3 Suppression of Turbulent Flow

[0192] The PD before deposition is therefore characterized at the flow outlet by (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995:

[0193] 2.1 geometrical elements with low resistance coefficients c_C, in order to ensure the conversion of turbulent flow into directional, i.e. nonturbulent flow (laminar at high pressures and molecular at low pressures).

[0194] 2.2 combinations of continuous contractions in cross section and (a continuous transition to) continuous widenings in cross section (in the manner of a trumpet or of a Laval nozzle), the length ratios being l_nar/l_wid>1 and l_nar/l_wid<1, but preferably l_nar/l_wid>1.

[0195] 2.3 bifurcations for the (trans) diaphragm branching of a part-flow quantity and, if appropriate, for converting lamellar into molecular transdiaphragm and/or hyperdiaphragm duct flow.

[0196] The uncoupling conditions 1. and 2. already distinguish the porous diaphragm Diaphragm* (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) fundamentally from a conventional flow resistance (cf. F. Hehmann, F. W. Hugo, F. Müller and M. Raschke, German Patent Application No. P 44063334, Mar. 1, 1994, made by Leybold Durferrit GmbH, Hanau; Sh. Tanaka, Japanese Patent JPA 02,125866, May 14, 1990), in which, after the passage of the vapor through the cross section of the flow resistance, the static pressure increases at the outlet at least locally, where appropriate also macroscopically. Next to the interface with separating diaphragms (i.e. the Diaphragm* as a new species of “synthesis diaphragm” does not make separation possible, but a synthesis of components hitherto often immiscible or immiscible in the appropriate homogeneity), the difference for the flow resistance is critical for the Diaphragm* as a main control structural part for controlling large-scale vapor deposition processes. In essence, by means of the Diaphragm* -controlled process, a pressure lowering, (microscopically and/or macroscopically) hydrostatic in terms of the pump system, is brought about before the Diaphragm*, that is to say after the passage of the vapors through the interface, without a change in concentration, i.e. vacuum-generated material conveyance which, in the case of a flow resistance behind which compression of the moved fluid occurs at least locally, is neither evident nor compulsory and which therefore also does not ensure pulse control.

[0197] 3. Recapitulation: Three Porous Diaphragm Forms for Material Synthesis

[0198] The pulse control operation, which at first seems contradictory for increasing the productivity of a vapor depositon process, by essentially passive, i.e. externally induced reservoir formation, is the basis for making (both physical and chemical) material production from the vapor phase, including vapor deposition processes, capable of being controlled in industrial and large-scale production. The Diaphragm* is a universal structural part for controlling elementary vapors and gases, chemically reacted (cf; reactands, above) and physically mixed (i.e. alloyed) gases and/or vapors with widely varying physically, chemical and kinetic properties. Thus, the vapors guided back via bifurcations of a Diaphragm* (see EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) on the one hand, allow widely differing state conditions p and T in the adjacent chambers, without very high FF values having to be generated, and, on the other hand, permit the controlled communication of at least two separate evaporation sources or at least one evaporation chamber and one deposition chamber and the accurate control of the concentration of a blank, workpiece or near-final contour structural part or of a structural part by alloying from the vapor phase even when extremely different state conditions prevail. The bifurcations are decisive for the discharge of controlled part-flow quantities of elementary or alloyed gases and/or vapors from an evaporation chamber (with at least one evaporation source) which can be emptied via a Diaphragm* only when supply of vapor from the source is terminated (by closing the PD or the source). Under these conditions, the following states ate established

[0199] P_n=P_n+1=P_n+2=P_n+3  (14)

[0200] and (after the cutoff of the energy supply to the vapor sources and chamber walls, for example in the standard induction and/or resistance mode):

[0201] T_n=T_n+1=T_n+2=T_n+3  (15)

[0202] in which n, n+1, etc. are the levels which communicate with one another successively,i.e. in series, via the Diaphragms* and which each have at least one separate evaporation source and/or mixing region (baffle wall) (see FIG. 2) and, here, “n+3” is the level of the at least one deposition chamber.

[0203] In the special case of the manufacture of light metal alloy with the relatively highly volatile component, magnesium (or aluminium), as a base and with relatively low-volatile (main) alloying constituents (in the case of magnesium, virtually all appropriate elements, in the case of aluminium primarily transition metals and, in the case of a titanium-based alloy, magnesium would be the alloying constituent and the size ratios of the corresponding evaporation units would be correspondingly interchanged), the following functions, implemented in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995, of the suction flow and as well as Diaphragms two basic Diaphragm* designs (cf. FIG. 10) are obtained.

[0204] FIG. 10 shows a detail of a porous diaphragm Diaphragm* : H (diaphragm element, cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) with A=(here inductively) heated evaporation source with orifice B at any position in conventional evaporation chamber with heated wall I, C=filigree grid for generating turbulences of the order of magnitude of the flow duct D and the Laval nozzle-like outflow F, bifurcation backflow duct E and streamline elements G for minimizing turbulences at the flow L, thus contrasting decisively with the trivial flow duct having a rectilinear and/or concentric shape. It may be noted that the length dimensions of the illustrations in the xyztranslation space are selected arbitrarily. In the operating state, the (macroscopic) evacuation flow corresponds to the conveying flow J supplied by the at least one evaporation source A, whilst the bifurcation backflow forms, via the flow K, a quasi-infinite circular flow as part of the self-organizing vapor reservoir in the conventional evaporation chamber with the wall I. o o o: symbol for induction and/or resistance heating, as in the previous figures.

[0205] 3.1 Diaphragm* Type 1 between Evaporation Levels, e.g. n and n+1

[0206] 1.1 Primary role of the pressure drop across the perpendicular to the cross section (i.e. in the x-translation of the surface perpendicular, cf. EP Application 94111991.9) of the Diaphragm*:

[0207] heating and expansion of the relatively volatile component or components

[0208] 1.2 Primary role of the suction flow:

[0209] provision of the propulsion force for overcoming a negative temperature gradient (i.e. rise of the vapor temperature with decreasing distance from the deposition level): the ΔP-driven suction flow must therefore guarantee the heating and expansion of the gases. This operation corresponds to reverse osmosis in the separating operations controlled via the chemical potential.

[0210] 1.3 Primary form of construction of the Diaphragm*/type 1:

[0211] heated flow ducts of all types, including diffusers, diffuser/nozzle transitions and bifurcations with backflow ducts (cf. FIGS. 36, 37 in EP-Application 94111991.9, Aug. 1, 1994, and PCTApplication PCT/EP95/02882 of Jul. 19, 1995).

[0212] 1.4 Primary function of the Diaphragm*:

[0213] formation of vapor reservoir and transdiaphragm material conveyance as a function of the speed-determining evaporation and mixing action in the evaporation and mixing chamber n+1. The Diaphragm*/type 1 varies the vapor quantity released into the chamber n+1, depending on the speed-determining process conditions prevailing there.

[0214] 1.5 Secondary function of the Diaphragm*:

[0215] suppression of turbulence at the Diaphragm* outlet in the evaporation level n+1.

[0216] In contrast to this, the following characteristics emerge for the:

[0217] 3.2 Diaphragm*-type 2 Between Evaporation and Deposition Levels, e.g. n+1 and n+2

[0218] 2.1 Primary role of the pressure drop across the perpendicular to the cross section of the Diaphragm*:

[0219] acceleration of the individual atoms leaving the chamber or (below critical fragmentation, e.g. for metastable growth, in the deposition level) of the atomic agglomerate (e.g. in the case of saturated vapors, the so-called “wet vapors”). This operation corresponds, here, to the simple, i.e. conventional osmosis operation, since the temperature gradient is approximately zero or positive). Conversion of uncontrolled flow (with turbulences) into controlled flow and flow pulse, transdiaphragm acceleration (in the case of collective, i.e. laminar movement of the (accelerated) atoms and/or molecules in the vapor or gas phase, associated with a transdiaphragm pressure drop, i.e. even before flow exit, and/or conversion into free molecular movement), e.g. by the use of transdiaphragm bifurcations.

[0220] 2.2 Primary role of the suction flow:

[0221] provision of the propulsion force for controlled deposition and/or, where appropriate, to overcome the force shocks, exerted (i) by the (translational or rotational) movement of a deposition surface (including deposition products formed thereon) and/or (ii) by the suction flow of the nondeposited atoms and/or components, on the atoms and/or components to be deposited and actually deposited. This aspect is taken into account particularly in the condenser and consolidation unit in the deposition chamber (see below; n.b. the protuberances in the deposition (CVD/CVR: reaction) level which are caused by shading effects (cf. T. Gaspar, L. E. Hadermann, Y. Sahai, W. A. T. Clark and J. V. Wood, Proc. Symp. J. Mat. Res. Soc. meeting, Boston, Mass., December 1985) in the case of solid lightweight materials must basically be leveled out by microrollers after a particular layer thickness, where, in some surface processes (e.g. “Thermal Barriers”) and some functional materials (e.g. fractal silicon), they are highly desirable (see below)).

[0222] 2.3 Primary structural parts of the Diaphragm*/type 2:

[0223] flow-shaping geometrical elements with c_Fvalues as low as possible at the flow outlet

[0224] trumpet (i.e. Laval nozzle)-like flow outlets (i.e. diffusers with a curved longitudinal section

[0225] any contractions and/or widenings of the flow duct cross section

[0226] bifurcations (see above).

[0227] 2.4 Primary function (of the corresponding structural parts) of the Diaphragm*:

[0228] transdiaphragm vapor acceleration

[0229] transdiaphragm vapor acceleration in the case of rising, constant and falling Re-number

[0230] conversion of turbulent flow (fractions) into directional (laminar and/or molecular) flow fractions (see also FIGS. 38 to 40 in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995.

[0231] suppression and/or control of (local) condensation.

[0232] control of high-component-unspecific deposition rates.

[0233] 2.5 Secondary function of the Diaphragm*:

[0234] ensuring a minimum mixing action for the uniform distribution of all the components at the plant level preceding the deposition level (e.g., in FIG. 1, the plant level is level “n”) by reservoir formation and convection.

[0235] 3.3 Combinations of 3.1 and 3.2

[0236] The main factors in the design of the Diaphragms* for a PVD production process for high-performance (HL) magnesium, HL aluminium, HL titanium, HL superalloys, etc. do accordingly sometimes vary widely. The major advantages of PVD technology are, for aluminium, the highest ever achieved strength (>800 MPa) and rigidity (>95 GPa) combinations in the case of ductility values of up to 10% and the highest resistances to corrosion and plastic high-temperature deformation, and the advantages of PVD technology for titanium and superalloys are, in particular, their purity and the resulting damage tolerance. Magnesium as a potential workhorse for the industrialization of VD technology makes the invention extremely attractive.

[0237] 4. PD and Plant Materials and Material Development Spiral

[0238] Like the linings of the vapor reservoir of the plant as a whole, the Diaphragm* elements are also heated preferably inductively or by the resistance method (cf. FIGS. 2, 9, 10). The PD and plant materials are partially exposed to very high temperatures (up to 3000° C.) and, where appropriate priate, to reactive and/or corrosive and/or chemically aggressive vapors and/or gases. Material selection therefore plays an important part. High-melting refractory metals (W, Ta, Nb, etc.), their alloys, steels, intermetallics (e.g. aluminides (FeAl)) and superalloys, either uncoated and/or as a core with a ceramic layer or with ceramic as uncoated or coated core, are used. Consideration as further core and (e.g. CVD and/or PVD) laminated materials is given to oxides (e.g. MgO, ZrO, CrO₂, BeO, Al₂O₃, SiO, TiO₂, yt-tria etc.) carbides (e.g. W_xC_y, (e.g. WC, W₂C), Ta_xC_y, (e.g. Ta₂C, TaC), SiC, VC, B₄C, Cr₃C₂, TiC, ZrC, NbC, V₂C, Cr₂₃C₆, Cr₇C₃, MO₂C, MoC, Mn₃C, Fe₃C, etc.), nitrides (e.g. BN, TiN, AlN, Si₃Ni₄), borides (e.g. CrB₂, TiB₂, Ni_xB_y), silicides, Be, graphite and/or C—C (i.e. carbon) composite materials, and commercial hard materials, such as “Syalon” (90% Si₃N₄), sintered corundum (99.7% Al₂O₃), commercial tungsten carbides (96% WC+3% Co), hardened Cr steel, stainless Cr-Ni steels, nitrated Fe-Al alloys and/or other nitrated steels and/or stainless steels (see above), Teflon with steel core and/or cveramic materials with a plurality of components, such as SiC_xN_y, Cu_1−xTa_xalloys, (nanocrystalline) oxides, as above, but also SrTiO₃, KNbO₃, TiCN, TiC-MgO composite materials, SiAlON and/or Cr-based and/or -containing, Nb-ba-sed and/or -containing and/or Ta-based and/or -containing, Ti-based and/or -containing, Zr-based and/or -containing and/or W-based alloys and/or corresponding intermetallic and/or alloys and/or related refractory materials are used, including, in particular, BN-, TiN- and/or W_xC_y(e.g. WC, W₂C) and/or Ta_xC_y(e.g. Ta₂C, TaC) -layers evaporated onto the linings and/or diaphragm parts by PVD and/or CVD methods. Also used are materials which are preferably suitable for high transdiaphragm T-gradients and high T-gradients within transdiaphragm boundary layers (e.g. between supporting material and flow duct surface). Gradient materials having at least one of the abovementioned materials are therefore used for the porous Diaphragm*. Exceptional dimensional tailorability of new materials and material structures, which can be achieved from the vapor phase, make it possible, by means of new developments for high-temperature materials, to achieve higher operating temperatures for the abovementioned vapor deposition process. This self-sustaining inherent material development spiral is not so compelling in any of the other so-called progressive material production processes (such as, for example, in mechanical alloying) and is a direct consequence of mechanical osmosis, i.e. of pump speed dependent vapor convection brought about even in the case of negative T-gradients, as a key to an increase in productivity, specifically, in this context, as a key to appropriate variants of the process itself. Thus, the abovementioned process can be employed for the accelerated conveyance of the materials occuring by reaction in the vapor phase and of the reactands required for them (see below).

[0239] 5.Uncoupling Conditions II for Q(x) and S: Isolated PD Back Surfaces Before the AO (subclass of the 2nd PD class)

[0240] For a condenser system with a given, i.e. limited cooling capacity for the discharge of the heat introduced into a blank and/or substrate or substrates from (i) polytropic vapor cooling, routed with positive T-gradients in the direction of a substrate, of the (individual) vapor atoms and molecules in the state adsorbed in the deposition surface and from (ii) isothermal transition of the adsorbed and cooled vapor into the solid state, the maximum recordable deposition rate or deposition capacity Q(A)max falls, with rising heat transfer by heat radiation ΔH_Radiationfrom the backside of the last PD, before deposition on the deposition surface (AO), according to: $\begin{array}{cc}\begin{array}{c}\Delta H_{\mathrm{conduction}}\left(\mathrm{const}.\right)=\Delta H_{Q\left(A\right)}+\Delta H_{\mathrm{Radiation}}\\ =\left[\Delta H_{\mathrm{cool},\mathrm{ad}}+\Delta H_{\mathrm{condensation}}\right]+\Delta H_{\mathrm{Radiation}}\end{array}& \left(15\right)\end{array}$

[0241] This consideration ignores the cooling of the vapor by radiation before adsorption on the deposition surface (AO) and also a potential heat transfer from PD to the deposition surface by heat conduction and/or diffusion in a first approximation. The requirement for optimized process efficiency and control by the uncoupling of Q(x) and Q(A) on one side and of S on the other side therefore results in the general requirement for maximized uncoupling of heat transfer by radiation from the at least one PD backside to the (at least one) AO. The condition for radiated PD radiation capacity, i.e.

[0242] ΔH_Radiation=ε_PDσAP_PD(T_PD−T_AO)⁴=ε_PDσAP_PD(ΔT_h)⁴  (16)

[0243] where:

[0244] ε_PD=emissivity=absorbency (0_(white)<<1_(black)) of the PD backside;

[0245] σ=Stefan-Boltzmann constant=5.669 *10⁻⁸W/m²K⁴;

[0246] A_PD=total PD area (on the backside vs. AO);

[0247] T_PD=PD temperature on the backside vs. AO;

[0248] T_AO=temperature on the AO;

[0249] yields, in the first place, the 3rd overriding technical function of the PD which fulfills the general requirement for as low ε_PDand A_PDabsolute values as possible, since=T_PD−T_AOis fixed by the product and process conditions. In fact, ΔH_Radiationis still reduced in the most efficient way by introducing an insulated and insulating, if appropriate cooled PD part surface A_coldat the temperature T_cold(between the unavoidable part surface of the flow outlets having a bordering tolerance surface A_hotat T_hot), since this reduces the exponential term in equation (16) according to:

[0250] ΔH_Radiation=σ*[ε_hotA_hotΔT_hot⁴+ε_coldA_coldΔT_cold⁴  (17)

[0251] (see FIG. 4a), in which A_PD=A_hot+A_cold, ΔT_hot=T_hot−T_AOand ΔT_cold=T_cold−T_AO, and the differential equation for low radiation PD design before deposition becomes:

[0252] δΔH_Radiation/δx=

[0253] σ*[δ²A_hot(δyδz)*ΔT_hot⁴*ε_hot+δ²A_cold(δyδz)*ΔT_cold⁴*ε_cold

[0254] +[δ²ΔT_cold⁴/(δyδz)*ε_cold*A_cold+δ²ε_cold/(δyδz)* A_cold*ΔT_cold⁴]  (18)

[0255] FIG. 4ashows a solution to reduce the radiation capacity of the “hottest” PD before vapor deposition, here an asymmetric one-sided bifurcation backflow duct with a bifurcation location in the intermediate piece 1′₀of a Z-bend upstream of the diffuser outlet, bordered by a gradient material layer and/or cooling (hatched area) on the PD backside (see SECOND PART of the invention).

[0256] 6. Uncoupling Conditions III for Q(x) and S:

[0257] The Δh_eff(F₀) Regime

[0258] As the fourth overriding technical function and precondition for the uncoupling of Q(x) and S,

[0259] 4. allowing for the fact that reservoir formation and the transdiaphragm pulse control also depending on this are limited for a given Q(x), the vapor flow, after exiting from the PD, must also actually reach the deposition surface of the (for t=0) substrate and/or blank and/or (consolidated) workpiece and, at the same time, overcome with as little disturbance as possible distance h between the PD exit orifice and the depositon surface (cf. FIG. 1), i.e. the degree of uncoupling of Q(x) and S depends, on the one hand, on the break in volume of the transdiaphragm vapor flow which reaches the deposition surface and, on the other hand, on the degree of pulse preservation or pulse loss of the hyperdiaphragm vapor flow over the distance h.

[0260] Since the process is governed by the premise of optimizing the conveying capacity (i.e. minimizing the loss figures ζ for a given conveying and/or mass flow and consequently maximizing the conveying and/or mass flow under given process (state) conditions), the pulse force balance over the hyperdiaphragm distance h is also dependent on the diameter d_z(cf. equation (13)) of the transdiaphragm (straight cylindrical, cf. above) flow duct, whilst the further control variables of the distance h_eff(lateral speed and surface conditions) are subordinate to the pulse control of the PD, that is to say, for abovementioned processes, h_effmust be defined as a function of d_zas long as the specific PD pulse control is undefined. Under given state conditions in the evaporation chamber (e.g. n) and in the vacuum deposition chamber (level, e.g. n+1, cf. FIG. 1), the operative control variables of the transdiaphragm flow state (i.e. p, r and v as well as the resulting nature of the turbulence-free flow, i.e. laminar or molecular) depend in the simplest case on the diameter of the straight cylindrical flow duct, dz.

[0261] FIG. 4bshows length ratios between the hyperdiaphragm distance h, flow duct diameter d_z(here, for example, at the diffuser outlet) and mean free path length MFP(PD) in the case of a laminar, viscous transdiaphragm flow (i.e. frequent intermolecular/interatomic layer collisions, collective particle movement with the exception of the boundary layer, speed gradient between the layers and transmission of the tangential force F_tg=h(dv/dz) by momentum transfer (cf. V_SR=velocity of substrate or condenser (with “C”=cooling system)), as occurs at high pressure. FIG. 4cshows molecular transdiaphragm flow with frequent collisions of the (vaporous) elementary particles with the wall of the transdiaphragm flow duct (as in FIG. 4b). Whilst for laminar flow h>>MFP, for molecular flow h=approx. MFP (MFP: mean free path length).

[0262] The condition for laminar flow (cf. FIG. 4b) is $\begin{array}{cc}\left(\frac{d_z}{2*\mathrm{MFP}}\right)⪢1& \left(19\right)\end{array}$

[0263] that for molecular flow (cf. FIG. 4c) $\begin{array}{cc}\left(\frac{d_z}{2*\mathrm{MFP}}\right)⪡1& \left(20\right)\end{array}$

[0264] and that for the transitional regime is accordingly $\begin{array}{cc}0.1</=\left(\frac{d_z}{2*\mathrm{MFP}}\right)</=10& \left(21\right)\end{array}$

[0265] in which MFP (cf. equation (8))

[0266] MFP=kT/(2^0.5πa²P)  (22)

[0267] with P=total pressure, a=atom or molecule diameter, T=temperature, here in the flow. It is evident from the relations (19) and (20) that (as orientation values) hmax (and therefore the control of the uncoupling of Q(x) and S_req) is a function of d_zin the case of a laminar flow, a function of the MFP of the vapor flow (see FIG. 4c) in the case of molecular flow and, in the case of a mixed flow state, the function of a dimensionless quantity which may vary by 2 orders of magnitude.

[0268] On the precondition that suitable geometric elements and/or flow duct exit orifices with low c_Fvalues (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) prevent flow vortices over the distance h (cf. uncoupling condition No. 2), the vapor jet is deflected laterally by the vacuum in the vapor deposition chamber and, if appropriate, competes with laterally acting pulse forces having y and/or z components, i.e. with force shocks caused by atoms and/or molecules which, where appropriate, are influenced and, where appropriate, reinforced by the movement of the substrate and/or blank and the corresponding surface quality as a result of tangential (i.e. laminar) pulse transfer. The higher the pressure in the vacuum chamber of the condensers and the shorter the distance h, the higher the lateral deflection force. On the other hand, the number of lateral force shocks decreases with increasing vacuum on account of the mean free path length which consequently increases (cf. FIG. 44-1 showing possibilities for manipulating the fluidic loss figure ζ of a noncondensing gas jet in front of an unmoved surface with (top) roundings on the diffuser outlet and (bottom) variations of the distance h; A=rounding; V_Out=outflow velocity).

[0269] To 3) For a given pressure in the vapor deposition level (e.g. P_n+1)

[0270] 3.1 the distance h between the PD exit orifice and the deposition surface therefore should not exceed a value h_max(α_A,crit), i.e.

[0271] h<h_max(α_A,crit)  (23)

[0272] in which h_max(α_A,crit) is a vertical distance from the PD backside which depends on the balance of the pulse forces over h (including the pulse force of the vapor flow F₀=dI₀/dt, cf. Second part of the invention) and of which the lateral force shocks) still allows a critical fraction α_A,critof the vapor flow to impinge on the deposition surface, and, under the condition (23), i.e. the condition α_A,eff>α_A,crit, h becoming h_effand consequently controlling the fraction of the vapor flow α_A,effwhich reaches the deposition surface (cf. FIG. 3).

[0273] 3.2 the difference Δh(F₀)=h_max(α_A,crit)−h_eff(F₀) determines the operative thermal accomodation coefficient α_T,, i.e.

[0274] α_T=(E_ν−E_r)/(E_ν−E)=(T_νT_r)/(T_ν−T)  (24)

[0275] in which:

[0276] E_ν=kinetic energy of the atom arriving on the substrate surface, said kinetic energy also depending on the conditions on the deposition surface (roughness, lateral speed v_kon, see PCT/EP95/02882 of Jul. 19, 1995),

[0277] E_r=energy of the desorbed atom before equilibrium with the lower layer is established,

[0278] E=energy of the desorbed atom after equilibrium with the lower layer is established,

[0279] since the effective pulse forces on the deposition surface and consequently the kinetic energy of that fraction of the vapor flow α_A,effwhich arrives at the deposition surface are dependent on Δh. The kinetic energy of the melt droplets is a calculated constituent of the energy balance of spray compacting (from the melt). In vapor deposition, the kinetic energy of a particle of the vapor or gas phase which impinges on the surface should not exceed a critical value. the corresponding balance is represented by the thermal accomodation coefficient. In the event of the reflection or rebound of an atom from the deposition surface, the following applies

[0280] α_T<1  (25)

[0281] FIG. 3 shows the thermal accommodation coefficient α_Tas a function of the hyperdiaphragm distance h between the porous diaphragm before deposition and the deposition surface as well as the conveying capacity fraction α_Aas a function of h. In the upper example, there is no Δh_effrange with α_T=α_A=1, since, for example, too high a lateral speed of the condensers and a relatively high pressure in the deposition chamber deflects part of the vapor jet before it reaches the deposition surface, but the rest has too high an impact speed, so that α_T<1. A reduction in the condenser speed may increase the fraction α_Ato 1.0 for the same distance h, but, due to the increased impact of the vapor flow, cannot bring about any improvement in the yield, since α_Tdecreases correspondingly (the example in the middle). Only adaption of transdiaphragm flow speed by the choice of the Diaphragm* or by the choice of the pressure gradient dP/dx, which likewise depends on the choice of the Diaphragm* , makes it possible to have a Δh_effrange with α_T=α_A=1 (example at the bottom). Under these circumstances, Q(x) and the lateral condenser speed can be increased until this Δh_effrange disappears again. In the example at the top, the lateral speed of the condensers continues to determine the rate for the deposition capacity Q(A).

[0282] The relative accomodation coefficient α_T+(α_A), i.e. the accomodation coefficient related to a given α_Avalue, falls with falling h_effvalues and with rising αh an α_Avalues and, for α_A=1, is directly proportional to heff. Consequently, should not fall below a value h_min(α_T,crit), at which there is a fall below a critical value α_T,crit(cf. FIG. 3), i.e.

[0283] h_min(α_T,crit)<h_eff(F₀)<h_max(α_A,crit)  (26)

[0284] Whilst, on the precondition (15), the distance h_eff(F₀) controls the fraction of the vapor flow α_Awhich reaches the deposition surface, the differential length Δh(F₀) determines the fraction α_T, adsorbed by the deposition surface, of that fraction of the vapor flow α_Awhich arrives at the deposition surface, and consequently the effective deposition fraction in the total conveying capacity Q(x). h_effis therefore dependent on the optimization of the ratio of the α_Avalues to the α_Tvalues as a function of the hyperdiaphragm distance h between the PD flow exit and the deposition surface. The ratio of the α_A(h) and α_T(h)functions to one another is dependent on the transdiaphragm state gradient, the force of the porous diaphragm Diaphragm* (see next chapter, i.e. the local manipulation of the pulse per flow duct), the lateral speed and the nature (roughness) and temperature of the deposition surface.

[0285] Optimization is carried out in such a way that, for as wide a range Δh_effas possible,

[0286] α_A(h)=α_T(h)=1

[0287] Under these conditions, sufficient preconditions are provided for complete, approximately complete, but at least controlled deposition of the volumetric flow, i.e. a controlled yield Q(A) of the volumetric vapor flow Q(x), under the conditions of the abovementioned vapor deposition process (principle), and therefore for controlled uncoupling between Q_v(x), on the one hand, and S_reqon the other hand. In a similar way to equation (4),

[0288] Q(A)=ΔP₁*q(x)*α_A*α_T  (27)

[0289] and the corresponding differential

[0290] (δ/δx′)*Q(A)=ΔP₁*q(x)* [(δα_A/δx′)*α_T+α_A*(δα_T/δx′)]  (28)

[0291] are obtained, δx′ being the transdiaphragm cross-section length δx plus the hyperdiaphragm distance h_eff(F₀) between the PD flow exit and the deposition surface, and therefore

[0292] Q(B)=Q(x)−Q(A)=ΔP₁*q(x)*(1−α_A)*(1-α_T)  (29)

[0293] is the non-deposited, otherwise utilized vapor conveying capacity (cf. description of FIG. 12.).

[0294] FIG. 12 shows in a) and c) a cross section of a vapor deposition chamber, as in FIGS. 2, 9a, 9bwith a)-c) reciprocally and/or (if appropriate, in the batch mode) unidirectionally moved “plank” condenser in the PD controlled vapor deposition process operated by suction flow, in a) the top part (31) with the height h and a lower part (34) of the vapor deposition chamber being without a partition (33) and therefore connected, whilst in c) the deposition level consists of two chambers, specifically the intermediate chamber (31) with the height h, the intermediate chamber (31) being separated in this case from the lower part of the vacuum chamber (34) by an (if appropriate, movably guided) separating segment (33) (and its extension height being controlled, where appropriate, by means of a microprocessor, in such a way that it brushes along the already compacted part of the deposited blank (12), if appropriate with a (rounded) scraper (35) cf. uncompacted blank layer (36), see |||||||||||) and at least significantly reduces and/or completely prevents the outflow of fine nondeposited vapor dusts into the lower part (34) and thereby provides two finely adjusted partial pressure regions in the deposition level, as well as the partitions (17: fixed or movable, 17b: fixed, 17c: movable, cf. FIGS. 2, 9a, 9b) which prevent the outflow of nondeposited vapors into that part of the deposition level/deposition chamber in which the blank is compacted (“in situ”), the two regions (31) and (34) of the vacuum chamber which are connected by means of a fan/pump system (39d) and/or vacuum pump set (if appropriate with a “Roots booster”, 38c), are optionally additionally connected to a vapor separator and/or filter (38b) and/or a system consisting of a cyclone (39a) and gas purifier (gas scrubber) (39b), if appropriate for the deposition of any residual vapors, 38boperating at temperatures of, where appropriate, >1000° C., 38d: various valves, 38c: and 39c: powder containers, the region (38) and (39) is protected, if appropriate, by a flame trap (37), and/or, in the case of the use of a carrier gas, this, after passing through the cyclone, is, where appropriate, returned to the system again via a pump system (39d); part b) shows a longitudinal section of the cooling substrate for deposition, with an (if appropriate, meander-like) cooling coil for the cooling liquid (flowing in the direction of the arrow), with 13a: connecting line between the substrate (13) and cooling assembly (13f), furthermore connected to a hose joint (13c), a lengthenable and shortenable (i.e. retractable and extendable) metal stretch hose (13b), inserted in a flange (13k) for supplying the substrates with the cooling liquid (13a), and a rotating distributor and collector dish (13d) for suppling the cooling liquid to a vapor deposition process operating in batch mode, the combination of 13a, 13b, 13cand 13dboth keeping the cooled condenser in a constant y position when it passes through the deposition chambers 21, 31 and 34 and swinging it into the y position and thereby executing, if appropriate, a meander-like motion, the y position, like the height h already, is controlled, monitored and, if appropriate, changed in the y direction (cf. FIG. 14) if appropriate by a microsensor-microprocessor (cf. connection 13h), the height of the cooling substrate (13) is adjustable by an (if appropriate doubly extendable) supporting tube (13i) in corresponding supporting struts (13j) and the cooling system is turned by a motor (13e), while (34b) represents a supporting strut and a hollow tube for guiding the condenser outside the vapor deposition chamber in the region of the in-situ consolidation chamber with a vacuum of the same order of magnitude as that in the deposition chamber.

[0295] It goes without saying that the distance h_effbetween the Diaphragm*, which separates the last evaporation level (e.g. n+2 in FIG. 2) or the a least one B₁unit from the surface of the deposited blank at the deposition level e.g. (n+3, in EP-Application 94111991.9, Aug. 1, 1994, and PCTApplication PCT/EP95/02882 of Jul. 19, 1995 n+2) or the at least one C_kunit (cf. FIGS. 2, 9, 11-15), should exceed the mean free path length (MFP) in the hydrostatic state of rest by an amount which is proportional to the amount by which the flow speed exceeds corresponding x-component of Maxwell's spectrum. By contrast, the primary overall and more relevant question is by what PD structural parts and PD design parameters can the PD control not only the nature of the flow state (laminar or molecular), but, above all, the (local) pulse in the flow duct, without reducing it. Only forms and elements of a Diaphragm* with loss figures (e.g. transdiaphragm bifurcations) reduced in relation to comparable flow resistances were claimed in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995. Further PD structural parts and PD structural part parameters are discussed in the SECOND PART of the invention together with the special advantages for the abovementioned process.

[0296] 8. CVD and CVR Diaphragms*

[0297] The Diaphragm makes it possible, in order to control the vapor flow directions, the macroscopic and local vapor speeds and process variables p, T, etc., to achieve further manipulations and optimizations of a suction flow driven by an external pump system, which are put forward and explained in the following SECOND PART of this patent specification. They afford a solution to the diversity of requirements in material production from the vapor phase, in this solution the production of alloyed workpieces and surfaces being only two of the potentially highly diverse examples of use. They cover borderline cases in the problems of vapor deposition, including those with locally very high flow speeds (cf. SECOND PART of the invention) along with very diverse plant volumes and vapor source and deposition surfaces. The Diaphragm* is therefore a universal structural part in small-scale and large-scale versions and is also used for increasing the productivity of CVD and CVR processes (CVD: chemical vapor deposition, CVR: chemival vapor reaction). Thus, it affords an advance particularly for CVD processes in which different surface reactions require a fine state control of the individual constituents of the overall reactand gas and/or of the overall reactand gas itself in the reactor space (FIG. 5).

[0298] FIG. 5 shows a diagram of a CVD process operated by vacuum, with a conveying flow Q_vcontrolled by a porous diaphragm Diaphragm* , here with Ex=exhaust, Sc=scrubber, Vc=vacuum pump, TPC=total pressure control, R=reactor, GMV=gas mixing vessel, FM=flow meter, GB=gas bottle, Ev=evaporator, Su=sublimator, G=generator, P=purge. Furthermore, the porous diaphragm Diaphragm* is used for controlled surface bombardement (FIG. 6). FIG. 6 shows a porous diaphragm Diaphragm* for controlling the activity and/or reactions on CVD surfaces by surface bombardment, produced by vacuum, with an angle of impact κ, relative to the suction effect of the reaction product flow, here with Re=reactants, r=reactor, c=coating, S=substrate and ReP=reaction product.

[0299] The main advantages of Diaphragm*-controlled interactive (intercommunicative) gas and vapor routing in indirect and/or direct proximity to the reactive zone include:

[0300] 1. flexibility with regard to the operative temperature gradients over the cross section of the Diaphragm* and, to that extent, as regards composition of the vapor mixtures to be generated (i.e. a positive, a negative and a “zero” T-gradient is possible).

[0301] 2. flexibility with regard to control of the transdiaphragm pressure drop between two chambers (very small and very large pressure drops are possible).

[0302] 3. dependence of the conveying flow (or vapor mass flow, i.e. the material conveyance of all components), not vice versa, and therefore high flexibility in the operative productivity and product selection of a given plant type (cf. FIG. 5).

[0303] 4. flexibility with regard to vapor/gas conveying and/or mass flow allowed through a Diaphragm* at a given pumping speed S.

[0304] 5. flexibility in the transdiaphragm heating of the gases/vapors per flow duct.

[0305] 6. flexibility with regard to transdiaphram flow speeds and acceleration.

[0306] 7. flexibility in transdiaphragm gas/vapor flow routing (e.g. via a system of “ramified” flow ducts) for controlled shaping at the outlet of the last Diaphragm* before deposition, in conjunction with flow shapers having very low resistance coefficients c_W(c_F) at the outlet of the flow ducts (cf. EP-Application94111991.9, Aug. 1, 1994, and PCTApplication PCT/EP95/02882 of Jul. 19, 1995 and FIG. 7), consequently high flexibility in the control of (i) the shape and size of the vapor deposited as a blank and/or semifinished product (cf. FIG. 7a) and of (ii) the resulting local speed and pulse control shortly before deposition.

[0307] 8. flexibility in the control of undesirable condensation on the in conjunction with 1.-7.

[0308] FIG. 7ashows variants of the porous diaphragm Diaphragm* before deposition for the controlled shaping of the blank during vapor deposition, including controlled deviations from a uniform blank thickness, here as a function of a) the bend of the porous diaphragm backside in the case of a constant outflow duct density, b) the outflow duct bend and c) the density of the outflow ducts on the porous diaphragm backside. FIG. 7billustrates a controlled blank and/or layer and/or film formation by means of a porous diaphragm Diaphragm* before deposition, here a shortened transition from a uniform (PIE) to an exponential distribution (RE) of the flow speed by the use of trumpet-like (i.e. diffuser-like) shaped flow duct outlets. A suitable choice of the opening angle δ in the range of 0°≦δ≦30°, preferably 0°≦δ≦15°, results, in the abovementioned process, in a significant shortening of the flow duct for the purpose of stabilizing the profile of the flow speed, allowing control of the accommodation coefficient α_T(α_A) and consequently a controlled deposition capacity Q(A). DC=continuous diffuser (α=8° to 10°). FIG. 22-1 shows the development of the transdiaphragm speed profile of a free flow jet as a result of a pressure drop in a diffuser with PP=main part, NE=core and CL=layer limit.

[0309] The suction flow upstream of the deposition (CVD/CVR:reaction) level is, in the process as a whole, the critical suction flow in terms of the productivity and quality of the product to be produced. Its conveying quantity is dependent on the evaporation (and, if appropriate, the alloying) behaviour of the a) low (very low)-volatility (or high-temperature (HT)) component or components (whether unalloyed or in conjunction with more highly volatile components and/or mixed alloy systems) and b) the reproducibility of the concentration, the (chemical) homogeneity of the concentration, the phase formation (stable or metastable, including the degree of deviation from the thermodynamic equilibrium, since a plurality of metastable phases are often possible for a given concentration, particularly in the case of higher alloy contents), the resulting (physical) homogeneity of the resulting phases (identical initial concentration), the grain size and grain size distribution, the degree of porosity and the distribution of porosity before and, if appropriate, after microcompacting (microconsolidation, e.g. by microrollers, microhammers, etc.), and the dimensions (e.g. wall thickness) of the blank and/or workpiece. Since the suction flow through the porous diaphragm Diaphragm* is controlled, these quality features are also controlled by the porous diaphragm. This is new.

[0310] The Diaphragm* allows novel flow routings and flow ratios for improving flow dynamics in the CVD/CVR reactor space (cf. FIG. 5) and consequently a) an extension of the (T-/p-)existence range of the CVD-processes controlled by surface kinetics in comparison with competitive mechanism (homogeneous reaction in the gas phase, conveyance to and beyond the speed- (v), concentration- (c) and/or temperature -boundary layers) and b) coupling between process parameters and the material-specific parameters which are the decisive factors in operations controlled by surface kinetics, so that improved control of surface-kinetically controlled CVD/CVR processes at a high productivity level (e.g. cf. “low-pressure” CVD) is achieved.

[0311] By contrast, the increase in the production rate of conventional CVD processes is usually at the expense of an increase in the turbulent flow upstream of the reaction front, which may greatly increase the costs of the CVD process (e.g. on account of ineffective utilization of the reactand). The structural parts with high c_Fvalues at a mean distance from the flow inlet of the Diaphragm* (including baffle walls, cf. FIGS. 2, 9a, 9band 10 and the low c_Fvalues directly at the outlet, cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) result in a) more effective in situ intermixing of individual reactand and carrier gases and b) reduced turbulences and/or controlled transition from turbulent to directional (laminar and/or molecular flow with minimized loss figures ζ, cf. FIG. 7b), and as a consequence:

[0312] 1. Purely directional laminar and/or molecular reactand flow directly in front of the respective boundary layers and, where appropriate (cf. points 3. and 4.), directly at the reaction zone or reaction front, thus resulting in a reduction in the operating costs along with uniform product quality.

[0313] 2. Increased production rates without additional and/or excessive turbulences (along with uniform product quality). When a plurality of reactands are used, the necessary mixing operations are brought very close to the reaction front by means of a Diaphragm*, without the surface bombardement being impaired. Together with its heatability to very high temperatures (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT/Application PCT/EP95/02882 of Jul. 19, 1995), the Diaphragm* therefore improves the nucleation and/or quality control of a CVD and/or CVR process and, for the individual product unit, allows in particular:

[0314] 3. Improved T-control of the reactands (reactand mixture) and of the resulting CVR and CVD process at a high productivity level. This improved T-control allows:

[0315] 3.1 Restriction and, if appropriate, elimination of the function of the homogeneous gas reaction to form necessary preliminary phase (“precursor”) constituents (e.g. H₂O(g)) in the reactand gas as a speed determining, i.e. controlling CVD/CVR process step in favor of other mechanisms (e.g. conveyance and surface control without additional and/or excessive turbulences being generated).

[0316] 3.2 Improved control of the structure and bonding of the CVD layer on the substrate material/solid structural part.

[0317] 4. Restriction and, if appropriate, elimination of the respective T-, c- and v-boundary layers upstream of the reaction front, thus resulting in restriction and, where appropriate, elimination of the function of mass conveyance not only toward the interfaces (cf. points 1. and 2.) but also as far as the reaction surface, as a speed-determining process step, i.e. one which controls the maximum deposition rate by surface kinetics. This transition is promoted essentially by two methods by means of the Diaphragm*:

[0318] 4.1 Increase in the partial vapor pressure of the critical reactand component or reactand components directly at the reaction front as a result of the transdiaphragm pressure gradient by utilizing the resulting pulse, i.e. by overrunning the T-/c-boundary layer without critically influencing the v-boundary layer (insofar as it still exists in PD-controlled CVR and CVD processes, i.e. improved thermodynamic control at high production rates). The vacuum in the reactor space (and not diffusion!) is thus utilized to lead the reactand into the reaction zone (e.g. onto the reaction surface).

[0319] 4.2 Utilization of the transdiaphragm pressure gradient and the resulting kinetic energy/pulse of the reactand for overrunning the boundary layer: the causes atoms and/or molecules of the at least one reactand to impinge on the reaction surface, but only the reaction product is discharged. Here, the kinetic energy of the flow is utilized to over come the kinetic reaction barrier on the surface, the impact angle κ (FIG. 6) between the perpendicular to the substrate surface and the direction of flow of the carrier gas being a control variable for controlling the quantity of carrier and/or reactand gas.

[0320] The increase in reactivity of (on) the surface (and its bonding to the lower layer/solid structural part) which results from 4.1 and 4.2 by the use of a CVR and/or CVD Diaphragm* leads to improved uniformity in the deposition rate at a high productivity level, in which uniformity of the surface kinetics (surface diffusion etc.) and not conveyance onto the surface dictates the deposition rate, and has major importance for endothermic CVD(/CVR) reactions which make up about 90% of all CVD operations. The kinetic energy provided by the (if appropriate, laminar)“impingement flux” improves:

[0321] a) the compromise between a reduced v-, T- and c-boundary layer on one side and optimized α_Tvalues on the other side.

[0322] b) surface diffusion and therefore the quality of the resulting CVD surface even in the case of curved surfaces (cf.

[0323] FIG. 7a).

[0324] c) control of the microstructure of the surface layer, including refinement of the structure, without or with the reduced use of additives (possibly contaminating the structure) which are used for grain refining by the absorption of irregularities (e.g. steps, “kinks”, etc.)of the surface and which may possibly exert adverse influences on the surface properties.

[0325] The use of a CVR/CVD Diaphragm* therefore improves the control of the nucleation and/or surface properties by means of process parameters.

[0326] As a result of the improved control possibilities according to 3.1, 3.2, 4.1 and 4.2, the selection possibilities for the “precursor” gases or their constituents are increased. The diversity of design possibilities for a Diaphragm* (cf. VD solutions in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and in the following chapters) results, for CVD/CVR processes too, in more flexible controllability (acceleration, orientation, cf. FIGS. 5-7), of the trajectories of the respective (gas and carrier gas) components. The kinetic energy of the atoms/molecules impinging against or on the reaction surface is controlled both by the transdiaphragm pressure gardient and by the flow speed of the vapors or gases after passing through the Diaphragm* cross section, with turbulences being minimized or suppressed completely. Flow without turbulences, which occur, for example, downstream of a flow resistance, is of great importance for the shaping of a product deposited from the vapor phase in solid form by PVD, but also for the layer properties resulting from PVD and CVD.

[0327] The Diaphragm* therefore makes it possible to use thermodynamically more stable “precursor” gases at lower (and medium) temperatures or with higher rates at higher temperatures (cf. “low-pressure CVD”). Possible examples comprise (i) the substitution (synthesis) of complicated molecular chains (cf. D. C. Boyd, R. T. Haasch, D. R. Mantell, R. K. Schulze, J. F. Evans and W. L. Gladfelter, Chem. Mater. 1 (1989), p. 119.) for the control of phase and concentration of a CVD surface layer and (ii) cheaper and environmentally more friendly and/or less explosive additives (e.g. SiCl₄instead of SiH₄) to the entire reactand gas at at comparatively lower temperatures or with higher production rates at comparatively high temperatures. The overriding waste gas suction flow is a control variable for leading the individual constituents of the entire reactand into the reaction region of the reactor (e.g. onto the reaction surface and depends on the pumping and resulting flight speed of the gaseous components and on the Diaphragm* design, i.e. its design adapted specifically to the set object, cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and following chapters). If a plurality of different gases are simultaneously sucked into a CVD/CVR reaction space (or in a PVD mixing chamber) by a pumping system working at a given pumping speed (cf. FIG. 5), the individual Diaphragm* design (cf. points 1. to 5. of the abovelisted Diaphragm*-types 1 and 2) decides on the conveying quantity and speed of the individually supplied reactands, gases or vapors, on the transdiaphragm temperature gradient as the control variable for the temperature gradient between the gas/vapor source and reaction/deposition front (nb., in previous processes, in the region of thermal evaporation (with the exception of the process claimed in EP Application 94111991.9) the T-gradient between the vapor source and substrate supplies the propulsion force for material conveyance and, in previous CVD/CVR processes, the temperature remains one of the most important factors in controlling the reaction speed of the chemical reaction on the surface)

[0328] In the case of Diaphragm*-controlled mixing of different reactands, it is expedient for the gas supplied to the reaction space to be in the form of a “parallel connection” of a number of gas or evaporation sources corresponding to the number of gases and/or vapors. The gas/vapor sources of the Diaphragm* -controlled CVD processes must therefore preferably be designed in parallel form (cf. FIG. 5), the plant modules for components of differing volatility at an evaporation level assuming an arrangement having as short suction flow paths as possible for the low-volatility component or components and deflection angles, conducive to the suction effect, between the axis of symmetry of the last Diaphragm* before the deposition level (cf. FIG. 9).

[0329] As already in PVD processes, the Diaphragms for CVD/CVR processes can, of course, have positive, negative or zero temperature gradients and possess corresponding heating and insulating precautions. Directly before deposition, a positive T-gradient is employed, if appropriate, in CVD/CVR processes, in order to prevent the transdiaphragm pulse and acceleration of the possibly heated reactands from being reduced during transdiaphragm material conveyance or, in the event of a reduction, to ensure that this remains controlled.

[0330] 9. Extrinsic Control Forms I for the Recoupling of the Pumping Speed S to the Conveying Capacity Q

[0331] Under the conditions of controlled uncoupling of Q(x) and S, there arises the question of the reduction of the loss figures ζ both with regard to the macroscopic vapor flow, taking into account the products and their production conditions and production possibilities, and as regards the microscopic (i.e. transdiaphragm) vapor flow in the necessary porous diaphragms themselves. In contrast to previous material production processes, the combination of a suction flow (forced convection) and the specific porous diaphragm species Diaphragm* for mass separation without any change in the composition in the material flows affords universal freedom in the extrinsic (externally visible) design of the abovementioned vapor deposition process, i.e. the orientation of the (main) evaporation and deposition levels relative to one another. Extrinsic plant design therefore controls both the overall direction of the (macroscopic) vapor flow (i.e. the sum of the part flows, fed from the individual vapor sources, of the elementary and/or prealloyed vapors for the deposited blank, workpiece and/or structural part) and plays a decisive part in optimizing and reducing the overall interdiaphragm loss figures ζ. The transdiaphragm state gradients in the PD-controlled vapor deposition process according to EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 are therefore selected in such a way that the conveying capacity is preferably independent of the orientation in relation to gravitational acceleration (vector g). x is the direction of the shortest distance between the evaporation source and vapor deposition level and, unless otherwise characterized, the perpendicular to the surface of a Diaphragm*. This perpendicular can include all polar angles 0°<<360° and all azimuth angles 0°<Φ<360° relative to the gravitational acceleration vector g (FIG. 8a), and condensation before deposition, for example in the form of a “graft flow” is preferably avoided in the regular process design, insofar as it is not referred to expressly, since a “graft flow” greatly diminishes the efficiency of the process and necessitates additional precautions and special designs (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995).

[0332] FIG. 8 shows Architectural freedoms for combining the evaporation and/or mixing and/or deposition units (deposition chambers) of a vapor deposition process according to EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 which is operated and driven in the suction flow, i.e. by a vacuum, and which is controlled by means of a porous diaphragm, here altogether three plant units being combined, i.e. n, n+1 and n+2, and n+2 representing the deposition level (one or more deposition chambers). a): unidirectional; b): bidirectional and multidirectional; c): as b), but β_i=β_i′+β_i″ and/or β_i′≠β_i; d) As b) and/or c) but x₁≠0 and/or x₂≠0 with BXT=any xyz-translation plane and BXT2=any xyz-translation plane, here coplaner with n.

[0333] In light of the functional independence from gravitational acceleration g, achieved by means of the suction flow, a near-orbit production state (i.e. a production state corresponding to space station conditions), with strategic significance for the question of “vacuum and weightlessness?” or “vacuum alone?”, is created, which not only lays stress on new factors in material production, but would also seem to make extraterrestrial mission activity substantially more efficient.

[0334] The designation n, (n+1) and (n+2) in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 made it clear that the porous diaphragm-controlled vapor deposition process makes it possible, in principle, to have a quasi-infinite lining-up (i.e. “series connection”) of evaporation units+Diaphragm* which fulfill the main criteria of discontinuously falling hydrostatic pressures over a vacuum chamber system with a corresponding “series profile” and, at the same time, generate a (macroscopic) total resistance for the overall suction flow, said resistance being relatively high for the plant as a whole. However, one of the fundamental requirements for the abovementioned vapor deposition process is that the retentivity of a Diaphragm* F_Dshould become as high as possible in relation to a flow resistance F_F, i.e.:

[0335] F_D>F_F  (30)

[0336] (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995). It goes without saying that the reproducible intermixing of widely differing components, such as, for example, magnesium and chromium, in the vapor phase necessitates very significant dp/dx gradients locally at the diaphragm transition for Mg and productivity, along with corresponding quality, is dictated by the reservoir or retentivity of the respective Diaphragm*, F_D.

[0337] Since, in principle, series connections increase the flow resistance to a greater extend than a parallel connection of the same resistances, in practise a Diaphragm*-controlled vapor deposition process driven by the pumping speed S and having purely “series”-designed main levels n, (n+1), (n+2), etc. is not only a) limited in productivity, but is also, above all, b) inferior to a parallel connection of the main levels of the process. Consequently, the main, i.e. series-designed levels of the abovementioned vapor deposition process comprise corresponding subunits A_i(for evaporation at relatively low temperatures), B_k(at relatively high temperatures) and C_k(for vapor deposition) which are also designed in “parallel” within a level n, (n+1) and (n+2) and are hereby claimed (n.b., EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995, only “series-connected” evaporation chambers separated by a Diaphragm* are explicitly claimed). For example, a plant of type (n+4) consists of an Mg alloy with 3 alloy components, but requires relatively high pumping capacity in the case of the same vapor conveying quantity as a parallel connection, as shown in FIG. 9. In that case, for example, the n-level and the (n+1)-level consist in each case of 2 chambers, i.e. i=2 and j=2, but it is also possible that i=4 and j=1, in this case mixing operations taking place only in the B-unit and the component having the lowest saturation vapor pressure preferably being located, irrespective of the Diaphragm* form, in the middle, i.e. in the central axis of the n-level, if the suction effect from the following plant unit having a corresponding pore design can thereby be optimized.

[0338] FIG. 9ais as FIG. 2, here showing an alternative architectural arrangement, i.e. 5 evaporation chambers in parallel in the n-plane, here the height of the individual evaporation chambers being proportional to the corresponding conveying flow controlled by the respective porous diaphragm Diaphragm*, which is the case, for example, for 5 elements with a similar saturation vapor pressure, followed by a mixing chamber which, if appropriate, is shaped into a Laval nozzle inlet (or the like), so that the cross section of the resulting Diaphragm* is reduced to a part (of the projection) of the maximum cross section of the evaporation chamber, promotes the conveying flow mechanics (e.g. by eliminating turbulences of the order of magnitude of the flow ducts in the PD) and the central conveying flow (cf. FIG. 9b) and provides for relative freedoms in the form of movement of elongate and/or rectangular condensers in the deposition level, including the deposition space (21) having the height h, here with a discontinuous circular movement for e.g. a “plank” condenser in the continuous batch mode, 24 denoting a sliding stamp, 25 a sliding jaw, 26 a (pull) gripper and 27 a roller table.

[0339] FIG. 9bis as for FIG. 9a, here showing the evaporation chambers in the n-level being arranged (semi)circularly (i.e. in an arc) around the periphery of the mixing chamber (19a), here without a vapor source, and the height of the individual evaporation sources in the n-level being proportional to the corresponding saturation vapor pressure of the corresponding elements, so that, where appropriate, a super proportional suction effect on the centrally arranged evaporation chamber of the n-level is achieved, but the parallel connection has, as possibly also in FIG. 9a, partially very different dT/dx gradients per individual PD in the case of (obviously and approximately) the same temperature in the mixing level (chamber) n+1. (24): displaceable partition, (25): flat hollow wall for receiving the movable partition.

[0340] The diameters d_zused for the flow ducts of a porous diaphragm Diaphragm* (PD) extend over a wide range and depend primarily on the coneying flow necessary for writing off an entire plant and/or on the transdiaphragm state gradients. The d_zrange and the current d_zvalue are therefore MFP-independent dimensions, MFP being the mean free path length in the suction flow having different components (see above). In the case of a molecular duct flow, however, the minimum d_zvalue (e.g. for relatively minor variants of this Diaphragm* species) is dependent on the chamber arrangement in a similar way to the cosine law for the emission of molecules and atoms from an infinitesimally small (point) vapor source having the area dA_v. As mentioned above, in practise, the q_v,mol(x)° values are greatly influenced by actual conditions (cf. 1st chapter, SECOND PART of the invention). According to the cosine law, evaporation is assisted in the direction perpendicular to dA_vfor those impingement angles θ for which cos θ=1 or the emission angle Θ is as near as possible to zero. Knudsen proved the validity of the cosine law for pore diameters of

[0341] d_Av=(4dA_v/π)^½<MFP/10  (31).

[0342] In the abovementioned process, the pumping speed S and the resulting vacuum and suction flow are the propulsion force for mass conveyance, not a pressure flow controlled by the temperature-limited (saturation) vapor pressure p* of the elements. On account of the PD designs, the overall suction flow control remains effective even when a) the p*-values of the components of a multicomponent alloy differ widely, b) transdiaphragm material transport is controlled regionally, i.e. for an individual evaporation chamber, by p* and c) a parallel mode (e.g. with i=4 and j=1) is selected (cf. FIGS. 9aand 9b). It follows from the reversal of the cosine law that, particularly in the case of molecular flow, for the PDs of vapor sources arranged in parallel:

[0343] a) the suction effect is most effective when the evaporation surface and/or the x-perpendicular of the PD of the chamber arranged with the component having the lowest vapor pressure p*(T) is arranged, preferably at a deflection suction angle Θ=0°, but at least at a very small angle Θ to the perpendicular of the next following Diaphragm* (e.g. before the deposition unit n+2 or e.g. C_kand/or to the perpendicular to the surface of a plane-deposited blank, cf. FIGS. 9aand 9b), and if the evaporation chambers of the components having high p*(t) values (such as, for example, Mg) are arranged at the sides of the n-level and therefore with relatively high suction effect deflection Θ relative to the x-perpendicular of the (last) Diaphragm* before the deposition unit (e.g. n+2 or e.g. C_k) and/or to the perpendicular to the surface of a plane-deposited blank (cf. FIGS. 9aand 9b), and

[0344] b) the critical limit of the Θ-independent pore diameter of the Diaphragms*

[0345] d_z^min,mol=MFP/10  (32)

[0346] is preferably d_z^min,mol>MFP/10,

[0347] in order to transfer efficient suction effects to the sum of the components of an alloy system in the suction flow mode of the abovementioned vapor deposition process from one plant unit to the next in a similar way to the cosine law.

[0348] With an increase of T, p* rises and therefore MFP falls, so that d_z^minfalls and the degrees of freedom for d_zof a given Diaphragm* rise. For given d_zvalues, the transdiaphragm pressure difference dp/dx depends on the suction flow q(x,S) and is controlled by means of the respective Diaphragm* design (selection and dimensioning of the structural elements) and not by the vapor pressure p*. The saturation pressures p*(T) are used, via regulating members (see below), only for the fine control of the conveying flow q(x,S) and for safety during the operation of the plant. Consequently, in the case of d_z^min,mol≦MFP/10, for a given Diaphragm* and a given saturation vapor pressure p*(T), dp/dx also becomes higher, the higher Θ is. Consequently, in the evaporation chamber for Mg, on account of the relatively high p*(T,Mg) values the buildup of the corresponding retentivity F_D(Mg) can be assisted by relatively large angles Θ(Mg). Consequently, the Diaphragm* for components with high saturation vapor pressures (e.g. Mg) is characterized, in comparison with the Diaphragm* for components with relatively low saturation pressures, by a relative arrangement having:

[0349] relatively high Θ(Mg) values and/or

[0350] relatively small pore diameters d_z^eff(Mg) and/or

[0351] a relatively small number of corresponding flow ducts N_D^eff(Mg).

[0352] By contrast, for a component, such as titanium, in view of the relatively low p*(T,Ti) values, as high a suction flow as possible must come into effect in the Ti evaporation chamber, and the corresponding Q(Ti) values are as low as possible and the d_z^eff(Ti) and N_D^eff(Ti)values relatively high. Since the conveying capacity (Q(x,S), which is discharged from the evaporation chamber of one component to the next plant unit by a Diaphragm* at a given pumping speed S, depends on:

[0353] Q(x,S)=fn(d_z^eff,N_D^eff,Θ)  (33)

[0354] in which d_z^effrepresents, in the suction mode, preferably a Laval nozzle cross section (cf. SECOND PART of the invention), the specifically best coupling effect between S and Q(x,S) is achieved for Θ=0° and necessitates a combination of a parallel and series arrangement of the plant units. The plant specification must take into account the mixing action between the source of the evaporating components (e.g. in n) and the deposition level (e.g. n+2) in (n+1) and FD=fn (diaphragm design, number and type of bifurcations, p*(T), etc.). Coupling is optimized when the suction flow converts the molecular movement of the gas into a collective=military movement (laminar flow) gradually to completely.

[0355] The optimized architectural (extrinsic) design of the units of the vapor deposition process therefore includes mixing chambers which themselves consist of macroscopic Laval nozzles or related macroscopic contractions in cross section and have a baffle wall in the region of the corresponding Laval cross section (see FIG. 13bshowing continuation in front of FIG. 13a, here with a Laval nozzle-like mixing chamber and quasi-parallel arrangement of the evaporation levels n and n+2, guide plates (50) for hydrodynamic (dynamic) pressure control fine-adjusting the arrangement of the main levels in the fluidic hierarchy of the abovementioned vapor deposition process (i.e. n, n+1, n+2, etc.) and MT=mean temperature, SS=supporting struts and S=flow routing).

[0356] Furthermore, the individual evaporation and deposition levels form with one another any polar angle 0°<β₁<360° and 0°<β₂<360° and any azimuth angle 0°<Δ₁<360° and 0°<Δ₂<360°, some basic forms of which are represented in FIGS. 8b—d. Insofar as the axis (of symmetry or central axis) of the evaporation units A and B) form with one another a polar angle β₁or an azimuth angle γ₁, unequal to 180° or the corresponding evaporation and deposition level and/or chambers form with one another and angle β₂or γ₂unequal to 180°, these are connected to one another via a Diaphragm* in such a way that the central axis or axis of symmetry x (i.e. the perpendicular to the Diaphragm* surface) of the Diaphragm* forms correspondingly smaller angles with the central axes and axes of symmetry of the adjacent evaporation and/or deposition and/or deposition units (cf. FIGS. 8c, 8dand 9b).

[0357] At the same time, (macroscopic) vapor-deflecting suction pipes and bends are used before and after the vapors have passed through the Diaphragm*, such as are known from ventilator technology fir suction flow and/or from axial turbomachines (cf. microscopic solutions for transdiaphragm fluid mecanics, SECOND PART of the invention). They comprise (here, of course, heated) delivery-side suction boxes and inflow nozzles, with and without a curved piece/curved shapes, and suction-side diffusers (see FIG. 8c). It therefore also goes without saying that all the walls for guiding the vapor flows in the evaporation units and vapor shafts are heated for the purpose of suppressing the condensation of individual components and therefore of maximizing the yield, specifically preferably in the resistance mode and/or in the induction mode, like the Diaphragms* themselves (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995).

[0358] The independence of the extrinsic plant design from gravitational acceleration allows complex and efficient architectural combinations of the “low-temperature” evaporation level n (or unit A_iin parallel connection with B_j) with the “high-temperature” evaporation level (e.g. n+1 or evaporation unit B_jin the case of a parallel connection with the deposition level (e.g. n+2 or C_kin a parallel connection of with the “low-temperature” evaporation level Ai) and with the deposition level (e.g. n+2 or C_kin a parallel connection of a plurality of deposition units with one another) in 3-dimensional translation space and, particularly for large-scale industrial production according to the claimed vapor deposition process, permits efficient space utilization with numerous optimization possibilities for the intrinsic design (i.e. the type) of the basic functional and production units A, B and C and their number i, j and k.

[0359] The degrees of freedom in the 3-dimensional translation design of the abovementioned vapor deposition process, which emerge, on the one hand (i), from the hierarchy of the propulsion forces, pumpin speed (pumping capacity)→ suction flow control→ pressure gradient per (main) Diaphragm* and the resulting overall p/T-gradients der Diaphragm* and, on the other hand (ii), from the discrete intrinsic design of the basic functional levels, (e.g. n, n+1, n+2), allow extremely high efficiency in the overall arrangement of the evaporation and deposition units for production and processing on an industrial-scale ladder which, depending on the object and product, is achieved a) not only by extensive optimization of the 3-dimensional configuration and, for example, of the number i, j, k of units A, B, C, but also b) by intensive optimization of the ΣA_v/ΣV_pratio of each individual unit i, j, k, in which A_vis the surface of the condensed material to be evaporated and V_pis the volume of the respective production unit of type A (low-temperature evaporator), B (high-temperature evaporator) and C (deposition unit) (cf. FIGS. 11-15).

[0360] FIG. 13ashows compact designs for a PD-controlled vapor deposition process I operated by suction flow, here conventional evaporation chambers with a high surface-to-volume ratio and diverse form adapted to a desired fluid mechanics e.g. for 0.1-1.0 mbar at 400-1700° C., ensuring and controlling the condensation-free vapor conveyance to the next plant unit of the abovementioned vapor deposition process in the case of a minimized loss figure ζ, (first page) Collani-like pear-shaped and trapezoidal designs, including the evaporator tower (40) and flow elements (41) for the reduction of flow vortices, and (second page) a top view of the overall evaporator tower (40) (center of page) and longitudinal section with an inner shaft (42) and outer shaft (43), the peripheral outer shaft, on account of its greater freedoms in dimensioning, preferably for macroscopic suction flow routing and control, e.g. via angles of inclination β_Mand/or β′_Mfor (dis)continuous increase in cross section and/or conveying flow, the central inner shaft preferably for supplying the tiers of the evaporator tower with melt via a tube system (44) which is heated (preferably inductively and/or by the resistance method), 45: evaporator tower suspension, 46: evaporator tower pillar, 47: (if appropriate, all round) evaporation slit (vapor outlet) with regulating member, 48: valves, 49:

[0361] suction flow direction, AE: alkaline earth metals (Ca, Sr, Ba), RE: rare earth metals (including mixed metals and heavy rare earths (Gd to Lu).

[0362] 10. Intrinsic Control Forms for the Recoupling of the Pumping Speed S and the Conveying Capacity Q

[0363] The vapor deposition process claimed in EP 94111991.9 is, where appropriate, a system which organizes itself via the Diaphragm* design. The transdiaphragm pressure gradients dp/dx between the evaporation chambers and between the at least one evaporation and/or mixing chamber and the at least one deposition chamber build up either after the opening of the vapor sources by means of the part flows guided via the bifurcations (FIG. 10) and supplying a significant part of the necessary vapor quantities which are retained by the Diaphragm* and/or after the opening/closing of the apertures and valves introduced in the flow duct. In addition to the bifurcations and their design possibilities, the geometric elements having a high c_W(English c_F) value at the flow inlet define the retentivity or force of the diaphragm, F_D(EP-Application 94111991.9, Aug. 1, 1994, and PCTApplication PCT/EP95/02882 of Jul. 19, 1995). Their influences on the retentivity are exerted due to the fact that the vapor flows through the bifurcations and round the geometric elements.

[0364] The flow resistances F_Fare, in total, preferably lower than F_D, in order to optimize the functioning of the Diaphragm*-controlled vapor deposition process. The vapor quantity effectively released per evaporation and/or mixing chamber is uncoupled from the absolute value of the pumping speed S, although any variation in the pumping speed by varying the absolute pressure in the deposition chamber, which is codetermined by factors, such as leaks, gas escape from the vacuum chamber walls, sealing materials, including the O-rings used, etc., is one of the control variables for the vapor quantity actually released per evaporation chamber.

[0365] The other method which couple the suction flow as propulsion force (which, for example, controls the maximum production rate) and the Diaphragm* (as the structural part which controls the current conveying capacity, e.g.

[0366] Q_v=p*V/T  (34)

[0367] (unit e.g. [torr* lite/sec])) include:

[0368] (i) Conventional evaporation chambers: regulating members for varying the respective vapor exit cross section of at least one of the vapor sources in at least one of the vapor sources in at least one of the conventional evaporation chambers n, (n+1), etc. A_i, B_j. The regulating members are controlled selectively by a microprocessor (indicated in FIG. 2 by electric junction terminals 1a-6a) in accordance with in situ analytic and desired values, the locations of the analyses of the coneying flow preferably being directly in front of a Diaphragm* (in the direction of flow). In conventional evaporation chambers, a plurality of vapor sources (e.g. 1-6 in FIG. 2) can be arranged in a tower-like manner in the vapor shaft. The individual vapor sources can be regulated to different temperatures and allow the simultaneous evapo ration of different components in one chamber, the vapor pressure curves of the respective components not being too far apart and the control of the evaporation mode of a chamber being improved, if appropriate, by insulating the individual evaporators thermally from one another.

[0369] (ii) Freedom of form of the evaporation chambers/external: The particular advantage of a vapor deposition process operated by suction flow is not only freedom in orientation between individual plant units (see above), but also the form of the individual evaporation, mixing and deposition chambers themselves, since the suction flow also draws the vapor out of vapor sources in remote corners of an evaporation chamber. In practise, in the vapor deposition process operated by suction flow, anything which is not prohibited is allowed (for example, condensation during material conveyance from the vapor source to the deposition level is just about the worst which can happen, since it possibly accumulates and actually undermines a control of the process (cf. EP Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 vs. German Patent Application No. P 44063334, Mar. 1, 1994, made by Leybold Durferrit GmbH, Hanau.

[0370] The (external) walls of the evaporation chambers are, where appropriate, shaped as rectangular, trapezoidal, cylindrical and/or (Laval) nozzle-shaped vapor shafts for improving their fluid mechanics, in order to achieve a flow form promoting the aerodynamics of evaporation (FIG. 13a). This is advantageous particularly when the necessary reservoir formation is relatively small and/or a plurality of Diaphragms are used for the transdiaphragm evacuation or supply of a conventional evaporation and/or mixing chamber, said chambers being capable of forming the angles 0°<α₂<180° and 0°<Φ₂<180° with one another. FIG. 13ashows a pear-like form of an evaporation chamber. A flow form which fundamentally improves the aerodynamics is achieved by a variation (increase and decrease) in the diameters of the evaporation shaft in front of/in the region of a baffle wall and thereafter and in the diameters of the evaporation sources and, where appropriate, an increase in vapor flow cross section is obtained at a decreasing distance from the Diaphragm*. It goes without saying that, to avoid condensation, the walls of the evaporation and/or mixing chambers are also heated, specifically preferable inductively or by the resistance method.

[0371] (iii) Internal forms of the evaporation chambers: Since the components of conventional evaporation chambers are, as a rule, liquid, in evaporation shafts the vapor is guided past the Diaphragm* on the periphery of the evaporation sources (arranged, if appropriate, in a tower-like manner) in parallel with the gravitational acceleration vector g but also at angles 0°≦α_g≦180° (α_gbeing the angle between the liquid surface and gravitational acceleration vector g). In the event of 30°<α_g<150°, the fluid mechanics can be assisted by a centric flow duct in the tower-like arrangement of the evaporation sources (FIG. 13a). In each of the possible instances of orientation (see above), central shafts can be utilized for supplying the crucibles with melt (FIG. 13a), and the evaporator crucibles of a conventional evaporation chamber are capable of receiving alloy scrap which contains a preferably volatile component, and, in a continuous evaporation mode, this is used either a) for the pure component and/or b) for in situ alloying directly into a new product.

[0372] For appropriate recycling, it is possible to use Mg alloys, products with alkaline-earth metals (Ca, Sr, Ba), rare-earth metals (e.g. magnetites and magnetic materials), but also Al—Li alloys and other Li-containing products. The crucible are likewise designed in such a way that large quantities of elementary raw materials can be received and these is/are processed via evaporation into ultrahigh-purity material. Particularly during recycling and/or processing to form a pure material, the fluid mechanics within conventional evaporation chambers are improved for very high conveying flows without condensation before deposition. This involves continuous variations in cross section for adapting the flow speed and (macroscopic, i.e. in contrast to transdiaphragm-microscopic) geometric elements with very low resistance coefficients c_W(FIG. 13a), as are already used in the Diaphragm* itself (cf. EP Application 94111991.9). In the conventional evaporation chamber, they prevent the formation of pronounced vortices which may occur, for example, due to shadings of the suction effect and/or of the conveying flow by discontinuities on the chamber and/or crucible walls and which represent an increase in the loss figure and a risk of premature condensation. Also, to reduce the loss figure ζ, etc., the crucibles themselves are beveled and/or are complemented by the use of flow elements (FIG. 13a).

[0373] (iv) Balancing of the main Diaphragm* relative to one another, i.e. the relative influence of S on the individual conveying flows q_vflowing through the diaphragms and the resulting quantity ratios q_v(n)/q_v(n+1), etc. q_v(A_i)/q_v(B_j), etc. The necessary hydrostatic pressure Preq in an evaporation unit, etc. emerges from the plant design (cf. extrinsic control forms . . . ) and from the product form in the deposition chamber. p_reqis universal, since the materials and material combinations to be processed are universal, and is therefore not tied to specific stipulations (cf. German Patent Application No. P 44063334, Mar. 1 1994, made by Leybold Durferrit GmbH, Hanau). The following pressure values preferably apply to the case without an “external”, carrier gas circuit for “trapping” by nondeposition (see point (vi) below). In the at least one evaporation chamber (e.g. n) or Ai for components having relatively high evaporation pressures and relatively low evaporation temperatures, such as Mg, Al, P, S, Ca, Sr, Ba,Ce, La, Pr, Nd, Sm, Gd, heavy rare-earth metals, such as Tb, Dy, Ho, Er, Tm and for the preferred misch metals (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995), temperatures of between 300° and 2300° C., with a hydrostatic pressure range Δp_reqof 1 to 1000 mbar, are set. The preferred pressure ratios are governed by the precise plant design (see above), including a possible use of physical transport reactors (PTRs), e.g. in n and/or (n+1) (see below).

[0374] In the at least one evaporation chamber (e.g. n+1) or B_jfor components having relatively low evaporation pressures and relatively high evaporation temperatures, including the corresponding PTRs (sse below), such as Be, B, Al, Si, Ti, V, Cr, Mn, Zr, Fe, Co, Ni,Cu, Y, Nb, Hf, Sm, Gd, but also for the heavy rare earth metals, such as Tb, Dy, Ho, Er, Tm, Yb and for the preferred mischmetals (cf. EP-Application 94111991.9, Aug. 1, 1994,and PCT/Application PCT/EP95/02882 of Jul. 19, 1995), temperatures of between 1200° and 3000° C., with a hydrostatic pressure range Δp_reqof 0.01 to 100 mbar, are set. Here, too, the preferred pressure ratios are governed by the precise design of the plant as a whole, including a possible use of physical transport reactors (see point (vi) below).

[0375] (v) State conditions in the deposition chamber and condensation surface: Finally, at the condenser level (e.g. (n+2)), a constant or approximately constant surface temperature of between −2000 and 300° C., preferably between −50° and 250° C., is set on the surface of the blank or workpiece at the moment of vapor deposition (different from the moment of in situ consolidation, see the next section of this chapter), taking into account its thermal conductivity, in that the cooling capacity (for condensing the vapor from the above-mentioned evaporation and/or mixing units on the condensation surface) and the distance of the condenser are increased and/or, where appropriate, adapted to the increasing thickness of the blank or workpiece, for a given alloy or a given high-purity material this temperature, where appropriate, being varied in a controlled manner according to the product requirements and not exceeding a temperature tolerance of +/−40° C., but preferably of +/−5° C., the distance between the Diaphragm* and condenser, which increases with increasing growth of the blank or workpiece, being coarsely and finely controlled by a microprocessor. Furthermore, the hydrostatic pressure range Δp_reqin the deposition chamber (21) (see FIGS. 1, 2, 9a, 9b, 14, 15a, 15b) and/or in the entire deposition level is set at 500-0.1 mbar, its exact value depending very closely on the precise design of the condenser level and of the process as whole (see below).

[0376] FIG. 14 shows compact designs of PD-controlled vapor deposition process II operated by suction flow, here (derivation for the compact) circular process I (i.e. dΔT_A=0, with T_A=temperature on the (deposition-side) deposition surface of the blank), with a)-d) side view of the transition from the evaporation and/or mixing region (and/or chamber) before deposition, with the variants (19b) and (19c), into the deposition level, the mixing chamber being followed by at least two, if appropriate>two vapor outlets and deposition chambers in the deposition level for a continuous batch mode, the “plank” or any other condenser “batch” mode within the deposition level with in-series deposition (21) and (in situ) consolidation chambers (21a) with a high surface-to-volume ratio, the number of condensers (13) (cf. ringed numbering) for ensuring continuous operation resulting preferably in symmetrical condenser routing according to the formula

[0377] n*(21)>/=3/2*n*(12),

[0378] and e) and f) vapor shaft, as seen from the deposition level, and g) deposition level, as seen from the mixing chamber, and the height position of the roller guide, which is arranged around the and/or below/above/laterally offset evaporator tower and by means of which and on which the “plank” condenser is moved, being controlled by a system of supporting tubes which are located in hollow tubes and, if appropriate, are moved pneumatically and are controlled by a microsensor-microprocessor (cf. FIG. 12), and, where appropriate, at least two, preferably four or eight oppositely arranged separate deposition chambers according to FIGS. 2, 9A, 9band 12 being located at the mixing chamber outlet independent of the g-orientation, the condenser/condensers being connected, between the (discontinuous) rotations about and/or below/above/laterally offset evaporator part, to a central cooling system, and the temperature of the cooling liquid being controlled and being regulated to constant values variable in a controlled manner, depending on the product.

[0379] (vi) Use of physical transport reactors (PTRs), which significantly increase the evaporation rate of at least one production rate speed-determining component by utilizing controlled flow ratios and by the use of linearized and non-linearized vapor sources with and without the use of regional (in the PTR) and global (relating to the process as a whole) flow circuits, and also without an excessive temperature increase in comparison with hydrostatic pressure ratios (HSR) and, at the same time, obtain the flow propulsion force from the associated Diaphragm* (e.g. between n and (n+1)). The use of PTRs is decisive for the final overall design of the evaporation plant. For the evaporation rate of a PTR, the arrangement of the evaporation sources in relation to one another and their surface as well as the ratio of this arrangement to the suction flow play an important part in determining the productivity Q_max(S) of an entire plant operating the abovementioned vapor deposition process.

[0380] 11. Extrinsic Control Forms II, Here the Condenser Level

[0381] Various processes propose, for vapor deposition, reciprocal condenser movements and/or deposition to form blanks curved in at least one direction of translation. A PVD blank, the surface temperature (surface temperature intervals) of which is to be kept as constant and/or as low as possible and which is to be processed, without preforming,in an extruder, etc., requires a continuous batch mode in a lateral form of movement (e.g. in a, where appropriate, horizontal plane). A continuous batch mode in a lateral form of movement with blanks, the surface temperature (surface temperature intervals) of which is independent of this lateral form of movement, however, requires a circular or circle-like movement of the condsensers for as efficient a space utilization as possible and resulting vacuum control.

[0382] 11.1 Restriction to Reciprocal Condenser Movement

[0383] During vapor deposition, that part of the blank which is exposed to the vapor heats up, whilst the unexposed part cools again. The disadvantage of the reciprocal plank condenser in comparison with the circular process is that the resulting temperature intervals ΔT=T_max−T_minat the ends of the reciprocally moved plank collector increase with the length of the condenser and blank in comparison with DT in the middle of the condenser, i.e. dΔT=k*l_con, and the value dΔT increases particularly for high conveying flows (cf. FIG. 11). However, for as nonporous a production as possible of solid cross sections of metastable phases (cf. EP-Application 94111991.9, Aug. 1, 1994,and PCT Application PCT/EP95/02882 of Jul. 19, 1995) with as low a degree of conversion as possible in the direction of an equilibrium structure, the resulting temperature interval ΔT must be kept as small as possible.

[0384] FIG. 11 shows a discontinuous temperature intervals ΔT on the blank surface as the fundamental disadvantage of the to and fro (i.e. reciprocally) moved “plank” condenser (or “plank” collector, i.e. the individual flat-plate condenser). This disadvantage is the background for the motivation to use rotating collectors in VD processes, but these have hitherto been considered only as rotating cylinders with a curved blank surface and along with the need for an exsitu forming operation before conventional further processing. The need for a uniform ΔT=T_max−T_min=const., i.e. dΔT(x)=0, arises from the requirement for a compromise between the following points 1. and 2.:

[0385] 1. The maximum surface temperature T_maxduring vapor deposition should not exceed the transformation temperature T_transof the respective metastable phase (supersaturated mixed crystal, etc.), e.g. in the desired end product. In proportion as T_trans(e.g. as a consequence of the choice of alloy) rises, the expected time t_exp, in which the surface can be exposed to the (hot) vapor, also increases. However, the relative time interval, in which the material is not exposed to the vapor, i.e. Δt→Δt_max, in the case of the to and fro (i.e. reciprocally) moved “plank” condenser remains uninfluenced as a universal consequence of this. The temperature irregularity dΔT(x) inherent in this process must therefore be eliminated by other means.

[0386] 2. The minimum surface temperature T_minmust allow a minimal movement of the surface atoms, in order to eliminate stresses, microstresses and porosity occurring as a result of shadings, before, during and after the insitu consolidation operation (and the associated cooling).

[0387] The identification of the T_opt<T_transf, at which porosity no longer occurs, and (ii) the use of alloys with high ΔT=T_transf−T_optas a consequence of the corresponding alloy constitution, (iii) the process solution of this quality problem lies in constant and as many as possible, but constant, vapor deposition operations during the circular movement (cf. FIGS. 12, 14 and 15). The limitations in the rotational speed and rotational diameter of a rotating condenser due to the resulting turbulences on the deposition surface make it necessary to have as many deposition chambers (21) as possible in the (g-independent)deposition level (cf. FIG. 9a) per complete circuit (e.g. πD), this making it necessary, due to the process-specific suction flow routing to have vacuum chambers which are as flat as possible at an optimized, but constant distance h=fn (MFP).

[0388] By contrast, the inherent advantage of condensers moved in a circle is constant ΔT intervals over the entire condenser length l_con, i.e. dΔT=0, so that, with condenser surfaces moved in a circle, but at least in a plane, the surface temperature interval ΔT can be better homogenized and minimized. Appropriate g-independent circular processes constitute a basic condition for large-scale vapor deposition processes, for which the suction flow mode is indispensable (in a similar way to diecasting for casting processes). Logically, therefore, the batch mode operated in a circle or in another form of movement as vacuum-efficient as possible, if appropriate horizontal, is also indispensable for a vapor deposition process operated by suction flow.

[0389] 11.2 Restriction to Bent and/or Curved/Dis-Shaped Blank Surfaces

[0390] A fundamental disadvantage of blanks evaporated on cylinders (i.e. with a bent surface) and/or on disks and/or of resulting workpieces (after in-situ consolidation) in comparison with blanks evaporated on flat-rectangular or virtually rectangular condensers (substrates) is the necessary preforming and/or machining operation before conventional further processing (rolling, extrusion, etc.). An “ex-situ” processing (including macroscopic consolidation, such as HIP) without preceding microscopic consolidation (e.g. microrolling, see below) and/or without air contact of non-compacted pores, is virtually impossible in the case of blanks which are bent over a significant proportion (to a great extent). The corresponding preforming/forming operation not only increases the operating costs, but, in the case of materials defects, also puts the blank, etc., itself at risk. In comparison with condensers having (sharply) bent (e.g. cylindrical) surfaces, the flat collector affords further advantages:

[0391] vacuum chamber and vacuum lock volumes to be evacuated which are relatively small in relation to the deposition surface unit, which signifies, particularly for vapor deposition processes operated by suction flow, a relief of the pump system and of the vacuum system cleaning work which may be necessary.

[0392] relatively little influence of the “background pressure” on the chamber dimensioning, i.e. relatively efficient possibilities for increasing the tonnage in terms of the necessary vacuum chamber technology (i.e. high (deposition) surface to (vacuum chamber) volume ratios).

[0393] constant impingement angles and/or impingement angle ranges of the corresponding vapor trajectories, hence relatively constant accomodation coefficients (ranges) (see below) and therefore the possibility of deposition rates and vapor deposition yields which are high per unit area (i.e. specific) as well as better control of porosity, thus resulting in lower requirements placed on/easier microconsolidation.

[0394] easily designed possibilities for the assembly and exchange of in situ consolidation plants outside the actual deposition region (21) (cf. FIG. 9a).

[0395] multiple deposition, relatively easily implemented in design terms, via (21) in one deposition level (e.g. n+2) cf. FIG. 12), thus resulting in relatively high deposition rates at relatively low (rotational) speeds of the condenser feed mode, and relatively low impact forces acting on the pulse of the vapor trajectories, along with a high possibility of control for avoiding the formation of a second oxide monolayer between the deposition intervals.

[0396] “Near-net shape” production of metal sheets (as a possibly primary large-volume product within the ductile materials).

[0397] Adaption of appropriate deposition system prototypes to mass production, without the need for a substantial variation in plant construction.

[0398] 11.3 Flat (if appropriate, horizontal) Batch Mode and/or Flat Disks

[0399] Weighing up the advantages and disadvantages of previous vapor deposition solutions favors a continuous, where appropriate circular batch mode of flat condensers. The restrictions mentioned result in the batch mode, routed in one direction of movement, with a flat “Plank” condenser, preferably having rectangular side dimensions, with vapor deposition, repeated as often as possible and in a number optimized in relation to the spatial dimensions of the process, as the optimum condenser solution for the vapor deposition level in large-scale vapor depositon processes operated by suction flow (cf. FIG. 12).

[0400] The technical details are given in the description of FIG. 12 and of FIGS. 14 and 15. FIG. 15ashows compact designs of a PD-controlled and g-independent vapor deposition process II operated by suction flow, here circular process II (i.e. dΔT_A=0, T_Abeing the temperature on the (deposition-side) deposition surface of the blank), here a single condenser in the form of a cooled disk (52) in the vacuum chamber (51) for relatively small pilot plants, (53) bottom of the vacuum chamber, (54) hollow shaft, (55) tubular connection piece, (56) rolling bearing, (57) drive shaft, (58) displacement directions of the drive shaft, (59) guide plate, (60) controlled routing of a coolant flow ac according to the arrow 60, (61) alloyed blank, (62 and 62a) vapor shafts, (63) evaporation zone, (64)-(67) evaporators, (68) mixing zone, (69 and 69aand 73 and 73a) PDs, (70) condensation surface, (71) intermediate chamber, (72) pumping set, (73) evaporation zone, (74) and (75) further evaporators, (76) baffle wall and (77) flow elements for suppressing dead flows and for reducing the loss figure ζ and resulting F_F, (78) region of turbulent flow before entry into the PD before deposition (cf. FIG. 9aand 9b), and width b_TMin the range of 0<b_TM<0.45 b_D, and a) preferably eg. for pure materials, high evaporation rates and rotational speeds, whilst b) preferably e.g. for alloys, relatively low conveying flows and rotational speeds of the cooling disk. FIG. 15bis as for FIG. 15a, here showing *qualitative pressure difference as a result of separating segments between the intermediate chamber and the vacuum chamber for the blank.

[0401] In the batch mode accordingding to FIG. 12 and FIG. 14, the condensers are surrounded by a vacuum chamber which has the regions (31) and (34) and which arranged annularly or polygonally around a coaxial hollow shaft (13j). Located in the hollow shaft is a driveshaft (13i) for transporting the collector system which is assisted by sliding rams (24), sliding jaws (25), grippers (26) and roller tables (27) (cf.

[0402] FIG. 9a). The hollow shafts are, if appropriate, rotatably mounted in a coaxial tubular connection piece (55), by means of two or more rolling bearings (56) (cf. FIG. 15a,b). The driveshaft (13i) is rotatable about a g-independent axis of rotation A_Rand is directly connected to the condensers by means of coolant conduits for a preferably liquid cooling medium, said conduits being shown here in any more detail. In the batch system, the cooling medium is led further via a rotating distributor (and collector) (13d) into the condensers and is led back to the cooling assembly (13f). The condensers possess cooling ducts which, if appropriate, are designed in meander form (FIG. 12, part b) or, via circular guide plate (59), allow controlled guidance of the coolant flow within the condenser (“Plank” and/or circular disk) (FIG. 15a,b). The bottom (53) of the vacuum chambers in the deposition level is adapted to the shape of the vapor shafts, their transitions from the evaporation and/or mixing region (cf. 19, 19band 19cin FIG. 14) to the Diaphragm* before deposition and the form of the latter. (Smaller, where appropriate pilot) plants with circular-disk-shaped condensers possess a concentric orifice in the vacuum chamber (51) for leading through the corresponding hollow shaft (54). By contrast, for the batch mode, the vacuum-tight guide rail, not shown in any more detail here, in which the coolant supply conduits rotate. Alternatively, the entire coolant distribution system, including (12a), (13b), (13c), (13d) and (13i), is accomodated in a vacuum chamber (13o) which, on the one hand, necessitates an enlargement of the total vacuum chamber volume and, on the other hand, dispenses with the guide rail. Furthermore, the two solutions are combined in such a way that the vacuum chamber system in the deposition level is composed of a plurality of vacuum chambers and a multiple chamber system with partial vacuums changing in steps is obtained: 1) the vapor deposition region (21) (side view (31)), which is separated by the (if appropriate, movable) partition (17) from 2) the region of in situ consolidation (21a) and by (is appropriate, movable) separating segments (33) from 3) the chamber lower part (34), and 4) the vacuum chamber (13o) which receives the coolant routing with as low a chamber height as possible and, at the same time, either connects the lower parts (34) or is additionally separated from them.

[0403] The great advantage of this condenser batch mode is the constant lateral speed v_Conof the deposition surface in comparison with the sharply varying surface speeds ω_Conof a circular condenser. This results in constant h_eff(F₀) values, wider Δh_effranges for αA=α_T=1 and correspondingly better controllable conveying and deposition capacities Q(x) and Q(A) (see above). However, by means of the following alternatives for Diaphragm* structural parts, high vapor deposition efficiency is possible even for circular condensers and condensers having randomly differing surface speeds. The diaphragm structural parts for controlling the conveying capacity are an elementary precondition of the deposition capacity, finely adjusted, inter alia, by means of v_Conand ω_Con, and of the pressure gradients maintained by said deposition capacity as well as of the continuous operation of the abovementioned process, said continuous operation being made possible by the controlled deposition capacity. The abovementioned vapor deposition process therefore resembles the “melt-extraction” process and its further-developed variant most recently derived from it, namely the “melt overflow” process. FIG. 16 shows the principle of the “melt-overflow” process: whilst the propulsion force for the productivity of the “melt-overflow” process is proportional to the quantity of the melt supplied to the melt crucible (ST) and is acquired via the head and consequently via the head pressure of the melt at the overflow (gap), the rotational speed of the (if appropriate) cooled drum determines the quality features of the resulting band and/or foil, such as the thickness, the resulting structure and the properties. In the abovementioned process, the ratios are true to the maxim that vapor deposition represents a reversed event in the series of possible processing technologies. In an exact reversal: the speed of the condensers, the resulting accommodation coefficient and the vacuum=suction of the vacuum chamber of the condensation level determine the rate for the yield and therefore productivity of a conveying capacity Q controlled by a Diaphragm*. W=wheel; M=melt; F=filament.

[0404] In “melt extraction”, by means of a roller (drum), if appropriate notched, which travels over the melt surface, this melt layers are “drawn” onto the drum surface and corresponding, sometimes very wide-band films are produced by subsequent rapid solidification (cf. R. E. Maringer and C. E. Molby, J. Vac. Sci. Technol. 11, 1974, pp. 10671071, U.S. Pat. Nos. 3,522,836 (1970) and 3,605,852 (1971). The “melt overflow” process is a further development of “melt extraction”, the propulsion force for film production was still purely the rotational speed of the drum, in the “melt overflow” process the rotational speed determines essentially the quality of the resulting films, whilst the propulsion force for film production is supplied by the follow-up of the melt and the resulting height/level of the melt surface.

[0405] In a similar way, in the abovementioned vapor deposition process, the condenser allows a kind of “vapor extraction” from the mixing chamber or the (last) vapor chamber, the difference being that the PD controls the conveying capacity and, in interaction with the state of the surface of the deposited blank (speed, roughness, temperature, etc.), the accomodation coefficient and the resulting deposition capacity. Contrary to the follow-up and consequently the height pressure of the melt, the vacuum chamber, dependent on the pumping speed, now ensures the propulsion force for the material conveyance (not the speed, etc. of the substrate surface, although it is, of course, achieved indirectly via the resulting accomodation coefficient), whilst the state of the substrate surface, including its speed, allows the quality of the deposited product and a continuous layer buildup which makes (pre)compacting (of corresponding “flakes” of thin films, etc. chopped small, and produced from the melt) unnecessary in further processing. At the same time, the meander shape of the at least one internal cooling duct incorporated in the condenser ensures the efficient utilization of a given cooling capacity per unit of a deposition surface of a given cooling system as well as a homogenous metastable material-structure and/or phase profile in the y-/z-transition of the deposited blank (see FIG. 17 showing principle of the increase in efficiency of the cooling capacity of a given “plank” condenser surface in the case of a given cooling system with a given cooling medium: a) 1 meander duct, b) 2 meander ducts and c) 3 meander ducts, i.e. 1 times type “a” and 2 times type “b”; arrows: alternatives for the direction of the coolant flow).

[0406] The suction flow as the characterizing propulsion force for the entire material conveyance in the above-mentioned process is the basis for its versatile applicability, including the recycling of structural materials via the vapor phase (distilation) such as magnesium and/or Al—Li alloys and, in particular, those alloys which are produced by means of this process itself (cf. PCT Application PCT/EP/02882 of Jul. 19, 1995). Whereas, in conventional vapor deposition processes, material conveyance is driven by the pressure flow which leads locally to overpressures and therefore to locally more frequent collisions of the elementary particles in the vapor phase, in comparison with the average value of a corresponding vacuum chamber, and consequently to an increased risk of condensation, the suction flow ensures the opposite: local, regional and controllable underpressures and optimum control of the process-specific condensation risks. Whereas, in the vapor deposition process driven by pressures flow, the element having the lowest (saturation) vapor pressure is speed-determining for productivity and the rest (depreciation, attractiveness, etc.), in the abovementioned process these factors are dependent primarily on the operative accomodation coefficients α_T(α_A) and their process-specific control and depend only indirectly, via the vapor conveying capacity, on the saturation vapor pressure of the composition involved, hence being primarily a question of the functioning capacity of Diaphragms*. The functioning capacity of the Diaphragms* then also governs the control of the influence of pump-specific irregularities, such as underpressure oscillations, caused by the pumping frequency. The abovementioned process provides, for the first time, a vapor deposition process which is coherent in its functioning as a whole.

[0407] The process claimed in EP Application 94111991.9 and broadened here contains, where appropriate, at least one vacuum chamber with a mixing region for the chemical (i.e. via partial vapor pressure) and physical (density) equalization of the at least one component in the vapor flow, which component, due to the basic forms of construction claimed for the necessary porous Diaphragms*, ensures not only operationally friendly, but also accurate control of the concentration of the vapor being deposited, from the point of view of the relatively high specific deposition rates at high deposition temperatures of at least one of the components (such as, for example, of magnesium) and widely differing evaporation pressures and/or evaporation temperatures of the components. This aspect ensures extremely high homogeneity (i.e. inhomogeneities<0.2% by weight per mm²for simple alloys, but at least<1% by weight per mm²even for very complex alloys) and is highly relevant particularly with regard to the resulting mechanical properties, since these are highly concentration dependent and the users demand (where appropriate, accurate) specifications. This SECOND PART of the invention therefore relates to further options for optimizing the control of concentration and therefore the resulting chemical homogeneity (distribution of the alloy constituents) and physical homogeneity (distribution of the resulting phases and lattice defects) in the product.

[0408] The Diaphragm* claimed in EP Application 94111991.9 consists of bifurcations, geometric elements having high and low resistance coefficients c_F(german: c_W) at specific locations, of flow series resistances with and without a transdiaphragm differential volume, which occur as a result of flow branches (and bifurcations), and of apertures. Furthermore, combinations of diffusers and nozzles in front of bifurcations as claimed. In the following part, these Diaphragm* elements are further specified and new Diaphragm* elements are added, adapting the porous diaphragm technology of the abovementioned vapor deposition process to the variety of combinations of the components which are alloyed with one another and/or intermixed via the vapor phase. The question which must first be addressed is: “How operationally friendly and maintenance-friendly is the functioning of the process?” (cf. EP Application 94111991.9 and FIRST PART of the invention). The functions of the porous diaphragm Diaphragm* (PD) include:

[0409] 1. Reservoir formation

[0410] 2. Local change of state (in particular, PD type 1) for the purpose of controlling the macroscopic change of state within the gas phase between the plant units.

[0411] 3. High conveying flow in light of 1. and 2. It becomes evident, precisely here, that a flow resistance offers no solution, since, although allowing high conveying flows, possibly even reservoir formation, it does not permit local changes of state dT/dx, dp/dx and/or dV/dx, particularly with regard to controlled deposition capacities (see above).

[0412] 4. Co-control of vapor deposition, with refernce to 1. to 3., i.e. local changes of state for the purpose of controlling the macroscopic change of state, including change of assembly (in particular, PD type 2), and at the same time interaction between the conveying capacity and lateral speed of the collector system.

[0413] The fact that active T/p control and resulting process control are taken over by the PD diaphragm creates a dynamic equilibrium which is dictated, on the one hand, by Boyle's law conditions and, on the other hand, by the required vapor deposition productivity. Without active T/p control by the PD, either only a high conveying capacity without local T/p control is possible, or vice versa. In the case of a vapor deposition process with controlled synthesis, i.e. alloying in the vapor phase, however, optimization of the evaporation rate of the speed-determining component or components (e.g. with a drag effect; see chapter 10, point (vi) in FIRST PART and chapter 2 in SECOND PART of the invention) is secondary, as long as the solution for diaphragm technology controlling the suction flow does not ensure sufficiently maintenance-friendly and operationally friendly as well as reliable control of retentivity (reservoir formation) and transdiaphragm change of state, i.e. F_D.

[0414] Control of Reservoir Formation and Transdiaphragm State Gradient

[0415] According to the principle of momentum, the change in the flow pulse I=m*v (m=flow mass, v=flow speed) in the flow duct (with index 0) is equal to the force acting from outside, i.e.

[0416] F₀=dI₀/dt=d(m₀v₀)/dt  (35)

[0417] and taking into account the conventional flow resistance for flowing media this yields:

[0418] ΣF₀=F_P−F_F=(dq_m,0) (₂−₁)_m,T=(dm₀/dt) (₂−₁)_m,T

[0419] =(d(q_v,0ρ₀)/dt)(₂−₁)_m,T=(d(A₀v₀ρ₀)/dt)(₂−₁)_m,T  (36)

[0420] i.e. only the difference in the speed of the medium flowing in (e.g. at position 1) and of the medium flowing out (e.g. at position 2) is important for the environment outside the corresponding flow resistance. Near the flow resistance, the mass m₁and temperature T₁and, in a first approximation, also the density ρ₁(n.b. the compressibility of a gas in the flow duct does not signify any restriction of the following statements) of the conveying flow q flowing in per unit time in a conventional flow resistance are identical (i.e. constant) to the mass m₂, temperature T₂and density ρ₂of the medium flowing out of the flow resistance per unit of time. Consequently, the stationary flow state in a flow resistance is dictated by (i) the local flow cross section A₀and (ii) the (local) surface quality and (iii) the (local) form of the flow resistance. In the stationary flow state, the sum ΣF₀of the forces operative in the flow state, the sum ΣF₀of the forces operative in the flow resistance, i.e. F_P=fn(A) and F_F=fn(ii and iii) is not only a vector sum of the amount of the difference in pulse forces on exit (e.g. at speed v2) and on entry (e.g. at speed v₁) in a specific region of a throughflow cross section A₀, i.e. A₀(p₂−p₁), but they also presuppose one another, i.e. F_pand F_Fare defined by themselves and, if appropriate, also cancel each other out again.

[0421] By contrast, with the porous diaphragm Diaphragm*, the transdiaphragm flow pulse is operationalized and the relation between F_pand F_Funcoupled in plant terms by the force F_Dat the porous diaphragm. In contrast to the conventional flow resistance, transdiaphragm material conveyance in the Diaphragm*-controlled vapor deposition process is associated not only with a change in the transdiaphragm flow speed v, but, if appropriate, also with a variation in the transdiaphragm flow temperature T and/or a reduction in the transdiaphragm conveying mass m and/or the density ρ of the transdiaphragm vapor flow from one plant unit to the next of the vapor deposition process. According to EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 F_Dis composed of:

[0422] F_D=F_P−F_F  (37)

[0423] i.e. the difference between F_P(that is to say, the external (pressure) forces which act on the flowing gas or the flowing vapor) and the conventional (internal) flow resistance, F_F, although (apart from exceptions, i.e. for F_D<F_Sand F_D=approx. F_S; see chapter 10, point (vi) in FIRST PART and chapter 2 in SECOND PART of the invention) F_D>F_Fis preferred. F_Fconsists of the flow resistance which occurs as a result of (external) friction between the flow and the surface or surfaces of the transdiaphragm pipe inner wall and due to turbulences and the resulting hydrodynamic pressure losses (corresponding to the hydrostatic pressure increases).

[0424] By contrast, F_Dincreases the pressure gradient, without increasing F_F, and is therefore the difference between F_Pand F_F. For a given F_P, F_Drises in the mass in proportion as F_Ffalls, and vice versa. In order to increase the specific coneying capacity Q(S), (i.e. Q_v(S) and Q_m(S), see below), therefore, the transdiaphragm loss figures z of the porous diaphragm Diaphragm* are minimized. Thus, the friction between the flow and flow duct inner wall under the conditions of a laminar gas flow through the Diaphragm* can be ignored in the first approximation (cf. EP Application 94111991.9). Consequently, F_Dalso contains those fractions which, without the measures for the buildup of F_D(cf. chapter on bifurcations), would necessarily increase F_Fonly (e.g. transdiaphragm bends, transdiaphragm (not directly at the outlet!) flow duct constractions etc.).

[0425] Def.→: In contrast to the frictional resistances F_Fof the conventional flow resistance, the force of the Diaphragm* F_Dis an additional force for building up retentivity with a resulting vapor reservoir in an (e.g. conventional) evaporation chamber, without frictional losses and without causing material separation, said force being used, inter alia, for assisting and/or controlling the resulting macroscopic state gradient over the corresponding interface during transdiaphragm material conveyance (also depending on the reservoir state) (cf. EP Application 94111991.9), including controlled vapor deposition.

[0426] The vapor reservoir is in a state of communication with other reservoirs, said state being imparted by the pumping speed via the vacuum, the vapor discharged by the porous diaphragm being expanded and/or accelerated in comparison with the vapor flowing into the same porous diaphragm. F_Palso includes a pressure gradient dp/dx brought about by the suction force, i.e. F_P=fn (dp/dx), and the resulting suction force at the suction force at the flow outlet of the respective flow duct and all local propulsion force changes during transdiaphragm material conveyance (i.e. F_P=fn (F_Suction) in which F_Suction=fn (dp/dx); n.b. local propulsion force changes in the flow duct from pressure to suction are particularly important for the design of the physical transport reactors (see chapter 10, point (vi) in FIRST PART and chapter 2 in SECOND PART of the invention).

[0427] The stationary flow state in the porous diaphragm Diaphragm* has superposed on it, where appropriate, a non-stationary flow state

[0428] δq_v/δt=δq_vδx*δx/δt  (38)

[0429] (n.b. q_v=conveying flow) which is induced by F_D. Thus, the use, for example, of transdiaphragm bifurcations leads to a permanent difference between the conveying flow q_vflowing into the porous diaphragm from one chamber and the conveying flow q′_vflowing out into the following chamber. The circular flow results in a nonstationary flow state especially when the vapor flow is heated during transdiaphragm passage, before being separated via a bifurcation.

[0430] Furthermore, the speed variation of the diaphragm flows, which is induced by a variation or variations of T, m and/or ρ, also contains a nonstationary fraction as a result of the interaction of unstable flow states which occur in bent flow and/or bifurcation regions as a consequence of directed flow routings and which are comparable to the oscillations during growth on a dendrite tip. These include the breakaway and transition of unstable vortices into the stable flow and the breakaway and transition of unstable flow boundary layers into stable vortex zones (dead flows). To explain: in the present vapor deposition process a distinction is made between turbulent flow (e.g. with a logarithmic or exponential transverse flow profile, the size of the (micro) turbulences being<<the flow duct diameter d_zor (for a bend)<<d_k) and turbulences (including vortex streets) and (turbulent) dead flows, the dimensions of which are in order of magnitude in the range of d_z. The resulting local variations in the transdiaphragm flow speeds are superposed and, where appropriate, dominate a change of state in the case of a flow through a comparable conventional flow resistance and, consequently, also isolated plant measures in and on a (transdiaphragm) flow duct according to (i)-(iii) (see above).

[0431] The transdiaphragm T-, m- and/or ρ-variations of the (transdiaphragm) flow which are achieved by the above-mentioned invention control the transdiaphragm changes of state, including the speed, conveying flow and/or mass flow, and their stationary and nonstationary variations, whereas, isolated measures under conventional conditions according to (i)-(iii) afford no significant advantage for the vapor deposition process. The quasi-nonstationary permanent state of the transdiaphragm T- and/or m- and/or p-variations becomes an operating state set by the product. Nonstationary states deliberately taken into account are restricted to fully intermixed vapors, i.e. to porous diaphragms for controlling the conveying flow of the alloy components and the conveying flow for the vapor deposition of pure components, whilst, in the case of porous diaphragms for controlling the main components of alloys, said states are as far as possibly eliminated.

[0432] Control Variables for Controlling the Transdiaphragm Flow Pulse

[0433] 1. Surface Quality (Roughness Δ)

[0434] A given plant design for the abovementioned vapor deposition process controlled by a porous diaphragm, with (product-) predetermined requirements based on the transdiaphragm state gradients (dp/dx, dT/dx by the correponding components) and on reservoir formation (F_D, e.g. by concentration and conveying flow) makes it necessary, for several reasons, to have a (locally) high transdiaphragm flow speed v₀, including:

[0435] 1. maximization of the (overall) conveying flow q_v(or q_m, which is proportional to the Re number Re=v₀* D_H/ν, see below) in the case of limitations placed by the requirements of dp/dx, dT/dx and F_Don the maximum hydraulic diameter on entry into the porous diaphragm, i.e. D_H,I(max) of the corresponding transdiaphragm flow ducts.

[0436] 2. optimization of the transdiaphragm (i.e. regional) heat transfer (i.e. of the Nusselt number, cf. next chapter) from the superheated porous diaphragm to the relatively “cold” vapor flow before entry into he mixing chamber.

[0437] 3. Maximization of the pressure ratio between the flow on entry into the porous diaphragm, p_I, and the vapor pressure in the corresponding evaporation unit, p_int, when bifurcations are used for building up a bifurcation backflow with p_Bon return entry into the corresponding chamber, so that

[0438] P_I>P_B>P_int  (39),

[0439] i.e. maximization of the local pulse at bifurcations (cf. next chpater but one).

[0440] 4. maximization of the (regional) yield during deposition (i.e. undisturbed deposition over a controlled distance downstream of the last Diaphragm* as far as the condensation surface, i.e. minimization of the deposition losses and of contamination of the deposition chamber and of the pump system, including the load on, if appropriate, preceding gas scrubbers, vapor depositors, cyclones, etc. (see further below)).

[0441] For the efficient stepup of a given pumping capacity of a given pumping system to transdiaphragm flow speed, therefore, a minimization of the frictional losses between the transdiaphragm flow and transdiaphragm flow routings (and/or walls, including nonbent and bent flow ducts, tubes, pores, heat exchangers, diffusers, nozzles, (separating and converging) bifurcations, bends, valves, etc.) is indispensable. The effective loss figure per unit length of a nonbent flow duct, λ_eff, is, for Re numbers<2000, dependent only on the Re number (cf. FIG. 18). FIG. 18 shows loss figures due to friction in the nonbent flow duct, λ, with (top) homogeneous and (bottom) heterogeneous surface roughness Δ as a function of the Re number. For Re>2000 (in the case of a homogeneous roughness approximately in the region of Re>4000), λ_effis also dependent on the relative roughness

[0442] Δ=Δ/D_H  (40)

[0443] and consequently on the mean height of an individual unevenness, Δ, and the hydraulic diameter D_H, in which equation, for example,

[0444] for the circular cross section D_H=D₀

[0445] for the rectangular cross section D_H=2 (a₀*b₀/a₀+b₀))

[0446] for the annular cross section D_H=D_ext−D_int

[0447] and for an arbitrary cross section D_H=4*A₀/U

[0448] with D₀=diameter, a₀=height and b₀=width and D_ext=external diameter and D_int=internal diameter and A₀=flow cross section area and U=circumference of the respective flow duct. Above an Re number range of

[0449] Re>560*Δ/D_H  (41)

[0450] (in the case of a homogeneous roughness of Re>D_H*(217.6−382.2 log (Δ/D_H))/Δ), λ_effis dependent only on the relative roughness Δ. On account of the limitation in D_H, i.e. for given D_H,I(max), Re is also limited toward higher values and Δ toward lower values by the absolute value Δ. It therefore goes without saying that, for high conveying flows, etc., not only high transdiaphragm flow speeds are indispensable, but also Δ values which are as low as possible. A basic precondition for transdiaphragm material conveyance in the case of high Re numbers is therefore a smooth (as possible) pipe inner wall or many (as many as possible) smooth pipe inner regions.

[0451] Technical Solutions (in connection with the abovementioned process)

[0452] The methods for achieving a very smooth but at least controlled surface (surface quality) of transdiaphragm duct inner walls, i.e. with Δ values which are as low as possible, include

[0453] 1. polishing of the (core) materials (e.g. steels, superalloys, intermetallics, etc.) and of the (e.g. refractory) covering layers, the inner wall roughnesses of metallic flow ducts, including those with a (refractory (metal) or ceramic, etc.) protective layer against abrasion, corrosion, etc., being, specifically during commissioning, preferably in the range of 0.1-10 μm, but at most not above a range of 5 μm<Δ<300 μm, and/or

[0454] 2. protection against moisture and corrosion outside operation, which is achieved, where appropriate, by sealing the plant under a vacuum and/or protective gas (N₂, Ar, etc.), a very smooth surface of the pipe wall being very important particularly in the region of the bifurcations (i.e. part flow quantity branches, cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) for pulse preservation during backflow via bifurcation backflow ducts (see above) and/or for Diaphragms* upstream of the deposition level (type 2 of the Diaphragms*, see PART ONE of the invention), including the geometric elements for flow routing at corresponding flow outlets and/or at series resistances, with or without a transdiaphragm vapor reservoir, and the number of welds, beads, sealing joints, etc. being minimized particularly in these regions and also, in general, in the transdiaphragm flow ducts, and/or

[0455] 3. the use of diaphragm materials made from (unpolished) ceramics, stone, concrete, cement, wood, etc. and/or corresponding (unpolished) layers, the corresponding Δ values at commissioning being preferably in the range of 0.001-0.8 mm, but at most not above a range of 0.3<Δ<9.5 mm, and the relatively rough diaphragm walls being used, irrespective of the diaphragm material, in regions in which a high flow resistance and/or boundary layers with high heat exchange are required locally, for example for producing high transdiaphragm dT/dx gradients (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995):

[0456] a) In the case of geometric elements at a mean distance “h” before inflow into the Diaphragm* for the maximization of intermixing operations and/or local turbulences.

[0457] b) Diaphragms of type 1, i.e. in the region of transdiaphragm, (i.e. partial (vapor) reservoir formation in the Diaphragm* itself, and/or in the case of the local use of heat exchangers in which a turbulent flow is preferred (cf. nect chapter). Turbulent flow occurs from v>v_lim, v_limbeing in the case of heterogeneous roughness (at ν=η/ρ, cf. equation (94)):

[0458] v_lim=26.9*ν/Δ  (42),

[0459] and Δ being locally an important design variable for increasing the Nu number. The most important difference between the geometric elements and the flow ducts and/or flow duct constituents is that the flow flows round the geometric elements, whereas it flows through the latter. Intended turbulences (e.g. upstream of the flow inlet and supprssion of the turbulences, inter alia, at the flow outlet) are therefore dependent primarily on further details of the porous diaphragm (cf. next chapter).

[0460] 2. Transdiaphragm Flow Ducts with (i) Heat Exchangers and (ii) D_HWidenings (diffusers) and/or (iii) Transdiaphragm Plasma Guns

[0461] In comparison with conventional vapor deposition processes, the stepped vacuum chamber system of the above-mentioned vapor deposition process achieves a global (macroscopic) orientation of all the vapor trajectories in the direction of the deposition level, irrespective of the extent to which deflection of the global flow (global trajectories) occurs (regionally) in individual sections of the process, for example as a result of crucibles, baffle plates in the mixing chamber, etc. Furthermore, trumpet-like and/or diffuser (-like) and/or Laval nozzle (-like) flow duct outlets, including geometrical elements having low resistance coefficients, just before deposition minimize the turbulent fractions in the boundary layer and consequently the frictional losses, in order to exercise better control over the pulse of the vapor flow over the distance to the moved vapor deposition level (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995). In both instances, more efficient vapor deposition is carried out by control over the macroscopic and microscopic movement of the vapor atoms and/or molecules, in comparison with a movement which is achieved in a conventional vapor deposition process, i.e. in a chamber system without (transdiaphragm) pressure gradients controlled by a porous diaphragm.

[0462] To (i) by contrast, for heating large conveying quantities at a high flow speed over as short a distance as possible before entry into the “hot zone”=mixing chamber, a molecular flow, i.e. a turbulent boundary layer with

[0463] v=(3 kT/m)^0.5=(3 RT/M)^0.5

[0464] (n.b. m=molecular weight, M=molar weight) is advantageous (cf. FIG. 19 showing theoretical Stanton number St=Nu/(Re*Pr) of a gas as a function of the Re number and the Mach number, derived from the locally effective heat transfer coefficient h), in practise v_effseldom exceeding one third of the theoretical value. Frictional losses due to molecular boundary layer movements and/or flows are, (within certain limits), a contribution to a more efficient heating and, in comparison with a homogeneous surface quality, can be induced by a) heterogeneous roughness of equal quality, b) greater absolute roughness and c) a reduced inflow cross section D_H,1(cf. preceding chapter). Furthermore, for a given speed and roughness, heating by d) the amount of contact area between heat exchanger and flow increases.

[0465] To heat a gas or vapor during transition from the evaporation chamber at temperature T₁into an evaporation chamber at temperature T₁into an evaporation or mixing chamber at T₂, where T₂>T₁, if appropriate T₂>>T₁, therefore, a superheated fine-mesh lattice is inserted into the flow duct, the mesh size being selected in such a way that the pumping speed per unit area of the mesh cross section, i.e. S/A with

[0466] A=q/v=q*(M/3 RT)^0.5,

[0467] does not exceed a value of 10 l/(cm²*sec) and is preferably in the range of 0.01 to 5 l/(cm²*sec). Compact heat exchange surfaces are achieved by means of thin platelets which are arranged in a honeycomb-like manner and/or are nested crosswise one in the other and through which the gas or vapor flows in parallel during transdiaphragm material conveyance.

[0468] FIG. 23 shows flow ducts with heat exchanger, a) cross section with a honeycomb, and latticed arrangement of the transduct heating ribs and b), c) longitudinal section with b) discontinuous (step-shaped or staircase-like, α=approx. 80°) and c)continuous duct widening (diffuser) and α=10° and (on the left) equidistant widening of the ribs and (on the right) proportional increase in the number of heating ribs as indicated by the numbers in FIG. 23.

[0469] To (ii) with increasing heating, the flow speed and the heat transfer to the gas/vapor rise, until the increase in the Nusselt number enters a saturation curve Nu=fn (Re^1/Y*Pr^1/X) in which Pr=Prandt1 number and Y>1 and X>Y (cf. FIG. 20, showing free and forced convection in vertical tubes). Heat transfer with a further increase in the turbulent flow (i.e. speed) becomes inefficient here. This saturation is attained, where appropriate, before reaching the target temperature of the transdiaphragm vapor/gas flow which is required in order to discharge large conveying flows into the mixing chamber, since, where appropriate, achieving very high dT/dx gradients and an increase in the contact area by a further reduction in size of the lattice meshes of the heat exchanger would entail loss figures λeff which are too high. Instead of a lengthening of the flow duct having an equal cross section (or D_H), the widening of the flow duct first ensures a (local) slowing of the flow speed and an increase in the dNu/dRe gradient, but local repetition of transdiaphragm heat transfer and acceleration at increased temperature and with increased heat exchange surfaces subsequently ensures more efficient heat transfer to the gas flow. This increase in efficiency is carried out discontinuously cf. (diffuser staircase in “Technical Solutions”) or continuously.

[0470] Since, in the range of high flow speeds and Re numbers (i.e. in regime III, cf. FIG. 18), for a given surface quality Δ and for Re=const. the loss figure λ is lowered only by enlarging D_Hand the pressure losses amount to

[0471] F_F,0=fn(λ*l*v₀²/D_H)=fn(Δ*l*v₀²/D_H²)  (43),

[0472] with a progressive (i.e. stepped and/or continuous) widening of the transdiaphragm flow duct the stepped vacuum chamber system of the abovementioned vapor deposition plant, guaranteed by a given pump system, is, moreover, utilized more efficiently. For, without a widening of the transdiaphragm flow duct, the flow speed increase achieved by heating leads, under given vacuum conditions, only to a reduction in the effective flow speed at the inlet of the transdiaphragm flow ducts with D_H,I(max) and consequently to a limitation of the conveying flow, in spite of high exit speeds from a corresponding porous diaphragm which exit speeds from corresponding porous diaphragm which, however, are not required on entry into the mixing chamber.

[0473] FIG. 21 is a diagrammatic representation of heat transfer (Nu) and heat transfer efficiency (Nu/S) as a function of Reynold nimber in a porous diaphragm for the control of a vapor deposition process. Nu=Nusselt number, S=vacuum-controlling pump speed of any pump system. FIG. 21 shows qualitatively that the efficiency curve Nu/S falls again above a critical flow speed, although the heat transfer Nu=fn (Re^1/Y) rises further. Consequently, due to the reduction in gas density ρ, achieved by heating, and to the increase in the flow speed v (as a result of pulse preservation), it is expedient, in the case of large conveying flows, to use diffusers and/or diffuser-like flow ducts for transdiaphragm heating. In addition to the compromise between rapid heating and reduced pressure losses of transdiaphragm flow at high flow speeds, a widening of the transdiaphragm flow duct cross section (i.e. D_Hvia diffusers and/or cross section (i.e. D_Hvia diffusers and/or diffuser-like flow ducts) increases the suction effect (cf. state equations (49) through (55)) on account of the enlargement of the outflow area (in the case of given gradients dp/dx). Furthermore, widening the transdiaphragm flow duct cross section reduces the risk of compression shocks (at Mach numbers≧1) or the risks which stem from them. Widening of the transdiaphragm flow duct cross section is therefore a further step for optimizing the transdiaphragm heating of large conveying flows.

[0474] To (iii) an alternative “short cut” solution is the plasma heating of the transdiaphragm metal vapor flow which, as a rule, is employed for vacuum plasma spraying (VPS) with the use of an inert gas mixture (e.g. Ar plus H₂) (cf. FIG. 22 which shows diagrams of the cross section of two plasma guns with (top) a diffuser outlet and (bottom) a Laval nozzle outlet for the resulting ultrasonic plasma jet; WK=water cooling; PFT=powder feed tube (i.e. laval nozzle with integrated powder injection orifices); PS=(supersonic) gas jet; T=throat; AC=arc chamber; K=cathode; A=anode; HSB=high current arc; HG=heated gas; CG=plasma gas; PIO=plasma jet; S=layer; SU=substrate). The established VPS process is suitable only for depositing liquid phases, since, despite the relatively high temperatures in the plasma (up to 10000K), the time for evaporating the solids added in powder form is not, as a rule, sufficient for their evaporation in the plasma jet. The transdiaphragm plasma gun is therefore reserved for the admixing of at least one HT component directly before deposition in a separate technical solution, in which the plasma jet, by virtue of its high speed, generates a vacuum over the surface of an evaporation source which is arranged in the manner of a water jet pump (FIG. 23). In that case, however, vapor conveyance is no longer driven by a suction flow, but is driven by the pressures generated by the plasma gun and is characterized by a controlled transdiaphragm change in concentration as a result of the alloying addition of an HT component of the transition metals, such as Ti or Ta. By contrast, a more simple configuration is made possible by the transdiaphragm plasma shock for the purpose of local heating of the components having higher vapor pressures, such as Mg and/or Al and/or rare-earth and alcaline-earth metal vapors/vapor mixtures, e.g. before inlet into a mixing chamber upstream of the deposition chamber level. In this case, the entire process is driven by suction flow and only materials conveyance operated by transdiaphragm plasma shock is “regional”, that is to say locally “pressure”-operated for the relevant evaporation chamber.

[0475] In all three cases, the state equation of the transdiaphragm vapor state emerges as follows:

[0476] Differential Equation for Stationary Material Conveyance with Transdiaphragm Heat Transfer

[0477] According to equation (11), the variation in the pulse of a flowing medium is

[0478] ΣF₀=(δI₀/δt)=mδv/δt+vδm/δt  (44)

[0479] In all nonbranched flow ducts, including a diffuser or a flow duct with a diffuser, δm=0 and the second term on the right-hand side in equation (44) drops out. Logically, nonbranched flow ducts play a subordinate part in a pulse increase within the PD before deposition in the process operated by suction flow. The differential equation for transdiaphragm material conveyance with heat transfer and with a mass flow qm as a dependent variable is governed by the initial conditions for the flow speed:

[0480] v=q_m/A*ρ  (45)

[0481] and

[0482] v=δx/δt  (46)

[0483] in which q_m=dm/dt, i.e. the mass flow (e.g. in [kg/s]). To derive the state equation of a vapor flow in the heated flow flow duct having a varying flow cross section, the first term on the right-hand side of the differential equation (44) yields:

[0484] mδv/δt=m*δv/δx*δx/δt=m[(q_m/A*ρ)/δx]v

[0485] =m[(1/A*ρ)*(δq_m/ρx)−(q_m/ρ*A²)*(δA/δx)−(q_m/ρ²*A)*(δρ/δx)]v  (47)

[0486] With m=ρ*V and v=A*Δx after substitution with equation (44) from equation (47), the following is obtained:

[0487] mδv/δt=[(q_m/A*ρ)*(δq_m/δx)−(q_m²/ρ*A²)*(δA/δx)−(q_m²/ρ²*A)*(δρ/δx)]*Δx  (48)

[0488] The corresponding operative forces result from the difference between the forces which act on the inflowing vapor quantity, minus the forces which act on the outflowing vapor quantity, i.e.

[0489] ΣF₀=−(F_x+Δx−F_x)  (49)

[0490] With F=p*A, the left-hand side of equations (44) and (49) becomes: $\begin{array}{cc}\begin{array}{c}\sum F_0=-\left(P_{x+\Delta X}*A_{x+\Delta x}-P_x*A_x\right)\\ =-\left(P_x+\left(\delta P/\delta x\right)*\Delta x\right)*\left(A_x+\left(\delta A/\delta x\right)*\Delta x\right)+P_x*A_x\end{array}& \left(50\right)\end{array}$

[0491] Since Δx²being very small, the term (δPdA/δ²x)*Δx²is ignored, and, finally, the following is obtained for the left-hand side of the state equation:

[0492] ΣF₀=−(A*δP/δx+P*δA/δx)Δx  (51)

[0493] The differential equation for the vapor or gas flow in the stationary state in a superheated flow duct having varying cross sections therefore reads: $\begin{array}{cc}\begin{array}{c}-\left(P*\delta A/\delta x+A*\delta P/\delta x\right)=\left(q_m/A*\rho \right)*\left(\delta q_m/\delta x\right)-\\ \left(q_m^2/\rho *A^2\right)*\left(\delta A/\delta x\right)-\\ \left(q_m^2/{\rho }^2*A\right)*\left(\mathrm{\delta \rho }/\delta x\right)\\ =\left(q_m/A*\rho \right)[\left(\delta q_m/\delta x\right)-\\ +\left(q_m/\rho \right)*\left(\mathrm{\delta \rho }/\delta x\right)]]\end{array}& \left(52\right)\end{array}$

[0494] Whilst, for an unheated flow duct without a variation in cross section (e.g. cylinder), the following applies to the pulse:

[0495] ΣF₀=F_P−F_F=_xin∫^xout[q_m/A*ρ)*(δq_m/δx)]dx  (53)

[0496] in the abovementioned Diaphragm*:

[0497] ΣF₀=F_P−F_F−F_D=_xin∫^xout[(q_m/A*ρ)*(δQ_m/δx)−(q_m²/ρ*A²)*(δA/δx)−(q_m²/ρ²*A)*(δρ/δx)]dx  (54)

[0498] The contribution to the transdiaphragm change in state of the flow in the flow duct of the abovementioned porous diaphragm (i.e. to the state adaption to the conditions of the following process unit) by (i) temperature change, resulting acceleration under heating, expansion and density reduction as well as by (ii) a widening in cross section for resulting frictional losses and increase in suction force (with simultaneous heating according to (i)) emerges from the difference between the equations (53) and (54), i.e.

[0499] F_D(A_T,ρ_T)=_xin∫^xout[(q_m²/ρ*A²)*(δA/δx)−(q_m²/ρ²*A)*(δρ/δx)]dx  (55)

[0500] In this, F_D(A_T,ρ_T) changes in proportion to the square of the vapor throughput and absolutely to the extent to which F_Fis reduced, for a given F_P, in comparison with a flow resistance having unheated flow ducts and without variations in cross section δA/δx (e.g. with cylinders or tubes having rectilinear outer walls). F_D(A_T,ρ_T) is the thermal contribution to the force of the Diaphragm* , F_D, and must be distinguished from the athermal contribution to F_Dmade by mass separation (cf. chapter on bifurcations). F_D(A_T,ρ_T) does not contain the contribution made by contractions (nozzles) in the flow duct, this being summarized further below. Transdiaphragm contractions in cross section give rise, on the one hand, to local acceleration of the transdiaphragm flow and, on the other hand, to a reduction of F_D, insofar as they do not promote a) reservoir formation, e.g. via bifurcations, and b) product formation via (acceleration=change of state and) deposition, and can consequently be better utilized locally for the purposes of the process than a concentric flow duct.

[0501] Both effects of δA/δx, i.e. widening of cross section and reduction of cross section, are required in order, on balance, to increase the force of the Diaphragm*, F_D. Moreover, intelligent combinations of structural parts and their experimental evaluation govern the extent to which a reduction of cross section −(δA/δx) overcompensates for the correspondingly reduced suction effect and can be added as a positive amount (i.e. quantitatively as an amount/−(δA/δx)/) to F_D. The premise of athermal diaphragm acceleration is: first minimize frictional losses, then accelerate, and is summarized in the (next) chapter “nozzles”. By contrast, the premise of thermal diaphragm acceleration, summarized here, consists of: first accelerate, then reduce frictional losses, but preferably both and continuously.

[0502] Technical Solutions

[0503] What is carried out here in connection with the abovementioned vapor conveyance and deposition process is:

[0504] 1. the use of flow ducts which are superheated (in relation to the temperature of the vapor flow), with and/or without heat exchangers and/or with a temperature which is constant and/or increasing in the direction of flow and/or

[0505] 2. As 1., the transduct heat exchange walls

[0506] 2.1 are oriented longitudinally relative to the flow duct and are arranged in the form of a honeycomb and/or lattice and/or grid and/or any framework in the flow cross section (FIGS. 24a,bshowing arbitrariness of cross-sectional forms/geometries of the heat exchangers and heat exchanger grids for diaphragms of type 1 (cf. 1st part of the invention), here as a model for simulation, in particular for the transdiaphragm heating of large vapor quantities, such as are required in industrial vapor deposition processes, for example for Mg alloys) and/or

[0507] 2.2 in rib form according to FIG. 24cand/or

[0508] 2.3 consist of correspondingly (arbitrarily) perforated successive plates (FIG. 24dwith grid) and/or

[0509] 2.4 form transverse-throughflow wire latticeworks, lathworks and tube assemblies according to FIG. 24e(with grid and forms of the heat exchanger bars),

[0510] 2.4.1 individual tubes, etc. assuming the cross-sectional forms illustrated in FIG. 24fand/or

[0511] 2.4.2 being inserted in regular rows or in zigzag-arranged rows in the longtitudinal section of the respective flow duct (cf. FIG. 24f) and/or

[0512] 2.4.3 being arranged in the form of a blind, i.e. at any tilt angle (FIG. 24g) and/or

[0513] 3. As 1. and/or 2., but with the use of (i) at least one locally limited diffuser, so as to result in a discontinuous widening in cross section of the flow duct and/or (ii) flow ducts with a continuous widening in cross section of the entire duct length, but at least over a substantial part of the porous diaphragm cross section dx or cos α_x*dx (α_xbeing the tilt angle of the transdiaphram flow duct) and/or part of the entire length of the transdiaphragm flow duct, along with the heat exchangers (cf. FIG. 24a):

[0514] 3.1 with constant dimensions in the at least two flow ducts separated by the at least one diffuser and having constant dimensions D₀, D_H, A₀and/or U and/or

[0515] 3.2 with a continuous widening of the (duct) dimensions within the heat exchanger itself, which continuously and/or approximately continuously fill the additional space provided by the diffuser in the flow duct and/or

[0516] 3.3 As 3.1, but with a constant or vaying contact area of the heat exchangers in the flow in the flow duct regions separated by the at least one diffuser and/or

[0517] 3.4 As 3.2, but with a constant or vaying contract area of the heat exchangers in the flow duct regions separated by the at least one diffuser and/or

[0518] 4. As 1.-3., but with the use of guide blades (guide turbines, conduit inner walls and/or conduit profiles) in front of and/or in the diffuser (in)let for the suppression of inhomogeous (in) flow speeds (FIG. 25ashowing nonhomogeneous and asymmetric profile of transverse speed distribution a) before abrupt flow duct enlargement (cf. FIG. 28e) and b) downstream of a flow bend and equalization of the inhomogeneous and asymmetric flow by c) the use of guide blades, here in the flow bend), such as occur, for example, after a bent flow duct(portion) (FIGS. 25a,b), so that a (more) homogeneous, flat (flatter), symmetrical or approximately symmetrical distribution (profile) of the flow speeds before inlet into the heat exchanger is guaranteed (cf. FIGS. 25a-c), even when the central axis of the heat exchanger, etc. forms an angle with the perpendicular to the end face of the porous diaphragm Diaphragm* and, where appropriate, necessitates the use of flow bends and/or bent flow ducts and/or

[0519] 5. As 4., but the guide blades (etc.) consist of the following types, forms and arrangements:

[0520] 5.1 profiled guide blades (FIG. 26ashowing guide blades in the flow bend: a) profiled with projected length t at the angle 48° to the inflow direction and further typical relative dimensions in the box (on the right)) and/or

[0521] 5.2 rounded (thin) guide blades corresponding to the outer walls of the bent flow duct region (FIG. 26band c showing thin guide blades in the flow bend with an arc describing an angle of b) 95° and c) 170°) and/or

[0522] 5.3 As 5.1 and 5.2, at the same time forming a bend angle δ_L=δ+/−50%, in which δ=the angle of the flow deflection without guide blades (i.e. the angle of the bent flow duct region) and/or

[0523] 5.4 As 5.1-5.3, but with identical and/or different guide blade sizes and/or guide blade lengths and/or

[0524] 5.5 Guide blades which are concentric (with the flow duct wall) (FIG. 26dshowing concentric guide blades) and/or

[0525] 5.6 As 5.1-5.5, but with a concentration of the guide blades on the inner bend of the bent flow duct, as in FIG. 26eshowing guide blades concentrated on the inner wall and/or with a corresponding reduction in the number of guide blades in comparison with a regular grid arrangement (cf. FIG. 26fvs. 26a, 26fshowing guide blades in the flow bend concentrated toward the inner wall so that there is a reduced number of guide blades for 26eand 26fin comparison with 26a) and/or

[0526] 5.7 As 5.1-5.6, but with a (maximum) number n_Lof guide blades, of which the projected length (perpendicular to δ/2, cf. FIGS. 25b, 26a) amounts to the value t₁=2^0.5, in which the number is

[0527] n_L=2.13(r/D_H)⁻¹−1=(2.13/2^0.5)*(t₁/D_H)⁻¹−1

[0528] per bend and r=inner bend and/or

[0529] 5.8 As 5.1-5.6, but with a number n_Lof guide blades in the range of

[0530] 0.8*(r/D_H)⁻¹<n_L<1.5*(r/D_H)⁻¹

[0531] and/or

[0532] 5.9 As 5.1-5.6, but with 0.15 D_H<t₁<0.6 D_Hand

[0533] n_L=(3D_H/t₁)−1

[0534] and/or

[0535] 2.1*D_H/t₁<n_L<2.1*D_H/t₁

[0536] 5.10 As 5.1-5.6, but with an enlarged bend exit in relation to the bend entrance (eg. b₁>b₀) and the number of guide blades n_Lis

[0537] n_L=2.13(S/t₁)−1

[0538] and/or

[0539] 0.8*S/t₁<n_L<1.5*S/t₁

[0540] in which S=(b₀²+b₁²)^0.5and/or

[0541] 5.11 As 5.1-5.10, the guide blades in uniform distance

[0542] a=S/(n_L+1) and/or

[0543] 5.12 As 5.1-5.11, but with a reduced number n_L(red)<n_Lin relation to the regular grid arrangement (cf. 5.11), the distances between the guide blades widening progressively relative to one another and the distance ratio a_n+1/a₁preferably being in the range 1.99<a_n+1/a1<3.01 and a, being the distance between the 1st guide blade and the inner bend of the bend and a_n+1being the distance between the following guide blade and the inner bend (cf. FIGS. 26aand 26f) and/or

[0544] 5.13 As 5.2-5.12, but thin (rounded) guide blades at 80°<δ_L=φ₁<125° (cf. FIG. 27 which is as FIG. 26a-cand 26f, here showing thin guide blades having the angle δ_L=φ₁and FIGS. 27b, 27cwith parallel inner and outer wall in the bend) and/or

[0545] 5.14 As 5.1-5.5 und 5.7-5.13, but with parallel outer walls of the bent flow duct regions and/or

[0546] 5.15 As 5.14, in which the ratio of the relative radius of the bent flow duct r/D_His:

[0547] for A₀=A₁(or b₀=b₁)→0.3<r/D_H<0.1,

[0548] for A₀<A₁(or b₀<b₁)→0.5<r/D_H<1.2,

[0549] and for A₀>A₁(or b₀>b₁)→0.1<r/D_H<0.5

[0550] and/or

[0551] 5.16 As 5.6, but preferably with 1-4 concentric guide blades which, if appropriate, are distributed over the cross section of the bent flow duct according to the relation Leitschaufeln, die ggfs.

[0552] r_i=1.26*r_i−1+0.07*b₀

[0553] in which r_iand r_i−1are the radii of curvature of the respective guide blade and b₀is the entry width of the bent flow duct and/or

[0554] 6. Flow ducts with any diffuser and/or diffusers as 3.-5., here with a circular and/or conical and/or pyramisal cross section having different and/or varying opening angles α (α/2) (cf. FIG. 28 showing methods, independent of the diffuser opening angle (ie. α), for reducing the loss figure ζ of a transdiaphragm flow duct widening), and/or diffusers with an abrupt transition (e.g. α=180°) as well as diffusers with a symmetrically and non-symmetrically flattened (i.e. 0.05<a₀/b₀angular longitudinal section and/or with guide blades and/or with partitions for reducing and/or suppressing the breakaway of the flow from the boundary layer and/or terraced diffusers (i.e. having a combination of continuous opening, followed by abrupt opening (i.e. without α=180°, cf. FIG. 28) and/or diffusers with a transition from (rect)angular to circular flow duct cross sections, and vice versa, and/or

[0555] 7. Diffusers according to point 6. of Technical Solutions in this chapter, but combined with at least one of the designs according to points 3.-5. of the Technical Solutions in this chapter and/or

[0556] 8. Flow ducts with diffuser (combinations) as 6. or 7., the global loss figure of the diffuser, with the exception of diffusers having a curvilinear and terraced longitudinal section, being composed of $\begin{array}{c}{\zeta }_{\mathrm{Diff}}^{\mathrm{global}}=k_1*{\zeta }_{\mathrm{Erw}}+{\zeta }_F\\ =k_1*k_2*\mathrm{fn}\left(\alpha \right)*\left(1-{\left(A_0/A_1\right)}^2\right)+\mathrm{fn}\left(\lambda ,\alpha ,A_0/A_1\right)\end{array}$

[0557] in which A₀=the inflow cross section and A₁=the out-flow cross section of the duffuser, α is the opening angle at 0°<α<180°, λ is as in Chapter 1, k₁=the coefficient for describing the flow boundary layer at the diffuser inlet (n.b. k₁=1.0 for homogeneous (flat) transverse speed distribution, depending, for example, on the designs according to points 4. and 5. of the Technical Solutions of this chapter, and k₁>1.0 for non-homogeneous speed distribution, for example after flow through a long pipe having a parabolic transverse profile), k₂=the form factor for the diffuser, in which k₂=approx. 3.2 for conical diffusers and k₂=approx. 4.0 for pyramidal diffusers, and, in the case of the transition from (rect)angular to circular flow ducts (and vice versa), the opening angle a becomes equal to α_E, α_Ebeing equal to the equivalent opening angle as fn(D₀,D₁,a₀,b₀, a₁,b₁and the axial length l_dof the corresponding diffuser) and/or

[0558] 9. As 8., but a (bent or nonbent) flow duct precedes the diffuser in the direction of flow, has a relative length l/DH with values in the range of 0.01<l/D_H<1000 and releases a symmetrical, but inhomogeneous and/or an asymmetric speed profile on inflow into the diffuser and/or

[0559] 10. As 9., but with it k₁=fn (v_max/v₀), in which v_max=the maximum speed and v₀=the mean speed are on inflow into the diffuser (region) and the values v_max/v₀extend over a range 1<v_max/v₀<4 and give rise to k₁values in the range 1≦/k₁/≦10 and the diffuser-outlet is provided with a flow grid/lattice for equalizing (homogenizing) the flow and/or

[0560] 11. As at least one of points 3. to 10., but with homogenization of the speed profile in the flow boundary layers, i.e. minimization of the breakaway from flow boundary layers as a result of local turbulences (cf. FIG. 29) by the selection of the opening angle α, the longitudinal axial length ld and the form of the at least one diffuser and of correspondingly adapted walls of the atleast one heat exchanger surrounded, where appropriate, by the diffuser, in which

[0561] 11.1 the opening angle is in the range of 0°<α<180° in the case of an operative Re range of 10°<Re<10⁹, but preferably between 0°<α<30° and 5*10²<Re<7*10⁶, and/or the critical cross section A_T(if appropriate=A₁), at which the boundary layer begins to break away, is determined according to the relation

[0562] A_T/A₀=1/(1−(1.95/(α^⅘*Re^0.2)))

[0563] in which A₀=inflow cross section, and/or

[0564] 11.2 the opening a is in the range 0°<α<10*[0.43*((λ/k₁)*((n₁+1)/(n₁−1)))]^{{fraction (4/9)}} but is preferably around α_opt=[0.43*((λ/k₁)*((n₁+1)/(n₁−1)))]^{{fraction (4/9)}} and n₁=A₁/A₀, and/or

[0565] 12. As 11., but with suppressed and/or limited, i.e. controlled turbulence development on the inner wall (FIG. 29 showing breakaway of the flow lines from the boundary layer of a diffuser and formation of turbulence in the divergence region with a corresponding profile of the resulting local flow speed; St=flow vortex (turbulence); AS=breakaway of the flow (line)) in the case of opening angles a in the range of 0°<α<180°, the control methods comprising:

[0566] 12.1 Locally particularly high superheating in the region of the diffuser walls for increasing speed in the boundary layer and/or

[0567] 12.2 the insertion of following heat exchangers into the region of the diffuser extit for minimizing the consequential turbulences and/or

[0568] 12.3 attracting the boundary layer by branching off small part flows in the diffuser directly into the next evaporation and/or mixing chamber (FIG. 28ashowing method for reducing the loss figure ζ of a transdiaphragm flow duct widening by suction of a flow boundary layer) and/or

[0569] 12.4 increasing the boundary layer speed and delaying its breakaway by sucking small part flows directly out of the preceding evaporation unit (FIG. 28bshowing method for reducing the loss figure ζ of a transdiaphragm flow duct widening by blowing away a flow boundary layer) and/or

[0570] 12.5 guide blades upstream and downstream of the diffuser inlet for dispersing the central flow, in particular for 90°<α<180° (cf. FIG. 28cshowing method for reducing the loss figure ζ of a transdiaphragm flow duct widening by flow deflection by guide blades directly at the inflow), the duct width preferably narrowing between the guide blade and diffuser wall in staggered regions dependent on the position of the individual guide blade, but widening locally, the guide blades being bent only slightly, if appropriate constantly relative to one another, and not exceeding a maximum projected length of 20-25° of the diffuser diameter, and having an inclination relative to the flow which allows minimum loss figures, and/or

[0571] 12.6 one to a maximum of 20 (superheated) partitions of the diffuser (cf. FIG. 28dshowing method for reducing the loss figure ζ of a transdiaphragm flow duct widening by diffuser partitions), the number of partitions increasing superproportionally toward higher angles a, the distances a₀and a₁between the partitions both at the inlet and the outlet of the diffuser assuming constant values, and the partitions before entry into and after exit from the diffuser being lengthened by a value of at least 0.1a₀and 0.1a₁parallel to the diffuser axis, and/or

[0572] 12.7 diffusers for α>20° with walls bent in the longitudinal direction, in such a way that the local pressure gradient dp/dx remains preferably constant within the diffuser, but at least the breakaway of the flow lines is reduced significantly in comparison with an angular diffuser longitudinal profile, and the continuously progressive widening of the diffuser radius y (see FIG. 28eshowing curvilinearly bent diffuser), i.e. Δy=y−y₀, can be described by the function

[0573] y=y₁/(1+((y₁/y₀)⁴−1)*x/l_d)^0.25

[0574] and, for the corresponding diffuser with flattened dimensions (i.e. a₀/b₀<1<a₀/b₀), according to the function

[0575] y=y₁/(1+((y₁/y₀)²−1)*x/l_d)^0.5

[0576] or both by a function related to the corresponding type, and/or the loss figure of the diffusers according to 12.7, with dp/dx=const. in the range of 0.1</=A₀/A₁<0.9, can be described according to

[0577] ζ=k₄(1.43−1.3*A₀/A₁)*(1−A₀/A₁)²

[0578] in which k₄is a function of the relative diffuser length l_d/D_H, and/or

[0579] 12.8 Terraced diffusors, of which the continuous widening in cross section from A₀bis A₁is concluded by an abrupt increase in cross section to A₂(cf. FIG. 28fshowing terraced diffusers), so that a breakaway occurs when the flow speed has already become relatively slow and/or the losses decrease by factors of between 1 to 3, and the coefficient k₂for terraced diffusers is in the range of 3<k₂<7, the minimum loss figures ζ_minfor A₂/A₀ratios of 1.5≦A₂/A₀≦20 in the case of relative lengths of 0.5≦l_d/D_H≦14 move in the range 0.01<ζ_min<0.5, and the global loss figure is ζ=(1+s)*ζ_min, in which σ=fn (A₀/A₁) and, for 1>A₀/A₁>0 is in the range of 0<σ<0.5, and/or the corresponding α_optvalue are in the range 0.5°<α_opt<40°, and/or preferably the raltive lengths l_d/D_H(or l_d/a₀) being significantly reduced at the expense of slightly increased ζ_minminimum values of about 1.1*ζ_min, and/or (see next page) and/or

[0580] 12.9 Flattened and/or pyramidal and/or terraced diffusers, particularly in combination with ventilators (see further below), the diffuser installed downstream of the ventilator and the ventilators being connected by means of a flow duct of constant cross section, the diffusers themselves being flattened symmetrically of nonsymmetrically and preferably having an opening angle α>25° and, in the case of nonsymmetrical flattening, the oute wall being tiltable at an angle α′₁to the side of the ventilator, this angle preferable being in the range of 0°<α′₁<10° (cf. FIG. 30 showing flattened diffusers with outer walls nonsymmetric (to the diffuser axis), following a centrifugal ventilator with a constant (out) flow duct width b₀; dimensions arbitrary), the axis of the flattened diffuser preferably having no further tilt angle relative to the axis of the ventilator, the corresponding flattened or pyramidal diffusers couple to a ventilator being characterized, where appropriate, by a flow inlet speed v_max/v₀=approx. 1.1 (cf. point 10.), and/or

[0581] 12.10 annular diffusers, if appropriate shaped into a cone, which are mounted downstream of the outlet of an axial ventilator (compressor, turbomachine), the diffusers having, if appropriate, a (flow) core which widens or tapers a flow bottleneck relative to the diffuser, before the formation of either an axial and/or a radial outflow, of which the increase in cross section in relation to the annular inflow (cf. FIG. 31 showing annular diffusers with (on the left) axial and (on the right) both axial and radial outflow using arbitrary dimensions) can be described according to the relation

[0582] A₁/A₀=2(b/h)*(D_d/D₀)/(1+d/D₀)

[0583] the solutions according to points 12.9 and 12.10 being, in particular, also relevant to those part regions of the process as a whole, the transdiaphragm material conveyance of which is driven by a pressure flow (see 12.9 and below), and/or

[0584] 12.11 at least one of the cases according to 12.1-12.10, but combined with a lattice work, wire lattice, wire-like or lattice-like netting and/or a tissue-like, netting-like and/or framework-like preheater in the diffuser (outlet), in any event before the vapor flow is conducted into the next transdiaphragm diaphragm region and/or the next plant unit (e.g. evaporation and/or mixing chamber) (cf. point 2 of the Technical Solutions of this part), and/or

[0585] 13. As at least one of the solutions according to 3. to 12., but with a number nDiff of discrete diffuser regions following succesively in series, for the formation of a “diffuser staircase” (as is illustrated in FIG. 32 which shows an alternative “diffuser staircase” with the number n_Diff.(opt) (here 4) of a flow duct having a given length l_d, widening of cross section and opening angle δ₀relative to n_Diff=1, n.b. the ratio of the dimensions is selected arbitrarily and the diffusers may optionally be separated by flow ducts with and without heat exchangers; n.b. the diameter-to-length ratio in FIG. 32 is selected arbitrarily), the number of diffusers n_Diff(opt) used per unit length of the flow duct, for a given opening angle δ₀, being optimized as regards the ratio of F_D,0/F_F,0generated specifically by the flow duct, including heat exchangers, i.e. as regards the increase of F_D,0achieved by heating and expansion, on the one hand, and as regards the increase of F_F,0minimized by limiting the flow volumes (in the case of a constant wall surface), on the other hand (i.e. several small diffusers are better than one large diffuser with an abrupt transition), and the number of diffusers per flow duct being in the range of 1<n_Diff<100, but preferably in the range of 1<n_Diff<5 and/or

[0586] 14. As 13., but with a flow duct arranged in any (i.e. non-bent and bent) plane S_3dim(r,Θ) (see point 16 of the Technical Solutions of this section) of the porous diaphragm, individual diffusers, diffuser staircases and flow duct regions and/or the entire flow flow duct being designed in bent form and permitting a relatively compact Diaphragm* design and therefore a compromise between high conveying flows (in all directions of flow within the porous diaphragm and not only in the dx direction), high dT/dx and an efficient design of the porous diaphragm, as well as special flow duct forms due to absolute lenghtening (cf. points 12 and 13.), the diffuser staircase representing in design terms, irrespective of the direction of translation of the trans diaphragm vapor flow, a useful basic element for compact Diaphragm* designs for the purpose of increasing the specific force:

[0587] F_D,x(A_T,ρ_T)=F_D(A_T,ρ_T)*Δl/Δx  (56)

[0588] in which, here, Al is the total length of the transdiaphragm flow path within the three (x,y,z) directions of translation and the specific contact area per unit length of the transdiaphragm cross section in x-translation and consequently an increase of the δρ/δx term in equation (55) is maximized per flow duct, and/or

[0589] 15. Internested successively lined-up diffusers (cones) (see FIG. 33 showing internested diffuser cones with a) a common peripheral (annular) duct, b) discrete outflow ducts and c) a combination of a) and b), while a) showing a continuous version , the discrete flow ducts being equipped with heat exchangers (fine lines); n.b. the ratio of the dimensions is arbitrary) and/or succesively duplicated diffuser (-like) flow ducts (see FIG. 34 showing duplication of a flow duct by (continuous) flow duct widening, including widening of the flow cross sections within the radiators of the transduct heat exchangers (fine lines, cf. star) according to one of the solutions in point 3.-12., which are or not equipped with heat exchangers and which optimize both the specific contact area per unit of length in x-translation lation and consequently the increase of the δρ/δx term in equation (55) and the (1-dimensional) fluid mechanics, particularly high pulse is required (e.g. in the central region) of the transdiaphragm flow of the diffuser (e.g. in the B_j/C_kDiaphragm* type cf. FIRST PART of the invention), either the first diffuser (cone) having the largest flow diameter and also completely and/or partially enclosing the following cones (FIG. 33) and/or the first diffuser being divided into at least one further diffuser either once or more than once and thereby beginning about a corresponding separation of the transdiaphragm vapor flow (i.e. without return, cf. bifurcations) (cf. FIG. 34),

[0590] in the first case (FIG. 33), enclosing a number n_conof internested cones with succesively decreasing cross sections for a given transdiaphragm flow length Δx, which either guide the vapor (with the exception of the central flow along the axis of the flow duct) into a common peripheral (e.g. concentric) annular duct (FIG. 33a) or discharge it in a discrete annular duct, located further inside two respective adjacent (e.g. concentric) diffusers, at the same height as the peripheral flow duct, into the next evaporation unit (FIG. 33b), or result (FIG. 33c) in a combination of the solutions illustrated in FIGS. 33aand b, and/or (where appropriate, concentric) annular flow ducts are used (cf. FIGS. 33a,b), which, before outflow into the next plant unit, have either (i) a flow cross section continuously widening transdiaphragm, (ii) a constant cross section or (iii) a (peripheral) cross section continuously narrowing again, and the number n_conextends in the range of 1<n_con<100, preferable od 1<n_con<10, (which additionaly accelerates the vapor flow discharged in the peripheral annular duct, even in the case of a widening overall cross section of the outer flow cone, as a result of its relative reduction in cross section. The corresponding δA/δx term in equaition (25) must be added as a (positive) amount (!) (corresponding to the surfaces of a sine function alternating by y=0) to the total amount and incrteases the correponding contribution to F_D. If the pulse of the transdiaphragm flow has no decisive importance for the result in the next following evaporation unit, the widening of the . . . ) and transfer the total diffuser cone flow according to the solutions in FIGS. 33a-cdirectly into the next following evaporation chamber and/or in combination with the geometric elements, claimed in EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995, at the flow outlet (with c_F-(german: c_W-) coefficients <0.3 resulting in the case of flow around) and which help to avoid condensations and/or turbulences at the flow outlet of a corresponding (main) Diaphragm*, and/or

[0591] (n.b. the multicone configuration results, in general, in a Diphragm* volume which is effectively better utilized for heating and expansion of the transdiaphragm vapor flow than the diffuser staircase)

[0592] 16. Measures for lengthening the transdiaphragm diffuser (variant) and multicone (i.e. diffuser) configurations according to point 15., which increase the absolute heating (energy supply) and the resulting expansion of the (macroscopic) transdiaphragm conveying and/or mass flow per (diffuser) flow duct, specifically:

[0593] a) Deflection angle 0°<α_x<180° between the at least one (diffuser) flow duct axis (of symmetry) and the x perpendicular to the Diaphragm* inflow side, the transdiaphragm diffuser axis (of symmetry) being non-bent and being coplanar in one of the three following translation planes:

[0594] a1) in the xy-translation plane of the corresponding (main) Diaphragm* and/or

[0595] a2) in the xz-translation plane of the corresponding (main) Diaphragm*, and/or

[0596] a3) in one of the possible translation planes in the xyz-translation space of the corresponding (main) Diaphragm*, which are either planar or curved (bent) and the curvature of which is formed from regular geometries (e.g. sphere (spherical cup), ellipse (elliptic cup) etc.) or from irregularly bent curves, and, in any case of the xyz-translation planes bent in space, encloses, for the (arbitrary) (diffuser) flow duct, the polar angle θ and the azimuth angle Φ between the inflow point on the inflow side of the Diaphragm* and the circumcircle of the flow duct carrier surface bent in the xyz-space, the corresponding bent (diffuser) flow duct xyz-carrier surface S_3dimbeing defines according to

[0597] S_3dim(r,Θ)=∫[∫r(Θ,φ)²sin ΘdΘ]dφ  (57)

[0598] If this arbitrary surface S_3dim(r,Θ) is considered from any position O at any point M within the transdiaphragm Diaphragm* volume, the dictance OM being fixed by the unit vector u having the amount r according to

[0599] OM=r(Θ,φ)*(Θ,φ)  (58)

[0600] the differential d(OM)=d[r(Θ,φ)*u(Θ,φ)] yields the general description of the (diffuser) flow duct xyz-carrier surface S_3dimaccording to $\begin{array}{cc}d\left(\mathrm{OM}\right)=\left(\delta r\left(\Theta ,\phi \right)/\mathrm{\delta \Theta }\right)d\Theta *\underset{\_}{u}+r\left(\Theta ,\phi \right)*\left(\delta \underset{\_}{u}/\delta \Theta \right)d\Theta +\left(\delta r\left(\Theta ,\phi \right)/\mathrm{\delta \phi }\right)d\phi *\underset{\_}{u}+r\left(\Theta ,\phi \right)*\left(\delta \underset{\_}{u}/\mathrm{\delta \phi }\right)d\phi & \left(59\right)\end{array}$

[0601] and the fixed solid angle, at which this surface in the Diaphragm* is considered from position O, is defined as the sum of the vectors u/r²

[0602] Ω=∫∫_Σ(/r²)dS

[0603] which pass all infinitesimally small surfaces dΣ on S_3dim, and/or

[0604] b) as a), but with discontinuous, i.e. kink-like change in orientation of the transdiaphragm flow duct with diffusers, the kinking being capable of being located both inside and outside a discrete diffuser or diffuser variant region and, in either of these cases, leading to a diffuser series lying

[0605] b1) within the xy-translation plane and/or

[0606] b2) within the xz-translation plane and/or

[0607] b3) within the xyz-translation plane lying in space according to a3) and/or

[0608] b4) within transdiaphragm translation planes of a main Diaphragm* which consist of any combination of translation planes a1, a2) and a3), and/or

[0609] c) as b), but the bend is continuous (round) and consists of

[0610] c1) concentric and/or

[0611] c2) parallel and/or

[0612] c3) nonconcentric (e.g. diffuser) flow ducts having an (arbitrarily) bent axis of symmetry, the bend of the axis of symmetry being selected in such a way that either

[0613] 1) no additional turbulences occur as a function of the operative Re number as a result of the bend and/or

[0614] 2) a (more) turbulent flow occurs without causing any risk of transdiaphragm condensation and/or

[0615] 3) a vortex street occurs at the diffuser center, in such a way that peripheral convergences are reinforced and accelerated, and/or

[0616] c4) nonconcentric (e.g. diffuser) flow ducts without a bent axis of symmetry and/or

[0617] c5) any bends and/or bend combinations, and/or

[0618] d) as b) and/or c), but consisting of flow duct segments, (e.g. circle arcs, i.e.circularly curved pipe segments) which, in the case of at least one of their changes in orientation, oscillate in a direction opposite to that of the adjacent segments (cf. FIG. 35 showing flow duct with bent duct segments, the bend orientation of which oscillates in the x/z translation plane and, at the same time, has a continuous widening of the flow duct and terminates in a Laval nozzle outlet. Top: asymmetric; middle: symmetrical increase in the oscillation amplitude; bottom: meander-like with a constant oscillation amplitude) and/or

[0619] e) as a) to d), but close off the transdiaphragm (diffuser) flow duct region (in the direction of flow) by means of at least one nozzle, but at most by means of a number of nozzles corresponding to the number of diffusers, this at least one nozzle being preferably an ultrasonic of Laval nozzle (cf. chapter further below), and/or

[0620] f) (diffuser) flow duct arrangement within a (main) Diaphragm* for the separation of conventional evaporation chambers according to 16. a)-e), but with an optimized length ratio l_diff/l_nozzleor l_wid/l_nar, whilst maintaining a compact design (cf. FIG. 36 is as for FIG. 35, here showing a Laval nozzle inlet and outlet and two different length ratios between the transdiaphragm flow duct (here with δ=0°) and Laval nozzles, ie. l_wid/l_nar) with branching, but without backflow, cf. “bifurcation”, next chapter), the length ratio or being in the range of 1.5<l_diff/l_nozzle(or:l_wid/l_nar)<1000, preferable in the range of 1.5<l_diff/l_nozzle(or:l_wid/l_nar)<50, and/or

[0621] g) as a) to e), but, here, α_xis the outflow angle α_xon the backside of the corresponding (main) Diaphragm*, and/or

[0622] 17. Spiral flow ducts with transdiaphragm structural parts according to at least one of points 1. to 16. of the Technical Solutions of this chapter, which represent a special case of (diffuser) flow ducts bent in space, since their direction of flow is not explicitly tied to any special surface on the xyz-translation space of a (main) Diaphragm*, and therefore allow a further form of better utilization of the xyz-translation space of a Diaphragm* for the heating, expansion and/or acceleration of large transdiaphragm vapor flows, but instead (the propagation direction of) spiral (diffuser) flow ducts are tied to any axis (where appropriate, axis of symmetry) in the xyz-translatioon space of a main Diaphragm* (i.e. in relation to the transdiaphragm space through which they pass), so that a corresponding (diffuser) spiral itself is advantageously characterized (see FIG. 37 showing arbitrary sectional plane E in a cone, touching two spheres, inscribed in the cone, at the points F₁and F₂. F₁and F₂are the focal points at the resulting ellipse within the cone, the direction of flow in a spiral passing through the cone being identical only at corresponding focal points, but never in a straight line or plane) by a flow cone, widening in the direction of flow, as (idealized) outer limitation and, as a consequence of a wide variety of resulting flow outlets, is particularly suitable to be used for Diaphragm* backsides which are bent and adapted to the near-final contour product form, and/or

[0623] 18. Flow worm and flow meander in the flow cone according to point 17. of the Technical Solutions, as a further basic Diaphragm* element and control stuctural part for transferring a controlled vapor quantity from one (conventional) vapor or deposition chamber into the next, the flow worm and flow meander being combined with at least one of the Technical Solutions of the chapter “Bends” and/or “Bifurcations” (see next chapter), and the flow cone being an ideal geometric structure which, like an (outer) casing, encompasses the transdiaphragm volume, in which is located the flow duct wound spirally or in a meander-like manner (and/or in a similar way, cf. point 19.3) in the xyz-translation space of a Diaphragm*, these flow ducts preferably being shaped to form a diffuser and heated, specifically heated preferably inductively and/or by the resistance—method, and the diffuser angle amounting to −60°<α<60°, preferably −10°<α<10°, and the flow duct wound to form the flow worm and flow meander possessing, where appropriate, the following (geometric) characteristics: appropriate, the following (geometric) characteristics:

[0624] 18.1 Flow duct with a continuous or (particularly in the case of a polygonal spiral, see below) pseudo-continuous widening of the spiral (or meander-like) projection of the profile of the axis of the flow duct, the vapor flow experiencing correspondingly continuous or pseudo-continuous heating and expansion in the direction of flow and therefore conforming to basic requirements of the Diaphragm* (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) and being capable, in the vertical inner cross section having a flow routing wound in a worm-like manner, of assuming the profile illustrated in FIGS. 38a-c(showing flow spiral with a worm-like propagation direction transdiaphragm and with 5 full roundings, here with an elliptic flow duct cross section in the horizontal and, optionally, a centered flow inlet (detail at top right), the tangent to the main vertex regions forming an inner cone with an opening angle a and an outer cone with an opening angle β, FIG. 38bin particular showing a flow spiral with a/b>1 and branches (bifurcations) which, if appropriate, are used for additional transdiaphragm flow ducts and FIG. 38cshowing in particular a porous diaphragm with symmetrically arranged flow ducts according to FIG. 38a; nb. O=surface) the central axis of the transdiaphragm profile of the worm here being colinear with the x-perpendicular to the surface of the Diaphragm* , and, in the worm-like flow routing wound spirally in projection, allowing, in comparison with alternatives bounded by sharp bends, a relatively high control of dead flows and lower fluctuations in the (local) stationary flow speed, i.e. smaller deviations from the mean transdiaphragm flow speed, and being arranged in a matrix of symmetrically or asymmetrically arranged trans diaphragm flow ducts which, as a whole, make up a form of the porous diaphragm Diaphragm* which is arranged over the whole of or part of the cross section of the shaft of the evaporation and/or mixing chamber, into which or out of which the vapor flows, and/or

[0625] 18.2 As 18.1, but with the following design variables of the flow worm in the flow cone:

[0626] a) the angle between the x-perpendicular and the central axis of the flow cone σ, i.e. α_x,σ, in which 0°≦α_x,σ<90°, and/or

[0627] b) the form of the ideal outer casing which surrounds the transdiaphragm Diaphragm* volume through which the flow duct passes, including:

[0628] b1) a superproportional and/or subproportional widening of the casing cross section in the out flow direction (FIGS. 39a-dshowing a) superproportional and b) subproportional cone widening and c), d) two of the possible resulting transdiaphragm (duct) volumes through which a flow spiral passes, e.g. in the form of a worm, (c): continuous widening of cross section, d): continuous widening and contraction of cross section).) or no widening (i.e. a cylinder) and/or

[0629] b2) a vertical widening of at least one of the ideal casing cross sections in the outflow direction can be described according to a mathematical function or is similar to this (e.g. exponential, logarithmic, hyperbolic or parabolic or any polynomial, etc. cf. FIG. 39e) and/or

[0630] b3) any vertical widening of the (ideal) casing cross section in the outflow direction and/or

[0631] b4) transitions from a round to an angular outer (casing) and inner (flow duct itself, etc.) design for the purpose of more efficient space utilization of the Diaphragm* volume (cf. FIG. 39eshowing a transition from a round to an angular outer cone of the volume, through which the transdiaphragm flow duct passes, in order to utilize the available space of the Diaphragm* efficiently; hatched area in 39e: closed; dotted area in 39e, right hand side: outlet of the worm shaped (meanderlike) flow duct), so that the vertical (casing, i.e. external) form of the flow cone is either a) round, or adapted b) to the polygonal and/or c) to the mixed form of movement of the flow duct and/or

[0632] b5) any geometry of the outer circumference of the flow duct volume, in which the meander like and/or spiral or arbitrarilay shaped flow duct is located with D_A/D₀<l<D_A/D₀in the transdiaphragm Diaphragm* volume (cf. FIG. 39fshowing transdiaphragm detail with an arbitrary, here vase-shaped volume for the transdiaphragm flow duct;) and/or

[0633] c) rounded and/or angular flow cross sections and/or

[0634] d) flow duct wall bent in parallel and/or concentrically and/or

[0635] e) the inlet (cf. FIG. 38b) and/or transdiaphragm dimensions D_H(at 0.01≦D_H<100), a₀, b₀can assume a side ratio a₀/b (ellipse: radius ratio a/2/b/2) for quadrangular and correspondingly rounded flow duct outer walls with the special cases a=b (i.e. quadratic flow cross section or circle), in which 0.1<a/b<1000, but preferably 0.4<a/b<10 (cf. FIGS. 38a,b), and/or

[0636] f) the number of (full) loops for the flow duct according to 18.1, this number ranging from 0.2 to 100, preferably to 10, and/or

[0637] g) relating to the diffuser (-like) flow duct according to 18.1 wound in space, but with the following cross-sectional geometries:

[0638] g1) triangular and/or quadrangular form (rounded: different radii of opposite main and secondary vertices of elliptic flow cross sections, radius ratios b_intand b_extand changes in the radius ratios, cf. FIG. 40 showing a) flow duct cross section geometries relating to solution 18.2. g) of the Technical Solutions of the chapter “Transdiaphragm flow ducts . . . ” with Lemniscate and Cassini curves in g4), and/or

[0639] g2) symmetrical polygons (including symmetrically rounded polygons, FIG. 40) and/or

[0640] g3) asymmetric polygons (including asymetrically and/or arbitrarily rounded polygons, FIG. 40), and/or

[0641] g4) cross-sectional forms which can be described fully, but at least partly by a circle equation (e.g. center quation) and/or parabola equation (e.g. vertex equation) and/or ellipse equation (e.g. polar equation) and/or hyperbola equation and/or by a cone section in a general position and/or by any exponential and/or logarithmic and/or polynomial form and/or by any roulette and/or by a crank mechanism form of movement and/or by a spiral form (cf. above) and/or by a Cassini curve (e.g. lemniscate) and/or by harmonic oscillations and/or deviate by (microscopic) irregularities from these forms, without altering the corresponding (macroscopic) overall form (mean axis), or are characterized by any form, such as those resulting from the overlap of at least two of these basic cross-sectionional forms (cf. FIG. 40, first continuation showing cross sections and cross-sectional segments according to various mathematical functions and second continuations relating to the arbitrariness of flow duct cross section geometries (hatched areas)), and/or

[0642] h) any inner angle a(x,y,z), outer angle β(x,y,z), angular ratio α/β(x,y,z), including asymmetric variants with ε₁unequal to ε₂(FIG. 38b) and continuously and discontinuously changing quantities δα(x,y,z), δβ(x,y,z) and δγ(x,y,z) of the cone or of related ideal inner and outer casings (FIG. 39a) which are between 0° and 90° and/or

[0643] i) the shortest distance between the inside diameters of the (ideal) spiral l₁, the D_H-values of which being 0.2 D_H<l₁<100 D_H(cf. FIG. 38a),

[0644] j) the distance l_ω between two flow stages, in which 0.2 D_H<l_ω<100 D_H, variation of the distance dl_ω between successive flow stages and variation of this variation, i.e. δ²l_ω with subsequent stages (cf. FIG. 38a) and/or

[0645] k) the (projected form of movement (of the axis) of the flow duct in the flow cone (or flow cylinder) describes any curve in space and preferably an (if appropriate, irregularly or angularly composed a) Archimedean, b) hyperbolic, c) logarithmic or d) arbitrarily combined and/or regular and/or irregular spiral (cf. FIGS. 41a-cand eshowing forms of movement of the (central axis of the corresponding) transdiaphragm flow ducts in the flow cone, here projected onto the porous diaphragm surface with 41aan Archimedean spiral, 41ba hyperbolic and 41ca logarithmic spiral and 41ea perspective representation of a flow duct spiral and 41f(where appropriate, projection) of a meander-like flow duct) which either has a continuous, i.e. round contour or else is polygonal, specifically triangular, quadrangular, pentagonal, hexagonal, septagonal, octagonal, etc., or has a combination between continuously round and at least one of these polygonal and arbitrarily irregularly polygonal variants (cf. FIG. 42cshowing multiple flow cone, a superheated flow duct passing through each individual cone, here with a lateral double spiral with a different outlet level) or a combination of at least two of these polygonal solutions. In the case of the angular, i.e. polygonal variants of the contour of the flow cone, the edge lengths for a given cone height can vary or have a constant length (cf. FIG. 41dshowing projection PS of a hexagonal spiral for the form of transdiaphragm movement of the flow duct through its cone K), and/or

[0646] l) angle of inclination ω of the flow duct in the flow cone, etc. (see below) relative to the surface of the Diaphragm*, which angle is defined by the factors under c)-j) (cf. FIG. 38c) and is in the range of 0°<ω<90°, ω_minbeing fixed primarily by the ratios α/β, α^max/β^max, α/β, α^max/β^max, distance l_ω, i.e. by the “internal” design, and ω_maxbeing fixed primarily by the transdiaphragm state gradients dT/dx and dp/dx, i.e. “externally”, and/or

[0647] m) the reversal of all hitherto occurring versions into a nozzle form (rotation of the cone with respect to the inflow and outflow direction), as may be expedient in the case of transdiaphragm material conveyance driven locally by a pressure gradient, and/or

[0648] n) position in space and nature of the inlet and outlet orifices, of which the relative variability (e.g. dimensions) increases with the angle α_x.σ (cf. FIGS. 38 and 39e), and which can thereby assume the inlet and outlet cross sectional forms described under g) (different from the transdiaphragm cross section!), the vapor outlet of the flow cone consisting of an orifice which, relative to the flow inlet, is comparatively large (in the suction mode) or comparatively small (in the local pressure mode), in order, for example, to ensure a large area for the suction (local pressure) onset, i.e. suction (local pressure) effect of the suction (local pressure) flow, and this orifice, where appropriate, being larger (smaller) than the area which is predetermined by the cross section of the spiral flow duct and which optionally can assume the entire contour of the cone, but at least, depending on the oblique section, a part of this contour which is advantageous in terms of fluid mechanics (FIG. 39e), and/o

[0649] o) guide blades according to 4. and 5. and/or according to 4. and 5. are used in the diffuser itself and/or

[0650] 19. Variations of the flow worm, etc. in the flow cone according to point 18., for subsequent flow stages, selectively, (e.g. after a complete revolution 2π_ω=360° of a worm turn or after any part of a revolution) parts of the inner and/or outer wall of the flow cone and/or of the flow duct disappearing and/or the diameter of the inner wall of the flow cone and/or of the flow duct increasing subproportionally to the corresponding quantities of the respective outer wall, in order to ensure branches of flow ducts, specifically

[0651] 19.1 into the inner cone bounded by the angle a (cf. FIG. 38b), e.g. for the accelerated transdiaphragm (direct) conveyance of part of the vapor flow into a following plant unit, the inner space defined by a, da etc. being, where appropriate, lined with a real cone and/or, in addition, any flow ducts, etc. which increase the corresponding suction effect caused by underpressure from the following plant unit (pressure effect caused by overpressure in the following plant unit) and consequently the corresponding conveying flow (n.b. such an inner space without a lining is shown in FIG. 41efor illustration) and/or

[0652] 19.2 into the outer space, bordered by the Diaphragm* surface and the outer casing, of the (extrapolated) flow cone (cf. FIG. 38b), e.g. for bifurcations see the following chapter) or, for (lengthened or shortened) material conveyance, into another, e.g. one of the following plant unit(s), via an additional flow duct of any kind and/or

[0653] 19.3 for branching the inflow duct out into at least two (e.g. spiral or meander-like, cf. FIGS. 42a-dand/vs. 42fshowing multiple flow cones, a super heated flow duct passing through each individual cone, a) laterally and with different outflow heights, outflow angles, outflow orifice dimensions and outflow orifice forms, b) lateral double spiral, if appropriate with a common diffuser outlet, c) lateral double spiral with a different outlet level and d) central (longitudinal) multiple cone, where appropriate a spiral flow duct passing through the internested individual cones (cf. FIG. 38b)) transdiaphragm flow ducts which then, where appropriate, produce either symmetrical (e.g. double) spirals (FIG. 42a) or (laterally) asymmetrically displaced cones (e.g. multiple spirals) of the same or similar form (FIG. 42b, c) and/or definite transdiaphragm volumes which are ideally formed by the corresponding flow duct extremities, the flow ducts being transferred depending on the local propulsion force and the Diaphragm* type, from a plurality of flow inlets into one main outlet or from one vapor flow inlet into a plurality of vapor flow outlets (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995.

[0654] 19.4 internested cones of equal and/or different diameters for a given transdiaphragm Diaphragm* cross section for increasing the suction effect, along with reduced vapor heating (despite the heat exchangers possibly mounted in the cone), if appropriate flow duct contractions (nozzles) being provided selectively downstream of at least one of the cones for a better control of the flow, and the successively following cones having both smaller (FIG. 42d) and larger diameters, and/or

[0655] 19.5 in any combination with contractions in cross section (nozzles) and/or bifurcations and/or flow bends (see next chapter) and/or (internal and/or external) geometric elements (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995),

[0656] 20. Diaphragms with any number of transdiaphragm flow ducts, which are constructed, where appropriate, from diffusers and/or nozzles according to points 1. to 19. and are composed of the following scenarios:

[0657] 20.1 of any portions (of the Diaphragm*) having flow ducts designed symmetrically relative to at least one of the axes of symmetry possible in the xyz-translation space, or

[0658] 20.2 of a completely symmetrical design in respect of at least one of the possible xyz-translation axes in the transdiaphragm Diaphragm* space or a

[0659] 20.3 of an entirely random design.

[0660] 21. Porous diaphragms according to at least one of solutions 1. to 20., such that, even at low flow speeds v and with low Re numbers, including a laminar flow, high dT/dx gradients are also achieved for large conveying flows and/or in the case of a compact Diaphragm* design.

[0661] 3. Contractions of the Flow Duct Cross Section (nozzles and corresponding combinations)

[0662] Transdiaphragm flow duct contractions for (local) acceleration of the transdiaphragm vapor flow reduce, in general, the suction effect of the process as a whole and are therefore employed on the premise that the global suction effect and plant productivity remain maximized (cf. equations (25) and (26)). Consequently, (apart from local and regional exceptions such as, for example, pressure-operated and transdiaphragm material conveyance of individual evaporation chambers, such as, in particular, for magnesium and other relatively highly volatile matter, such as water, alkali (alkaline-earth) metals, etc.) flow duct contractions and/or (ultrasonic) nozzles, preferably in combination with other transdiaphragm Diaphragm* structural parts are used.

[0663] 3.1 Diffuser (heat exchanger) Nozzle Combinations

[0664] Any flow leads to a reduction in speed particularly in the boundary layer of the flow volume. FIG. 43 shows the development of the profile of the flow speed in a flow duct which consists of a diffuser/nozzle combination and which is equipped with a heat exchanger in the diffuser region. Whilst the diffuser reduces the acceleration experienced by the vapor flow as a result of heating in the diffuser region and allows more efficient utilization of a given vacuum (cf. FIG. 21), the following nozzle, on balance, permits a higher vapor outflow speed in comparison with the speed before inflow into the diffuser; D=diffuser; Dü=nozzle; B=bifurcation; 2=heating effect on v-profile; 4=section for bifurcation. At the start of inflow, the diffuser brings about, in comparison with the cylindrical flow duct, an additional reduction of the flow speed, inter alia in the flow boundary layer. In this case, the diffuser angle is selected in such a way that a breakaway of the flow boundary layer, for example caused by local turbulences (outside the flow), is avoided. In comparison with a flow duct having a constant cross section, under these conditions and in the case of a given Re number at the inflow cross section (cf.

[0665] FIG. 21), a diffuser reduces:

[0666] the initial flow duct length l_j, in which the transverse flow profile is unstable, and therefore also the contribution to the frictional resistance F_Fwhich occurs as a result of friction inside the flow (cf. FIG. 7b, and/or

[0667] the contribution to the frictional resistance F_Fcaused by friction between the pipe inner walls in the region of the diffuser and the flowing medium and/or

[0668] laminar fraction with parabolic transverse (transduct) speed distribution relative to the turbulent fraction with exponential or logarithmic transverse speed distribution in the total flow and/or

[0669] the range of existence of unstable stability of the laminar flow above the critical Re number.

[0670] Consequently, after a flow time t_sor after a flow path l_s, under identical flow conditions (identical Re number, flow speed v₀and cross section A₀at the inflow point), a relative increase of v_max(diff) results in the diffuser flow, as compared with v_max(flow) of a flow in the (e.g. cylindrical) flow duct of constant flow cross section (see FIG. 44 showing stabilized speed distribution over the transverse cross section of a cylindrical flow duct after having passed the initial length l_i, here with (1) laminar and (2) molecular flow of a compressible gas). Accordingly, for the operative Re range, the diameter of the inflow orifice of the diffuser, D₀, must be selected so that l_sand l_iare (approximately) identical.

[0671] Altogether, a braking of the flow in the boundary layer takes place, in association with (relative) acceleration in the flow center. However, even at constant temperatures, the difference Δv_max=v_max(diff)−v_max(flow) also leads in the (transverse) flow center of a diffuser to a relative increase in the local partial throughput z*δq_min relation to the corresponding partial throughput in the center of a (conventional) concentric flow duct, whilst a relative speed reduction and resulting throughput reduction −(l−z)δq_m=(z−l)δq_m, not taken into account in equation (55), occur in the boundary layer of the diffuser. For given q_mat the inflow cross section, this relative increase is an (instantaneous) relative increase of F_pin the central diffuser region. Since F_D=F_p−F_Fand F_Dcompletes the term F_F, z*δq_mis an increase of F_Dwhich is of particular importance for following nozzles, e.g. during momentum transfer, in the course of vapor deposition, whereas it is relatively unimportant in the case of A_i/B_jdiaphragms.

[0672] Resistance-heated and/or induction-heated walls generate an (initially local) heating and expansion of the vapor (in the boundary layer) which bring about an increase in the speed and pulse in the boundary layer of the flow and which are propagated via this progressively in the transverse direction over the entire profile of the flow speed (cf. position 2, FIG. 43). The relation illustrated in FIG. 43 applies both to transdiaphragm flow ducts and to slots in transduct heat exchangers themselves. In this way, v_max(diff) and Δv_maxare increased in comparison with heated cylindrical vapor routings.

[0673] For the retention and/or significant increase of the transdiaphragm vapor flow pulse, the (if appropriate diffuser) flow duct is combined with a continuous contraction of the flow cross section. This contraction has the form of a nozzle, preferably an ultrasonic or Laval nozzle (form, cf. Technical Solutions in the Bifurcations chapter). The angle and form of the following flow duct contraction (nozzle) are selected in such a way that the speed gain Δv_maxis converted optimally into an increase of F_D.

[0674] 3.2 Nozzle/Bifurcation Combinations with and without Diffusers (cf. next chapter)

[0675] The corresponding combinations allow relatively high (exit) speeds of the transdiaphragm vapor flow and are required in transdiaphragm material conveyance between a B_ievaporation unit and a C_kdeposition unit (cf FIRST PART), but also for building up a sufficient (dynamic) pressure for the successful branching-off and backflow of a part quantity of the vapor flow via bifurcations (cf. following chapters). In an unheated diffuser, the speed v decreases in the direction of flow in proportion to the opening angle δ (FIG. 43, position 2 vs 1). The opening angle and heating capacity are coordinated with one another in such a way that, on balance, as a result of continuous diffuser widening (with and without breakaway, i.e. turbulences and/or dead flows) between the flow boundary layer, the braking effect experiences relative acceleration on entry into the continuous nozzle contraction (position 3, FIG. 43), but, at the latest at the narrowest cross section (position 4), exceeds the speed at entry into the diffuser (position 1) over the entire profile in position 4, but at least in the boundary layer there, and consequently affords the preconditions for a pulse which

[0676] a) ensures a successful bifurcation flow back into the original (conventional) evaporation chamber which functions as a vapor reservoir,

[0677] b) is sufficient to ensure the functions of the nonbranched (bifurcation) vapor flow (e.g. either in the center of the flow duct or on the (if appropriate, selective and in a)-coordinated) regions of its periphery) for transdiaphragm material conveyance.

[0678] In a diffuser/nozzle combination, the diffuser assumes the role of preparing the relative (cf. without heating and nozzle) and absolute pulse increase (in the state superheated in relation to the vapor) in the case of minimized pumping capacity losses, and, in case a), this role makes an additional contribution to F_Din equation (55) which is derived in the following chapter. The nozzles for conveying bifurcation backflows can consist both of ultrasonic and of Laval nozzles and are optionally also used without diffuser.

[0679] 3.3 Structural-part “Oscillations”

[0680] Absolute length and absolute contact area amount per absolute length and absolute contact area amount per diffuser are of great importance and are greater by a real multiple than the corresponding quantities of a coexisting nozzle, and the opening angle of a diffuser, d (i.e. 0°<δ<180°), is preferably smaller than the inflow angle e (i.e. 0°<ε<180°) of a following nozzle, and both variations in cross section are preferably continuous (cf. FIG. 43). On account of limited conditions of space in a given plant version, the dimensions of the transdiaphragm structural parts involved cannot be widened at will (n.b. the size ratios along the translation axes in the figures of this patent Application are selected arbitrarily). The structural-part combinations with nozzle are particularly important for efficient transdiaphragm heating of large vapor quantities using heat exchangers since they make recurring diffuser/nozzle combinations (i.e. oscillating transdiaphragm flow duct structural parts, and therefore the means for wide-ranging manipulations of F_Dand F_ppossible (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and equation (55)).

[0681] 3.4 Pressure-driven Material Flows

[0682] Pressure-driven material flows are used either in part units of the entire process operated by suction flow, upstream of the mixing chamber, and/or in conjunction with transdiaphragm plasma guns for any units including the PD diaphragm, before deposition. Both ultrasonic nozzles and Laval nozzles are used for pressure-driven (transdiaphragm) material flows.

[0683] Technical Solutions

[0684] In connection with the abovementioned process, therefore, the following technical details are employed:

[0685] 1. Vapor deposition processes, the conveying quantity of which is controlled by a porous diaphragm Diaphragm* and in the transdiaphragm flow ducts of which ultrasonic nozzles are used ( . . . and in the at least one transdiaphragm flow duct of which at least one ultrasonic nozzle is used) and/or

[0686] 2. Vapor deposition processes, as 1., the ultrasonic nozzles of which are characterized by a loss figure ζ_Uin the range of 0.001 to 10.0, preferably in the range of 0.1 to 5.0.

[0687] 4. Bifurcations and Nozzles, in Particular Laval Nozzles

[0688] In the abovementioned vapor deposition process, unless otherwise characterized (cf. ventilators, etc., SECOND PART of the invention, further below and/or for F_D<F_For F_D≈F_F, see chapter 10, point (vi) of FIRST PART and chapter 2 of SECOND PART of the invention), a part quantity of the (transdiaphragm) vapor flow or flows is branched off from the transdiaphragm material conveyance via bifurcations and is returned into the associated evaporation chamber (if appropriate, plurality of evaporation chambers), In the abovementioned vapor deposition process, bifurcations are flow duct or flow pipe branches which are located either upstream of the porous diaphragm Diaphragm* (i.e. in the screen mode, see below) and/or inside it (i.e. in the depth filter mode, see below) and which, by utilizing the pulse force of the transdiaphragm vapor flow, are employed for the controlled (e.g. condensation-free) part-quantity return and therefore for building up the vapor reservoir and for transdiaphragm flow acceleration by pressure reduction (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT/EP95/02882 of Jul. 19, 1995 and FIG. 45 ff. of this Application).

[0689] In the abovementioned process, vapor deposition is characterized by transdiaphragm material conveyance with the branching-off of a part flow quantity. In this case, transdiaphragm material conveyance is controlled case, transdiaphragm material conveyance is controlled, where appropriate, by the branching-off of the part flow quantity.

[0690] Dividing the transdiaphragm flow quantity into a (successful !) bifurcation backflow and into an evacuation flow allows the actual suction effect (which disappears again after the closing of the vapor sources, together with the emptying of the vapor reservoir, and/or of the apertures) and, together with transdiaphragm vapor heating, gives rise to the propulsion force for the speed variation and expansion of the gas/vapor during transdiaphragm passage. The control of the pulse forces is therefore dependent on the variation in the flow mass between the Diaphragm* inlet, i.e. on dm (corresponding to a flow resistance, see EP-Application 94111991.9, Aug. 1, 1994, and PCT/EP95/02882 of Jul. 19, 1995) and on dm_D(i.e. the actual) vapor flow quantity (ditto) evacuated per (main) Diaphragm*, i.e.:

[0691] dm=dm_D+dm_B  (60)

[0692] and the corresponding volumes are

[0693] V=(1−α_B)V+α_BV (61),

[0694] in which dm_Bor (α_BV) are the vapor quantities or vapor volumes returned via the bifurcations for the buildup of the vapor reservoir and located in a quasi-infinite circular flow (n.b. a quasi-infinite circular flow is not necessarily associated with a dead flow which increases F_F.

[0695] State Equations for Material Conveyance Without a Transdiaphragm Temperature Gradient

[0696] Transdiaphragm material conveyance therefore contains (in the operational state, i.e. in the state of a dynamic material conveyance equilibrium), between two adjacent (conventional) evaporation and/or mixing chambers or between an evaporation (and mixing) level and a deposition level, not only a variation in the flow speed (v₂−v₁) (cf. equation (36)) and/or in the density (ρ₂−ρ₁) as a result of a temperature increase and/or variation in cross section (cf. equations (54) and (55)), but also a variation in the flow speed (v′₂−v′₁) (and, if appropriate, in the density (ρ′₂−ρ′₁) as a result of a reduction of the conveyed quantity q_v.Das a result of the branching-off of partial quantities via bifurcations and backflow ducts, q_vβ, which return the branched-off quantity into the (evaporation) chamber, from which the quantity q_v,iflowing into the Diaphragm* comes.

[0697] Both terms on the right-hand side of the equation (44) therefore apply to the pulse in the flow duct having at least one such bifurcation, irrespective of whether the corresponding flow duct has a temperature or not and/or whether the corresponding flow duct has variations in cross section or not. In the unheated flow duct, equation (45) is simplified to (see next page):

[0698] v=q_v/A  (62),

[0699] in which q_v=q_m/π=dm/dt=1/ρ, i.e. q, is the throughput in e.g. [m³s]. For the state equation of a vapor flow in the unheated flow duct with (controlled) branching-off of a part flow quantity, the first term on the right-hand side of equation (44) therefore yields: $\begin{array}{cc}\begin{array}{c}m\delta v/\delta t=m*\delta v/\delta x*\delta x/\delta t=m\left[\delta \left(q_{v,i}/A\right)/\delta x\right]v\\ =m\left[\left(1/A\right)*\left(\delta q_v/\delta x\right)-\left(q_v/A^2\right)*\left(\delta A/\delta x\right)\right]v\end{array}& \left(63\right)\end{array}$

[0700] and this results, in a similar way to equation (48), in:

[0701] mδv/δt=[(ρq_v/A)*(δq_v/δx)−(ρq_v²/A²)*(δA/δx)]Δx  (64)

[0702] Equation (64) is valid from x=0 to x=x₁and from x=x₂to x=x₃(cf. FIG. 45 showing diagrammatic Diaphragm* for deriving the state equation for the transdiaphragm branching-off of a part flow quantity via bifurcations). In section x=x₁to x=x₂, a vapor volume α_BV is branched off via bifurcations from the (transdiaphragm) vapor flow and is returned into the original chamber. The bifurcation-characterizing part flow volume α_BV is dependent on the distance (x₂−x₁). According to FIG. 45,

[0703] _x1^∫x2=(−δV/δx)dx=(−δV/δx)_x1^∫x2dx=−δV/δx(x₂−x₁)=α_BV  (65)

[0704] Accordingly:

[0705] (δV/δx)=−α_BV/(x₂−x₁)  (66)

[0706] and the second term on the right-hand side of equation (44) yields:

[0707] vδm/δt=v*δ(ρV)/δt=v*[δρ/δx*δx/δt]*V+vρ*[δV/δx*δx/δt]  (67)

[0708] Substitution with equations (46) and (62) results, in a similar way to the derivation of equation (48), in: $\begin{array}{cc}\begin{array}{c}v\delta m/\delta t=\left(\mathrm{\delta \rho }/\delta x\right)*v^{2}V-\left[{\alpha }_{B}V/\left(x_2-x_1\right)\right]*v^2\rho \\ =\left[\mathrm{\delta \rho }/\delta x-{\alpha }_B\rho /\left(x_2-x_1\right)\right]*{\left(q_v/A\right)}^2*A*\Delta x\\ =\left[\left(q_v^2/A\right)*\mathrm{\delta \rho }/\delta x-\left(q_v^2/A\right)*{\alpha }_B\rho /\left(x_2-x_1\right)\right]*\Delta x\end{array}& \left(68\right)\end{array}$

[0709] Together with equation (51), there results the state equation in the flow duct without a temperature gradient, but with a variation in cross section, i.e. from x=0 to x=x₁and from x=x₂to x=x₃:

[0710] −(PδA/δx+AδP/δx)=[(ρq_v/A)*(δq_v/δx)−(ρq_v²/A²)*(δA/δx)]  (69)

[0711] and in the corresponding flow duct with branching-off of the part flow quantity via a bifurcation (or bifurcations) and corresponding backflow ducts, i.e. from x=x₁to x=x₂:

[0712] −(PδA/δx+AδP/δx)=[(ρq_v/A)*(δQ_v/δx)−(ρq_v²/A²)*(δA/δx)]+[(q_v²/A)*δρ/δx−(q_v²/A)*α_Bρ/(x₂−x₁)]  (70)

[0713] To obtain the operative pulse in a similar way to equation (53), the following applies in the flow duct without a temperature gradient, without a variation in cross section and without a bifurcation and bifurcation backflow (cf. above):

[0714] ΣF₀=F_P−F_F=_x0^∫x3[ρq_v/A*(δq_v/δx)]dx  (71)

[0715] In contrast the equation of pulse preservation (cf. Diaphragm*, type 2, FIRST PART of the invention) adapted to the bifurcation problem applies, in the (if appropriate, heated) state without a temperature gradient, to the abovementioned Diaphragm* which contains in its flow ducts not only the variations in cross section, but also bifurcations for branching off part flow quantities from the transdiaphragm material conveyance:

[0716] ΣF₀=F_P−F_F−F_D=_x0^∫x3[ρq_v/A*(δq_v/δx)−(ρq_v²/A²)*(δA/δx)]dx+_x1^∫x2[(q_v²/A)*δρ/δx−(q_v²/A)*α_Bρ/(x₂−x₁)]dx  (72)

[0717] Accordingly, in the abovementioned vapor deposition process, the contribution to the force of a Diaphragm*, F_D, which comes about (as compared with the flow resistance) by a change of state as a result of a variation in cross sec tion and in density during the branching off of a part flow quantity from the transdiaphragm flow duct (without temperature variation) and as a result of the reduction of the transdiaphragm flow quantity within the diaphragms as a result of the at least one bifurcation backflow, is given by the difference between the equations (71) and (72), i.e. $\begin{array}{cc}\begin{array}{c}{F}_D\left(A_m,{\rho }_m,m\right)=F_D\left(A_m\right)+F_D\left({\rho }_m,m\right)\\ ={\int }_{\mathrm{x0}}^{\mathrm{x3}}\left[\left(\rho q_v^2/A^2\right)*\left(\delta A/\delta x\right)\right]dx+\\ {\int }_{\mathrm{x1}}^{\mathrm{x2}}\left[q_v^2/A*\left({\alpha }_B\rho /\left(x_2-x_1\right)-\mathrm{\delta \rho }/\delta x\right)\right]dx\end{array}& \left(73\right)\end{array}$

[0718] in which F_D(ρ_m,m) is the contribution made by bifurcations, in which, in contrast to equation (55) and to the density ρ (e.g. at the flow inlet), the density variation makes a negative contribution to F_Dwhich (requires, where appropriate, corresponding (construction) technical counter-measures (eg. partial heating of the transdiaphragm vapor flow and/or overheating (only) after bifurcation flow branching-off and/or suitable geometric elements etc. (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995).

[0719] It may be pointed out here that according to the Technical Solutions put forward in the preceding chapter for the (diffuser) flow ducts within a Diaphragm* and the resulting possibilities of combination with the Technical Solutions which include at least one bifurcation, the variables ρ, q_vand A in equations (71)-(73) and all corresponding equations, but also the variables ρ, q_mand A in equations (52)-(55) and all corresponding equations are functions of the translation axes x, y and z in a Diaphragm*, i.e. ρ(x,y,z), q_v(x,y,z), q_m(x,y,z) and A, (x,y,z)

[0720] Consequently, it is particularly useful for plant design to distinguish between the absolute contribution of F_D(A_m,ρ_m,m) to the force of a Diaphragm* and its specific contribution F_D,x(A_m,ρ_m,m) (cf. equation (56)) per relative operating length Δx_(op)/x₃, which, in an arbitrary position in space, becomes Δ1_(op)/x₃, i.e.

[0721] F_D,x(A_m,ρ_m,m)=F_D(A_m,ρ_m,m)*Δ1_(op)/x₃  (74)

[0722] in which

[0723] F_D,x=F_D,x(ρ_T,A_T)+F_D,x(A_m)+F_D,x(ρ_m,m)  (75)

[0724] Since the distance Δ1_(op)=(l2−14 l₁) is restricted to a relatively small region of the transdiaphragm flow duct 1=(l₀−l3), the proportion of the bifurcations, F_D(ρ_m,m), in the specific total force of a Diaphragm*, F_D,x, may be very high. The following therefore applies to the case F_D(ρ_T, A_T)=F_D(ρ_m,m) (see next page):

[0725] F_D,x(ρ_T,A_T)<F_D,x(ρ_m,m)  (76)

[0726] since

[0727] F_D,x(ρ_T,A_T)<F_D(ρ_T,A_T)*x₃/(l_0−l3)  (77)

[0728] and

[0729] F_D,x(ρ_m,m)<F_D(ρ_m,m)*x₃/(l₂−l₁) (78)

[0730] or for a plurality of bifurcations n_Bper flow duct

[0731] F_D,x(ρ_m,m)<ΣF_D(ρ_m,m)*x₃/Σ(l₂−l₁)

[0732] Whilst the technical solutions for F_D(ρ_T.A_T) via diffusers and/or diffuser-nozzle transitions favor the flow worm in the diffuser cone, optimizing the total force F_Drequires (design) technical solutions which possibly rule out or restrict the optimized solutions for F_D(ρ_T,A_T) and/or favor those solutions which require a compromise between F_D(ρ_T,A_T) and the further terms in equation (75) (cf. Technical Solutions in the preceding and following chapters). The proportion of F_D(ρ_m,m) in F_D,xis therefore potentially relatively high and, depending on the product (to be deposited) and product (to be deposited) and product form, requires suitable combinations of the claimed Diaphragm* elements and of the resulting ratio F_D(r_m,m)/F_D(r_T,A_T) (cf. next chapter).

[0733] For arriving at the Diaphragm* design, all the quantities in equations (54), (55), (72) and (73) can be determined precisely by means of experiments or calculations. It may be pointed out that the gradient δP/δx in equations (54) and (72) represents the local pressure gradient, for example between the inlet and the outlet of the transdiaphragm gas flow into the next following chamber and, in light of the large hydrodynamic pressure differences in relation to the environment, is not to be confused with the macroscopic pressure gradient dp/dx between two adjacent (conventional) chambers.

[0734] In a Diaphragm* with bifurcations and a corresponding backflow (cf. above), contrary to the conventional principle of momentum for flowing media, F_Ddoes not correspond to the difference between the integral exit and entry pulse force per Diaphragm* element, but only to the difference between the exit pulse force into the original chamber minus the entry pulse force into the flow duct. The bifurcation part flow forms a quasi-infinite circular flow for the buildup of dp/dx and of the resulting transdiaphragm suction force F_suc, as long as vapor follows up from the sources of a chamber. The continuous supply of pulse force into the (original) evaporation chamber via the bifurcation flows is an energy source which is taken into account in the temperature control of the corresponding chamber, including its sources. The corresponding temperature control also includes, for example for relatively high α_Bvalues, the possibility of (if appropriate local) cooling. Since the throughput (conveying flow) through the Diaphragm* upstream of the deposition chamber controls the throughput of the process as a whole and requires a local suction gradient for accelerating the corresponding transdiaphragm vapor conveyance, the suction flow drives the process even when material conveyance is controlled from a part of the evaporation chambers without bifurcations (cf. further below).

[0735] The characteristic quantity which links the propulsion force of the process (i.e. the pumping speed S) to the Diaphragm* before deposition, as the structural part controlling the overall throughput rate q_v, is the throughput rate effectively discharged per flow duct q_v.D(cf. Diaphragm*—type 2, FIRST PART of the invention). For the given Σ, F(S), T and a given Diaphragm* configuration, a constant value q_v,0,i=q_v,0,D+n_B*q_v,0,Bper flow duct is obtained. Thus, this value is set during the starting phase of the process, for a given pumping speed S, at different paths dT and dm_B(e.g. by closing the apertures, dm becomes=to 0 and then also dm_Bbecomes=to 0, see EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) or, for a given Diaphragm design dm_B, at different paths dS and dT (e.g., dT=0 for opening the evaporation sources after the setting of all the operating temperatures). It becomes possible for the effective throughput rate q_v,0,Dto be proportional to the pumping speed S, and genuine process control of a vapor deposition process becomes possible for the first time in this way.

[0736] For a given pumping speed, q_v,0,Dor q_v,Dis the higher, the lower F_Dis, and vice versa. Consequently, F_Dis uncoupled from the pumping speed S and the resulting exit pulse force of the evacuation part flow (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995). q_v,0,Dor q_v,Dis not an explicit constituent of F_Din equations (72) and (73), i.e. the force F_Dof a bifurcation-controlled porous diaphragm corresponds to the total differential of the principle of momentum for flowing gases in the flow duct with the throughput rate q_v,0, but not the effective throughput rate q_v,0,D, as a variable. The physical factors contributing substantially to the force of the Diaphragm* are, therefore, here:

[0737] 1. the difference in the pulse forces before entry into the bifurcation region or bifurcation regions and in the bifurcation flow thereafter, for which the propulsion force is given by the pressure gradient (δp/δx) (S), the amount of which is controlled by the bifurcation parameters α, (x₂−x₁), etc.

[0738] 2. the resulting state difference (v,p,ρ) between the gas quantity introduced into the flow duct and evacuated into the next following chamber and the resulting increment to 1.

[0739] 3. the difference between the total difference in the pulse forces, resulting from 1. and 2., on the one hand, and the (hydrodynamic) pressure and speed losses as a result of friction, turbulences, etc., i.e. F_F,0), on the other hand.

[0740] The following detailed explanation of equations (71)-(73) proves this uncoupling of F_Dand q_v,Dand consequently of S. The equation already mentioned

[0741] q_vq_v,iq_v,D+n_Bq_v,B=q′_v+n_Bαq_v  (79)

[0742] and

[0743] q_v=_x0^∫x2[δq_v/δx]dx=_x2^∫x3[q_v,D/δx]dx+n_B*_x2^∫x0δq_v,B/δx]dx  (80)

[0744] apply to a Diaphragm* which builds up the vapor reservoir in a (conventional) evaporation chamber by utilizing a, for example, symmetrical pair of bifurcations (with n_B=2) (cf. FIG. 45).

[0745] Substitution of equation (79) yields the state equation for transdiaphragm pulse preservation adapted to the bifurcation problem (cf. equation (72)): $\begin{array}{cc}\begin{array}{c}\sum F_0=F_P-F_F-F_D={\int }_{\mathrm{x0}}^{\mathrm{x2}}[\rho q_{v,i}/A*\left(\delta q_{v,i}/\delta x\right)-\left(\rho q_{v,i}^2/A^2\right)*\\ \left(\delta A/\delta x\right)]dx+{\int }_{\mathrm{x1}}^{\mathrm{x2}}\left[q_{v,i}^2/A*\left(\mathrm{\delta \rho }/\delta x-{\alpha }_B\rho /\left(x_2-x_1\right)\right)\right]dx\\ ={\int }_{\mathrm{x2}}^{\mathrm{x3}}\left[\rho q_{v,D}/A*\left(\delta q_{v,D}/\delta x\right)-\left(\rho q_{v,D}^2/A^2\right)*\left(\delta A/\delta x\right)\right]dx+\\ n_B*{\int }_{\mathrm{x2}}^{\mathrm{x0}}\left[\rho q_{v,B}/A*\left(\delta q_{v,B}/\delta x\right)-\left(\rho q_{v,B}^2/A^2\right)*\left(\delta A/\delta x\right)\right]dx\end{array}& \left(81\right)\end{array}$

[0746] The following applies in a similar way to the conventional flow duct (cf. equation (71)):

[0747] q_v=_x0^∫x2[δq_v,i/δx]dx=_x2^∫x3[δq_v,i/δx]dx  (82)

[0748] and the substitution of equation (82) in equation (71) yields: $\begin{array}{cc}\begin{array}{c}\sum F_0=F_P-F_F={\int }_{\mathrm{x0}}^{\mathrm{x3}}\left[\rho q_v/A*\left(\delta q_v/\delta x\right)\right]dx\\ ={\int }_{\mathrm{x0}}^{\mathrm{x2}}\left[\rho q_{v,i}/A*\left(\delta q_{v,i}/\delta x\right)\right]dx\\ ={\int }_{\mathrm{x2}}^{\mathrm{x3}}\left[\rho q_{v,i}/A*\left(\delta q_{v,i}/\delta x\right)\right]dx\end{array}& \left(83\right)\end{array}$

[0749] The difference between equations (83) and (81) gives the precision of the force of a Diaphragm* with bifurcation-controlled transdiaphragm material conveyance $\begin{array}{cc}\begin{array}{c}\begin{array}{c}{F}_D\left(A_m,{\rho }_m,m\right)\end{array}={\int }_{\mathrm{x1}}^{\mathrm{x2}}\left[q_{v,i}^2/A*\left({\alpha }_B\rho /\left(x_2-x_1\right)-\delta \rho /\delta x\right)\right]dx+\\ {\int }_{\mathrm{x0}}^{\mathrm{x2}}\left[\left(\rho q_{v,i}^2/A^2\right)*\left(\delta A/\delta x\right)\right]dx\\ ={\int }_{\mathrm{x2}}^{\mathrm{x3}}[\rho /A*\left[q_{v,D}\left(\delta q_{v,D}/\delta x\right)-q_{\mathrm{vi}}\left(\delta q_{v,i}/\delta x\right)\right]-\\ \left(\rho q_{v,D}^2/A^2\right)*\left(\delta A/\delta x\right)]dx+\\ n_B*{\int }_{\mathrm{x2}}^{\mathrm{x0}}[\rho q_{v,B}/A*\left(\delta q_{v,B}/\delta x\right)-\left(\rho q_{v,B}^2/A^2\right)*\\ \left(\delta A/\delta x\right)]dx\end{array}& \left(84\right)\end{array}$

[0750] It is obvious that the definition of F_D(A_m,ρ_m,m)=fn(q_v,D) also includes an apparent value

[0751] _x2^∫x3[ρ/A*[−q_v,i(δq_v,i/δx)]dx

[0752] (cf. right-hand side of equation (81), which exists only because the other terms exist and which makes a contribution to F_D(A_m,ρ_m,m) (in the nonstationary state), although q_v,idoes not occur in the evacuation flow (cf. turbulence developments at bifurcations, below).

[0753] In the stationary (and nonstationary) state, q_v,Drises with a decrease in force F_D(A_m,ρ_m,m) and a falling bifurcation flow pulse, etc. From a design point of view, the predominant part played by the factor α, the absolute cross sections and the variations in cross section in the section x₂→x₃(evaporation flow q_v,D) and x₂→x₀(bifurcation flow q_v,B) is obvious, δρ being a Diaphragm*-specific variable with a critical influence on the resulting suction effect which drives the process as a whole and controls q_v^max. In the abovementioned process, the Diaphragms are employed in such a way that falling δρ(S) values are compensated by rising throughputs Σq_v,D(S) and by rising flow speeds and operational fluctuations in the conveying flow can thereby be compensated.

[0754] For asymmetric bifurcations (and pairs of bifurcations, cf. next chapter), equation (79) changes to

[0755] q_v=q_v,i+_βi=1Σ^nB(q_v,D(β_i)+q_v,B(β_i))  (85)

[0756] and equations (80)-(84) change correspondingly, here β_ibeing the (control) variable of the number n_β of bifurcations of a transdiaphragm flow duct and l<n_b<00 (cf. EP-Application94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995). The two main bifurcations are those in which the (i) cross-sectional sums of the branching ducts are identical to the cross section of the basic flow influx (and efflux), i.e.

[0757] A_B+A_D=A_i

[0758] (cf. FIG. 46 showing diagram of 46a-46cthe combining and 46cthe branching-off of a flow with 46athe same direction of flow of the two flows, 46ba particular angle α′_Bobtained from the relation A_B+A_D+A_i, and 46cat an angle A_B+A_D>A_i, in which A_D=A_ihere for the opposite problem of the convergence of two flows), and (ii) those in which

[0759] A_B+A_D>A_i

[0760] applies, in which A_D=A_i(i.e. FIG. 46c). The operative loss figures are essentially a function of the branching angle directly at the bifurcation point,α′_B, between the bifurcation backflow duct and transdiaphragm flow duct at the branch point (i.e. not the entire bend which is covered altogether by the bifurcation backflow duct), and the ratios of the corresponding flow speeds, i.e. v_B/v_iand v_D/v_i, as well as the resulting(local) conveying flows q_v,B/q_v,iand q_v,D/q_v,i. FIG. 47 shows flow spectra at a bifurcation for the branching-off of a part flow quantity with flow ratios at a bifurcation of the second type for q_v,B<q_v,i(top), q_v,B>q_v,i(middle) and q_v,B=0 (bottom). For q_v,B<q_v,i, a dead flow (flow vortex) forms directly in front of the fork tip after the flow has entered the bifurcation backflow duct, said dead flow being, inter alia, a consequence of the diffuser effect (see above) at this point and the associated local pressure drop (i.e. positive pressure gradient). Breakaways of this vortex lead to nonstationary flow states, i.e. oscillations in q_v,B. For q_v,B>q_v,i, this vortex forms in the evacuation duct (middle of FIG. 47), with the possibility of nonstationary states at that particular point, whilst the vortex for q_v,B=0 is located approximately in the middle of the vortex position of the two preceding cases. The corresponding loss figures contain the shock influence as a result of diffuser widening, the bend losses in the bifurcation backflow duct (cf. next chapter) and, where appropriate, a residual value for the bifurcation backflow duct, said residual value occurring as a result of the increase in the flow energy in the evacuation flow due to introduction of part of the flow boundary layer into the bifurcation backflow duct. The loss figures of bifurcations ζ_Bare therefore, as a rule, expressed as relative values in relation to the flow conditions in the inflow duct with v_i, q_v,iand A_i:

[0761] ζ_B=ζ_P,B+ζ_P,D+ζ_Erw  (86)

[0762] the following applying to the bifurcation backflow:

[0763] ζ_P,B=A′[1+(v_B²v/²)−2(v_B/v_i)cos α]−K′_B(v_B/v_i)²  (87)

[0764] or

[0765] ζ_P,B=A′[1+[(q_v,B/q_v,i)*(A_i/A_B)]²(q_v,B/q_v,i)*(Ai/A_B)cos α]−K′_B(q_v,B/q_v,i)(A_i/A_B)²  (88)

[0766] with

[0767] K′_B=(1−2μ/μ²)sin ²α

[0768] and

[0769] and μ=the flow contraction coefficient (for bifurcations of the type A_D=A_i, K′_B=0, and A′=1 for v_B/v_i</=0.8 and A′=0.9 for v_B/v_i>0.8 (n.b. v_Bis, here, the speed at the bifurcation point, not at the outlet of the backflow). For bifurcations of the type A_B+A_D=A_i, K′_Bis closely dependent on a and is 0.04 for α=15°, 0.16 for α=−30°, 0.36 for α=45°, 0.64 for α=60° and 1 for α=90°. In the evacuation flow duct, the loss figures in the case A_B+A_D>A_iare calculated according to:

[0770] ζ_P,B=0.4[1−(v_D²/v_i²)]  (89)

[0771] and, in the case A_B+A_D=A_i, are represented in FIG. 48 showing loss figures ζ_P,Band ζ_P,Das a function of the flow speed ratio v_B/v_iand v_D/v_ifor the branching-off of a part flow quantity via bifurcations in the case of different flow rotation angles α′_B(=α here), where A-D: A_B+A_D=A_i, A=15°<α<60° for all ratios A_B/A_iand for α=90° for A_D/A_i-ratios ranging from 0 to 0.4 and >0.8; B,C,D: all at α=90° and B: A_D/A_i=0.5; C: A_D/A_i=0.6; D: A_D/A_i=0.7; E: 15<α<900 for A_B+A_D>A_i). Furthermore, for Re numbers >10⁴, the loss figure:

[0772] ζ_Erw=φ_Diff[1−(A₀/A₁)²*(1−(q_v,B/q_v,i)²*(A_i/A_B)²+ζ_F  (90)

[0773] must be added to ζ_P.D, A₀and A₁being the cross sections of the corresponding diffuser (see above), φ_diffbeing the corresponding shock coefficient (see FIG. 49 showing loss figures ζ_widand ζ_F(cf. Equation (90) for a), b) conical and c), d) rectangular diffusers as a function of the diffuser angle α, here ζ_widbeing obtained from the relation ζ_wid=φ_diff(1−A₀/A₁)²and φ_diff=k*tg(α/2)* tg(α/2)^¼. The constant k is for 49a, 49bwith homogeneous inflow: 3.3 in the reference interval 0° to 40° and for 49c, 49d4.0 in the reference interval 0° to 25°, 49eflattened diffusers with f)h) for k=3.2. Reference interval of the formula for φ_diffin the range of 0° to 25°. 49fgives the values for the side ratio a₀b₀=0.5, 49gfor a₀b₀=1.0 and 49hfor a₀b₀=1.5; D_H=circumference) and ζ_Fbeing the friction loss figure (see below). Since ζ_Bis independent of the ratio A_B/A_Iand A_D/A_i, the corresponding coefficients are given as a function of the ratio v_B/v_iand v_D/v_ias well as q_v,B/q_v,iand q_v,BD/q_v,i. Rounding the bifurcation edges (FIG. 50 showing rounded bifurcation edges and/or bifurcation duct inlets with 50dr/b₁=1 and α′_B=90° and the resulting loss figures for 50e. the bifurcation duct (ie. ζ_P,B) and 50ffor the evacuation duct (ie. ζ_P,D) as a function of the conveying quantity ratio q_v,B/q_v,iand FIG. 94/PCT Application) leads to a sharp reduction in ζ_D, since the corresponding vortices are reduced, particularly when these are associated with a bifurcation backflow duct which tapers in a nozzle-like manner and/or is bent (rounded) (FIG. 51 showing a comparison of the effect of rounded bifurcation edges (cf. FIG. 50) and bifurcation duct branches tapering in the manner of an (ultrasonic) nozzle, ie. contracting (case No. 3) on the loss figure ζ_P,Bfor α′_B=45°, 60° and 90° (n.b. cases No. 1 and No. 2 correspond to the situation shown in FIG. 50b)), since both the flow speed directly at the branch, the effect of the angle of rotation α′_B,1and the resulting flow vortices are reduced by means of these measures. These measures are initiated in dovetail-like bifurcations (FIG. 52 showing symmetrical dovetail with α′=90°, here a rectangular flow duct cross section), as in the solutions e.g. from EP 94111991.9, FIG. 40, and PCT/EP95/02882 of Jul. 19, 1995, FIG. 94.

[0774] The following is employed in connection with the abovementioned vapor conveyance and deposition process:

[0775] 1. General Bifurcation Properties

[0776] Solutions:

[0777] 1. Bifurcations for the abovementioned porous diaphragm Diaphragm*, characterized in that the cross-sectional area ratios are in the range from 0.05*A_i<(A_B+A_D)</=50*A_i, preferably 0.1*A_i<(A_B+A_D)</=10*A_iand/or the ratios of the corresponding hydraulic ratios are in the range from 0.05*A_i<(A_B+A_D)≦50*A_i, preferably 0.1*A_i<(A_B+A_D)≦10*A_iand/or the ratios of the corresponding hydraulic diameters are 0.05*D_H,i<(D_H,B+D_H,D)≦50*D_H,i, preferably 0.1*D_H,i<(D_H,B+D_H,D)<10*D_H,iand/or

[0778] 2. Bifurcations according to 1., characterized in that the flow rotation angle at the bifurcation point is in the range of 0.1°<α′_B≦90°, preferably in the range of 0.5°<α′_B<60°, and/or

[0779] 3. Bifurcations according to 1. and/or 2., further characterized in that the ratios of the conveying flow quantities are 0.01<q_v,B/q_v,i<1.0, preferably in the range of 0.1<q_v,B/q_v,i<0.8, and the corresponding loss figures ζ_P,Bare in the range of −10 to +110, and/or

[0780] 4. Bifurcations according to one or more of solutions 1. to 3., further characterized in that the ratios of the conveying flow quantities are 0.01<q_v,D/q_v,i<1.0, preferably in the range of 0.1<q_v,D/q_v,i<0.8, and the corresponding loss figures ζ_P,Dare in the range of −100 to +10, and/or

[0781] 5. Bifurcations according to one or more of solutions 1. to 4., further characterized in that the relative bend radius at the bifurcation point having the diameter d¢_Bis in the range of 0.01<r′_B/d′_B≦50, preferably in the range of 0.1<r′_B/d′_B≦10 and/or

[0782] 6. Bifurcations according to one or more of solutions 1. to 5., further characterized in that the bifurcation nozzle angle δ′_B=α′_B−α′_B,1is in the range of 0.01° to 30°, preferably in the range of 0.1° to 15°, and/or

[0783] 7. Bifurcations according to one or more of solutions 1. to 6., further characterized in that the flow ducts of of the bifurcation have concentric cross sections, and/or

[0784] 8. Bifurcations according to one or more of solutions 1. to 7., further characterized in that the flow ducts of the bifurcation have rectangular cross sections.

[0785] Referred is also to FIG. 53 showing 53aV-shaped, 53bT-shaped and 53cmultiple bifurcation with n′_B=2, the latter with α′_B=30° and → combining and ← separation of the flows (n.b. 53bshows the situation, indicated in FIG. 17, of a meander-like cooling duct.

[0786] 2. Optimum utilization of the pulse force of flowing media in the flow duct becomes possible for the purpose of the abovementioned vapor deposition process by adapted nozzle transition. FIG. 54 showing flow profiles before the entry of the flow into a bifurcation with 54b, 54cin the suction flow mode as a result of the shadings shown in 54a(hatched area, A+P: direction to deposition and pump; D: direction to vapor source) and 54din the pressure flow mode. β_D: integral deflection angle of the bifurcation backflow relative to the transdiaphragm (central) flow. 54e: segmental design (see next section).

[0787] Solution:

[0788] 13. Bifurcation structural parts for the abovementioned diaphragm according to one or more of solutions 1. to 12., for the local promotion of the suction effect and the control possibilities via the bifurcation backflow, characterized further by improved transdiaphragm fluid mechanics in comparison with the conventional flow duct, such that bifurcations for the vapor backflow are combined with design measures and structural parts, such as geometric elements with CF coefficients of 0.01 to 0.5 (see EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995), with diffusers (see EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and above), diffuser/nozzle combinations (see EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and above and following chapters and FIG. 54e), ultrasonic and Laval nozzles (see following chapters and FIG. 54e) and, for example, bends (see following chapters and FIG. 54e) or bent diffusers (see above and following chapters and FIG. 54e) and bent diffuser/nozzle combinations (see above and following chapters and FIG. 54e).

[0789] 3. Bifurcations and nozzles (in the conventional flow duct)

[0790] Variations in cross section with or without negligible temperature gradients for promoting the bifurcation backflow are achieved, inter alia, by means of nozzles in the trandiaphragm flow duct upstream of bifurcations. Irrespective of the type of nozzle form used, the contraction of the flow cross section leads to an increase in the flow speed and consequently in the corresponding hydrodynamic (dynamic) pressure. Consequently, for a given orifice diameter (e.g. (x₂−x₁) or d_Bor d_B=x₂−x₁) of a bifurcation backflow duct, the backflow pressure p_Band the pressure ratio p_B/p_I(p_I: total pressure on inflow into the transdiaphragm flow duct) and therefore the (partial) force of a Diaphragm*, F_D(ρ_m, A_m, m) increase. Contractions in cross section in the transdiaphragm flow duct for promoting a bifurcation backflow are therefore a fundamental structural element of a Diaphragm*, in order to achieve a transdiaphragm pressure gradient in the case of negligible heat exchange with (and temperature effects in) the transdiaphragm flow. Since a transdiaphragm pressure gradient upstream of the vapor deposition chamber is necessary for controlling the process as a whole, bifurcations and consequently transdiaphragm flow duct contractions are a basic integral part of the abovementioned vapor deposition process.

[0791] If no further measures other than nozzles are carried out in order to optimize transdiaphragm fluid mechanics (e.g. heating, such that a negative temperature gradient is built up, use of diffusers, etc. cf. above),the form and type of the nozzle used for promoting the bifurcation backflow are particularly important. In this case, the selection of the nozzle form depends primarily on the propulsion force operative locally in the bifurcation region, i.e. on the way in which the propulsion force of the process as a whole takes effect for transdiaphragm material conveyance in the bifurcation region.

[0792] Solution:

[0793] 14. Bifurcations according to one or more of solutions 1. to 13., further characterized in that for vapor conveyance in the region of the bifurcations, in the case of pressure flow drive, the bifurcations are fitted into an ultrasonic nozzle or into an ultrasonic nozzle-like nozzle form (FIG. 55ashowing nozzle and backflow duct variations for combination with bifurcations used in the abovementioned process, here laval nozzle with characteristic quantities), in the case of vapor conveyance and its acceleration by means of a suction flow, i.e. drive (“suction”), by vacuum in the target chamber, said bifurcations are fitted into Laval nozzles or Laval nozzle-like duct sections (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) for the purpose of contracting the flow cross section (FIG. 55bshowing nozzle and backflow duct variations for combination with bifurcations used in the abovementioned process, here ultrasonic nozzle with characteristic quantities), specifically in the region of the Laval nozzle cross section (FIG. 55cshowing correspondingly preferred bifurcation type) (cf. next section), in which 0.01<d₁/d₂<100 and 0.1<l₁/l₂<10 (cf. FIG. 55a) for Laval nozzles and 1.1<d₁/d₂<100 and 0.3<1/d₂<10 for ultrasonic nozzles (cf. FIG. 55b).

[0794] The continuous widening of the nozzle cross section on the suction side of the Laval nozzle increasesthe suction effect on the transdiaphragm vapor flow before passage through the Laval nozzle cross section of diameter d₁in relation to comparable vapor flows before leaving the ultrasonic nozzle outlet having the same diameter d_U(i.e. d₁=d_U), since, in a similar way to the flow conditions in a diffuser, discontinuous widenings in cross section having a nonrounded transition from the (concentric) flow duct into the diffuser region with an opening angle δ (e.g. particularly in the case of high δ values, such as in the case of 90°<δ<360°) are associated with greater turbulences than in the case of a continuous transition from the (concentric) flow duct into a diffuser having the same opening angle (cf. FIG. 56 showing effect of the rounding of a flow duct edge on the development of flow vortices (turbulences, see SW) for δ₁=δ₂, Re₁=Re₂, d₀(1)=d₀(2), v₁=v₂.). In view of this, a freestanding outlet of the ultrasonic nozzle, i.e. a nozzle end without transition into another form or into another element of the transdiaphragm flow duct (cf. FIG. 55b), forms an opening angle of 360° and therefore a potential source of high turbulence development (flow vortices) which diminishes the suction effect, because the flow is greatly disturbed downstream of the orifice, but at all events, under comparable flow conditions, is reduced to a greater extent than when a Laval nozzle outlet is used.

[0795] Solution:

[0796] 15. Bifurcations according to one or more of solutions 1. to 14., further characterized in that the preferred location of the at least one bifurcation backflow duct within the Laval nozzle is in the region of the Laval nozzle cross section having the diameter of d₁or is in relatively close proximity thereto (FIG. 55dcorrespondingly preferred bifurcation type), and the preferred location of the at least one bifurcation backflow duct in the ultrasonic nozzle is located, where appropriate, directly at the outlet (having the diameter d_u, see above) or in its immediate vicinity (FIG. 55efront view of the inflow sides for ultrasonic nozzle with 2 bifurcations), the design possibilities of the bifurcation backflow duct comprise branches at segments of the cylindrical nozzle circumference which can be located opposite one another, in the case of pairs of bifurcations (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995), symmetrically (FIG. 55fshowing Laval nozzle with 3 symmetrically arranged bifurcations) and, in the case of more than two bifurcations per cross section, symmetrically or asymmetrically (FIG. 55g4 asymmetrically arranged bifurcations with secant lengths S_i<S₂<S₃<S₄,) in relation to the central nozzle axis, or all the segments are closed to form an annular bifurcation (on inflow) which then, in an allround backflow or annular duct, returns the bifurcation flow into the original chamber (FIG. 55hshowing any nozzle with a continuous annular backflow duct from the bifurcation as far as the backflow outflow; D₀=diaphragm surface; d₁=see c); d₁=entry diameter; RAK=backflow duct exit slit), this allround backflow or annular duct being capable of narrowing and/or widening into annular duct segments via further bifurcations and thereby of manipulating the backflow speed and the outflow pressure p_B, for the coarse and fine adjustment of which apertures are, where appropriate, employed (cf. FIG. 55ishowing front view of the inflow sides whilst the annular backflow duct contracts (as a whole) toward the backflow outflow; BR=bifurcation ring; KVE=duct taper ring element).

[0797] 4. Nozzle Selection

[0798] The fundamental difference between (i) a Diaphragm* that contains only of nonbranched flow ducts (e.g. diffusers, diffuser/nozzle combinations, bends, bend combinations, etc., cf. above and following chapters) and (ii) a Diaphragm* with whatever type of bifurcations is in the degrees of freedom of the propulsion forces operative locally per transdiaphragm flow duct. Transdiaphragm material conveyance in the Diaphragm* of type (i) is driven preferably either a) only by a (transdiaphragm) pressure flow or b) only by a (transdiaphragm) suction flow. By contrast, transdiaphragm material conveyance in Diaphragms* with bifurcations (i.e. type (ii)) obtained by the branching-off of a part flow can be accompanied by a local propulsion force change, without the flow speed at the same time being reduced significantly. A propulsion force change without the branching-off of a part flow, but, for example as a result of friction, in contrast involves significant flow regions in the transdiaphragm flow duct with a flow speed toward 0 and contradicts the premises of the abovementioned vapor deposition process. It may be pointed out once again that transdiaphragm material conveyance driven locally by pressure does not contradict the maxim of the process as a whole, i.e. material conveyance, dependent on the pumping speed and driven by the suction flow, from the evaporation source as far as deposition, since, after the intermixing of all thecomponents has been concluded in a plant unit asssigned, where appropriate, specially for this (cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995 and chapter 10, point (vi) in FIRST PART of the invention), i.e. before deposition, transdiaphragm material conveyance is controlled by a suction flow and this suction flow remains speed-determining for the process as a whole, even when the transdiaphragm material conveyance of individual components, for example into the mixing chamber, is driven by a pressure flow (for example, by overpressure in the case of evaporating components having high vapor pressures, such as Mg). This aspect is particularly important for selecting the type of respective flow duct outlets (for example, trumpet-like outlets, a variant of the Laval nozzle outlets, cf. EP-Application 94111991.9, Aug. 1, 1994, and PCT Application PCT/EP95/02882 of Jul. 19, 1995) a transdiaphragm flow duct, in which the vapor flow is accelerated, (for example, for the purpose of branching off via a bifurcation) (cf. further above and next chapters).

[0799] Solution:

[0800] 16. Bifurcations according to one or more of solution 1. to 15., further characterized in that the transdiaphragm pressure flow of individual evaporation units possesses, per flow duct, a series of ultrasonic nozzles of the number 1</=n_U<20 which in each case close off a specific section (e.g. diffuser, see FIG. 57ashowing combination of three diffusers “D” with two ultrasonic nozzles “Ü” as transdiaphragm flow duct variants, n.b. dimension ratios chosen arbitrarily (as in all the other illustrations)) of the flow duct, whilst, in the case of a transdiaphragm suction flow, a corresponding series of Laval nozzles of the number 1<n_L<20 is obtained and the individual segments of the flow ducts assume the form of a thrust tube (see FIG. 57bshowing combination of three diffusers “D” with two Laval nozzles “L” as transdiaphragm flow duct variants, n.b. dimension ratios chosen arbitrarily (as in all the other illustrations)), as in the preceding Figures, the number of nozzles and the characteristic relative dimensions, for example in FIG. 57 including the direction of the central flow axis, being selected arbitrarily and there being understandably the possibility of also combining both nozzle forms in a nonbranched transdiaphragm flow duct, and it being possible to use within and/or at the end of pressure-driven transdiaphragm material conveyance (i.e. flow duct) a Laval nozzle, of which the advantage in terms of fluid mechanics over an ultrasonic nozzle under the same flow conditions remains, however, restricted to a (local) braking of the transdiaphragm flow before entry into the next diaphragm unit or plant unit, whereas the use of an ultrasonic nozzle in transdiaphragm material conveyance driven by suction flow (i) diminishes the suction effect on account of the development, described further above, of turbulences in comparison with a flow duct having corresponding Laval nozzles (or a corresponding Laval nozzle-type) outlet) and consequently (ii) the specific productivity contribution of the corresponding flow duct to the Diaphragm* under the same flow conditions.

[0801] By contrast, the branching-off of transdiaphragm part flow quantities via bifurcations allows:

[0802] 1. possibilities of variation in the transdiaphragm nozzle combination, diffuser/nozzle combinations, etc. (cf. further below) and the resulting locally operative propulsion forces for transdiaphragm material conveyance in the flow duct (where appropriate central in the case of multisided bifurcations) and consequently

[0803] 2. additional possibilities for manipulating the resulting vapor states and vapor deposition conditions in the following vapor units, including the state conditions of the bifurcation backflow itself, and therefore the (where appropriate, nonstationary) regulating quantities of corresponding evaporation chambers and their evaporation sources.

[0804] For successful bifurcation backflow, the total pressure in the central flow duct upstream of the branch (for example, on entry into the (if appropriate, central) flow duct, p_I) must be higher than the pressure of the bifurcation backflow on inflow into the original evaporation chamber, p_B, i.e.