Optimal write conductors layout for improved performance in MRAM

[0002] The present invention relates generally to an optimal write conductor layout in a magnetic random access memory (MRAM). More specifically, the present invention relates to a write conductor layout wherein a width of a write conductor is made less than a width of a data storage layer and the width of the write conductor is contained entirely within the width of the data storage layer.

[0003] A typical MRAM device includes an array of memory cells. Word lines extend along rows of the memory cells, and bit lines extend along columns of the memory cells. Located at a cross point of a word line and a bit line, each memory cell stores a bit of information as an orientation of a magnetization. The orientation of magnetization of each memory cell will assume one of two stable orientations at any given time. These two stable orientations, parallel and anti-parallel, represent logic values of “1” and “0” The orientation of magnetization of a selected memory cell may be changed by supplying current to a word line and a bit line crossing the selected memory cell. The currents create magnetic fields that, when combined, can switch the orientation of magnetization of the selected memory cell from parallel to anti-parallel or vice versa. Because the word line and the bit line operate in combination to switch the orientation of magnetization of the selected memory cell (i.e. to write the memory cell), the word line and the bit line can be collectively referred to as write lines. Additionally, the write lines can also be used to read the logic value stored in the memory cell.

[0004] FIG. 1 illustrates a top plan view of a simplified prior art MRAM array 100. The array 100 includes word lines 130, bit lines 132, and memory cells 120. The memory cells 120 are positioned at each intersection of a word line 130 with a bit line 132. In many MRAM designs, the write lines (130, 132) are made the same width as the memory cell 120 as shown by a width dx for the bit lines 132 and a width dy for the word lines 130. Consequently, the memory cells 120 have rectangular dimensions dx and dy that are defined by the widths of the write lines (130, 132). Typically, the write lines (130, 132) are arranged in orthogonal relation to one another and the memory cells 120 are positioned in between the write lines (130, 132), as illustrated in FIG. 1b. For example, the bit lines 132 can be positioned above the memory cells 120 and the word lines 130 can be positioned below.

[0005] FIGS. 2athrough 2cillustrate the storage of a bit of data in a single memory cell 120. In FIG. 2a, the memory cell 120 includes an active magnetic data film 122 and a pinned magnetic film 124 which are separated by a dielectric region 126. The orientation of magnetization in the active magnetic data film 122 is non-fixed and can assume two stable orientations as shown by arrow M₁. On the other hand, the pinned magnetic film 124 has a fixed orientation of magnetization as shown by arrow M₂. The active magnetic data film 122 rotates its orientation of magnetization in response to electrical currents applied to the write lines (130, 132, not shown) during a write operation to the memory cell 120. A first logic state of the data bit stored in the memory cell 120 is indicated when M₁and M₂are parallel to each other as illustrated in FIG. 2b. For instance, when M₁and M₂are parallel a logic “1” state is stored in the memory cell 120. Conversely, a second logic state is indicated when M₁and M₂are anti-parallel to each other as illustrated in FIG. 2c. Similarly, when M₁and M₂are anti-parallel a logic “0” state is stored in the memory cell 120. In FIGS. 2band 2cthe dielectric region 126 has been omitted. Although FIGS. 2athrough 2cillustrate the active magnetic data film 122 positioned above the pinned magnetic film 124, the pinned magnetic film 124 can be positioned above the active magnetic data film 122.

[0006] The resistance of the memory cell 120 differs according to the orientations of M₁and M₂. When M₁and M₂are anti-parallel, i.e. the logic “0” state, the resistance of the memory cell 120 is at it highest. On the other hand, the resistance of the memory cell 120 is at its lowest when the orientations of M₁and M₂are parallel, i.e. the logic “1” state. As a consequence, the logic state of the data bit stored in the memory cell 120 can be determined by measuring it resistance. The resistance of the memory cell 120 is reflected by a magnitude of a sense current 123 (referring to FIG. 2a) that flows in response to read voltages applied to the write lines (130, 132).

[0007] In FIG. 3, the memory cell 120 is positioned between the write lines (130, 132). The active and pinned magnetic films (122, 124) are not shown in FIG. 3. The orientation of magnetization of the active magnetic data film 122 is rotated in response to a current I_xthat generates a magnetic field H_yand a current I_ythat generates a magnetic field H_x. The magnetic fields H_xand H_yact in combination to rotate the orientation of magnetization of the memory cell 120. In FIG. 3, the write lines (130, 132) are shown having the same widths (dx and dy) as the memory cell 120 as previously mentioned in reference to FIGS. 1aand 1b.

[0008] Ideally, both of the write lines (130, 132) should have widths (dx and dy) that are identical to their corresponding widths (dx and dy) on the memory cell 120. Accordingly, the bit line 132 should have a width W_CVin a vertical direction Y that is equal in width to a width W_DVin the vertical direction Y of the memory cell 120 as illustrated in FIG. 4a. Similarly, the word line 130 should have a width W_CHin a horizontal direction X that is equal in width to a width W_DHin the horizontal direction X of the memory cell 120 as illustrated in FIG. 5a.

[0009] However, due to misalignment between the write lines (130, 132) and the memory cells 120 of the array 100 (see FIGS. 1aand 1b), the word lines 130 and the bit lines 132 can be offset from the memory cells 120. The misalignment can be caused by lithographic alignment inaccuracies that are inherent to the lithographic processes that are used to fabricate an MRAM device. In FIG. 4b, the bit line 132 is offset from the memory cell 120 by an offset δ. Similarly, in FIG. 5b, the word line 130 is offset from the memory cell 120 by an offset δ. The value of δ will depend on the lithographic process used to fabricate the MRAM device. For instance, a state-of-the-art value of δ can be on the order of 0.05 μm. That value for δ can be quite substantial for sub-micron size memory cells.

[0010] One disadvantage of the offset δ is a reduced magnetic field in those portions of the memory cell 120 that are not covered by the write lines (130, 132) as shown by dashed lines 141 and 145 that encircle an exposed edge of the memory cell 120 in FIGS. 4band 5brespectively. As a result, the combined magnetic fields from the write lines (130, 132) may not rotate the orientation of magnetization M₁from a parallel orientation to an anti-parallel orientation or vice-versa during a write operation that selects the memory cell 120.

[0011] Another disadvantage of the offset δ is that a portion of the write lines (130, 132) is positioned outside the width of the memory cell 120 as shown by cross-hatched regions 143 and 147 in FIGS. 4band 5brespectively. Consequently, the magnetic field generated by those portions is mainly wasted and cannot contribute to rotating the orientation of magnetization M₁. Additionally, in extreme cases, the portion of the magnetic field produced by the double-hatched regions 143 and 147 can interfere with unselected bits of neighboring memory cells (not shown) thus causing data corruption of already written information in those neighboring memory cells.

[0012] Moreover, the magnitude of the currents I_xand I_ythat generate the magnetic fields H_yand H_xrespectively, are insufficient to write the memory cell 120 because a portion of the magnetic fields H_yand H_xis wasted. In most high density MRAM designs, current and magnetic fields are very precious objects and every attempt should be made to make efficient use of the write currents I_xand I _y, to lower power consumption, and to efficiently couple the magnetic fields H_yand H_xwith the active magnetic data film 122.

[0013] Therefore, there is a need for a layout structure for current carrying conductors in a MRAM memory that eliminates misalignment between a data storage layer of a MRAM memory cell and the write lines that cross the data storage layer.

[0014] There is also a need for write lines that are contained within the width of the data storage layer so that the magnetic fields generated by the write lines are not wasted and are efficiently coupled with the data storage layer.

[0015] Additionally, there is a need to reduce power consumption in the MRAM memory cell by reducing the magnitude of the write currents necessary to rotate the orientation of magnetization of the data storage layer during write operations to the memory cell. For example, reduced power can result in a reduction in waste heat generated by an electronic device incorporating the MRAM memory. Moreover, for portable devices, it is desirable to reduce power consumption in order to extend battery life.

[0016] The above mentioned needs are met by the write conductor layout structure of the present invention. Misalignment between the write lines (i.e. a word line or a bit line) and the data storage layer is addressed by making the width of a write line narrower than the width of the data storage layer that is crossed by the write line. Additionally, the write line is positioned so that its width is entirely contained within the width of the data storage layer. The problems associated with leakage of the magnetic field, wasted magnetic field, and reduced coupling of the magnetic field with the data storage layer are also solved by the narrowed width of the write line and the position of the write line within the width of the data storage layer. Moreover, the narrowed width of the write line can produce a magnetic field of greater magnitude for a given current or the magnitude of the magnetic field necessary to rotate the orientation of magnetization of the data storage layer can be produced by a reduced magnitude of current thereby reducing power consumption.

[0017] Broadly, the present invention is embodied in a write conductor layout structure for a magnetic memory cell that includes a data storage layer having a first layer width in a first direction and a second layer width in a second direction. The data storage layer is positioned between a first conductor having a first width in the first direction and a second conductor having a second width in the second direction. The first and second conductors cross the data storage layer in the first and second directions respectively. The first width of the first conductor is less than the first layer width of the data storage layer and the first width of the first conductor is positioned so that the first layer width overlaps the entirety of the first width of the first conductor. Similarly, the second width of the second conductor is less than the second layer width of the data storage layer and the second width of the second conductor is positioned so that the second layer width overlaps the entirety of the second width of the second conductor. Moreover, the first conductor, the second conductor, or both the first and second conductors may be made less in width than their respective first and second layer widths.

[0018] In one embodiment of the present invention, the first and second widths can be selected to be less than their respective first and second layer widths by a process alignment offset. The process alignment offset can be based on an alignment tolerance of a lithographic process used in fabricating the MRAM device.

[0019] In another embodiment of the present invention, either one of the first and second conductors can be centered within its corresponding layer width, left-shifted within its corresponding layer width, or right-shifted within its corresponding layer width.

[0020] In one embodiment of the present invention, the first and second conductors can be the word line or the bit line (the write lines) of a MRAM device.

[0021] In another embodiment of the present invention, a magnitude of a first portion of a write magnetic field generated by a current applied to the first conductor is greater than when the first width is at least equal to the first layer width.

[0022] In one embodiment of the present invention, a magnitude of a second portion of a write magnetic field generated by a current applied to the second conductor is greater than when the second width is at least equal to the second layer width.

[0023] In another embodiment of the present invention, the position of the first width operatively couples a first portion of a write magnetic field with the data storage layer so that a magnitude of a current applied to the first conductor is less than when the first width is at least equal to the first layer width.

[0024] In yet another embodiment of the present invention, the position of the second width operatively couples a second portion of a write magnetic field with the data storage layer so that a magnitude of a current applied to the second conductor is less than when the second width is at least equal to the second layer width.

[0025] Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the present invention.

[0026] FIGS. 1aand 1bare top and profile views of a prior art MRAM array.

[0027] FIGS. 2athrough 2care profile and side views of a prior art MRAM memory cell illustrating an orientation of magnetization of active and reference magnetic films.

[0028] FIG. 3 is a profile view of a prior art memory cell, its write lines, and magnetic fields generated by currents flowing in the write lines.

[0029] FIGS. 4aand 4bare top plan views of a vertically oriented ideal prior art write conductor and memory cell layout and a misaligned prior art write conductor and memory cell layout respectively.

[0030] FIGS. 5aand 5bare top plan views of a horizontally oriented ideal prior art write conductor and memory cell layout and a misaligned prior art write conductor and memory cell layout respectively.

[0031] FIGS. 6 and 7 are top plan views of a write conductor layout structure according to the present invention.

[0032] FIGS. 8athrough 8care top plan views illustrating centered, left-shifted, and right-shifted vertical write conductor layout structures according to the present invention.

[0033] FIGS. 9athrough 9care top plan views illustrating centered, up-shifted, and down-shifted horizontal write conductor layout structures according to the present invention.

[0034] FIGS. 10athrough 10care a top plan view and cross-sectional views of first and second conductors that are narrower than a data storage layer according to the present invention.

[0035] FIG. 11 is a top plan view of a portion of a MRAM memory array incorporating a write conductor layout structure according to the present invention.

[0036] FIG. 12 is a plot of a prior art current switching curve and a current switching curve of a write conductor layout structure of the present invention illustrating a reduction in conductor current resulting from narrowing the width of a write conductor according to the present invention.

[0037] FIGS. 13aand 13bare top plan views of data storage layers having a polygon shape and an arcuate shape respectively and crossed by write conductors according to the present invention.

[0038] In the following detailed description and in the several figures of the drawings, like elements are identified with like reference numerals.

[0039] As shown in the drawings for purpose of illustration, the present invention is embodied in a write conductor layout structure for a magnetic memory cell. The write conductor layout structure includes a first conductor having a first width and a second conductor having a second width. A data storage layer is positioned between the first and second conductors and the data storage layer includes a first layer width in a first direction and a second layer width in a second direction. The first and second conductors cross the data storage layer in substantially the first and second directions respectively. The first width of the first conductor is preselected to be less than the first layer width and the first width is positioned relative to the first layer width so that the first layer width overlaps the entirety of the first width. The second width of the second conductor is preselected to be less than the second layer width and the second width is positioned relative to the second layer width so that the second layer width overlaps the entirety of the second width.

[0040] Advantages of the first and second widths being narrower than the first and second layer widths include but are not limited to: improved coupling of a write magnetic field with the data storage layer so that the write magnetic field is not wasted or reduced to due to misalignment between the data storage layer and the first and/or the second conductor; the first and/or the second widths are contained within their respective layer widths so that the aforementioned misalignment is eliminated; a leakage magnetic field that can interfere with nearby memory cells is reduced or eliminated by positioning the first and second widths within their respective layer widths; the narrowed width of the first and/or the second conductor can produce a magnetic field of greater magnitude for a given current; and the narrowed width of the first and/or the second conductor can generate the magnetic field necessary to rotate the orientation of magnetization of the data storage layer with a reduced magnitude of current thereby reducing power consumption.

[0041] In FIGS. 6 and 7, a write conductor layout structure 10 for a magnetic memory cell includes a first conductor 30 having a first width W_C1(see FIG. 6) and a second conductor 32 having a second width W_C2(see FIG. 7). A data storage layer 20 is operatively positioned between the first conductor 30 and the second conductor 32 (not shown) so that a write magnetic field (not shown) generated by both of the first and second conductors (30, 32) results in rotation of an orientation of magnetization of an active layer (not shown) of the data storage layer 20. Currents applied to the first and second conductors (30, 32) generate the write magnetic field during a write operation. The data storage layer 20 includes a first layer width W_D1in a first direction indicated by a dashed arrow V and a second layer width W_D2in a second direction indicated by a dashed arrow H. The first and second conductors (30, 32) cross the data storage layer 20 in substantially the first and second directions (V, H) respectively.

[0042] The first width W_C1of the first conductor 30 is preselected to be less than the first layer width W_D1and the second width W_C2of the second conductor 32 is preselected to be less than the second layer width W_D2. The first width W_C1is positioned relative to the first layer width W_D1so that the first layer width W_D1overlaps the entirety of the first width W_C1as illustrated in FIG. 6. The second width W_C2is positioned relative to the second layer width W_D2so that the second layer width W_D2overlaps the entirety of the second width W_C2as illustrated in FIG. 7.

[0043] For purposes of illustration, the first conductor 30 is positioned above the data storage layer 20 (see FIG. 6) and the second conductor 32 is positioned below the data storage layer 20 (see FIG. 7). However, the positions of the first and second conductors (30, 32) can be reversed. Additionally, the positions of the first and second conductors (30, 32) in relationship to the data storage layer 20 are illustrated separately in FIGS. 6 and 7 for purposes of clarity; however, the first and second conductors (30, 32) cross the data storage layer 20 as will be described below in reference to FIGS. 10athrough 10c.

[0044] Although FIGS. 6 and 7 illustrate the first conductor 30 with a vertical orientation in the first direction V and the second conductor 32 with a horizontal orientation in the second direction H, the above mentioned advantages to the write conductor layout structure of the present invention apply when the aforementioned vertical and horizontal orientations are reversed, i.e. the first conductor 30 can have a horizontal orientation and the second conductor 32 can have a vertical orientation. Moreover, the write conductor layout structure 10 of the present invention is not limited to horizontal and vertical conductor orientations, orientations other than horizontal and vertical are embraced by the principles of the present invention.

[0045] The data storage layer 20 can be a magnetoelectric device that includes but is not limited to a spin dependent tunneling device, a spin valve device, and a giant magnetoresistive device. Although the data storage layer 20 is illustrated herein as having a rectangular shape, the data storage layer 20 can have a shape that includes but is not limited to a rectangular shape, an arcuate shape, and a polygon shape.

[0046] FIGS. 13aand 13billustrate a polygon shaped data storage layer 21 and a arcuate shaped data storage layer 22 respectively. It should be noted that in FIGS. 13aand 13b, the first and second conductors (30, 32) cross their respective data storage layers in the first and second directions (V, H) and the first layer width W_D1and the second layer width W_D2are the maximum widths of the data storage layers in the first and second directions (V, H) respectively. For instance, in FIG. 13a, the first layer width W_D1is the maximum width of the data storage layer 21 in the first direction V and the first width W_C1is positioned relative to the first layer width W_D1so that the first layer width W_D1overlaps the entirety of the first width W_C1. Similarly, the second layer width W_D2is the maximum width of the data storage layer 21 in the second direction H and the second width W_C2is positioned relative to the second layer width W_D2so that the second layer width W_D2overlaps the entirety of the second width W_C2.

[0047] In one embodiment of the present invention, as illustrated in FIGS. 8athrough 8c, the first width W_C1of the first conductor 30 is preselected to be less than the first layer width W_D1of the data storage layer 20 in the first direction V by a first process alignment offset Δ₁. The first process alignment offset Δ₁can be a value determined by an alignment tolerance of a lithographic process used to fabricate an MRAM device incorporating the write conductor layout structure 10. For instance, if the alignment tolerance is 0.05 μm, then the first width W_C1can be less than the first layer width W_D1by Δ₁=0.05 μm or by some fraction or percentage of Δ₁. For example, if Δ₁=0.05 μm then the first width W_C1can be less than the first layer width W_D1by 80% of Δ₁(0.8*0.05 μm=0.04 μm); therefore the first width W_C1is 0.04 μm less in width than the first layer width W_D1. On the other hand, if Δ₁=0.05 μm then the first width W_C1can be less than the first layer width W_D1by 1¼ (i.e. 1.25) of Δ₁(1.25*0.05 μm=0.06275 μm); therefore the first width W_C1is 0.06275 μm less in width than the first layer width W_D1. In either case, the first width W_C1is narrower than the first layer width W_D1and the first layer width W_D1overlaps in its entirety the first width W_C1. The above examples also apply to Δ₂, the second layer width W_D2, and the second width W_C2.

[0048] The first width W_C1can have a substantially centered position within the first layer width W_D1as illustrated in FIG. 8a. In FIG. 8a, opposed edges 33 of the first conductor 30 are positioned inward of the first layer width W_D1by a distance equal to the first process alignment offset Δ₁÷2 so that the first width W_C1has a substantially centered position within the first layer width W_D1and the first layer width W_D1overlaps the entirety of the first width W_C1. In FIG. 8b, the first width W_C1has a position within the first layer width WD1 that is left-shifted by a distance equal to the first process alignment offset Δ₁; however, the first layer width W_D1overlaps the entirety of the first width W_C1. Similarly, in FIG. 8c, the first width W_C1has a position within the first layer width W_D1that is right-shifted by a distance equal to the first process alignment offset Δ₁; however, the first layer width W_D1overlaps the entirety of the first width W_C1. The first width W_C1can be left-shifted or right-shifted by a fraction or a percentage of the first process alignment offset Δ₁.

[0049] In another embodiment of the present invention, as illustrated in FIGS. 9athrough 9c, the second width W_C2of the second conductor 32 is preselected to be less than the second layer width W_D2of the data storage layer 20 in the second direction H by a second process alignment offset Δ₂. The second process alignment offset Δ₂can be a value determined by an alignment tolerance of a lithographic process used to fabricate an MRAM device incorporating the write conductor layout structure 10. For instance, if the alignment tolerance is 0.07 μm, then the second width W_C2can be less than the second layer width W_D2by Δ₂=0.07 μm or by some fraction or percentage of Δ₂. The second width W_C2can have a substantially centered position within the first layer width W_D2as illustrated in FIG. 9a. In FIG. 9a, opposed edges 35 of the second conductor 32 are positioned inward of the second layer width W_D2by a distance equal to the second process alignment offset Δ₂÷2 so that the second width W_C2has a substantially centered position within the second layer width W_D2and the second layer width W_D2overlaps the entirety of the second width W_C2. In FIG. 9b, the second width W_C2has a position within the second layer width W_D2that is left-shifted (herein shown as being up-shifted) by a distance equal to the second process alignment offset Δ₂; however, the second layer width W_D2overlaps the entirety of the second width W_C2. Similarly, in FIG. 9c, the second width W_C2has a position within the second layer width W_D2that is right-shifted (herein shown as being down-shifted) by a distance equal to the second process alignment offset Δ₂; however, the second layer width W_D2overlaps the entirety of the second width W_C2. The second width W_C2can be left-shifted or right-shifted by a fraction or a percentage of the second process alignment offset Δ₂.

[0050] In one embodiment of the present invention, the first process alignment offset Δ₁and the second process alignment offset Δ₂are in a range from about 0.01 μm to about 0.08 μm. In yet another embodiment of the present invention, the first process alignment offset Δ₁and the second process alignment offset Δ₂are equal to each other (Δ₁=Δ₂).

[0051] Alternatively, the first process alignment offset Δ₁and the second process alignment offset Δ₂need not be based on an alignment tolerance of a lithographic process. Instead, the first process alignment offset Δ₁and the second process alignment offset Δ₂can be a predetermined value based on a percentage of the first layer width W_D1in the first direction V and the second layer width W_D2in the second direction H respectively. In one embodiment of the present invention, as illustrated in FIG. 10a, the first conductor 30 is positioned above and the second conductor 32 is positioned below the data storage layer 20. The first direction V and the second direction H can be substantially orthogonal to each other so that the first conductor 30 and the second conductor 32 cross the data storage layer 20 in substantially orthogonal relation to each other. Additionally, as mentioned above, the first conductor 30 can have its first width W_C1centered C, left-shifted L, or right-shifted R within the first layer width W_D1, and the second conductor 32 can have its second width W_C2centered C, left-shifted U, or right-shifted D within the second layer width W_D2.

[0052] In another embodiment of the present invention, the first direction V or the second direction H is co-linear with an easy axis E (i.e. a long axis) of the data storage layer 20. In FIG. 10a, the second direction H is co-linear with the easy axis E of the data storage layer 20.

[0053] Although the first and second conductors (30, 32) are illustrated as being a discrete segment of a conductor, an MRAM array would include additional data storage layers 20 and the first and second conductors (30, 32) would extend in the first direction V and in the second direction H and would cross those additional data storage layers 20 as will be discussed below in reference to FIG. 11.

[0054] FIG. 10bis a cross-sectional view in the first direction V of the write conductor layout structure 10 of FIG. 10aand illustrates the first width W_C1positioned within and overlapped in its entirety by the first layer width W_D1of the data storage layer 20. FIG. 10cis a cross-sectional view in the second direction H of the write conductor layout structure 10 of FIG. 10aand illustrates the second width W_C2positioned within and overlapped in its entirety by the second layer width W_D2of the data storage layer 20.

[0055] For purposes of clarity, FIGS. 10band 10calso illustrate what is meant by the data storage layer 20 having a first layer width W_D1in the first direction V and a second layer width W_D2in the second direction H. In FIG. 10b, the first direction V is denoted by a + (a cross). The + represents a direction for the first direction V that is into the page. Accordingly, the first layer width W_D1is measured in the first direction V and is perpendicular to the first direction V (see FIG. 10a) as illustrated in the cross-sectional view of FIG. 13b. Furthermore, the first width W_C1of the first conductor 30 is overlapped in its entirety by the first layer width W_D1and the first conductor 30 crosses the data storage layer 20 in the first direction V (see FIG. 10a).

[0056] Similarly, in FIG. 10c, the second direction H is denoted by a ● (a dot). The ● represents a direction for the second direction H that is out of the page. Accordingly, the second layer width W_D2is measured in the second direction H and is perpendicular to the second direction H (see FIG. 10a) as illustrated in the cross-sectional view of FIG. 13c. Moreover, the second width W_C2of the second conductor 32 is overlapped in its entirety by the second layer width W_D2and the second conductor 32 crosses the data storage layer 20 in the second direction H (as noted in FIG. 10a).

[0057] In one embodiment of the present invention, also illustrated in FIGS. 8athrough 8c, the write conductor layout structure 10 includes the first conductor 30 having a first width W_C1and the second conductor 32 (not shown) having the second width W_C2that is substantially equal to the second layer width W_D2(W_C2=W_D2). The first and second conductors (30, 32) cross the data storage layer 20 in substantially the first and second directions (V, H) respectively and the data storage layer 20 is operatively positioned between the first and second conductors (30, 32). The first width W_C1of the first conductor 30 is preselected to be less than the first layer width W_D1of the data storage layer 20 and the first width W_C1is positioned relative to the first layer width W_D1so that the first layer width W_D1overlaps the entirety of the first width W_C1.

[0058] As mentioned previously, the first width W_C1of the first conductor 30 can be preselected to be less than the first layer width W_D1of the data storage layer 20 in the first direction V by a first process alignment offset Δ₁. The first process alignment offset Δ₁can be in a range from about 0.01 μm to about 0.08 μm. The first width W_C1can have a position within the first layer width W_D1that is a substantially centered position, a left-shifted position, and a right-shifted position (see FIGS. 8a, 8b, and 8c).

[0059] In another embodiment of the present invention, the first conductor 30 can be a current carrying bit line or a current carrying word line of a magnetic memory cell. If the first conductor 30 is the bit line, then the second conductor 32 can be the word line or vice versa. Although FIGS. 8athrough 8cillustrate the first conductor 30 having a vertical orientation in the first direction V and the second conductor 32 (not shown) having a horizontal orientation in the second direction H, the first conductor 30 can have a horizontal orientation and the second conductor 32 having a vertical orientation.

[0060] The data storage layer 20 is adapted to store a bit of data as an orientation of magnetization. The logic value of the bit (i.e. logic “0” or logic “1”) is written by rotating the orientation of magnetization from one stable state to another stable state. The orientation of magnetization rotates in response to a write magnetic field generated by currents applied to the first and second conductors (30, 32) crossing the data storage layer 20. The first conductor 30 generates a first portion of the write magnetic field in response to a current applied to the first conductor 30. Similarly, the second conductor 32 generates a second portion of the write magnetic field in response to a current applied to the second conductor 32. The first and second portions of the write magnetic field operate in combination to rotate the orientation of magnetization.

[0061] In FIG. 11, a plurality of data storage layers 20 are crossed by a plurality of the first and second conductors (30, 32) to form a MRAM array 50. In particular, a data storage layer 20_shas been selected for a write operation wherein its orientation of magnetization will be rotated by a first portion of a write magnetic field H_xand a second portion of the write magnetic field H_y. The first portion of the write magnetic field H_xis generated by a current I_yapplied to the first conduct 30 crossing the data storage layer 20_sand the second portion of the write magnetic field H_yis generated by a current I_xapplied to the second conductor 32 crossing the data storage layer 20_s. The first and second portions of the write magnetic field (H_x, H_y) have vectors determined by the right-hand rule. The currents I_yand I_xcan be applied by electronic circuits external to the array 50 and in electrical communication with the first and second conductors (30, 32). Although the first and second portions of the write magnetic field (H_x, H_y) are generated along the entire length of the first and second conductors (30, 32), it is the combined effect of the first and second portions of the write magnetic field (H_x, H_y) at the intersection of the first and second conductors (30, 32) with the data storage layer 20_sthat is operative to rotate the orientation of magnetization of the data storage layer 20_s.

[0062] In one embodiment of the present invention, only the first width W_C1of the first conductor 30 is preselected to be less than the first layer width W_D1of the data storage layer 20_sin the first direction V and the second width W_C2of the second conductor 32 is at least as wide as the second layer width W_D2in the second direction H. As mentioned previously, the first width W_C1is positioned so that it is within the first layer width W_D1and so that the first layer width W_D1overlaps the entirety of the first width W_C1. The position of the first width W_C1operatively couples the first portion of the write magnetic field H_xwith the data storage layer 20_s. A magnitude of the current I_yapplied to the first conductor 30 can be less than when the first width W_C1is at least equal to the first layer width W_D1(W_C1=W_D1). In essence, narrowing the first width W_C1results in a magnitude of the first portion of the write magnetic field H_xbeing greater for the same applied current I_yand the magnitude of H_xexceeds the minimum magnetic field strength necessary to rotate the orientation of orientation. Consequently, I_ycan be reduced and the magnitude of H_xwill be sufficient to rotate the orientation of magnetization. Because I_yis reduced, the power consumed by a write operation to the data storage layer 20_sis also reduced. The reduction in power consumption also applies to the other data storage layers 20 in the array 50 that are selected for a write operation. As was stated above, reduced power consumption is desirable in portable applications to conserve battery power and in applications in which it is desirable to reduce waste heat.

[0063] In another embodiment of the present invention, a further reduction in power consumption can be realized when the second width W_C2of the second conductor 32 is preselected to be less than the second layer width W_D2of the data storage layer 20_sin the second direction H (i.e. both the first and second conductors 30, 32 are narrowed). The second width W_C2is positioned so that it is within the second layer width W_D2and so that the second layer width W_D2overlaps the entirety of the second width W_C2. The position of the second width W_C2operatively couples the second portion of the write magnetic field H_ywith the data storage layer 20_s. For the same reasons given above for the first conductor 30, a magnitude of the current I_xapplied to the second conductor 32 can be less than when the second width W_C2is at least equal to the second layer width W_D2(W_C2=W_D2). The further reduction in power consumption also applies to the other data storage layers 20 in the array 50 that are selected for a write operation.

[0064] FIG.12 is a plot of a current switching curve SC₁for a prior art magnetic memory cell layout, as described above in reference to FIGS. 4band 5b, in which the width of a word line W_cand the width of a bit line W_bare equal (W_c=W_b). The word line W_cand the bit line W_bcross the magnetic memory cell. Moreover, the word line W_cis offset from the magnetic memory cell by 0.05 μm to simulate the effects of conductor misalignment on the current switching characteristics of the memory cell. That offset is shown as δ in FIGS. 4band 5b. The switching curve SC₁represents values for a magnitude of a bit line current I_xon the y-axis of the plot and a magnitude of a word line current I_yon the x-axis of the plot that are sufficient to rotate the orientation of magnetization M₁in order to write a bit during a write operation to the memory cell. The bit line current I_xgenerates the magnetic field H_yand the word line current I_ygenerates the magnetic field H_x. For a point 1 on the switching curve SC₁, a bit line current I_xof about 1.75 mA and a word line I_ycurrent of about 3.60 mA are required to rotate the orientation of magnetization.

[0065] FIG. 12 also illustrates a plot of a current switching curve SC₂for the magnetic memory cell layout 10 of the present invention. For the switching curve SC₂, the width of the bit line is the same as the width of the data storage layer (not shown) in the direction that the bit line crosses the data storage layer. However, the word line has a width that is 0.05 μm less than the width of the data storage layer in the direction that the word line crosses the data storage layer. Moreover, the word line is centrally positioned within the width of the data storage layer and the data storage layer overlaps the entirety of the width of the word line (see FIG. 9a). Accordingly, for a point 2 on the switching curve SC₂, a bit line current I_xof about 1.75 mA and a word line current I_yof about 3.00 mA are required to rotate the orientation of magnetization. Therefore, for the same bit line current I_x=1.75 mA, the magnetic memory cell layout 10 of the present invention requires about 20% less word line currently than the prior art magnetic memory cell layout (i.e. 3.00 mA vs. 3.60 mA). Resulting is a reduction in power consumption for the magnetic memory cell layout 10 of the present invention. Furthermore, the improvement seen by narrowing the word line can also be duplicated for the bit line, resulting in an even greater reduction in power consumption.

[0066] In one embodiment of the present invention, only the first width W_C1of the first conductor 30 is preselected to be less than the first layer width W_D1of the data storage layer 20 in the first direction V. The second width W_C2of the second conductor 32 is at least as wide as the second layer width W_D2in the second direction H. The first width W_C1is positioned so that it is within the first layer width W_D1and so that the first layer width W_D1overlaps the entirety of the first width W_C1. The position of the first width W_C1operatively couples the first portion of the write magnetic field H_xwith the data storage layer 20. The current I_yapplied to the first conductor 30 results in a magnitude of the first portion of the write magnetic field H_xbeing greater than when the first width W_C1is at least equal to the first layer width W_D1(W_D1=W_D1). In essence, narrowing the first width W_C1results in a magnitude of the first portion of the write magnetic field H_xbeing greater for the same applied current I_y. Consequently, a magnitude of the write magnetic field necessary to rotate the orientation of magnetization of the data storage layer is increased by the contribution from the first portion of the write magnetic field H_x.

[0067] In another embodiment of the present invention, the magnitude of the write magnetic field is further increased when the second width W_C2of the second conductor 32 is preselected to be less than the second layer width W_D2of the data storage layer 20 in the second direction H. The second width W_C2is positioned so that it is within the second layer width W_D2and so that the second layer width W_D2overlaps the entirety of the second width W_C2. The position of the second width W_C2operatively couples the second portion of the write magnetic field H_ywith the data storage layer 20. For the same reasons given above for the first conductor 30, the current I_xapplied to the second conductor 32 results in a magnitude of the second portion of the write magnetic field H_ybeing greater than when the second width W_C2is at least equal to the second layer width W_D2(W_C2=W_D2).

[0068] In the above mentioned embodiments, the first width W_C1of the first conductor 30 can be preselected to be less than the first layer width W_D1of the data storage layer 20 in the first direction V by a first process alignment offset Δ₁. Furthermore, the second width W_C2of the second conductor 32 can be preselected to be less than the second layer width W_D2of the data storage layer 20 in the second direction H by a second process alignment offset Δ₂. The first and second process alignment offsets Δ₁and Δ₂can be in a range from about 0.01 μm to about 0.08 μm.

[0069] For the embodiments described herein, the structure and materials for the data storage layer 20 are well understood by those skilled in the art to which the present invention pertains. However, suitable materials for the active layer (free to rotate its orientation of magnetization) and the reference layer (orientation of magnetization is pinned and is not free to rotate) of the data storage layer 20 include nickel-iron (NiFe), cobalt (Co), Fe₃O₄, CrO₂, alloys or layers including combinations of those materials, ferromagnetic materials, and ferrimagnetic materials. The active layer and the reference layer can be separated by an one or more layers of dielectric material including aluminum-oxide (Al₂O₃), aluminum nitride (AIN), silicon-dioxide (SiO₂), and silicon-nitride (Si₃N₄). The first and second conductors (30, 32) can be made from an electrically conductive material such as copper or aluminum, for example.

[0070] The write conductor layout structure 10 of the present invention has been discussed in relation to its use with a magnetic memory cell; however, the principles of the present invention are not limited to MRAM. The write conductor layout structure 10 also applies to a current carrying conductor that operatively generates a localized magnetic field to switch an orientation of magnetization in a magnetic material.

[0071] Although several embodiments of the present invention have been disclosed and illustrated, the invention is not limited to the specific forms or arrangements of parts so described and illustrated. The invention is only limited by the claims.