Surface Emission Type Semiconductor Laser

1. Field of the Invention

The present invention relates to a surface emission type semiconductor laser adapted to emit a laser beam in a direction perpendicular to a substrate.

2. Description of the Related Art

A surface emission type laser including a resonator disposed in a direction perpendicular to the substrate thereof is disclosed in Lectures of the 50-th Meeting of Applied Physics in Japan (Sep. 27, 1989), Vol. 3, pp. 909, 29a-ZG-7. In accordance with the prior art, as shown in FIG. 12, there is first provided an n-type GaAs substrate 602 on which an n-type AlGaAs/AlAs multi-layer film 603, an n-type AlGaAs cladding layer 604, a p-type GaAs active layer 605 and a p-type AlGaAs cladding layer 606 are sequentially grown and formed. The multi-layered structure is then etched while leaving a column-like part at the top thereof. The remaining column-like part is enclosed by a buried layer which is formed by sequentially growing a p-type layer 607, n-type layer 608, p-type layer 609 and p-type layer 610 all of which are of AlGaAs in liquid phase epitaxy method. Thereafter, a multi-layer dielectric film 611 is deposited on the cap layer of p-type AlGaAs 610 at the top thereof. Finally, p- and n-type ohmic electrodes 612 and 601 are formed respectively on the top and bottom end faces of the structure thus formed. In such a manner, a surface emission type semiconductor laser will be completed.

The buried layer (607-608) formed in the above manner defines a p-n junction which is used as means for preventing current from leaking to layer sections other than the active layer section.

However, by using such a p-n junction, it is difficult to provide a sufficient current restriction; and it cannot suppress any reactive current perfectly. Due to generation of heat in the component, therefore, the surface emission type semiconductor laser constructed in accordance with the prior art is impractical in that it is difficult to perform a continuous generating drive in room temperature. It is thus important to restrict the reactive current in the surface emission type semiconductor laser.

Where the buried layer is of a multi-layered structure to form a p-n junction as in the prior art, the p-n interface in the buried layer should be positioned in consideration of a position of the interface between each of the adjacent column-like grown layers. It is difficult to control the thickness of each layer in the multi-layered structure. It is therefore very difficult to consistently produce surface emission type semiconductor lasers.

If a buried layer is formed around the column by the liquid phase epitaxy method as in the prior art, there is a high risk of breaking-off of the column-like part, leading to a reduced yield. The prior art was thus subject to a structural limitation in improving its characteristics.

The prior art raises further problems even when it is applied to various other devices such as laser printers and the like.

For example, laser printers can have an increased freedom of design as in simplifying the optical system or in decreasing the optical path, since the source of light (semiconductor laser and so on) has a relatively large size of light spot equal to several tens .mu.m and if a light emitting element having an increased intensity of light emission is used in the laser printers.

With the surface emission type semiconductor laser constructed according to the prior art, the optical resonator is entirely buried in a material having a refractive index higher than that of the resonator. Light rays are mainly guided in the vertical direction. As a result, a spot of light emission in the basic generation mode will have a diameter equal to about 2 .mu.m even if the shape of the resonator is modified in the horizontal direction.

It has been proposed that the light spots be located close to each other up to about 2 .mu.m and that a plurality of light sources be used to increase the size of a spot. From the standpoint of reproductiveness and yield, however, it is very difficult with the prior art to bury a plurality of resonators spaced away from one another by several microns to using the LPE method. Even if such a burying can be successfully carried out, the spots cannot be united into a single spot since the transverse leakage of light is little.

It is also necessary that a plurality of light spots are formed into a single beam of light and that the laser beams each consisted of plural spots are in phase to increase the intensity of light emission. However, the prior art could not produce a surface emission type semiconductor laser which emits a plurality of laser beams close to one another up to a distance by which one of the laser beams are influenced by the other, in order to synchronize the laser beams in phase.

In such a type of surface emission type semiconductor lasers, it is very important to set a plane of polarization in the laser beam in a particular direction. The plane of polarization is one in which the laser beam oscillates. The laser beam has a property that it proceeds while the plane of polarization is being maintained in one direction.

It is known in the art that when a laser beam is reflected by a mirror, its reflectivity depends on an angle included between the plane of polarization and the mirror. Since the laser beam has such a property, the direction of polarization plane in the laser beam becomes very important in designing an instrument utilizing the laser beam, such as laser printer. For example, when a laser beam is to be reflected by a mirror to provide a desired level of light intensity in the reflected laser beam, it is required to adjust the position of an element so that the direction of polarization plane can be set. If a plurality of elements have different directions of polarization plane in laser beams, it is extremely troublesome to adjust the position of each clement. In addition, when one element includes a plurality of semiconductor lasers and if the directions of polarization plane in the laser beams are different from one another, the reflectivity in the mirror varies from one laser beam to another to provide the resultant intensities in the reflected beams which are different from one another. In the other fields in which a laser beam is caused to pass through a polarizing filter or the like, such as optical communication, it is required that only a laser beam having a particular direction of polarization plane is caused to pass through the polarizing filter. It is very important herein that the direction of polarization plane is set in a particular direction.

However, the actual measurements of surface emission type semiconductor lasers relating to the direction of polarization plane in the laser beam showed that the direction of polarization plane was different from one element to another and that when a plurality of lasers are arranged within a single element, there was a variability on the directions of polarization plane even in the laser beams which were emitted from the one and same element.

From our study, it has been found that the direction of polarization plane depends on the cross-sectional configuration of a resonator parallel to a semiconductor substrate. In the plane of polarization of the prior art, a buried layer was formed to surround a resonator by the use of LPE (Liquid Phase Epitaxy) process after the resonator had been formed into a column-like configuration, as described. In the LPE process, it cannot be avoided to create an undesirable phenomenon which is called "melt-back". The "melt-back" phenomenon causes the resonator to deform since the sides of the column-like resonator are fused by contact with the high-temperature molten material. The fusion of resonator sides due to-the "melt-back" is very unstable, depending on the surface state, crystal orientation and other factors. Therefore, even if a resonator having its desirable cross-sectional configuration was formed by an etching technique, the cross-sectional configuration thereof would be deformed by the "melt-back" when it was subjected to the LPE process. Consequently, the direction of polarization plane in the laser beam emitted from such a resonator could not be also set in a desired direction.

It is therefore an object of the present invention to provide a high-efficiency surface emission type semiconductor laser which is of a complete current restrictable structure provided by improving the material from which the buried layer is made and which can set the plane of polarization in the laser beam in a particular desired direction.

Another object of the present invention is to provide a surface emission type semiconductor laser which can independently set the direction of polarization plane in the laser beam from each of a plurality of optical resonators or which can cause the plane of polarization in each laser beam to align with one direction.

To this end, a surface emission type semiconductor laser for emitting a beam in a direction perpendicular to a semiconductor substrate in which said laser is formed comprising: an optical resonator including a pair of reflecting mirrors having different reflectivities and a plurality of semiconductor layers between said reflecting mirrors, the semiconductor layers including at least a cladding layer in said semiconductor layers being formed into at least one column-like portion; and a buried layer surrounding said at least one column-like portion; and a light emission side electrode being in contact with the surface of said at least one column-like portion and having a light emitting port formed therein at an area opposite to said at least one column-like portion, one of said pairs of reflecting mirrors on the light emitting side being formed at least in said light emitting port, said at least one column-like portion being of rectangular cross-section in a plane parallel to said semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam being parallel to the direction of said shorter sides.

According to the present invention, the column-like portions formed in the optical resonator are of rectangular cross-section parallel to the semiconductor substrate and have longer and shorter sides. Such a cross-sectional configuration will not be greatly changed since the longer and shorter sides thereof remain as it is even if there is somewhat deformation.

In order to reduce the deformation of the rectangular cross-sectional optical resonator means, the buried layer may be formed through a vapor growth at a relatively low temperature. Unlike the liquid phase growth, thus, the melt-back phenomenon leading to the deformation of the cross-sectional configuration in the resonator means will not be produced. For such a purpose, in addition to the buried layer formed of the II-VI group compound semiconductor epitaxial layer capable of being formed through the low-temperature vapor growth, the buried layer of an insulation silicon compound is also preferable. Further, the buried layer of a double-layer structure comprising an insulation silicon compound film and a flattening insulation layer is also preferable. The insulation silicon compound (e.g., silicon oxide) may be formed through the normal pressure/thermal CVD or the like at a relatively low temperature. In addition, when the insulation silicon compound is formed into a thin film, time for which the optical resonator means is exposed to heat can be reduced with less damage of the crystal due to heart. The flattening insulating layer may be of any one selected from a group consisting of easily flattenable SOG film, heat-resistant resins such as polyimide, polycrystalline II-VI group compound semiconductor film (e.g., ZnSe or the like) and another insulation silicon compound film formed through a process of lower temperature than said insulation silicon compound film (e.g., SiOx formed through the electron beam deposition) as far as they are of insulation property.

Experiments showed that the direction of polarization plane in the laser beam is aligned with a direction parallel to the direction of shorter sides in the rectangular cross-section of the column-like portions :formed in the resonator. When a single resonator is formed in a single element or when a plurality of resonators are formed in a single element, the direction of polarization plane in the laser beam emitted from each resonator can be aligned with the direction of shorter sides in the column-like portions of rectangular cross-section.

When the length of the longer sides in the column-like portion of rectangular cross-section is A while the length of the shorter sides thereof is B, a relationship represented by B<A <2B is preferred. If the length A is equal to or larger than 2B, the light emitting port is also of rectangular configuration rather than circle or regular polygon. Thus, a plurality of light emitting spots will be formed for one light emitting port. Furthermore, the resonator will be increased in volume to increase the threshold current in laser oscillation.

It is also preferred that the respective sides of the rectangular cross-section in the resonator are set to fulfill the relationship, 1.1.times.B.ltoreq.A.ltoreq.1.5.times.B. If the length of the longer sides is less than 1.1.times.B , the plane of polarization cannot be well controlled since the cross-sectional configuration of the resonator varies due to variations in the formation of the buried layer, particularly when the buried layer is formed by the use of the LPE process. Considering the threshold current in laser oscillation, the setting is preferably in the range of A.ltoreq.1.5.times.B.

If the diagonal length of the rectangular cross-section of the column-like portion parallel to the semiconductor substrate is equal to or less than 10 .mu.m, NFP (Near Field Pattern) mode be comes 0-order basic mode.

If the optical resonator has a single column-like portion, the reflecting mirror on the exit side thereof may be formed at a position opposite to the end face of the column within the range of said end face. In this case, the refractive index waveguide structure may be either of rib waveguide type or buried type.

In this surface emission type semiconductor laser, the optical resonator may include a separation groove or grooves for separating one of the column-like portions from another adjacent one. The buried layer is located in the separation groove and a light emitting portion is formed on each of the rectangular column-like portions. The separation groove should not reach the active layer in the semiconductor layers defining the optical resonator. In such a manner, the respective light emitting portions are influenced by each other through the active layer, such that the lights from the light emitting portions will be in phase.

When it is desired to increase the light emission spot, a buried layer which is transparent for the wavelength of the exit laser beam may be buried in the separation groove. The exit side reflecting mirror is formed through a region opposite to the end face of each of the column-like layers and the buried layer located in the separation groove. Thus, a region sandwiched between each adjacent light emitting portions also serves as a vertical resonating structure. Light leaked into such a region effectively contributes to the laser generation to increase the light emission spot in size. Since the synchronized laser beams are superimposed one over another, the light output increases and the angle of radiation decreases. When the respective column-like portions are formed to be of rectangular cross-section having shorter sides which are parallel to one another, the semiconductor laser can emit a single laser beam which is aligned in phase and plane of polarization and which has a light emitting spot increased in size. If the separation groove is substantially perpendicular to the semiconductor substrate, light rays slantingly entering the separation groove can be totally reflected to increase the confinement of light, utilizing a differential refraction. If the cross-section of the separation groove parallel to the semiconductor substrate has a width ranging between 0.5 .mu.m and 10 .mu.m, the order of the transverse generation mode measured from NFP becomes 0-order basic mode.

The apparatus of the present invention may comprise a plurality of surface emission type lasers simultaneously formed in a single substrate, each of the surface emission type lasers including an oscillator which can be freely arranged in the two-dimensional plane.

If a light emitting port formed in a light emission side electrode is of a rectangular opening configuration, the direction of polarization plane can be set in the direction of shorter sides in such a rectangular opening configuration without formation of the column-like portions of the optical resonator into rectangular cross-section. This is effective when the column-like portion cannot be formed into rectangular cross-section from a limitation on the two-dimensional arrangement. When the length of the longer sides in the light emitting port is a while the length of the shorter sides therein is b, the relationship therebetween is preferably b<a<2b and more preferably 1.1.times.b.ltoreq.a.ltoreq.1.5.times.b. If a ratio of b/a is increased, the ratio of B/A in the column-Dike portion of the optical resonator will be correspondingly increased. This means that such a relationship becomes out of the preferred range relating to the longer and shorter sides. Alternatively, both the cross-section of the column-like portion and the opening configuration of the light emitting port may be rectangular. In this case, the respective shorter sides in the column-like portion and light emitting port may be parallel to one another .

FIG. 1a is a perspective view, partially in section, of a light emitting portion of the first embodiment of a semiconductor laser constructed in accordance with the present invention.

FIG. 1b is a plan view of the semiconductor laser shown in FIG. 1a.

FIGS. 2a-2f are cross-sectional views of the semiconductor laser shown in FIG. 1, illustrating the process of making it.

FIG. 3 is a graph illustrating the relationship between the drive current and the generated light output in the semiconductor laser shown in FIG. 1.

FIG. 4a is a perspective view, partially in section, of a light emitting portion of the second embodiment of a semiconductor laser constructed in accordance with the present invention.

FIG. 4b is a plan view of the semiconductor laser shown in FIG. 4a.

FIGS. 5a-5f are cross-sectional views of the semiconductor laser shown in FIG. 4, illustrating the process of making it.

FIG. 6a is a perspective view, partially in section, of a light emitting portion of a surface emission type semiconductor laser constructed in accordance with the third embodiment of the present invention, the semiconductor laser adapted to generate laser beams synchronized in phase.

FIG. 6b is a plan view of the semiconductor laser shown in FIG. 6a.

FIGS. 7a-7g are cross-sectional views of the semiconductor laser shown in FIG. 6, illustrating the process of making it.

FIGS. 8a-8d illustrate differences in shape and near field pattern between the surface emission type semiconductor laser constructed according to the prior art and the semiconductor laser of FIG. 6: FIG. 8a shows the shape of the surface emission type semiconductor laser of the prior art on the exit side thereof; FIG. 8b shows an intensity profile in the near field pattern of the semiconductor laser shown in FIG. 8a; FIG. 8c shows the shape of the semiconductor laser of the present embodiment at the exit side; and FIG. 8d shows an intensity profile of the near field pattern of the semiconductor laser shown in FIG. 8c.

FIGS. 9a-9d schematically illustrate various manners in which the shorter sides in column-like portions of rectangular cross-section are set in direction and in which a polarizing filter permits the passage of laser beams having their planes of polarization set in particular directions depending on the direction of the shorter sides.

FIGS. 10a-10c schematically illustrate various shapes of surface emission type semiconductor lasers constructed according to still further embodiments of the present invention at the exit sides thereof.

FIGS. 11a-11d schematically illustrate various shapes of surface emission type semiconductor lasers constructed according to the fourth embodiment of the present invention at the exit sides thereof.

FIG. 12 is a perspective view of a surface emission type semiconductor laser constructed according to the prior art, illustrating the light emitting portion thereof.

FIG. 13 is a perspective view, partially broken, of the light emitting portion of a semiconductor laser constructed according to the fifth embodiment of the present invention.

FIG. 14 is an enlarged cross-sectional view of the active layer of MQW structure in the semiconductor laser shown in FIG. 13.

FIG. 15 is a graph illustrating the relationship between the drive current and the emitted light output in the semiconductor laser shown in FIG. 13.

FIG. 16 is a perspective view, partially broken, of the light emitting portion of a surface emission type semiconductor laser constructed according to a further embodiment of the present invention.

FIG. 17 is a perspective view, partially broken, of the light emitting portion of a phase-locked surface emission type semiconductor laser constructed according to the sixth embodiment of the present invention.

FIGS. 18a-18d schematically illustrate the different shapes of opening in the electrode of a semiconductor laser constructed according to the seventh embodiment of the present invention at the light exit side thereof.

FIGS. 19a-19d schematically illustrate the different shapes of opening in the light exit side electrode of a semiconductor laser constructed according to the eighth embodiment of the present invention.

FIG. 20 is a schematic view of an apparatus for producing the II-VI group compound semiconductor layers in the semiconductor lasers constructed according to the respective embodiments of the present invention.

FIG. 21 is a schematic and perspective view showing the cross-section of the ninth embodiment of a semiconductor laser constructed in accordance with the present invention.

FIG. 1a is a perspective view, partially broken, of a semiconductor laser 100 constructed according to the first embodiment of the present invention while FIG. 2a-2f illustrate various steps in producing the semiconductor laser of the first embodiment.

The semiconductor laser 100 shown in FIG. 1a may be produced according to the following process:

A buffer layer of n-type GaAs 103 is first formed on a substrate of n-type GaAs 102. Over the buffer layer 103, there are formed 30 pairs of distribution reflection type multi-layer film mirror 104 which include an n-type Al.sub.0.7 Ga.sub.0.3 As layer and an n-type Al.sub.0.1 Ga.sub.0.9 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 870 nm. On the multi-layer film mirror 104, there are sequentially formed a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 105, an active layer of p-type GaAs 106, another cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 107 and a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 108, utilizing the epitaxial growth in the MOCVD process (see FIG. 2a). At this time, for example, the formation of these layers was carried out under such a condition that the temperature on growth is 700.degree. C. and the pressure on growth is 150 Torr., and used organic metals such as TMGa (trimethyl gallium) and TMAl(trimethyl aluminum) as III-group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After growth, an SiO.sub.2 layer 112 is formed on the top of the multi-layered structure by the thermal CVD process. By the use of the reactive ion beam etching process (RIBE process), the multi-layered structure is etched up to the middle cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 107, leaving a column-like light emitting portion covered with a hard baked resist layer 113 (FIG. 2b). By performing this etching process, the column-like portion of the resonator has the same cross-section as the profile of the hard baked resist layer 113 which has been formed over the resonator. In the present embodiment, the cross-section parallel to the semiconductor substrate 102 is of a rectangular configuration having longer and shorter sides A, B, as shown in FIG. 1b. The etching gas is a mixture of chlorine with argon under a pressure of 1.times.10.sup.-3 Torr.. The leading voltage used therein is equal to 400 V. The purpose of the etching of the cladding layer 107 up to the middle thereof is to provide a rib waveguide type refraction waveguide structure which can confine injected carriers and light rays in the active layer.

Subsequently, a buried layer is formed on the cladding Al.sub.0.4 Ga.sub.0.6 As layer 107. After the resist 113 has been removed, a layer of ZnS.sub.0.06 Se.sub.0.94 109 is then buried and formed using the MOCVD process. In the growth, the temperature is 275.degree. C., the pressure is 70 Torr., and the adduct consisting of II group organometal compound and VI group organometal compound is DMZn-DMSe (dimethyl zinc and dimethyl selenium). This becomes II group material. The VI group hydride is H.sub.2 Se (hydrogen selenide) and H.sub.2 S (hydrogen sulfide). This becomes VI group material. In this process, a monocrystal layer of ZnS.sub.0.06 Se.sub.0.94 109 grows on the etched top portion of the cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 107 while a polycrystal layer of ZnS.sub.0.06 Se.sub.0.94 114 grows on the top portion of the layer of SiO.sub.2 112 (FIG. 2c).

In the growth of the buried layer 109 under this MOCVD process, any "melt-back" phenomenon as in the conventional LPE process will not be created since the temperature in growth is relatively low (e.g. 275.degree. C.) and the process used is a vapor growth process. Thus, the rectangular cross-section of the column-like portion will not be greatly changed.

Subsequently, a resist layer 115 having an increased thickness is applied over the entire surface of the multi-layered structure, with the surface of the resist layer being then flattened (FIG. 2d). By the use of RIBE process, this assembly is etched until the SiO.sub.2 layer 112 is exposed. At this time, the etching rate of the resist 115 is equal to that of the polycrystal ZnS.sub.0.06 Se.sub.0.94 layer. Since the SiO.sub.2 layer 112 serves as an etching stop layer, the etched surface can be flattened.

After the SiO.sub.2 layer 112 has been removed by the conventional wet-etching, four pairs of multi-layered dielectric films of SiO.sub.2 /a-Si 111 are then formed on the surface by the use of electron beam deposition. Reactive ion etching(RIE) is then used to remove the material, leaving a region slightly smaller than the diameter of the light emitting portion (FIG. 2e). The reflectivity of the multi-layered dielectric film mirror 111 is 94% for wavelength of 870 nm.

Thereafter, a p-type ohmic electrode 110 is deposited on all the top face except the multi-layered dielectric film 111. An n-type ohmic electrode 101 is further deposited over the semiconductor substrate. In an atmosphere of N.sub.2, the entire structure is alloyed at 420.degree. C. to provide a surface emission type semiconductor laser 100 (FIG. 2f).

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried ZnS.sub.0.06 Se.sub.0.94 layer 109 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer. Since it is not required that the buried layer is any multi-layered structure, it can be more easily grown with an increased reproductiveness, from one batch to another. The utilization of the rib waveguide structure using the ZnS.sub.0.06 Se.sub.0.94 layer which has its refractive index sufficiently smaller than that of GaAs can realize a more effective light confinement.

Further, the plane of polarization in the laser beam emitted from this surface emission type semiconductor laser is aligned with the direction of shorter sides in the column-like portion of rectangular cross-section. Therefore, each of the surface emission type semiconductor laser elements can cause the plane of polarization in the laser beam therefrom to align with a particular direction. If such elements are to be incorporated into any laser instrument, any fine adjustment relating to the position of each element is not necessarily required. As a result, the direction of polarization plane in the laser beam can easily be set in a particular desired direction, according to the present invention.

In order to prevent the tendency of transition and defect produced at the interface of the buried layer (ZnS.sub.0.06 Se.sub.0.94 layer), it is desirable that the growth temperature is equal to or lower than 500! n. Since the growth temperature is very low (275.degree. C.) in this embodiment, the interface of the ZnS.sub.0.06 Se.sub.0.94 layer can be stably re-grown with reduced transition or defect.

FIG. 3 shows the relationship between the drive current and the generated light output in the surface emission type semiconductor laser constructed according to this embodiment. It will be apparent from this graph that the continuous generation can be accomplished at room temperature and the threshold is very low or equal to one mA. Furthermore, the external differential quantum efficiency is increased and the characteristics of the laser is improved by restricting the reactive current.

Although the surface emission type semiconductor laser constructed according to the present embodiment has been described as to the rectangular cross-section of the column-like portion in the optical resonator, the configuration of the emitted laser beam mainly depends on that of the light emitting port which is formed in the electrode 110. Thus, if this light emitting port has previously been formed into circular or regular polygonal configuration, the configuration of the emitted laser beam can be a circular spot beam.

Table 1 shows the relationship of near field pattern relative to the diagonal length in the rectangular cross-section of the column-like portion in the surface emission type semiconductor laser according to this embodiment of the present invention. It will be apparent therefrom that if the diagonal length is equal less than 10 .mu.m, the generation is carried out in the basic mode.

It is preferred that the contact layer in the surface emission type semiconductor laser according to this embodiment of the present invention is of a thickness equal to or less than 3.0 .mu.m. This is because of reduction of the light absorption in the contact layer. Such a thickness is more preferably less than 0.3 .mu.m because the element resistance is reduced and the external differential quantum efficiency is increased.

FIG. 4a is a perspective view, partially broken, of the light emitting portion of a semiconductor laser 200 constructed according to the second embodiment of the present invention while FIGS. 5a-5f illustrate various steps for producing the semiconductor laser 200.

The semiconductor laser 200 of the second embodiment is different from that of the first embodiment in that the semiconductor laser 200 comprises a column-like portion defined by a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 203 through part of a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 205.

The semiconductor laser 200 comprises a substrate of n-type GaAs 202 over which a buffer layer of n-type GaAs 203 is formed. Over the buffer layer 203, there are formed 30 pairs of distribution reflection type multi-layer film mirror 204 which consists of an n-type AlAs layer and an n-type Al.sub.0.1 Ga.sub.0.9 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 870 nm. On the multi-layer film mirror 204, there are sequentially formed a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 205, an active layer of p-type GaAs 206, another cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 207 and a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 208, utilizing the epitaxial growth in the MOCVD process (FIG. 5a). At this time, for example, the formation of these layers was carried out under such a condition that the temperature on growth is 700.degree. C. and the pressure on growth is 150 Torr. and used organometallic compound such as TMGa (trimethyl gallium) and TMAl(trimethyl aluminum) as III-group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After growth, an SiO.sub.2 layer 212 is formed on the top of the multi-layered structure by the thermal CVD process. By the use of the reactive ion beam etching process (RIBE process), the multi-layered structure is etched up to the middle of the cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 205, leaving a column-like light emitting portion covered with a hard baked resist layer 213 (FIG. 5b). In this etching process, the column-like portion of the optical resonator will have a cross-section corresponding to the profile of the hard baked resist layer 213 which has been formed thereover. In the present embodiment, the cross-section of the column-like portion parallel to the semiconductor substrate 202 is of a rectangular configuration having longer and shorter sides A, B. The etching gas is a mixture of chlorine with argon under a pressure of 1.times.10.sup.-3 Torr.. The leading voltage used therein is equal to 400 V.

In order to form a buried layer, the resist layer 213 is removed. After the resist 213 has been removed, a layer of ZnS.sub.0.06 Se.sub.0.94 209 is then buried and formed using the MOCVD process. In the growth, the temperature is 275.degree. C., the pressure is 70 Torr., and the adduct consisting of II group organometallic compound and VI group organometallic compound is DMZn-DMSe (dimethyl zinc and dimethyl selenium). This becomes II group material. The VI group hydride is H.sub.2 Se (hydrogen selenide) and H.sub.2 S (hydrogen sulfide). This becomes VI group material. In this process, a monocrystal layer of ZnS.sub.0.06 Se.sub.0.94 209 grows on the etched top portion while a polycrystal layer of ZnS.sub.0.06 Se.sub.0.94 214 grows on the top portion of the layer of SiO.sub.2 212 (FIG. 5c).

In the growth of the buried layer 209 under this MOCVD process, any "melt-back" phenomenon as in the conventional LPE process will not be created since the temperature in growth is relatively low (e.g. 275.degree. C.) and the process used is a vapor growth process. Thus, the rectangular cross-section of the column-like portion will not be greatly changed.

Subsequently, a resist layer 215 having an increased thickness is applied over the entire surface of the multi-layered structure, with the surface of the resist layer being then flattened (FIG. 5d). By the use of RIBE process, this assembly is etched until the SiO.sub.2 layer 212 is exposed. At this time, the etching rate of the resist 215 is equal to that of the polycrystal ZnS.sub.0.06 Se.sub.0.94 layer. Since the SiO.sub.2 layer 212 serves as an etching stop layer, the etched surface can be flattened.

After the SiO.sub.2 layer has been removed by using the conventional wet-etching process, four pairs of multi-layered dielectric films of SiO.sub.2 /a-Si 211 are then formed on the surface of the multi-layered structure by the use of electron beam deposition. RIE dry-etching is then used to remove the dielectric films, leaving a region slightly smaller than the diameter of the light emitting portion (FIG. 5e). The reflectivity of the multi-layered dielectric films is 94% for wavelength of 870 nm.

Thereafter, a p-type ohmic electrode 210 is deposited on all the top face except the multi-layered dielectric films 211. An n-type ohmic electrode 201 is further deposited over the semiconductor substrate. In an atmosphere of N.sub.2, the entire structure is alloyed at 420.degree. C. to provide a surface emission type semiconductor laser (FIG. 5f).

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried layer of ZnS.sub.0.06 Se.sub.0.94 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer. Since it is not required that the buried layer is any multi-layered structure, it can be more easily grown with an increased reproductiveness from one batch to another. The utilization of the rib waveguide structure using the ZnS.sub.0.06 Se.sub.0.94 layer having its refractive index sufficiently smaller than that of GaAs can realize a more effective light confinement with the covering type refraction waveguide structure in which the active layer is buried.

Further, the plane of polarization in the laser beam emitted from this surface emission type semiconductor laser is aligned with the direction of shorter sides in the column-like portion of rectangular cross-section. Therefore, if such surface emission type semiconductor laser elements are to be incorporated :into any laser instrument, any fine adjustment relating to the position of each element is not necessarily required. As a result, the direction of polarization plane in the laser beam can easily be set in a particular desired direction, according to the present invention.

Since the growth temperature of the buried layer (ZnS.sub.0.06 Se.sub.0.94 layer) is very low (275.degree. C. in this embodiment) as in the first embodiment, the re-grown interface of the ZnS.sub.0.06 Se.sub.0.94 layer can be stabilized with reduced transition or defect.

The active GaAs layer may be replaced by an active layer made of AlGaAs with the equivalent advantage. Even if the column-like portion is formed of any one of the other III-V group compound semiconductors, the equivalent advantage can be provided by selecting any suitable one of the II-VI group compound semiconductor to form the buried layer.

Referring next to FIG. 6a, there is shown the third embodiment of a phase-synchronization type semiconductor 300 constructed in accordance with the present invention, which can increase the dimension of the emission spot. FIGS. 7a-7g illustrate various steps for producing the semiconductor laser 300.

The semiconductor laser 300 is different from those of the first and second embodiments in that the semiconductor laser 300 includes a cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 307 formed into a plurality of column-like portions which are separated from each other by separation grooves.

The semiconductor laser 300 comprises a substrate of n-type GaAs 302 over which a buffer layer of n-type GaAs 303 is formed. Over the buffer layer 303, there are formed 25 pairs of distribution reflection type multi-layer film mirrors 304, each of which includes an n-type Al.sub.0.9 Ga.sub.0.1 As layer and an n-type Al.sub.0.2 Ga.sub.0.8 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 780.+-.30 nm. On the multi-layer film mirror 304, there are sequentially formed a cladding layer of n-type Al.sub.0.5 Ga.sub.0.5 As 305, an active layer of p-type Al.sub.0.13 Ga.sub.0.87 As 306, another cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 307 and a contact layer of p-type Al.sub.0.15 Ga.sub.0.85 As 308, utilizing the epitaxial growth in the MOCVD process (FIG. 7a). At this time, for example, the formation of these layers was carried out, for example, under such a condition that the temperature on growth is 720.degree. C. and the pressure on growth is 150 Torr. and used organic metals such as TMGa (trimethyl gallium) and TMAl(trimethyl aluminum) as III-group materials, AsH.sub.3 as V-group material, H.sub.2 Se as n-type dopant and DEZn (diethyl zinc) as p-type dopant.

After the growth, a SiO.sub.2 layer is formed on the top of the multi-layered structure in the atmospheric pressure by the thermal CVD process. A photoresist is then applied over the SiO.sub.2 layer and baked at a raised temperature to form a hard baked resist. A further SiO.sub.2 layer is formed over the hard baked resist by the EB deposition.

The respective layers formed on the substrate are then etched by the use of the reactive ion etching process (RIE process). The SiO.sub.2 layer formed on the hard baked resist 313 is First subjected to the conventional photolithograph to form a necessary resist pattern. This resist pattern is then used as a mask to perform the RIE process against the SiO.sub.2 layer. For example, the RIE process may be carried out by using CF.sub.4 gas under a pressure of 4.5 Pa and an input RF power of 150 W and by controlling the sample holder at 20.degree. C. This SiO.sub.2 layer is then utilized as a mask to etch the hard baked resist 313 by the RIE process which uses, for example, O.sub.2 gas under a pressure of 4.5 Pa and an input power of 150 W and controls the sample holder at 20.degree. C. At the same time, the resist pattern initially formed on the SiO.sub.2 layer is also etched. In order to etch both the SiO.sub.2 layer left in the pattern and the SiO.sub.2 layer 312 formed on the epitaxial layer simultaneously, the etching is again performed by the use of CF.sub.4 gas. By using the thin SiO.sub.2 layer as a mask and performing the RIE process which is one of the dry etching processes against the hard baked resist 313, the latter may include side walls perpendicular to the substrate while maintaining the necessary pattern (FIG. 7b).

The hard baked resist 313 having such vertical side walls is used as a mask in the reactive ion beam etching (RIBE) process so that the cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 307 is etched up to its middle, leaving a plurality of column-like light emitting portions (FIG. 7c). Each of the column-like portions formed in the optical resonator has a rectangular cross-section which is parallel to the semiconductor substrate 302 and has longer and shorter sides A, B. The shorter sides in each column-like portion are parallel to each other. The etching gas used herein is a mixture of chlorine with argon under a pressure equal to 5.times.10.sup.-4 Torr. and a plasma generating voltage equal to 400 V. The RIBE process is carried out at the current density of ion equal to 400 .mu.A/cm.sup.2 on the etching sample while maintaining the sample holder at 20.degree. C. The purpose of etching the cladding layer 307 up to its middle is to provide a refraction waveguide type rib waveguide structure for confining the horizontal injection carriers and light rays in the active layer such that a part of the light rays can be transmitted in the horizontal direction within the active layer.

If the RIBE process in which an ion beam is irradiated perpendicular to the hard baked resist 313 having its vertical side walls and the etching sample to etch them is used, the light emitting portions 320 arranged closed to each other can be separated from each other by a separation groove 314 and at the same time it is possible to produce a vertical light resonator which is required to improve the characteristics of the surface emission type semiconductor laser.

After the resist 313 has been removed, a layer of ZnS.sub.0.06 Se.sub.0.94 309 is then buried and formed using the MOCVD process. In the growth, the temperature is 275.degree. C., the pressure is 70 Torr., and the adduct consisting of II group organometallic compound and VI group organometallic compound is DMZn-DMSe (dimethyl zinc and dimethyl selenium). This becomes II group material. The VI group hydride is H.sub.2 Se(hydrogen selenide) and H.sub.2 S (hydrogen sulfide). This becomes VI group material. In this process, a monocrystal layer of ZnS.sub.0.06 Se.sub.0.94 309 grows on the etched top portion while a polycrystal layer of ZnS.sub.0.06 Se.sub.0.94 316 grows on the top portion of the layer of SiO.sub.2 312 (FIG. 7d).

In the growth of the buried layer 309 under this MOCVD process, any "melt-back" phenomenon as in the conventional LPE process will not be created since the temperature in growth is relatively low (e.g. 275.degree. C.) and the process used is a vapor growth process. Thus, the rectangular cross-section of the column-like portion will not be greatly changed.

Subsequently, a resist layer 315 having an increased thickness is applied over the entire surface of the multi-layered structure, with the surface of the resist layer being then flattened (FIG. 7e). By the use of RIBE process, this assembly is etched until the SiO.sub.2 layer 312 is exposed. At this time, the etching rate of the resist 315 is equal to that of the polycrystal ZnS.sub.0.06 Se.sub.0.94 layer 316. Since the SiO.sub.2 layer 312 serves as an etching stop layer, the etched surface can be flattened.

After the SiO.sub.2 layer has been removed by using the conventional wet-etching process, four pairs of multi-layered dielectric film mirrors of SiO.sub.2 /a-Si 311 are then formed on the surface of the multi-layered structure by the use of electron beam deposition. Thereafter, the material is removed except part of the light emitting portion 320 separated by using the dry-etching process and the buried layer sandwiched by the light emitting portions 320 (FIG. 7f). The reflectivity of the multi-layered dielectric film mirror at wavelength of 780 nm is 95% or more. Since the multi-layered dielectric film mirror 311 is also formed over the separation groove 314 buried with ZnSSe, a vertical resonator structure also is formed at the region between the adjacent light emitting portions. As a result, light rays leaked into the separation groove 314 effectively contributes to the laser generation. Since the leaked light rays are utilized, the emitted light can be synchronized with the phase at the light emitting portions 320.

Thereafter, a p-type ohmic electrode 310 is deposited on the top face except the multi-layered dielectric film mirror 311. An n-type ohmic electrode 301 is deposited on the bottom face of the substrate. The structure thus formed is alloyed at 420.degree. C. in the atmosphere of N.sub.2 to complete the surface emission type semiconductor laser 300 (FIG. 7g). The n-type ohmic electrode 310 on the exit side is formed to connect with the contact layer 308 in each of the light emitting portion.

Since the surface emission-type semiconductor laser produced according to this embodiment utilizes the epitaxial ZnSSe layer 309 as a buried layer, it can have a resistance equal to or higher than one G.OMEGA., which is higher than that of the prior art blocking structure using a counter bias at the p-n junction in the AlGaAs layer. This provides an optimum current blocking structure. Moreover, the light leaked from the light emitting portion 320 can be effectively utilized since the buried layer is made of a transparent material having less absorption for the generation wavelength of 780 nm.

In this surface emission type semiconductor laser, further, the plane of polarization in the laser beam emitted from each of the column-like portions is aligned with the direction of shorter sides in the column-like portion of rectangular cross-section. Since the shorter sides of each column-like portion are parallel to each other, the laser beam emitted from one light emitting port provides an increased light emitting spot and is synchronized with those of the other light emitting ports in phase, with alignment in the direction of polarization plane.

FIG. 8 shows the arrangements of the surface emission type semiconductor lasers constructed respectively in accordance with the prior art and the present invention at the exit sides thereof and intensity profiles of NFP when the laser beam is generated. FIG. 8a shows that the resonators 620 of the prior art surface emission type semiconductor laser 600 shown in FIG. 12 are arranged close to one another up to a distance by which the resonators can be fully covered by the epitaxial layers of GaAlAs 607 and 608 connected with each other at the n-p junction, that is, a distance equal to about 5 .mu.m. Although the exit face of the laser actually includes the multi-layered dielectric film mirror and the p-type ohmic electrode formed thereon, they are omitted in FIG. 8 for clear illustration. FIG. 8b shows an intensity profile of NFP between points a and b in FIG. 8a. The surface emission type semiconductor laser of the prior art only can provide a plurality of adjacent light spots even if a plurality of light emitting portions 620 are arranged close to each other. This is because the semiconductor laser of the prior art has NFP of multi-peak property without lateral leakage of light.

FIG. 8c shows the configuration of the surface emission type semiconductor laser constructed according to this embodiment wherein the separation groove is filled with a ZnS.sub.0.06 Se.sub.0.94 layer 409 which Formed by the vapor phase epitaxy method. Thus, the minimum width of the separation groove can be equal to one .mu.m. FIG. 8d shows NFP between points c and d in FIG. 8c. It will be apparent from this NFP that the light emission spot is enlarged since light rays exit also from above the separation groove 314. Since the adjacent laser beams are synchronized with each other in phase, the light output can be increased with a circular beam being provided having an angle of radiation being equal to or less than one degree.

Table 2 shows the relationship between the width of the separation groove 314 of the surface emission type semiconductor laser 300 and the order of transverse generation mode measured from NFP.

If the width of the separation groove is less than 10 .mu.m, the transverse generation mode of the laser synchronized in phase is in the basic mode. If the width is equal to or more than 10 .mu.m, the laser will be generated in an order equal to or higher than one. In this case, the laser beam will be of an elliptic configuration with its increased angle of radiation. This is undesirable in all the applications. If the separation groove has a width less than 0.5 .mu.m, the laser beam will not be circular.

Although the embodiments have been described as to a single optical resonator including a plurality of light emitting portions spaced away from one another, a plurality of such optical resonators may be formed on the same semiconductor substrate. If each of the optical resonators has a p-type ohmic electrode at its exit side, a laser beam from each optical resonator may be independently controlled with respect to ON, OFF and modulation.

Although the embodiments have been described as to the surface emission type semiconductor laser made of GaAlAs materials, the other III-V group compounds may be equivalently used in the present invention. Particularly, the generation wavelength may be varied by changing the composition of Al in the active layer of Ga.sub.0.87 Al.sub.0.13 As.

Although this embodiment has been described in connection with the structure shown in FIG. 6 and the light emitting portion shown in FIG. 8c, the present invention is not limited to such an arrangement.

FIG. 9 illustrates an example in which four optical resonators each having four light emitting sections 320 as formed according to the third embodiment of the present invention are arranged on a semiconductor substrate 302. In FIG. 9a, each of the optical resonators includes an electrode 310 formed therein, the electrode 310 having a single light emitting port 330 which is located at a position opposite to all the four light emitting sections 320. The shorter sides in the rectangular cross-section of the four light emitting sections 320 defining each optical resonator are set to be parallel to one another. Therefore, the plane of polarization in the laser beam emitted from each of the four light emitting ports 330 will be aligned to be parallel to the shorter sides in the column-like portion of rectangular cross-section.

FIG. 9b shows that four laser beams from the semiconductor laser including the four optical resonators are caused to pass through a polarizing filter 340. Since the four laser beams are aligned with one another in plane of polarization, all of them can pass through the polarizing filter 340.

FIG. 9c illustrates another example that one optical resonator has four column-like portions of rectangular cross-section which has shorter sides different in direction from, for example, perpendicular to those of the other optical resonator. In such a case, one of the laser beams can be caused to pass through the polarizing filter 340, as shown in FIG. 9d. However, the other laser beam cannot pass through the polarizing filter 340. By utilizing such a technique, only a laser beam having its plane of polarization in a particular direction can be selectively caused to pass through the polarizing filter. This is very preferable in the field of optical communication.

The embodiments shown in FIGS. 10a-10c includes light emitting portions of n in number and is advantageous in that it can produce a light emitting spot formed into any desirable size and form, in addition to the same advantages as in the embodiment of FIG. 6. In all the embodiments shown in FIGS. 10a-10c, a line beam may be provided by disposing a plurality of light emitting portions in row and/or column on a two-dimensional plane parallel to the substrate.

In the first to third embodiment described, the direction of polarization plane in the emitted laser beam is controlled by the optical resonators which have column-like portions of rectangular cross-section formed therein. However, laser beams having their polarization planes aligned with one another in the direction of shorter sides may be formed even by the formation of light emitting ports 330 in the exit side electrodes 110, 210 and 310 into rectangular opening configuration. In an embodiment shown in FIG. 11a, the cross-section of a column-like portion is circular while a light emitting port 330 formed in the electrode 110 has its rectangular opening configuration having longer and shorter sides a, b. In such a case, the plane of polarization in the emitted laser beam will be aligned with the shorter sides of the rectangular light emitting port 330 in direction.

The formation of the light emitting port into rectangular opening configuration is more convenient than the formation of the optical resonator column-like portion :into rectangular cross-section. If an optical resonator is formed to have a plurality of column-like portions, each of the column-like portions may not be shaped into rectangular cross-section, depending on the arrangement of column-like portions. In such a case, the formation of the optical resonator column-like portion into rectangular opening configuration is effective in setting the direction of polarization plane. FIGS. 11b and 11c illustrate examples that the cross-section of four column-like portions is circular or regularly polygonal and that a rectangular light emitting port 330 is formed at an area opposite to each of the column-like portions. FIG. 11d illustrates still another example that the cross-section of four column-like portions is rectangular while a light emitting port 320 formed at an area opposite to all the four column-like portions has a rectangular opening configuration. The shorter sides in all the column-like portions of rectangular cross-section are set to be parallel to those of the light emitting port. Such an arrangement as shown in FIG. 11d is more superior in that the direction of polarization plane in the emitted laser beam can be set by processing both the cross-section of the column-like portion and the opening configuration of the light emitting port.

FIG. 13 shows a cross-sectional view of an emitting portion of a semiconductor laser 400 and FIG. 14 shows an active layer, constructed in accordance with one embodiment of the present invention.

The semiconductor laser 400 in this embodiment has substantially the same structure and process of manufacturing as the semiconductor laser 100 in the first embodiment except the structure of the active layer.

The semiconductor laser 400 comprises a substrate of n-type GaAs 402 over which a buffer layer of n-type GaAs 403 is formed. Over the buffer layer 403, there are formed 30 pairs of distribution reflection type multi-layer film mirror 404 which include an n-type Al.sub.0.7 Ga.sub.0.3 As layer and an n-type Al.sub.0.1 Ga.sub.0.9 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 870 nm. On the multi-layer film mirror 404, there are sequentially formed a cladding layer of n-type Al.sub.0.4 Ga.sub.0.6 As 405, an active layer of multi-quantum well (MQW) structure 406, another cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 407 and a contact layer of p-type Al.sub.0.1 Ga.sub.0.9 As 408, utilizing the epitaxial growth in the MOCVD process.

For example, the active MQW layer 406 comprises three well layers 406a, as shown in FIG. 14. Each of the well layers 406a is sandwiched between a pair of upper and lower barrier layers 406b. Each of the well layers 406a may be formed as of an i-type GaAs film having a thickness equal to 120 Angstroms while each of the barrier layers 406b may be formed as of an i-type Ga.sub.0.65 Al.sub.0.35 As film having a thickness equal to 150 Angstroms.

In the following process, etching a cladding layer of p-type Al.sub.0.4 Ga.sub.0.6 As 407, growing a layer of ZnS.sub.0.06 Se.sub.0.94 409 which is in lattice alignment with GaAs, and forming ohmic electrodes 410 and 401 are performed in the same manner as the first embodiment to produce the semiconductor laser 400.

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried layer 409 of ZnS.sub.0.06 Se.sub.0.94 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer as well as the first embodimet. In this embodiment, further, the active MQW layer 406 contributes to the reduction of generating threshold current.

FIG. 15 shows the relationship between the drive current and the generated light output in the surface emission type semiconductor laser according to this embodiment. In this embodiment, the continuous generation of laser beam can be accomplished in room temperature with a threshold level as low as 10 .mu.A by using the buried layer of II-VI group compound semiconductor 409 and the active MQW layer 406. If any active MQW layer is not used, the continuous generation of laser beam can be attained, but the threshold current will be as large as one mA. The active MQW layer serves to provide a light output at least five times higher than a case where no active layer of MQW structure is taken, for example, 25 mW or higher. Furthermore, the external differential quantum efficiency is increased and the characteristics of the laser is improved by restricting the reactive current.

If the active layer is of MQW structure, its gain is increased with the light output being increased. If the material of the active layer is changed from one to another, the wavelength of generation also is naturally varied. However, the present invention performs the change of the wavelength by varying the MQW structure while using the same material.

The present invention can be applied to a buried type refractive index waveguide structure as well as the second embodiment, as shown in FIG. 16, rather than the aforementioned rib waveguide type refractive index waveguide structure. In this case, the column-like portions of rectangular cross-section are formed to extend to the underlying cladding layer 405. As a result, the active MQW layer 406 will also be formed into a column-like configuration and enclosed by the buried layer 409.

Referring to FIG. 17, there is shown still another embodiment of a phase-synchronization type semiconductor laser 500 constructed in accordance with the present invention, which can increase the dimension of the emission spot.

The semiconductor laser 500 comprises a substrate of n-type GaAs 502 over which a buffer layer of n-type GaAs 503 is formed. Over the buffer layer 503, there are formed 25 pairs of distribution reflection type multi-layer film mirror 504 which includes an n-type Al.sub.0.9 Ga.sub.0.1 As layer and an n-type Al.sub.0.2 Ga.sub.0.8 As layer and have a reflectivity equal to or higher than 98% against light rays having their wavelength substantially equal to 780.+-.30 nm. On the multi-layer film mirror 504, there are sequentially formed a cladding layer of n-type Al.sub.0.5 Ga.sub.0.5 As 505, a waveguide layer 515, an active layer of multi-quantum well(MQW) structure 506, another cladding layer of p-type Al.sub.0.5 Ga.sub.0.5 As 507 and a contact layer of p-type Al.sub.0.15 Ga.sub.0.85 As 508, utilizing the epitaxial growth in the MOCVD process.

At this time, for example, the active MQW layer 506 comprises three well layers 506a, each of which is sandwiched between a pair of upper and lower barrier layers 506b, as shown in FIG. 14. Each of the well layers 506a may be formed of an i-type Ga.sub.0.65 Al.sub.0.35 As film having a thickness equal to 80 Angstroms while each of the barrier layers 506b is made of an i-type Ga.sub.0.95 Al.sub.0.05 As film having a thickness equal to 60 Angstroms. The waveguide layer 515 has a composition of Al ranging between those of the well and barrier layers 506a, 506b and may be formed of an n-type epitaxial layer of Ga.sub.0.75 Al.sub.0.25 As. Such a waveguide layer 515 has a refractive index lower than the equivalent refractive index of the active layer 506 but higher than the refractive index of the underlying cladding layer 505.

In the following process, etching a cladding a layer of p-type Al.sub.0.4 Ga.sub.0.6 As 507 growing a layer of ZnS.sub.0.06 Se.sub.0.94 509 which are in lattice alignment with GaAs, and forming ohmic electrodes 510 and 501 is performed in the same manner as the third embodiment to produce the semiconductor laser 500.

The purpose of etching the cladding layer 507 up to its middle is to provide a refraction waveguide type rib waveguide structure for confining the horizontal injection carriers and light rays in the active MQW layer 506 such that a part of the light rays can be transmitted in the horizontal direction within the active layer. In this embodiment, the propagation of light in the horizontal direction may be assured by the waveguide layer 515.

Since the surface emission type semiconductor laser 500 utilizes the epitaxial ZnSSc layer 509 as a buried layer, it can have a resistance equal to or higher than one G.OMEGA., which is higher than that of the prior art blocking structure using a counter bias at the p-n junction in the AlGaAs layer. This provides an optimum current blocking structure. As a result, the generating threshold current can be reduced. In addition, the active MQW layer 506 also serves to reduce the generating threshold current, for example, to a level of about ten .mu.A as well as the fourth embodiment. Furthermore, the light emitting portions 520 separated from each other by the separation groove 514 can be influenced by each other through the active and waveguide layers 506 and 515. Thus, light rays from the respective light emitting portions 520 can be synchronized with each other in phase, resulting in generation of a laser beam having an increased diameter and an emphasized intensity.

Even though a plurality of column-like portions of rectangular cross-section arranged in a two-dimensional array are formed within a finely small area as mentioned in the third embodiment, the present invention can reduce the reactive current such that the surface emission type semiconductor laser can be simultameously and eontinuousy driven a plurality of the light emitting element in room temperature. In order to increase the advantage of the phase synchronization, the waveguide layer is preferably located at the lower layer section of the active layer of MQW structure. In this case, the influence between the light emitting portions will be emphasized to facilitate the phase synchronization, for example, even if the respective light emitting portions are spaced farther away from one another.

Referring to a semiconductor laser in this embodiment, which is the same type as the aforementioned first embodiment (FIG. 1), the exit-side multi-layered dielectric film mirror 111 is formed to have a surface area ranging between 10% and 90% of the surface area of the contact layer 108.

An opening of the exit-side electrode in which the exit-side multi-layered dielectric film mirror 111 is to be located is formed at a region in which the highest light emission efficiency can be obtained, that is, within a range including the geometric center of the contact layer 108. If the cross-sectional area of the opening is larger than 90% of the surface area of the contact layer 108, it becomes difficult to perform the continuous generation in room temperature since the resistance is increased. On the contrary, if the cross-sectional area of the opening is less than 10% of the surface area of the contact layer 108, the opening is too small to provide a necessary light output. Therefore, the opening area should be ranged between 10% and 90% of the surface area of the contact layer. If so done, the configuration and magnitude of the light spot may be changed without any change of the cross-sectional shape of the column-like portions parallel to the semiconductor substrate, depending on the shape and cross-sectional area of the opening.

The surface emission type semiconductor laser thus formed provides a very effective current restriction since the buried layer 109 of ZnS.sub.0.06 Se.sub.0.94 has a resistance equal to or higher than one G.OMEGA. and there is no injection current into the buried layer, as well as the aforementioned first embodiment. Since it is not required that the buried layer is any multi-layered structure, it can be more easily grown with an increased reproductiveness consistency from one batch to another. The utilization of the rib waveguide structure using the ZnS.sub.0.06 Se.sub.0.94 layer having its refractive index sufficiently smaller than that of GaAs can realize a more effective light confinement. And the continuous generation can be accomplished at room temperature and the threshold is very low, or equal to one mA. Furthermore, the external differential quantum efficiency is increased and the characteristics of the laser is improved by restricting the reactive current.

Considering the configuration of a generated laser beam, it will be apparent that the present embodiment does not depend on the rectangular cross-sectional shape of the light emitting portions since the shape and magnitude of the laser beam is determined depending on the configuration of the opening in the P-type ohmic electrode 110, that is, the configuration of the multi-layered dielectric film mirror 111 formed in the opening. As shown in FIGS. 18a and 18b, if the opening 130 is of a circular cross-section, a finely circular laser beam can be obtained. The diameter of the laser beam shown in FIG. 18a is larger than that of the laser beam shown in FIG. 18b. In other words, a laser beam having its desired cross-sectional shape and diameter may be provided simply by changing the cross-sectional shape and area of the opening 130. As will be apparent from FIGS. 18c and 18d, a near circular beam may be obtained even if the opening 130 is of a regular polygon.

Although the aforementioned embodiment refers to a rib waveguide type refraction waveguide structure, that embodiment is also applicable to a semiconductor laser divice of buried type refraction waveguide structure mentioned in the second embodiment.

Referring to a semiconducter laser in this embodiment, which is the same type as the third embodiment (FIG. 6), the exit-side multi-layered dielectric film mirror 311 includes the geometric center of each contact layer 308 in plurarity of the light emitting portions, and is formed within the opening formed in an area ranged between 10% and 90% of the surface area of the contact layer 308.

There will now be described the configuration of the opening formed over the light emitting portions and the buried layer 309 therebetween. FIGS. 19a-19d exemplify various configurations which can be taken in an opening 330 formed at a position opposed to four light emitting portions 320 of rectangular cross-section and a buried layer 309 therebetween. FIGS. 19a and 19b show circular openings 330, the opening shown in FIG. 19a providing a laser beam having a circular cross-section with its diameter larger than that of the laser beam shown in FIG. 19b. FIG. 19c shows a square opening 330 which can provide a laser beam having its near circular cross-section. The magnitude of the square opening 330 may be changed to generate a laser beam having a desired diameter in cross-section. The opening 330 may be formed into any polygonal cross-sectional configuration other than the square. FIG. 19d exemplifies an opening 330 formed over the four light emitting portions 320 of rectangular cross-section and the buried layer 309 therebetween. In any event, the opening 330 is formed at a position including the geometric center of the corresponding one of the four light emitting portions 320 and ranging between 10% and 90% of the surface area of the exit-side end face of the respective light emitting portions 320.

The number and arrangement of the light emitting portions 320 may be suitably selected to be other than those of the aforementioned embodiments. For example, a plurality of light emitting portions 320 may be equidistantly arranged in row and/or column and an opening 330 may be formed at a position opposite to the respective one of the light emitting portions 320 and the adjacent buried layer 309. In such a manner, a line beam can be obtained.

Even if a laser beam is to be generated from a plurality of column-like portions in the above manner, any desired light spot may be provided simply by changing the configuration and cross-sectional area of the openings in the respective exit-side electrodes. This is very advantageous in that the configuration and magnitude of the light spot can be varied without any change in the cross-sectional shape and spacing of the column-like portions.

If a plurality of optical resonators each consisting of plural column-like semiconductor layers are formed on the semiconductor substrate with one of the exit-side electrodes each having a single opening being independently formed for each resonator, a plurality of laser beams each having an increased light spot may be independently controlled with respect to ON, OFF and modulation.

It is to be understood that the surface emission type semiconductor laser of the present :invention may be equivalently applied to any desirable light source in various devices such as printer, copying machine, facsimile, display and so on.

FIG. 20 schematically shows the arrangement of an apparatus for producing the II-VI group compound semiconductor layers constructed according to the respective embodiments of the present invention.

Referring to FIG. 20, II group material is supplied by bubbling a cylinder 802 containing DMZn-DMSe adduct with hydrogen from a hydrogen cylinder 801. On the other hand, VI group material is supplied from an H.sub.2 Se cylinder 808 containing 10% H.sub.2 Se diluted by hydrogen and an H.sub.2 S cylinder 804 containing 10% H.sub.2 S diluted by hydrogen. The materials are supplied to a reaction pipe 805 wherein a ZnSSe layer grows on a substrate placed on a carbon susceptor 806 which is heated by a high-frequency oscillator 808. The pressure in the reaction pipe 805 can be regulated by adjusting the exhaust from an exhausting system 807.

This apparatus is characterized by that the ZnSSE layer can be uniformly grown at lower temperatures over an increased extent with improved crystallinity.

Although the embodiments of the present invention have been described as to the formation of the II-VI group compound semiconductor layer from ZnS.sub.0.06 Se.sub.0.94 the II-VI group compound semiconductor layer may be formed of ZnSe, ZnS, ZnCdS, CdSSe and superlattice compound such as ZnS-ZnSe. However, it is preferable that the lattice parameter of the buried layer is consistent with that of the substrate. Adducts and hydrides which are desirably used to form the II-VI group compound semiconductor layer are shown in Table 3.

FIG. 21 is a perspective view showing the cross-section of the light emitting part of a semiconductor laser 600 which is the ninth embodiment of the present invention. This semiconductor laser is different from the previously described embodiments mainly in that the buried layer of the ninth embodiment embedded around the periphery of the resonator means is formed of a different material. Steps of producing the semiconductor laser will be described sequentially.

On a n-type GaAs substrate 602, n-type Al.sub.0.8 Ga.sub.0.2 As and n-type Al.sub.0.15 Ga.sub.0.85 As layers are alternately deposited 40 times to form a distributed reflection type multi-layer film (DBR) mirror having 99.5% or more reflectance relative to light having its wavelength equal to about 800 nm. After a n-type Al.sub.0.7 Ga.sub.0.3 As clad layer 604 has further been formed, an active layer 605 of quantum-well structure is formed by alternately depositing n-type GaAs well and n-type Al.sub.0.3 Ga.sub.0.7 As barrier layers. It is desirable that the film-thickness of the well layer ranges between 40 and 120 Angstroms and is preferably equal to 61 Angstroms; the film-thickness of the barrier layer ranges between 40 and 100 Angstroms and preferably is equal to 86 Angstroms; and the total number of well layers ranges between 10 and 40 and preferably is equal to 21. Thus, the surface emission type semiconductor laser can be reduced in threshold value, increased in output and improved in temperature characteristic and oscillating wavelength reproduction.

Thereafter, p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 606 and p-type Al.sub.0.15 Ga.sub.0.85 As contact layer 609 are sequentially deposited. Each of these layers may be formed through the organic metal vapor growth process as in the first embodiment.

After formation of all the layers, the laminated assembly is etched to the intermediate depth of the p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 606 through the reactive ion beam etching process (which will be referred to RIBE process), leaving a column-like light emitting part covered with resist. This provides a column-like resonator part having the same cross-section as the profile of the overlying resist layer.

In the ninth embodiment, the cross-section of the resonator means parallel to the semiconductor substrate 602 is a rectangular configuration having longer and shorter sides A,B, as in FIG. 1b. Therefore, the plane of polarization of the laser beam emitted from this surface emission type semiconductor laser can be aligned with a specific direction which is coincide with the direction of shorter sides B, as in the previous embodiment. For the same reason as in the first embodiment, it is preferred that B<A<2.times.B. It is more preferable that 1.1.times.B.ltoreq.A.ltoreq.1.5.times.B. The reason why the p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 606 is etched only to its intermediate depth will be described later.

A buried layer is next formed over the p-type Al.sub.0.7 Ga.sub.0.3 As clad layer 606. The buried layer of the ninth embodiment is formed of a material different from those of the previously described embodiments. In the ninth embodiment, after the resist has been removed, a insulation silicon compound film 607 and a flattening layer 608 are formed.

The insulation silicon compound film 607 may be formed of any one selected from a group consisting of silicon oxides (SiOx) such as SiO.sub.2, silicon nitrides (SiNx) such as Si.sub.3 N.sub.4, silicon carbides (SiCx) such as SiC and the like. The insulation silicon compound film 607 may be formed through any process selected from a group consisting of normal pressure/thermal CVD, reduced pressure/thermal CVD, plasma CVD, reactive deposition and the like, depending on the material used. In the present embodiment, the insulation silicon compound film 607 is formed of SiOx such as SiO.sub.2. The SiOx film 607 is formed through the normal pressure/thermal CVD process, preferably, into a film-thickness ranging between 500 and 2000 Angstroms. During the process, the temperature of the substrate was set at 450.degree. C.; and the process gas included monosilane (SiH.sub.4) in the flow rate of 9 sccm, oxygen(O.sub.2) in the flow rate of 50 sccm, and a carrier gas or nitrogen (N.sub.2) in the flow rate of 5 slm. The growth speed of SiOx was 12.5 Angstroms/min.

The flattening insulating layer 608 is preferably formed of a material workable at a temperature lower than the working temperature of the insulation silicon compound film 607, such as SOG (Spin On Glass). Alternatively, the flattening insulation layer may be formed of polyimide film. The film-thickness of SOG film may be range between 0.5 .mu.m and 1.5 .mu.m while the film-thickness of polyimide film may range between 4 .mu.m and 6 .mu.m. In any event, the film may be formed through the spin coating step and the subsequent baking step. The reason why the film-thickness of the SOG film is smaller than that of the polyimide film is because the SOG film having an increased film-thickness tends to be cracked in the baking step. In addition, the flattening insulation layer 608 may be formed of a polycrystalline II-VI group compound semiconductor film such as ZnSe or an insulation silicon compound (e.g., SiOx, SiNx, SiCx or the like) workable through a process of lower temperature than that of the film 607. For example, if an SiOx film such as SiO.sub.2 is formed through the electron beam deposition, the flattening insulation silicon compound layer can be formed at a temperature lower than that of the heat CVD process. In the present embodiment, a vitreous solution containing 20% of SiO.sub.2 by weight was applied on a substrate to form the SOG film 608 while spinning the substrate at 3000 r.p.m. for 20 seconds. Thereafter, the substrate including the SOG film thereon was sequentially baked at 80.degree. C. for one minute, at 150.degree. C. for two minutes and at 300.degree. C. for 30 minutes in an atmosphere of N.sub.2.

The SOG film 608 was etched back and flattened flush with the surface of the exposed contact layer 609 through the reactive ion etching (RIE) process which used parallel flat plate-like electrodes, a reactive gas in the form of a mixture containing SF.sub.6 and Ar in a ratio of 1:1 and a chamber pressure equal to 20 mTorr. The etching rate was equal to 1000 Angstroms/min.

On the etching process, only the SiOx layer 607 was etched since its etching rate is lower than that of the SOG layer 608. This was accomplished by using the same RIE process under such conditions that CHF.sub.3 gas was introduced as a reactive gas into the chamber with its internal perssure equal to 18 mTorr. The etching rate was equal to 400 Angstroms/min.

Subsequently, a contact electrode 612 is formed in ring-like contact with the contact layer 609. The contact layer is exposed through the circular opening of a contact electrode 612. A dielectric multi-layer film mirror 611 is formed sufficiently over the exposed surface. The mirror 611 is formed by depositting an SiOx layer such as SiO.sub.2 and a Ta.sub.2 O.sub.5 layer alternately seven times, for example, and has 98.8% or more reflectance relative to light having a wavelength of about 800 nm. In the ninth embodiment, the mirror 611 is formed not only in the opening of the electrode 612, but also over the electrode 612 to ensure the desired thickness of the seven-pairs layered laminate. The Ta.sub.2 O.sub.5 layer defining the dielectric multi-layer film mirror 611 may be replaced by ZrOx film, ZrTiOx film or TiOx film. Since the mirror 611 is not of a structure in which the electric current flows through the mirror itself as in the P-type DBR mirror, its resistance can be reduced. Thus,the surface emission type semiconductor laser can be reduced in threshold level and improved in external differential quantum efficiency.

Thereafter, a electrode 601 consisting of Ni and Au-Ge alloy is formed under the substrate 602 to complete the surface emission type semiconductor laser 600.

A forward voltage is applied between upper and lower electrodes 612, 601 to inject the current into the semiconductor laser (in the present embodiment, the voltage being applied in a direction from the upper electrode toward the lower electrode). The injected current is converted into light at the quantum-well type active layer 605. The light is reciprocated and amplified between the reflecting mirrors, that is, the n-type DBR mirror 603 and the dielectric multi-layer film mirror 611. Thus, a laser beam will be emitted through the opening in the first direction shown by 610.

The silicon oxide or SiOx film 607 such as SiO.sub.2 shown in FIG. 21 is formed through the normal pressure/thermal CVD process (vapor growth process) with the filmthickness ranging between 500 Angstroms and 2000 Angstroms. The flattening insulation layer 608 is required to flatten the surface of the element. For example, the flattening insulation layer made of heat-resistant resin can increase the resistance, but tends to produce a residual moisture in the film. If such a film is placed in direct contact with the semiconductor layer, voids may be created in the interface between the flattening insulation layer and the semiconductor layer to degrade the characteristics of the element when it is electrically energized for a long time. If the film 607 such as silicon oxide film is formed in the interface between the flattening insulation layer and the semiconductor layer, however, the silicon oxide film 607 serves as a protection layer to prevent the degradation of the element.

Although the silicon oxide film 607 may be formed by any one of plasma CVD, reactive deposition and other suitable processes, it was most suitably formed through the normal pressure/thermal CVD process which used SiH.sub.4 (mono-silane) and O.sub.2 (oxygen) gasses and utilized N.sub.2 (nitrogen) gas as a carrier gas. This is because since the normal pressure/thermal CVD process is carried out under the atmosphere and forms the film under such a condition that O.sub.2 is excessively used, the SiOx film becomes more dense with less deficit of oxygen and the step coverage is improved to provide the same thickness on the sides of the column-like resonator and on the clad layer 606. In addition, the vapor growth will not change the resonator configuration due to melt-back, unlike the lilquid phase growth.

The other reason why the thin silicon oxide film 607 is formed is that impurities (e.g., sodium, chlorine, heavy metals) contained in the subsequently formed insulator 608 can be prevented from heat-diffusing into the underlying p-type clad layer 606 and quantum-well type active layer 605. The thin silicon oxide film 607 may only have a sufficient film-thickness to arrest the impurities. Since the thin silicon oxide film 607 is formed through the thermal CVD process, it is more dense than that of the subsequently formed insulator 608. Since the present embodiment utilizes the thermal CVD process, however, the silicon oxide film 607 is formed into a multi-layered film having an increased thickness, in consideration of the influence of heat to the element. In other words, the present embodiment provides a double-layered structure comprising the thin silicon oxide film 607 and the insulator 608 which can be formed at a lower temperature without need of the dense structure. It is therefore preferred that the silicon compound film 607 has its film-thickness equal to or larger than 500 Angstroms in such a view point that the impurities are prevented from diffusing from the flattening insulation layer 608. More particularly, the film-thickness of the silicon compound film 607 is equal to or smaller that 2000 Angstroms in such a view point that the process time is shortened to reduce the adverse affection of heat. However, the process condition, particularly the process temperature may be lowered to form the buried layer of only a single silicon compound layer 607.

It is further preferred that the p-type clad layer 606 having its thickness ranging between 0 and 0.58 .mu.m remains between the buried layers 607,608 and the quantum-well type active layer 605. This film-thickness is more preferably ranging between 0 and 0.35 .mu.m. As a result, the surface emission type semiconductor laser will not have an interface recombination current at the buried layer parts and can be improved in efficiency and reliability.

Even if the cross-section of the column-like light resonator is formed into a circular configuration rather than the rectangular configuration while at the same time the light emitting port of the exit electrode 612 is formed into a rectangular configuration having longer and shorter sides a and b as shown in FIG. 11a, the semiconductor laser can emit a laser beam having a plane of polarization aligned with the shorter sides b. As described in the fourth embodiment, the dimensional relationship between the longer and shorter sides of the rectangular configuration is preferably b<a<2b and more preferably 1.1.times.b.ltoreq.a.ltoreq.1.5.times.b. As described in connection with the fourth embodiment, furthermore, the column-like part and light emitting port may be of rectangular cross-section and their shorter sides may be parallel to one another.

The buried layers 607,608 provided by the ninth embodiment may be used to form grooves for separating the column-like parts from one another as shown in the third embodiment. Thus, laser beams can be emitted from a plurality of light emitting portions corresponding to the respective column-like parts in the phase-locked relationship. The buried layers 607, 608 embedded in the separating grooves can be made of a material substantially transparent to the wavelength of the laser beam. For example, if the buried layers are formed of SiOx or SiNx, they will substantially transparent to the laser beam wavelength. As in the third embodiment, therefore, the laser oscillation can more effectively be performed not only by the laser beams from the light emitting portions but also by any leak light into the buried layers to increase the light emission spot. The light emitting parts formed in the column-like parts may be arranged in a line.