Nonvolatile Memory Card With Ready and Busy Indication and Pin Count Minimization

1. A nonvolatile memory, comprising: (A) a memory array; (B) a control circuit coupled to the memory array for controlling memory operations with respect to the memory array; (C) an output pad for applying a signal to an external circuit indicating that the control circuit is busy with respect to one of the memory operations; (D) a circuit coupled to the output pad and the control circuit for connecting the output pad to a ground potential to generate the signal at the output pad, wherein the circuit further comprises an open drain transistor circuit coupled between the output pad and the ground potential such that the output pad of the nonvolatile memory can be tied together with an output pad of another nonvolatile memory; (E) an input pad for receiving a global power down control signal; (F) a power down control register coupled to the control circuit for receiving a software power down control signal; (G) a logic gate coupled to the input pad and the power down control register for performing a logic function to the global power down control signal and the software cower down control signal such that the nonvolatile memory can be cowered down by one of the global power down control signal and the software power down control signal.

2. The nonvolatile memory of claim 1, wherein the transistor has a gate coupled to receive a control signal from the control circuit that controls the transistor to couple the output pad to the ground potential.

3. The nonvolatile memory of claim 2, wherein the circuit further comprises a register circuit for storing the control signal from the control circuit.

4. The nonvolatile memory of claim 2, wherein the circuit further comprises a pulse generation circuit for supplying the control signal from the control circuit to the transistor in a pulse format.

5. The nonvolatile memory of claim 3, wherein the control circuit generates the control signal to cause the circuit to couple the output pad to the ground potential when the control circuit is busy with respect to one of the memory operations.

6. The nonvolatile memory of claim 5, wherein the one of the memory operations is an erasure operation.

7. The nonvolatile memory of claim 1, wherein the memory array includes memory cells that are electrically programmable and electrically erasable.

8. A memory card for use in a computer system, comprising: (A) a plurality of nonvolatile memories, wherein each of the memories further comprises (i) a pad for applying a busy signal indicating that a respective one of the memories is busy with respect to a memory operation; (ii) a circuit coupled to the pad and a control circuit for coupling the pad to a ground potential in order to generate the busy signal at the pad, wherein the circuit further comprises an open drain transistor circuit coupled between the pad and the ground potential, wherein the pad of each of the memories is coupled to a node external to the memories; (iii) an input pad for receiving a global power down control signal; (iv) a power down control register coupled to the control circuit for receiving a software power down control signal; (v) a logic gate coupled to the input pad and the power down control register for performing a logic function to the global power down control signal and the software power down control signal such that the nonvolatile memory can be powered down by one of the global power down control signal and the software power down control signal; (B) a resistive circuit coupled to the node for coupling a first voltage to the node, wherein when each of the memories does not output the busy signal at the pad, the node assumes a voltage which is approximately equal to the first voltage, wherein when at least one of the memories outputs the busy signal, the node assumes the ground potential; (C) a card control logic for interfacing the memories with an external circuit, wherein the card control logic further comprises (a) an output pin for supplying a card busy signal to the external circuit when at least one of the memories is indicated to be busy with respect to the memory operation; (b) an input pin coupled to the node for receiving the card busy signal at the node, wherein the input pin receives the card busy signal when the node assumes the ground potential; (c) a pass logic coupled to the input and output pins for passing the card busy signal directly from the input pin to the output pin such that the card control logic has minimized pin count.

9. The memory card of claim 8, wherein the transistor has a gate coupled to receive a control signal that controls the transistor to couple the pad to the ground potential in order to supply the busy signal.

10. The memory card of claim 9, wherein the circuit further comprises a register circuit for storing the control signal.

11. The memory card of claim 9, wherein the circuit further comprises a pulse generation circuit for supplying the control signal from the control circuit to the transistor in a pulse format.

12. The memory card of claim 8, wherein the memory operation is an erasure operation.

13. The memory card of claim 8, wherein the resistive circuit further comprises a resistor.

14. The memory card of claim 8, wherein each of the plurality of memories includes memory cells that are electrically programmable and electrically erasable.

15. The memory card of claim 8, wherein the pass logic is a single output driver for driving the card busy signal from the input pin to the output pin.

16. The memory card of claim 8, wherein the card control logic further comprises a power down control logic for generating the global power down control signal to the input pad of each of the nonvolatile memories such that the card control logic has minimized pin count to enable high storage capacity.

17. A nonvolatile memory, comprising: (A) a memory array; (B) a control circuit coupled to the memory array for controlling memory operations with respect to the memory array; (C) an input pad for receiving a global power down control signal; (D) a power down control register coupled to the control circuit for receiving a software power down control signal; (E) a logic gate coupled to the input pad and the power down control register for performing a logic function to the global power down control signal and the software power down control signal such that the nonvolatile memory can be powered down by one of the global power down control signal and the software power down control signal.

18. The nonvolatile memory of claim 17, wherein the logic gate is an AND gate.