Field of the Invention
The present invention relates to an analog-to-digital (A/D) converter for converting an analog signal into a digital signal with predetermined descrete levels.
Background of the Invention
As shown in FIG. 5, conventionally and generally, an A/D converter distributes an input voltage Vin by voltage divider DV1, compares the distributed voltage with an offset voltage using comparator array C, and converts the result of comparison into a digital signal having a predetermined bit width using encoder ED to provide an output D. The offset voltage is generated by reference voltage generating means, such as DV0.
In this way the conventional A/D converter has a rather large circuit and consumes a relatively large amount of electric power.
Summary of the Invention
The present invention solves the above problems and has an object to provide an A/D converter realized by a small size circuit.
An A/D converter according to the present invention uses field effect transistor (FETs)) comprising plural gates as inverse logic. Inverting each output, a digital value can be obtained.
Brief Description of the Drawings
FIG. 1 shows a circuit of an embodiment of the A/D converter according to the present invention.
FIG. 2 shows a graph curve of the characteristic of inverting step circuit shown in FIG. 1.
FIG. 3 shows a graph of the digital output in the embodiment.
FIG. 4 shows a concept of an FET in the embodiment.
FIG. 5 shows a circuit of a conventional A/D converter.
Preferred Embodiment of the Present Invention
Hereinafter an embodiment according to the present invention is described with reference to the attached drawings.
FIG. 1 shows an A/D converter an for converting input voltage Vin into a digital value of 4 bits. The A/D converter consists of FETs from T0 to T3 each of which has a plural number of gates. These FETs each correspond to a digit place of the digital value: T0, T1, T2 and T3 correspond to the LSB, the second digit, the third digit and MSB, respectively.
The input voltage Vin is input to G01, G11, G21 and G31 each of which are one of the gatesof an FET. The output of each FET is inverted in an inverting step circuit by inverting IV0 to IV3 and the output for each digit place D0 to D3 are generated.
The output of the FET corresponding to the upper digit place is input to a gate of each of FETs T0 to T3, simultaneously and, offset voltage Vt0 to Vt3 generated in the voltage divider DV are input as well. The offset voltage determines the upper limit of the digit place corresponding to each FET. Each FET outputs the inverted value of the digit place according to the input voltage Vin, the output of the upper FETs and the offset voltage from voltage divider DV. FET has the characteristic of addition with respect to the gate voltage and becomes conductive when the summation of the gate voltage is equal to or greater than the offset voltage from DV (it is OV in the description below), and then the impressive voltage of drain is generated in the source.
The output of each FET is input to inverting step circuits from IV0 to IV3, and the output of each digit place can be obtained according to the characteristic in FIG. 2. In an inverting step circuit, the output "v0" is 0 for any plus input "vi" and the voltage "vu" is generated for a minus input corresponding to a digital "1". The offset voltage from Vt0 to Vt3 are determined as below.
The action of the FET is described using as an example FET "T0" of LSB in FIG. 4.
FET "T0" comprises five gates G01, G02, G03, G04 and G05. Offset voltage Vt0 is impressed on drain D. As shown below, each gate receives an input.
Gate G01: Input voltage Vin
Gate G02: Output of FET T3
Gate G03: Output of FET T2
Gate G04: Output of FET T1
Gate G05: Offset voltage Vt0
Representing the voltage to be impressed to gates from G01 to G05 by V1 to V5, respectively, and the step function by S(), a function can be obtained as below. ##EQU1## The formula in (1) can be varied as below. ##EQU2##
For example when Vin is 10.times.vu, FET T3 is conductive and Vt3 (=8.times.vu) is input to the gate of FET T2. Then, (Vin+Vt2+Vt3), which is equal to (10-4-8) vu, which is equal to -2 vu is input to the gate of FET T2: but FET T2 does not become conductive because the input is not positive value. The gate voltage below is provided to FETs T1 and T0.
T1: (Vin+Vt1+Vt3)=(10-2-8)vu=0V
T0: (Vin+Vt1+Vt0+Vt3)=(10-2-1-8)vu=-vu
T1 and T3 become conductive and T0 and T2 does not become conductive. Only IV1 and IV3 receive a minus voltage which is converted into "1" by an inverting step function. As the result, D0 and D2 are 0 and D1 and D3 are 1. That means a digital output "1010" is generated.
The change from D0 to D3 corresponding to the change of input Vin is shown in FIG. 3.
A digital value of 1 bit can be generated by one (1) FET and one (1) inverting step circuit. The size of it is much smaller than the conventional circuit which needs a comparator, an encoder and a resistance. It is easy to realize it by LSI.
As mentioned, it is possible to realize an A/D converter by a small circuit because the A/D converter according to the present invention uses a FET comprising plural gates as the inverted logic of each digit place of digital value, and obtains a digital value by inverting each output.