Memory Circuit Including an EEPROM Provided With Unique Addressing Means for Storing at Selected Memory Cells Frequently Incremented Count Data

1. A non-volatile counter comprising: a counter circuit for generating parallel bit codes in response to externally provided count pulses, said parallel bit codes including higher digit bit codes and lower digit bit codes; an electrically erasable and writable non-volatile memory for storing at least the lower digit bit codes at a memory cell selected by a lower digit controlling circuit on the basis of said higher digit bit codes, said memory cells being arranged in matrix configuration including a plurality of rows and columns; and write controlling means for storing said at least lower digit bit codes in the memory cell selected by said lower digit controlling circuit, said write controlling means including: means for reading the contents of a selected memory cell corresponding to a previous lower digit bit code stored therein and comparing said contents to a current lower digit bit code to be written in the selected memory cell; means for erasing the contents of said selected memory cell before writing said current lower digit bit code thereto when said previous lower digit bit code differs from said current lower digit bit code at more than one bit position relative to each other, and performing only a single bit write operation otherwise; and column designating means coupled to said lower digit controlling circuit for selecting a memory cell associated with a column adjacent to a first column of a previously stored lower digit bit code when a count operation associated with said first column has been completed.

2. The non-volatile counter of claim 1, wherein said erasing means erases all bit positions of all columns associated with the row of the selected memory cell to be erased.

3. The non-volatile counter of claim 1, wherein said counting circuit generates said parallel bit codes based on coding scheme which minimizes the number of times the erasing means must erase the selected memory cell just before a subsequent lower digit bit code, differing by more than one bit position from a previous lower digit bit code, must be written thereto, and before a count operation associated with said selected memory cell has ben completed.