US 4,997,795 AGrant
Dielectric Compositions of Devitrified Glass Containing Small Amounts of Lead Oxide and Iron Oxide
Issue Date:1991-03-05
•17 Claims
Abstract
An improved dielectric formulation for the fabrication of multilayer, integrated circuits which comprises a devitrifying zinc-magnesium-barium-aluminum-zirconium-phosphosilicate glass frit, a devitrifying zinc-magnesium-barium-aluminum-silicate glass frit, or a devitrifying zinc-magnesium-strontium-aluminum-silicate glass frit which are stabilized by the presence of from about 0.01 to about 1 weight percent each of lead oxide and iron oxide.
Metadata
Assignee
- General Electric Company
Inventors
- Kenneth W. Hang
- Ashok N. Prabhu
- Wayne M. Anderson
Application Information
Application Number:US 447273&
Filing Date:1989-12-07
Priority Date:1986-10-02
Art Unit:118
Classifications
IPC:
C03C 804C03C 810
Field of Search:
50110642817;22;24;26;21;8;9;201.05;1.13;1.14210;426;432;901
Patent Drawings
This patent does not have any drawings.
Description
Example 1
Glasses are prepared by weighing the following components, mixing and melting at about 1550.degree. in air in platinum containers. The melts are quenched with dry counter-rotating ferrous metal rollers having a 0.01 inch gap. The coefficient of expansion of each formulation is determined using a fused silica dilatometer. The coefficient of expansion of the glass is given as alpha measured at 900.degree.. The alpha numbers represent a value x 10.sup. -7 cm per cm per degree Celsius.
Inks are prepared comminuting the thin glass ribbons formed by quenching the melts in a ball-mill to achieve a mean particle size of about 5 micrometers. The glass formulations are individually combined with a ceramic filler such as alumina and barium dimagnesium disilicate having an average particle size of about 3 micrometers and an organic vehicle such as a 20 percent solution of poly(isobutylmethacrylate) in Texanol also containing one percent of the surfactant Duomeen TDO. The proportion of the ink are 67.7 percent glass, 5.8 percent alumina, 3.9 percent barium dimagnesium disilicate and 22.6 percent organic vehicle.
The ink ingredients are initially hand-mixed, then mixed on a three-roll mill to make a smooth paste suitable for screen printing. Additional solvent is added as necessary to assure proper rheology. The inks are individually printed onto platinum foil, air-dried at 125.degree.for about 15 minutes, then fired in nitrogen at about 900.degree.for 10 minutes. A second dielectric layer is similarly printed and fired over the first.
Example 2
A copper conductor ink is prepared according to Prabhu et al's copending U.S. Pat. Application Serial No. 914,303 entitled "THICK FILM CONDUCTOR INKS", filed Oct. 2, 1986, the disclosure of which is incorporated herein by reference. The ink contains 76.9 parts of copper powder having an average particle size of 3 micrometers and 7.7 parts of a devitrifying glass frit comprising 9.09 percent of zinc oxide, 30.40 percent of calcium oxide, 18.28 percent of aluminum oxide and 42.23 percent of silicon dioxide. The solid ingredients are mixed with 15.4 parts of an organic vehicle consisting of a 6 percent solution of ethyl cellulose in Texanol, additionally containing the wetting agents Hypothiolate 100 and Armeen O in concentrations of 17 percent and 3 percent, respectively, based on the vehicle. The ink is initially hand-mixed and then mixed on a three-roll mill to obtain a paste suitable for screen printing. Additional solvent was added as required to assure proper rheology.
The copper ink is printed onto a conventional alumina board to form a series of isolated parallel lines 375 micrometers wide separated by spaces of equal width. The copper ink is dried in air at 125.degree. for 15 minutes and fired in nitrogen at 900.degree. for 10 minutes. The dielectric inks of Example 1 are printed, dried, and fired.
A copper via-fill ink was prepared as follows: a devitrifying glass frit consisting of: 21.8 percent of zinc oxide; 16.5 percent of magnesium oxide; 7.8 percent of barium oxide; 39.2 percent of silicon dioxide; 10.7 percent of aluminum oxide; 1.0 percent of phosphorus pentoxide; and 3.0 percent of zirconium silicate and a vitreous glass frit consisting of: 51.59 percent of barium oxide; 12.58 percent of calcium oxide; 15.62 percent of boron trioxide; and 20.21 percent of silicon dioxide are separately prepared and reduced to a particle size of about three micrometers. Solid ingredients consisting of 65 percent of copper powder having an average particle size of three micrometers, 14 percent of devitrifying glass frit and 4 percent of the vitreous glass frit are thoroughly mixed by hand.
The solid ingredients are mixed with 17 parts of an organic vehicle consisting of a 20 percent solution of poly(isobutylmethacrylate) in Texanol additionally containing, as wetting agents, 17 percent of Hypothiolate 100 and 3 percent of Armeen O. The ink is initially hand-mixed and then mixed on a three-roll mill to obtain a paste suitable for screen printing. Additional solvent is added as required to assure proper rheology. The via-fill ink is described in copending U.S. Pat. Application Serial No. 914,296 of Prabhu et al., entitled "THICK-FILM COPPER VIAFILL INKS", filed Oct. 2, 1986.
The via-fill ink is printed into the spaces in the dielectric ink, dried in air at 125.degree. for 15 minutes and fired in nitrogen at 900.degree. for 10 minutes. The thickness of the dielectric/copper via-fill is 15 micrometers. The dielectric/copper via-fill depositions are repeated three times to form a final dielectric layer thickness of 45 micrometers. A second layer of the copper conductor ink is deposited and fired over the dielectric so that a portion is in contact with the copper via-fill. The procedure is repeated three times to produce a multilayer copper-based device having four buried copper layers.
The structure is biased through electrical contacts made to the copper layers and studied for evidence of shorting or loss of contact in any of the copper layers.
Example 3
Devitrifying glasses of the following composition are prepared and the coefficients of thermal expansion determined using the procedure of Example 1.
Dielectric inks employing devitrifying glass frits are prepared using procedures similar to those described in Example 1.
Dielectric inks are printed onto conventional alumina substrates and dried in air at 125.degree. for 15 minutes. The dried ink layers are then fired in nitrogen at 900.degree. for 1-0 minutes.
Example 4
Devitrifying glasses of the following composition are prepared and the coefficients of thermal expansion determined using the procedure of Example 1:
Inks containing the devitrifying glass frit are prepared using procedures similar to those described in Example 1. The ink contains 77 percent of solids and 23 percent of the organic vehicle. The solids contain 91.5 percent frit, 1.5 percent barium dimagnesium disilicate, and percent alumina. The organic vehicle is 66.5 percent of 6 weight parts ethyl cellulose in 100 weight parts Texanol, 4.1 percent 10 weight parts Thixatrol in 100 weight parts Texanol, 29.4 percent Texanol and 1.0 percent of Duomeen TDO. This ink is printed onto an alumina substrate and fired using the conditions described in Example 1.
Claims
We claim:
1. A devitrifying glass frit comprising, on a weight basis: from about 15 to about 25 percent of zinc oxide, from about 10 to about 25 percent of magnesium oxide, from about 3 to about 12 percent of an oxide selected from the group consisting of barium oxide and strontium oxide, from about 5 to about 20 percent of aluminum oxide, from about 35 to about 50 percent of silicon dioxide, from 0 to about 3 percent of phosphorus pentoxide; from 0 to about 5 percent of zirconium silicate, from 0.01 to about 1 percent lead oxide, and from 0.01 to about 1 percent iron oxide.
2. A devitrifying glass frit according to claim 1 comprising barium oxide, from b 0 to about 1.0 percent of phosphorus pentoxide, and from 0 to about 1 percent of zirconium silicate.
3. A glass frit according to claim 1, comprising from about 17 to about 23.5 percent of zinc oxide; from about 17 to about 23.5 percent of magnesium oxide; from about 5 to about 10 percent of barium oxide; from about 8 to about 11 percent of aluminum oxide; and from about 39 to about 43 percent of silicon dioxide.
4. A devitrifying glass frit according to claim 1 comprising from about 17 to about 23.5 percent of zinc oxide; from about 17 to about 23.5 percent of magnesium oxide; from about 3 to about 10 percent of strontium oxide; from about 7 to about 11 percent of aluminum oxide; from about 38 to about 43 percent of silicon dioxide; from 0 to about 2 percent of phosphorus pentoxide; and from 0 to about 2 percent of zirconium silicate.
5. A devitrifying glass composition according to claim 1 comprising about 22.3 weight percent zinc oxide, about 19.7 weight percent magnesium oxide, about 6 weight percent barium oxide, about 40.5 weight percent silica, about 9.6 weight percent alumina, about 1 weight percent phosphorous pentoxide, about 0.4 weight percent lead oxide and about 0.6 weight percent iron oxide.
6. A dielectric composition for multilayer integrated circuit fabrication comprising: a) from about 50 to about 75 percent by weight of a devitrifying glass frit comprising, on a weight basis: from about 15 to about 25 percent zinc oxide; from about 10 to about 25 percent magnesium oxide, from about 3 to about 12 percent of an oxide selected from the group consisting of barium oxide and strontium oxide, from about 5 to about 20 percent aluminum oxide, from about 35 to about 50 percent silicon dioxide, from 0 to about 3 percent phosphorus pentoxide, from 0 to about 5 percent zirconium silicate, from about 0.01 to about 1 percent iron oxide, and from about 0.01 to about 1 weight percent lead oxide; b) up to about 30 percent by weight of a suitable ceramic filler; and c) from about 15 to about 30 percent by weight of a suitable organic vehicle.
7. A dielectric ink according to claim 6 comprising barium oxide, from 0 to about 1 percent phosphorus pentoxide, and from 0 to about 1 percent zirconium silicate.
8. A dielectric ink according to claim 6 comprising from about 17 to about 23.5 percent zinc oxide, from about 17 to about 23.5 percent magnesium oxide, from about 5 to about 10 percent barium oxide, from about 8 to about 11 percent aluminum oxide, and from about 39 to about 43 percent silicon dioxide.
9. A dielectric ink in accordance with claim 6 wherein the glass frit comprises, on a weight basis: from about 17 to about 23.5 percent of zinc oxide; from about 17 to about 23.5 percent of magnesium oxide; from about 3 to about 10 percent of strontium oxide; from about 7 to about 11 percent of aluminum oxide; from about 38 to about 43 percent of silicon dioxide; from 0 to about 2 percent of phosphorus pentoxide and from 0 to about 2 percent of zirconium silicate.
10. A dielectric ink in accordance with claim 6 wherein the ink contains from about 5 to about 15 percent by weight of the filler.
11. A dielectric ink in accordance with claim 10 wherein the filler is selected from the group consisting of alumina, barium dimagnesium disilicate, dimagnesium borate, zirconium silicate, dimagnesia silicate, dimagnesia dialumina pentasilicate, magnesium aluminate and mixtures thereof.
12. A dielectric ink in accordance with claim 11 wherein the filler material is a mixture of alumina and barium dimagnesium disilicate.
13. In a multilayer, integrated circuit structure comprising a suitable substrate having thereon at least two patterned layers of a conductor, said layers being separated by a dielectric layer having vias therein, the vias being filled with a conductor to contact said conductor layers, the improvement wherein said dielectric layer comprises: a) from about 65 to 100 percent by weight of a devitrifying glass comprising, on a weight basis: from about 15 to about 25 percent zinc oxide, from about 10 to about 25 percent magnesium oxide, from about 3 to about 12 percent of an oxide selected from the group consisting of barium oxide and strontium oxide, from about 5 to about 20 percent aluminum oxide, from about 35 to about 50 percent silicon dioxide, from 0 to about 3 percent phosphorus pentoxide, from 0 to about 5 percent of zirconium silicate, and from 0.01 to about 1 percent lead oxide, and from 0.01 to about b 1 percent iron oxide; and b) up to about 35 percent by weight of a suitable ceramic filler.
14. A circuit structure in accordance with claim 13, wherein the devitrifying glass consists essentially of, on a weight basis: from about 17 to about 23.5 percent zinc oxide, from about 17 to about 23.5 percent magnesium oxide, from about 5 to about 10 percent barium oxide, from about 8 to about 11 percent aluminum oxide, and from about 398 to about 43 percent silicon dioxide.
15. A circuit structure in accordance with claim 13 wherein the devitrifying glass comprises, on a weight basis: from about 17 to about 23.5 percent zinc oxide, from about 17 to about 23.5 percent magnesium oxide, from about 3 to about 10 percent strontium oxide, from about 7 to about 11 percent aluminum oxide, from about 38 to about 43 percent silicon dioxide, from 0 to about 2 percent zirconium silicate.
16. A circuit structure in accordance with claim 13 wherein the dielectric layer contains from about 5 to about 26 percent by weight of the filler.
17. A circuit structure in accordance with claim 13 wherein said conductor is copper.