Matrix Interconnection System With Different Width Conductors

The present invention relates to the field of integrated circuit layout schemes. More specifically, the present invention relates to interconnection schemes for integrated circuitry.

It is a well known fact in electronics that the speed with which a signal may propagate along a conductor is dependent upon the capacitance of the conductor and the connected to element along with the resistance of the conductor. In large array-type integrated circuits, such as dynamic random access memories (DRAMS), one line, such as the pull up line feeding the sense amplifiers of the DRAM, may be connected to a large number of elements, such as the sense amplifiers. The resistance of a lead is directly proportional to the length of a lead and inversely proportional to the cross sectional area of the lead. In large arrays some leads must be necessarily long. If high speed or appreciable current is required to be carried on these leads a wide cross section (assuming a relatively fixed conductor thickness because of process limitations) must be fabricated, thus occupying valuable space on the integrated circuit.

For example, in a 1 megabit DRAM there are 2,048 sense amplifiers laid out in two rows. A common pull up signal requires a metal lead running to all the rows of sense amplifiers approximately 37.mu. wide lead running the length of each band of sense amplifiers. In the art of integrated circuit design the space occupied by these leads is enormous and the layout of these leads provides substantial interference with other leads which may be more efficiently laid out.

The described embodiment of the present invention utilizes the regular nature of a large number of arrays by providing a grid scheme in the array to provide a low impedance point to point interconnection. In the described embodiment of the present invention, a DRAM includes a number of leads running perpendicular to the sense amplifier layout. For a given signal, each lead is interconnected at a bus lead running parallel to the layout of the sense amplifiers. Thus each lead in the parallel array carries a portion of the current. In addition, in this scheme it can be assured that a substantial number of perpendicular leads will be near any particular sense amplifier. Because of the close proximity of the perpendicular conductors the parallel bus lines to the sense amplifiers need not be as wide as feeder lines in the prior art. Because the perpendicular grid leads and the parallel bus leads may be much smaller than the leads in the prior art, they may be more compactly arranged in the array.

FIG. 1 is a block diagram showing the approximate layout of a two array dynamic random access memory; and

FIG. 2 is a detailed layout showing a portion of the memory of FIG. 1 including the interconnect scheme which is one embodiment of the present invention.

The described embodiments of the present invention are utilized conjunction with a dynamic random access memory. The present invention is not limited to use with a dynamic random access memory, but may advantageously be used in conjunction with other devices having regular or partially irregular arrays such as programmable array logic circuits, programmable logic array circuits or static random access memories. The example of a dynamic random access memory is provided for exemplary purposes only. In the description of the preferred embodiment, FIG. 1 is a block diagram laying out a dynamic random access memory including one embodiment of the present invention. FIG. 2 is a more detailed diagram showing specific aspects of the described embodiment in the array of FIG. 1.

Array 10 of FIG. 1 is a dyanamic random access memory array where memory cell arrays 12 and 14 are selected by address signals provided on address bus 16 which are decoded by decoders 18 and 20. The selected memory cells provide a plurality of data bits on bus lines 22, 24, 26 and 28 to sense amplifier rows 30, 32, 34 and 36, respectively. The data bits provided to the sense amplifiers are partially selected by the Y decode signals provided on bus 38 from Y decode logic generator 40. The data provided from the sense amplifiers in sense amplifer rows 30, 32, 34 and 36 are provided on bus 42 to further decoding circuitry.

The sense amplifiers in sense amplifier rows 30, 32, 34 and 36 are of the type providing phased clocking for high speed accurate operation. An example of this type of amplifier may be provided in McAlexander III et al, U.S. Pat. No. 4,748,349, issued May 31, 1988 and assigned to the assignee of the present application and White, Jr. et al, U.S. Pat. No. 4,081,701, issued Mar. 28, 1978 and assigned to the assignee of the present application.

FIG. 2 is a schematic diagram showing memory arrays 12 and 14 and sense amplifier rows 30 and 36 with rows 32 and 34 combined in the center of the diagram. These sense amplifiers comprise the units driven by the interconnect system of this embodiment. The Y decode signals provided on bus 38 are shown as leads running perpendicular to the layout of the sense amplifier rows. Interleaved within these rows are signals providing positive supply voltage (VDD), on leads (conductor) 44, negative supply voltage (VSS) on leads (condutor) 46, a first phased clocking signal .phi..sub.1 on leads (conductor) 48 and a second phased clocking signal .phi..sub.2 on leads (conductor) 50. In a memory array such as memory array 10 (FIG. 1), ample room is provided between the Y decode leads 38 (eight shown in FIG. 2) to provide for the multiple leads 44, 46, 48 and 50. In the diagram of FIG. 2, only two leads are shown connected to each of multiple leads 44, 46, 48 and 50. In an actual embodiment many more leads would be provided across the entire width of the memory array. Thus rather than a 37.mu. wide lead running across the length of the bank of sense amps, the present invention provides plural leads having a width (w) of 3 microns thus comprising substantially the same cross sectional area and thus the low resistance of a 37.mu. wide bus type lead. Bus leads 52-1 through 52-4, 54-1 through 54-4 and 56-1 through 56-4 run the length of the sense amplifier rows. Each of the parallel leads 44 which is connected to terminal VDD is connected to bus lead 52-1, 54-1 and 56-1. Similarly, each of the parallel leads 46 which is connected to the terminal VSS is connected to bus 52-2, 54-2 and 56-2. Also, each of the parallel leads 48 which is connected to .phi..sub.1 is connected to bus leads 52-3, 54-3 and 56-3. And finally, each of the parallel leads 50 which is connected to .phi..sub.2 is connected to bus leads 52-4, 54-4 and 56-4. Because of the dispersed nature of the parallel leads, a substantial number of leads will be in close proximity to any selected sense amplifier, thus providing a short signal path to that sense amplifier. Therefore, bus leads 52, 54 and 56 comprise leads approximately 4 .mu. wide shown by the symbol (>w) as opposed to the 37.mu. wide leads provided in the prior art.

Although specific embodiments of the present invention are herein described, they are not to be construed as limiting the scope of the present invention. The present invention is limited only by the claims appended hereto.