Method of Making a Semiconductor Laser Using Superlattice Disordering

FIGS. 1(a)-1(e) are schematic diagrams showing a method of producing a semiconductor laser as an embodiment of the present invention; and

FIG. 2 is a cross-section exemplifying a prior art buried heterojunction semiconductor laser using a disordered superlattice.

Turning now to the drawings, FIGS. 1(a)-(e) illustrate the major steps in producing a semiconductor laser according to the present invention. In the illustrated embodiment, a p-type AlGaAs lower cladding layer 202, a multiquantum-well active layer 203, an n-type AlGaAs upper cladding layer 204, and an n-type GaAs contact layer 205 are successively deposited on a semi-insulative GaAs substrate 201 by chemical vapor deposition epitaxy or by molecular beam epitaxy. The term upper cladding layer is used herein in a broad sense and should be understood to include both the AlGaAs layer 204 and, when present, the associated GaAs layer 205.

To disorder the multiquantum-well, a ZnO doped film 101 is used as a diffusion source. The diffusion film 101 and a SiO.sub.2 film 102, the latter being used to cap ZnO film 101, are grown on the main surface of n-type GaAs contact layer 205 by chemical vapor deposition epitaxy or by a sputtering method. The preferred thickness of each film 101 and 102 is about 500 .ANG.. Although the SiO.sub.2 film 102 is not absolutely required, by capping the diffusion source 101 with SiO.sub.2 film 102 diffusion of Zn into the ambient is prevented. As a result, diffused regions of higher zinc concentration are obtained.

In the next step, a window 103 in a shape of a stripe approximately 10 .mu.m wide, is removed from the SiO.sub.2 and ZnO films, 102 and 101, respectively, using a process such as photolithography and chemical etching. This window 103, which is bordered on its right side by regions 111, 112 of the ZnO diffusion film and SiO.sub.2 capping film, respectively, may be coated over by a dielectric film such as Si.sub.3 N.sub.4 (not shown) in order to protect the surface of n-type GaAs contact layer 205 as required.

When this wafer, having a window is annealed at 700.degree. C. for several hours in a nitrogen ambient or in an ambient consisting of a mixture of nitrogen and hydrogen, a so-called solid phase diffusion of Zn from ZnO film 101, 111 occurs thereby producing p diffused regions 208. The portions of the upper cladding layer 204 including contact layer 205 within the diffused regions 208 are inverted in conductivity, in the illustrated embodiment from n to p type. In the active layer 203, which consists of a multiquantum-well, a smearing of the boundaries of the thin well and barrier GaAs and AlGaAs layers occurs during the solid phase diffusion process, changing the active layer into an AlGaAs layer of averaged composition. This process is called the disordering of the multiquantum-well.

In the region beneath window 103 which is not diffused with p impurities, the active layer remains a nondisordered multiquantum-well creating a central stripe 209 (FIG. 1(c)) which functions as an active region. It is seen that portion 114 of the upper cladding layer and a corresponding portion 115 of the contact layer, which portions overlie the central stripe 209, retain their original conductivity type. Even when window 103 is 10 .mu.m wide, and because diffusion occurs in all directions including into the stripe, diffused regions 208 are expanded in a direction perpendicular to the direction of growth of the layers on substrate 201. As a result, by controlling the characteristics of the diffusion process such as diffusion source impurity concentration and annealing conditions, it becomes possible to easily reduce the width of active layer 209 to a dimension under 2 .mu.m which is recommended for fundamental mode oscillation.

After this solid phase diffusion, portion 111 of ZnO film 101 which was used as a diffusion source and portion 112 of SiO.sub.2 film 102 are removed so as to widen window 103. In the illustrated embodiment, film layers 111 and 112 are removed, while the portions of film layers 101, 102 on the left-hand side of window 103 are left in place. It is important to note that the edge 113 of left in place portions of films 101, 102, by virtue of the fact that it had defined (in the diffusion process) the extent of the diffused region 208, has a known positional relationship to the central stripe 209.

In accordance with the invention, means are provided for re-inverting the conductivity type of a portion only of the surface of the inverted upper cladding layer to its original conductivity type. The re-inverted region is positioned such that it is in electrical contact with the portion 114, 115 of the upper cladding layer located above the central stripe 209. Advantageously, a mask 116 comprising left in place portions of films 101, 102 formed as described above, is used in re-inverting a portion of the surface of the upper cladding layer in a fashion which is self-aligning with the central stripe 209.

More particularly, in the illustrated embodiment, after removal of diffusion source portions 111, 112 as described above, Si ions are implanted into the upper cladding layer 204 and contact layer 205 using left in place portions of films 101, 102 as a mask 116. As a result, this ion implantation re-inverts the conductivity of a portion of the surface of diffused regions 208 to n-type (in the illustrated embodiment, region 105 extending rightward from edge 113), while leaving the upper cladding layer region on the left-hand side of edge 113 of p-type conductivity. It produces, self-aligningly with active region 209, an n-type region 105, in electrical contact with the upper cladding layer portion 114, 115 located above nondisordered active region 209 as shown in FIG. 1(d).

Finally, after removing mask 116 in the area where the diffused contact layer 205 meets the re-inverted region 105, the contact layer is etched to form a groove in order to separate p- and n-type contact layer regions. To complete the fabrication process, p and n side electrodes 206 and 207 are then produced on the corresponding p-type and n-type regions of the GaAs contact layer.

Because n-type region 105 overlies not only the central stripe 209 but also at least a portion of one of the diffused regions 208, and recalling that it is in electrical contact with the upper cladding layer portion 114, 115 which overlies the central stripe, it is seen that the n side electrode is no longer confined to the width of the central stripe. As can be appreciated upon reference to FIG. 1(e), the n-side can be of a size larger than the central stripe 209, and can thus be made of a size which facilitates production, without running the risk of shorting the active region through the p-type disordered region as encountered in the FIG. 2 prior art semiconductor laser.

Turning now to the operation of the semiconductor laser of the present invention, when a voltage is applied between the p side and n side electrodes with the p side electrode positive with respect to the n side, carriers are injected into the active region to cause laser oscillation under the same principle as that of prior art semiconductor lasers. The conductive path includes the p-side electrode 206, the p-type diffused regions of the contact layer 205, upper cladding layer 204 and p-type lower cladding layer 202 to the periphery of the active region 209. The p-n junction is formed between those p-type layers and n-type region 114 of the upper cladding layer. The conductive path is completed through the enlarged re-inverted region 105 of the upper cladding and contact layers 204, 205 to the enlarged n-side electrode 207. As in the FIG. 2 embodiment, the diffusion voltage of the p-n junction at the periphery of the active region 209 is lower than that of the p-n junction between the opposite conductivity type regions in the upper cladding layer. As a result, current will flow through the former and carriers will be injected into the active region. In the described embodiment of the invention, because the width of the active region can be made very narrow without being restricted by minimum width requirements for the n side electrode, fundamental transverse mode oscillation easily occurs and the threshold current is reduced to about 1 mA. In addition, the fact that the p side and n side electrodes are located on the same main surface and at about the same level allows integration of this semiconductor laser with other electronic circuitry.

In the above-illustrated embodiment, the active layer is a multiquantum-well although it may instead consist of a single quantum well or a superlattice. Furthermore, the proportions in Al composition of the p-type and n-type AlGaAs cladding layers, between which the active layer is sandwiched, do not necessarily have to be constant within each cladding layer but may vary gradually, along the direction of growth of the layers, as in a graded type laser.

In the illustrated embodiment, a GaAs series laser is described, but the present invention is applicable as well to an InP series laser or to a series laser of a different material.

In the illustrated embodiment, Zn diffusion from a zinc oxide doped film is used as an example of solid phase diffusion. However, solid phase diffusion from a silicon film of n-type impurities can be used in a semiconductor laser in which the conductivity type of each layer is the reverse of that shown in the illustrated embodiment.

The AlGaAs lower cladding layer may be of n-type conductivity instead of p-type as in the illustrated embodiment. This lower cladding layer may also be of a semi-insulative type. In this case, the injection of carriers occurs only from the upper cladding layer as carriers cannot be injected from the semiinsulative layer. However, effects almost similar to those obtained when the lower cladding layer is not of the semi-insulative type should result.

In the above-illustrated embodiment, a GaAs contact layer 205 with separation groove 106 is provided on the upper cladding layer. However, this GaAs contact layer 205, although preferred, is not mandatory. When no contact layer is provided, the value of the contact resistance between each electrode and its respective conductivity region is higher but no separation groove is necessary.

The foregoing description of the operation of a semiconductor laser according to the present invention shows that, in a buried heterojunction laser utilizing the disordering of a multiquantum-well, a portion of the surface of the upper cladding layer located above the disordered active layer regions is electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe width can be reduced independently of that of the corresponding electrode, which can, therefore, be of a large size. Additionally, the oscillation of the semiconductor laser is rendered more stable and the required threshold current is reduced. Moreover, because both p and n side electrodes are located on the upper surface of the chip, this configuration is appropriate for integration with other electronic circuitry.

According to a method of producing a semiconductor laser of the present invention, a portion of an active layer is disordered by conducting, from above an upper cladding layer, solid phase diffusion of first type conductivity impurities. A portion of the surface of the upper cladding layer, located above the disordered active layer regions and which was inverted to first type conductivity during the above-described solid phase diffusion, is re-inverted to second type conductivity and is electrically connected with the upper cladding layer located above the nondisordered central stripe. This re-inversion process is restricted to certain areas of the upper cladding layer by using as a mask the one part of the diffusion source which had defined one of the diffused regions and which was left in place after the diffusion step so as to form a region of inverted conductivity type self-aligningly with the nondisordered active region.

Accordingly, this production method provides a semiconductor laser in which both p and n side electrodes are located on the upper surface of the chip and where the width of the active region is reduced without being any longer limited by minimum size considerations of the connecting electrode. The semiconductor laser obtained through this process can further be produced easily self-aligningly and oscillates in a stable manner with low threshold current. It is also in a configuration appropriate for integration with other electronic circuitry such as FET devices which could be used to modulate laser current and, therefore, the light being emitted by the laser. Moreover, the electrode which is connected to the conductivity area located above the nondisordered active layer, can be of a significant size as it no longer has to match the width of the semiconductor laser active region.