US 4,889,767 AGrant

Magnetic Recording Medium

Issue Date:1989-12-26

•39 Claims

•1 Drawing Sheets

Abstract

In a magnetic recording medium wherein a metal thin film magnetic layer and a topcoat layer of an organic fluorine compound are formed on a nonmagnetic substrate, the surface of the magnetic layer is plasma treated or plasma oxidized, enhancing the bond between the adjoining layers. A protective film of carbon may be disposed between the magnetic layer and the topcoat, with the surface of the protective carbon film plasma treated. Instead, a protective film of plasma-polymerized organometallic compound may be used.

Metadata

Assignee

TDK Corporation

Inventors

Kenji Yokoyama
Masatoshi Nakayama
Toru Shimozawa
Kunihiro Ueda
Fumio Maruta

Application Information

Application Number:US 0414891

Filing Date:1987-04-23

Priority Date:1986-04-23

Art Unit:154

Classifications

IPC:

G11B 564

Field of Search:

42742841;39;132695;694;900;336

Patent Drawings (1 sheets)

Description

CROSS REFERENCE TO RELATED APPLICATIONS

Reference is made to copending application Ser. No. 943,329 filed Dec. 19, 1986, now abandoned, Maruta et al, for Magnetic Recording Medium, Ser. No. 868,511 filed May 30, 1986, now U.S. Pat. No. 4,824,724, Ueda et al, for Magnetic Recording Medium, and Ser. No. 33,617 filed Apr. 3, 1987, now U.S. Pat. No. 4,816,334, Yokoyama et al, for Magnetic Recording Medium where all the applications are assigned to the same assignee as the present invention and incorporated herein by reference.

BACKGROUND OF THE INVENTION

This invention relates to a magnetic recording medium, and more particularly, to an improvement in the durability of a magnetic recording medium of the hard type such as magnetic disks and drums.

Magnetic recording media used in cooperation with magnetic disk apparatus are generally known as magnetic disks or disk media and have the basic structure comprising a doughnut shaped substrate having a magnetic layer usually on each of its surfaces.

The materials of which the substrates of such magnetic recording media are made include two types, hard materials such as aluminum alloy and plastic materials such as Mylar as also used in magnetic tape media. In general, the former is called a magnetic disk of the hard type and the latter a flexible disk.

The magnetic recording media for use with magnetic disk or drum apparatus, particularly hard type magnetic disks encounter some problems of durability and abrasion resistance against mechanical contact with a magnetic head. To this end, magnetic recording media are usually provided with a protective coat. Known as the protective coat of such media are protective films of inorganic material and lubricating films of solid lubricant.

The inorganic protective films used in the prior art are formed from, for example, Rh and Cr as disclosed in Japanese Patent Publication No. 52-18001, Ni-P as disclosed in Japanese Patent Publication No. 54-33726, Re, Os, Ru, Ag, Au, Cu, Pt and Pd as disclosed in Japanese Patent Publication No. 57-6177, and Ni-Cr as disclosed in Japanese Patent Publication No. 57-17292. The commonly used solid lubricants are inorganic and organic lubricants including silicon compounds such as SiO.sub.2, SiO, and Si.sub.3 N.sub.4 as disclosed in Japanese Patent Publication No. 54-33726, polysilicic acid and silane coupling agents such as tetrahydroxysilane and polyaminosilane as disclosed in Japanese Patent Publication No. 59-39809, and carbon.

The conventional protective films formed on the magnetic layer from these materials are somewhat unsuccessful in enhancing the durability, abrasion resistance, weatherability, and corrosion resistance of the associated media and suffer from the phenomenon called grip that the head adheres to the medium surface.

In our copending application Ser. No. 943,329 filed Dec. 19, 1986, we proposed a combination of a topcoat layer and a protective carbon film on a magnetic recording medium, the topcoat layer comprised of an organic fluorine compound of the same type as used in the present invention and characterized by improvements in durability, abrasion resistance, weatherability, corrosion resistance and grip resistance. In our copending application Ser. No. 07/033,617 (filed Apr. 3, 1987) directed to a similar magnetic recording medium, the topcoat layer is formed from an organic fluorine compound by gas phase deposition.

Also, in our copending application Ser. No. 868,511 filed May 30, 1986, we proposed a topcoat layer for a magnetic tape having a metal magnetic thin film layer, the topcoat layer being formed from a fluorocarbon resin by sputtering or ion plating.

In general, the disk medium has the structure wherein various necessary layers including primary, magnetic, and intermediate layers are disposed one on top of the other on a substrate. The durability of medium having such a layered structure depends on not only the nature of a protective layer disposed on the top surface of the medium, but also the adhesion or bond strength between the respective layers. A defective bond between any two layers will lead to a loss of the overall medium durability. There is the need for further improving the overall durability of magnetic recording medium.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a novel and improved magnetic recording medium free of head grip and having excellent durability, abrasion resistance, weatherability, and corrosion resistance as well as increased reliability in practical applications.

The present invention is directed to a magnetic recording medium comprising a nonmagnetic substrate having opposed major surfaces, a metal thin film magnetic layer on one major surface of the substrate, and a topcoat layer comprising an organic fluorine compound on the magnetic layer.

According to a first aspect of the present invention, there is provided a magnetic recording medium comprising

a nonmagnetic substrate having opposed major surfaces,

a metal thin film magnetic layer on one major surface of the substrate,

a protective film of carbon on the magnetic layer, and

a topcoat layer comprising an organic fluorine compound on the protective film,

wherein the surface of any underlying layer to which the protective carbon film is contiguous is plasma treated. In most cases, the surface of the magnetic layer is plasma treated. Preferably, the surface of the protective carbon film is also plasma treated. The plasma treated interface provides an increased bond between the adjoining layers.

According to a second aspect of the present invention, there is provided a magnetic recording medium comprising

a nonmagnetic substrate having opposed major surfaces,

a metal thin film magnetic layer on one major surface of the substrate,

a plasma-polymerized film of an organometallic compound on the magnetic layer, and

a topcoat layer comprising an organic fluorine compound on the plasma-polymerized film.

According to a third aspect of the present invention, there is provided a magnetic recording medium comprising

a nonmagnetic substrate having opposed major surfaces,

a metal thin film magnetic layer disposed on one major surface of the substrate and having opposed surfaces adjacent to and remote from the substrate, the magnetic layer surface remote from the substrate being plasma oxidized, and

a topcoat layer comprising an organic fluorine compound on the magnetic layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the present invention will be more fully understood by reading the following detailed description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view of a magnetic recording medium according to one preferred embodiment of the present invention.

FIG. 2 is a schematic view of a plasma treating apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIG. 1, there is illustrated in cross section a magnetic recording medium generally indicated at 1 according to one preferred embodiment of the first aspect of the present invention. The magnetic recording medium 1 includes a nonmagnetic substrate 2 having opposed major surfaces for carrying a necessary number of layers thereon. In general on the substrate 2, an undercoat layer 3, an intermediate layer 4 of a nonmagnetic metal, a metal thin film magnetic layer 5, a protective layer 6 of a nonmagnetic metal, a protective carbon film 7, and a topcoat layer 8 are disposed one on top of the other in this order.

One layer has a pair of opposed surfaces, the upper surface remote from the substrate and the lower surface adjacent to the substrate. In most cases, the term surface used herein in conjunction with a layer or film represents the upper surface of the layer or film located remote from the substrate.

According to the feature of the present invention, the surface of any underlying layer to which the protective carbon film 7 is contiguous and optionally, the surface of the protective carbon film 7 are plasma treated. The surface of the underlying layer to which the protective carbon film 7 is contiguous corresponds to the surface of the protective nonmagnetic metal layer 6 in the illustrated embodiment, but to the surface of the metal thin film magnetic layer 5 in another embodiment where the protective film 7 is omitted.

The provision of the protective nonmagnetic metal layer 6 is often desirable in view of protection of the magnetic layer. Thus, in most cases, the protective nonmagnetic metal layer 6 on its surface is treated with a plasma.

The plasma treatment is effected by feeding an inorganic gas as the treating gas into a reaction chamber, ionizing the gas, and contacting the gas discharge plasma with a subject to be treated, thereby plasma treating the subject surface.

The principle of plasma treatment will be briefly described. When an electric field is applied to a gas kept at a reduced pressure, free electrons which are present in a minor proportion in the gas and have a remarkably greater inter-molecular distance than under atmospheric pressure are accelerated under the electric field to gain a kinetic energy (electron temperature) of 5 to 10 eV. These accelerated electrons collide against atoms and molecules to fracture their atomic and molecular orbitals to thereby dissociate them into normally unstable chemical species such as electrons, ions, neutral radicals, etc. The dissociated electrons are again accelerated under the electric field to dissociate further atoms and molecules. This chain reaction causes the gas to be instantaneously converted into highly ionized state. This is generally called a plasma. Since gaseous molecules have a less chance of collision with electrons and absorb little energy, they are kept at a temperature approximate to room temperature. Such a system in which the kinetic energy (electron temperature) of electrons and the thermal motion (gas temperature) of molecules are not correlated is designated a low temperature plasma. In this system, chemical species set up the state capable of additive chemical reaction such as polymerization while being kept relatively unchanged from the original. A subject is plasma treated under these conditions according to the present invention. The use of a low temperature plasma avoids any thermal influence on substrates.

FIG. 2 illustrates a typical apparatus in which a subject on its surface is treated with a plasma, the subject being an intermediate comprising a substrate having a metal thin film magnetic layer as deposited or a substrate further having a protective nonmagnetic metal layer as deposited on the magnetic layer. This plasma apparatus uses a variable frequency power source. The apparatus comprises a reactor vessel R into which a treating gas or gases are introduced from a source 511 and/or 512 through a mass flow controller 521 and/or 522. When desired, different gases from the sources 511 and 512 may be mixed in a mixer 53 to introduce a gas mixture into the reactor vessel. The treating gases each may be fed at a flow rate of 1 to 250 ml per minute.

Disposed in the reactor vessel R are a pair of opposed electrodes 551 and 552. One electrode 552 is a rotary support electrode on which a subject 111 to be treated rests. The subject 111 is placed between the electrodes 551 and 552. The electrode 551 is connected to a variable frequency power source 54 and the rotary support electrode 552 grounded at 8. Although the coated substrate to be treated is supported on the electrode in the reactor vessel in the illustrated embodiment, continuous operation can be made by continuously moving a length of substrate along the electrode, if desired.

The reactor vessel R is further connected to a vacuum system for evacuating the vessel, including a liquefied nitrogen trap 57, an oil rotary vacuum pump 56, an oil diffusion pump 58, and a vacuum controller 59. The vacuum system has the capacity of evacuating and keeping the reactor vessel R at a vacuum of 0.01 to 10 Torr.

In operation, the reactor vessel R is first evacuated by means of the vacuum pump to a vacuum of 10.sup.-3 Torr or lower before a treating gas or gases are fed into the vessel at a predetermined flow rate. Then the interior of the reactor vessel is maintained at a vacuum of 0.01 to 10 Torr. When the flow rate of the treating gas mixture and the rate of transfer of the substrate in the case of continuous operation become constant, the variable frequency power 54 is turned on to generate a plasma with which the subject 111 is treated.

According to the present invention, the treating atmosphere used in the plasma treatment is not particularly limited. The atmosphere may be comprised of an inorganic gas selected from air, H.sub.2, Ar, He, O.sub.2, O.sub.3, H.sub.2 O, N.sub.2, NH.sub.3, and NO.sub.x including NO, N.sub.2 O, and NO.sub.2, and mixtures thereof.

The frequency of the power source is not critical to the plasma treatment according to the present invention. The source may be of DC, AC, and microwave. It is to be noted that other parameters including supply current and treating time may be as usual or properly selected without undue experimentation.

According to the present invention, the topcoat layer 8 is formed from an organic fluorine compounds as the uppermost layer of the medium. The organic fluorine compound is preferably selected from the group consisting of (A) carboxyperfluoropolyethers and salts and esters thereof, (B) perfluoropolyethers, (C) tetrafluoroethylene polymers, and (D) other fluorocarbon resins.

(A) Carboxyperfluoropolyethers, salts and esters

In a first example, the topcoat layer 8 contains a carboxyperfluoropolyether or a salt or ester thereof.

The perfluoropolyethers are perfluoro derivatives of polyalkylethers. The carboxyperfluoropolyethers are those perfluoropolyethers having a carboxylic acid radical or its salt substituted at their end. The number of carboxylic acid radicals is not particularly limited, but is preferably 1 or 2.

Typical carboxyperfluoropolyethers, salts, and esters used herein are compounds having the general formula (I):

wherein

Rf represents a fluorine atom, a perfluoroalkyl radical, -COOZ, or -ORf"COOZ;

Rf' and Rf" are independently selected from divalent perfluoroalkylene radicals and may be the same or different;

n is a positive integer, with the proviso that when n is 2 or more, a corresponding plurality of Rf' may be the same or different;

R1 represents hydrogen, a monovalent cation, or a substituted or unsubstituted alkyl radical; and

Z has the same meaning as R1, with the proviso that Z and R1 in formula (I) may be the same or different.

Examples of the perfluoroalkyl radicals represented by Rf include --CF.sub.3, --C.sub.2 F.sub.5, --C.sub.3 F.sub.7, etc. Examples of perfluoroalkylene radicals represented by Rf' and Rf" include ##STR1## etc., with --CF.sub.2 --, --CF.sub.2 CF.sub.2 --, and --CF(CF.sub.3)--CF.sub.2 -- being preferred.

Preferred examples of Rf are --F, --COOCH.sub.3, --COOH, --COOC.sub.2 H.sub.5, and --COOC.sub.3 H.sub.7.

Examples of the substituted or unsubstituted alkyl represented by R1 include --CH.sub.3, --C.sub.2 H.sub.5, --C.sub.3 H.sub.7, i--C.sub.3 H.sub.7, --C.sub.4 H.sub.9, and --C.sub.5 H.sub.11. R1 is preferably selected from unsubstituted alkyl radicals having 1 to 5 carbon atoms, more preferably --CH.sub.3 and --C.sub.2 H.sub.5.

Examples of the cations represented by R1 include alkali metal cations such as Na.sup.+, K.sup.+, and Li.sup.+, and NH.sub.4.sup.+.

The letter n generally ranges from about 10 to about 100, preferably from 30 to 70.

When more than one Rf' is present, they may be the same or different.

The esters having formula (I) may be either carboxylic acid monoester or diesters.

Preferred among the compounds of formula (I) are those compounds having the general formulae: ##STR2## wherein Z and R1 are as defined in formula (I), the sum of m and p is the same as n defined in formula (I). Preferably Z and R1 are H and --CH.sub.3, and each of m and p generally ranges from 5 to 50, preferably from 5 to 20.

Another preferred class includes those compounds having the general formulae: ##STR3## wherein R1 and n are as defined in formula (I). Preferably R1 is H, --CH.sub.3 or --C.sub.2 H.sub.5, and n generally ranges from 10 to 100, preferably from 30 to 70.

These compounds have a molecular weight of about 1,000 to 10,000.

These compounds may be readily synthesized by a conventional known method and are commercially available.

Typical examples of commercial products of these compounds are KRYTOX 157FS manufactured by E. I. DuPont which corresponds to the compounds of formula (I-3) wherein R1 is H and n is 11 to 49, FOMBLIN Z DIAC manufactured by Montefluos which corresponds to the compounds of formula (I-2), and FOMBLIN Z DEAL manufactured by Montefluos which corresponds to the compounds of formula (I-1) wherein Z and R1 are methyl, and m and p are 11 to 49.

(B) Perfluoropoyeth

In a second example, the topcoat layer 8 contains a perfluoropolyether.

Typical perfluoropolyethers used herein are compounds having the general formula (II):

wherein R2f represents a fluorine atom or a perfluoroalkyl radical; R2f' is a perfluoroalkylene radical; R2f" is a perfluoroalkyl radical; and n is a positive integer. When R2f is a perfluoroalkyl radical, R2f and R2f" may be the same or different. When n is 2 or more, a corresponding plurality of R2f' may be the same or different.

Examples of the perfluoroalkyl radicals represented by R2f include --CF.sub.3, --C.sub.2 F.sub.5, etc. Preferably, R2f is --F or --CF.sub.3. Examples of perfluoroalkylene radicals represented by R2f' include --CF.sub.2 --, --CF.sub.2 CF.sub.2 --, ##STR4## etc., Examples of the perfluoroalkyl radicals represented by R2f" include --CF.sub.3, --C.sub.2 F.sub.5, etc.

The letter n generally ranges from about 10 to about 100, preferably from 10 to 50.

Preferred among the compounds of formula (II) are those compounds having the general formulae (II-1) and (II-2): ##STR5## wherein the sum of m and p is about 10 to 100. Each of m and p generally ranges from 5 to 50, preferably from 5 to 30.

Another preferred class includes those compounds having the general formula (II-3): ##STR6## wherein n is as defined in formula (II). The letter n generally ranges from 10 to 100, preferably from 30 to 70.

These compounds have an average molecular weight of about 1,000 to 10,000.

These compounds may be readily synthesized by a conventional known method and are commercially available.

Typical examples of commercial products of these compounds are FOMBLIN Y04, Y06, Y25, Y45, YR; FOMBLIN Y-LVAC0616, Y-L-VAC 14/6, Y-L-VAC 16/6, Y-L-VAC 25/6; FOMBLIN Y-H-VAC 18/8 Y-H-VAC 25/9, Y-H-VAC 40/11, Y-H-VAC 140/13; and FOMBLIN Z, all manufactured by Montefluos Company; and KRYTOX 143CZ, 143AZ, 143AA, 143AY, 143AB, 143AC, 143AD, KRYTOX 1502, 1504, 1506, 1509, 1514, 1516, 1525, 1618, 1625, 1645, 1680, and 1614, all manufactured by E. I. DuPont. Among them, KRYTOX 143CZ corresponds to the compounds of formula (II-3) wherein n is 11 to 49, and FOMBLIN Y and Z correspond to formulae (II-2) and (II-1), respectively.

(C) Tetrafluoroethylene polymers

In a third embodiment, the topcoat layer 8 contains a tetrafluoroethylene polymer preferably having a molecular weight of 1,000 to 10,000.

The polymers preferably have a softening point of about 200.degree. to 300.degree. C. as measured according to ASTM E-28-58T and a melting point of about 200.degree. to 350.degree. C.

These polymers may be readily synthesized by a conventional well-known method and commercially available.

Typical examples of commercially available products of the tetrafluoroethylene polymers are Vydax A12, 5100, 550, and 525 manufactured by E. I. DuPont and AG-LUB manufactured by Asahi Glass K.K.

(D) Fluorocarbon resins

In a fourth example, the topcoat layer 8 contains a fluorocarbon resin.

Typical fluorocarbon resins used herein include polyvinylidene fluoride (PVdF), polyvinyl fluoride (PVF), tetrafluoroethylene-hexafluoropropylene copolymers (FEP), tetrafluoroethylene-ethlylene copolymers (ETFE), tetrafluoroethylene-perfluoroalkylvinyl ether copolymers (PFA), chlorotrifluoroethylene-ethylene copolymers (ECTFE), etc. Preferred among them are tetrafluoroethylene-hexafluoropropylene copolymers (FEP) and tetrafluoroethylene-hexafluoropropylene copolymers (ETFE). The fluorocarbon resins preferably have an average degree of polymerization of about 700 to 3,000.

The compounds (A) to (D) may be present alone or as a mixture of two or more in the topcoat layer 8.

The total content of these fluorine compounds ranges from 50 to 100% by weight, preferably from 70 to 100% by weight based on the weight of the topcoat layer 8. Less than 50% by weight of the fluorine compound imparts insufficient lubricity to the topcoat.

Any other materials may be present in the topcoat layer 8. Preferred examples of the additional materials are fatty acids, fatty acid esters, epoxy resins, and phenolic resins.

The topcoat layer 8 may be formed by any desired methods including solvent deposition and gas phase deposition.

The solvent deposition includes spin coating, dipping and spray coating, for example. The coating solution used herein is usually prepared by adding 0.01 to 1.0% by weight, preferably 0.05 to 0.1% by weight of one or more of compounds (A) to (D), especially compounds (A) and (B) to fluorine solvent, typically Fron.

Coating conditions may be readily determined by those skilled in the art without undue experimentation. Spin coating favors 500 to 3,000 revolutions per minute and a spinning time of about 5 to 20 seconds. Dipping may be carried out by immersing a sample in a Fron or similar solvent for about 15 to 30 seconds for cleaning, then immersing in the coating solution for about 10 to 30 seconds, and pulling up at a speed of about 5 to 20 mm/second.

The gas phase deposition processes include evaporation, sputtering and ion plating. The solids component of compounds (A) to (D) may be used as a source for gas phase deposition. A mixture of two or more of compounds (A) to (D) may be present in the topcoat layer as previously described.

The gas phase deposition has the features that a thin deposit can be formed to a uniform thickness and no organic solvent is contained in the topcoat deposited. Therefore, the topcoat formed by gas phase deposition has various advantages including a uniform thickness, and less frequent grip by a head and low friction, all promising improved performance in actual operation.

The evaporation, sputtering and ion plating methods will be described in detail as typical gas phase deposition. Any of these methods may be utilized in the present invention although the use of vacuum deposition or sputtering is preferred.

First, the evaporation or vacuum deposition is a method wherein an evaporation source is melted and evaporated by heating in a highly evacuated atmosphere at about 10.sup.-3 Torr or lower by electron beam, resistance heating and the like. The resulting vapor is deposited, for example, on the substrate surface to form a thin film. The vapor particles are imparted with a kinetic energy of about 0.1 to 1 eV upon evaporation.

Next, the sputtering process will be described. The sputtering process may be further classified into plasma sputtering and ion beam sputtering depending on the region where operation is conducted.

In the plasma sputtering process, an abnormal glow discharge is generated in an atmosphere of an inert gas such as argon, a target of source material to be evaporated is sputtered with the resulting Ar ions, and the thus generated vapor of source material is deposited or condensed on the substrate. Included are a DC sputtering technique wherein a DC voltage of several kilovolts is applied and a high frequency sputtering technique wherein a high frequency power of several to several hundred kilowatts is applied. A magnetron type sputtering technique is also useful wherein a multi-pole sputtering equipment such as two, three or four pole sputtering equipment is used, and electromagnetic fields are applied in two perpendicular directions to impart a cycloidal motion to electrons in the plasma, as by a magnetron, to form a high density plasma, thereby reducing the voltage applied and improving the sputtering efficiency. If desired, instead of a pure inert gas atmosphere such as argon, there may be used reactive or chemical sputtering using an atmosphere containing an active gas such as O.sub.2 and N.sub.2 in admixture with argon.

In the ion beam sputtering process, a suitable ionization source like argon (Ar) is ionized. The ionized Ar is driven out as an ion beam in a high vacuum by applying a negative high voltage across driving electrodes. The ion beam is impinged on the surface of a target of source material to be evaporated. The resulting vapor of source material is deposited or condensed on the substrate.

In either sputtering process, the operating pressure is about 10.sup.-2 to 10.sup.-3 Torr.

These sputtering processes impart particles of source material with a kinetic energy of about several eV (electron volts) to about 100 eV which is substantially greater than the kinetic energy of about 0.1 eV to about 1 eV given by the evaporation processes.

Further, the ion plating process is an atomistic film forming process wherein evaporated material ions having a sufficient kinetic energy are bombarded on the surface of a substrate before and during formation of a film thereon. The basic functions involved are sputtering, heating and ion implantation of the substrate by bombarding ions, which affect the adherence, nucleation and growth of a film being deposited. The ion plating process may be further classified into plasma and ion beam processes depending on the region where operation is carried out.

In the plasma ion plating process, a substrate held at a negative potential is cleaned by impinging Ar.sup.+ or similar cations thereon under a DC glow discharge, and an evaporation source is then heated to evaporate the source material which is ionized in the plasma. The resulting source material ions are accelerated under an electric field of increased intensity in a cathodic dark region of the glow discharge surrounding the substrate and then bombarded on the substrate with a high energy, whereby the material deposits on the substrate. Any techniques of plasma ion plating may be employed including DC application, high frequency excitation, and their combination, and their combination with various heating modes of the evaporation source. A plasma electron beam technique using a hollow cathode plasma electron gun may also be employed.

In the ion beam plating process, a source material is converted into ions by any ion producing means including sputtering, electron bombardment, or modified duo-plasmatron equipment. The resulting vapor of source material ions is driven out into a high vacuum region under a controlled accelerating voltage to successively carry out cleaning and deposition on the surface of a substrate. A cluster ion beam technique for evaporation and crystal growth may also be employed wherein a jet of source material is injected from a crucible into a high vacuum through an injection nozzle to form a cluster containing 10.sup.2 to 10.sup.3 loosely combined atoms by utilizing an overcooling phenomenon due to adiabatic expansion.

The kinetic energy imparted to ions by ion plating is in the range of from about several ten eV to about 5000 eV, which is greatly higher than that given by dry coating processes, for example, evaporation process (about 0.1 eV to about 1 eV) and sputtering process (about several eV to about 100 eV). For this reason, the film deposited by ion plating exhibits an outstandingly increased adherence. An increased rate of deposition completes film formation within a short time.

A recently developed arc discharge ion plating technique involving thermionic ionization may also be used. The arc discharge ion plating technique includes heating an evaporation source to form a stream of vapor, impinging electrons emitted from a thermionic emission source against the vapor stream at a position near the evaporation source where the vapor stream is relatively dense, thereby ionizing the vapor stream, and focusing the ionized vapor stream under an electric or magnetic field at a substrate in a direction perpendicular thereto.

In these gas phase deposition processes, conditions such as substrate temperature, substrate-to-hearth or target distance and the like may be as usual.

The topcoat layer may be formed by either coating or gas phase deposition as described above. Generally, the topcoat layer 8 thus formed has a thickness of from 3 to 300 .ANG., preferably from 5 to 150 .ANG.. A thickness of less than 3 .ANG. fails to provide the benefits of the invention, particularly durability. Topcoat layers having a thickness in excess of 300 .ANG. are liable to grip, giving rise to so-called head crush.

The topcoat layer 8 may be formed on the protective carbon film 7. The protective carbon film 7 has a composition consisting essentially of carbon although the composition may contain less than 5% by weight of another element.

The protective carbon film 7 may be formed by any gas phase deposition techniques including sputtering, ion plating, evaporation, and chemical vapor deposition (CVD). Among them sputtering is most preferred because there is produced a very coherent dense film which is effective in durability and weatherability improvements.

The protective carbon film 7 generally has a thickness of 100 to 800 .ANG., preferably 150 to 400 .ANG..

Preferably, the protective carbon film 7 is plasma treated at its surface prior to its covering with the topcoat layer. The plasma treatment chemically activates the surface of the protective carbon film 7 so that the topcoat layer 8 may be more firmly bonded thereto. The bond strength between the topcoat and the underlying protective film is then increased, offering significantly increased durability. The plasma treatment may be carried out as previously described.

The nonmagnetic substrate 2 used in the practice of the present invention is usually rigid one and may be made of such materials as metals, for example, aluminum and aluminum alloys, glass, ceramics, and engineering plastics. Aluminum and aluminum alloys are preferred among them because of their mechanical rigidity, workability, and bond to the undercoat layer.

The nonmagnetic substrate 2 generally has a thickness of about 1.2 to about 1.9 mm and a shape of disk or drum although no particular limit is imposed on the thickness and shape.

Particularly when the nommagnetic substrate 2 is a rigid metal substrate, typically aluminum or aluminum alloy, it is preferred to form the undercoat layer 3 on the substrate. The undercoat layer 3 may have a composition of Ni-P, Ni-Cu-P, Ni-W-P, Ni-B or the like. It may be formed by liquid phase plating, particularly electroless plating. The electroless plating produces a very dense film having increased mechanical rigidity, hardness, and processability.

More specifically, the compositions of the undercoat layer may be represented by the formulae:

wherein x:y=100:0 to 10:90, and

A:B=97:3 to 85:15 in weight ratio. The Ni-B compositions are represented by the formula: Ni.sub.x B.sub.y wherein x:y=97:3 to 90:10.

One exemplary process of the electroless plating involves alkaline degreasing, acidic degreasing, several cycles of zincate treatment, surface adjustment with sodium bicarbonate or similar agents, and subsequent plating in a nickel electroless plating bath at pH 4.0 to 6.0 at a temperature of about 80.degree. to 95.degree. C. for about 1/2 to about 3 hours. For further detail of the chemical plating, reference is made to Japanese Patent Publication Nos. 48-18842 and 50-1438.

The undercoat layer 3 has a thickness of about 3 to 50 .mu.m, preferably about 5 to 20 .mu.m.

In a further preferred embodiment, the undercoat layer 3 is provided with irregularities at the surface. To impart an irregular surface to the undercoat layer 3 on the disk-shaped substrate 2, abrasive is caused to act on the surface of the undercoat layer 3 while rotating the substrate, thereby forming irregular grooves on the undercoat surface in a concentric pattern. Alternatively, the irregularities may be randomly provided on the undercoat layer 3. The provision of irregularities results in improved properties of grip and durability.

When the undercoat layer 3 is absent, the substrate 2 may be directly provided with such irregularities on its surface.

On the substrate 2 optionally having the undercoat layer 3 is formed the metal thin film magnetic layer 5 comprising cobalt or a major proportion of cobalt and at least one of nickel, chromium, and phosphorus.

Illustrative examples of the composition of the metal thin film are Co-Ni, Co-Ni-Cr, Co-Cr, Co-Ni-P, Co-Zn-P, Co-Ni-Mn-Re-P, etc. Most preferred among them are Co-Ni, Co-Ni-Cr, Co-Cr, and Co-Ni-P. These alloys have the preferred compositions of Co-Ni having a proportion of Co:Ni between 1:1 and 9:1 in weight ratio; (Co.sub.x Ni.sub.y).sub.A Cr.sub.B wherein x:y=1:1 to 9:1 and A:B=99.9:0.1 to 75:25; Co-Cr having a proportion of Co:Cr=7:3 to 9:1; and (Co.sub.x Ni.sub.y).sub.A P.sub.B wherein x:y=1:0 to 1:9 and A:B=99.9:0.1 to 85:15. Recording properties decline outside these ranges.

These metal thin film magnetic layer 5 may be formed by any desired gas and liquid phase plating techniques. Sputtering, one of gas phase plating as described above, is preferred because there are produced magnetic layers having favorable magnetic properties.

The material of the target used herein is an alloy or metal mixture corresponding to the composition of the desired metal thin film magnetic layer 5.

When the metal thin film magnetic layer 5 has a composition of CoP or CoNiP, liquid phase plating methods, inter alia, electroless plating may be employed. Magnetic layers obtained by liquid phase plating also exhibit as good magnetic properties as those obtained by sputtering.

The bath composition and operating parameters used in the electroless plating are known and any suitable combination thereof may be used herein, as disclosed in Japanese Patent Publication Nos. 54-9136 and 55-14865.

The metal thin film magnetic layer 5 generally has a thickness of 200 to 5,000 .ANG., and preferably 500 to 1,000 .ANG..

When the metal thin film magnetic layer 5 is formed by sputtering as described above, it is preferred to interpose a nonmagnetic metal intermediate layer 4 containing Cr between the undercoat layer 3 and the magnetic layer 5. The provision of the nonmagnetic metal intermediate layer 4 contributes to improvements in magnetic properties and reliability of recording properties of the medium. Most preferably the nonmagnetic metal intermediate layer 4 consists of Cr although a Cr content of at least 99% by weight is acceptable.

The intermediate layer 4 may be formed by any of various known gas phase film forming methods. Usually, it is preferred to form the intermediate layer by sputtering as in the metal thin film magnetic layer 5 described above. The thickness of the nonmagnetic metal intermediate layer 4 generally ranges from about 500 to about 4,000 .ANG. although it depends on the type of the metal thin film magnetic layer 5.

The magnetic recording medium 1 of the present invention preferably has a protective nonmagnetic metal film 6 of Cr or similar metal interposed between the metal thin film magnetic layer 5 and the protective carbon film 7. The provision of the protective nonmagnetic metal film 6 significantly improves the durability and weatherability of the resulting magnetic recording medium. Most preferably, the protective nonmagnetic metal film 6 consists of Cr although a Cr content of at least 99% by weight is acceptable.

The protective nonmagnetic metal film 6 may be formed by any of known gas phase deposition processes, and usually it is preferable to form the protective film by sputtering. The protective nonmagnetic metal film 6 generally has a thickness of about 30 to 300 .ANG., preferably about 50 to 200 .ANG..

When the protective carbon film 7 is formed directly on the protective nonmagnetic metal film 6, the surface of the protective film 6 is treated with a plasma. When the protective carbon film 7 is formed directly on the metal thin film magnetic layer 5 without the protective nonmagnetic metal film 6, the surface of the magnetic layer is treated with a plasma. The plasma treatment increases the bond strength between the protective carbon film 7 and the adjoining layer, that is, the protective nonmagnetic metal film 6 or the metal thin film magnetic layer 5, resulting in a remarkable increase of the overall durability of the medium.

Referring to FIG. 1 again, the magnetic recording medium 1 according to one preferred embodiment of the second aspect of the present invention includes a nonmagnetic substrate 2 having opposed major surfaces for carrying a necessary number of layers thereon. In general on the substrate 2, an undercoat layer 3, an intermediate layer 4 of a nonmagnetic metal, a metal thin film magnetic layer 5, a protective layer 6 of a plasma-polymerized organometallic compound, a protective film 7 of carbon, and a topcoat layer 8 comprising an organic fluorine compound are disposed one on top of the other in this order.

The protective layer 6 of plasma-polymerized organometallic compound may be formed by creating an electric discharge plasma of a carrier gas such as argon (Ar), helium (He), hydrogen (H.sub.2) and nitrogen (N.sub.2), introducing an organometallic compound in vapor form or vapor of a solution of an organometallic compound in an organic solvent into the discharge plasma, and contacting the activated gaseous mixture with the surface of a subject to be treated. The subject to be treated is a substrate having a magnetic layer already formed thereon in this embodiment. The organometallic compound used herein may be selected from organic compounds and organic complex salts of tin, titanium, aluminum, cobalt, iron, copper, nickel, manganese, zinc, lead, galium, indium, mercury, magnesium, selenium, arsenic, gold, silver, cadmium, germanium, etc. as long as they can be plasma polymerized.

Illustrative of the organometallic compounds are those having formulae (A), (B), (C), (D), (E), and (F). In the formulae, M is a metal, I to VI attached to represent the valence of the metal, R is an organo radical, X is hydrogen or halogen.

(A) M.sup.I R

Examples are phenyl copper and phenyl silver.

(B) M.sup.II R.sub.p X.sub.2-p

In formula (B), p is equal to 1 or 2. Examples of the compounds of formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl iodide magnesium, ethyl bromide magnesium, dimethyl mercury, dimethyl selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium, diethyl mercury, di-n-propyl mercury, allyl ethyl mercury and diphenyl mercury.

(C) M.sup.II R.sub.q X.sub.3-q

In formula (C), q is to 1, 2 or 3. Examples of the compounds of formula (C) include trimethylaluminum, triethylaluminum, triisobutylaluminum, trimethylgallium, trimethylindium, diethyl aluminum chloride, and trimethylgold.

(D) M.sup.IV R.sub.r X.sub.4-r

In formula (D), r is equal to 1, 2, 3 or 4. Examples of the compounds of formula (D) include tetramethyltin, di-n-butyl tin maleate, dibutyl tin diacetate, tetra-n-butyltin, tetraethyllead, tetramethyl germane, tetraethyl germane, diethylcyclogermanahexane, tetraphenyl germane, methyl germane, ethyl germane, n-propyl germane, triethyl germane, diphenyl germane, triphenyl germane, trimethyl bromogermane, triethyl bromogermane, triethyl fluorogermane, triethyl chlorogermane, dimethyl dichlorogermane, methyl trichlorogermane, diethyl dichlorogermane, diethyl dibromogermane, diphenyl dibromogermane, diphenyl dichlorogermane, ethyl trichlorogermane, ethyl tribromogermane, n-propyl trichlorogermane, tetraethyltin, trimethylethyltin, tetraallyltin, tetraphenyltin, phenyltrimethyltin, triphenylmethyltin, dimethyl dichloride tin, dimethyl tin dihydride, trimethyl tin hydride, triphenyl tin hydride, tetramethyllead, tetra-n-propyllead, tetraisopropyllead, trimethylethyllead, trimethyl-n-propyllead, and dimethyldiethyllead.

(E) M.sup.VI R.sub.6-s

In formula (E), s is equal to 1, 2, 3, 4 or 6. Examples of the compounds of formula (E) include hexaethyl germane, hexamethyl ditin, hexaethyl ditin, and hexaphenyl ditin.

(F) Acetylacetone complex salts

Examples are titanium acetylacetonate, aluminum acetylacetonate, cobalt acetylacetonate, iron acetylacetonate, copper acetylacetonate, nickel acetylacetonate, and manganese acetylacetonate.

In the formulae, R is an organic radical selected from alkyl having 1 to 10 carbon atoms, preferably alkyl having 1 to 6 carbon atoms, alkenyl having 2 to 6 carbon atoms, preferably allyl, aryl, preferably phenyl, and acyloxy, preferably maleoyl and acetyl; and X is hydrogen or halogen including fluorine, chlorine, bromine and iodine. Also included are phenylarsine oxide and analogs.

The plasma polymerization technique used herein is by creating an electric discharge plasma of a carrier gas such as argon (Ar), helium (He), hydrogen (H.sub.2) and nitrogen (N.sub.2), introducing an organometallic monomer into the discharge plasma, and contacting the activated gaseous mixture with the surface of a subject to be treated, thereby forming a plasma-polymerized film on the surface.

The principle of plasma polymerization is essentially the same as previously described for plasma treatment. Plasma polymerization utilizes a low-temperature plasma. An apparatus for forming a plasma-polymerized film on the surface of a subject may be of the same type as illustrated in FIG. 2. The treating gases used in the plasma treatment are replaced by a monomeric reagent and a carrier gas. The reagent may be fed at a flow rate of 1 to 250 ml per minute.

In operation, the reactor vessel R is first evacuated by means of the vacuum pump to a vacuum of 10.sup.-3 Torr or lower before reactant gas is fed into the vessel at a predetermined flow rate. Then the interior of the reactor vessel is maintained at a vacuum of 0.01 to 10 Torr. When the flow rate of the reactant gas becomes constant, the variable frequency power 54 is turned on to generate a plasma with which a polymerized film is formed on the subject 111.

In the plasma polymerization, a carrier gas may be used such as argon, helium, nitrogen and hydrogen.

The frequency of the power source is not critical to the plasma polymerization according to the present invention. The source may be of DC, AC, and microwave. It is to be noted that other parameters including supply current and reacting time may be as usual or properly selected without undue experimentation.

The plasma-polymerized film of organometallic compound is formed in this way to a thickness of 30 to 300 .ANG., preferably 50 to 300 .ANG.. Plasma-polymerized films of less than 30 .ANG. are too thin to accomplish the desired effect whereas films of more than 300 .ANG. are practically undesired because of increased spacing losses.

The plasma-polymerized organometallic film preferably contains metal atoms M and carbon atoms C in an atomic ratio M/C of 0.05 to 1.0, more preferably 0.08 to 0.8. Atomic ratios M/C of less than 0.05 little contribute to adhesion improvement whereas films having atomic ratios of more than 1.0 are too hard.

The plasma-polymerized film is a three dimensionally grown thin film of uniform thickness which firmly adheres to the underlying subject (e.g. substrate). Thus the medium having the plasma-polymerized film interposed therein exhibits very high durability.

The plasma-polymerized organometallic film 6 is generally formed directly on the metal thin film magnetic layer 5 as illustrated in FIG. 1. On the protective film 6 of plasma-polymerized organometallic compound is formed a topcoat 8 comprised of organic fluorine compound with or without interposing a protective film 7 of carbon. The plasma-polymerized organometallic film 6 plays a role of an intermediate layer for joining together the metal thin film magnetic layer 5 and the topcoat 8 or the protective carbon film 7 when applied. Because of the combined physical properties of metal and organic matter, the plasma polymerized organometallic film imparts outstandingly improved strength to the bonding interface in the resulting laminate structure. The durability of the resulting medium is markedly improved.

On the plasma-polymerized organometallic film 6 is formed the topcoat layer 8 comprised of an organic fluorine compound as described above. The material and preparation of the topcoat layer are as previously described in conjunction with the first embodiment.

Under the plasma-polymerized organometallic film 6 is formed the metal thin film magnetic layer 5 comprising cobalt or cobalt and Ni, Cr or P as used in the first embodiment.

With respect to the nonmagnetic substrate 2, undercoat layer 3, and intermediate nonmagnetic metal layer 4, the same as previously described in conjunction with the first embodiment also applies to this second embodiment including material, preparation, surface processing and other parameters.

Further, an additional protective film of nonmagnetic metal may be formed between the metal thin film magnetic layer 5 and the protective film 6 of plasma-polymerized organometallic compound although this arrangement is not shown in the drawing.

The protective carbon layer 7 may preferably formed directly on the protective film 6 of plasma-polymerized organometallic compound. The protective carbon layer applied in the preferred embodiment has a thickness of 10 to 800 .ANG., more preferably 100 to 400 .ANG..

Preferably a plasma treatment is carried out before the protective film 6 of plasma-polymerized organometallic compound is formed. More particularly, the surface of the magnetic layer 5 is plasma treated. In addition, the protective carbon film 7 is preferably plasma treated at its surface prior to its covering with the topcoat layer. The plasma treatment chemically activates the surface of the layer so that the overlying layer may be more firmly bonded to the underlying layer. The bond strength between the adjoining layers is then increased, offering significantly increased durability. The plasma treatment may be carried out as previously described.

According to the third aspect of the present invention, a magnetic recording medium comprises a nonmagnetic substrate, a metal thin film magnetic layer disposed on the substrate, the magnetic layer surface remote from the substrate being plasma oxidized, and a topcoat layer comprising an organic fluorine compound on the magnetic layer.

Referring to FIG. 1 again, the essential constituents of the magnetic recording medium according to the third embodiment are the substrate 2, magnetic layer 5, and topcoat 8 while any of the remaining layers may be formed at the illustrated location if desired.

The magnetic layer 5 used herein comprises a major proportion of cobalt or cobalt and at least one member selected from nickel, chromium and phosphorus as previously described, and preferably oxygen. In the third embodiment, the presence of oxygen in the magnetic layer is essential. Oxygen is introduced in the magnetic layer mainly by plasma oxidizing the magnetic layer surface as will be described later.

In the magnetic layer, the average atomic ratio of oxygen to cobalt (O/Co) preferably ranges from 0.01 to 0.3, more preferably from 0.01 to 0.2. Atomic ratios O/Co of more than 0.3 lead to deterioration in rectangular ratio known as one of magnetic parameters. The effect of this embodiment is not exerted with atomic ratios of less than 0.01.

Most preferably, the average atomic ratio of oxygen to cobalt in the region of the magnetic layer that extends from its surface remote from the substrate to 1/10th of its thickness is at least 3 times, especially at least 5 times the average atomic ratio of oxygen to cobalt in the region of the magnetic layer that extends from its surface adjacent to the substrate to 1/10th of its thickness. Outside this range, durability, abrasion resistance, and weatherability are less improved.

The magnetic layer of the above-mentioned organization may be formed by first depositing a thin film comprised predominantly of Co or Co plus Ni, Cr and/or P on a substrate usually via an undercoat layer by any suitable methods such as sputtering and plating. The thin film is then oxidized to introduce oxygen into a surface region where oxygen forms oxides with ferromagnetic cobalt and optional metal. In a surface region, particularly a surface region extending from the surface remote from the substrate to a depth of 100 .ANG., more preferably to a depth of 50 .ANG., a peak indicative of oxide is observed by Auger spectroscopy.

The oxidizing treatment used herein is plasma oxidation. The use of plasma oxidation enables on-line treatment and uniform oxidation to achieve stable oxidation treatment, forming a dense oxidized film. There are additional benefits of elimination of chemical liquid and low temperature treatment. Plasma oxidation may be carried out by using an oxidizing gas as a treating gas, activating the gas into a electric discharge plasma, and contacting the plasma with the surface of a thin film of Co-Ni or similar ferromagnetic metal or alloy. As a result of plasma oxidation, the medium is remarkably improved in durability, abrasion resistance, weatherability, and corrosion resistance.

The principle of plasma oxidation is essentially the same as that previously described in conjunction with the plasma treatment and plasma polymerization. A low-temperature plasma is utilized in this case too. Plasma oxidation may be practiced using the apparatus as shown in FIG. 2.

In operation, the reactor vessel R is first evacuated by means of the vacuum pump to a vacuum of 10.sup.-3 Torr or lower before a treating gas or gases are fed into the vessel at a predetermined flow rate of 1 to 250 ml per minute. Then the interior of the reactor vessel is maintained at a vacuum of 0.01 to 10 Torr. When the flow rate of the treating gas becomes constant, the variable frequency power is turned on to generate a plasma with which the subject is oxidized.

The treating gas used in plasma oxidation may be at least one oxidizing gas selected from air, O.sub.2, O.sub.3, H.sub.2 O, CO, CO.sub.2, and NO.sub.x including NO and NO.sub.2, and mixtures thereof. An inorganic gas such as nitrogen, argon, helium and neon may additionally be used in combination with the oxidizing gas.

The frequency of the power source is not critical to the plasma treatment according to the present invention. The source may be of DC, AC, high frequency, and microwave. Other parameters including supply current and treating time may be as usual or properly selected without undue experimentation.

The metal thin film magnetic layer has a thickness of 200 to 5,000 .ANG., preferably 500 to 1,000 .ANG..

Before plasma oxidation, the metal thin film magnetic layer has a chemical composition predominantly comprising cobalt or cobalt plus at least one of nickel, chromium and phosphorus as previously described.

On the magnetic layer 5 whose surface is plasma oxidized, a topcoat layer 8 comprised of an organic fluorine compound is formed.

With respect to the nonmagnetic substrate 2, undercoat layer 3, and intermediate nonmagnetic metal layer 4, the same as previously described in conjunction with the first embodiment also applies to the third embodiment including material, preparation, surface processing and other parameters.

Further, a protective film 6 of a nonmagnetic metal such as chromium may be formed between the metal thin film magnetic layer 5 and the topcoat 8 as previously described in conjunction with the first embodiment.

A protective carbon layer 7 may preferably formed on the protective nonmagnetic metal film 6. The protective carbon layer applied in the preferred embodiment has a thickness of 10 to 800 .ANG., more preferably 100 to 400 .ANG..

Preferably the surfaces of the protective nonmagnetic metal film 6 and the protective carbon film 7 are plasma treated as in the preceding embodiments. The plasma treatment enhances the bond between the treated layer and the overlying layer, resulting in media having improved durability. The plasma treatment may be carried out as previously described.

Although the essential layers for each embodiment are described in detail, such essential elements and optional elements are also applicable to different embodiments. For example, provision of a protective carbon layer and plasma treatment of layer surface are also applicable to the second and third embodiments. Provision of a plasma-polymerized organometallic layer is also applicable to the first and third embodiments. Plasma oxidation of the magnetic layer surface is also applicable to the first and second embodiments. Any desired combination of undercoat, intermediate and protective layers may be additionally provided in the respective embodiments.

Although the magnetic recording medium is described as a single-side recording medium as shown in FIG. 1, it may be a double-side recording medium wherein a series of layers including a magnetic layer are formed on each surface of a substrate in a similar manner as in FIG. 1.

Due to the presence of a carbon protective film on a metal thin film magnetic layer and a topcoat layer of an organic fluorine compound on the carbon protective film, and due to the plasma treatment of the upper and lower interfaces of the carbon protective film, the magnetic recording media according to the first aspect of the present invention exhibit improved durability, abrasion resistance, weatherability, and corrosion resistance as well as minimized head grip, offering high reliability in actual service.

Similar benefits are obtained with the magnetic recording media according to the second aspect of the present invention due to the presence of a protective layer of plasma-polymerized organometallic compound between the magnetic layer and the topcoat layer.

Similar benefits are obtained with the magnetic recording media according to the third aspect of the present invention because the topcoat layer is on the plasma-oxidized surface of the magnetic layer.

EXAMPLES

In order that those skilled in the art will better understand the practice of the present invention, examples of the present invention will be described below.

EXAMPLE 1

On a disk-shaped aluminum substrate having a diameter of 13 cm and a thickness of 1.9 mm was formed an undercoat layer of NiP to a thickness of 20 .mu.m by electroless The electroless plating was carried out by successively conducting the following steps under the described conditions.

NiP electroless plating

Steps & Their Conditions

(1) Alkaline degreasing: Alprep 204 (Okuno Seiyaku K.K.) 250 ml/l, 65.degree. C., 5 min.

(2) Acidic degreasing: Alprep 230 (Okuno Seiyaku K.K.) 150 ml/l, 65.degree. C., 5 min.

(3) Zincate: Arp 302 (Okuno Seiyaku K.K.) 250 ml/l, 25.degree. C., 30 sec.

(4) Zincate removal: 62 vol % conc. nitric acid 600 ml/l, 25.degree. C., 30 sec.

(5) Zincate: Arp 302 (Okuno Seiyaku K.K.) 250 ml/l, 25.degree. C., 20 sec.

(6) Surface adjustment: sodium bicarbonate 30 g/l, 20.degree. C., 30 sec.

(7) Nickel plating: Niclad 719A (Okuno Seiyaku K.K.) 80 ml/l Niclad 719B (Okuno Seiyaku K.K.) 150 ml/l, pH 4.5, 90.degree. C., 2 hours.

The thus deposited undercoat layer had a composition of Ni:P equal to 85:15 in weight ratio and a thickness of 20 .mu.m.

In addition to the aluminum substrate having an undercoat of NiP carried thereon, substrates of various materials including aluminum, glass (available from Corning Glass), and plastics (polyetherimide resin) were also employed as reported in Table 1.

Then, the surface of various substrates (or the surface of the undercoat layer if the substrate has an undercoat on its surface) was abraded under the following conditions.

Surface Abrasion

The lapping machine used was Model 9B-5P manufactured by Speedfam K. K. While the substrate is being rotated, its surface was abraded using an abrasion liquid, Medipole No. 8 (50% diluted) manufactured by Fujimi Kenma K. K. under a load of 100 grams for 10 minutes.

The abraded substrate was cleaned in a disk cleaning apparatus available from Speedfam Clean System K.K. This cleaning includes the following steps.

Cleaning

(1) Neutral cleaning,

(2) Superpure water, scrubbing,

(3) Superpure water, scrubbing,

(4) Superpure water, dipping and ultrasonic cleaning,

(5) Superpure water, dipping,

(6) Fron/ethanol mixture, dipping and ultrasonic cleaning,

(7) Fron/ethanol mixture, dipping,

(8) Fron/ethanol mixture, evaporation,

(9) Drying

After the cleaning procedure, the surface of the substrate (or the surface of the undercoat layer if the substrate has an undercoat on its surface) was provided with irregularities by a texturizing procedure as described below. Using a tape polishing machine manufactured by Tomoe Techno K.K., irregular grooves were formed on the substrate surface in a concentric pattern while the substrate is being rotated. The polishing parameters are: polishing tape #4000, contact pressure 1.2 kg/cm.sup.2, oscillation 50 cycles/min., and 150 work revolutions per minute.

After the substrate was cleaned again by substantially the same procedures as described above, the substrate was subjected to an etching treatment under an argon gas pressure of 0.2 Pa and an RF power of 400 W, and chromium was sputtered to form a nonmagnetic metal intermediate layer on the substrate to a thickness of 2,000 .ANG.. The sputtering parameters are: argon pressure 2.0 Pa and DC 8 kilowatts.

Thereafter, one of the following variety of metal thin film magnetic layers was formed contiguous to the intermediate layer. It should be noted that in case the magnetic layer be formed by electroless plating, the etching treatment mentioned above and the nonmagnetic metal intermediate layer of Cr were omitted.

Preparation of metal thin film magnetic layer

Magnetic layer No. 1 (ML1)

A CoNi magnetic layer was formed by sputtering under an argon pressure of 2.0 Pa and DC 8 kilowatts. The CoNi composition was Co/Ni=80/20 in weight ratio. The film thickness was 600 .ANG..

Magnetic layer No. 2 (ML2)

A CoNiCr magnetic layer was formed by sputtering under an argon pressure of 2.0 Pa and DC 8 kilowatts. The CoNiCr composition was Co/Ni/Cr=62.5/30/7.5 in weight ratio. The film thickness was 600 .ANG..

Magnetic layer No. 3 (ML3)

A CoCr magnetic layer was formed by sputtering under an argon pressure of 2.0 Pa and DC 8 kilowatts. The CoCr composition was Co/Cr=87/13 in weight ratio. The film thickness was 1000 .ANG..

Magnetic layer No. 4 (ML4)

A CoNiP magnetic layer was formed by electroless plating under conditions described below. The CoNiP composition was Co/Ni/P=6/4/1 in weight ratio. The film thickness was 1000 .ANG..

The steps and conditions of the electroless plating process are given below.

(1) Alkaline degreasing: Alprep 204 (Okuno Seiyaku K.K.) 250 ml/l, 65.degree. C., 5 min.

(2) Acidic degreasing: Alprep 230 (Okuno Seiyaku K.K.) 150 ml/l, 65.degree. C., 5 min.

(3) Hydrochloric acid degreasing: 5 vol % HCl, 25.degree. C., 1 min.

(4) Sulfuric acid degreasing: 5 vol % H.sub.2 SO.sub.4, 25.degree. C., 1 min.

(5) Nickel plating: Niclad 719A (Okuno Seiyaku K.K.) 80 ml/l+Niclad 719B (Okuno Seiyaku K.K.) 150 ml/l, pH 4.5, 90.degree. C., 30 sec.

On each of the various metal thin film magnetic layers thus deposited was formed a protective nonmagnetic metal film of Cr. Film deposition was by sputtering chromium under an argon gas pressure of 2.0 Pa and DC 8 kilowatts. The film was 200 .ANG. thick.

The surface of the protective nonmagnetic metal film was plasma treated under the following conditions.

On the plasma-treated protective film was formed a protective carbon film as reported in Table 1 by sputtering carbon under an argon gas pressure of 0.2 Pa and DC 8 kilowatts. The protective film was 400 .ANG. thick.

It is to be noted that only when the metal thin film magnetic layer is of magnetic layer No. 4 as identified above, the surface of the metal thin film magnetic layer was etched under an argon gas pressure of 0.2 Pa and an RF power of 400 watts immediately before the protective nonmagnetic metal film was deposited.

The surface of the protective carbon film was plasma treated under the same conditions as above, if desired as reported in Table 1.

The surface of the protective carbon film was cleaned with unwoven fabric. On top of the protective carbon film was formed a topcoat layer by depositing a topcoat composition containing selected one of various organic fluorine compounds as mentioned below using spin coating, vacuum deposition and sputtering. All the topcoat layers were formed to a thickness of 50 .ANG..

Topcoat layer composition

Topcoat Composition 1 (TC1)

The topcoat layer was formed by spin coating. The organic fluorine compound used was KRYTOX 157FS commercially available from E. I. DuPont and having the structural formula: ##STR7## wherein n is 11 to 49. The fluorine compound was mixed with a solvent, Fron 113 (Daifron S-3 available from Daikin Kogyo K.K.) to form a coating solution containing 0.05% by weight of the fluorine compound. The solution was spin coated at 1,000 revolutions per minute for 10 seconds.

Topcoat composition 2 (TC2)

The topcoat layer was formed by spin coating. The organic fluorine compound used was KRYTOX 143AZ commercially available from E. I. DuPont and having a molecular weight of 2,000 and the structural formula: ##STR8## The fluorine compound was mixed with a Fron 113 solvent to form a coating solution containing 0.05% by weight of the fluorine compound. The solution was spin coated under the same conditions as TC1.

Topcoat Composition 3 (TC3)

The topcoat layer was formed by spin coating. The organic fluorine compound used was FOMBLIN Y 25 having a molecular weight of 3,000 and commercially available from Montefluos Company. The fluorine compound was mixed with a Fron 113 solvent to form a coating solution containing 0.05% by weight of the fluorine compound. The solution was spin coated under the same conditions as TC1.

Topcoat composition 4 (TC4)

The topcoat layer was formed by spin coating. The organic fluorine compound used was FOMBLIN Z DEAL commercially available from Montefluos Company and having the structural formula:

where m and p each are 11 to 49. The fluorine compound was mixed with a Fron 113 solvent to form a coating solution containing 0.05% by weight of the fluorine compound. The solution was spin coated under the same conditions as TC1.

Topcoat composition 5 (TC5)

The topcoat layer was deposited by vacuum deposition. The evaporation source material used was the solids of KRYTOX 157FS. The evaporation conditions included an argon atmosphere at a pressure of 1.times.10.sup.-2 Pa and a sample-to-source distance of 5 cm.

Topcoat Composition 6 (TC6)

The topcoat layer was deposited by vacuum deposition. The evaporation source used was the solids of FOMBLIN Y 25 having a molecular weight of 3,000 and commercially available from Montefluos Company. The evaporation conditions were the same as those of TC 5.

Topcoat composition 7 (TC7)

The topcoat layer was deposited by sputtering. The source material used as the target in sputtering was KRYTOX 157FS. The resin composition was applied onto a plate followed by evaporation of the solvent therefrom, obtaining a plate-like target of the solid resin.

The sputtering conditions included a sputtering power of 3 kW, an operating pressure of 1 Pa and a sample-to-target distance of 10 cm. The resin target had dimensions of about 15 cm by 30 cm. The inert gas used in the sputtering was argon.

Topcoat composition Si-Oil

The material used was a silicone oil (Toshiba Silicone TSF451) having a viscosity of 1,000 centipoise. The material was mixed with a Fron 113 solvent to form a coating solution containing 0.05% by weight of the material. The solution was spin coated under the same conditions as TC1.

Coating composition Si-Oil, which is outside the scope of the present invention, was employed for comparative purposes.

In this way, a number of magnetic disk samples were fabricated as reported in Table 1 and measured for various properties.

(1) CSS

A contact-start-and-stop (CSS) test was carried out. The number of errors per disk recording side of a magnetic disk sample was counted both immediately after fabrication and after 50,000 contact-start-and-stop cycles. An increase of the number of errors or missing pulses before and after the CSS test was reported in bits per side.

The number of errors per disk recording side was counted using a disk certifier manufactured by Hitachi Electronic Engineering K.K. with the slicing level of missing pulses set at 70%.

(2) Surface observation

At the end of the CSS test, the surface of a sample was observed under a scanning electron microscope.

The crazing or cracking state of the surface was evaluated in four grades.

E: No crazing

G: Crazing only on topcoat surface

F: Cracks to protective film surface

P: Deep cracks to protective and magnetic films

The results are shown in Table 1.

EXAMPLE 2

On each of the various metal thin film magnetic layers deposited by the same procedures as in Example 1 was formed a plasma-polymerized organometallic film under the plasma polymerization conditions shown below.

Plasma-polymerized organometallic film 1 (PPOM1)

Gaseous monomer: tetramethyltin

Monomer flow rate: 10 ml/min.

Carrier gas: argon

Carrier flow rate: 50 ml/min.

Vacuum: 0.5 Torr

High frequency power source: 13.56 MHz, 200 watts.

The polymerized film was measured to have a uniform thickness of 180 .ANG. using the multiple interference technique and an ellipsometer. Fourier transformation infrared spectroscopy and electron spectroscopy for chemical analysis (ESCA) showed that the film is a thin polymerized film containing tin. Metal to carbon ratio (M/C)=0.35.

Plasma-polymerized organometallic film 2 (PPOM2)

A polymerized film was deposited under the same conditions as used for polymerized film 1 except that the monomer used was titanium acetylacetonate. The film was 150 .ANG. thick and had a M/C ratio of 0.21.

Plasma-polymerized organometallic film 3 (PPOM3)

A polymerized film was deposited under the same conditions as used for polymerized film 1 except that the monomer used was dimethylmagnesium. The film was 170 .ANG. thick and had a M/C ratio of 0.31.

Plasma-polymerized organometallic films 4-8 (PPOM4-8)

Polymerized films were deposited in a similar manner to polymerized film 1. The monomer used was trimethylaluminum. Polymerized films having varying M/C ratios were obtained by controlling the operating conditions within the ranges of power 10 watts to 1 kilowatts, monomer gas flow rate 1 to 250 ml/min., and vacuum 0.01 to 1 Torr.

The films were 150 .ANG. thick and had different M/C ratios as shown in Table 2.

Plasma-polymerized organometallic film 9 (PPOM9)

A polymerized film was deposited under the same conditions as used for polymerized film 1 except that the monomer used was tetraethyltin. The film was 150 .ANG. thick and had a M/C ratio of 0.19.

Plasma-polymerized organometallic films 10-12 (PPOM10-12)

Polymerized films were deposited under the same conditions as used for polymerized film 1 except that the operating time was changed to form films of varying thicknesses as shown in Table 2.

On the plasma-polymerized film was formed a protective carbon film by sputtering carbon at an argon gas pressure of 0.2 Pa and a power of DC 8 kilowatts. The protective carbon film was 250 .ANG. thick.

It is to be noted that only when the metal thin film magnetic layer is of magnetic layer No. 4 as identified in Example 1, the surface of the metal thin film magnetic layer was etched at an argon gas pressure of 0.2 Pa and an RF power of 400 watts immediately before the plasma-polymerized organometallic film was deposited.

The surface of the protective carbon film was plasma treated. The plasma treating conditions were treating gas N.sub.2, pressure 0.04 Torr, source 13.56 MHz high frequency, and power supplied 3 kilowatts.

The surface of the protective carbon film was cleaned with unwoven fabric. On top of the protective carbon film was formed a topcoat layer by depositing a topcoat composition containing selected one of the organic fluorine compounds identified in Example 1 using spin coating, vacuum deposition and sputtering. All the topcoat layers were formed to a thickness of 50 .ANG..

In this way, a number of magnetic disk samples were fabricated as reported in Table 2 and measured for various properties.

Sample No. 210 omitted the protective carbon film between the plasma-polymerized organometallic film and the topcoat and the subsequent plasma treatment thereon. For sample No. 211, the protective carbon film was formed between the plasma-polymerized organometallic film and the topcoat, but the subsequent plasma treatment thereon was omitted.

(1) CSS

A contact-start-and-stop (CSS) test was carried out. The number of errors per disk recording side of a magnetic disk sample was counted both immediately after fabrication and after 40,000 contact-start-and-stop cycles. An increase of the number of errors or missing pulses before and after the CSS test was reported in bits per side.

The number of errors per disk recording side was counted using a disk certifier manufactured by Hitachi Electronic Engineering K.K. with the slicing level of missing pulses set at 60%.

(2) Coefficient of friction (.mu.)

After the 40,000-cycle CSS test, the disk in contact with the head was allowed to stand at 20.degree. C. and RH 60% for three days. The surface of the disk sample was measured for coefficient of friction. The head used was an Mn-Zn ferrite head.

The results are shown in Table 2.

EXAMPLE 3

The procedures of Example 1 were followed until the intermediate nonmagnetic metal layer of Cr was formed by sputtering. Thereafter, one of the following variety of metal thin film magnetic layers was formed contiguous to the intermediate layer. It should be noted that in case the magnetic layer be formed by electroless plating, the etching treatment of the undercoat and formation of the nonmagnetic metal (Cr) intermediate layer were omitted.

Preparation of metal thin film magnetic layer

Magnetic layer No. 11 (ML11)

A CoNi magnetic layer was formed by sputtering under an argon pressure of 2.0 Pa and DC 8 kilowatts. The CoNi composition was Co/Ni=80/20 in weight ratio. The film thickness was 600 .ANG..

The surface of the magnetic layer was then oxidized with a plasma under the following conditions.

Treating gas: NO.sub.2

Gas flow rate: 10 SCCM (standard cubic centimeter)

Vacuum: 0.05 Torr

Power: 13.56 MHz

The oxidized magnetic layer had the following oxygen to cobalt ratios.

Average O/Co=0.1

(O/Co)u=0.8

(O/Co)l=0.01

It is to be noted that (O/Co)u is the ratio of O/Co in the upper region of the magnetic layer that extends from its upper or exposed surface to a depth of 1/10th of its thickness. (O/Co)l is the ratio of O/Co in the lower region of the magnetic layer that extends from its lower surface adjacent to the substrate to a level of 1/10th of its thickness.

Magnetic layer No. 12 (ML12)

The surface of the magnetic layer was then oxidized with a plasma under the following conditions.

Treating gas: O.sub.2

Gas flow rate: 25 SCCM

Vacuum: 0.01 Torr

Power: 2.45 GHz

The oxidized magnetic layer had the following oxygen to cobalt ratios.

Average O/Co=0.08

(O/Co)u=0.5

(O/Co)l=0.01

Magnetic layer No. 13 (ML13)

A CoCr magnetic layer was formed by sputtering under an argon pressure of 2.0 Pa and DC 8 kilowatts. The CoCr composition was Co/Cr=87/13 in weight ratio. The film thickness was 1000 .ANG..

The surface of the magnetic layer was then oxidized with a plasma under the following conditions.

Treating gas: O.sub.2

Gas flow rate: 25 SCCM

Vacuum: 0.01 Torr

Power: 2.45 GHz

The oxidized magnetic layer had the following oxygen to cobalt ratios.

Average O/Co=0.15

(O/Co)u=1.0

(O/Co)l=0.008

Magnetic layer No. 14 (ML14)