JFET Pinch Off Voltage Proportional Reference Current Generating Circuit

This invention relates generally to a current source circuitry, and more particularly to a circuit for generating a reference current which is proportional over temperature to the ratio of the pinch-off voltage (V.sub.P) of a standard junction field effect transistor (JFET) to some resistance.

As is well known, the pinch off voltage V.sub.P is the voltage at which there is substantially zero source-to-drain current in a JFET. That is, no current will flow in the JFET if the JFET's gate is pulled high enough in voltage with respect to its source. Up to now, this could be accomplished only by using a very large area JFET and placing a large resistance between its gate and source terminals.

A reduction in the size of the JFET has been accomplished by incorporating into the circuit a large NPN transistor and a diode. In either event, large devices have been necessary which occupy a significant amount of die area.

It is an object of the invention to provide an improved circuit for generating a reference current proportional over temperature to the ratio of the pinch-off voltage V.sub.P of a standard JFET to some resistance.

It is a further object of the present invention to provide a circuit for generating a reference current which is proportional over temperature to the ratio of the pinch-off voltage of a JFET to some resistance and which is independent of the size of the JFETs utilized.

In accordance with a broad aspect of the invention there is provided a circuit for generating a reference current proportional over temperature to the ratio of the pinch-off voltage V.sub.P of a JFET to some resistance, comprising a JFET having a source coupled to a first source of supply voltage, a gate, and a drain; first means coupled to the drain of the JFET for imparting a negative gate-to-source voltage on the JFET; and first resistive means coupled between the gate and source of the JFET for producing the reference current.

The above and other objects, features and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic diagram of a circuit for generating a reference current proportional to V.sub.P in accordance with the prior art; and

FIG. 2 is a schematic diagram of a circuit for generating a reference current proportional over temperature to V.sub.P in accordance with the present invention.

FIG. 1 is a schematic diagram of a circuit for generating a reference current (I.sub.ref) proportional to the pinch-off voltage V.sub.P of JFET Q. As cas be seen, a resistor R is placed between its source and gate, and the desired reference current appears at its drain. Both the gate of JFET Q and its source (via resistor R) are coupled to a source of supply voltage V.sub.CC. It is well known that ##EQU1## where V.sub.gs is the gate-to-source voltage of JFET Q and I.sub.DSS represents the current through JFET Q when its gate is tied to its source. It is to be noted that I.sub.DSS is strictly a function of the size of JFET Q. If I.sub.ref is substantially less than I.sub.DSS then

It can be seen, however, that for a reasonable value of I.sub.ref (e.g. 100 microamps) then I.sub.DSS must be approximately equal to 10 times I.sub.ref or one milliamp in order to satisfy the requirement that I.sub.ref be substantially less than I.sub.DSS. In order to achieve an I.sub.DSS of one milliamp, the width-to-length ratio Z/L of the JFET must be approximately 125. Assuming that V.sub.P is equal to one volt, then

FIG. 2 is a schematic diagram of a current source which generates a reference current proportional over temperature to V.sub.P wherein I.sub.ref is independent of the size of the JFETs employed. A first JFET Q.sub.1 has its source coupled to a source of supply voltage V.sub.CC and its gate coupled via a resistor R.sub.1 to V.sub.CC. A second JFET Q.sub.2 has its source coupled to its gate and to the drain of JFET Q.sub.1. The drain of JFET Q.sub.2 is coupled to ground. Finally, a third JFET Q.sub.3 has its source coupled via resistor R.sub.2 to the gate of JFET Q.sub.1 and has a gate coupled to the source and gate terminals of JFET Q.sub.2. The function of JFETQ3 is to set the voltage at the source of JFETQ2 by providing negative feedback. The desired reference current I.sub.ref appears at the drain of JFET Q.sub.3.

JFET Q.sub.2 having its source tied to its gate develops a current I.sub.DSSQ2 which is proportional to its size as previously described. JFET Q.sub.2 is also chosen to be slightly larger than JFET Q1, therefore, I.sub.DSSQ2 is greater than I.sub.DSSQ1. Since I.sub.DSSQ2 is being driven through JFET Q1, the gate to source voltage of Q.sub.1 is negative (e.g. 50-100 milivolts). Thus, ##EQU2## Since

where I.sub.D3 is the drain current of JFET Q3, then ##EQU3## Solving for R.sub.1 yields ##EQU4##

Assume that V.sub.P equal one volt, I.sub.DSS equals 8 microamps per Z/L, I.sub.D3 equals 100 microamps and that the (Z/L) of JFETS Q1, Q2 and Q3 are 5, 6, and 8.6 respectively. Substituting into equation 8 yields an R1 equal to 954 ohms.

I.sub.DSSQ3 may be determined from the following equation: ##EQU5## Solving for I.sub.DSSQ3 yields I.sub.DSSQ3 =69 microamps. Therefore, Z/L of Q.sub.3 equals 8.6.

Thus it can be seen that the total Z/L of the circuit shown in FIG. 2 is 19.6 while that of the prior art circuit shown in FIG. 1 was 125. Furthermore, the total resistance of the circuit shown in FIG. 2 is somewhat reduced from that shown in FIG. 1. Finally, the desired reference current I.sub.ref equals I.sub.D3 as is shown in equation 6. It is not an approximation as was the case with the prior art circuit as shown by equation 3.

The above description is given by way of example only. Changes in form and details may be made by one skilled in the art without departing from the scope of the invention as defined by the appended claims.