US 4,702,965 AGrant
Low Vacuum Silicon Thin Film Solar Cell and Method of Production
Issue Date:1987-10-27
•7 Claims
Abstract
A method and apparatus for producing thin film silicon solar cells by the deposition of successive passivation and silicon layers in a vacuum of low 10.sup.-4 to high 10.sup.-5 torr is disclosed. The method utilizes three principal sources: a semiconductor, gaseous ion and dopant. Evaporation at low vacuum is achieved by heating solid silicon indirectly in a crucible of refractory material or directly in a crucible of conductive material. Alternatively, the solid silicon can be heated indirectly with rf power. The gaseous plasma and dopant(s) are provided from suitable sources. The result is the deposition of semiconductor material and dopant in the presence of a gaseous plasma at low vacuum. The plasma eliminates contamination from the low vacuum.
Metadata
Assignee
- Birch; Richard J.
Inventor
- Pao-Hsien Fang
Application Information
Application Number:US 8105332
Filing Date:1985-12-17
Priority Date:1979-10-22
Art Unit:152
Classifications
IPC:
B05D 512
Field of Search:
428427457;688;70438;45.1;51;74;85;86;88;248.1;295;402
Patent Drawings
This patent does not have any drawings.
Claims
What I claim and desire to secure by Letters Patent of the United States is:
1. A method for producing semiconductor solar cells comprising the steps of: establishing a vacuum environment of low 10.sup.-4 to high 10.sup.-5 range; positioning a deposition substrate in said vacuum environment; introducing a gaseous plasma into said vacuum environment to replace the residual gases therein; and, depositing successive passivation and semiconductor layers onto said deposition substrate in the presence of said gaseous plasma with at least some of said semiconductor layers being doped, said semiconductor layers being deposited by evaporation with the semiconductor material forming said semiconductor layers coming from a solid source.
2. The method of claim 1 wherein said semiconductor material is silicon and further comprising the step of producing deposition silicon by indirectly heating solid silicon in a crucible of refractory materials that is heated by heating elements.
3. The method of claim 1 wherein said semiconductor material is silicon and further comprising the step of producing deposition silicon by directly heating solid silicon in a crucible of conductive material by passing an electric current therethrough.
4. The method of claim 1 wherein said semiconductor is silicon and further comprising the step of producing deposition silicon by inductively heating solid silicon.
5. The method of claim 1 further comprising the step of producing said gaseous plasma by passing the gas through a chamber having a heated tungsten element therein which produces electrons to ionize the gas.
6. A method for producing a heterostructure solar cell having microcrystal silicon superposed on amorphous silicon, said method comprising the steps of: 1. positioning a steel substrate in a vacuum environment; 2. establishing a vacuum of high 10.sup.-5 torr range and then heating the substrate to between 250.degree. and 450.degree. and introducing an ionized gas into said vacuum environment; 3. evaporating and depositing in sequence on the substrate the following layers of materials while a vacuum of a low 10.sup.-4 torr range is maintained: (a) a passivation metal layer of 500 Angstroms, (b) a n-doped silicon layer of 300 Angstroms, (c) an intrinsic silicon layer of 5000 Angstroms; and, (d) a p-doped silicon layer of 30 Angstroms. 4. after deposition of the p-doped silicon layer, raising the substrate temperature to 630.degree. C. in a time of 5 to 10 minutes which is sufficiently long to establish a thermal equilibrium, but not too long to induce a crystallization of the amorphous layer of silicon deposited in Step 3; 5. after the 630.degree. C. temperature is reached, depositing a p-layer of microcrystal silicon of a thickness of 500 Angstroms; 6. thereafter, lowering the temperature in a hydrogen plasma ambient to 250.degree. C. in 10 to 30 minutes; and, 7. completing the solar cell by attaching thereto a top electrode.
7. A solar cell produced by the method of claim 6.