Field of the Invention
The invention is related to circuits providing limiting of a variable input signal. In particular, the invention is related to an integrated circuit CMOS device for limiting the absolute value of the level of a variable input signal while providing input hysteresis.
Background of the Invention
One of the methods used in the past to reduce the effect of noise present in the input signal of a comparator and to permit precise control of the comparator trip point is to introduce hysteresis feedback in the comparator circuit. See, e.g. Graeme, Jerald G., Designing with Operational Amplifiers, 60-62 (McGraw-Hill Book Co. 1977). A hysteresis control signal is typically switched (through a diode) to the comparator input. Switching occurs dependent upon the output of the comparator. Trip-point errors are reduced by the introduced hysteresis. Unfortunately, such diode clipper circuits are incompatible with CMOS technologies. Monolithic hysteresis comparators employing bipolar junction transistors and introducing hysteresis through emitter feedback are also known. See, e.g. U.S. Pat. No. 3,998,595 to Eatock (issued Oct. 26, 1976).
Another method known in the art for reducing errors in a comparator circuit is to use a chopper stabilized A-C coupled amplifier as a buffer. The output of the buffer is switched between the two inputs of a comparator. The output of the comparator is responsive to the difference in potential between the two inputs. Such a scheme is disclosed in U.S. Pat. No. 4,237,390 to Buurma (issued Dec. 2, 1980). This reference also discloses a coupling capacitor for coupling the buffer amplifier to the switched input. A switch is arranged to periodically connect the output of the comparator to the input of the comparator to drive the comparator to the trip point. The circuit taught by the Buurma reference reduces the effect of input capacitance on the operation of the comparator.
Switching comparators implemented in CMOS technology are disclosed in McGrogan, Jr. (U.S. Pat. No. 3,676,702, issued July 11, 1972) and Aoki et al (U.S. Pat. No. 4,211,942, issued July 8, 1980). Such known CMOS switching comparators require multiple active stages operating at linear operating points (operational amplifiers), thus requiring relatively large amounts of power and introducing error in the comparator output.
CMOS differential comparators utilizing hysteresis to decrease the effect of noise on the comparator output are disclosed in U.S. Pat. No. 4,394,587 to McKenzie et al (issued July 19, 1983) and U.S. Pat. No. 4,110,641 to Payne (issued Aug. 29, 1978). The circuits disclosed in these references likewise have substantial power supply requirements due to utilization of several active elements operating at linear operating points.
Other exemplary prior art patents of possible general interest to differential amplifiers MOS sense amplifiers, CMOS switched circuits and signal magnitude measurements are:
U.S. Pat. No. 3,660,774 to Eachus (1972);
U.S. Pat. No. 4,375,039 to Yamauchi (1983); and
U.S. Pat. No. 4,323,887 to Buurma (1982).
U.S. Pat. No. 4,068,138 to Miyakawa et al (issued Jan. 10, 1978) discloses a single converter which compares a varying input voltage with a predetermined reference voltage. The operational amplifier has negative and positive input terminals and generates an output voltage signal in proportion to the difference between the voltages applied to its two input terminals. When the input voltage is less than the reference voltage, one group of electronic switches turns on, so that the input voltage and the reference voltage are applied to the negative and the positive input terminals of the operational amplifier, respectively. When the input voltage is greater than the reference voltage, the other group of the electronic switches turns on, so that the input voltage and the reference voltage are applied to the positive and the negative input terminals of the operational amplifier, respectively. The input voltage is thereby converted into an output voltage in absolute value.
The relatively recent development of CMOS switched-capacitor technology provides a way to incorporate on a single integrated circuit a high density of switching, resistive, capacitive and linear amplifier elements having very low power consumption. Moreover, the development of techniques for fabricating capacitive and resistive elements to precise values (such as, for example, by fabricating precision MOS capacitive elements wherein the ratio of two MOS capacitors defines the value of the element) has permitted the development of circuits comprising components having excellent temperature and voltage stability coefficients as well as component value which may be accurately and precisely specified. Such technology has been particularly applied in monolithic signal filtering applications. See, e.g., Allstot et al, TECHNOLOGICAL DESIGN CONSIDERATIONS FOR MONOLITHIC MOS SWITCHED-CAPACITOR FILTERING SYSTEMS (Proceedings of the IEEE, Vol. 71, No. 8, August 1983).
Summary of the Invention
The present invention is a CMOS limiter responsive to an input signal with varying amplitude for producing an output signal which changes between at least a first and a second level. The transition in the output signal occurs when the absolute value of the amplitude of the input signal exceeds a predetermined reference level.
The limiter samples the input signal and inverts the sampled input signal. The sampling and inverting may be performed by MOSFET (metal oxide semiconductor field effect transistor) switching elements and precision capacitors. A switching array (comprised of MOSFET switching elements) selects between the sampled input signal and the inverted sampled input signal depending upon the value of the output signal produced by the limiter.
A comparing network sets the output signal of the limiter to the first level when the selected signal exceeds the predetermined reference value and sets the output signal of the limiter to the second level when the selected signal is less than the negative of the predetermined reference value. The comparing network may include a summer for summing the selected signal with the predetermined reference level. This summer may alternately receive the predetermined reference level and the selected signal, and may include a signal level storing means for storing the reference level and a summing node for producing a signal level proportional to the difference between the selected signal and the predetermined reference level.
A CMOS-implemented active (operational amplifier) comparator responsive to the difference signal produced by the summing node may be used to produce a signal when the difference signal exceeds ground potential. The input offset voltage of the active comparator may also be subtracted from the selected signal in order to reduce the output error of the comparator due to non-zero input offset voltage. The input offset voltage may be applied to the summing node during the interval when the input signal is being sampled.
The limiter may further include a clock generator for producing a clock signal and sequential logic responsive to the clock signal and to the output of the comparator for producing the output signal of the limiter and for controlling the synchronization of the various switching elements.
Because of the advantages provided by switched capacitor CMOS techniques, the fixed reference level may be set very precisely. Only a single linear operational amplification stage (the comparator) is used, so that the limiter has very low power consumption. The input offset voltage of the comparator is nulled out, so that output error is reduced substantially. Finally, the entire limiter circuit may be fabricated on a single CMOS integrated circuit chip.
Brief Description of the Drawings
A more completed understanding of this invention and appreciation of its improvements and advantages may be obtained from the following detailed description and accompanying drawings, of which:
FIG. 1 is a schematic diagram of a presently preferred exemplary embodiment of the present invention;
FIGS. 2(a)-2(b) are graphical illustrations of the input and the output voltages of the embodiment shown in FIG. 1; and
FIG. 3 is a timing diagram showing the relationship between various signals produced by the embodiment shown in FIG. 1.
Detailed Description of the Preferred Embodiment
The present invention provides voltage limiting, within a predetermined "window," of a varying input signal. FIGS. 2(a)-2(b) show the relationship between the input and output signals of a limiter in accordance with the present invention. The output of the limiter changes state only when the input V.sub.in satisfies the following:
(where V.sub.lim is a reference voltage of a predetermined level). In other words, the output signal V.sub.out changes state whenever either V.sub.in <V.sub.lim or V.sub.in >-V.sub.lim (the present invention may hence be described as an infinite gain limiter).
The output V.sub.out of the limiter should not change state for .vertline.V.sub.in .vertline..ltoreq.V.sub.lim, but rather should retain its latest value. Once V.sub.out changes state for V.sub.in >V.sub.lim, V.sub.out will not again change state until V.sub.in <-V.sub.lim. Likewise, once V.sub.out changes state for V.sub.in <-V.sub.lim, V.sub.out will not again change state until V.sub.in >V.sub.lim. V.sub.out is graphically illustrated in FIG. 2(b) for an arbitrary input signal V.sub.in shown in FIG. 2(a).
A schematic diagram of the presently preferred exemplary embodiment of a limiter 10 in accordance with the present invention is shown in FIG. 1. One preferred embodiment of limiter 10 is fabricated on a single integrated circuit chip using any conventional double poly CMOS technology. A reference source 12 and a clock generator 54 may be external to the monolithic limiter 10 for added flexibility in controlling the operating parameters of the limiter.
A reference source 12 (typically a variable, highly-stable reference voltage source) produces a predetermined reference signal V.sub.lim, which determines the input voltage level at which transitions of the output voltage of the limiter occur. V.sub.lim is selectively applied to a summing node A by a MOSFET switching element 14 when a signal .phi..sub.2 is high (i.e. logic level 1).
V.sub.in (the input signal to be limited) is sampled by a MOSFET switching element 16 and a capacitor 18. Switching element 16 applies V.sub.in to capacitor 18 when signal .phi..sub.2 is high. V.sub.in is also sampled and inverted by MOSFET switching elements 20, 22 and 24 and a capacitor 26. When the signal .phi..sub.2 is high, V.sub.in is applied to a first connection 28 of capacitor 26 through MOSFET switching element 20, while a second connection 30 of the capacitor is connected to ground potential through MOSFET switching element 22. When a signal .phi..sub.1 is high, first connection 28 of capacitor 26 is grounded to ground potential, and the inverted sampled V.sub.in may be obtained from second connection 30 of the capacitor. .phi..sub.1 and .phi..sub.2 are non-overlapping (i.e. they are never high simultaneously).
The values of capacitors 18 and 26 should be chosen to be small enough to permit charging during the interval when the control signals are high, yet large enough to minimize the effect of clock feedthrough offsets (i.e. voltage offsets produced by storage of clock signals in the capacitance between capacitor 18 and switching elements 16 and 32 and between capacitor 26 and its associated switching elements) and charge injection due to the MOSFET transmission gates. Capacitors 18 and 26 have equal capacitance in the preferred embodiment to balance the effect of errors which may be introduced.
A first switching network comprising MOSFET switching element 32 and a MOSFET switching element 34 selectively apply one of the sampled signal level of V.sub.in (stored on capacitor 18) and the sampled inverted signal level of V.sub.in (stored on capacitor 26) to summing node A. Switching element 32 applies sampled V.sub.in to summing node A when a signal .phi..sub.3 is high, while switching element 34 applies inverted sampled V.sub.in to summing node A when a signal .phi..sub.4 is high. Summing node A comprises a simple hard-wired connection of switching elements 14, 32 and 34 and a capacitor 38. The relationship between .phi..sub.1, .phi..sub.2, .phi..sub.3, and .phi..sub.4 will be explained in greater detail shortly.
A comparator network including an active CMOS comparator 36 and capacitor 38 are connected to summing node A. The "-" input 40 of comparator 36 is connected to summing node A via capacitor 38, while the "+" input of the comparator is connected to ground potential. Comparator 36 is a conventional CMOS comparator which produces an output signal V.sub.comp which is low (i.e. assumes logic level "0") when the signal applied to input 40 is greater than the signal applied to input 42, and is high (i.e. assumes logic level "1") when the signal applied (i.e. assumes logic level "1") when the signal applied to input 40 is less than the signal applied to input 42. Thus, V.sub.comp will be low if V.sub.A (the voltage level at node A) exceeds V.sub.c (the voltage across capacitor 38). V.sub.comp will be high when V.sub.c >V.sub.a.
The output of comparator 36 is applied to a sequential digital logic circuit 43 which produces output signal V.sub.out of limiter 10 and controls the states of switching elements 32 and 34.
V.sub.comp is applied to the input of a conventional digital logic inverter 44. The output of inverter 44 is applied to one of the two inputs of a NAND gate 46. The output of NAND gate 46 is applied to one of the inputs of a two-input NAND gate 48. The output of NAND gate 48 is applied to the D input of a D-type conventional flip flop 50, the Q output of which is applied to an input of a two-input NAND gate 52. The output of NAND gate 52 is applied to the other input of NAND gate 48.
A clock generator 54 produces a periodic clock signal .phi..sub.0. In the preferred embodiment, clock generator 54 is a conventional free-running square wave oscillator operating at a fixed frequency. The frequency of clock generator 54 is chosen to be high enough to minimize the effect of leakage of capacitors 18, 26 and 38 on circuit performance as well as to handle the input frequency range of V.sub.in. The output of clock generator 54 is applied to the input of an inverter 56. The output of inverter 56 is applied to the input of an inverter 58 and to the T input of a falling-edge sensitive T-type flip flop 60. The output of inverter 58 is used to clock flip flop 50, while the output of inverter 56 is used to control the state transitions of flip flop 60. As is well known, every time the signal applied to the T input of flip flop 60 changes from a logic 1 to a logic 0, the Q output of the flip flop is complemented. Flip flop 60 thus functions to divide the frequency of .phi..sub.0 by two. As will be explained, flip flop 50 maintains the present output of NAND gate 48 during periods in which the output of comparator 36 (V.sub.comp) is undefined whenever .phi..sub.2 is high.
The Q output of flip flop 60 is applied to a sampling controller block 62 which produces two non-overlapping clock signals .phi..sub.1 and .phi..sub.2 (discussed earlier). .phi..sub.1 and .phi..sub.2 are non-overlapping clock signals in that they never assume logic level 1 simultaneously. In the preferred embodiment, .phi..sub.1 and .phi..sub.2 are the complements of one other. Sampling controller block 62 is of conventional design, and, in the preferred embodiment, comprises a combinational logic array which produces non-overlapping .phi..sub.1 and .phi..sub.2 each of which are at the same frequency as the signal produced at the Q output of flip flop 60. .phi..sub.1 is applied to the other input of NAND gate 46 directly and through the other input of NAND gate 52 through an inverter 63.
The output of NAND gate 48, in addition to being applied to the D input of flip flop 50, is also applied to an input of a two-input AND gate 64. The other input of AND gate 64 is connected to .phi..sub.2, while the output of the AND gate is connected to the T input of a positive edge triggered T flip flop 66. AND gate 64 gates the output of NAND gate 48 with .phi..sub.2 to reduce the possibility of "glitches" or other transients causing flip flop 66 to change state. The Q output of flip flop 66 is connected to an input of a two-input NOR gate 68, while the Q output of the flip flop is connected to an input of a two-input NOR gate 70. The other input of each of NOR gates 68 and 70 are connected in common and to the output of an inverter 72. The input of inverter 72 is connected to .phi..sub.1.
The Q output of flip flop 66 is also connected to the input of an inverter 74, the output of which is the output signal of limiter circuit 10 (V.sub.out).
The operation of the presently preferred exemplary embodiment shown in FIG. 1 may be better understood by observing the timing diagram shown in FIG. 3. V.sub.in is sampled during the interval when .phi..sub.2 is high, and is stored on capacitors 18 and 26. Depending upon the level of the output of T-flip flop 66, either the (non-inverted) signal stored on capacitor 18 or the (inverted) signal stored on capacitor 26 is selected and connected to summing node A. Hysteresis is provided by controlling when the various MOSFET switching elements are switched in relation to one another.
V.sub.lim is summed with the signal selected by one of MOSFET switching elements 32 and 34 at summing node A. When .phi..sub.2 is high (and thus, .phi..sub.1 is low), V.sub.lim is applied to and stored by capacitor 38. Simultaneously, V.sub.in is applied to capacitors 18 and 26 when .phi..sub.2 is high. As is shown in FIG. 3, .phi..sub.3 and .phi..sub.4 may be high ony when .phi..sub.2 is low, so that V.sub.in is never applied directly to summing node A, nor is V.sub.lim ever directly applied to capacitors 18 and 26.
It will be understood that when .phi..sub.2 is high, the output V.sub.comp of comparator 36 goes to an unknown (undefined) level. NAND gates 46, 52 and 48, inverters 44 and 63 and flip flop 50 serve to propagate V.sub.comp through to the input of NAND gate 64 only when V.sub.comp assumes a defined level (i.e. when .phi..sub.2 is low).
When .phi..sub.1 is high, switching elements 14, 16, 20 and 22 act as open circuits, and switching element 24 acts as a closed circuit. Thus, one of the signal levels stored on capacitor 18 and capacitor 26 (the latter available from connection 30 of capacitor 26) is applied to summing node A when one of .phi..sub.3 or .phi..sub.4 is high. During this time, connection 28 of capacitor 26 is connected to ground by switching element 24. Also during this time, V.sub.lim (stored on capacitor 38) is subtracted from the selected one of the voltages stored on capacitors 18 and 26.
.phi..sub.3 is high only when .phi..sub.1 is high and V.sub.out is low. When .phi..sub.3 is high, V.sub.in -V.sub.lim is applied to input 40 of comparator 36, causing V.sub.comp to be low only when V.sub.in >V.sub.lim. Likewise, .phi..sub.4 is high only when V.sub.out is high and .phi..sub.1, is high. When .phi..sub.4 is high, -V.sub.in -V.sub.lim is applied to input 40 of comparator 36, so that V.sub.comp will be low only if V.sub.in <-V.sub.lim (i.e. V.sub.in is inverted and compared with positive V.sub.lim). V.sub.out changes state only when V.sub.comp is low and a leading edge of .phi..sub.2 occurs.
Because flip flop 66 is triggered by the positive edge of the output NAND gate 64, flip flop 66 will change state the next time .phi..sub.2 is high and the output of NAND gate 48 is high. When flip flop 66 changes state, the opposite one of .phi..sub.3 and .phi..sub.4 than the one high in the previous state is made high (as gated by .phi..sub.1). In this way, the signal level stored on a different one of capacitors 18 and 26 is applied to summing node A. A search for the next "window excursion" is thus carried out.
As is well known, mismatches in the input circuit of comparator 36 may result in a non-zero input offset voltage. Input offset voltage (V.sub.off) is the voltage which must be applied to lead 40 of comparator 36 to cause the comparator to sense that equal signal levels applied to leads 40 and 42 are exactly equal. As is well known, V.sub.off has, in general, an unknown value which fluctuates with several factors (such as temperature, power supply voltage, etc.). To compensate for this non-zero input offset voltage, a MOSFET switching element 72 is connected between the output of comparator 36 and the input 40 of the comparator. Switching element 72 is triggered by .phi..sub.2. Thus, V.sub.c (the voltage across capacitor 38) is in fact V.sub.lim -V.sub.off (where V.sub.off is the non-zero input offset voltage of comparator 36). Comparator 36 is compensated for a non-zero V.sub.off, resulting in more accurate operation.
The limiter circuit 10 shown in FIG. 1 may be fabricated on a single integrated circuit chip. In the preferred embodiment, switched capacitor techniques are used to implement the switching elements (14, 16, 20, 22, 24, 32, 34 and 72) and capacitors (18, 26 and 38).
Although only one exemplary embodiment has been described in detail above, those skilled in the art will appreciate that many variations and modifications may be made in this exemplary embodiment without departing from the novel and advantage features of this invention. For instance, although switching elements 14, 16, 20 22, 24, 32, 34 and 72 are shown as simple N-MOSFETs, they can each comprise a transmission gate having both an n-channel and a p-channel switch in order to increase the dynamic range (signal handling capability) of limiter 10 (of course, the p-channel switches would be controlled by the inverse of the corresponding n-channel switch control signals). Likewise, while the circuitry used in the preferred embodiment for producing .phi..sub.1, .phi..sub.2, .phi..sub.3, and .phi..sub.4 is implemented by CMOS digital logic elements, it would be understood that many other implementations (such as a transmission gate and capacitor or a programmed microprocessor implementation) are possible. Moreover, capacitor 38 could be used to store the level of V.sub.in -V.sub.off (or -V.sub.in -V.sub.off) rather than V.sub.lim (provided that the arrangement of the various switching elements was changed to accommodate such a configuration). Also, V.sub.lim could be made variable and applied at different levels depending upon the current limiter output, thus increasing the amount of hysteresis control. In addition to double poly, poly-to-diffusion or metal-to-diffusion capacitors could be used with care taken as to the extra stray capacitance associated with such structures. Accordingly, these and all other such variations and modifications are intended to be included within the scope of the following claims.