Liquid Phase Epitaxial Growth Method for Producing a III-V Group Compound Semiconductor

1. Field of the Invention

The present invention relates to a method of growing a III-V group compound semiconductor by using liquid phase epitaxial growth, and in particular, to liquid phase epitaxial growth of lattice matched aluminum-indium-arsenide (Al.sub.x In.sub.1-x As) crystal and aluminum-gallium-indium-arsenide (Al.sub.x Ga.sub.y In.sub.1-x-y As) crystal onto indium phosphide (InP) crystal.

2. Description of Prior Art

The aluminum-indium-arsenide compound (Al.sub.x In.sub.1-x As) crystal realizes the lattice matching of the indium phosphide compound (InP) crystal, when x=0.48 and its forbidden band gap is about 1.45 eV which is larger than that (about 1.35 eV) of InP.

Therefore, when the Al.sub.0.48 In.sub.0.52 As crystal is used in place of the conventional InP crystal, or together therewith, as the carrier confining layer of a semiconductor light emitting device (where the InP crystal is used as a substrate and, for example, the indium-gallium-arsenic-phosphide (InGaAsP) or indium-gallium-arsenide (InGaAs) crystal is used as an active layer) or as the window layer of a semiconductor photo detector device (where these crystals are used as the photo absorbing layer), it is expected that the performance of these photo semiconductor devices will improve.

Moreover, the AlInAs has a Schottky barrier height which is larger than that of, for example, InP or InGaAs, which suggest the possibility of its application as a Schottky gate field effect transistor, etc.

Meanwhile, an aluminum-gallium-indium-arsenide compound (Al.sub.x Ga.sub.y In.sub.1-x-y As) crystal is capable of realizing lattice matching to the InP crystal, when it is formed of a composition having the requirements: 0<x<0.48, 0<y<0.47; and its forbidden band gap is from about 0.74 to 1.45 eV.

This forbidden band gap is wider than that of about 0.74 to 1.35 eV for a composition which realizes lattice matching between the InGaAsP crystal and InP crystal; and accordingly, the Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As crystals have been anticipated as useful for wide application. For example, a light emitting device which emits the light in the wavelength of 0.85 .mu.m to 1.68 .mu.m or a photo detector device having photo sensitivity within this range may be obtained by combining Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As.

In regard to the hetero epitaxial growth of the Al.sub.0.48 In.sub.0.52 As crystal on the InP crystal plane, an example using molecular beam epitaxial growth method has been already proposed. Also, the liquid phase epitaxial growth method was proposed by an inventor of this application in the Appl. Phys. Lett., Vol. 41, No. 2, pages 194-6 (1982). In addition, liquid phase epitaxial growth of Al.sub.x Ga.sub.y In.sub.1-x-y As crystal on the InP crystal plane is also proposed by an inventor of this application in the J. Crystal Growth, Vol. 54, page 232 (1981). In these examples of the epitaxial growth on the InP crystal of the AlInAs or GaInAs crystals, the crystal is grown on the (100) plane of InP crystal. However, when these crystals, particularly when AlInAs is formed by the liquid phase epitaxial growth on the (100) crystal plane of InP, many crystal defects reaching the surface of AlInAs layer are generated, which can be seen in a microphotograph.

The cause of such crystal defects believed to be because of the following: Intrinsically, a three-element liquid of Al-In-As or four-element liquid of Al-Ga-In-As which are growth liquids of these crystals is not equilibrated with the two-element solid phase InP crystal. Moreover, it is difficult to super cool these growth liquids, and therefore, the InP crystal is easily soluble into these growth liquids. On the other hand, the atomic fraction of Al, X.sub.Al.sup.l, in these growth liquids is usually as small as 5.times.10.sup.-4 to 8.times.10.sup.-4 ; and the AlInAs or AlGaInAs crystal shows a low crystal growth rate, particularly when the composition ratio of Al is large. For example, about three minutes is required for liquid phase growth of 0.1 .mu.m of the AlInAs at a temperature of 780.degree. C.

Therefore, a crystal such as AlInAs gradually increases its thickness after the InP crystal is placed in contact with these growth liquids, and the InP crystal dissolves into the liquid. In particular, a deflective area such as a dislocated part quickly dissolves, which expands the defective area, thereby causing many defects to occur when the AlInAs or AlGaInAs crystals are grown on the InP crystal.

It is believed that raising, for example, the growth temperature, is a means for promoting crystal growth of AlInAs, etc. However, if a growth temperature is increased, decomposition of phosphorus (P) from the InP crystal is accelerated and defects of the AlInAs crystal are further increased.

It is an object of the present invention to provide a method of manufacturing an Al.sub.x In.sub.1-x As crystal or Al.sub.x Ga.sub.y In.sub.1-x-y As crystal using lattice matching to the InP crystal by the liquid phase epitaxial growth method, without generation of aforementiond crystal defects.

The object of this invention can be attained by the liquid phase epitaxial growth method wherein an Al.sub.x In.sub.1-x As crystal or Al.sub.x Ga.sub.y In.sub.1-x-y As crystal is grown on the crystal plane (111)A of the III-V group compound crystal formed on the (111)A crystal plane of the InP crystal or on said InP crystal. However, as explained above, the (111)A crystal plane may be replaced with any of the InP crystal used as a substrate or the III-V group compound crystal epitaxially grown on said substrate.

The (111)A plane of a crystal such as InP is chemically very stable when compared to, for example, the (100) plane or (111)B plane, etc. This is understood, because its etching speed is low, for example, when compared to other crystals. In this invention, when the growth liquid of Al-In-As or Al-Ga-In-As is in contact with the (111)A crystal plane, any melt-back does not occur.

The present invention will become more aparent from the description of the preferred embodiments set forth below, with reference to the accompanying drawings, wherein:

FIG. 1 shows lattice constants of Al.sub.x In.sub.1-x As layers grown on (111)A and (100) InP substrates,

FIG. 2 shows lattice constants of Al.sub.x Ga.sub.y In.sub.1-x-y As layers grown on (111)A and (100) InP substrates,

FIG. 3 shows solution composition for LPE growth of lattice-matched Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y layers with various compositions,

FIG. 4 shows a typical PL spectrum of an Al.sub.x Ga.sub.y In.sub.1-x-y As layer,

FIG. 5 shows the energy gap of Al.sub.x In.sub.1-x As grown on InP (111)A and (100) substrate as a function of X.sub.Al.sup.l,

FIG. 6 shows the energy gap of lattic-matched (111)A-oriented Al.sub.x Ga.sub.y In.sub.1-x-y As layers as a function of X.sub.Al.sup.l at 685.degree. C. and 790.degree. C.

FIGS. 7(a) and 7(b) show typical surfaces of Al.sub.x In.sub.1-x As grown on (100) InP and (111)A InP,

FIGS. 8(a) and 8(b) show typical surfaces of Al.sub.x In.sub.1-x As grown on (100) InP and (111)A InP,

FIG. 9 shows layer thickness of lattice-matched Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As grown on (111)A InP,

FIG. 10 shows layer thickness of Al.sub.x In.sub.1-x As grown for 1 min. as a function of the starting growth temperature,

FIG. 11 shows an AlGaInAs/AlInAs/AlGaInAs/(111)A InP heterostructure,

FIG. 12 shows an InGaAs/AlInAs/(111)A InP heterostructure,

FIG. 13 shows a multilayer structure consisting of AlInAs and AlGaInAs grown on (111)A InP,

FIG. 14 shows an O.sub.2.sup.+ /SIMS depth profiling measurement of .sup.71 Ga in the multilayer structure wafer consisting of AlInAs and AlGaInAs, and

FIG. 15 is a microphotograph indicating the surface condition of the crystal of the present invention.

Liquid phase epitaxial (LPE) growth conditions for lattice-matching are described below:

Al.sub.x In.sub.1-x As and Al.sub.x Ga.sub.y In.sub.1-x-y As epitaxial layers were grown onto both InP (111)A and (100) substrates by the LPE method. The (100) substrate was used as a control sample for comparison. The solution compositions for the growth were determined on the basis of the previously calculated phase diagrams. These values are listed in Tables I and II. The experimental apparatus consisted of a horizontal furnace system and a conventional sliding graphite boat, as reported previously. Pd-purified H.sub.2 was flowed through the fused silica tube set in the furnace. The materials used were semiconductor grade Al, In, GaAs and InAs. An AlIn mother alloy, which contained 0.1 atomic percent (a/o) Al, was used as the Al source, because it was very difficult to dissolve Al into In melts directly at the growth temperatures. This is because of the miscibility gap in the liquid state of the Al and In binary system.

At the start of the growth runs, the furnace was heated rapidly to 30.degree.-40.degree. C. above the starting growth temperature, and the growth solution was held there for about 30 min. The growth solution was then cooled with a constant cooling rate of 0.5.degree. C./min. Prior to growth, the thermally damaged surface of the InP substrates was removed using an undersaturated In+P solution.

For the growth of Al.sub.x In.sub.1-x As, the temperatures of 685.degree., 770.degree. and 790.degree. C. were respectively used as the starting growth temperature. The exact amount of supercooling was not clear because of the lack of an experimental phase diagram, but is is assured that the epitaxial layers were grown from supercooled solutions. When the growth temperature interval was 9.degree. C., the thickness of epitaxial layers grown on InP (111)A substrates was 0.1 and 0.5 .mu.m for the starting growth temperatures of 685.degree. and 790.degree. C., respectively.

Lattice constants of these layers were measured by a double crystal x-ray diffraction technique. The measured results are listed in Table I.

FIG. 1 shows the lattice constants of Al.sub.x In.sub.1-x As epitaxial layers grown on InP (111)A substrates starting from 685.degree., 770.degree., and 790.degree. C. as a function of X.sub.al.sup.l, wherein X.sub.i.sup.l represents the atomic fraction of the element i in the solution. The broken line represents the lattice constant of InP. FIG. 1 also shows the previously determined lattice constant of Al.sub.x In.sub.1-x As layers grown on InP (100) substrates in the above-noted publications. The starting growth temperature for the InP (100) substrates was between 790.degree. and 770.degree. C. When Al.sub.x In.sub.1-x As layers were grown from solutions with the same composition, the lattice constant of a layer grown on the (111)A face is larger than that of a layer grown on the (100) face. The solution compositions for the growth of lattice-matched Al.sub.0.48 In.sub.0.52 As on InP can be determined from FIG. 1.

For the growth of Al.sub.x Ga.sub.y In.sub.1-x-y As, the temperatures of 685.degree. and 790.degree. C. were respectively used as the starting growth temperature. The quaternary epitaxial layers were grown on both InP (111)A and (100) substrates. Lattice constants of these layers were also determined from the (400) and (333) CuK.alpha..sub.1 reflections by using the double crystal x-ray diffraction technique. The precise diffraction angle of the layers was determined by using the substrate reflection as an internal standard. The results are listed in Table II.

FIG. 2 shows the lattice constant of Al.sub.x Ga.sub.y In.sub.1-x-y As layers grown on InP (111)A and (100) substrates starting at 685.degree. and 790.degree. C. The growth solutions containing X.sub.Al.sup.l =0.00012 and 0.00015 at 685.degree. C., and X.sub.Al.sup.l =0.0003, 0.0004, 0.0005, and 0.0006 at 790.degree. C. were used for the (111)A face. The growth solution with X.sub.Al.sup.l =0.0005 were used for the (100) face. When Al.sub.x Ga.sub.y In.sub.1-x-y As layers were grown from solutions with the same composition, the lattice constant of a layer grown on the (111)A face is also larger than that of a layer grown on the (100) face. The solution compositions for the growth of lattice-matched Al.sub.x Ga.sub.y In.sub.1-x-y As on InP can be determined from FIG. 2.

FIG. 3 shows solution compositions, X.sub.Ga.sup.l, X.sub.As.sup.l, and X.sub.Al.sup.l, required for the LPE growth of lattice-matched Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As layers with various compositions. These data were derived from FIGS. 1 and 2 and the calculated liquidus isotherms. The starting growth temperatures of 685.degree. and 790.degree. C. were used. As shown in FIG. 3, X.sub.Ga.sup.l and X.sub.As.sup.l decrease as X.sub.Al.sup.l increases. When growth solutions have the same X.sub.Al.sup.l, X.sub.Ga.sup.l is smaller for the (100) face than for the (111)A face. The data for X.sub.Ga.sup.l =0.0 gives the solution compositions for the growth of lattice-matched Al.sub.0.48 In.sub.0.52 As on InP.

The energy gaps of lattice-matched alloys are discussed below:

The energy gap of undoped Al.sub.x In.sub.1-x As and Al.sub.x Ga.sub.y In.sub.1-x-y As layers were determined by photoluminescence (PL) measurements at 300 and 77 K. A cw 200-mW Ar ion laser at 5145 .ANG. was used as the optical pumping source. The laser light was chopped at a frequenc of 200 Hz and focused on the sample to a spot about 0.5 mm in diameter. For the PL measurements of longer wavelengths than 0.9 .mu.m, a JASCO CT-50 monochromator with a PbS detector cooled at 77 K. and a PAR HR-8 lock-in amplifier were used. For the PL measurements of shorter wavelengths than 0.9 .mu.m, a NARUMI RM-21 monochromator with a Si photodiode (HTV S1336) at room temperature and a NF LI-573 lock-in amplifier were used. The measured results are listed in Tables I and II.

A typical PL spectrum of an Al.sub.x Ga.sub.y In.sub.1-x-y As layer is shown in FIG. 6. The spectrum was measured at 300 K. The peak wavelength is 1.028 .mu.m. The thickness and lattice constant of the quaternary layer are 0.5 .mu.m and 5.873 .ANG., respectively. This layer was grown on (111)A InP starting from 790.degree. C. at a constant cooling rate of 0.5.degree. C./min. The half-width of the PL spectrum as shown in FIG. 4 is 57 meV, and this value is comparable to the half-width of the PL spectrum of In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y layers whose thickness was 1 .mu.m. This means that the composition variation in this Al.sub.x Ga.sub.y In.sub.1-x-y As epitaxial layer is not large.

FIG. 5 shows the energy gap of Al.sub.x In.sub.1-x As as a function of X.sub.Al.sup.l. The energy gap of Al.sub.x In.sub.1-x As epitaxial layers grown on InP (111)A and (100) substrates was measured at 300 and 77 K. The starting growth temperature was 770.degree. C. for the (111)A face, and it was between 790.degree. and 770.degree. C. for the (100) face. The energy gap of lattice-matched Al.sub.0.48 In.sub.0.52 As was measured to be 1.44 eV. The energy gap increases gradually with X.sub.al.sup.l for both faces. The energy shift between the energy gaps at 300.degree. and 77.degree. K. was found to be 0.06 eV.

FIG. 6 shows the energy gap of lattice-matched (111)A oriented Al.sub.x Ga.sub.y In.sub.1-x-y As epitaxial layers as a function of X.sub.Al.sup.l at 685.degree. and 790.degree. C. The energy gap was measured at 300.degree. K. The energy gap varies abruptly with increasing X.sub.Al.sup.l in the range of the wider energy gap than 0.8 eV. The terminal value at X.sub.Al.sup.l =0.0 corresponds to the value of In.sub.0.53 Ga.sub.0.47 As, and the terminal value at X.sub.Al.sup.l =0.00025 and 0.00086 correspond to that of Al.sub.0.48 In.sub.0.52 As for the two different growth temperatures. From the information presented in FIGS. 3 and 8, the LPE growth conditions for lattice-matched Al.sub.x Ga.sub.y In.sub.1-x-y As layers with desired energy gaps can be easily determined.

The Hall measurements of unintentionally doped Al.sub.0.48 In.sub.0.52 As layers are now discussed;

The Hall measurements of unintentionally doped Al.sub.0.48 In.sub.0.52 As layers were performed at room temperature, and the carrier concentration, n, and Hall mobility, .mu., were derived from the measurements. Two samples of 0.5 .mu.m thick Al.sub.0.48 In.sub.0.52 As layers grown on Fe-doped semi-insulating (10.sup.6 .OMEGA.-cm) (111)A InP were used for the Hall measurements. In this growth, any baking methods of growth solutions described previously have not been employed, in order to obtain high purity LPE Al.sub.0.48 In.sub.0.52 As layers. The results of the Hall measurements were .mu.=4549 cm.sup.2 /Vsec at n=4.7.times.10.sup.15 cm.sup.-3 and .mu.=4466 cm.sup.2 /Vsec at n=5.9.times.10.sup.15 cm.sup.-3. These Hall mobilities are the highest of those reported until now, and these carrier concentrations are the lowest of those reported until now. The room temperature Hall mobility of Al.sub.0.48 In0.52As layers grown by molecular beam epitaxy (MBE) was reported by Cheng et al. According to their data, the Hall mobility was lower than 800 cm.sup.2 /Vsec at n=1.times.10.sup.17 cm.sup.-3. The Hall mobility and carrier concentration of undoped Al.sub.0.48 In.sub.0.52 As has not been reported. However, the Hall mobilities of Al.sub.0.48 In0.52As grown by LPE are obviously higher than those of Al.sub.0.48 In.sub.0.52 As grown by MBE. High purity Al.sub.0.48 In.sub.0.52 As layers with carrier concentrations of 5.times.10.sup.15 cm.sup.-3 can be easily obtained by LPE without special purification methods, such as the baking technique.

The substrate orientation dependence of surface morphology will now be discussed:

The surface morphology of Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As depends strongly on the orientation of the substrates. For the starting growth temperature of 685.degree. C., the typical surface morphologies of Al.sub.x In.sub.1-x As grown on InP (100) and (111)A substrates are shown in FIGS. 7a and 7b, respectively. As shown in FIG. 7a, only small growth islands appear on the surface of the (100) substrate, and it is very difficult to grow an Al.sub.x In.sub.1-x As epitaxial layer over the entire (100) surface. However, it is easy to grow an Al.sub.x In.sub.1-x As epitaxial layer on the entire surface of the (111)A substrate as shown in FIG. 7b.

For the high starting growth temperature of 790.degree. C., an Al.sub.x In.sub.1-x As epitaxial layer can be grown all over the surface of the (100) InP substrate as shown in FIG. 8a. However, many surface defects often appear on the (100) surface. In order to obtain Al.sub.x In.sub.1-x As epitaxial layers without surface defects, the epitaxial layers must be grown on the (111)A substrates. FIG. 8b shows the typical surface of Al.sub.x In.sub.1-x As layer grown on (111)A InP starting from 790.degree. C. The (111)A surface is very smooth, and such surface defects as shown in FIG. 8a are not observed. For the growth of Al.sub.x Ga.sub.y In.sub.1-x-y As, epitaxial layers with smooth surface can also be easily grown on the (111)A substrates.

The reason for surface defects which appear easily on the (100) surface of Al.sub.x In.sub.1-x As layers is related to dissolution of the InP (100) substrates. When Al.sub.x In.sub.1-x As layers were completely removed by using a selective etchant of HF:HNO.sub.3 =1:1, many small holes were observed on the surface of the InP (100) substrates. However, such holes were not observed on the surface of the InP (111)A substrates. As reported previously, the (111)A face is more stable to dissolution than the (100) face. Therefore, the surface defects due to dissolution of the substrates appear more easily on the (100) face than on the (111)A face.

The growth rate of Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As is discussed below:

FIG. 9 shows the layer thickness of lattice-matched Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As as a function of X.sub.Al.sup.l. These layers were grown on InP (111)A substrates by the ramp cooling method. A constant cooling rate of 0.5.degree. C./min was used. The starting growth temperatures were 685.degree. and 790.degree. C., and the cooled temperature interval was 9.degree. C. As shown in FIG. 9, the layer thickness of Al.sub.x Ga.sub.y In.sub.1-x-y As increases as X.sub.Al.sup.l decreases. This means that the layer thickness of Al.sub.x Ga.sub.y In.sub.1-x-y As increases as x (Al content in the alloy) decreases. The growth rate of Al.sub.0.48 In.sub.0.52 As ternary layers is the smallest of the Al-Ga-In-As system. The growth rate of Al.sub.x Ga.sub.y In.sub.1-x-y As increases rapidly when X.sub.Al.sup.l becomes smaller than 0.0005.

FIG. 10 shows the layer thickness of Al.sub.x In.sub.1-x As grown for 1 min as a function of the starting growth temperature. The growth was performed on (111)A InP by the ramp cooling method. A constant cooling rate of 0.5.degree. C./min was used. As shown in FIG. 10, the layer thickness per 1 min was only 60 .ANG. at 685.degree. C. and 240 .ANG. at 790.degree. C. Therefore, very thin layers can be grown under good control by using the ordinary LPE growth apparatus with a sliding graphite boat. It is expected that a 40 .ANG. thick layer can be grown at 790.degree. C. for the growth time of 10 sec.

The growth of heterostructures is now described:

In order to fabricate devices using Al.sub.0.48 In.sub.0.52 As or Al.sub.x Ga.sub.y In.sub.1-x-y As, it is necessary to obtain heterostructures. Al.sub.x Ga.sub.y In.sub.1-x-y As can be grown on Al.sub.0.48 In.sub.0.52 As without dissolution. Al.sub.0.48 In.sub.0.52 As can also be grown on Al.sub.x Ga.sub.y In.sub.1-x-y As, but the dissolution of Al.sub.0.48 In.sub.0.52 As into the Al-Ga-In-As growth solution becomes more severe as the Al content in the quaternary alloy decreases. FIG. 11 shows the Al.sub.x Ga.sub.y In.sub.1-x-y As/Al.sub.0.48 In.sub.0.52 As/Al.sub.x Ga.sub.y In.sub.1-x-As heterostructure grown on (111)A InP. The starting growth temperature was 790.degree. C. The wavelength of the Al.sub.x Ga.sub.y In.sub.1-x-y As layers was 1.0 .mu.m at 300 K. In.sub.0.53 Ga.sub.0.47 As can be grown on Al.sub.0.48 In.sub.0.52 As as shown in FIG. 12. These layers were grown on (111)A InP. In.sub.0.53 Ga.sub.0.47 As was grown on Al.sub.0.48 In.sub. 0.52 As at 650.degree. C. by the ramp cooling method. In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y can also be grown on Al.sub.0.48 In.sub.0.52 As, but the growth of Al.sub.0.48 In.sub.0.52 As on In.sub.0.53 Ga.sub.0.47 As was more difficult.

FIG. 13 shows a multilayer structure consisting of Al.sub.0.48 In.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As grown on (111)A InP. The thickness of the Al.sub.0.48 in.sub.0.52 As and Al.sub.x Ga.sub.y In.sub.1-x-y As layers were about 0.05 .mu.m and 0.1 .mu.m, respectively. The growth was started from 781.degree. C. at a constant cooling rate of 0.5.degree. C./min, and the growth time of each layer was 1 min. Since a slightly super-cooled (2.degree.-3.degree. C.) solution was used for the growth of Al.sub.0.48 IN.sub.0.52 As layers, the growth rate was higher than that shown in FIG. 10. The wavelength of the Al.sub.x Ga.sub.y In.sub.1-x-y As layers was 0.98 .mu.m at 300.degree. K. FIG. 14 shows the O.sub.2.sup.+ /SIMS depth profile of .sup.71 Ca from the surface of this sample. As shown in FIG. 14, this sample has 11 layers. The abruptness of the heterointerfaces cannot be accurately known from FIG. 14 because of the limit of resolution of SIMS depth profiling measurements. A thinner multilayer structure can be grown by using a shorter growth time.

This invention is explained concretely by the way of the first embodiment for growth of the Al.sub.x In.sub.1-x As crystal, the second embodiment for growth of the Al.sub.x Ga.sub.y In.sub.1-x-y As and the third embodiment for growth of the Al.sub.x Ga.sub.y In.sub.1-x-y As crystal and then the Al.sub.x In.sub.1-x As crystal. The following embodiments illustrate, but in no way limit the present invention:

A slide boat for ordinary liquid phase epitaxial growth accommodating the InP substrate, melt-back liquid (explained later) and raw material crystal of growth liquid is placed within a quartz reaction pipe through which the pure hydrogen (H.sub.2) is flowed. However, the upper surface of InP substrate is prepared as the (111)A crystal plane and is protected by the InP cover plate.

The internal temperature is raised up to 810.degree. C. and is held in such condition for 30 minutes. Thereafter, the temperature is lowered at the cooling rate of 0.3.degree. C./min and the meltback of substrate and growth of the Al.sub.x In.sub.1-x As crystal are performed as follows:

(a) Meltback of InP substrate

Liquid composition:

In:InP=2.1844 g:0.0695 g

Temperature: 770.degree. C.

Time: About 10 seconds

(b) Growth of AlInAs crystal

Liquid composition:

AlIn:InAs:In=4.0082 g:1.2207 g 0.01085 g

Where, AlIn is a solid solution, containing Al of 0.1 wt%, namely 0.0235 wt% in In. Since Al does not easily dissolve and mix uniformly into discrete In (because of monotetic reaction, discussed above), an AlIn mother alloy is used.

Atomic fraction of liquid:

X.sub.Al.sup.l =0.00073

X.sub.In.sup.l =0.86527

X.sub.As.sup.l =0.13400

Temperature: About 770.degree..fwdarw.764.degree. C.

Growth thickness: About 0.46 .mu.m

When growth of crystal is completed, temperature is rapidly cooled down to room temperature.

The surface condition of AlInAs crystal grown by this embodiment is shown in a microphotograph (125 times) of FIG. 15. As is clear from this figure, according to this invention, crystal defects as shown in the prior art shown in FIG. 7a do not appear and the surface condition is excellent.

As a result of measuring the lattice constant of the AlInAs crystal in this embodiment by the X-ray analysis method, lattice mismatching ratio .DELTA.a/a to the InP crystal was as low as 0.3.times.10.sup.-4 or less and the peak wavelength of photoluminescence was confirmed as about 0.855 .mu.m, the forbidden band was 1.45 eV and the composition was Al.sub.0.48 In.sub.0.52 As.

As in the embodiment of said AlInAs crystal growth, the liquid phase growth of the Al.sub.x Ga.sub.y In.sub.1-x-y As crystal is carried out. In this embodiment, a cooling speed is set to 0.5.degree. C./min.

(a) Meltback of InP substrate:

Liquid composition:

In:InP=2.3207 g:0.07045 g

Temperature: 790.degree. C.

Time: About 10 seconds

(b) AlGaInAs crystal growth

Liquid composition:

AlIn:InAs:GaAs:In=2.74588 g:1.47505 g:0.211630 g:1.98785 g

AlIn is also used here because of the same reason as explained above.

Atomic fraction of liquid:

X.sub.Al.sup.l =0.004

X.sub.Ga.sup.l =0.0250

X.sub.In.sup.l =0.8196

X.sub.As.sup.l =0.1550

Temperature: About 790.degree..fwdarw.781.degree. C.

Growth thickness: About 1.92 .mu.m

As in the case of the AlInAs crystal surface in the above embodiment, no crystal defects were observed on the AlGaInAs crystal surface of this embodiment. The lattice matching was also good and the peak wavelength of photo luminescence was about 1.228 .mu.m.

The liquid phase growth is carried out as in embodiments (i) and (ii), above. The cooling speed in this embodiment is also set to 0.5.degree. C./min as in embodiment (ii).

(a) Meltback of InP substrate

Liquid composition:

In:InP=2.22795 g:0.0669 g

Temperature: 790.degree. C.

Time: About 10 seconds

(b) AlGaInAs crystal growth

Liquid composition:

AlIn:InAs:GaAs:In=5.4489 g:2.61379 g:0.1386 g:2.0724 g

AlIn is used for the same reason as explained above.

Atomic fraction of liquid:

X.sub.Al.sup.l =0.0005

X.sub.Ga.sup.l =0.0100

X.sub.In.sup.l =0.8345

X.sub.As.sup.l =0.1550

Temperature: About 790.degree..fwdarw.781.degree. C.

Growth thickness: About 0.6 .mu.m

Photo luminescence peak wavelength: About 1.0 .mu.m

(c) AlInAs crystal growth

Liquid composition:

AlIn:InAs:In=5.79005 g:2.3487 g:1.0248 g

AlIn is used for the same reason as explained above.

Temperature: 781.degree..fwdarw.773.degree. C.

Growth thickness: About 0.5 .mu.m

In regard to the AlGaInAs-AlInAs crystal obtained by this embodiment, excellent surface condition and lattice matching are obtained as in embodiment (i).

As in embodiment (i) explained above, good results have been obtained by carrying out the processes explained below by the liquid phase expitaxial growth method wherein the InGaAsP crystal, for example, is grown on the InP substrate having the main plane of (111)A, and then the Al.sub.0.48 In.sub.0.52 As crystal or Al.sub.x Ga.sub.y In.sub.1-x-y As crystal is grown on such InGaAsP layer.

As explained above, according to this invention, the Al.sub.x In.sub.1-x-y As (x=0.48) crystal having a forbidden band which is very much larger than that of the material considered as the object of researches in semiconductor devices or the Al.sub.x Ga.sub.y In.sub.1-x-y As crystal having a wider and changeable forbidden band gap can be grown without any crystal defects by the liquid phase epitaxial growth method, through lattice matching to the InP which occupies the main part in the III-V group compound semiconductor.

In this invention, the crystal is grown in the (111)A plane and, therefore, it is adequate to select the (110) plane as the cleavage surface of laser. However, the resonant surface of laser can also be formed, since the parallel cleavage surface can be formed by selecting only the same cleavage direction.

Accordingly, a semiconductor light emitting device, photo detector device and various semiconductor devices, such as field effect transistor, can be formed easily by selecting and combining Al.sub.x In.sub.1-x As and Al.sub.x Ga.sub.y In.sub.1-x-y As together with InP, indium-gallium-arsenic/phosphide (InGaAsP) and indium-gallium-arsenide (InGaAs). In this sense this invention contributes much to development of the III-V group compound semiconductor device and the practical use thereof.