Method of and Circuit Arrangement for Reading and/or Writing an Integrated Semiconductor Storage With Storage Cells in MTL (I.sup.2 L) Technology

1. A method of reading and writing an integrated semiconductor store, said store having storage cells which consist of flip-flops with bipolar transistors in MTL technology, wherein line capacitances are discharged during or prior to a read and write operation, respectively, and a read/write circuit is provided, said method being characterized in that the current necessary for reading and/or writing the storage cells (C) is generated simply by discharging input capacitances (CE) of the non-selected storage cells and is fed directly to the selected storage cells (C) for reading and/or writing.

2. A method of reading and writing an integrated semiconductor store, as recited in claim 1, further characterized in that by a read and/or write signal the discharging of the bit line capacitances is initiated, and that the bit line discharge currents are used to read and/or write a selected storage cell of the respective bit line pair (BL0, BL1).

3. A method of reading and writing an integrated semiconductor store, as recited in claim 1 or claim 2, further characterized in that the discharge currents from bit lines and injector depletion layer capacitances charge injector diffusion capacitances of the selected storage cell (C), and that the discharging of these diffusion capacitances on the OFF state side (NPN transistor "OFF") is effected at a considerably higher speed than on the ON state side (NPN transistor "ON"), and that the read signal is the differential signal resulting from the charges on the input and output sides, which are discharged at different speeds.

4. A circuit arrangement for reading or writing information into an integrated semiconductor store having storage cells in MTL or I.sup.2 L technology, said circuit arrangement being characterized by two Schottky-clamped transistors (T46 and T49) with Schottky collector contacts (S46 and S49) connected to the bit lines (BL0 and BL1), the bases of the Schottky-clamped transistors (T46 and T49) are respectively connected to a read/write lines (WT1 and WT0), and the emitters are jointly connected to a bit selection line (BS).

5. In a solid state memory wherein reading or writing information into a selected memory cell is accomplished by utilizing the capacitively stored energy in a plurality of non-selected memory cells, said solid state memory including: a first potential source; a second potential source; first and second transistors of a first conductivity type, said first and second transistors each having an emitter, base and collector; resistance means connecting said base of said first transistor in common with said base of said second transistor to said first potential source; passive means connecting said collector of said first transistor in common with said collector of said second transistor to said second potential source; a first bit line connected to said emitter of said first transistor; a second bit line connected to said emitter of said second transistor; n word lines; n memory cells, each of said n memory cells being connected to said first and second bit lines and to a predetermined one of said n word lines, each of said n memory cells having first and second stable states of conductivity; each said memory cell comprising, third and fourth transistors of said first conductivity type, fifth and sixth transistors of a second conductivity type, said third, fourth, fifth and sixth transistors each having an emitter, base and collector, said emitter of said fifth transistor being connected to said first bit line, said emitter of said sixth transistor being connected to said second bit line, said base of fifth transistor, said emitter of said third transistors, said emitter of said fourth transistor and said base of said sixth transistor being connected in common to said predetermined one of said n word lines, said collector of said fifth transistor, said base of said third transistor and said collector of said fourth transistor being connected in common, said collector of said sixth transistor, said base of said fourth transistor and said collector of said third transistor being connected in common; and, read/write control means connected to said first and second bit lines and to said first and second transistors.

6. In a solid state memory wherein reading or writing information into a selected memory cell is accomplished by utilizing the capacitively stored energy in a plurality of non-selected memory cells, as recited in claim 5, wherein said read/write control means includes: a read/write control line; a write "1" control line; a write "0" control line; seventh and eighth transistors of said first conductivity type, said seventh and eighth transistors each having an emitter, base and collector, said base of said seventh transistor being connected to said write "1" control line, said base of said eighth transistor being connected to said write "0" control line, said emitter of said seventh transistor and said emitter of said eighth transistor being connected in common to said read/write control line; and, first and second Schottky diodes, said first Schottky diode being connected between said collector of said seventh transistor and said first bit line, and said eighth Schottky diode being connected between said collector of said eighth transistor and said second bit line.

7. In a solid-state memory wherein reading or writing information into a selected memory cell is accomplished by utilizing the capacitively stored energy in a plurality of non-selected memory cells, as recited in claim 6, wherein said read/write controls is connected to said base of said first transistor and said base of said second transistor by Schottky diode circuit means.

8. In a solid-state memory wherein reading or writing information into a selected memory cell is accomplished by utilizing the capacitively stored energy in a plurality of non-selected memory cells, as recited in claim 7, wherein said Schottky diode circuit means comprises serially connected third and fourth Schottky diodes.

9. In a solid-state memory wherein reading or writing information into a selected memory cell is accomplished by utilizing the capacitively stored energy in a plurality of non-selected memory cells, as recited in claim 8, wherein read/write sense amplifier means is connected to said first and second bit lines.

10. In a solid-state memory having an array of m.times.n memory cells, where m and n are respectively positive integers, said array of m.times.n memory cells having m columns of memory cells and n rows of memory cells, m pairs of bit lines, each of said m pairs of bit lines consisting of a first bit line and a second bit line, each of said m pairs of bit lines being associated with a predetermined one of said m columns of memory cells, n wordlines, each of said n wordlines being associated with a predetermined one of said n rows of memory cells, said solid state memory comprising: m.times.n memory cells, each said memory cell including first, second, third and fourth transistors, each of said transistors having an emitter, base and collector, said first and second transistors being PNP type transistors, said third and fourth transistors being NPN type transistors, said emitter of said first transistor being connected to a predetermined one of said first bit lines, said collector of said first transistor being connected to said base of said third transistor and said collector of said fourth transistor, said collector of said third transistor being connected to said base of said fourth transistor and said collector of said second transistor, said emitter of said second transistor being connected to a predetermined one of said second bit lines, said base of said first transistor, said base of said second transistor, said emitter of said third transistor and said emitter of said fourth transistor being connected in common to a predetermined one of said n word lines; m pairs of bit line switches, each pair of said m pairs of bit line switches consisting of a first bit line switch and a second bit line switch, each of said first bit line switches of said m pairs of bit line switches being connected between a predetermined one of said first bit lines of said m pairs of bit lines and a source of reference potential, each of said second bit line switches of said m pairs of bit line switches being connected between a predetermined one of said second bit lines of said m pairs of bit lines and said source of reference potential; m read/write amplifier and control circuit means, each of said m read/write amplifier and control circuit means being associated with a predetermined one of said m columns of memory cells, each of said m read/write amplifier and control circuit means being connected to a predetermined pair of said m pairs of bit lines, and each of said m read/write amplifier and control circuit means being connected to a predetermined pair of said m pairs of bit line switches.

11. In a solid-state memory, as recited in claim 10 wherein each of said bit line switches of said m pairs of bit line switches comprises a single transistor and each of said m read/write amplifier and control circuit means comprises two transistors and four Schottky diodes.

12. A method for reading information stored in a memory cell of a solid-state memory having a plurality of memory cells, each of said cells comprising bipolar transistors in merged transistor logic (MTL) technology, said method including the following steps: (a) select a memory cell to be read; (b) actuate bit line switches to discharge capacitively stored energy in bit lines and input capacitances of non-selected cells; and (c) utilize said capacitively discharged energy to read the information stored in said selected memory cell.

13. A method for writing information into a memory cell of a solid-state memory having a plurality of memory cells, each of said cells comprising bipolar transistors in Merged Transistor Logic (MTL) technology, said method including the following steps: (a) select a memory cell to be written into; (b) actuate bit line switches to discharge capacitively stored energy in bit lines and input capacitances of non-selected cells; and (c) utilize said capacitively discharged energy to write the information into said selected memory cell.

14. A method for reading information stored in a selected group of memory cells of a solid state memory having a plurality of groups of memory cells, each of said memory cells comprising bipolar transistors in merged transistor logic (MTL) technology, said method including the following steps: (a) select a group of memory cells to be read; (b) discharge capacitively stored energy in bit lines and non-selected groups of memory cells; and (c) utilize said capacitively discharged energy to read the information stored in said selected group of memory cells.

15. A method for writing information into a selected group of memory cells of a solid state memory having a plurality of groups of memory cells, each of said memory cells comprising bipolar transistors in merged transistor logic (MTL) technology, said method including the following steps: (a) select a group of memory cells to be written into; (b) discharge capacitively stored energy in bit lines and non-selected groups of memory cells; and (c) utilize said capacitively discharged energy to write the information into said selected group of memory cells.