Background of Invention
This invention relates to switched capacitor circuits or networks and more particularly to switched capacitor circuit replacements for resistors.
There is currently much interest in the simulation of electrical components such as resistors and inductors using switched capacitor circuits so that filter networks can be implemented in fully integrated circuit form. Floating and/or grounded switched capacitor resistors are generally described in the references Sampled Analog Filtering Using Switched Capacitors as Resistor Equivalents by J. T. Caves et al, IEEE Journal of Solid State Circuits, Vol. 12, No. 6, pp 592-599, December 1977; MOS Sampled Data Recursive Filters Using Switched Capacitor Integrators by B. J. Hosticka et al, IEEE Journal of Solid State Circuits, Vol. 12, No. 6, pp 600-608, December 1977; Switched Capacitor Filter Design Using the Bilinear z-Transform by G. C. Temes et al, IEEE Transactions on Circuits and Systems, Vol. 25, No. 12, pp 1039-1044, December 1978; and Derivation of Switched Capacitor Filters from Active-RC Prototypes by G. C. Temes, Electronics Letters, Vol. 14, No. 12, pp 361-362, June, 1978. A number of the previously existing switched capacitor resistors are susceptible to top and/or bottom plate parasitic capacitance effects.
An object of this invention is the provision of novel switched capacitor circuits for simulating bilinear resistors.
Another object is the provision of a switched capacitor bilinear resistor simulation circuit that may be connected so as to be relatively insensitive to both top and bottom plate parasitic capacitance effects associated with an integrated capacitor thereof.
Summary of Invention
In accordance with this invention, an integratable switched capacitor circuit for simulating a bilinear resistor across a pair of nodes comprises first means for establishing a negative capacitance between first and second terminals thereof that are connected to associated nodes, and second means for alternately-periodically connecting opposite sides of an integrated capacitor in synchronism to associated nodes and to a ground reference potential. Connection of one node to the output of a voltage source and the other node to a virtual ground point on the input of an amplifier renders the circuit generally insensitive to both top and bottom plate parasitic capacitance effects associated with the integrated capacitor.
Description of Drawing
This invention will be more fully understood from the following detailed description of preferred embodiments thereof, together with the drawing in which:
FIG. 1 is a schematic circuit diagram of the switched capacitor circuit 10 for simulating a floating bilinear resistor between the nodes or terminals 20 and 21;
FIG. 2 is a schematic circuit diagram of a floating negative impedance converter circuit for simulating a negative capacitor across the nodes 20A and 21A thereof;
FIG. 3 is a schematic circuit diagram of an integrator circuit 50 having the switched capacitor circuit 10 connected therein so as to be insensitive to both top and bottom plate parasitic capacitance effects associated with the integrated capacitor C1, the switch means 30 and 32 being shown in schematic form; and
FIG. 4 is a schematic circuit diagram of an alternate embodiment of this invention that is connected as a bilinear load resistor for an LC filter section 55.
Description of Preferred Embodiments
Referring now to FIG. 1, a switched capacitor circuit or network 10 for simulating a floating bilinear resistor across a pair of terminals or nodes 20 and 21 thereof comprises a capacitor C1, capacitor means 26, switch means 30 and 32, and a source 38 of timing control signals. In a preferred embodiment of this invention that is implemented in fully integrated circuit form, the capacitor C1 is an integrated capacitor having a positive capacitance C. The dot on C1 indicates the top plate thereof. The capacitor means 26, however, is a two terminal circuit providing a negative capacitance --C/2 between the terminals thereof.
The floating capacitor means 26 in FIG. 1 may, by way of example, comprise a pair of negative impedance converters 22 and 23 that are connected as illustrated in FIG. 2. The structure and operation of negative impedance converters is well known. The circuit in FIG. 2 comprises a plurality of capacitors C2-C6 that are connected in series between nodes 20A and 21A, and a pair of differential input operational amplifiers A1 and A2. The integrated capacitors C2-C5 are fabricated as matched pairs having capacitances C2=C3 and C4=C5. Since each of the converters essentially comprises C6, the capacitance thereof is C6=C/2 so that the impedance between nodes 20A and 21A corresponds to that of a capacitance -C/2 therebetween. In practice, one node (e.g., node 20A) is normally connected to ground or the output terminal of a voltage source. It is therefore possible to remove the left half of the circuit (including A1, C2 and C3) and obtain the same overall operation since the nodes 20A and 20B are then at the same potential. It is not necessary for the capacitor means 26 to exist as a unique physical integrated circuit structure in many applications since it can often be absorbed by a positive capacitance of larger magnitude that is connected in parallel with it as is described more fully hereinafter and illustrated in FIGS. 3 and 4.
Each of the switch means 30 and 32 in FIG. 1 comprises a pair of integrated MOS FET transistors, for example, that are connected in series between an associated one of the terminals 20 and 21 and a ground reference potential. The intermediate terminals 34 and 36 of the switch means are connected to opposite sides of C1. The gate electrodes of the transistors of each pair thereof are driven by different ones of the two-phase non-overlapping digital timing control signals .phi.1 and .phi.2 that are produced by the signal source 38. These timing signals are 180.degree. out of phase with respect to each other (as is indicated on the left side of FIG. 1) and preferably have a duty cycle of 50%. The switching frequency of the control signal is f.sub.s =1/T, where T is the period of a switching cycle. The switching frequency is greater than the Nyquist sampling rate.
Considering the operation of the circuit 10 in FIG. 1 irrespective of the characteristics of external circuits that may be connected to nodes 20 and 21 thereof, the switching transistors 30A and 32A conduct for connecting C1 across terminals 20 and 21 when the control signal .phi.1 is positive. This causes C1 to charge to an input voltage that is applied between the terminals 20 and 21. When the control signals .phi.1 and .phi.2 reverse polarity, transistors 30A and 32A are cutoff for disconnecting C1 from the nodes, and the other switching transistors conduct for connecting both sides of C1 to ground for discharging it. This operation of the switch means for alternately charging and discharging C1 causes the circuit 10 to simulate a floating resistor. Although the resistor simulated by this circuit 10 is susceptible to parasitic capacitance effects since both plates of the integrated capacitor C1 are periodically connected to floating nodes 20 and 21, it has the distinct advantage of being a truly floating resistor which, by taking account of the negative capacitor, is shown analytically hereinafter to be a bilinear resistor having a resistance R=T/C. If the circuit 10 is connected across the output of a network (not shown) having positive output capacitances Co then the means 26 may be absorbed into the network by merely reducing the output capacitances thereof to a value Co-C/2. The network and circuit 10 will still operate to perform these individual functions. The parasitic capacitance effects in the circuit 10 may be compensated by techniques described in published literature including Compensation For Parasitic Capacitances In Switched Capacitor Filters by G. C. Temes et al, Electronic Letters, vol. 15, no. 13, pp 377-379, June, 1979.
In an application where the node 20 in FIG. 1 is connected to a voltage source such as the output terminal of an integrated operational amplifier, the circuit 10 simulates a bilinear source resistor. In this application, the resultant switched capacitor circuit is insensitive to bottom plate parasitic capacitance effects associated with the integrated capacitor C1 since the bottom plate line 44 is switched between ground and the output of a voltage source having a very low output impedance which is not affected by the loading of the parasitic capacitance. The top plate parasitic capacitance of C1 is very small such that its effect on the operation of the circuit 10 is negligible. In many active filter applications, the other terminal 21 in FIG. 1 is connected to a virtual ground point at an input terminal of an integrated operational amplifier as is illustrated in FIG. 3. This switches the other plate of C1 between ground potentials; therefore no charge is transferred by the associated parasitic capacitances and eliminating the effects thereof. In such a filter, the resultant network is insensitive to both top and bottom plate parasitic capacitance effects associated with the integrated capacitor C1 since both sides of C1 are now switched between ground potentials or between ground and the output of a voltage source.
Referring now to FIG. 3, the integrator circuit 50 here comprises a switched capacitor circuit 10 and a differential input operational amplifier A3. This integrator is a building block for multiple feedback filters. The non-inverting input terminal of A3 is connected to ground for impressing a virtual ground on the inverting input terminal thereof that is connected to node 21. Also, the output terminal of A3 is connected to the other node 20. This renders the circuit 50 insensitive to both bottom and top plate capacitance effects associated with the integrated capacitor C1 since one terminal 44 is switched between ground and the output of a voltage source A3 and the other terminal 46 is switched between ground potentials. An integrated capacitor C7 is connected across A3 for integrating input signals on line 51. The integrator circuit is also insensitive to both top and bottom plate parasitic capacitance effects associated with C7 since the two plates thereof are connected to a virtual ground and the output of the voltage source A3. The circuit 10 is operative in this integrator circuit for simulating a truly floating bilinear resistor across C7 that may be used to adjust the Q of the circuit.
In many applications, the capacitor means 26 is connected directly across a capacitor such as C7 in FIG. 3. When the absolute value of the capacitance provided by means 26 is less than the capacitance of C7, then the capacitance means can be absorbed into the integrated capacitor C7 by merely reducing the positive capacitance of the latter by the absolute value of the negative capacitance. By way of example, if the capacitance of C7 is normally 3C, then this capacitor C7 is caused to perform the function of both the negative capacitor means 26 and the capacitor C7 by merely reducing the capacitance of the latter to a value 2.5C. This feature of applicant's invention greatly simplfies the resultant circuit structure.
It can be shown analytically that the resistor simulated by the circuit 10 in FIG. 1 is a bilinear resistor by consideration of the charge flow there. The general representation of the differential charge-voltage relationship for a bilinear resistor is known to be
where Q(z) is charge in the discrete time domain, T is the sampling period, z is the operator in the z domain, and V(z) is the discrete time voltage across the nodes 20 and 21.
The discrete time representations of differential charge in C1 and the negative capacitor means 26 are
and
so that the net differential charge is
Taking the z-transform of equation (4), the net differential charge-voltage relationship for the circuit 10 in the z-domain is determined to be ##EQU1## Comparison of equation (1) and (5) reveals that the simulated bilinear resistor has a resistance R=T/C.
Although this invention is described in relation to preferred embodiments thereof, variations and modifications will occur to those skilled in the art. By way of example, the absolute values or ratios of the capacitances of C1 and means 26 may be other than C and C/2. The resultant circuits still simulate floating resistors having different values of resistance although they may no longer be bilinear resistors. Also, the circuit may be implemented with other than MOS technology, with discrete components, and in other than integrated form, the switch means being mechanical relays or switches, for example. Further, the bilinear floating resistor simulation circuit 10 in FIG. 1 may be converted to a bilinear grounded resistor simulation circuit by grounding either terminal 20 or terminal 21. Alternatively, a simplified grounded bilinear resistor simulation circuit 10' is obtained by connecting both the node 20 and the bottom plate terminal 44 on the integrated capacitor C1 to ground as is illustrated in FIG. 4. The terminals 20' and 21 of this simulation circuit 10' are connected across the output of an LC filter section 55 which may be fully implemented in integrated circuit form with switched capacitor techniques that are available in the published literature. The output of the filter section may have a capacitance +C.sub.o that is to have a load impedance connected across it. This embodiment of the invention does not require a physical element 26 for providing a negative capacitance -C/2 since it is only necessary here to reduce the desired value of the output capacitance +C.sub.o for the filter by the value of the negative capacitance to obtain the desired operation for the simulation network 10' and the filter section 55. Also, the switched capacitor circuit 10 in FIG. 1 is a switched capacitor bilinear resistive voltage-controlled current source if terminal 20 is connected to a voltage source and terminal 21 is connected to a virtual ground point since it is responsive to an applied voltage from the voltage source for producing an output current corresponding to that for a bilinear resistor into the virtual ground node. Additionally, the network 10 in FIG. 1 simulates a negative bilinear resistor when the transistors 30A and 30B are driven by .phi.2 and .phi.1, respectively, so that the switch means 30 and 32 are driven 180.degree. out-of-phase. The scope of this invention is therefore defined by the appended claims rather than the aforementioned detailed description of preferred embodiments thereof.