This invention relates generally to folded-cascode amplifiers and in particular to plural-stage amplifiers in which the coupling between the input stage and a subsequent cascode-connected stage employs a current mirror amplifier (CMA).
Background of the Invention
Cascode amplifiers conventionally comprise two transistors of like conductivity type having their main conduction paths serially connected. Where, for example, field-effect transistors are utilized, the first transistor operates as a common-source amplifier having its drain connected to the source of the second transistor which operates as a common-gate amplifier. Signals are applied to the gate of the first transistor while a reference potential is applied to the gate of the second transistor. Output signals are available at the drain of the second transistor. Such circuits are characterized by a voltage translation between their input and output terminals and by equality of the currents flowing in the several transistors. That is generally true whether the amplifier employs bipolar or field-effect transistors, or is configured in single-ended or differential configuration.
Voltage translation between input and output may be overcome by using a folded-cascode amplifier configuration. A first transistor operates effectively as a common-source amplifier having signals coupled to its gate. A second transistor of complementary conductivity type to the first transistor operates as a common-gate amplifier having a reference potential applied at its gate and having its source direct connected to the drain of the first transistor for receiving signal current therefrom. Quiescent operating current is supplied to the drain electrode of the first transistor and to the source electrode of the second transistor at their interconnection by, for example, a constant current generator. In such amplifiers, the respective main conduction paths of the two transistors are effectively in series for conducting signal currents, but are effectively in parallel for conducting quiescent current. Transistors P.sub.2 and N.sub.7 of FIG. 1, for example, are in folded-cascode configuration.
A further problem with known cascode amplifiers, whether of the conventional or folded variety, is the limitation of gain resulting from an inherent lack of current gain. Because the main conduction paths of the transistors are effectively in series for conducting signal current, the output current available from the second transistor is substantially equal to the signal current generated by the first transistor.
Cascode amplifiers are further voltage-gain limited by the resistance of the load connected to the output of the cascode stage. The latter problem is particularly acute in the case of field-effect transistor amplifiers wherein the output resistance of the FET is of low value as compared to the gate input resistance of subsequent FET circuitry.
In plural-stage amplifiers, such as a long-tailed pair amplifier stage having a conventional cascode amplifier stage in cascade connection therewith, as is useful in operational amplifiers, each stage ordinarily introduces a pole into the gain response as a function of frequency. These multiple poles cause the gain roll-off of the amplifier to exceed 6 db per octave so that the amplifier will not be suitable for use with large amounts of degenerative feedback (such as in a non-inverting unity follower configuration) without external, frequency-response shaping networks.
Summary of the Invention
In a folded-cascode amplifier arrangement according to the present invention, including at least first and cascode transistors of complementary conductivity type to each other, signal currents flowing in the main conduction path of the first transistor responsive to an input signal are coupled to the circuit of the cascode transistor by current-mirror amplifying means so that the available output signal current is substantially greater than the signal current flowing in the first transistor. In another embodiment of the invention, the main-conduction path of the first transistor couples to a third transistor, which first and third transistors are connected in long-tailed-pair configuration.
In the Drawings
FIG. 1 is a schematic diagram of an amplifier circuit embodying the present invention, and
FIGS. 2 and 3 are circuit diagrams of differential-input amplifiers also embodying the invention.
Description of the Preferred Embodiments
In the amplifier arrangement of FIG. 1, a folded-cascode configuration is formed by complementary transistors P.sub.2 and N.sub.7. P-channel field-effect transistor P.sub.2, connected in common-source configuration, receives input signals from terminal 4 at its gate. N-channel field-effect transistor N.sub.7, connected in common-gate configuration, has its gate connected to a point of reference potential 52 and receives signals at its source from the drain of P.sub.2. Constant current generator 30 supplies quiescent drain current for P.sub.2 and quiescent source current for N.sub.7 from relatively negative voltage supply terminal 8.
The source of transistor P.sub.2 couples to current mirror amplifier 20, including FETs P.sub.3 and P.sub.4, wherein diode-connected transistor P.sub.3 is an input circuit for converting the current therethrough into a voltage which is applied between the gate and source of P.sub.4. FET P.sub.4, the output circuit of current mirror amplifier 20, supplies current to output terminal 54 responsive to the source current of P.sub.2. The sources of P.sub.3 and P.sub.4 connect in common and to an operating voltage at relatively positive supply terminal 6.
In operation, input signals applied to terminal 4 generate signal currents i.sub.s in the drain-to-source conduction path of transistor P.sub.2. Current i.sub.s couples to output terminal 54 via the common-gate amplifier action of transistor N.sub.7. The magnitude of signal current i.sub.s is less than the quiescent currents of FETs P.sub.2 and N.sub.7 so that the total current flows therein are of the normal polarity sense corresponding to their normal forward current conduction conditions. Signal current in FET P.sub.2 also couples to the input of current mirror amplifier 20 and thence proportionately as signal current A.sub.20 i.sub.s via P.sub.4 to output terminal 54. Signal currents supplied to output terminal 54 by transistors P.sub.4 and N.sub.7 are poled to reinforce each other so that the output current available at terminal 54 is substantially greater than the signal current in transistor P.sub.2. If the current gain of CMA 20 (i.e. the ratio of P.sub.4 drain-to-source current to P.sub.3 drain-to-source current) is A.sub.20, then the current available at output terminal 54 substantially equals (1+A.sub.20) times the drain-to-source signal current i.sub.s of transistor P.sub.2.
Such folded-cascode amplifiers are particularly advantageous in that they may be designed to have no voltage translation between the input and output terminals, they exhibit a gain-frequency response having a single, dominant pole, and they exhibit increased gain as a result of the signal current reinforcement described hereinabove. As a result of these advantages, improved performance is obtained from simplified circuits whereby cost is reduced and reliability is increased.
In the differential-input amplifier arrangement of FIG. 2, P-channel FET transistors P.sub.1 and P.sub.2 of long-tailed-pair (LTP) 10 receive input signals from terminals 2 and 4, respectively and tail current from transistor P.sub.5 of constant current generator 20'.
The drains of FETs P.sub.1 and P.sub.2 connect respectively to the input and output circuits of current mirror amplifier 30 wherein diode-connected FET N.sub.3 receives input current at node 32 and output transistor N.sub.4 supplies proportional output current to node 34. The sources of FETs N.sub.3 and N.sub.4 connect in common and to relatively negative supply terminal 8. N-channel FET N.sub.7, connected in common-gate amplifier configuration, receives signal current from node 34 at its source, reference potential from node 52 at its gate, and supplies output current to terminal 54 from its drain. P.sub.2 and N.sub.7 are thereby connected in folded-cascode configuration.
Current mirror amplifier 20' receives control current at node 22 to its input circuit formed by diode-connected transistor P.sub.3. CMA 20' supplies tail current to LTP 10 from FET P.sub.5 and source current to FET P.sub.7 from FET P.sub.4 via node 24. The sources of FETs P.sub.3, P.sub.4 and P.sub.5 connect in common and to relatively positive supply terminal 6.
Transistor P.sub.7, connected in common-gate configuration, receives reference potential from node 52 at its gate and conducts current from P.sub.4 to output terminal 54. Interposing cascode transistor P.sub.7 between CMA output transistor P.sub.4 and terminal 54 causes the output resistance at 54 to be substantially increased providing a corresponding increase in the voltage gain thereat.
Bias generating network 40, including series connected transistors P.sub.6 and N.sub.6, generates a substantially constant current responsive to the potentials at nodes 22 and 32. That bias current is supplied to the input circuits of current mirror amplifiers 20' and 30. Reference potential at node 42 is generated by voltage division across the respective drain-to-source paths of FETs P.sub.6 and N.sub.6. Bias network 40, as shown in FIG. 2, includes complementary transistors of conductivity types corresponding to those of cascode-connected output transistors P.sub.7 and N.sub.7. Such bias networks are susceptible for matching and temperature tracking with output amplifier 50.
In operation, input signals applied between terminals 2 and 4 generate signal currents i.sub.s flowing in the source-drain conduction paths of transistors P.sub.1 and P.sub.2. CMA 30 couples signal current i.sub.s from P.sub.1 to node 34 as signal currents A.sub.30 i.sub.s where it reinforces the signal current i.sub.s from P.sub.2. That reinforced signal current is coupled from node 34 to output terminal 54 via cascode-connected transistor N.sub.7. If the current gain of CMA 30 is A.sub.30, then the signal current supplied to terminal 54 by transistor N.sub.7 will be substantially (1+A.sub.30) times the signal current i.sub.s in LTP 10. The output current available at terminal 54 is thereby substantially greater than the signal current flowing in FET P.sub.2 and the overall amplifier voltage gain is correspondingly increased.
Because coupling between LTP 10 and folded-cascode output amplifier 50 is effected by current steering at node 34, the principal pole in the transfer function of the overall amplifier will be contributed by P.sub.1 and P.sub.2 of LTP 10. Although the amplifier includes a plurality of stages, its voltage-gain transfer function is dominated by that single, simple pole. The voltage gain is substantially increased by the current reinforcement at node 34 due to CMA 30 and by the high drain output resistance of cascode transistor P.sub.7 substantially increasing the load resistance for transistor N.sub.7.
The usable common-mode input voltage range for the circuit of FIG. 2 extends from the potential at relatively negative supply terminal 8 to within a few volts (typically 1.5-2) of the potential at relatively positive supply terminal 6.
The voltage gain of the circuit of FIG. 1 may be similarly increased by interposing cascode connected transistor P.sub.7 between transistor P.sub.4 and output 54 as is shown for FIG. 2.
The circuit of FIG. 2 provides all the advantages of the circuit of FIG. 1 and, in addition, provides a differential input configuration operable over a wide range of common-mode input voltages and further provides increased voltage gain as a result of the increased output resistance provided by FET P.sub.7. Such amplifiers are particularly advantageous because the symmetrical configuration and complete absence of resistors permits compact, economical, and efficient constructions thereof in integrated circuit form.
In the arrangement of FIG. 3, long-tailed-pair 10, current mirror amplifier 20', bias network 40, and complementary cascode output amplifier 50 operate substantially as described for FIG. 2.
Long-tailed-pair 12, including transistors N.sub.1 and N.sub.2 of opposite conductivity type to the transistors in LTP 10, also receives input signal from terminals 2 and 4. The drain electrodes of FETs N.sub.1 and N.sub.2 connect to the input and output circuits respectively of CMA 20'. LTP 12 extends the common-mode input voltage range of the amplifier for potentials up to and including that at supply terminal 6, and provides a further increase in the available current at output 54.
CMA 30' is similar to CMA 30 except for the addition of further output transistor N.sub.5 for supplying tail current to LTP 12.
Alternative arrangements of bias network 40 may include, for example, complementary transistors N.sub.6 and P.sub.6 wherein N.sub.6 is connected proximately to relatively positive supply 6 and transistor P.sub.6 is connected proximately to relatively negative supply terminal 8. Further alternative embodiments of bias network 40 might include arrangements employing transistors of like conductivity type to each other. Such alternatives are more difficult to match with transistors N.sub.7 and P.sub.7 of amplifier 50 than is the preferred embodiment shown in FIGS. 2 and 3.
In operation, input signals supplied between terminals 2 and 4 generate corresponding signal currents i.sub.s and i.sub.s ' in long-tailed-pairs 10 and 12 respectively. Signal current i.sub.s from LTP 10 is reinforced at node 34 by current A.sub.30 i.sub.s from CMA 30' and is coupled by common-gate transistor N.sub.7 to output 54. Thus, FETs P.sub.2 and N.sub.7 operate as a folded-cascode configuration. Similarly, signal current i.sub.s ' from LTP 12 is reinforced at node 24 by current A.sub.20 i.sub.s from CMA 20' and is coupled to output 54 by common-gate transistor P.sub.7. FETs N.sub.2 and P.sub.7 also operate as a folded-cascode configuration.
Output current contributions at terminal 54 derived from FETs P.sub.7 and N.sub.7 are in such polarity relationship that further reinforcement occurs. Therefore, if the current gain factors of CMA's 20' and 30' are A.sub.20 and A.sub.30, respectively, the signal current in P.sub.7 will be substantially (1+A.sub.20) times signal current i.sub.s ' of LTP 12, the signal current in N.sub.7 will be substantially (1+A.sub.30) times signal current i.sub.s of LTP 10, and the signal current available at output terminal 54 will substantially equal (1+A.sub.20) i.sub.s '+(1+A.sub.30) i.sub.s. For example, if A.sub.20 =A.sub.30 =1 and long-tailed pairs 10 and 12 are nominally matched (i.sub.s =i.sub.s '), then the output signal current is 4 i.sub.s.
The gain of the amplifier of FIG. 3 is enhanced, in addition to enhancement from the current reinforcement described hereinabove, by the complementary common-gate amplifier actions of transistors P.sub.7 and N.sub.7. Those transistors substantially increase the output resistance at terminal 54 as compared to the output resistances of N.sub.2, P.sub.4 and P.sub.2, N.sub.4, respectively, so that the respective load resistances for P.sub.7 and N.sub.7 are correspondingly substantially increased. In fact, the increased voltage gain attributable thereto is particularly advantageous in a field-effect transistor embodiment of the invention wherein the increase of voltage gain may be several orders of magnitude. Such increased resistance at output terminal 54 is particularly effective when a high input resistance amplifier such as amplifier 60 is used as a buffer between relatively high resistance output terminal 54 and relatively lower resistance output terminal 62.
Amplifier 60 is of the type described in U.S. Pat. No. 3,946,327 entitled "Amplifier Employing Complementary Field-Effect Transistors", issued to S. T. Hsu on Mar. 23, 1976.
The amplifier of FIG. 3 provides all the advantages of the circuits of FIGS. 1 and 2, and, in addition, is operable over a wider range of common-mode input voltages, including the potentials at supply terminals 6 and 8.
While the foregoing describes several embodiments of Applicants' invention, further embodiments would be evident to one skilled in the art of design when armed with the teaching of this disclosure. For example, each of the above-described circuits may be constructed employing bipolar transistors in any of the particular functions within the amplifier, for example, in LTP 10 or CMA 20 or CM 30 and so forth.