Technique for Preventing Forward Biased Epi-Isolation Degradation

The leakage problem is prevented by adding the guard ring to the isolation region of the same conductivity type as the isolation region. The guard ring can be added at the time of the base diffusion in bipolar technology. The guard ring prevents an ohmic electric field from extending into the original isolation region where the ionic impurities are concentrated, preventing diffusion of the impurities into the epitaxial region.

The invention disclosed relates to semiconductor devices and more particularly relates to a technique for reducing epi-isolation degradation.

In prior art of integrated circuits, it is well known metallic ionic impurities can reduce the minority carrier lifetime in silicon bipolar devices. This is thought to be due to a relatively uniform distribution of the metallic contaminant in the semiconductor. A seemingly unrelated phenomenon observed in the prior art is the gettering of metallic ionic contaminants in regions of a semiconductor which are highly doped with boron. See, for example, J. E. Lawrence, Trans. AIME 242,484 (1968). Further, it has been observed; e.g. F. Barson, et al Fall Meeting of Electrochem. Society, October, 1969, Abstract 196, that ionized copper will diffuse across a silicon PN junction when a forward bias is applied. Two types of copper were identified: Interstitial in the p region and substitution copper in the n region of the device.

It has also been recognized that zinc is a conventional substitutional acceptor dopant, for forming p-n junctions in GaAs semiconductors. The zinc in the p type region will undergo conversion to an interstitial donor under certain doping conditions. This interstitial zinc has an extremely high diffusivity, causing the zinc to move under field-enhanced diffusion, across the p-n junction. This unwanted diffusion of zinc in GaAs has been observed to cause excessive leakage current in both forward and reverse biased directions, (see Longini, Solid State Electronics, 5, 127 (1962)).

Recently forward biased isolation-epitaxy junctions, (for example, the isolation-collector junction in an NPN transistor), have been observed to degrade through the diffusion of heavy metal ions, in particular copper, across the junction. This is caused principally by the high concentration of copper present in the isolation region since it is well established that this region acts as a "getter" for copper due to the high solubility of copper in degenerate silicon as well as the high density of dislocations plus lattice strain therein. The contaminant will undergo field-enhanced diffusion caused by a reduction in the built-in junction field and by the electric field in the p type and n type regions due to the ohmic field in these contiguous regions when the junction is forward biased.

FIG. 1a shows a cross-sectional view of a p type isolation region 2, typically of boron at a concentration of greater than 10.sup.19 atoms/cc, in a n type silicon epitaxial layer 4, of arsenic at a concentration of 10.sup.15 atoms/cc. A metallic contaminant such as copper is "gettered" in the isolation region 2.

FIG. 1b shows the concentration profile of FIG. 1a for boron, arsenic and the copper contaminant under equilibrium conditions. The copper concentration is approximately two orders of magnitude less than that of boron, see for example, (Hall, et al, Journal of Applied Physics, 35, 379 (1964)).

FIG. 1c shows the transient behavior for the redistribution of the metallic contaminant of FIG. 1b, for the case of a strong forward biased junction with a negligible built-in field remaining in the depletion region and no fields present in either the p or n regions. FIG. 1c illustrates the general transient behavior for ionized impurity diffusion out of the p region of the device when a strong forward bias condition is applied to the junction. At steady-state, since no internal electric field is present, a uniform impurity concentration will exist in all regions of the device.

FIG. 1d shows the transient behavior for the redistribution of the metallic contaminant of FIG. 1b, for a lower forward bias condition than that for FIG. 1c, where the built-in junction field, E.sub.J has a significant magnitude. The amount of diffusion of the contaminant across the junction is less than that in the strongly forward biased case shown in FIG. 1c, due to the compensating effect of E.sub.J. A general steady-state distribution of the contaminant as a function of several forward bias voltages is shown in FIG. 1e.

FIG. 1f illustrates a typical transient situation for a forward biased junction when the depletion region has a moderate retarding field, while the p region has an accelerating drift field. It should be noted that when steady-state conditions are attained, both regions still have concentration gradients since both drift and diffusion forces demand non-uniform concentrations. Under these conditions, more of the metallic contaminant will diffuse across the junction than that for FIG. 1d, but less than that for the strongly forward biased condition of FIG. 1c.

These and other objects, features and advantages of the invention will be more particularly appeciated with reference to the accompanying drawings.

FIG. 1a shows a cross-sectional view of a p type isolation region in an n type silicon epitaxial layer.

FIG. 1b shows the concentration profile of the structure of FIG. 1a, for boron, arsenic and a copper ionic contaminant at equilibrium.

FIG. 1c shows the transient behavior of the metallic contaminant of FIG. 1b for a strong forward biased junction.

FIG. 1d shows the transient behavior of the metallic contaminant of FIG. 1b for a lower forward biased condition where the built-in junction field E.sub.J has a significant magnitude.

FIG. 1e is a general steady-state distribution diagram of the contaminant in FIG. 1b as a function of several forward biased voltages.

FIG. 1f shows the transient behavior of the contaminant for a forward biased junction when the depletion region has a moderate retarding field and the p region has an accelerating drift field.

FIG. 2a is a cross-sectional view of the invention.

FIG. 2b is a concentration gradient for the structures shown in FIG. 2a.

Certain types of silicon integrated circuitry, e.g. bipolar gas panel driver devices, have diffused isolation regions 2 which become forward biased with respect to the conductivity type or epitaxial region 4, when sourcing current as described above for FIG. 1a. Metallic ionic impurities such as copper, gold, nickel and iron lodged in the isolation region 2 diffuse from the isolation region into the epitaxial region 4 during the forward bias condition. When the isolation region 2 is reverse biased, the impurities produce generation/recombination centers in the depletion region 6 of the device. This results in leakage current between the epitaxial region 4 and the isolation region 2.

The invention disclosed herein prevents the leakage problem by adding a guard ring 8 to the isolation region 2 having the same conductivity type as the isolation region 2, as shown in FIG. 2a. This is done by the addition of a diffusion region having a lower surface concentration than that of the isolation region 2, for example, a base diffusion in bipolar technology, overlapping the isolation 2, such that the ohmic field does not extend back into the isolation region having a higher metallic contaminant concentration. The base diffusion region 8 contains very little contaminant because of the low boron concentration. The dopant concentration profiles are depicted in FIG. 2b. Region 8 can also be ion implanted.

Typically, for an arsenic doped epitaxial silicon layer 4, having a concentration of 10.sup.15 atoms/cc and a thickness of 12 microns and a boron doped isolation region 2 having a surface concentration of 2 .times. 10.sup.20 atoms/cc and a width of 32 microns, the guard ring diffusion may be of boron at a concentration of approximately 10.sup.18 atoms/cc, which extends approximately 3 microns laterally beyond the edge of the isolation region 2. The surface concentration of the guard ring 8 is selected to be intermediate between that of the isolation region 2 and that of the epitaxial region 4. It must be high enough to prevent a substantial ohmic drop in the original isolation region 2 and also to displace the p-n junction 6, with its field E.sub.J, beyond the original isolation region 2; yet it should not be so large so as to cause the metallic contaminant to redistribute itself into the guard ring 8 during its diffusion step.

Since the ohmic field does not extend back into the high contaminant concentration region, there is a relatively small transport of contaminant across the junction, resulting in very small degradation of forward and reverse bias junction characteristics. This can be accomplished even though the base diffusion is relatively shallow, since the contaminant concentration falls off rapidly with depth measured from the top of the isolation diffusion 2. Thus, the isolation region 2, below the base guard ring diffusion 8, is a poor source of copper and no degradation results in this region.

The guard ring 8 solves a serious problem in integrated circuit driver technology. In the absence of the guard ring, expanded circuitry is required for integrated circuit drivers. The problem of the isolation junction degrading from metallic contaminant diffusion under forward bias conditions has not previousy been addressed; hence this solution has application to linear or analog functions which are integrated into LSI.

While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and the scope of the invention.