Background of the Invention
The present invention relates in general to semiconductor gas detector circuits and more particularly to such circuits employing temperature compensation for compensating the temperature coefficient of the semiconductor detector.
Description of the Prior Art
Heretofore, semiconductor gas detector circuits have been proposed which have employed means for compensating for the temperature coefficient of the semiconductor gas detector. A typical example of such a prior art gas detector circuit is found in U.S. Pat. No. 3,932,807 issued Jan. 13, 1976.
One of the problems with these prior semiconductor detector circuits is that they are relatively complicated requiring a number of electrical bridges and the like to effect temperature compensation. For example, in the aforecited patent the electrical heater for the semiconductive gas detector element is incorporated in a bridge circuit and the current supplied to the bridge circuit is automatically controlled in response to variations of the out of balance voltage of the bridge circuit so as to maintain constancy of the resistance of the heating element and hence of its operating temperature.
While these aforementioned temperature compensation schemes serve to provide some degree of temperature compensation they are relatively complicated and it is desired to provide a simplified temperature compensation network.
Summary of the Present Invention
The principal object of the present invention is the provision of an improved semiconductor gas detector circuit having simplified temperature compensation.
In one feature of the present invention, the negative temperature coefficient of resistance of the semiconductor gas detector is compensated by employing an output derived upon the positive temperature coefficient of the supply current drawn by the differential amplifier employed to amplify the output signal derived from the semiconductive detector, whereby the complexity of the temperature compensation circuitry is substantially reduced.
In another feature of the present invention, the value of a resistor series connected with the semiconductive resistive sensor to be compensated and across which the sensing input signal to a differential amplifier is derived, is chosen relative to the value of a second resistor in the input circuit to the other input of the differential amplifier, and across which the current supplied to the differential amplifier is drawn, so that the ratio of the first and second resistors are arranged to compensate for the negative temperature coefficient of resistance of the semiconductor gas detector.
Other features and advantages of the present invention will become apparent upon a perusal of the following specification taken in connection with the accompanying drawings wherein:
Brief Description of the Drawing
FIG. 1 is a schematic circuit diagram, partly in block diagram form, of a semiconductor gas detector circuit incorporating features of the present invention,
FIG. 2 is a schematic simplified circuit diagram of a portion of the structure of FIG. 1 delineated by line 2--2, and
FIG. 3 is a simplified schematic circuit diagram for a portion of the circuit of FIG. 1 delineated by line 3--3.
Description of the Preferred Embodiments
Referring now to FIG. 1 there is shown a semiconductor gas detector circuit 11 incorporating features of the present invention. The circuit 11 includes a source of voltage 12, such as a nine volt composite battery comprising six 1.5 volt C battery cells. The output of the battery 12 is applied via a first switch 13 to the input of a voltage regulator 14 such as a LM 309K regulator producing a five volt regulated output .epsilon..sub.s.
The regulated output voltage .epsilon..sub.s is applied across a first voltage divider network consisting of resistors R.sub.1, R.sub.x (the sensing resistor of a semiconductive gas detector sensor such as a Fiagaro Model No. 711 of the Taguchi type) and a second voltage divider resistor R.sub.2. In a typical example R.sub.1 has a value of 300 ohms, R.sub.2 has a value of 500 ohms and the value of R.sub.x is much, much greater than either R.sub.1 or R.sub.2.
The semiconductive gas sensor 15 includes a heating element 16 which serves to heat the sensing resistor R.sub.x of the sensor 15 to its operating temperature. The heating element 16 is connected across the output of the voltage regulator 14 for supplying operating current thereto.
As the concentration of the gas constituent of interest, and which is to be detected, varies the resistance R.sub.x varies to produce a change in an output voltage .epsilon..sub.3 derived from a sensing node 17 of the voltage divider disposed between resistor R.sub.x and R.sub.2. The sensor output voltage .epsilon..sub.3 is fed to one input terminal 18 of a differential amplifier 19 such as a LM 358. A portion of the output voltage .epsilon..sub.0 derived from the output of the differential amplifier 19 is fed back to the other input 21 of the differential amplifier 19 via the intermediary of a gain control resistor R.sub.3 as of 3.3 kilohms. The gain control feedback resistor R.sub.3 serves to control the sensitivity of the gas detector circuit.
A second voltage divider network consisting of a series connection of resistors R.sub.3, and R.sub.4 is connected between the second input terminal 21 of the differential amplifier and ground which is the negative terminal of the battery 12. In a typical example, R.sub.5 has a value of 510 ohms and R.sub.4 has a value 200 ohms. Current is supplied to the differential amplifier 19 from the output of the voltage regulator 14 via line 22. The current supplied to the differential amplifier flows through the differential amplifier and back to the battery 12 via output line 23 and resistor R.sub.4 of the second voltage divider network.
It turns out that the sensing resistor R.sub.x of the semiconductor sensor 15 has a negative temperature coefficient which makes the sensor output signal .epsilon..sub.3 temperature dependent and it is desired to compensate for this temperature dependence. It also turns out that the current supplied through the differential amplifier 19 has a positive temperature coefficient. Thus by arranging the ratio of the values of the resistance of resistor R.sub.2 to the value of the resistance of resistor R.sub.4 to the proper value, the first order temperature dependence of the output voltage .epsilon..sub.3 can be compensated. In the circuit of FIG. 1, utilizing the values of resistance indicated, a value for R.sub.4 of 200 ohms and a value of R.sub.2 of 500 ohms temperature compensates the gas detector circuit.
The output voltage .epsilon..sub.3 is fed via a switch 24 to an alarm or sounder 25 for sounding an alarm when the concentration of the gas constituent of interest exceeds a predetermined value determined by the threshold setting of the alarm 25. In addition, a recorder 26 and a meter 27 can be connected between the output voltage .epsilon..sub.0 and ground for recording and metering, respectively, the output signal .epsilon..sub.0.
Derivation of the Temperature Compensation
Referring now to FIGS. 2 and 3 there is shown, in simplified circuit diagram form, the voltage divider network portions of the circuit of FIG. 1 delineated by lines 2--2 and 3--3, respectively. ##EQU1## since R.sub.x >> R.sub.1,R.sub.2 we find: ##EQU2## since R.sub.3 >> R.sub.4, R.sub.5 we find: ##EQU3## Since the differential amplifier has very high open loop gain, .epsilon..sub.2 .congruent..epsilon..sub.3, and therefore: ##EQU4## Equation (6) determines the output sensitivity. If it is desired that output voltage be independent of temperature, and both R.sub.x and I.sub.amp depend upon temperature, we require: ##EQU5## Since ##EQU6## is positive and ##EQU7## is negative, for given values of .epsilon..sub.s and R.sub.x a proper choice of the ratio ##EQU8## can eliminate the first order temperature dependence of the output voltage. The desired output sensitivity can still be obtained by the proper selection of the value of R.sub.3.
The advantage of the semiconductor gas detecting circuit 11 of the present invention is that it greatly simplifies the temperature compensation circuitry employed in semiconductor gas detector circuits.