Background of the Invention
This invention relates to a constant current source with a current independent of the supply voltage and temperature.
Direct current sources, which have a high internal resistance compared to their ballast resistance and are as stable as possible, are required for the operation of transistor circuits. An important requirement of this direct current source consists in the fact that the current should be independent of the supply voltage in order to avoid any operating point displacement of the circuit in this way.
Summary of the Invention
It is an object of the invention to provide a circuit arrangement which produces an output which is independent of the supply direct voltage and temperature.
According to a first aspect of the invention, there is provided a constant current source comprising a direct voltage supply, a first transistor, a first emitter resistance connected between the emitter of the said first transistor and a first pole of said direct voltage supply, a load resistance connected between the collector of the first transistor and the second pole of said direct voltage supply a second transistor complementary to said first transistor, a second emitter resistance connected between the emitter of said second transistor and a said second pole of said direct voltage supply, means connecting the collector of said second transistor with the emitter of said first transistor, a third transistor through which part of the current from one of said first and second transistors is removed, a third emitter resistance connected between the emitter of said third transistor and one of said poles of said direct voltage supply with the circuit having the following characteristics:
wherein
R.sub.1 is the value of said first emitter resistance
R.sub.2 is the value of said second emitter resistance
R.sub.3 is the value of said third emitter resistance
U.sub.1 is the voltage applied to the base of said first transistor
U.sub.2 is the voltage applied to the base of said second transistor
U.sub.3 is the voltage applied to the base of said third transistor
U.sub.B is the voltage of the direct voltage supply
U.sub.R1 is the voltage drop across R.sub.1
and K.sub.1 K.sub.2, n, m, and b are constants in which:
According to a second aspect of the invention, there is provided a constant current source with an output current independent of the supply voltage and the temperature, comprising first and second complementary transistors the emitter of said first transistor being connected via an emitter resistance R.sub.1 across which, in operation, a voltage U.sub.R1 drops, to one pole of a direct voltage supply U.sub.B, and the emitter of said second transistor being connected via an emitter resistance R.sub.2 = nR.sub.1 to the other pole of said direct voltage supply U.sub.B, the collector of said first transistor being connected via the load resistance for the current to said other pole of said direct voltage supply the collector of said second transistor being connected to the emitter of said first transistor, a further transistor T.sub.3 through which a part of the current is removed from one of said first and second transistors, and whose collector is connected to one of the electrodes of said first and second transistors and whose emitter is connected via an emitter resistance R.sub.3 = mR.sub.1 to a terminal of said direct voltage supply; and wherein the following direct voltages with assigned indices:
are applied in operation to the bases of said first, second and further transistors and the circuit is so dimensioned to achieve a voltage and temperature-independent collector current I* through said load resistance of said first transistor such that the following interrelationships between the constants K.sub.1, K.sub.2, n, m, b apply:
Brief Description of the Drawing
FIG. 1 is a circuit diagram of a constant current source in accordance with the invention.
FIG. 2 is a circuit diagram showing a modification of the embodiment of FIG. 1.
FIG. 3 is a circuit diagram showing another modification of the embodiment of FIG. 1.
Description of the Preferred Embodiment
Basically, the invention proposes that the circuit has two complementary transistors T.sub.1, T.sub.2, wherein the emitter of the first transistor T.sub.1 is connected via an emitter resistance R.sub.1, across which the voltage U.sub.R1 drops in operation, to one pole of the direct supply voltage U.sub.B and the emitter of the second transistor T.sub.2 is connected via an emitter resistance R.sub.2 = n.sup.. R.sub.1 to the other pole of the direct voltage supply U.sub.B, that the collector of the second transistor T.sub.2 is connected to the emitter of the first transistor T.sub.1, that a further transistor T.sub.3 is provided by which a part of the current is removed from one of the two other transistors, T.sub.1 and T.sub.2 wherein this third transistor T.sub.3 is connected via an emitter resistance R.sub.3 = mR.sub.1 to a pole of the direct voltage supply U.sub.B, that there are applied to the three base electrodes of the transistors present, in operation, the following direct voltage with assigned indices:
and that to achieve a voltage and temperature independent collector current I* of the transistor T.sub.1, the circuit is so dimensioned that the following relationships between the constants K.sub.1, K.sub.2, n, m, b apply:
The collector of the additional transistor T.sub.3 can be connected to different places of the two other transistors T.sub.1, T.sub.2. Preferably the collector of the transistor T.sub.3 is connected either to the collector electrode or to an emitter electrode (FIG. 1) of transistor T.sub.2. However, the collector of transistor T.sub.3 can even be connected to the collector electrode of transistor T.sub.1 (FIG. 3). The transistors T.sub.1 and T.sub.3 have the same sequence of regions i.e., they are the same polarity type (npn in the illustrated circuit).
The circuit has the two complementary transistors T.sub.1 and T.sub.2, both of which are driven in the emitter circuit. The transistor T.sub.1 is, for example, a npn transistor; then the transistor T.sub.2 is a pnp transistor. The collector of the transistor T.sub.2 is connected to the emitter electrode of the transistor T.sub.1. Both electrodes are connected via the common resistance R.sub.1 to the negative terminal of the direct voltage supply U.sub.B. The emitter electrode of the transistor T.sub.2 is connected via the resistance R.sub.2 = n.sup.. R.sub.1 to the positive terminal of the supply voltage source. The collector connection of the transistor T.sub.1 is connected to the same terminal of the supply voltage source via the ballast or load resistance R.sub.L. The constant current I* should flow through the ballast resistance R.sub.L and produce a voltage across it corresponding to the current I* and is thus likewise predetermined. The voltage U.sub.1 = K.sub.1.sup.. U.sub.B lies between the base electrode of the transistor T.sub.1 and the negative pole of the supply voltage source. The factor K.sub.1 thus determines the voltage part of the supply voltage U.sub.B applied to the base electrode of T.sub.1. The voltage U.sub.1 is obtained, for example, with the help of a base voltage divider comprising resistances R.sub.4 and R.sub.5.
In a corresponding manner the voltage U.sub.2 = U.sub.B - K.sub.2.sup.. U.sub.B lies between the base electrode (FIG. 2) of the transistor T.sub.2 and the negative terminal of the supply voltage source. The factor K.sub.2 thus determines the part of the supply voltage applied between the base electrode of T.sub.2 and the positive terminal of the supply voltage. This voltage U.sub.2 can also be realized, for example, with the help of a base voltage divider comprising resistances R.sub.6 and R.sub.7.
The npn transistor T.sub.3 is connected via the emitter resistance R.sub.3 = mR.sub.1 to the negative terminal of the supply voltage, while the collector of T.sub.3 is connected, for example, as shown in FIG. 1 to the emitter of transistor T.sub.2. At the base electrode of transistor T.sub.3 is applied the voltage U.sub.3 = bU.sub.R1, when U.sub.R1 is the voltage across the resistance R.sub.1. A current, current I.sub.3, by which temperature conditioned variations of the current I.sub.2 are compensated for, is taken off through the transistor T.sub.3 from the transistor T.sub.2, which supplies at the emitter path of the transistor T.sub.1 a current of the value I.sub.2.
In the case of the circuit described, for the constant current I* flowing through the ballast resistance R.sub.L the following applies: ##EQU1##
From the condition that the current I* should be independent of the supply direct voltage, there results the specification:
from the further condition that the current I* should also be temperature independent, the following specifications result:
If the specifications are maintained in the dimensioning of the circuit, a constant current I* through the ballast resistance R.sub.L is obtained over and above temperature and the direct voltage of the supply.
For example it is specified that the current should be I* = 1mA large. If the values for k.sub.1 = 1/2, b = 1, and R.sub.1 = 1kOhm are assumed, there results from the above-listed equations:
the resistance R.sub.3 must thus be the same size as R.sub.1, whereas the resistance R.sub.2 is only half as large as R.sub.1. At the base of T.sub.1 is applied half the supply voltage, at the base of T.sub.2 is applied 75% of the supply voltage. The voltage U.sub.3 = bU.sub.R1 = b.sup.. I*.sup.. R.sub.1 = 1.times.1mA.times.1kOhm = 1 volt is applied to the base of T.sub.3. The supply voltage U.sub.B amounts, for example, to 10 volts. In tests it has been shown that the current I* remains absolutely constant even over a temperature range of 150.degree.C.